JP6021922B2 - 半導体特性を有する化合物、ならびに関連する組成物およびデバイス - Google Patents
半導体特性を有する化合物、ならびに関連する組成物およびデバイス Download PDFInfo
- Publication number
- JP6021922B2 JP6021922B2 JP2014529956A JP2014529956A JP6021922B2 JP 6021922 B2 JP6021922 B2 JP 6021922B2 JP 2014529956 A JP2014529956 A JP 2014529956A JP 2014529956 A JP2014529956 A JP 2014529956A JP 6021922 B2 JP6021922 B2 JP 6021922B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric material
- compound
- mmol
- field effect
- transistor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
- C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
- C07D493/04—Ortho-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
- C07D495/04—Ortho-condensed systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161533785P | 2011-09-12 | 2011-09-12 | |
| US61/533,785 | 2011-09-12 | ||
| PCT/US2012/054502 WO2013039842A1 (en) | 2011-09-12 | 2012-09-10 | Compounds having semiconducting properties and related compositions and devices |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014531435A JP2014531435A (ja) | 2014-11-27 |
| JP2014531435A5 JP2014531435A5 (OSRAM) | 2015-10-08 |
| JP6021922B2 true JP6021922B2 (ja) | 2016-11-09 |
Family
ID=47116279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014529956A Expired - Fee Related JP6021922B2 (ja) | 2011-09-12 | 2012-09-10 | 半導体特性を有する化合物、ならびに関連する組成物およびデバイス |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20130062598A1 (OSRAM) |
| EP (1) | EP2755978A1 (OSRAM) |
| JP (1) | JP6021922B2 (OSRAM) |
| KR (1) | KR20140090979A (OSRAM) |
| CN (1) | CN103958520B (OSRAM) |
| WO (1) | WO2013039842A1 (OSRAM) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6093027B2 (ja) | 2012-12-03 | 2017-03-08 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 有機電子素子用のヘテロアセン化合物 |
| JP6080870B2 (ja) * | 2013-01-22 | 2017-02-15 | 日本化薬株式会社 | 溶液プロセス用有機半導体材料及び有機半導体デバイス |
| CN105659310B (zh) | 2013-08-13 | 2021-02-26 | 飞利斯有限公司 | 电子显示区域的优化 |
| TWI655807B (zh) | 2013-08-27 | 2019-04-01 | 飛利斯有限公司 | 具有可撓曲電子構件之可附接裝置 |
| WO2015031426A1 (en) | 2013-08-27 | 2015-03-05 | Polyera Corporation | Flexible display and detection of flex state |
| WO2015038684A1 (en) | 2013-09-10 | 2015-03-19 | Polyera Corporation | Attachable article with signaling, split display and messaging features |
| WO2015100224A1 (en) | 2013-12-24 | 2015-07-02 | Polyera Corporation | Flexible electronic display with user interface based on sensed movements |
| KR20160103083A (ko) | 2013-12-24 | 2016-08-31 | 폴리에라 코퍼레이션 | 탈부착형 2차원 플렉서블 전자 기기용 지지 구조물 |
| JP2017508493A (ja) | 2013-12-24 | 2017-03-30 | ポリエラ コーポレイション | 可撓性電子構成要素のための支持構造 |
| JP2017504204A (ja) | 2013-12-24 | 2017-02-02 | ポリエラ コーポレイション | 可撓性電子構成要素のための支持構造 |
| KR20160118340A (ko) | 2014-02-07 | 2016-10-11 | 올싸거널 인코포레이티드 | 교차-결합 가능한 플루오르화된 포토폴리머 |
| US20150227245A1 (en) | 2014-02-10 | 2015-08-13 | Polyera Corporation | Attachable Device with Flexible Electronic Display Orientation Detection |
| JP6247560B2 (ja) * | 2014-02-20 | 2017-12-13 | 富士フイルム株式会社 | 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料 |
| US10261634B2 (en) | 2014-03-27 | 2019-04-16 | Flexterra, Inc. | Infrared touch system for flexible displays |
| TWI692272B (zh) | 2014-05-28 | 2020-04-21 | 美商飛利斯有限公司 | 在多數表面上具有可撓性電子組件之裝置 |
| WO2015183567A1 (en) | 2014-05-28 | 2015-12-03 | Polyera Corporation | Low power display updates |
| JP2016001659A (ja) * | 2014-06-11 | 2016-01-07 | 株式会社東海理化電機製作所 | 有機半導体材料 |
| EP3171420A4 (en) * | 2014-07-18 | 2017-07-05 | Fujifilm Corporation | Organic semiconductor film formation composition, organic semiconductor element, and production method therefor |
| EP2978035A1 (en) * | 2014-07-24 | 2016-01-27 | E.T.C. S.r.l. | Organic electroluminescent transistor |
| WO2016014980A1 (en) | 2014-07-24 | 2016-01-28 | E.T.C.S.R.L. | Organic electroluminescent transistor |
| EP2978037A1 (en) * | 2014-07-24 | 2016-01-27 | E.T.C. S.r.l. | Organic electroluminescent transistor |
| WO2016138356A1 (en) | 2015-02-26 | 2016-09-01 | Polyera Corporation | Attachable device having a flexible electronic component |
| US20180062087A1 (en) * | 2015-03-23 | 2018-03-01 | Nippon Kayaku Kabushiki Kaisha | Organic Compound, Organic Semiconductor Material, Organic Thin Film And Method For Producing The Same, Organic Semiconductor Composition, And Organic Semiconductor Device |
| US10254795B2 (en) | 2015-05-06 | 2019-04-09 | Flexterra, Inc. | Attachable, flexible display device with flexible tail |
| US11198698B2 (en) | 2016-02-29 | 2021-12-14 | National Institute Of Advanced Industrial Science And Technology | Organic semiconductor composition, organic thin film comprising same, and use thereof |
| JP6526585B2 (ja) * | 2016-02-29 | 2019-06-05 | 日本化薬株式会社 | 縮合多環芳香族化合物及びその用途 |
| JP6833445B2 (ja) * | 2016-10-18 | 2021-02-24 | 山本化成株式会社 | 有機トランジスタ |
| KR102553881B1 (ko) * | 2018-06-01 | 2023-07-07 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 이를 포함하는 박막 트랜지스터 표시판 및 전자 장치 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1792893A4 (en) * | 2004-08-31 | 2007-11-21 | Idemitsu Kosan Co | AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT DEVICE USING THIS |
| WO2006086082A2 (en) | 2004-12-23 | 2006-08-17 | Northwestern University | Siloxane-polymer dielectric compositions and related organic field-effect transistors |
| EP1847544B1 (en) * | 2005-01-19 | 2011-10-19 | National University of Corporation Hiroshima University | Novel condensed polycyclic aromatic compound and use thereof |
| WO2007075748A2 (en) | 2005-12-20 | 2007-07-05 | Northwestern University | Intercalated superlattice compositions and related methods for modulating dielectric property |
| JP4581062B2 (ja) * | 2006-10-20 | 2010-11-17 | 日本化薬株式会社 | 電界効果トランジスタ、半導体デバイス作製用インク、電界効果トランジスタの製造方法、および有機複素環化合物 |
| KR101177970B1 (ko) * | 2006-10-25 | 2012-08-28 | 니폰 카야쿠 가부시키가이샤 | 신규한 축합다환방향족 화합물 및 그의 제조 방법과 그의 용도 |
| KR20080100982A (ko) | 2007-05-15 | 2008-11-21 | 삼성전자주식회사 | 헤테로아센 화합물, 이를 포함하는 유기 박막 및 상기박막을 포함하는 전자 소자 |
| JP5101939B2 (ja) * | 2007-07-12 | 2012-12-19 | 山本化成株式会社 | 有機トランジスタ |
| JP5481850B2 (ja) * | 2008-01-23 | 2014-04-23 | 東ソー株式会社 | ヘテロアセン誘導体、その前駆化合物及びそれらの製造方法 |
| JP5487655B2 (ja) * | 2008-04-17 | 2014-05-07 | 株式会社リコー | [1]ベンゾチエノ[3,2‐b][1]ベンゾチオフェン化合物およびその製造方法、それを用いた有機電子デバイス |
| JP5428104B2 (ja) * | 2008-05-23 | 2014-02-26 | 日本化薬株式会社 | 有機半導体組成物 |
| JP2009302328A (ja) * | 2008-06-13 | 2009-12-24 | Nippon Kayaku Co Ltd | 有機トランジスタ、およびこれが用いられた有機半導体素子 |
| KR20110058787A (ko) * | 2008-08-29 | 2011-06-01 | 이데미쓰 고산 가부시키가이샤 | 유기 박막 트랜지스터용 화합물 및 그것을 사용한 유기 박막 트랜지스터 |
| EP2402348B1 (en) * | 2009-02-27 | 2017-04-12 | Nippon Kayaku Kabushiki Kaisha | Field effect transistor |
| WO2011004869A1 (ja) * | 2009-07-10 | 2011-01-13 | 住友化学株式会社 | 置換ベンゾカルコゲノアセン化合物、該化合物を含有する薄膜及び該薄膜を含有する有機半導体デバイス |
| JP5655301B2 (ja) * | 2009-12-22 | 2015-01-21 | 東ソー株式会社 | 有機半導体材料 |
| US8643001B2 (en) | 2010-12-23 | 2014-02-04 | Samsung Electronics Co. Ltd. | Semiconductor composition |
-
2012
- 2012-09-10 EP EP12780903.6A patent/EP2755978A1/en not_active Withdrawn
- 2012-09-10 CN CN201280052522.5A patent/CN103958520B/zh active Active
- 2012-09-10 KR KR1020147009221A patent/KR20140090979A/ko not_active Withdrawn
- 2012-09-10 US US13/608,976 patent/US20130062598A1/en not_active Abandoned
- 2012-09-10 JP JP2014529956A patent/JP6021922B2/ja not_active Expired - Fee Related
- 2012-09-10 WO PCT/US2012/054502 patent/WO2013039842A1/en not_active Ceased
-
2016
- 2016-04-25 US US15/137,939 patent/US9911927B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2755978A1 (en) | 2014-07-23 |
| CN103958520A (zh) | 2014-07-30 |
| US20130062598A1 (en) | 2013-03-14 |
| WO2013039842A1 (en) | 2013-03-21 |
| US20160351832A1 (en) | 2016-12-01 |
| CN103958520B (zh) | 2017-03-22 |
| US9911927B2 (en) | 2018-03-06 |
| KR20140090979A (ko) | 2014-07-18 |
| JP2014531435A (ja) | 2014-11-27 |
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