KR20140082638A - 화학 기상 증착 공정을 통한 재료의 제조를 위한 카트리지 반응기 - Google Patents

화학 기상 증착 공정을 통한 재료의 제조를 위한 카트리지 반응기 Download PDF

Info

Publication number
KR20140082638A
KR20140082638A KR1020147002798A KR20147002798A KR20140082638A KR 20140082638 A KR20140082638 A KR 20140082638A KR 1020147002798 A KR1020147002798 A KR 1020147002798A KR 20147002798 A KR20147002798 A KR 20147002798A KR 20140082638 A KR20140082638 A KR 20140082638A
Authority
KR
South Korea
Prior art keywords
container
reactor
deposition
deposition surface
heated
Prior art date
Application number
KR1020147002798A
Other languages
English (en)
Korean (ko)
Inventor
케이갠 세란
Original Assignee
그린리 그룹 포 솔라 테크놀로지스 엘티디
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 그린리 그룹 포 솔라 테크놀로지스 엘티디 filed Critical 그린리 그룹 포 솔라 테크놀로지스 엘티디
Publication of KR20140082638A publication Critical patent/KR20140082638A/ko

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020147002798A 2011-07-01 2012-07-01 화학 기상 증착 공정을 통한 재료의 제조를 위한 카트리지 반응기 KR20140082638A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161504148P 2011-07-01 2011-07-01
US201161504145P 2011-07-01 2011-07-01
US61/504,145 2011-07-01
US61/504,148 2011-07-01
PCT/US2012/045177 WO2013006523A1 (en) 2011-07-01 2012-07-01 Cartridge reactor for production of materials via the chemical vapor deposition process

Publications (1)

Publication Number Publication Date
KR20140082638A true KR20140082638A (ko) 2014-07-02

Family

ID=47437386

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020147002798A KR20140082638A (ko) 2011-07-01 2012-07-01 화학 기상 증착 공정을 통한 재료의 제조를 위한 카트리지 반응기
KR1020147002797A KR20140082637A (ko) 2011-07-01 2012-07-01 화학 기상 증착 공정을 통한 재료의 제조를 위한 증착 카트리지

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020147002797A KR20140082637A (ko) 2011-07-01 2012-07-01 화학 기상 증착 공정을 통한 재료의 제조를 위한 증착 카트리지

Country Status (8)

Country Link
EP (2) EP2726645A1 (zh)
JP (2) JP2014522799A (zh)
KR (2) KR20140082638A (zh)
CN (2) CN103958732A (zh)
IN (1) IN2014MN00197A (zh)
RU (2) RU2014103710A (zh)
TW (2) TW201305376A (zh)
WO (2) WO2013006522A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2534192B (en) * 2015-01-16 2019-10-23 Oxford Instruments Nanotechnology Tools Ltd Surface Processing Apparatus and Method
JP2018123033A (ja) * 2017-02-02 2018-08-09 信越化学工業株式会社 多結晶シリコン棒の製造方法および多結晶シリコン棒
JP6969917B2 (ja) 2017-07-12 2021-11-24 信越化学工業株式会社 多結晶シリコン棒および多結晶シリコン棒の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4710260A (en) * 1982-12-22 1987-12-01 Texas Instruments Incorporated Deposition of silicon at temperatures above its melting point
US5320680A (en) * 1991-04-25 1994-06-14 Silicon Valley Group, Inc. Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow
CN101218175A (zh) * 2005-04-10 2008-07-09 瑞科硅公司 多晶硅的制备
CN101707871B (zh) * 2007-04-25 2013-06-12 卡甘·塞兰 通过大表面积气-固或气-液界面及液相再生沉积高纯硅
JP5428303B2 (ja) * 2007-11-28 2014-02-26 三菱マテリアル株式会社 多結晶シリコン製造方法
US8399072B2 (en) * 2009-04-24 2013-03-19 Savi Research, Inc. Process for improved chemcial vapor deposition of polysilicon
KR101115697B1 (ko) * 2009-12-02 2012-03-06 웅진폴리실리콘주식회사 에너지 효율을 높여주는 복사열 차단막을 갖는 화학기상증착 반응기

Also Published As

Publication number Publication date
EP2726646A1 (en) 2014-05-07
EP2726645A1 (en) 2014-05-07
JP2014522799A (ja) 2014-09-08
IN2014MN00197A (zh) 2015-08-21
TW201305400A (zh) 2013-02-01
WO2013006522A1 (en) 2013-01-10
TW201305376A (zh) 2013-02-01
TWI472654B (zh) 2015-02-11
RU2014103707A (ru) 2015-08-10
KR20140082637A (ko) 2014-07-02
JP2014523488A (ja) 2014-09-11
WO2013006522A9 (en) 2013-02-14
CN103998648A (zh) 2014-08-20
CN103958732A (zh) 2014-07-30
WO2013006523A1 (en) 2013-01-10
RU2014103710A (ru) 2015-08-10

Similar Documents

Publication Publication Date Title
EP1257684B1 (en) Method and apparatus for chemical vapor deposition of polysilicon
TWI412640B (zh) 製備多晶矽太陽能電池之矽鑄塊之高產量裝置
US6365225B1 (en) Cold wall reactor and method for chemical vapor deposition of bulk polysilicon
CN105603520B (zh) 一种高速单晶生长装置及方法
JP5530351B2 (ja) 表面積が広いガス−固体またはガス−液体の界面を用いた高純度シリコンの析出、および液体相からの回収
US4265859A (en) Apparatus for producing semiconductor grade silicon and replenishing the melt of a crystal growth system
TWI386526B (zh) 高純度多結晶矽的製造方法及製造裝置
KR101540225B1 (ko) 단결정 제조장치 및 단결정의 제조방법
CN200971318Y (zh) 一种硅材料微波加热提纯装置
KR20140082638A (ko) 화학 기상 증착 공정을 통한 재료의 제조를 위한 카트리지 반응기
KR101328521B1 (ko) 고체 상품을 제조하는 방법 및 장치
EP2554720B1 (en) Method for synthesizing group ii-vi compound semiconductor polycrystals
CN202595325U (zh) 一种用于晶体硅铸锭炉的气体导流装置
CN107601515A (zh) 一种制备SiO粉末的装置
US20140131911A1 (en) Cartridge Reactor for Production of Materials via the Chemical Vapor Deposition Process
CN113174630B (zh) 一种大尺寸半导体单晶生长系统
CN113249778B (zh) 一种大尺寸化合物半导体单晶制备方法
CN102492980A (zh) 一种多晶硅沉积用的硅芯的制备方法及装置
CN114540949A (zh) 锗单晶制备装置以及锗单晶制备方法
CN201148465Y (zh) 双温场化学气相沉积装置
CN207361799U (zh) 一种制备SiO粉末的装置
KR20100085299A (ko) 폴리실리콘 정제로
JP4475524B2 (ja) 粒状シリコンの製造方法及び製造装置
KR101987637B1 (ko) 저융점 금속의 고순도화 장치
CN202482490U (zh) 多晶铸锭炉二次加料的装置

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination