IN2014MN00197A - - Google Patents

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Publication number
IN2014MN00197A
IN2014MN00197A IN197MUN2014A IN2014MN00197A IN 2014MN00197 A IN2014MN00197 A IN 2014MN00197A IN 197MUN2014 A IN197MUN2014 A IN 197MUN2014A IN 2014MN00197 A IN2014MN00197 A IN 2014MN00197A
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Kagan Ceran
Original Assignee
Greenly Group For Solar Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Greenly Group For Solar Technologies Ltd filed Critical Greenly Group For Solar Technologies Ltd
Publication of IN2014MN00197A publication Critical patent/IN2014MN00197A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IN197MUN2014 2011-07-01 2014-01-30 IN2014MN00197A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161504148P 2011-07-01 2011-07-01
US201161504145P 2011-07-01 2011-07-01
PCT/US2012/045176 WO2013006522A1 (en) 2011-07-01 2012-07-01 Deposition cartridge for production materials via the chemical vapor deposition process

Publications (1)

Publication Number Publication Date
IN2014MN00197A true IN2014MN00197A (zh) 2015-08-21

Family

ID=47437386

Family Applications (1)

Application Number Title Priority Date Filing Date
IN197MUN2014 IN2014MN00197A (zh) 2011-07-01 2014-01-30

Country Status (8)

Country Link
EP (2) EP2726645A1 (zh)
JP (2) JP2014522799A (zh)
KR (2) KR20140082638A (zh)
CN (2) CN103958732A (zh)
IN (1) IN2014MN00197A (zh)
RU (2) RU2014103710A (zh)
TW (2) TW201305376A (zh)
WO (2) WO2013006522A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2534192B (en) * 2015-01-16 2019-10-23 Oxford Instruments Nanotechnology Tools Ltd Surface Processing Apparatus and Method
JP2018123033A (ja) * 2017-02-02 2018-08-09 信越化学工業株式会社 多結晶シリコン棒の製造方法および多結晶シリコン棒
JP6969917B2 (ja) 2017-07-12 2021-11-24 信越化学工業株式会社 多結晶シリコン棒および多結晶シリコン棒の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4710260A (en) * 1982-12-22 1987-12-01 Texas Instruments Incorporated Deposition of silicon at temperatures above its melting point
US5320680A (en) * 1991-04-25 1994-06-14 Silicon Valley Group, Inc. Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow
CN101218175A (zh) * 2005-04-10 2008-07-09 瑞科硅公司 多晶硅的制备
CN101707871B (zh) * 2007-04-25 2013-06-12 卡甘·塞兰 通过大表面积气-固或气-液界面及液相再生沉积高纯硅
JP5428303B2 (ja) * 2007-11-28 2014-02-26 三菱マテリアル株式会社 多結晶シリコン製造方法
US8399072B2 (en) * 2009-04-24 2013-03-19 Savi Research, Inc. Process for improved chemcial vapor deposition of polysilicon
KR101115697B1 (ko) * 2009-12-02 2012-03-06 웅진폴리실리콘주식회사 에너지 효율을 높여주는 복사열 차단막을 갖는 화학기상증착 반응기

Also Published As

Publication number Publication date
EP2726646A1 (en) 2014-05-07
EP2726645A1 (en) 2014-05-07
JP2014522799A (ja) 2014-09-08
KR20140082638A (ko) 2014-07-02
TW201305400A (zh) 2013-02-01
WO2013006522A1 (en) 2013-01-10
TW201305376A (zh) 2013-02-01
TWI472654B (zh) 2015-02-11
RU2014103707A (ru) 2015-08-10
KR20140082637A (ko) 2014-07-02
JP2014523488A (ja) 2014-09-11
WO2013006522A9 (en) 2013-02-14
CN103998648A (zh) 2014-08-20
CN103958732A (zh) 2014-07-30
WO2013006523A1 (en) 2013-01-10
RU2014103710A (ru) 2015-08-10

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