KR20140071491A - 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 반도체 장치 - Google Patents

박막 트랜지스터, 박막 트랜지스터의 제조방법 및 반도체 장치 Download PDF

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Publication number
KR20140071491A
KR20140071491A KR1020147012459A KR20147012459A KR20140071491A KR 20140071491 A KR20140071491 A KR 20140071491A KR 1020147012459 A KR1020147012459 A KR 1020147012459A KR 20147012459 A KR20147012459 A KR 20147012459A KR 20140071491 A KR20140071491 A KR 20140071491A
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South Korea
Prior art keywords
film transistor
thin film
semiconductor layer
oxide
present
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KR1020147012459A
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English (en)
Korean (ko)
Inventor
카쥬히토 츄카고시
피터 달마완
쉰야 아이카와
토시히데 나바타메
케이치 야나기사와
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도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코
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Publication of KR20140071491A publication Critical patent/KR20140071491A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
KR1020147012459A 2012-06-14 2013-06-13 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 반도체 장치 KR20140071491A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012134940 2012-06-14
JPJP-P-2012-134940 2012-06-14
PCT/JP2013/066384 WO2013187486A1 (ja) 2012-06-14 2013-06-13 薄膜トランジスタ、薄膜トランジスタの製造方法および半導体装置

Publications (1)

Publication Number Publication Date
KR20140071491A true KR20140071491A (ko) 2014-06-11

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ID=49758304

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147012459A KR20140071491A (ko) 2012-06-14 2013-06-13 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 반도체 장치

Country Status (3)

Country Link
JP (1) JP5846563B2 (ja)
KR (1) KR20140071491A (ja)
WO (1) WO2013187486A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6547273B2 (ja) * 2013-12-26 2019-07-24 株式会社リコー ｐ型酸化物半導体、ｐ型酸化物半導体製造用組成物、ｐ型酸化物半導体の製造方法、半導体素子、表示素子、画像表示装置、及びシステム

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4660667B2 (ja) * 2004-03-09 2011-03-30 出光興産株式会社 Ｔｆｔ基板及びスパッタリングターゲット及び液晶表示装置及び画素電極及び透明電極及びｔｆｔ基板の製造方法
JP4662075B2 (ja) * 2007-02-02 2011-03-30 株式会社ブリヂストン 薄膜トランジスタ及びその製造方法
US8129718B2 (en) * 2008-08-28 2012-03-06 Canon Kabushiki Kaisha Amorphous oxide semiconductor and thin film transistor using the same
JP2011254003A (ja) * 2010-06-03 2011-12-15 Fujitsu Ltd 半導体装置及びその製造方法
JP2012068597A (ja) * 2010-09-27 2012-04-05 Toshiba Corp アクティブマトリクス型有機ｅｌ表示装置およびその駆動方法
JP2012074622A (ja) * 2010-09-29 2012-04-12 Bridgestone Corp アモルファス酸化物半導体の成膜方法および薄膜トランジスタ

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JPWO2013187486A1 (ja) 2016-02-08
WO2013187486A1 (ja) 2013-12-19
JP5846563B2 (ja) 2016-01-20

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