KR20140023927A - 정전기 클램프 장치 및 리소그래피 장치 - Google Patents

정전기 클램프 장치 및 리소그래피 장치 Download PDF

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Publication number
KR20140023927A
KR20140023927A KR1020137026780A KR20137026780A KR20140023927A KR 20140023927 A KR20140023927 A KR 20140023927A KR 1020137026780 A KR1020137026780 A KR 1020137026780A KR 20137026780 A KR20137026780 A KR 20137026780A KR 20140023927 A KR20140023927 A KR 20140023927A
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KR
South Korea
Prior art keywords
array
patterning device
capacitive sensors
electrostatic clamp
reticle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020137026780A
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English (en)
Korean (ko)
Inventor
바딤 바니네
에릭 루프스트라
테오도루스 카데
요한네스 아케르만스
루이지 스카카바로찌
크리스티안 루이스 발렌틴
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20140023927A publication Critical patent/KR20140023927A/ko
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020137026780A 2011-03-11 2012-01-18 정전기 클램프 장치 및 리소그래피 장치 Ceased KR20140023927A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161451803P 2011-03-11 2011-03-11
US61/451,803 2011-03-11
PCT/EP2012/050727 WO2012123144A1 (en) 2011-03-11 2012-01-18 Electrostatic clamp apparatus and lithographic apparatus

Publications (1)

Publication Number Publication Date
KR20140023927A true KR20140023927A (ko) 2014-02-27

Family

ID=45507693

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137026780A Ceased KR20140023927A (ko) 2011-03-11 2012-01-18 정전기 클램프 장치 및 리소그래피 장치

Country Status (6)

Country Link
US (1) US20140002805A1 (enExample)
JP (1) JP2014507810A (enExample)
KR (1) KR20140023927A (enExample)
CN (1) CN103415811B (enExample)
TW (1) TW201237567A (enExample)
WO (1) WO2012123144A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200030648A (ko) * 2018-09-12 2020-03-23 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR20200128270A (ko) * 2019-05-02 2020-11-12 삼성전자주식회사 Euv 노광 장치 및 그를 이용한 반도체 소자의 제조 방법
KR20210052707A (ko) * 2019-10-30 2021-05-11 삼성전자주식회사 극자외선 노광 시스템
KR20220091281A (ko) * 2020-12-23 2022-06-30 한국세라믹기술원 센서 칩이 장착된 정전척 및 이를 이용한 정전용량 및 척킹력 측정 방법

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JP6359565B2 (ja) * 2013-01-22 2018-07-18 エーエスエムエル ネザーランズ ビー．ブイ． 静電クランプ
JP2014167963A (ja) * 2013-02-28 2014-09-11 Toshiba Corp 静電チャック、レチクル、および静電チャック方法
US9505140B1 (en) 2015-06-02 2016-11-29 Irobot Corporation Contact sensors for a mobile robot
US9462920B1 (en) 2015-06-25 2016-10-11 Irobot Corporation Evacuation station
CN106933059B (zh) * 2015-12-31 2018-11-13 上海微电子装备（集团）股份有限公司 一种在线监测补偿掩膜版热变形的装置和方法
WO2019197128A2 (en) * 2018-04-12 2019-10-17 Asml Netherlands B.V. Apparatus and method
WO2020094467A1 (en) * 2018-11-09 2020-05-14 Asml Holding N.V. Sensor array for real time detection of reticle position and forces
JP7712269B2 (ja) * 2019-10-29 2025-07-23 エーエスエムエル ホールディング エヌ．ブイ． リソグラフィ装置および静電クランプの設計
WO2021130015A1 (en) * 2019-12-26 2021-07-01 Asml Holding N.V. Wafer clamp hard burl production and refurbishment
CN115917437A (zh) * 2020-06-23 2023-04-04 Asml控股股份有限公司 通过将可变电压施加到氧化晶片上来检测突节顶部上的亚微米颗粒
EP4002010A1 (en) 2020-11-18 2022-05-25 ASML Netherlands B.V. Electrostatic clamp
US11610800B2 (en) * 2021-03-22 2023-03-21 Applied Materials, Inc. Capacitive method of detecting wafer chucking and de-chucking
WO2025218972A1 (en) * 2024-04-16 2025-10-23 Asml Netherlands B.V. Module for a lithographic apparatus, lithographic apparatus and method for clamping a sensor member

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JPH0890474A (ja) * 1994-09-27 1996-04-09 Fujitsu Ltd 静電チャックとそれを用いた異物検出方法
JP2005150527A (ja) * 2003-11-18 2005-06-09 Canon Inc 保持装置、それを用いた露光装置およびデバイス製造方法
JP2005322671A (ja) * 2004-05-06 2005-11-17 Renesas Technology Corp レチクルステージ
US20070103657A1 (en) * 2005-11-04 2007-05-10 Nuflare Technology, Inc. Position measuring apparatus and positional deviation measuring method

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JP4365908B2 (ja) * 1998-09-04 2009-11-18 キヤノン株式会社 面位置検出装置、露光装置およびデバイス製造方法
JP2004342850A (ja) * 2003-05-15 2004-12-02 Sony Corp 露光方法、マスク、半導体装置の製造方法および半導体装置
JP3894562B2 (ja) * 2003-10-01 2007-03-22 キヤノン株式会社 基板吸着装置、露光装置およびデバイス製造方法
JP2005191515A (ja) * 2003-12-01 2005-07-14 Nikon Corp 静電チャックおよび露光装置ならびに被吸着物の吸着方法
KR100723483B1 (ko) * 2005-02-03 2007-05-31 삼성전자주식회사 레티클 로딩장치 및 로딩방법
US7986146B2 (en) * 2006-11-29 2011-07-26 Globalfoundries Inc. Method and system for detecting existence of an undesirable particle during semiconductor fabrication
NL1036785A1 (nl) 2008-04-18 2009-10-20 Asml Netherlands Bv Rapid exchange device for lithography reticles.
NL2003266A1 (nl) * 2008-08-11 2010-02-15 Asml Holding Nv Multi nozzle proximity sensor employing common sensing and nozzle shaping.

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JPH0890474A (ja) * 1994-09-27 1996-04-09 Fujitsu Ltd 静電チャックとそれを用いた異物検出方法
JP2005150527A (ja) * 2003-11-18 2005-06-09 Canon Inc 保持装置、それを用いた露光装置およびデバイス製造方法
JP2005322671A (ja) * 2004-05-06 2005-11-17 Renesas Technology Corp レチクルステージ
US20070103657A1 (en) * 2005-11-04 2007-05-10 Nuflare Technology, Inc. Position measuring apparatus and positional deviation measuring method

Non-Patent Citations (1)

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Title
일본 공개특허공보 특개2005-150527호(2005.06.09.) 1부. *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200030648A (ko) * 2018-09-12 2020-03-23 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR20200128270A (ko) * 2019-05-02 2020-11-12 삼성전자주식회사 Euv 노광 장치 및 그를 이용한 반도체 소자의 제조 방법
KR20210052707A (ko) * 2019-10-30 2021-05-11 삼성전자주식회사 극자외선 노광 시스템
KR20220091281A (ko) * 2020-12-23 2022-06-30 한국세라믹기술원 센서 칩이 장착된 정전척 및 이를 이용한 정전용량 및 척킹력 측정 방법

Also Published As

Publication number Publication date
CN103415811B (zh) 2016-07-06
JP2014507810A (ja) 2014-03-27
TW201237567A (en) 2012-09-16
WO2012123144A1 (en) 2012-09-20
CN103415811A (zh) 2013-11-27
US20140002805A1 (en) 2014-01-02

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