TW201237567A - An electrostatic clamp apparatus and lithographic apparatus - Google Patents
An electrostatic clamp apparatus and lithographic apparatus Download PDFInfo
- Publication number
- TW201237567A TW201237567A TW101106095A TW101106095A TW201237567A TW 201237567 A TW201237567 A TW 201237567A TW 101106095 A TW101106095 A TW 101106095A TW 101106095 A TW101106095 A TW 101106095A TW 201237567 A TW201237567 A TW 201237567A
- Authority
- TW
- Taiwan
- Prior art keywords
- patterned
- array
- reticle
- sensor array
- capacitive
- Prior art date
Links
- 238000000059 patterning Methods 0.000 claims abstract description 10
- 230000005855 radiation Effects 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 42
- 238000001459 lithography Methods 0.000 claims description 20
- 238000005259 measurement Methods 0.000 claims description 19
- 239000003990 capacitor Substances 0.000 claims description 16
- 238000005286 illumination Methods 0.000 claims description 8
- 238000004422 calculation algorithm Methods 0.000 claims description 5
- 238000003491 array Methods 0.000 claims description 2
- 206010061218 Inflammation Diseases 0.000 claims 1
- 230000004054 inflammatory process Effects 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000000356 contaminant Substances 0.000 description 15
- 239000010410 layer Substances 0.000 description 15
- 239000002245 particle Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 7
- 238000009304 pastoral farming Methods 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000000446 fuel Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 210000000941 bile Anatomy 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
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- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 210000003128 head Anatomy 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
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- 230000035807 sensation Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7034—Leveling
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161451803P | 2011-03-11 | 2011-03-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201237567A true TW201237567A (en) | 2012-09-16 |
Family
ID=45507693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101106095A TW201237567A (en) | 2011-03-11 | 2012-02-23 | An electrostatic clamp apparatus and lithographic apparatus |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20140002805A1 (enExample) |
| JP (1) | JP2014507810A (enExample) |
| KR (1) | KR20140023927A (enExample) |
| CN (1) | CN103415811B (enExample) |
| TW (1) | TW201237567A (enExample) |
| WO (1) | WO2012123144A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI608303B (zh) * | 2013-01-22 | 2017-12-11 | Asml荷蘭公司 | 靜電夾具 |
| US12461452B2 (en) | 2020-11-18 | 2025-11-04 | Asml Netherlands B.V. | Electrostatic clamp |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014167963A (ja) * | 2013-02-28 | 2014-09-11 | Toshiba Corp | 静電チャック、レチクル、および静電チャック方法 |
| US9505140B1 (en) | 2015-06-02 | 2016-11-29 | Irobot Corporation | Contact sensors for a mobile robot |
| US9462920B1 (en) | 2015-06-25 | 2016-10-11 | Irobot Corporation | Evacuation station |
| CN106933059B (zh) * | 2015-12-31 | 2018-11-13 | 上海微电子装备(集团)股份有限公司 | 一种在线监测补偿掩膜版热变形的装置和方法 |
| WO2019197128A2 (en) * | 2018-04-12 | 2019-10-17 | Asml Netherlands B.V. | Apparatus and method |
| KR102233467B1 (ko) * | 2018-09-12 | 2021-03-31 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| WO2020094467A1 (en) * | 2018-11-09 | 2020-05-14 | Asml Holding N.V. | Sensor array for real time detection of reticle position and forces |
| KR102829107B1 (ko) * | 2019-05-02 | 2025-07-07 | 삼성전자주식회사 | Euv 노광 장치 및 그를 이용한 반도체 소자의 제조 방법 |
| JP7712269B2 (ja) * | 2019-10-29 | 2025-07-23 | エーエスエムエル ホールディング エヌ.ブイ. | リソグラフィ装置および静電クランプの設計 |
| KR102788879B1 (ko) * | 2019-10-30 | 2025-04-01 | 삼성전자주식회사 | 극자외선 노광 시스템 |
| WO2021130015A1 (en) * | 2019-12-26 | 2021-07-01 | Asml Holding N.V. | Wafer clamp hard burl production and refurbishment |
| CN115917437A (zh) * | 2020-06-23 | 2023-04-04 | Asml控股股份有限公司 | 通过将可变电压施加到氧化晶片上来检测突节顶部上的亚微米颗粒 |
| KR102504347B1 (ko) * | 2020-12-23 | 2023-02-28 | 한국세라믹기술원 | 센서 칩이 장착된 정전척 및 이를 이용한 정전용량 및 척킹력 측정 방법 |
| US11610800B2 (en) * | 2021-03-22 | 2023-03-21 | Applied Materials, Inc. | Capacitive method of detecting wafer chucking and de-chucking |
| WO2025218972A1 (en) * | 2024-04-16 | 2025-10-23 | Asml Netherlands B.V. | Module for a lithographic apparatus, lithographic apparatus and method for clamping a sensor member |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0890474A (ja) * | 1994-09-27 | 1996-04-09 | Fujitsu Ltd | 静電チャックとそれを用いた異物検出方法 |
| JP4365908B2 (ja) * | 1998-09-04 | 2009-11-18 | キヤノン株式会社 | 面位置検出装置、露光装置およびデバイス製造方法 |
| JP2004342850A (ja) * | 2003-05-15 | 2004-12-02 | Sony Corp | 露光方法、マスク、半導体装置の製造方法および半導体装置 |
| JP3894562B2 (ja) * | 2003-10-01 | 2007-03-22 | キヤノン株式会社 | 基板吸着装置、露光装置およびデバイス製造方法 |
| JP2005150527A (ja) * | 2003-11-18 | 2005-06-09 | Canon Inc | 保持装置、それを用いた露光装置およびデバイス製造方法 |
| JP2005191515A (ja) * | 2003-12-01 | 2005-07-14 | Nikon Corp | 静電チャックおよび露光装置ならびに被吸着物の吸着方法 |
| JP2005322671A (ja) * | 2004-05-06 | 2005-11-17 | Renesas Technology Corp | レチクルステージ |
| KR100723483B1 (ko) * | 2005-02-03 | 2007-05-31 | 삼성전자주식회사 | 레티클 로딩장치 및 로딩방법 |
| US7643130B2 (en) * | 2005-11-04 | 2010-01-05 | Nuflare Technology, Inc. | Position measuring apparatus and positional deviation measuring method |
| US7986146B2 (en) * | 2006-11-29 | 2011-07-26 | Globalfoundries Inc. | Method and system for detecting existence of an undesirable particle during semiconductor fabrication |
| NL1036785A1 (nl) | 2008-04-18 | 2009-10-20 | Asml Netherlands Bv | Rapid exchange device for lithography reticles. |
| NL2003266A1 (nl) * | 2008-08-11 | 2010-02-15 | Asml Holding Nv | Multi nozzle proximity sensor employing common sensing and nozzle shaping. |
-
2012
- 2012-01-18 US US14/004,199 patent/US20140002805A1/en not_active Abandoned
- 2012-01-18 KR KR1020137026780A patent/KR20140023927A/ko not_active Ceased
- 2012-01-18 CN CN201280011710.3A patent/CN103415811B/zh not_active Expired - Fee Related
- 2012-01-18 WO PCT/EP2012/050727 patent/WO2012123144A1/en not_active Ceased
- 2012-01-18 JP JP2013557017A patent/JP2014507810A/ja not_active Ceased
- 2012-02-23 TW TW101106095A patent/TW201237567A/zh unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI608303B (zh) * | 2013-01-22 | 2017-12-11 | Asml荷蘭公司 | 靜電夾具 |
| US12461452B2 (en) | 2020-11-18 | 2025-11-04 | Asml Netherlands B.V. | Electrostatic clamp |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140023927A (ko) | 2014-02-27 |
| CN103415811B (zh) | 2016-07-06 |
| JP2014507810A (ja) | 2014-03-27 |
| WO2012123144A1 (en) | 2012-09-20 |
| CN103415811A (zh) | 2013-11-27 |
| US20140002805A1 (en) | 2014-01-02 |
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