KR20130124482A - 태양열 적용을 위한 비아 충전 물질 - Google Patents

태양열 적용을 위한 비아 충전 물질 Download PDF

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Publication number
KR20130124482A
KR20130124482A KR1020137008310A KR20137008310A KR20130124482A KR 20130124482 A KR20130124482 A KR 20130124482A KR 1020137008310 A KR1020137008310 A KR 1020137008310A KR 20137008310 A KR20137008310 A KR 20137008310A KR 20130124482 A KR20130124482 A KR 20130124482A
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KR
South Korea
Prior art keywords
microns
conductive paste
size
weight
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020137008310A
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English (en)
Korean (ko)
Inventor
조지 이. 주니어 그래디
캐롤라인 엠. 맥킨리
아지즈 에스. 자키
Original Assignee
페로 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 페로 코포레이션 filed Critical 페로 코포레이션
Publication of KR20130124482A publication Critical patent/KR20130124482A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/16—Silica-free oxide glass compositions containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/20—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing titanium compounds; containing zirconium compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/223—Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1126—Firing, i.e. heating a powder or paste above the melting temperature of at least one of its constituents
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dispersion Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Glass Compositions (AREA)
KR1020137008310A 2010-09-01 2011-09-01 태양열 적용을 위한 비아 충전 물질 Withdrawn KR20130124482A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37895910P 2010-09-01 2010-09-01
US61/378,959 2010-09-01
PCT/US2011/050145 WO2012031078A1 (en) 2010-09-01 2011-09-01 Via fill material for solar applications

Publications (1)

Publication Number Publication Date
KR20130124482A true KR20130124482A (ko) 2013-11-14

Family

ID=45773271

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137008310A Withdrawn KR20130124482A (ko) 2010-09-01 2011-09-01 태양열 적용을 위한 비아 충전 물질

Country Status (8)

Country Link
US (1) US20140332067A1 (enExample)
EP (1) EP2612331A4 (enExample)
JP (1) JP2013545215A (enExample)
KR (1) KR20130124482A (enExample)
CN (1) CN103430240A (enExample)
BR (1) BR112013004884A2 (enExample)
SG (1) SG188359A1 (enExample)
WO (1) WO2012031078A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097070A (zh) * 2015-07-22 2015-11-25 深圳市春仰科技有限公司 太阳能电池正面导电银浆及其制备方法

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US10038109B2 (en) * 2011-09-09 2018-07-31 Heraeus Precious Metals North America Conshohocken Llc Silver solar cell contacts
US9374892B1 (en) * 2011-11-01 2016-06-21 Triton Microtechnologies Filling materials and methods of filling through holes for improved adhesion and hermeticity in glass substrates and other electronic components
KR20140114881A (ko) * 2012-01-18 2014-09-29 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 유기 아연 화합물을 포함하는 태양 전지 금속화
US20130319496A1 (en) * 2012-06-01 2013-12-05 Heraeus Precious Metals North America Conshohocken Llc Low-metal content electroconductive paste composition
CN104769682B (zh) * 2012-08-31 2019-01-18 赫劳斯贵金属有限两和公司 在电极制备中的包含Ag纳米颗粒和球形Ag微米颗粒的导电浆料
US9763317B2 (en) * 2013-03-14 2017-09-12 Cisco Technology, Inc. Method and apparatus for providing a ground and a heat transfer interface on a printed circuit board
EP2787510B1 (en) * 2013-04-02 2018-05-30 Heraeus Deutschland GmbH & Co. KG Particles comprising Al, Si and Mg in electro-conductive pastes and solar cell preparation
ES2649662T3 (es) * 2013-07-09 2018-01-15 Heraeus Deutschland GmbH & Co. KG Una pasta electroconductora que comprende partículas de Ag con una distribución multimodal del diámetro en la preparación de electrodos en células solares MWT
CN105849895B (zh) * 2013-12-25 2018-12-21 三菱综合材料株式会社 功率模块用基板、及其制造方法和功率模块
CN103824613A (zh) * 2014-03-18 2014-05-28 山西盛驰科技有限公司 一种高性能晶体硅太阳能电池背场的浆料
CN106463198A (zh) * 2014-05-19 2017-02-22 太阳化学公司 包含氧化铋的银浆和其在太阳能电池中的用途
JP6164256B2 (ja) * 2015-07-08 2017-07-19 住友ベークライト株式会社 熱伝導性組成物、半導体装置、半導体装置の製造方法、および放熱板の接着方法
EP4173051A4 (en) * 2016-09-30 2023-12-27 Greatcell Energy Limited SOLAR MODULE AND METHOD FOR PRODUCING A SOLAR MODULE
TW202529282A (zh) * 2016-11-18 2025-07-16 美商山姆科技公司 用於填充之無鉛材料及導電組件
WO2019191621A1 (en) 2018-03-30 2019-10-03 Samtec, Inc. Electrically conductive vias and methods for producing same
EP3806111B1 (en) * 2018-07-06 2024-03-13 Senju Metal Industry Co., Ltd. Electrically conductive paste and sintered body
CN109659067A (zh) * 2018-12-06 2019-04-19 中国科学院山西煤炭化学研究所 用于perc晶体硅太阳能电池的正银浆料及制法
US12100647B2 (en) 2019-09-30 2024-09-24 Samtec, Inc. Electrically conductive vias and methods for producing same
DE102021000640A1 (de) 2021-02-09 2022-08-11 Azur Space Solar Power Gmbh Verfahren zur Strukturierung einer Isolationsschicht auf einer Halbleiterscheibe
CN120452883B (zh) * 2025-07-08 2025-10-31 浙江晶科新材料有限公司 银浆和太阳能电池

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JPH1012045A (ja) * 1996-06-25 1998-01-16 Sumitomo Metal Mining Co Ltd 低温焼成用導電ペースト
US5874197A (en) * 1997-09-18 1999-02-23 E. I. Du Pont De Nemours And Company Thermal assisted photosensitive composition and method thereof
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JP5530920B2 (ja) * 2007-04-25 2014-06-25 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 銀及びニッケル、もしくは、銀及びニッケル合金からなる厚膜導電体形成、及びそれから作られる太陽電池
US8309844B2 (en) * 2007-08-29 2012-11-13 Ferro Corporation Thick film pastes for fire through applications in solar cells
CN101609849B (zh) * 2009-07-13 2010-11-03 中南大学 太阳能电池正面电极用银导体浆料及其制备工艺

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097070A (zh) * 2015-07-22 2015-11-25 深圳市春仰科技有限公司 太阳能电池正面导电银浆及其制备方法

Also Published As

Publication number Publication date
SG188359A1 (en) 2013-04-30
JP2013545215A (ja) 2013-12-19
WO2012031078A1 (en) 2012-03-08
BR112013004884A2 (pt) 2016-05-03
US20140332067A1 (en) 2014-11-13
CN103430240A (zh) 2013-12-04
EP2612331A4 (en) 2014-12-17
EP2612331A1 (en) 2013-07-10

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Patent event date: 20130401

Patent event code: PA01051R01D

Comment text: International Patent Application

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N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20151005

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid