JP2013545215A - 太陽光装置用のビアフィル材 - Google Patents

太陽光装置用のビアフィル材 Download PDF

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Publication number
JP2013545215A
JP2013545215A JP2013527306A JP2013527306A JP2013545215A JP 2013545215 A JP2013545215 A JP 2013545215A JP 2013527306 A JP2013527306 A JP 2013527306A JP 2013527306 A JP2013527306 A JP 2013527306A JP 2013545215 A JP2013545215 A JP 2013545215A
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microns
range
paste
weight
size
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JP2013527306A
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English (en)
Japanese (ja)
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JP2013545215A5 (enExample
Inventor
ジョージ イー． ジュニア グラッディ
キャロライン エム． マッキンリー
アジズ エス． シャイカ
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フェッロ コーポレーション
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Publication of JP2013545215A publication Critical patent/JP2013545215A/ja
Publication of JP2013545215A5 publication Critical patent/JP2013545215A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/16—Silica-free oxide glass compositions containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/20—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing titanium compounds; containing zirconium compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/223—Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0261—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias characterised by the filling method or the material of the conductive fill
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1126—Firing, i.e. heating a powder or paste above the melting temperature of at least one of its constituents
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Glass Compositions (AREA)
  • Photovoltaic Devices (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
JP2013527306A 2010-09-01 2011-09-01 太陽光装置用のビアフィル材 Pending JP2013545215A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37895910P 2010-09-01 2010-09-01
US61/378,959 2010-09-01
PCT/US2011/050145 WO2012031078A1 (en) 2010-09-01 2011-09-01 Via fill material for solar applications

Publications (2)

Publication Number Publication Date
JP2013545215A true JP2013545215A (ja) 2013-12-19
JP2013545215A5 JP2013545215A5 (enExample) 2016-01-14

Family

ID=45773271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013527306A Pending JP2013545215A (ja) 2010-09-01 2011-09-01 太陽光装置用のビアフィル材

Country Status (8)

Country Link
US (1) US20140332067A1 (enExample)
EP (1) EP2612331A4 (enExample)
JP (1) JP2013545215A (enExample)
KR (1) KR20130124482A (enExample)
CN (1) CN103430240A (enExample)
BR (1) BR112013004884A2 (enExample)
SG (1) SG188359A1 (enExample)
WO (1) WO2012031078A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014003285A (ja) * 2012-06-01 2014-01-09 Heraeus Precious Metals North America Conshohocken Llc 低金属含量導電性ペースト組成物

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* Cited by examiner, † Cited by third party
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WO2013036510A1 (en) * 2011-09-09 2013-03-14 Ferro Corporation Silver solar cell contacts
US9374892B1 (en) * 2011-11-01 2016-06-21 Triton Microtechnologies Filling materials and methods of filling through holes for improved adhesion and hermeticity in glass substrates and other electronic components
JP6246135B2 (ja) * 2012-01-18 2017-12-13 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 有機亜鉛化合物を含有する太陽電池の金属化
KR20150052188A (ko) * 2012-08-31 2015-05-13 헤레우스 프레셔스 메탈스 게엠베하 운트 코. 카게 전극 제조에서 Ag 나노-입자 및 구형 Ag 마이크로-입자를 포함하는 전기-전도성 페이스트
US9763317B2 (en) * 2013-03-14 2017-09-12 Cisco Technology, Inc. Method and apparatus for providing a ground and a heat transfer interface on a printed circuit board
ES2684721T3 (es) * 2013-04-02 2018-10-04 Heraeus Deutschland GmbH & Co. KG Partículas que comprenden AI, Si y Mg en pastas electroconductoras y preparación de células fotovoltaicas
EP2824672B1 (en) * 2013-07-09 2017-08-30 Heraeus Deutschland GmbH & Co. KG An electro-conductive paste comprising Ag particles with a multimodal diameter distribution in the preparation of electrodes in MWT solar cells
KR102225427B1 (ko) * 2013-12-25 2021-03-08 미쓰비시 마테리알 가부시키가이샤 파워 모듈용 기판 및 그 제조 방법, 파워 모듈
CN103824613A (zh) * 2014-03-18 2014-05-28 山西盛驰科技有限公司 一种高性能晶体硅太阳能电池背场的浆料
US20170271535A1 (en) * 2014-05-19 2017-09-21 Sun Chemical Corporation A silver paste containing bismuth oxide and its use in solar cells
JP6164256B2 (ja) * 2015-07-08 2017-07-19 住友ベークライト株式会社 熱伝導性組成物、半導体装置、半導体装置の製造方法、および放熱板の接着方法
CN105097070B (zh) * 2015-07-22 2017-05-31 深圳市春仰科技有限公司 太阳能电池正面导电银浆及其制备方法
AU2017337293A1 (en) * 2016-09-30 2019-05-16 Greatcell Energy Limited A solar module and a method of fabricating a solar module
US20190322572A1 (en) 2016-11-18 2019-10-24 Samtec Inc. Filling materials and methods of filling through holes of a substrate
CN112154538A (zh) 2018-03-30 2020-12-29 申泰公司 导电过孔及其制造方法
CN112272851B (zh) * 2018-07-06 2022-03-01 千住金属工业株式会社 导电性糊料和烧结体
CN109659067A (zh) * 2018-12-06 2019-04-19 中国科学院山西煤炭化学研究所 用于perc晶体硅太阳能电池的正银浆料及制法
WO2021067330A2 (en) 2019-09-30 2021-04-08 Samtec, Inc. Electrically conductive vias and methods for producing same
DE102021000640A1 (de) * 2021-02-09 2022-08-11 Azur Space Solar Power Gmbh Verfahren zur Strukturierung einer Isolationsschicht auf einer Halbleiterscheibe
CN120452883B (zh) * 2025-07-08 2025-10-31 浙江晶科新材料有限公司 银浆和太阳能电池

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1012045A (ja) * 1996-06-25 1998-01-16 Sumitomo Metal Mining Co Ltd 低温焼成用導電ペースト
JPH11153857A (ja) * 1997-09-18 1999-06-08 E I Du Pont De Nemours & Co 熱に補助された光感受性組成物およびそれについての方法
JP2007018884A (ja) * 2005-07-07 2007-01-25 Noritake Co Ltd 導電性ペースト
JP2007294677A (ja) * 2006-04-25 2007-11-08 Sharp Corp 太陽電池電極用導電性ペースト
JP2010526414A (ja) * 2007-04-25 2010-07-29 フエロ コーポレーション 銀及びニッケル、もしくは、銀及びニッケル合金からなる厚膜導電体形成、及びそれから作られる太陽電池
JP2010538466A (ja) * 2007-08-29 2010-12-09 フエロ コーポレーション 太陽電池におけるファイヤースルー用の厚膜ペースト

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US6384473B1 (en) * 2000-05-16 2002-05-07 Sandia Corporation Microelectronic device package with an integral window
KR101087202B1 (ko) * 2003-11-27 2011-11-29 쿄세라 코포레이션 태양 전지 모듈
WO2007125879A1 (ja) * 2006-04-25 2007-11-08 Sharp Corporation 太陽電池電極用導電性ペースト
CN101609849B (zh) * 2009-07-13 2010-11-03 中南大学 太阳能电池正面电极用银导体浆料及其制备工艺

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1012045A (ja) * 1996-06-25 1998-01-16 Sumitomo Metal Mining Co Ltd 低温焼成用導電ペースト
JPH11153857A (ja) * 1997-09-18 1999-06-08 E I Du Pont De Nemours & Co 熱に補助された光感受性組成物およびそれについての方法
JP2007018884A (ja) * 2005-07-07 2007-01-25 Noritake Co Ltd 導電性ペースト
JP2007294677A (ja) * 2006-04-25 2007-11-08 Sharp Corp 太陽電池電極用導電性ペースト
JP2010526414A (ja) * 2007-04-25 2010-07-29 フエロ コーポレーション 銀及びニッケル、もしくは、銀及びニッケル合金からなる厚膜導電体形成、及びそれから作られる太陽電池
JP2010538466A (ja) * 2007-08-29 2010-12-09 フエロ コーポレーション 太陽電池におけるファイヤースルー用の厚膜ペースト

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014003285A (ja) * 2012-06-01 2014-01-09 Heraeus Precious Metals North America Conshohocken Llc 低金属含量導電性ペースト組成物

Also Published As

Publication number Publication date
SG188359A1 (en) 2013-04-30
BR112013004884A2 (pt) 2016-05-03
EP2612331A4 (en) 2014-12-17
EP2612331A1 (en) 2013-07-10
WO2012031078A1 (en) 2012-03-08
CN103430240A (zh) 2013-12-04
US20140332067A1 (en) 2014-11-13
KR20130124482A (ko) 2013-11-14

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