KR20130115208A - 웨이퍼 지지 시스템을 위한 광학적으로 조정된 금속화된 광-열 변환층 - Google Patents

웨이퍼 지지 시스템을 위한 광학적으로 조정된 금속화된 광-열 변환층 Download PDF

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Publication number
KR20130115208A
KR20130115208A KR1020137000781A KR20137000781A KR20130115208A KR 20130115208 A KR20130115208 A KR 20130115208A KR 1020137000781 A KR1020137000781 A KR 1020137000781A KR 20137000781 A KR20137000781 A KR 20137000781A KR 20130115208 A KR20130115208 A KR 20130115208A
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KR
South Korea
Prior art keywords
layer
conversion layer
light
metal
substrate
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Withdrawn
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KR1020137000781A
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English (en)
Korean (ko)
Inventor
헝 티 트란
가즈타 사이토
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
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Publication of KR20130115208A publication Critical patent/KR20130115208A/ko
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10Methods of surface bonding and/or assembly therefor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laminated Bodies (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020137000781A 2010-06-16 2011-05-27 웨이퍼 지지 시스템을 위한 광학적으로 조정된 금속화된 광-열 변환층 Withdrawn KR20130115208A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35532410P 2010-06-16 2010-06-16
US61/355,324 2010-06-16
PCT/US2011/038281 WO2011159456A2 (en) 2010-06-16 2011-05-27 Optically tuned metalized light to heat conversion layer for wafer support system

Publications (1)

Publication Number Publication Date
KR20130115208A true KR20130115208A (ko) 2013-10-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137000781A Withdrawn KR20130115208A (ko) 2010-06-16 2011-05-27 웨이퍼 지지 시스템을 위한 광학적으로 조정된 금속화된 광-열 변환층

Country Status (5)

Country Link
US (1) US20130087959A1 (enExample)
JP (1) JP2013534721A (enExample)
KR (1) KR20130115208A (enExample)
TW (1) TWI523142B (enExample)
WO (1) WO2011159456A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR20180137327A (ko) * 2017-06-16 2018-12-27 울산과학기술원 광 열전 소자용 구조체 및 그 제조방법과 그를 이용한 광 열전 소자

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JP5735774B2 (ja) * 2010-09-30 2015-06-17 芝浦メカトロニクス株式会社 保護体、基板積層体、貼り合わせ装置、剥離装置、および基板の製造方法
JP6088230B2 (ja) * 2012-12-05 2017-03-01 東京応化工業株式会社 積層体の形成方法
DE102013100711B4 (de) * 2013-01-24 2021-07-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Vielzahl optoelektronischer Bauelemente
TWI576190B (zh) 2013-08-01 2017-04-01 Ibm 使用中段波長紅外光輻射燒蝕之晶圓剝離
EP2908335B1 (en) 2014-02-14 2020-04-15 ams AG Dicing method
KR20160064031A (ko) * 2014-11-27 2016-06-07 어드밴스 프로세스 인테그레이트 테크놀로지 리미티드 웨이퍼 기판을 사용하지 않는 인터포저층의 제작 방법
US10074626B2 (en) 2016-06-06 2018-09-11 Shin-Etsu Chemical Co., Ltd. Wafer laminate and making method
JP2017224718A (ja) * 2016-06-15 2017-12-21 日本電信電話株式会社 半導体デバイスのガラス基板固定方法及び剥離方法
JP6791086B2 (ja) 2016-10-11 2020-11-25 信越化学工業株式会社 ウエハ積層体、その製造方法、及びウエハ積層用接着剤組成物
JP6614090B2 (ja) 2016-10-11 2019-12-04 信越化学工業株式会社 ウエハ積層体及びその製造方法
JP7035915B2 (ja) 2018-09-03 2022-03-15 信越化学工業株式会社 薄型ウエハの製造方法
TWI844589B (zh) * 2018-11-29 2024-06-11 日商力森諾科股份有限公司 製造半導體裝置的方法、光吸收積層體及暫時固定用積層體
JP7597025B2 (ja) * 2019-05-22 2024-12-10 株式会社レゾナック 半導体装置を製造する方法
KR102713057B1 (ko) * 2019-10-18 2024-10-02 쓰리엠 이노베이티브 프로퍼티즈 컴파니 접착 필름
US11996384B2 (en) * 2020-12-15 2024-05-28 Pulseforge, Inc. Method and apparatus for debonding temporarily bonded wafers in wafer-level packaging applications
US11908723B2 (en) 2021-12-03 2024-02-20 International Business Machines Corporation Silicon handler with laser-release layers
KR20250006814A (ko) 2022-06-03 2025-01-13 에베 그룹 에. 탈너 게엠베하 접착을 위한 얇은 층으로 구성된 다층 시스템
JP2023181886A (ja) * 2022-06-13 2023-12-25 日東電工株式会社 電子部品仮固定用粘着シート

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JP2686511B2 (ja) * 1989-05-31 1997-12-08 日東電工株式会社 半導体ウエハ保護フィルムの剥離方法
JP3809681B2 (ja) * 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
US7534498B2 (en) * 2002-06-03 2009-05-19 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
JP4565804B2 (ja) * 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
JP2005209829A (ja) * 2004-01-22 2005-08-04 Taiyo Yuden Co Ltd 半導体ウェハ固定方法及び装置、並びに半導体ウェハが固定された構造体
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Publication number Priority date Publication date Assignee Title
KR20180137327A (ko) * 2017-06-16 2018-12-27 울산과학기술원 광 열전 소자용 구조체 및 그 제조방법과 그를 이용한 광 열전 소자

Also Published As

Publication number Publication date
WO2011159456A2 (en) 2011-12-22
TW201222713A (en) 2012-06-01
TWI523142B (zh) 2016-02-21
US20130087959A1 (en) 2013-04-11
JP2013534721A (ja) 2013-09-05
WO2011159456A3 (en) 2012-04-05

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PA0105 International application

Patent event date: 20130111

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid