KR20130110987A - Organic light emitting diode display device and fabricating method of the same - Google Patents

Abstract

PURPOSE: An organic light emitting diode display device and a manufacturing method thereof omit a process of forming a protective film and simplify a process by forming a connection electrode at the lower part of an interlayer insulating film and using a halftone mask. CONSTITUTION: A buffer layer (110) is formed on an insulating substrate (100) including a display region and a pad region. An interlayer insulating film (118) is formed on the front of the substrate in which a gate electrode (Gate), a connection electrode (Con), a capacitor, and a second electrode (115c) are formed. Multiple contact holes (200a-200d) are formed on the interlayer insulating film. An organic layer (123) is formed on the front of the substrate including a source electrode (119a), a drain electrode (119b), a power wire (121), and a pad part (122). A contact metal layer (124a), a power contact part (Po), and a pad contact part (124c) are formed on the substrate in which the organic layer is formed.

Description

[0001] The present invention relates to an organic light emitting diode (OLED) display device and a manufacturing method thereof.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode display, and more particularly, to an organic light emitting diode display that simplifies the process by eliminating the protective film by forming a connection electrode under the interlayer insulating film and using a halftone mask.

2. Description of the Related Art Recently, various flat panel display devices capable of reducing weight and volume, which are disadvantages of cathode ray tubes (CRTs), have been developed. Such a flat panel display device includes a liquid crystal display (LCD), a field emission display (FED), a plasma display panel (PDP) And a light emitting device (Electroluminescence Device).

PDP has attracted attention as a display device that is most advantageous for large screen size but small size because of its simple structure and manufacturing process, but it has disadvantage of low luminous efficiency, low luminance and high power consumption. Thin Film Transistor LCD (TFT LCD) is the most widely used flat panel display device, but has a narrow viewing angle and low response speed. The electroluminescence device is divided into an inorganic light emitting diode display device and an organic light emitting diode display device according to the material of the light emitting layer. Of these organic light emitting diode display devices, self light emitting devices are self light emitting devices, There is a big advantage. A basic structure of such an organic light emitting diode display will be described with reference to FIG. 1.

1 illustrates a conventional organic light emitting diode display.

Referring to FIG. 1, a conventional organic light emitting diode display is divided into a display area and a pad area, and the display area is divided into a plurality of pixel areas, and each pixel area includes a thin film transistor, a capacitor, and an organic light emitting diode. .

In addition, a gate pad, a data pad, a power supply pad, and the like are formed in the pad region.

A buffer layer 11 is formed on the insulating substrate 10, and a region in which the thin film transistor is formed includes a source region 12a, a channel region 12b, and a drain region 12c on the buffer layer 11. The semiconductor layer 12, the gate insulating film 14, the gate electrode 15, the source electrode 19a and the drain electrode 19b are formed. The source electrode 19a and the drain electrode 19b are connected to the source region 12a and the drain region 12c of the semiconductor layer 12. The capacitor region is formed of a capacitor first electrode 13, an interlayer insulating film 16, a capacitor second electrode 17, a protective layer 20, and a capacitor third electrode 22. The pad region includes a power supply pad ( 18) and a power contact portion 24.

A protective layer 20 is formed on the source electrode 19a, the drain electrode 19b, the capacitor second electrode 17, and the power supply pad 18, and the drain electrode 19b and the protective layer 20. A contact hole through which the power supply pad 18 is exposed is formed. The connection electrode 21 is formed on the exposed drain electrode 19b, and the power contact portion 24 is formed on the exposed power source pad 18.

An organic layer 23 is formed on the entire surface of the substrate 10 including the display area and the pad area, and a contact hole in which the connection electrode 21 is exposed is formed in the organic layer 23. The lower electrode 25 of the organic light emitting diode OLED is formed on the exposed connection electrode 21. The barrier layer 26 exposing the lower electrode 25 in pixel units is formed on the lower electrode 25, and an organic light emitting layer 27 is formed on the exposed lower electrode 25. The upper electrode 28 is formed on the entire surface of the substrate 10 including the organic light emitting layer 27.

Looking at the manufacturing method of the conventional organic light emitting diode display device, forming a semiconductor layer 12 on the buffer layer (11); Forming a gate electrode 15 and a capacitor first electrode 13 on the gate insulating film 14; Forming a contact hole on the interlayer insulating film (16) to connect with the source region (12a) or the drain region (12b) of the semiconductor layer; Forming a source electrode (19a), a drain electrode (19b), a capacitor second electrode (17), and a power supply pad (18) on the interlayer insulating film (16); Forming a contact hole on the protective layer 20 to be connected to the drain electrode 19b; Forming a connection electrode (21), a capacitor third electrode (22), and a power contact portion (24) on the protective layer (20); Forming a contact hole on the organic layer 23 to connect with the connection electrode 21; Forming an organic light emitting diode lower electrode 25 on the organic layer 23; And forming a barrier layer 26 on the organic light emitting diode lower electrode 25. That is, a total of nine mask processes are required, and a conventional organic light emitting diode display device has a problem in that a number of manufacturing processes are required.

In this case, since the manufacturing process is complicated and there is a limit in cost reduction, a method of reducing the manufacturing cost by simplifying the manufacturing process is required.

The present invention provides an organic light emitting diode display device which simplifies the process by forming a gate electrode, a connecting electrode and a capacitor second electrode using a halftone mask on a gate insulating film, and omits a protective layer on an upper surface of the interlayer insulating film, and a manufacturing method thereof. The purpose is to provide.

The present invention also provides an organic light emitting diode display device and a method of manufacturing the same, which simplify a process without reducing reflection efficiency by forming a contact metal layer, an organic light emitting diode bottom electrode, a power contact portion, and a pad contact portion using a halftone mask. There is a purpose.

Another object of the present invention is to provide an organic light emitting diode display device and a method of manufacturing the same, forming a pad contact portion on a pad portion to prevent the pad portion from corroding and stabilizing the process.

The organic light emitting diode display device of the present invention for solving the above problems of the prior art, the buffer layer formed on an insulating substrate; A thin film transistor formed on the buffer layer, a connection electrode, a capacitor, a power supply unit, and a pad unit; An organic light emitting diode formed with the thin film transistor, the capacitor and the organic layer interposed therebetween; A semiconductor layer comprising a source region, a channel region and a drain region formed on the buffer layer, a gate insulating film, a gate electrode, and a source electrode connected to the source region and the drain region of the semiconductor layer, which constitute the thin film transistor. A drain electrode; An interlayer insulating film formed between the capacitor first, second and third electrodes and the first and second electrodes and the second and third electrodes constituting the capacitor; A power wiring and a power contact portion formed on the interlayer insulating film, constituting the power supply portion; A pad contact portion formed to surround the pad portion on the pad portion; And a lower electrode, an organic light emitting layer, and an upper electrode constituting the organic light emitting diode, wherein the connection electrode is formed on the gate insulating layer, and the drain electrode of the thin film transistor is electrically connected to the connection electrode. The organic light emitting diode and the connection electrode are electrically connected by a connection contact part and a contact metal layer.

In addition, the organic light emitting diode display device manufacturing method of the present invention, forming a buffer layer on an insulating substrate; Forming a semiconductor layer and a capacitor first electrode on the buffer layer; Forming a gate insulating film on the substrate including the semiconductor layer and the capacitor first electrode; Forming a gate electrode, a connection electrode, and a capacitor second electrode on the gate insulating film; Forming a source region and a drain region in the semiconductor layers below both sides of the gate electrode; Forming an interlayer insulating film on the gate electrode, the connecting electrode, and the capacitor second electrode; Forming a plurality of contact holes in the interlayer insulating layer through the etching process to expose the source region, the drain region and the connection electrode of the semiconductor layer, respectively; Forming a source electrode connected to the source region of the semiconductor layer through the plurality of contact holes, a drain electrode connected to the drain region and the connection electrode of the semiconductor layer, and a connection contact portion connected to the connection electrode; Forming a capacitor third electrode, a power wiring, and a pad part on the interlayer insulating film; Forming an organic layer on the substrate including the source electrode, the drain electrode, the connection contact part, the capacitor third electrode, and the power wiring; Forming first and second contact holes in the organic layer through the etching process to expose the connection contact portion and the electrode wiring; Forming a contact metal layer and an organic light emitting diode lower electrode connected to the connection contact part through the first contact hole, forming a power contact part connected to the power wiring through the second contact hole, and covering the pad part Forming a pad contact; Forming an organic light emitting layer on the organic light emitting diode lower electrode; And forming an organic light emitting diode upper electrode on the organic light emitting layer.

An organic light emitting diode display and a method of manufacturing the same according to the present invention are formed by forming a gate electrode, a connecting electrode and a capacitor second electrode using a halftone mask on a gate insulating film, and omitting a protective layer on the upper surface of the interlayer insulating film. There is a first effect that simplifies.

In addition, an organic light emitting diode display and a method of manufacturing the same according to the present invention are formed by using a halftone mask to form a contact metal layer, an organic light emitting diode bottom electrode, a power contact portion and a pad contact portion to simplify a process without reducing reflection efficiency. 2 is effective.

In addition, the organic light emitting diode display according to the present invention and a method of manufacturing the same have a third effect of stabilizing a process without forming a pad contact portion to corrode the pad portion.

1 illustrates a conventional organic light emitting diode display.
2A to 2H illustrate a method of manufacturing the organic light emitting diode display device of the present invention.
3A to 3D illustrate a method of manufacturing a gate electrode, a connecting electrode, and a capacitor second electrode of the organic light emitting diode display of the present invention.
4A to 4D illustrate a method of manufacturing a contact metal layer, an organic light emitting diode lower electrode, a power contact portion, and a pad contact portion of the organic light emitting diode display of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention can be fully conveyed to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

2A to 2H illustrate a manufacturing process of the organic light emitting diode display of the present invention.

Referring to FIG. 2A, the organic light emitting diode display of the present invention forms a buffer layer 110 on an insulating substrate 100 including a display area and a pad area. The display area is an area for displaying an image, and is divided into a light emitting area and a non-light emitting area, and the pad area is an area where pad parts receiving signals from an external system are formed.

The substrate 100 may be formed of glass, plastic, polyimide (PI), or the like, and the buffer layer 110 may be formed of a single layer or a stacked structure thereof using an insulating film such as a silicon oxide film or a silicon nitride film. . In this case, the buffer layer 110 serves to prevent the diffusion of moisture or impurities generated in the substrate 100 or to control the heat transfer rate during crystallization, so that the amorphous silicon layer can be crystallized well.

As described above, when the buffer layer 110 is formed on the substrate 100, a semiconductor layer such as an amorphous silicon film is formed, and then a photoresist is formed on the semiconductor layer. The photoresist pattern is formed by performing an exposure and development process using a first mask including a transmissive portion and a blocking portion. The semiconductor layer is etched using the photoresist pattern as a mask to form the semiconductor layer 112 and the capacitor first electrode 113 of the thin film transistor.

Referring to FIG. 2B, a gate insulating film 114 and a metal film are sequentially formed on the entire surface of the substrate 100 including the semiconductor layer 112 and the capacitor first electrode 113, and then the gate insulating film is formed using a mask process. The gate electrode Gate, the connection electrode Con, and the capacitor second electrode 115c are formed on the 114. Hereinafter, the present invention will be described in detail with reference to FIGS. 3A to 3D.

3A to 3D illustrate a method of manufacturing a gate electrode, a connecting electrode, and a capacitor second electrode of the organic light emitting diode display of the present invention.

Referring to FIG. 3A, an ITO layer 115 and a metal layer 116 are stacked on the substrate 100 on which the gate insulating layer 114 is formed. The metal layer 116 may be aluminum-neodymium (AlNd), molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W), copper (Cu), chromium (Cr), aluminum (Al) or their It can be formed using an alloy formed from the combination.

Referring to FIG. 3B, stepped photoresist patterns 300a, 300b, and 300c are formed on the ITO layer 115 and the metal layer 116 by photolithography using the first halftone mask 150. The first halftone mask 150 may be formed as a diffraction mask.

Specifically, a negative photoresist, a photosensitive material, is formed on the ITO layer 115 and the metal layer 116. However, it is also possible to proceed with the process using positive photoresist.

In this case, the negative photoresist is a photosensitive material which is a material that is cured when light is irradiated. Then, a first halftone mask 150 is covered on the negative photoresist and irradiated with light. The first halftone mask 150 includes a blocking portion A, a transmitting portion B, and a transflective portion c. The transmitting portion B transmits light as it is, and the transflective portion C A transflective material having a different transmittance is used to pass less light than the transmissive portion B, and the blocking portion A completely blocks the light.

Therefore, the negative photoresist facing the transmissive portion B of the first halftone mask 150 is irradiated and cured by light, so that the first photoresist patterns 300a and 300b have high steps on the gate electrode and the connection electrode region. And the negative photoresist on the capacitor second electrode region facing the transflective portion C is semi-cured by the light transmitted through the transflective portion C, so that the second step of the photoresist pattern 300c has a low level difference. To form. The negative photoresist facing the blocking portion A of the first halftone mask 150 is removed to expose the metal layer 116.

3C, the exposed metal layer 116 and the ITO layer 115 are patterned by etching the first and second photoresist patterns 300a, 300b, and 300c as masks.

In the patterning process, the gate electrode is composed of the first ITO layer 115a and the first metal layer 116a, and the connection electrode Con is composed of the second ITO layer 115b and the second metal layer 116b. The third ITO layer 115c and the third metal layer 116c serving as the capacitor second electrode 115 c are formed in the region where the capacitor electrode is formed.

3D, when the ashing process is performed on the first and second photoresist patterns 300a, 300b, and 300c, a second photoresist pattern formed on the capacitor second electrode region having a low level difference is formed. The 300c is removed to expose the third metal layer 116c, and the first photoresist patterns 300a and 300b on the gate electrode and the connection electrode region remain.

When the third metal layer 116c is etched, the capacitor second electrode 115c is formed. Thereafter, when the remaining photoresist patterns 300a and 300b are removed, the gate electrode Gate and the connection electrode Con are formed.

The source electrode 112a and the drain region 112e are formed by doping a high concentration of impurity ions using the gate electrode Gate as a mask. Lightly doped drain (LDD) doped layers are formed in the source region 112a and the drain region 112e of the semiconductor layer 112 by doping low concentration impurity ions before forming the source region 112a and the drain region 112e. And blocking the LDD layers 112b and 112d through photoresist and mask processes, and then doping a high concentration of impurity ions to form the source region 112a and the drain region 112e. As such, the reason for forming the LDD layers 112b and 112d is to reduce the electric current applied to the junction due to the resistance in the region, thereby reducing the off current and minimizing the reduction of the on current. Although not shown, 112c, which is not described, is a channel region.

The impurity ions may be formed of n-type impurity ions using phosphorus (P) or the like and p-type impurity ions using boron (B).

Referring to FIG. 2C, an interlayer insulating layer 118 is formed on the entire surface of the substrate 100 on which the gate electrode, the connection electrode Con, and the capacitor second electrode 115c are formed. A photoresist is formed on the interlayer insulating layer 118, and a photoresist pattern is formed by an exposure and development process using a second mask including a transmission part and a blocking part. The interlayer insulating layer 118 is etched using the photoresist pattern as a mask to expose the source region 112a of the semiconductor layer 112 and the drain region of the semiconductor layer 112. A drain contact hole 200b exposing 112e) and two first and second connection contact holes 200c and 200d exposing the connection electrode Con are formed.

Referring to FIG. 2D, a source / drain metal layer is formed on the entire surface of the substrate 100 including the interlayer insulating layer 118 on which the plurality of contact holes 200a, 200b, 200c, and 200d are formed. A photoresist is formed on the source / drain metal layer, and a photoresist pattern is formed by an exposure and development process by using a third mask including a transmission part and a blocking part. The source / drain metal layer is etched using the photoresist pattern as a mask, so that the source electrode 119a, the drain electrode 119b, the connection contact portion 119c, the capacitor third electrode 120, the power wiring 121, The pad part 122 is formed. The source electrode 119a is formed on the source region 112a of the semiconductor layer 112 through the source contact hole 200a, and the drain electrode 119b is formed of the drain contact hole 200b and the first electrode. 1 is formed on the drain region 112e and the connection electrode Con of the semiconductor layer 112 through the connection contact hole 200c, and the connection contact part 119c opens the second connection contact hole 200d. It is formed on the connection electrode (Con) through. Accordingly, the drain electrode 119b electrically connects the drain region 112 e of the semiconductor layer 112 and the connection electrode Con.

Next, referring to FIG. 2E, the source electrode 119a, the drain electrode 119b, the connection contact part 119c, the capacitor third electrode 120, the power supply wiring 121, and the pad part 122 are included. The organic layer 123 is formed on the entire surface of the substrate 100. A photoresist is formed on the organic layer 123, and a photoresist pattern is formed by an exposure and development process by using a fourth mask including a transmission part and a blocking part. The organic layer 123 of the pad area including the pad part 122 is etched using the photoresist pattern as a mask, and the organic layer 123 is formed only in the display area, and the organic layer 123 is etched to form the mask. A first contact hole 201a exposing the connection contact portion 119c and a second contact hole 201b exposing the power wiring 121 are formed. The region where the second contact hole 201b is formed may be a pad portion of the power wiring 121.

Next, referring to FIG. 2F, the contact metal layer 124a, the organic light emitting diode lower electrode 125a, the power contact portion Po, and the substrate 100 are formed on the substrate 100 on which the organic layer 123 and the pad portion 122 are formed. The pad contact portion 124c is formed. This will be described in detail with reference to FIGS. 4A to 4D.

4A to 4D illustrate a method of manufacturing a contact metal layer, an organic light emitting diode lower electrode, a power contact portion, and a pad contact portion of the organic light emitting diode display of the present invention.

Referring to FIG. 4A, the metal layer 124 and the conductive layer 125 are formed on the entire surface of the substrate 100 on which the first and second contact holes 201a and 201b and the pad unit 122 are formed. Form. The metal layer 125 may be formed of aluminum-neodymium (AlNd), molybdenum (Mo), or the like, and the conductive layer 125 may be formed of ITO / AlNd, ITO / Al, or ITO / Ag / ITO. .

Referring to FIG. 4B, stepped photoresist patterns 400a, 400b, and 400c are formed on the metal layer 124 and the conductive layer 125 by photolithography using the second halftone mask 160. The second halftone mask 160 may be formed as a diffraction mask.

Specifically, a negative photoresist, a photosensitive material, is formed on the metal layer 124 and the conductive layer 125. However, it is also possible to proceed with the process using positive photoresist.

In this case, the negative photoresist is a photosensitive material which is a material that is cured when light is irradiated. Then, a second halftone mask 160 is put on the negative photoresist and irradiated with light. The second halftone mask 160 includes a blocking portion A, a transmissive portion B, and a transflective portion c, wherein the transmissive portion B transmits light as it is, and the transflective portion C A transflective material having a different transmittance is used to pass less light than the transmissive portion B, and the blocking portion A completely blocks the light.

Therefore, the negative photoresist facing the transmissive portion B of the second halftone mask 160 is irradiated and cured by light to form a third photoresist pattern having a high step height between the organic light emitting diode lower electrode region and the power contact region. A fourth photoresist pattern having low steps because the negative photoresist on the pad portion region facing the semi-transmissive portion C is formed by semi-radiation by light transmitted through the semi-transparent portion C. To form 400c. The negative photoresist facing the blocking portion A of the second halftone mask 160 is removed to expose the conductive layer 125.

Referring to FIG. 4C, the exposed conductive layer 125 and the metal layer 124 are patterned by etching the third and fourth photoresist patterns 400a, 400b, and 400c as masks.

Referring to FIG. 4D, when the third and fourth photoresist patterns 400a, 400b, and 400c are ashed, the fourth photoresist pattern 400c formed on the pad region having the low level is removed. Thus, the conductive layer 125c is exposed, and the third photoresist patterns 400a and 400b on the organic light emitting diode lower electrode region and the power contact portion region remain.

When the exposed conductive layer 125c is etched, a pad contact portion 124c is formed. By forming the pad contact portion 124c in the pad portion 122, the pad portion 122 is not corroded and can stabilize the process. Thereafter, when the remaining third photoresist patterns 400a and 400b are removed, the contact metal layer 124a and the contact metal layer 124a formed on the connection contact portion 119c through the first contact hole 201a. An organic light emitting diode lower electrode 125a is formed thereon, and a power contact portion (Po) including a power metal layer 124b and a power conductive layer 125b on the power line 121 through the second contact hole 201b. ) Is formed.

Next, referring to FIG. 2G, the barrier layer 126 is formed on the entire surface of the substrate 100 on which the organic light emitting diode lower electrode 125a, the power contact part Po, and the pad contact part 124c are formed. The partition layer 126 defines a light emitting area and a non-light emitting area. A photoresist is formed on the barrier layer 126, and a photoresist pattern is formed by an exposure and development process using a fifth mask including a transmission part and a blocking part. By using the photoresist pattern as a mask, the barrier layer 126 is etched to expose the pad region including the pad portion 122 and the light emitting region of the lower electrode 125a, thereby partitioning only the non-light emitting region among the display regions. Allow layer 126 to be formed.

Referring to FIG. 2H, an organic light emitting layer 127 is formed on the exposed organic light emitting diode lower electrode 125a, and an upper electrode 128 is formed on the organic light emitting layer 127 and the partition layer 126. The organic light emitting layer 127 may be composed of a single layer made of a light emitting material, and in order to increase light emission efficiency, a hole injection layer, a hole transporting layer, and an emitting material layer It may be composed of multiple layers of an electron transporting layer and an electron injection layer.

The organic light emitting diode may be driven by an upper emission method in which light emitted from the organic emission layer 127 is emitted toward the upper electrode 128. In this case, when a predetermined voltage is applied to the lower electrode 125a and the upper electrode 128 according to the selected color signal, holes provided from the lower electrode 125a and electrons injected from the upper electrode 128 are transferred. The organic light emitting layer 127 is transported to form an exciton, and when the exciton transitions from an excited state to a ground state, light is generated and emitted in the form of visible light. The emitted light passes through the transparent upper electrode 128 and exits to the outside. In this case, the upper electrode 128 may be used by thickly depositing a transparent conductive material on a semi-transparent metal film in which a thin metal material having a low work function is deposited.

Accordingly, an organic light emitting diode display and a method of manufacturing the same according to the present invention may include forming a semiconductor layer 112 and a capacitor first electrode 113 on a buffer layer 110; Forming a gate electrode (Gate), a connecting electrode (Con), and a capacitor second electrode (115c) on the gate insulating layer 114; Forming contact holes 200a, 200b, 200c, and 200d on the interlayer insulating layer 118 exposing the source region 112a and the drain region 112e of the semiconductor layer 112 and the connection electrode Con. ; Forming a source electrode 119a, a drain electrode 119b, a connecting contact portion 119c, a capacitor third electrode 120, a power supply wiring 121, and a pad portion 122 on the interlayer insulating layer 118. ; Forming first and second contact holes (201a, 201b) on the organic layer (123) to connect with the connection contact portion (119c) and the power wiring (121); Forming a contact metal layer (124a), an organic light emitting diode lower electrode (125a), a power contact portion (Po), and a pad contact portion (124c) on the organic layer (123); And forming a barrier layer 126 on the organic light emitting diode lower electrode 125a. That is, a total of five mask processes and two halftone mask processes are required, which simplifies the process.

That is, the present invention omits the step of forming a contact hole on the protective layer by omitting the protective layer formed on the source electrode and the drain electrode and the process required to form the connection electrode on the protective layer. A gate electrode, a connecting electrode, and a capacitor second electrode are formed on the gate insulating layer using a first halftone mask, and the contact metal layer, the organic light emitting diode lower electrode, the power contact portion, and the pad contact portion are formed using the second halftone mask. The present invention provides an organic light emitting diode display and a method of manufacturing the same, which simplify the process without reducing the reflection efficiency. In addition, the present invention has the effect of stabilizing the process by forming a pad contact portion in the pad portion does not corrode the pad portion.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.

100: insulating substrate 110: buffer layer
112: semiconductor layer 113: capacitor first electrode
114: gate insulating film Gate: gate electrode
Con: connecting electrode 115c: capacitor second electrode
118: interlayer insulating film 119a: source electrode
119b: drain electrode 120: capacitor third electrode
121: power supply wiring 122: pad portion
123: organic layer 124a: contact metal layer
125a: lower electrode Po: power contact portion
124c: pad contact portion 126: partition wall layer
127: organic light emitting layer 128: upper electrode

Claims (21)

A buffer layer formed on the insulating substrate;
A thin film transistor formed on the buffer layer, a connection electrode, a capacitor, a power supply unit, and a pad unit;
An organic light emitting diode formed with the thin film transistor, the capacitor and the organic layer interposed therebetween;
A semiconductor layer comprising a source region, a channel region and a drain region formed on the buffer layer, a gate insulating film, a gate electrode, and a source electrode connected to the source region and the drain region of the semiconductor layer, which constitute the thin film transistor. A drain electrode;
An interlayer insulating film formed between the capacitor first, second and third electrodes and the first and second electrodes and the second and third electrodes constituting the capacitor;
A power wiring and a power contact portion formed on the interlayer insulating film, constituting the power supply portion;
A pad contact portion formed to surround the pad portion on the pad portion; And
And a lower electrode, an organic light emitting layer, and an upper electrode constituting the organic light emitting diode.
The connection electrode is formed on the gate insulating layer, the drain electrode of the thin film transistor is electrically connected to the connection electrode, and the organic light emitting diode and the connection electrode are electrically connected by a connection contact portion and a contact metal layer. An organic light emitting diode display device. The method of claim 1,
And a LDD layer is further provided in the source region and the drain region of the semiconductor layer. The method of claim 1,
And the semiconductor layer and the capacitor first electrode are made of the same material. The method of claim 1,
The gate electrode is an organic light emitting diode display device comprising an ITO and a metal layer. The method of claim 1,
And the connection electrode is made of ITO and a metal layer. The method of claim 1,
And the capacitor second electrode is made of ITO. The method of claim 1,
And the source electrode, the drain electrode, the connection contact portion, the capacitor third electrode, the power wiring and the pad portion are made of the same material. The method of claim 1,
The power contact portion includes a power metal layer and a power conductive layer, the power metal layer of the power contact portion is made of the same material as the pad contact portion and the contact metal layer, and the power conductive layer of the power contact portion is the organic light emitting diode lower electrode. An organic light emitting diode display, characterized in that made of the same material. The method of claim 1,
The organic light emitting diode display device of claim 1, wherein the organic light emitting diode lower electrode is made of ITO / AlNd, ITO / Al, or ITO / Ag / ITO. The method of claim 1,
And a barrier rib layer defining a light emitting area and a non-light emitting area on the lower portion of the organic light emitting diode. Forming a buffer layer on the insulating substrate;
Forming a semiconductor layer and a capacitor first electrode on the buffer layer;
Forming a gate insulating film on the substrate including the semiconductor layer and the capacitor first electrode;
Forming a gate electrode, a connection electrode, and a capacitor second electrode on the gate insulating film;
Forming a source region and a drain region in the semiconductor layers below both sides of the gate electrode;
Forming an interlayer insulating film on the gate electrode, the connecting electrode, and the capacitor second electrode;
Forming a plurality of contact holes in the interlayer insulating layer through the etching process to expose the source region, the drain region and the connection electrode of the semiconductor layer, respectively;
Forming a source electrode connected to the source region of the semiconductor layer through the plurality of contact holes, a drain electrode connected to the drain region and the connection electrode of the semiconductor layer, and a connection contact portion connected to the connection electrode;
Forming a capacitor third electrode, a power wiring, and a pad part on the interlayer insulating film;
Forming an organic layer on the substrate including the source electrode, the drain electrode, the connection contact part, the capacitor third electrode, and the power wiring;
Forming first and second contact holes in the organic layer through the etching process to expose the connection contact portion and the electrode wiring;
Forming a contact metal layer and an organic light emitting diode lower electrode connected to the connection contact part through the first contact hole, forming a power contact part connected to the power wiring through the second contact hole, and covering the pad part Forming a pad contact;
Forming an organic light emitting layer on the organic light emitting diode lower electrode; And
And forming an upper electrode of the organic light emitting diode on the organic light emitting layer. The method of claim 11,
In the forming of the source region and the drain region in the semiconductor layer, the method further comprises the step of forming a LDD layer by doping a predetermined portion of the source region and the drain region at low concentration. Way. The method of claim 11,
Forming the gate electrode, the connecting electrode and the capacitor second electrode,
Forming an ITO and a metal layer on the gate insulating film;
A first photoresist pattern having a high step height is formed on the gate electrode region and the connection electrode area on the ITO and the metal layer by using a first halftone mask, and a second photoresist pattern having a low step height is formed on the capacitor second electrode area. Forming a;
Etching the ITO and the metal layer using the first and second photoresist patterns as masks;
Exposing the first and second photoresist patterns to remove only the second photoresist pattern of the capacitor second electrode region to expose the metal layer;
Etching the metal layer of the exposed capacitor second electrode region; And
And ashing the first photoresist pattern. The method of claim 11,
Forming the contact metal layer and the organic light emitting diode lower electrode, the power contact portion and the pad contact portion,
Forming a metal layer and a conductive layer on a substrate including the organic layer, the first and second contact holes, and the pad part;
A third photoresist pattern having a high step height is formed on the organic light emitting diode lower electrode region and the power contact portion region on the metal layer and the conductive layer by using a second halftone mask, and the step difference is low on the pad contact portion region. Forming a photoresist pattern;
Etching the metal layer and the conductive layer using the third and fourth photoresist patterns as masks;
Exposing the conductive layer by abutting the third and fourth photoresist patterns to remove only the fourth photoresist pattern in the pad contact portion region;
Etching the conductive layer of the exposed pad contact region; And
And arranging a third photoresist pattern over the organic light emitting diode display device. 15. The method of claim 14,
The conductive layer is made of ITO / AlNd, ITO / Al or ITO / Ag / ITO. The method of claim 11,
And the lower electrode of the organic light emitting diode is made of ITO / AlNd, ITO / Al, or ITO / Ag / ITO. The method of claim 11,
Forming the organic light emitting layer on the organic light emitting diode lower electrode,
Forming a barrier layer on the organic light emitting diode lower electrode to define a light emitting area and a non-light emitting area;
And forming an organic light emitting layer in the light emitting area. The method of claim 11,
The semiconductor layer and the capacitor first electrode is a method of manufacturing an organic light emitting diode display, characterized in that made of the same material. The method of claim 11,
And the source electrode, the drain electrode, the connection contact portion, the capacitor third electrode, the power wiring and the pad portion are made of the same material. The method of claim 11,
The gate electrode and the connection electrode are made of ITO and a metal layer, and the capacitor second electrode is made of ITO. The method of claim 11,
The power contact portion includes a power metal layer and a power conductive layer, the power metal layer of the power contact portion is made of the same material as the pad contact portion and the contact metal layer, and the power conductive layer of the power contact portion is the organic light emitting diode lower electrode. Organic light emitting diode display device manufacturing method characterized in that consisting of the same material.

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