KR20140016474A - Organic light emitting diode display device and fabricating method of the same - Google Patents

Abstract

An organic light emitting diode display device is disclosed in the present invention. In the disclosed organic light emitting diode display device and a manufacturing method thereof according to the present invention, the organic light emitting diode display device comprises: an insulating substrate including a plurality of pixel areas; a thin film transistor formed on the insulating substrate; an overcoat layer formed on the thin film transistor; an organic light emitting diode formed on the overcoat layer; a bank pattern formed on the overcoat layer, and defining a light-emitting region and a non light-emitting region; a partition formed on the overcoat layer, and formed in the non light-emitting region; and a thin film encapsulation layer formed on the substrate in which the partition and the organic light emitting diode are formed, and fixed by the partition. In the partition, a cross section of an upper part is larger and wider than a cross section of a lower part. The organic light emitting diode display device and the manufacturing method thereof according to the present invention prevent separation between the substrate and the thin film encapsulation layer by forming the partition in a reverse-tapered shape or an under-cut shape on the substrate, and improve reliability by enhancing adhesive strength between the substrate and the thin film encapsulation layer by using the partition in which the cross section of the upper part is larger and wider than the cross section of the lower part.

Description

[0001] The present invention relates to an organic light emitting diode (OLED) display device and a manufacturing method thereof.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode display, and more particularly, to an organic light emitting diode display for preventing separation of a substrate and a thin film encapsulation layer (TFE).

2. Description of the Related Art Recently, various flat panel display devices capable of reducing weight and volume, which are disadvantages of cathode ray tubes (CRTs), have been developed. Such a flat panel display device includes a liquid crystal display (LCD), a field emission display (FED), a plasma display panel (PDP) And a light emitting device (Electroluminescence Device).

PDP has attracted attention as a display device that is most advantageous for large screen size but small size because of its simple structure and manufacturing process, but it has disadvantage of low luminous efficiency, low luminance and high power consumption. Thin Film Transistor LCD (TFT LCD) is the most widely used flat panel display device, but has a narrow viewing angle and low response speed. The electroluminescence device is divided into an inorganic light emitting diode display device and an organic light emitting diode display device according to the material of the light emitting layer. Of these organic light emitting diode display devices, self light emitting devices are self light emitting devices, There is a big advantage. A basic structure of such an organic light emitting diode display device will be described with reference to FIGS. 1 and 2. FIG.

1 is a cross-sectional view of a conventional organic light emitting diode display.

Referring to FIG. 1, a conventional organic light emitting diode display is divided into a display area and a non-display area, and the display area is divided into a plurality of pixel areas, and a thin film transistor and an organic light emitting diode are formed in each pixel area.

Although not shown in the drawing, gate pads, data pads, power supply pads, and the like are formed.

A semiconductor layer 11 including a source region 11a, a channel region 11b and a drain region 11c, a gate insulating film 12, and a gate electrode (not shown) are formed in a region where a thin film transistor is formed on the insulating substrate 10 13, a source electrode 15 and a drain electrode 16 are formed. The source electrode 15 and the drain electrode 16 are electrically connected to the source region 15 of the semiconductor layer 11 through the interlayer insulating film 14 formed on the gate electrode 13 and the contact hole formed through the gate insulating film 12, (11a) and the drain region (11c).

A protective layer 17 is formed on the source electrode 15 and the drain electrode 16 and a contact hole is formed in the protective layer 17 to expose the drain electrode 16. The exposed drain electrode 16 is electrically connected to the connection electrode 18 formed on the passivation layer 17.

A planarization layer 19 is formed on the entire surface of the substrate 10 including the thin film transistor, and a contact hole through which the connection electrode 18 is exposed is formed in the planarization layer 19. The lower electrode 20 of the organic light emitting diode OLED is formed on the exposed connection electrode 18. A bank pattern 21 exposing the lower electrode 20 in pixel units is formed on the lower electrode 20, and an organic light emitting layer 22 is formed on the exposed lower electrode 20. The upper electrode 23 is formed on the organic light emitting layer 22. A thin film encapsulation (TFE) 24 is formed on the upper electrode 23 to protect and seal display elements from moisture, gas, and the like.

2 is a plan view illustrating a conventional organic light emitting diode display.

Referring to FIG. 2, the thin film encapsulation layer 24 is formed on the substrate 10 including the periphery of the display area 30 including the thin film transistor and the organic light emitting diode. As shown in FIG. 1, the thin film encapsulation layer 24 formed on the organic light emitting diode has a weak adhesive force with the organic light emitting diode and is easily peeled off. Accordingly, the substrate 10 and the thin film encapsulation layer 24 are fixed by the adhesive force between the peripheral portion of the display area 30 and the thin film encapsulation layer 24, but as shown in FIG.

SUMMARY OF THE INVENTION An object of the present invention is to provide an organic light emitting diode display device and a method of manufacturing the same, which prevent a peeling between a thin film encapsulation layer and a substrate by forming a partition wall in a reverse taper shape or an under-cut shape on a substrate.

In addition, another object of the present invention is to provide an organic light emitting diode display device having improved reliability and a method of manufacturing the same, by enhancing adhesion between the thin film encapsulation layer and the substrate due to a partition formed at a larger cross section than the lower one.

The organic light emitting diode display device of the present invention for solving the above problems of the prior art comprises: an insulating substrate including a plurality of pixel areas; A thin film transistor formed on the insulating substrate; A planarization film formed on the thin film transistor; An organic light emitting diode formed on the planarization layer; A bank pattern formed on the planarization film and defining a light emitting area and a non-light emitting area; Barrier ribs formed on the planarization layer and formed in the non-light emitting region; The barrier rib is formed on the substrate on which the barrier rib and the organic light emitting diode are formed, and includes a thin film encapsulation layer fixed by the barrier rib, wherein the barrier rib is formed to have a larger cross section than the lower cross section.

In addition, the organic light emitting diode display device manufacturing method of the present invention comprises the steps of: forming a thin film transistor on an insulating substrate including a plurality of pixel regions; Forming a planarization film on the thin film transistor; Forming an organic light emitting diode lower electrode on the planarization layer; Forming a partition on the planarization layer to be spaced apart from the lower electrode of the organic light emitting diode; Forming a bank pattern on the planarization layer and exposing the barrier rib and the organic light emitting diode lower electrode; Forming an organic light emitting layer and an organic light emitting diode upper electrode on the exposed organic light emitting diode lower electrode to complete the organic light emitting diode; And forming a thin film encapsulation layer on the substrate on which the barrier ribs and the organic light emitting diode are formed, wherein the barrier ribs are formed to have a larger cross section than the lower cross section. .

An organic light emitting diode display and a method of manufacturing the same according to the present invention have a first effect of preventing the thin film encapsulation layer and the substrate from being separated by forming a partition wall in a reverse taper shape or an under-cut shape on the substrate.

In addition, the organic light emitting diode display and the method of manufacturing the same according to the present invention have a second effect of improving reliability by strengthening the adhesion between the thin film encapsulation layer and the substrate due to the partition wall having a larger cross section than the lower cross section.

1 is a cross-sectional view of a conventional organic light emitting diode display.
2 is a plan view illustrating a conventional organic light emitting diode display.
3A to 3G illustrate a method of manufacturing an organic light emitting diode display device according to a first embodiment of the present invention.
4A to 4D illustrate a method of manufacturing an organic light emitting diode display according to a second exemplary embodiment of the present invention.
5 is a diagram illustrating an organic light emitting diode display device according to a third exemplary embodiment of the present invention.
6A and 6B illustrate the results of peeling phenomenon of the thin film encapsulation layer of the organic light emitting diode display and the organic light emitting diode display of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention can be fully conveyed to those skilled in the art. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

3A to 3G illustrate a method of manufacturing an organic light emitting diode display device according to a first embodiment of the present invention.

Referring to FIG. 3A, an organic light emitting diode display device according to an exemplary embodiment of the present invention includes a display area partitioned into a plurality of pixel areas, and includes amorphous silicon on an insulating substrate 100 formed of glass, plastic, polyimide (PI), or the like. A semiconductor layer such as a film is formed. Although not shown, a buffer layer may be formed between the semiconductor layer 111 and the insulating substrate 100. The buffer layer may be formed as a single layer or a stacked structure using an insulating film such as a silicon oxide film or a silicon nitride film, and may be configured to prevent diffusion of moisture or impurities generated in the substrate 100 or to control heat transfer rate during crystallization. In this case, the crystallization of the amorphous silicon layer can be performed well.

A photoresist is formed on the semiconductor layer, and a photoresist pattern is formed by performing exposure and development using a mask including a transmission portion and a blocking portion. The semiconductor layer is etched using the photoresist pattern as a mask to form the semiconductor layer 111 of the thin film transistor. A gate insulating layer 112 is formed on the entire surface of the substrate 100 including the semiconductor layer 111, and a gate metal layer is formed on the gate insulating layer 112. A photoresist is formed on the gate metal layer, and a photoresist pattern is formed by performing an exposure and development process using a mask formed of a transmissive portion and a blocking portion, and the gate metal layer is etched using the mask to form a gate electrode 113. do. The gate electrode 113 may be formed of a metal such as molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W), copper (Cu), chromium (Cr), aluminum It may be formed by laminating at least one of ITO, IZO and ITZO which are transparent conductive materials. In the drawing, the gate electrode 113 is formed of a single metal layer, but since it is not fixed, it may be formed by stacking two or more metal layers.

The source electrode 111a and the drain region 111c are formed by doping a high concentration of impurity ions using the gate electrode 113 as a mask. Although not shown in the drawing, the dopant ions of low concentration are doped before forming the source region 111a and the drain region 111c so as to reduce the electric field applied to the junction due to the resistance to reduce the off current and minimize the decrease of the on current. A lightly doped drain (LDD) doped layer may be formed in the source region 111a and the drain region 111c of the semiconductor layer 111. Although not shown in the drawings, the unillustrated 111b is a channel region.

The impurity ions may be formed of n-type impurity ions using phosphorus (P) or the like and p-type impurity ions using boron (B).

Referring to FIG. 3B, an interlayer insulating layer 114 is formed on the entire surface of the substrate on which the gate electrode 113 is formed. A photoresist is formed on the interlayer insulating layer 114, and a photoresist pattern is formed by an exposure and development process using a mask formed of a transmissive portion and a blocking portion. The interlayer insulating layer 114 and the gate insulating layer 112 are etched using the photoresist pattern as a mask to form a contact hole exposing the source region 111a and the drain region 111c of the semiconductor layer 111. . A source / drain metal layer is formed on the entire surface of the substrate 100 including the interlayer insulating layer 114 on which the contact hole is formed, and a photoresist pattern is formed by an exposure and development process using a mask formed of a transmissive part and a blocking part. The source / drain metal layer is etched using the photoresist pattern as a mask to form a source electrode 115 and a drain electrode 116. The source electrode 115 is formed on the source region 111a of the semiconductor layer 111 through the contact hole, and the drain electrode 116 is the drain region of the semiconductor layer 111 through the contact hole. It is formed on 111c.

The source electrode and the drain electrode may be formed of an alloy of molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W), copper (Cu), chromium (Cr), aluminum (Al) It can be formed using any one of them. In addition, a transparent conductive material such as indium tin oxide (ITO) may be used. In the drawings, a single metal layer is formed, but in some cases, at least two or more metal layers may be stacked.

Referring to FIG. 3C, a protective layer 117 is formed on the entire surface of the substrate 100 on which the source electrode 115 and the drain electrode 116 are formed, and a photoresist is formed on the protective layer 117. A contact hole for forming a photoresist pattern through an exposure and development process using a mask including a transmissive part and a blocking part, and exposing the drain electrode 116 by etching the protective layer 117 using the photoresist pattern as a mask. Form. A metal layer is formed on the protective layer 117 on which the contact hole is formed. A photoresist is formed using a mask comprising a transmissive part and a blocking part, and a photoresist pattern is formed through an exposure and development process, and the metal layer is etched using the photoresist pattern as a mask to connect with the drain electrode 116. Electrode 118 is formed.

A planarization layer 119 is formed on the connection electrode 118, a photoresist is formed on the planarization layer 119, and a photoresist pattern is formed by an exposure and development process using a mask formed of a transmissive part and a blocking part. The photoresist pattern is etched to form a contact hole for exposing the connection electrode 118 to the planarization layer 119. The organic light emitting diode lower electrode 120 is formed on the exposed connection electrode 118 by a photoresist process using a mask formed of a transmission part and a blocking part.

Referring to FIG. 3D, a negative photoresist, a photosensitive material, is formed on the planarization layer 119. In this case, the negative photoresist is a photosensitive material which is a material that is cured when light is irradiated. Then, a mask made of a blocking part and a transmitting part is put on the negative photoresist and irradiated with light. Subsequently, when the ashing process is performed, an inverse tapered partition wall 150 is formed between the pixel region and the adjacent pixel region on the planarization layer 119.

Referring to FIG. 3E, a positive photoresist, a photosensitive material, is formed on the substrate 100 on which the reverse tapered partition wall 150 is formed. In this case, the positive photoresist is a photosensitive material which is a material that is softened when light is irradiated. Then, a mask comprising a blocking part and a transmitting part is put on the positive photoresist and irradiated with light. Subsequently, when the ashing process is performed, a bank pattern 121 formed on the planarization layer 119 to expose the reverse tapered partition wall 150 and the organic light emitting diode lower electrode 120 is exposed. Form.

The bank pattern 121 defines a light emitting area and a non-light emitting area of the pixel area, an area in which the organic light emitting diode is exposed is a light emitting area, and other areas are divided into non-light emitting areas.

In the drawing, the inverted tapered partition wall 150 is formed and the bank pattern 121 is formed, but the bank pattern 121 may be formed first, and the partition wall 150 may be formed.

Referring to FIG. 3F, the organic light emitting layer 122 and the organic light emitting diode upper electrode 123 are formed on the bank pattern 121 and the exposed organic light emitting diode upper electrode 120.

The organic light emitting layer 122 may be composed of a single layer made of a light emitting material, and in order to increase the light emitting efficiency, a hole injection layer hole injection layer, a hole transporting layer hole transporting layer, a light emitting material layer It may be composed of multiple layers of a light emitting material layer, an electron transporting film electron transporting layer, and an electron injection layer.

The organic light emitting diode may be driven by an upper emission method in which light emitted from the organic emission layer 122 is emitted toward the upper electrode 123. In this case, when a predetermined voltage is applied to the lower electrode 120 and the upper electrode 123 according to the selected color signal, holes provided from the lower electrode 120 and electrons injected from the upper electrode 123 are applied. The organic light emitting layer 122 is transported to form an exciton, and when the exciton transitions from an excited state to a ground state, light is generated and emitted in the form of visible light. The emitted light passes through the transparent upper electrode 123 and exits to the outside. In this case, the upper electrode 123 may be used by thickly depositing a transparent conductive material on a translucent metal film in which a thin metal material having a low work function is deposited.

Referring to FIG. 3G, a thin film encapsulation (TFE) 124 is formed in an area including a display area of the substrate 100 on which the organic light emitting diode is formed. The thin film encapsulation layer 124 seals the display elements to protect them from moisture and gas. The thin film encapsulation layer 124 and the substrate 100 may be strengthened by the barrier rib 150 formed in a reverse taper shape and prevent peeling.

In the conventional barrier rib structure, the width of the lower region in contact with the planarization film is wider than that of the upper region, so that the thin film encapsulation layer 124 can be easily peeled from the substrate 100. However, since the partition wall 150 of the present invention is formed in a reverse taper structure having a narrow width of the lower region and a wide width of the upper region, the partition 150 prevents separation of the thin film encapsulation layer 124. It can play a role. In addition, when the barrier rib 150 and the bank pattern 121 are formed to be spaced apart from each other in the same layer, a wide groove of a lower region is formed between the barrier rib 150 and the bank pattern 121. The thin film encapsulation layer 124 may be formed on a substrate including the groove and fixed by the groove.

This improves the reliability of the organic light emitting diode display device of the present invention.

4A to 4B illustrate a method of manufacturing an organic light emitting diode display according to a second exemplary embodiment of the present invention.

All components except the partition wall and the bank pattern structure are the same as the first embodiment described above, and the same reference numerals are assigned to the same components as the first embodiment, and only the partition wall and the bank pattern structure having the difference point are described in the first embodiment. And other reference numerals.

The most distinctive feature of the organic light emitting diode display according to the second exemplary embodiment of the present invention is that the partition wall has a double layer structure of the sacrificial pattern 250 and the bank pattern 221.

Referring to FIG. 4A, a sacrificial layer is formed on the substrate 100 on which the organic light emitting diode lower electrode 120 is formed. A photoresist is formed on the sacrificial layer, and a photoresist pattern is formed by an exposure and development process using a mask formed of a transmissive portion and a blocking portion. The sacrificial pattern 250 is formed between the pixel region and the adjacent pixel region on the planarization layer 119 by etching the photoresist pattern as a mask.

Referring to FIG. 4B, a positive photoresist, a photosensitive material, is formed on the substrate 100 on which the sacrificial pattern 250 is formed and the sacrificial pattern 250. In this case, the positive photoresist is a photosensitive material which is a material that is softened when light is irradiated. In addition, a mask including a blocking part and a transmitting part is covered on the positive photoresist, and light is irradiated to a peripheral portion of the sacrificial pattern 250 and a portion of the lower electrode 120. Thereafter, an ashing process is performed to form a bank pattern 221 formed to expose the side surface of the sacrificial pattern 250 and the organic light emitting diode lower electrode 120.

Referring to FIG. 4C, the exposed sacrificial pattern 250 is wet-etched using the bank pattern 221 as a mask. In this case, due to the isotropic characteristics of the wet etching, the bank pattern 221 and the sacrificial pattern 250 have a larger etching selectivity with respect to the wet etching. A barrier rib having an undercut structure in which the pattern 221 is formed larger than the sacrificial pattern 250 may be formed. As a result, a partition wall having an upper cross section larger than a lower cross section similar to the reverse tapered shape may be formed between the pixel region and the adjacent pixel region on the planarization layer 119.

The bank pattern 221 defines a light emitting area and a non-light emitting area of the pixel area, an area in which the organic light emitting diode is exposed is a light emitting area, and other areas are divided into non-light emitting areas.

Referring to FIG. 4D, the organic light emitting layer 122 and the organic light emitting diode upper electrode 123 are formed on the bank pattern 221 and the exposed organic light emitting diode upper electrode 120. The organic light emitting layer 122 may be composed of a single layer made of a light emitting material, and in order to increase the light emitting efficiency, a hole injection layer hole injection layer, a hole transporting layer hole transporting layer, a light emitting material layer It may be composed of multiple layers of a light emitting material layer, an electron transporting film electron transporting layer, and an electron injection layer.

A thin film encapsulation (TFE) 124 is formed in an area including a display area of the substrate 100 on which the organic light emitting diode is formed. The thin film encapsulation layer 124 seals the display elements to protect them from moisture, gas, and the like, and enhances adhesion and prevents peeling by partition walls formed of a double layer of the sacrificial pattern 250 and the bank pattern 221 in an undercut form. Can be.

In the conventional barrier rib structure, the width of the lower region in contact with the planarization layer is wider than that of the upper region, so that the thin film encapsulation layer 124 is easily peeled from the substrate 100. However, the barrier rib of the present invention is a sacrificial pattern that is a lower layer in contact with the planarization layer. Since the width 250 is narrower than the upper bank layer 221 and the upper layer is formed in an undercut shape wider than the lower layer, the thin film encapsulation layer 124 is prevented from being separated.

In addition, when the partition wall formed in the undercut shape and the bank pattern 221 are separated from each other in the same layer, a wide groove in the lower region is formed between the partition wall and the bank pattern 221. The thin film encapsulation layer 124 may be formed on a substrate including the groove and fixed by the groove.

This improves the reliability of the organic light emitting diode display device of the present invention.

5 is a diagram illustrating an organic light emitting diode display device according to a third exemplary embodiment of the present invention.

All components except for the bank pattern structure are the same as the first embodiment described above, and therefore, the same components are denoted with the same reference numerals as the first embodiment, and the only reference numerals different from the first embodiment only for the bank pattern structure having the difference. Was given.

In the organic light emitting diode display according to the third embodiment of the present invention, the most distinctive feature is that the bank pattern 321 is formed in an uneven structure.

Referring to FIG. 5, a positive photoresist, a photosensitive material, is formed on the substrate 100 on which the reverse tapered partition wall 150 is formed. In this case, the positive photoresist is a photosensitive material which is a material that is softened when light is irradiated.

Then, a halftone mask including a blocking part, a transmitting part, and a semi-transmissive part is covered on the positive photoresist and irradiated with light. The halftone mask may be formed as a diffraction mask.

The transmissive part transmits light as it is, the transflective part transmits less light than the transmissive part by using a transflective material having different transmittances, and the blocking part completely blocks the light.

Accordingly, the positive photoresist is irradiated and softened by light to face the transmissive portion of the halftone mask in the region where the barrier 150 is formed and the region where the organic light emitting diode lower electrode 120 is exposed. The area is opposite to the mask formed by alternating the transflective portion and the blocking portion. Subsequently, when an ashing process is performed, an inverse tapered partition wall 150 and the organic light emitting diode lower electrode 120 are exposed on the planarization layer 119, and the bank has a concave-convex structure having recesses and convex portions. Pattern 321 is formed. Although the process of forming the reverse tapered partition wall 150 and forming the bank pattern 321 has been described, the bank pattern 321 may be formed first, and the partition wall 150 may be formed.

The organic light emitting layer 122 and the organic light emitting diode upper electrode 123 are formed on the bank pattern 321 and the exposed organic light emitting diode upper electrode 120. The organic light emitting layer 122 may be composed of a single layer made of a light emitting material, and in order to increase the light emitting efficiency, a hole injection layer hole injection layer, a hole transporting layer hole transporting layer, a light emitting material layer It may be composed of multiple layers of a light emitting material layer, an electron transporting film electron transporting layer, and an electron injection layer.

A thin film encapsulation (TFE) 124 is formed in an area including a display area of the substrate 100 on which the organic light emitting diode is formed. The thin film encapsulation layer 124 seals the display elements to protect them from moisture, gas, and the like, and enhances adhesion by partition walls formed in an inverse taper shape. According to the third embodiment of the present invention, the thin film is encapsulated due to the concave-convex pattern of the bank pattern 321 as well as the partition wall 150 having the narrow width of the lower region in contact with the planarization film and the large width of the upper region. The contact surface between the layer 124 and the bank pattern 321 may be increased to further enhance adhesion. Accordingly, the organic light emitting diode display device may be formed to prevent peeling of the thin film encapsulation layer 124 and improve reliability.

6A and 6B illustrate the results of peeling phenomenon of the thin film encapsulation layer of the organic light emitting diode display and the organic light emitting diode display of the present invention.

Referring to FIG. 6A, in the conventional organic light emitting diode display device, the thin film encapsulation layer is formed by deposition after forming the organic light emitting diode, but the adhesion between the thin film encapsulation layer and the organic light emitting diode is weak and peeling and peeling phenomenon occurs. As a result, the organic light emitting diode and other display elements are not sealed from moisture, gas, etc., and the reliability of the panel is lowered.

Referring to FIG. 6B, in the organic light emitting diode display device of the present invention, a partition wall having an upper end portion having an inverted taper shape and the like larger than the lower end portion supports the substrate and the thin film encapsulation layer, thereby adhering the adhesive force between the substrate and the thin film encapsulation layer. This reinforcement prevents peeling and peeling phenomenon.

Accordingly, the organic light emitting diode display and the method of manufacturing the same according to the present invention prevent the peeling of the thin film encapsulation layer and the substrate by forming a partition wall in a reverse taper shape or under-cut form on the substrate, Reliability is improved by strengthening the adhesive force of the substrate.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

100: insulating substrate 111: semiconductor layer
112: gate insulating film 113: gate electrode
114: interlayer insulating film 115: source electrode
116: drain electrode 117: protective layer
118: connecting electrode 119: planarization film
120: lower electrode 121,221,321: bank pattern
122: organic light emitting layer 123: upper electrode
124: thin film encapsulation layer 150: partition wall
250: sacrificial pattern

Claims (17)

An insulating substrate including a plurality of pixel regions;
A thin film transistor formed on the insulating substrate;
A planarization film formed on the thin film transistor;
An organic light emitting diode formed on the planarization layer;
A bank pattern formed on the planarization film and defining a light emitting area and a non-light emitting area;
Barrier ribs formed on the planarization layer and formed in the non-light emitting region;
A thin film encapsulation layer formed on the substrate on which the barrier ribs and the organic light emitting diode are formed, and fixed by the barrier ribs,
The barrier rib has an organic light emitting diode display device, characterized in that the cross section of the upper portion is larger than the cross section of the lower portion.
The method of claim 1,
And the partition wall is formed in an inverted taper shape.
3. The method of claim 2,
The reverse tapered partition wall is formed of a negative photoresist, an organic light emitting diode display device.
The method of claim 1,
And the partition wall has an undercut shape and is formed as a double layer of a lower layer and an upper layer.
5. The method of claim 4,
And an upper layer of the barrier rib formed of a positive photoresist.
5. The method of claim 4,
And an upper layer of the barrier rib formed of the same material as the bank pattern.
The method of claim 1,
The bank pattern is formed of an uneven structure,
The thin film encapsulation layer is fixed by the bank pattern and the partition wall.
The method of claim 1,
The thin film transistor and the organic light emitting diode are formed in the pixel region,
And the partition wall is formed between adjacent pixel regions.
The method of claim 1,
The partition wall is formed on the same layer as the bank pattern,
And the barrier rib is formed to be spaced apart from the bank pattern and the organic light emitting diode.
Forming a thin film transistor on an insulating substrate including a plurality of pixel regions;
Forming a planarization film on the thin film transistor;
Forming an organic light emitting diode lower electrode on the planarization layer;
Forming a partition on the planarization layer to be spaced apart from the lower electrode of the organic light emitting diode;
Forming a bank pattern on the planarization layer and exposing the barrier rib and the organic light emitting diode lower electrode;
Forming an organic light emitting layer and an organic light emitting diode upper electrode on the exposed organic light emitting diode lower electrode to complete the organic light emitting diode;
Forming a thin film encapsulation layer on the substrate on which the barrier ribs and the organic light emitting diode are formed, and fixed by the barrier ribs;
The partition wall has a cross-section of the upper portion is larger than the cross section of the lower portion of the organic light emitting diode display device manufacturing method.
11. The method of claim 10,
The partition wall is formed in an inverted tapered shape, the organic light emitting diode display device manufacturing method.
The method of claim 11,
Forming the reverse tapered partition wall,
Forming a negative photoresist;
Irradiating light onto the partition formation region using a mask comprising a transmissive portion and a blocking portion;
A method of manufacturing an organic light emitting diode display device comprising the step of completing a partition wall through a developing process.
11. The method of claim 10,
The barrier rib is formed in an undercut shape as a double layer of a lower layer and an upper layer.
The method of claim 13,
Forming a partition formed of the double layer,
Forming a sacrificial layer on the planarization layer;
Forming a sacrificial pattern as a lower layer in the barrier rib forming region by a photoresist process;
Forming a positive photoresist on the substrate including the sacrificial pattern;
Irradiating light to the periphery of the sacrificial pattern using a mask comprising a transmissive portion and a blocking portion;
Exposing a side surface of the sacrificial pattern through a developing process and forming an upper layer formed of a positive photoresist;
A method of manufacturing an organic light emitting diode display device, the method comprising etching the lower layer more than the upper layer through an etching process to complete the partition wall with a double layer having an undercut shape.
15. The method of claim 14,
The forming of the upper layer of the partition wall is performed in the same process as the step of forming a bank pattern, characterized in that the organic light emitting diode display device manufacturing method.
11. The method of claim 10,
The bank pattern has a concave-convex structure, characterized in that the organic light emitting diode display device manufacturing method.
11. The method of claim 10,
The thin film transistor and the organic light emitting diode are formed in the pixel region,
And wherein the barrier rib is formed between adjacent pixel regions.

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