KR101899878B1 - Organic light emitting diode display device and fabricating method of the same - Google Patents

Abstract

The present invention discloses an organic light emitting diode display device. The organic light emitting diode display device and the method of manufacturing the same according to the present invention include a buffer layer formed on an insulating substrate; A thin film transistor formed on the buffer layer, a connection electrode, a capacitor, a power supply, and a pad; An organic light emitting diode formed between the thin film transistor and the capacitor and the organic layer; A semiconductor layer including a source region, a channel region, and a drain region formed on the buffer layer, which constitutes the thin film transistor; a gate insulating film; a gate electrode; a source electrode connected to a source region and a drain region of the semiconductor layer; And a drain electrode; An interlayer insulating film formed between the first, second, and third electrodes of the capacitor, the gate insulating film formed between the first and second electrodes, and the second and third electrodes; A power supply wiring and a power supply contact part, which are formed on the interlayer insulating film and constitute the power supply part; A pad contact portion formed to surround the pad portion on the pad portion; And a lower electrode, an organic light emitting layer, and an upper electrode constituting the organic light emitting diode, wherein the connection electrode is formed on the gate insulating film, the drain electrode of the thin film transistor is electrically connected to the connection electrode, And the organic light emitting diode and the connection electrode are electrically connected to each other by the contact contact portion and the contact metal layer.
The organic light emitting diode display device and the method of manufacturing the same according to the present invention are characterized in that a gate electrode, a connection electrode and a capacitor second electrode are formed on a gate insulating film using a first halftone mask, and a second halftone mask is used to form a contact metal layer An organic light emitting diode lower electrode, a power source contact portion, and a pad contact portion, thereby simplifying the process without reducing the reflection efficiency, and a method of manufacturing the same. In addition, the present invention has the effect of stabilizing the process without forming the pad contact portion in the pad portion, so that the pad portion is not corroded.

Description

[0001] The present invention relates to an organic light emitting diode (OLED) display device and a manufacturing method thereof.

[0001] The present invention relates to an organic light emitting diode display, and more particularly, to an organic light emitting diode display device in which a connection electrode is formed under an interlayer insulating film and a halftone mask is used to simplify the process by omitting a protective film.

2. Description of the Related Art Recently, various flat panel display devices capable of reducing weight and volume, which are disadvantages of cathode ray tubes (CRTs), have been developed. Such a flat panel display device includes a liquid crystal display (LCD), a field emission display (FED), a plasma display panel (PDP) And a light emitting device (Electroluminescence Device).

PDP has attracted attention as a display device that is most advantageous for large screen size but small size because of its simple structure and manufacturing process, but it has disadvantage of low luminous efficiency, low luminance and high power consumption. Thin Film Transistor LCD (TFT LCD) is the most widely used flat panel display device, but has a narrow viewing angle and low response speed. The electroluminescence device is divided into an inorganic light emitting diode display device and an organic light emitting diode display device according to the material of the light emitting layer. Of these organic light emitting diode display devices, self light emitting devices are self light emitting devices, There is a big advantage. A basic structure of such an organic light emitting diode display device will be described with reference to FIG.

1 is a view illustrating a conventional OLED display.

Referring to FIG. 1, a conventional OLED display is divided into a display region and a pad region. The display region is divided into a plurality of pixel regions, and a thin film transistor, a capacitor, and an organic light emitting diode are formed in each pixel region .

In addition, a gate pad, a data pad, and a power supply pad are formed in the pad region.

A buffer layer 11 is formed on the insulating substrate 10 and a source region 12a, a channel region 12b and a drain region 12c are formed on the buffer layer 11 in a region where the thin film transistor is formed A gate insulating film 14, a gate electrode 15, a source electrode 19a and a drain electrode 19b are formed. The source electrode 19a and the drain electrode 19b are connected to the source region 12a and the drain region 12c of the semiconductor layer 12, respectively. The capacitor region is formed of a capacitor first electrode 13, an interlayer insulating film 16, a capacitor second electrode 17, a passivation layer 20 and a capacitor third electrode 22, 18 and a power contact portion 24, respectively.

A protective layer 20 is formed on the source electrode 19a, the drain electrode 19b, the capacitor second electrode 17 and the power source pad 18. The drain electrode 19b and the drain electrode 19b are formed on the protective layer 20, A contact hole through which the power supply pad 18 is exposed is formed. A connection electrode 21 is formed on the exposed drain electrode 19b and a power contact part 24 is formed on the exposed power supply pad 18. [

An organic layer 23 is formed on the entire surface of the substrate 10 including the display area and the pad area and the organic layer 23 is formed with a contact hole through which the connection electrode 21 is exposed. A lower electrode 25 of the organic light emitting diode OLED is formed on the exposed connection electrode 21. A barrier rib layer 26 is formed on the lower electrode 25 to expose the lower electrode 25 in units of pixel regions and an organic light emitting layer 27 is formed on the exposed lower electrode 25, An upper electrode 28 is formed on the entire surface of the substrate 10 including the organic light emitting layer 27.

A conventional method of manufacturing an organic light emitting diode display device includes: forming a semiconductor layer 12 on a buffer layer 11; Forming a gate electrode (15) and a capacitor first electrode (13) on the gate insulating film (14); Forming a contact hole on the interlayer insulating film (16) to be connected to the source region (12a) or the drain region (12b) of the semiconductor layer; Forming a source electrode 19a, a drain electrode 19b, a capacitor second electrode 17, and a power supply pad 18 on the interlayer insulating film 16; Forming a contact hole to be connected to the drain electrode (19b) on the protection layer (20); Forming a connection electrode (21), a capacitor third electrode (22), and a power contact portion (24) on the protection layer (20); Forming a contact hole on the organic layer (23) to be connected to the connection electrode (21); Forming an organic light emitting diode lower electrode (25) on the organic layer (23); And forming a barrier rib layer 26 on the organic light emitting diode lower electrode 25. That is, a total of 9 mask processes are required, and conventional organic light emitting diode display devices have a problem of a large number of manufacturing processes.

In such a case, there is a limitation in cost reduction due to a complicated manufacturing process, and therefore, a method of simplifying the manufacturing process and reducing manufacturing cost is required.

An organic light emitting diode display device which simplifies a process by forming a gate electrode, a connection electrode and a capacitor second electrode using a halftone mask on a gate insulating film and omitting a protective layer on the surface of the interlayer insulating film, The purpose is to provide.

In addition, the present invention provides an organic light emitting diode display device and a method of manufacturing the same that simplify the process without reducing the reflection efficiency by forming a contact metal layer, an organic light emitting diode lower electrode, a power contact portion, and a pad contact portion using a halftone mask, There is a purpose.

It is another object of the present invention to provide an organic light emitting diode display device and a method of manufacturing the same that can form a pad contact portion in a pad portion so that the pad portion is not corroded and stabilize the process.

According to an aspect of the present invention, there is provided an organic light emitting diode display comprising: a buffer layer formed on an insulating substrate; A thin film transistor formed on the buffer layer, a connection electrode, a capacitor, a power supply, and a pad; An organic light emitting diode formed between the thin film transistor and the capacitor and the organic layer; A semiconductor layer including a source region, a channel region, and a drain region formed on the buffer layer, which constitutes the thin film transistor; a gate insulating film; a gate electrode; a source electrode connected to a source region and a drain region of the semiconductor layer; And a drain electrode; An interlayer insulating film formed between the first, second, and third electrodes of the capacitor, the gate insulating film formed between the first and second electrodes, and the second and third electrodes; A power supply wiring and a power supply contact part, which are formed on the interlayer insulating film and constitute the power supply part; A pad contact portion formed to surround the pad portion on the pad portion; And a lower electrode, an organic light emitting layer, and an upper electrode constituting the organic light emitting diode, wherein the connection electrode is formed on the gate insulating film, the drain electrode of the thin film transistor is electrically connected to the connection electrode, And the organic light emitting diode and the connection electrode are electrically connected to each other by the contact contact portion and the contact metal layer.

According to another aspect of the present invention, there is provided a method of manufacturing an organic light emitting diode display device, including: forming a buffer layer on an insulating substrate; Forming a semiconductor layer and a capacitor first electrode on the buffer layer; Forming a gate insulating film on the substrate including the semiconductor layer and the capacitor first electrode; Forming a gate electrode, a connection electrode and a capacitor second electrode on the gate insulating film; Forming a source region and a drain region in the semiconductor layers below both sides of the gate electrode; Forming an interlayer insulating film on the gate electrode, the connection electrode, and the capacitor second electrode; Forming a plurality of contact holes for exposing source regions, drain regions, and connection electrodes of the semiconductor layer to the interlayer insulating layer through an etching process; A source electrode connected to the source region of the semiconductor layer through the plurality of contact holes, a drain electrode connected to the drain region and the connection electrode of the semiconductor layer, and a connection contact connected to the connection electrode; Forming a capacitor third electrode, a power supply wiring, and a pad portion on the interlayer insulating film; Forming an organic layer on the substrate including the source electrode, the drain electrode, the connection contact, the capacitor third electrode, and the power supply wiring; Forming first and second contact holes exposing the connection contact portion and the electrode wiring to the organic layer through an etching process; A contact metal layer connected to the connection contact portion through the first contact hole and a lower electrode of the organic light emitting diode are formed and a power contact portion connected to the power supply wiring through the second contact hole is formed, Forming a pad contact portion; Forming an organic light emitting layer on the lower electrode of the organic light emitting diode; And forming an organic light emitting diode upper electrode on the organic light emitting layer.

The organic light emitting diode display device and the method of manufacturing the same according to the present invention are characterized in that a gate electrode, a connection electrode and a capacitor second electrode are formed on a gate insulating film using a halftone mask, and a protective layer is omitted on the upper surface of the interlayer insulating film, There is a first effect.

In addition, the organic light emitting diode display device and the method of manufacturing the same according to the present invention may include a contact metal layer, an organic light emitting diode lower electrode, a power contact portion, and a pad contact portion using a halftone mask, There are two effects.

In addition, the organic light emitting diode display device and the method of manufacturing the same according to the present invention have the third effect that the pad contact portion is formed in the pad portion so that the pad portion is not corroded and the process is stabilized.

1 is a view illustrating a conventional OLED display.
2A to 2H are views illustrating a method of manufacturing an organic light emitting diode display device according to the present invention.
3A to 3D are views showing a method of manufacturing a gate electrode, a connection electrode, and a capacitor second electrode in the organic light emitting diode display device of the present invention.
FIGS. 4A to 4D illustrate a method of manufacturing a contact metal layer, an organic light emitting diode lower electrode, a power contact portion, and a pad contact portion of the organic light emitting diode display of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

2A to 2H are views illustrating a manufacturing process of the organic light emitting diode display device of the present invention.

Referring to FIG. 2A, the organic light emitting diode display of the present invention includes a buffer layer 110 formed on an insulating substrate 100 including a display region and a pad region. The display area is divided into a light emitting area and a non-light emitting area for displaying an image, and the pad area is an area formed with pad parts receiving a signal from an external system.

The substrate 100 may be formed of glass, plastic, polyimide (PI), or the like. The buffer layer 110 may be formed of a single layer or a stacked structure using an insulating layer such as a silicon oxide layer or a silicon nitride layer . At this time, the buffer layer 110 serves to prevent the diffusion of moisture or impurities generated in the substrate 100, and to control the transfer rate of heat when crystallizing the amorphous silicon layer so that crystallization of the amorphous silicon layer can be performed well.

As described above, when the buffer layer 110 is formed on the substrate 100, a semiconductor layer such as an amorphous silicon layer is formed, and then a photoresist is formed on the semiconductor layer. Then, a photoresist pattern is formed by performing exposure and development processes using a first mask made up of a transmissive portion and a shielding portion. The semiconductor layer is etched using the photoresist pattern as a mask to form the semiconductor layer 112 of the thin film transistor and the capacitor first electrode 113.

Referring to FIG. 2B, a gate insulating layer 114 and a metal layer are sequentially formed on the entire surface of the substrate 100 including the semiconductor layer 112 and the capacitor first electrode 113, A gate electrode Gate, a connection electrode Con, and a capacitor second electrode 115c are formed on the gate electrode 114, as shown in FIG. Hereinafter, this will be described in detail with reference to Figs. 3A to 3D.

3A to 3D are views showing a method of manufacturing a gate electrode, a connection electrode, and a capacitor second electrode in the organic light emitting diode display device of the present invention.

Referring to FIG. 3A, an ITO layer 115 and a metal layer 116 are formed on a substrate 100 on which the gate insulating layer 114 is formed. The metal layer 116 may be formed of a metal such as AlNd, Mo, Ti, Ta, W, Cu, Cr, Al, Can be formed using an alloy formed from a combination.

Referring to FIG. 3B, the photoresist patterns 300a, 300b, and 300c having a step on the ITO layer 115 and the metal layer 116 are formed by photolithography using the first halftone mask 150. The first halftone mask 150 may be formed as a diffraction mask.

Specifically, a negative photo resist, which is a photosensitive material, is formed on the ITO layer 115 and the metal layer 116. However, the process may be carried out using a positive photoresist.

At this time, the negative photoresist is a photosensitive material which is cured when light is irradiated. Then, a first halftone mask 150 is placed on the negative photoresist and light is irradiated. The first halftone mask 150 comprises a shielding portion A, a transmitting portion B and a semi-transmitting portion c. The transmitting portion B transmits light as it is and the semi- Transmissive material having a different transmittance is used to pass less light than the transmissive portion (B), and the blocking portion (A) completely blocks the light.

Accordingly, the negative photoresist, which is opposite to the transmissive portion B of the first halftone mask 150, is irradiated and cured by the light to form the first photoresist patterns 300a and 300b having a high level difference in the gate electrode and the connection electrode region, And the negative photoresist on the capacitor second electrode region facing the semi-transparent portion C is semi-cured by the light passing through the semi-transparent portion C, so that the second photoresist pattern 300c having a low step is formed, . The negative photoresist opposite to the blocking portion A of the first halftone mask 150 is removed to expose the metal layer 116.

Referring to FIG. 3C, the exposed metal layer 116 and the ITO layer 115 are patterned by etching using the first and second photoresist patterns 300a, 300b, and 300c as a mask.

In the patterning process, the gate electrode Gate is composed of the first ITO layer 115a and the first metal layer 116a and the connection electrode Con is composed of the second ITO layer 115b and the second metal layer 116b And a third ITO layer 115c and a third metal layer 116c functioning as a capacitor second electrode 115c are formed in a region where the capacitor electrode is formed.

Referring to FIG. 3D, when the ashing process is performed on the first and second photoresist patterns 300a, 300b and 300c, a second photoresist pattern The third metal layer 116c is removed and the first photoresist patterns 300a and 300b on the gate electrode and the connecting electrode region are left.

When the third metal layer 116c is etched, a capacitor second electrode 115c is formed. Thereafter, when the remaining photoresist patterns 300a and 300b are removed, a gate electrode and a connection electrode Con are formed.

Using the gate electrode Gate as a mask, a high concentration impurity ion is doped to form a source region 112a and a drain region 112e. A lightly doped ion is doped into the source region 112a and the drain region 112e of the semiconductor layer 112 to form an LDD (Lightly Doped Drain) doping layer 112a before the source region 112a and the drain region 112e are formed, The source region 112a and the drain region 112e can be formed by blocking the regions of the LDD layers 112b and 112d through a photoresist and a mask process and then doping the impurity ions at a high concentration. The reason for forming the LDD layers 112b and 112d in this manner is to reduce the electric field applied on the junction due to the resistance in the region, thereby reducing the off current and minimizing the decrease in the on current. Although not shown in the figure, a channel region 112c is not described.

The impurity ions may be formed of n-type impurity ions using phosphorus (P) or the like, or p-type impurity ions using boron (B) or the like.

Referring to FIG. 2C, an interlayer insulating layer 118 is formed on the entire surface of the substrate 100 on which the gate electrode, the connection electrode Con, and the capacitor second electrode 115c are formed. A photoresist is formed on the interlayer insulating film 118 and a photoresist pattern is formed by an exposure and a development process using a second mask including a transmission portion and a blocking portion. A source contact hole 200a for exposing a source region 112a of the semiconductor layer 112 by etching the interlayer insulating film 118 using the photoresist pattern as a mask, a source contact hole 200a for exposing a source region 112a of the semiconductor layer 112, A drain contact hole 200b exposing the connection electrode Con and two first and second connection contact holes 200c and 200d exposing the connection electrode Con.

Referring to FIG. 2D, a source / drain metal layer is formed on the entire surface of the substrate 100 including the interlayer insulating layer 118 having the plurality of contact holes 200a, 200b, 200c, and 200d. A photoresist is formed on the source / drain metal layer, and a photoresist pattern is formed by an exposure and development process using a third mask including a transmission portion and a blocking portion. The source / drain metal layer is etched using the photoresist pattern as a mask to form a source electrode 119a, a drain electrode 119b, a connection contact portion 119c, a capacitor third electrode 120, a power supply wiring 121, Thereby forming the pad portion 122. The source electrode 119a is formed on the source region 112a of the semiconductor layer 112 through the source contact hole 200a and the drain electrode 119b is formed on the drain contact hole 200b, The second connection contact hole 200c is formed on the drain region 112e and the connection electrode Con of the semiconductor layer 112 through the first connection contact hole 200c and the connection contact portion 119c is formed on the second connection contact hole 200d. Is formed on the connection electrode (Con). Accordingly, the drain electrode 119b electrically connects the drain region 112e of the semiconductor layer 112 and the connection electrode Con.

Referring to FIG. 2E, the source electrode 119a, the drain electrode 119b, the connection contact 119c, the capacitor third electrode 120, the power supply wiring 121, and the pad portion 122 are included An organic layer 123 is formed on the entire surface of the substrate 100. A photoresist is formed on the organic layer 123 and a photoresist pattern is formed by an exposure and a development process using a fourth mask including a transmission portion and a blocking portion. The organic layer 123 of the pad region including the pad portion 122 is etched using the photoresist pattern as a mask so that the organic layer 123 is formed only in the display region, A first contact hole 201a exposing the connection contact portion 119c and a second contact hole 201b exposing the power supply wiring 121 are formed. The region where the second contact hole 201b is formed may be a pad portion of the power supply wiring 121.

Referring to FIG. 2F, a contact metal layer 124a, an organic light emitting diode lower electrode 125a, a power contact part Po, and a contact hole are formed on a substrate 100 on which the organic layer 123 and the pad part 122 are formed. Thereby forming a pad contact portion 124c. Will be described in detail with reference to Figs. 4A to 4D.

FIGS. 4A to 4D illustrate a method of manufacturing a contact metal layer, an organic light emitting diode lower electrode, a power contact portion, and a pad contact portion of the organic light emitting diode display of the present invention.

4A, a metal layer 124 and a conductive layer 125 are formed on an entire surface of a substrate 100 on which an organic layer 123 and a pad portion 122 formed with the first and second contact holes 201a and 201b are formed, . The metal layer 125 may be formed of aluminum-neodymium (AlNd) or molybdenum (Mo), and the conductive layer 125 may be formed of ITO / AlNd, ITO / Al, ITO / .

Referring to FIG. 4B, the photoresist patterns 400a, 400b, and 400c having a step on the metal layer 124 and the conductive layer 125 are formed by a photolithography technique using the second halftone mask 160. The second halftone mask 160 may be formed of a diffraction mask.

Specifically, a negative photo resist, which is a photosensitive material, is formed on the metal layer 124 and the conductive layer 125. However, the process may be carried out using a positive photoresist.

At this time, the negative photoresist is a photosensitive material which is cured when light is irradiated. Then, a second halftone mask 160 is placed on the negative photoresist and light is irradiated. The second halftone mask 160 is composed of a shielding portion A, a transmitting portion B and a semi-transmitting portion c. The transmitting portion B transmits light as it is and the semi- Transmissive material having a different transmittance is used to pass less light than the transmissive portion (B), and the blocking portion (A) completely blocks the light.

Accordingly, a negative photoresist, which is opposite to the transmissive portion B of the second halftone mask 160, is irradiated and cured by light, thereby forming a third photoresist pattern having a stepped portion in the lower electrode region of the organic light- And the negative photoresist on the pad region opposed to the semi-transparent portion C is semi-cured by the light passing through the semi-transparent portion C, so that the fourth photoresist pattern 400a, (400c). The negative photoresist facing the blocking portion A of the second halftone mask 160 is removed to expose the conductive layer 125.

Referring to FIG. 4C, the exposed conductive layer 125 and the metal layer 124 are patterned by etching using the third and fourth photoresist patterns 400a, 400b, and 400c as a mask.

Referring to FIG. 4D, when the ashing process is performed on the third and fourth photoresist patterns 400a, 400b and 400c, the fourth photoresist pattern 400c formed on the lower pad region is removed The conductive layer 125c is exposed, and the third photoresist patterns 400a and 400b on the organic light emitting diode lower electrode region and the power contact region remain.

When the exposed conductive layer 125c is etched, a pad contact portion 124c is formed. By forming the pad contact portion 124c in the pad portion 122, the pad portion 122 is not corroded and the process can be stabilized. After the third photoresist patterns 400a and 400b are removed, the contact metal layer 124a and the contact metal layer 124a, which are formed on the connection contact portion 119c through the first contact hole 201a, An organic light emitting diode lower electrode 125a is formed on the first contact hole 201b and a power contact part Po formed by the power supply metal layer 124b and the power supply conductive layer 125b is formed on the power supply wiring 121 through the second contact hole 201b. Is formed.

Referring to FIG. 2G, a barrier layer 126 is formed on the entire surface of the substrate 100 on which the organic light emitting diode lower electrode 125a, the power contact part Po, and the pad contact part 124c are formed. The barrier layer 126 defines a light emitting region and a non-emitting region. A photoresist is formed on the barrier layer 126, and a photoresist pattern is formed by an exposure and a development process using a fifth mask including a transmission portion and a blocking portion. The barrier rib layer 126 is etched using the photoresist pattern as a mask to expose a pad region including the pad portion 122 and a light emitting region of the lower electrode 125a, Layer 126 is formed.

2H, an organic light emitting layer 127 is formed on the exposed lower organic light emitting diode 125a and an upper electrode 128 is formed on the organic light emitting layer 127 and the barrier layer 126. Referring to FIG. The organic light emitting layer 127 may be a single layer made of a light emitting material and may include a hole injection layer, a hole transporting layer, a light emitting material layer, , An electron transporting layer, and an electron injection layer.

The organic light emitting diode may be driven by a top emission type in which light emitted from the organic emission layer 127 is emitted toward the upper electrode 128. When a predetermined voltage is applied to the lower electrode 125a and the upper electrode 128 according to a selected color signal, the organic light emitting diode receives electrons injected from the lower electrode 125a and the upper electrode 128 And is transported to the organic light emitting layer 127 to form an exciton. When the exciton transitions from the excited state to the ground state, light is emitted and emitted in the form of visible light. The emitted light passes through the transparent upper electrode 128 and exits to the outside. At this time, the upper electrode 128 may be formed by depositing a thick transparent conductive material on a semitransparent metal film thinly deposited with a metal material having a low work function.

Accordingly, an organic light emitting diode display device and a method of manufacturing the same according to the present invention include: forming a semiconductor layer 112 and a capacitor first electrode 113 on a buffer layer 110; Forming a gate electrode (Gate), a connection electrode (Con), and a capacitor second electrode (115c) on the gate insulating film (114); Forming contact holes 200a, 200b, 200c, and 200d exposing the source region 112a and the drain region 112e of the semiconductor layer 112 and the connection electrode Con on the interlayer insulating layer 118, ; A step of forming a source electrode 119a and a drain electrode 119b, a connection contact 119c, a capacitor third electrode 120, a power supply wiring 121 and a pad portion 122 on the interlayer insulating layer 118 ; Forming first and second contact holes (201a, 201b) on the organic layer (123) to connect the connection contact portion (119c) and the power supply wiring (121); Forming a contact metal layer 124a, an organic light emitting diode lower electrode 125a, a power contact part Po and a pad contact part 124c on the organic layer 123; And forming the barrier rib layer 126 on the organic light emitting diode lower electrode 125a. That is, a total of five mask processes and two halftone mask processes are required, which simplifies the process.

That is, the present invention omits the protective layer formed on the source electrode and the drain electrode to form the contact hole on the protective layer and omits the steps necessary to form the connecting electrode on the protective layer. A gate electrode, a connection electrode and a capacitor second electrode are formed on the gate insulating film using a first halftone mask, and a contact metal layer, an organic light emitting diode lower electrode, a power contact portion, and a pad contact portion are formed using a second halftone mask And simplifying the process without reducing the reflection efficiency, and a method of manufacturing the organic light emitting diode display device. In addition, the present invention has the effect of stabilizing the process without forming the pad contact portion in the pad portion, so that the pad portion is not corroded.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

100: insulating substrate 110: buffer layer
112: semiconductor layer 113: capacitor first electrode
114: Gate insulating film Gate: Gate electrode
Con: Connection electrode 115c: Capacitor second electrode
118: interlayer insulating film 119a: source electrode
119b: drain electrode 120: capacitor third electrode
121: power supply wiring 122: pad portion
123: organic layer 124a: contact metal layer
125a: lower electrode Po: power source contact part
124c: pad contact portion 126: partition wall layer
127: organic light emitting layer 128: upper electrode

Claims (21)

A buffer layer formed on an insulating substrate;
A thin film transistor formed on the buffer layer, a connection electrode, a capacitor, a power supply, and a pad;
An organic light emitting diode formed between the thin film transistor and the capacitor and the organic layer;
A semiconductor layer including a source region, a channel region, and a drain region formed on the buffer layer, which constitutes the thin film transistor; a gate insulating film; a gate electrode; a source electrode connected to a source region and a drain region of the semiconductor layer; And a drain electrode;
An interlayer insulating film formed between the first, second, and third electrodes of the capacitor, the gate insulating film formed between the first and second electrodes, and the second and third electrodes;
A power supply wiring and a power supply contact part, which are formed on the interlayer insulating film and constitute the power supply part;
A pad contact portion formed to surround the pad portion on the pad portion; And
A lower electrode constituting the organic light emitting diode, an organic light emitting layer, and an upper electrode,
The connection electrode is formed on the gate insulating layer, the drain electrode of the thin film transistor is electrically connected to the connection electrode, and the organic light emitting diode and the connection electrode are electrically connected to the connection contact portion by the contact metal layer Characterized in that the organic light emitting diode display device. The method according to claim 1,
Wherein the source region and the drain region of the semiconductor layer further include an LDD layer. The method according to claim 1,
Wherein the semiconductor layer and the capacitor first electrode are made of the same material. The method according to claim 1,
Wherein the gate electrode is made of ITO and a metal layer. The method according to claim 1,
Wherein the connection electrode comprises ITO and a metal layer. The method according to claim 1,
And the second electrode of the capacitor is made of ITO. The method according to claim 1,
Wherein the source electrode, the drain electrode, the connection contact portion, the capacitor third electrode, the power supply wiring, and the pad portion are made of the same material. The method according to claim 1,
Wherein the power source contact layer comprises a power source metal layer and a power source conductive layer, the power source metal layer of the power source contact part is made of the same material as the pad contact part and the contact metal layer, And an organic light emitting diode (OLED) display device. The method according to claim 1,
Wherein the organic light emitting diode lower electrode is made of ITO / AlNd, ITO / Al or ITO / Ag / ITO. The method according to claim 1,
Further comprising a partition wall layer defining a light emitting region and a non-light emitting region on the lower electrode of the organic light emitting diode. Forming a buffer layer on an insulating substrate;
Forming a semiconductor layer and a capacitor first electrode on the buffer layer;
Forming a gate insulating film on the substrate including the semiconductor layer and the capacitor first electrode;
Forming a gate electrode, a connection electrode and a capacitor second electrode on the gate insulating film;
Forming a source region and a drain region in the semiconductor layers below both sides of the gate electrode;
Forming an interlayer insulating film on the gate electrode, the connection electrode, and the capacitor second electrode;
Forming a plurality of contact holes for exposing source regions, drain regions, and connection electrodes of the semiconductor layer to the interlayer insulating layer through an etching process;
A source electrode connected to the source region of the semiconductor layer through the plurality of contact holes, a drain electrode connected to the drain region and the connection electrode of the semiconductor layer, and a connection contact connected to the connection electrode;
Forming a capacitor third electrode, a power supply wiring, and a pad portion on the interlayer insulating film;
Forming an organic layer on the substrate including the source electrode, the drain electrode, the connection contact, the capacitor third electrode, and the power supply wiring;
Forming first and second contact holes exposing the connection contact portion and the power supply wiring to the organic layer through an etching process;
A contact metal layer connected to the connection contact portion through the first contact hole and a lower electrode of the organic light emitting diode are formed and a power contact portion connected to the power supply wiring through the second contact hole is formed, Forming a pad contact portion;
Forming an organic light emitting layer on the lower electrode of the organic light emitting diode; And
And forming an organic light emitting diode upper electrode on the organic light emitting layer. 12. The method of claim 11,
Forming a source region and a drain region in the semiconductor layer includes: forming an LDD layer by doping the source region and the drain region with a first concentration of impurity ions; And
Blocking the LDD layer, and then doping impurity ions having a second concentration higher than the first concentration. ≪ RTI ID = 0.0 > 11. < / RTI > 12. The method of claim 11,
The forming of the gate electrode, the connecting electrode, and the capacitor second electrode may include:
Forming an ITO and a metal layer on the gate insulating film;
Forming a first photoresist pattern having a first step on the gate electrode region and the connecting electrode region on the ITO and the metal layer using a first halftone mask and forming a second photoresist pattern on the capacitor second electrode region Forming a second photoresist pattern having a second step;
Etching the ITO and the metal layer using the first and second photoresist patterns as masks;
Exposing the metal layer by ashing the first and second photoresist patterns to remove only the second photoresist pattern of the capacitor second electrode region;
Etching the exposed metal layer of the capacitor second electrode region; And
And ashing the first photoresist pattern. 2. The method of claim 1, wherein the first photoresist pattern is ashed. 12. The method of claim 11,
The forming of the contact metal layer, the organic light emitting diode lower electrode, the power contact portion, and the pad contact portion may include:
Forming a metal layer and a conductive layer on the substrate including the organic layer, the first and second contact holes, and the pad portion;
Forming a third photoresist pattern having a third step in the organic light emitting diode lower electrode region and the power source contact region on the metal layer and the conductive layer using a second halftone mask, Forming a fourth photoresist pattern having a fourth step lower than the third step;
Etching the metal layer and the conductive layer using the third and fourth photoresist patterns as masks;
Exposing the conductive layer by ashing the third and fourth photoresist patterns to remove only the fourth photoresist pattern in the pad contact region;
Etching the conductive layer of the exposed pad contact region; And
Wherein the step of ashing the third photoresist pattern comprises a step of ashing the third photoresist pattern. 15. The method of claim 14,
Wherein the conductive layer is made of ITO / AlNd, ITO / Al or ITO / Ag / ITO. 12. The method of claim 11,
Wherein the organic light emitting diode lower electrode is made of ITO / AlNd, ITO / Al or ITO / Ag / ITO. 12. The method of claim 11,
Forming an organic light emitting layer on the lower electrode of the organic light emitting diode,
Forming a barrier rib layer defining a light emitting region and a non-emitting region on the lower electrode of the organic light emitting diode;
And forming an organic light emitting layer in the light emitting region. 12. The method of claim 11,
Wherein the semiconductor layer and the capacitor first electrode are made of the same material. 12. The method of claim 11,
Wherein the source electrode, the drain electrode, the connection contact portion, the capacitor third electrode, the power supply wiring, and the pad portion are made of the same material. 12. The method of claim 11,
Wherein the gate electrode and the connection electrode are made of ITO and a metal layer, and the capacitor second electrode is made of ITO. 12. The method of claim 11,
Wherein the power source contact layer comprises a power source metal layer and a power source conductive layer, the power source metal layer of the power source contact part is made of the same material as the pad contact part and the contact metal layer, Wherein the organic light emitting diode display device is formed of a material similar to the organic light emitting diode display device.

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