KR100705819B1 - Method for manufacturing light emitting diode and light emitting diode the same - Google Patents

Abstract

The present invention relates to a method of manufacturing an electroluminescent device and an electroluminescent device.

In the method of manufacturing an electroluminescent device according to the present invention, a planarization film is formed on a thin film transistor formed on a substrate, a contact hole is formed on a source / drain electrode of the thin film transistor, and a contact electrode is formed on the contact hole. The first electrode and the second electrode are separately formed in the pixel on the planarization film, and an insulating film is formed on the planarization film. A barrier rib is formed on the insulating layer to surround the pixel, a lower emission layer is formed on the first electrode, and a third electrode is formed on the lower emission layer, and the third electrode is electrically connected to the contact electrode. An upper emission layer is formed on the third electrode, and a fourth electrode is formed on the upper emission layer, and the fourth electrode is electrically connected to the second electrode exposed under the partition wall.

Electroluminescent element, double sided light emission, contact electrode

Description

Method for manufacturing light emitting diode and light emitting diode the same}

1 to 3 is a view showing the structure of a conventional double-sided light emitting organic electroluminescent device.

4a to 4f schematically illustrate a method of manufacturing an electroluminescent device according to the present invention.

5 is a view showing an electroluminescent device according to the present invention.

<Explanation of symbols on main parts of the drawings>

410,510: substrate 430,530: thin film transistor portion

441,541: first electrode 442,542: insulating film

443,543: lower emission layer 444,544: third electrode

451, 551: second electrode 453, 553: upper emission layer

454,554: fourth electrode 450,550: planarization film

480,580 contact electrode 490,590 partition wall

The present invention relates to a method of manufacturing an electroluminescent device and an electroluminescent device.

In the organic light emitting display device, electrons and holes are injected into the light emitting layer from an electron injection electrode and a hole injection electrode, respectively, and an exciton in which the injected electrons and holes combine is excited. The device emits light when it falls from the ground state to the ground state.

The organic light emitting diode is classified into a passive matrix organic light emitting diode (PMOLED) and an active matrix organic light emitting diode (AMOLED) according to a driving method.

In general, an active matrix type organic light emitting display device has an advantage of providing high luminous efficiency and high image quality, and uses a thin film transistor (TFT) as a switching device for driving pixels independently.

Such an organic light emitting display device has a top emission type, a bottom emission type, and a dual emission type according to a direction in which light is emitted.

Here, there are many problems to be studied in the double-sided organic light emitting device capable of realizing images on both sides. Hereinafter, the problem with the conventional technology of the double-sided organic light emitting device will be described.

1 to 3 is a view showing the structure of a conventional double-sided light emitting organic electroluminescent device.

The conventional organic electroluminescent device 100 shown in FIG. 1 is manufactured to enable a double-sided display by bonding a lower light emitting device.

In such a light emitting device, a polysilicon layer is formed on the first and second substrates 110 and 140, and a gate electrode is formed thereon, and then source / drain regions are formed on the gate electrode. The gate electrode is insulated by the gate insulating film. Source / drain electrodes are formed in holes formed in the gate insulating layer to form driving elements 114 and 144 on the first and second substrates 110 and 140. Here, a protective film or a flat film may be formed on the driving elements 114 and 144.

The organic light emitting parts 116 and 146 formed on the driving elements 114 and 144 and emitted by the driving of the driving elements 114 and 144 are first electrodes 112 and 142 electrically connected to the source / drain electrodes. The organic light emitting units 116 and 146 and the second electrodes 118 and 148 are sequentially formed in the upper portion. In general, the first electrodes 112 and 142 become anode electrodes, and the second electrodes 118 and 148 become cathode electrodes.

On the other hand, the organic electroluminescent device 100 as described above is encapsulated by attaching the third and fourth substrates 120 and 150 of glass cap material to the device using the sealants 117 and 147. At this time, the getters 119 and 149 are attached to the inside to absorb moisture or oxygen penetrated from the outside.

Currently, the display adopted in the mobile phone is divided into a sub panel and a main panel, and two lower emitting light emitting devices as shown in FIG. 1 are separately made and then placed in a module kit. It fits into the phone.

In this case, two light emitting devices may be manufactured and attached to the mobile phone by attaching the light emitting surfaces to be opposite to each other, and the thickness of the module may increase.

FIG. 2 is a view illustrating a structure of another conventional double-sided light emitting organic light emitting display device, after forming a polysilicon layer on the first and second substrates 210 and 220 and forming a gate electrode thereon. Source / drain regions are formed on the gate electrode. The gate electrode is insulated by the gate insulating film. Source / drain electrodes are formed in holes formed in the gate insulating layer, and driving elements 214 and 244 are formed on the first and second substrates 210 and 220. Here, a protective film or a flat film may be formed on the driving elements 214 and 244.

The organic light emitting parts 216 and 226 formed on the driving elements 214 and 244 are sequentially formed on the first and second electrodes 212 and 222 electrically connected to the source / drain electrodes. Two electrodes 218 and 228 are formed. In general, the first electrodes 212 and 222 become anode electrodes, and the second electrodes 218 and 228 become cathode electrodes.

The organic light emitting device 200 as described above encapsulates the first and second substrates 210 and 220 using the sealant 217.

In this structure, the two devices are manufactured, respectively, and attached using the sealant 217 so that the light emitting surfaces thereof are opposite to each other, thereby completing a double-sided light emitting organic light emitting diode. However, the double-sided organic light emitting diode 200 shown in FIG. 2 also has the limitation of making two light emitting elements as in the case of FIG. 1 except that the step of encapsulating the manufactured light emitting elements is omitted. there was.

Therefore, the structure of the double-sided organic light emitting diode having a short process, low cost and a thin thickness is urgently needed. In addition, in the case of the conventional double-sided light-emitting organic light emitting device as described above, the lower emission type is limited by the opening of the lower portion by the thin film transistor as a driving unit, the upper emission type does not have such a restriction.

However, by arranging the upper light emitting part and the lower light emitting part separately, an area in one pixel is divided into two parts, and when the light emitting side in one direction is viewed, it is designed to have a sufficient opening area, thereby raising many problems in terms of efficiency and luminance. .

3 is a view illustrating a conventional double-sided light emitting organic light emitting display device improved from FIGS. 1 and 2, wherein a driving device 314 is formed on a first substrate 310, and a driving device 314 source / drain electrode is formed. Anode electrodes 312 and 322 are formed on both sides. First and second organic light emitting layers 316 and 326 and cathode electrodes 318 and 328 are formed on the anode electrodes 312 and 322, respectively. Here, the cathode electrode 318 is formed of a material such as aluminum (Al) to form a reflective film so that the first organic light emitting layer 316 can emit light downward, the cathode electrode 328 is a transparent conductive layer (ITO) The second organic light emitting layer 326 is formed to emit light upward using a material such as).

However, in the case of the conventional double-sided light emitting organic light emitting device as described above, the selective light emission can be performed on both sides by one driving device 314, but the area in one pixel is divided into two parts, so that the opening area is too small. This is an undesirable structure in terms of brightness.

An object of the present invention for solving the above problems is to form a contact electrode connected to a source / drain electrode in a planarization film formed on a thin film transistor portion, and to separate and form a first electrode and a second electrode in one pixel. . A lower light emitting layer is formed on the first electrode and a third electrode is formed on the lower light emitting layer. The lower light emitting layer is formed to be connected to the contact electrode, the upper light emitting layer is formed on the third electrode, and the fourth electrode is formed on the upper light emitting layer. It is formed to be connected to two electrodes. Accordingly, the lower and upper emission layers share one driving element in one pixel, thereby increasing the aperture ratio and simplifying the manufacturing process, thereby improving yield.

In the method of manufacturing an electroluminescent device according to the present invention for solving the above problems, a planarization film is formed on a thin film transistor formed on a substrate, a contact hole is formed on a source / drain electrode of the thin film transistor and a contact electrode is formed on the contact hole. Forming a contact electrode to form a contact; First and second electrode forming steps formed on the planarization layer and separating and forming the first electrode and the second electrode in the pixel so as to be spaced apart from the contact electrode; Forming an insulating film on the planarization film and patterning the insulating film to expose a portion of the first and second electrodes in the pixel; Forming a barrier rib on the insulating layer, the barrier rib forming step of covering a portion of the contact electrode and surrounding the pixel; Forming a light emitting layer on the first electrode; Forming a third electrode on the lower light emitting layer by using a partition wall, wherein the third electrode is electrically connected to the contact electrode; Forming an upper light emitting layer on the third electrode; And forming a fourth electrode on the upper emission layer using the partition wall, wherein the fourth electrode is electrically connected to the second electrode exposed under the partition wall.

Here, in the first and second electrode forming steps, the first electrode is formed on the entire surface of the pixel spaced apart from the contact electrode, and the second electrode is formed on one side of the region where the contact electrode is formed and formed on both sides of the pixel boundary.

Here, in the insulating film forming step, the insulating film is formed in a shape of an inclined rhombus so as to partition the pixels and separate the boundary lines of the pixels so as to eliminate electrical interference between the pixels.

Here, in the barrier rib forming step, the barrier rib is formed on the upper portion of the insulating film in the form of an inverse taper having a narrow lower width so as to partially cover the contact electrode and the second electrode.

Here, in the lower light emitting layer forming step and the upper light emitting layer forming step, the lower and upper light emitting layers are formed using a vacuum chamber and a shadow mask, and are organic light emitting layers deposited separately by pixels by partition walls surrounding the pixels.

Here, in the third electrode forming step, the third electrode is formed such that the third electrode is in contact with a part of the contact electrode by a gradient deposition method using evaporation.

Here, in the fourth electrode forming step, the fourth electrode is formed such that the fourth electrode is in contact with a part of the second electrode by a gradient deposition method using evaporation.

Here, after the fourth electrode forming step, a protective film is formed on the entire surface of the substrate, and further includes a protective film forming step of forming a wider than the planarization film surrounding the thin film transistor portion, the lower and upper light emitting layers, and the partition wall.

Here, the first, second and fourth electrodes are anode electrodes and are formed of a metal having a large work function or a transparent conductive layer having a large work function.

Here, the third electrode is a common cathode electrode, and is formed of an opaque metallic material to function as a reflective film capable of reflecting light.

Here, the electroluminescent device is connected to the driving unit and the thin film transistor unit formed on either side of the substrate, the driving unit and the third electrode is connected, selectively connected to any one of the first electrode or the second electrode or the first electrode or When voltage is applied to either one of the second electrodes and the third electrode, the light is selectively emitted toward the upper side or the lower side.

On the other hand, the electroluminescent device according to the present invention, the substrate; A planarization layer having contact holes on the source / drain electrodes of the thin film transistor unit formed on the substrate; A contact electrode formed on the planarization layer to be electrically connected to a source / drain electrode of the thin film transistor through a contact hole; First and second electrodes formed on the planarization layer and separated from the contact electrode in the pixel; An insulating film formed on the planarization film and formed to expose a portion of the first and second electrodes in the pixel; Barrier ribs formed on the insulating layer to cover a portion of the contact electrode and the second electrode and surround the pixel; A lower emission layer formed on the first electrode; A third electrode formed on the lower emission layer and separated from each other by the partition wall and electrically connected to the contact electrode; An upper emission layer formed on the third electrode; And a fourth electrode formed on the upper emission layer and separated from each other by the partition wall and electrically connected to the second electrode.

Here, the first electrode is spaced apart from the contact electrode and formed on the entire surface of the pixel, and the second electrode is formed on one side of the region where the contact electrode is formed and is formed on both sides of the pixel boundary line.

Here, the insulating layer is formed in a shape of an inclined rhombus so as to partition the pixels and divide the boundary lines of the pixels to eliminate electrical interference between the pixels.

Here, the substrate may further include a passivation layer forming step of forming a passivation layer on the entire surface of the substrate to surround the thin film transistor portion, the lower and upper emission layers, and the partition wall, and to form a wider than the planarization layer.

Here, the first, second and fourth electrodes are anode electrodes, and are formed of a metal having a large work function or a transparent conductive layer having a large work function.

Here, the third electrode is a common cathode electrode, and is formed of an opaque metallic material to function as a reflective film capable of reflecting light.

Here, the electroluminescent device is connected to the driving unit and the thin film transistor unit formed on either side of the substrate, the driving unit and the third electrode is connected, selectively connected to any one of the first electrode or the second electrode or the first electrode or The voltage is applied to either one of the second electrodes and the third electrode to selectively emit light toward the upper or lower portion.

Here, the lower and upper light emitting layers are formed of an organic material.

Specific details of other embodiments are included in the detailed description and drawings.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

<Method of manufacturing electroluminescent device>

4A to 4F are schematic views illustrating a method of manufacturing an electroluminescent device according to the present invention.

First, FIG. 4A illustrates a step of forming a contact electrode. The planarization layer 450 is formed on the thin film transistor unit 430 formed on the substrate 410 and the source / drain electrodes 435 and 436 of the thin film transistor unit 430 are formed. ) And forming a contact electrode 480 on the contact hole.

In the thin film transistor unit 430 formed on the substrate 410, a gate 431 is formed, and a gate insulating layer 432 that insulates the gate 431 is formed. An active layer 433 is formed on the gate insulating layer 432, and an ohmic contact layer 434 is formed on both sides of the gate 431 on the active layer 433. Source / drain electrodes 435 and 436 are formed on the ohmic contact layer 434 formed on both sides of the gate 431 to form the thin film transistor unit 430. However, the structure of the thin film transistor unit 430 described above is not limited thereto.

The planarization film 450 is formed on the thin film transistor 430 to cover the thin film transistor 430, and a contact hole is formed in the planarization film 450 on the source / drain electrodes 435 and 436. The contact hole is formed through the photolithography process, such as via-hole (Via-Hole), and then the contact electrode 480 is formed on the contact hole formed in the planarization film 450 by using a sputtering method or the like. do. Here, the contact electrode 480 is preferably formed using the same material as the electrode to be formed later.

Subsequently, FIG. 4B is a step of forming the first and second electrodes, in which the first electrode 441 and the second electrode 451 are separated and formed in the pixel so as to be spaced apart from the contact electrode 480 on the planarization film 450. It's a step.

Here, the first electrode 441 is formed on the entire surface of the planarization film 450 to be spaced apart from the contact electrode 480 formed on the planarization film 450, and the boundary line of the pixel which is one side of the region where the contact electrode 480 is formed. The second electrode 451 is formed to span both sides. Here, the first and second electrodes 441 and 451 are anode electrodes. The first and second electrodes 441 and 451 are formed of a metal having a large work function or a transparent conductive layer having a large work function.

Accordingly, the first electrode 441 and the second electrode 451 are separated from each other in one pixel, and the first electrode 441 and the second electrode 451 except for the region where the pixel is formed are connected to a line. As long as it is formed so that the first electrode 441 and the second electrode 451 can be connected in the entire panel, respectively, the signal can be selectively applied.

Subsequently, in FIG. 4C, an insulating film forming step is performed to form and pattern the insulating film 442 on the planarization film 450 to expose a portion of the first and second electrodes 441 and 451 in the pixel.

In this case, the insulating layer 442 is formed in a shape of an inclined rhombus so as to partition the pixels and separate the boundary lines of the pixels so as to eliminate electrical interference between the pixels.

Accordingly, the insulating layer 442 partitions the pixel, and the first electrode 441 is exposed in the pixel so that the light emitting layer can be formed on the first electrode 441. On the other hand, only a portion of the edge of the second electrode 451 is insulated by the insulating layer 442 so as to span both boundary lines between the pixel and the pixel.

Subsequently, in FIG. 4D, a barrier rib 490 is formed on the insulating layer 442, and a portion of the contact electrode 480 is covered to surround the pixel.

Here, the partition wall 490 is formed on the upper portion of the insulating film 442 in the form of an inverse taper having a narrow lower width so as to cover a part of the contact electrode 480 and the second electrode 451 simultaneously. It may be formed on an upper portion of the insulating film 442 and a part of the second electrode 451.

For reference, the above-described process is mainly formed using a general method such as sputter deposition, spin coating, photolithography and development, and the subsequent process is to form an organic light emitting layer, electrode deposition and protective film under vacuum atmosphere. Process and so on.

Subsequently, FIG. 4D illustrates a bottom light emitting layer forming step, wherein the bottom light emitting layer forming step is a step of forming the bottom light emitting layer 443 on the first electrode 441.

Here, the lower emission layer 443 is an organic light emitting layer formed by using a vacuum chamber and a shadow mask and deposited separately by pixel by the partition wall 490 surrounding the pixels.

Subsequently, FIG. 4E illustrates a third electrode forming step in which a third electrode 444 is formed on the lower emission layer 443 using the partition wall 490, and the third electrode 444 is electrically connected to the contact electrode 480. This step is to connect. Referring to region (C) of FIG. 4E, it can be seen that the third electrode 444 is formed on a portion of the contact electrode 480.

Here, the third electrode 444 is formed so that the third electrode 444 is in contact with a part of the contact electrode 480 by a gradient deposition method using an evaporation (E). As shown in the drawing, the deposition is performed in the direction in which the contact electrode 480 is formed by the gradient deposition method for forming the third electrode 444. Here, the third electrode 444 is a common cathode electrode, and is formed of an opaque metallic material to function as a reflective film capable of reflecting light.

Subsequently, FIG. 4F is a step of forming an upper emission layer, and forming an upper emission layer 453 on the third electrode 444.

Here, the upper emission layer 453 is an organic light emitting layer formed by using a vacuum chamber and a shadow mask and separated and deposited for each pixel by the partition wall 490 surrounding the pixel.

Subsequently, FIG. 4F illustrates a fourth electrode forming step, wherein the fourth electrode 454 is formed on the upper emission layer 453 using the partition wall 490, and the second electrode 451 exposed under the partition wall 490 is formed. In this step, the fourth electrode 454 is electrically connected thereto. Referring to region (A) of FIG. 4F, it can be seen that the fourth electrode 454 is formed on a part of the second electrode 451.

Here, the fourth electrode 454 is an anode electrode and is formed of a metal having a large work function or a transparent conductive layer having a large work function. In this case, the fourth electrode 454 is formed to be in contact with a part of the second electrode 451 by a gradient deposition method using evaporation. As shown in the drawing, the inclined deposition is performed in the direction in which the second electrode 451 is formed by the inclined deposition method for forming the fourth electrode 454.

By the above manufacturing method, an electroluminescent device in which the lower light emitting layer and the upper light emitting layer selectively emit light is manufactured by one driving device formed in one pixel, thereby increasing the aperture ratio and simplifying the manufacturing process, thereby improving yield.

After the fourth electrode forming step, although not shown, the planarization layer 450 surrounds the thin film transistor unit 430, the lower and upper emission layers 443 and 453, and the partition wall 490 on the entire surface of the substrate 410. A protective film may be further formed by further including a protective film forming step of forming a protective film more broadly. The cover substrate may be provided and sealed with the substrate 410 to protect the device from moisture or oxygen.

On the other hand, the electroluminescent device as described above is connected to the driving unit (not shown) and the thin film transistor unit 430 formed on either side of the substrate 410, the driving unit (not shown) and the third electrode 444 is connected When a voltage is applied to any one of the first electrode 441 or the second electrode 451 and the third electrode 444 selectively connected to any one of the first electrode 441 or the second electrode 451. It emits light selectively toward the top or the bottom. The third electrode 444, which is a common cathode electrode, is connected through the first electrode 441 and the thin film transistor unit 430 so that the lower emission layer 443 emits light when the signal is applied. ) And the third electrode 444, which is a common cathode electrode, is connected through the thin film transistor unit 430 to indicate that the upper emission layer 453 emits light.

Accordingly, the lower light emitting layer 443 and the upper light emitting layer 453 are not driven at the same time, and can be driven alternately, which is suitable for applications such as mobile phone double-sided windows (duplex display).

<Electroluminescent Device>

5 is a view showing an electroluminescent device according to the present invention.

As illustrated, in the electroluminescent device 500 according to the present invention, the thin film transistor unit 530 formed on the substrate 510 has a gate 531 formed therein, and a gate insulating film for insulating the gate 531. 532 is formed. An active layer 533 is formed on the gate insulating layer 532, and an ohmic contact layer 534 is formed on both sides of the gate 531 on the active layer 533. Source / drain electrodes 535 and 536 are formed on the ohmic contact layer 534 formed on both gates 531 to form the thin film transistor unit 530. However, the structure of the thin film transistor unit 530 described above is not limited thereto.

The planarization film 550 is formed on the thin film transistor unit 530 so as to cover the thin film transistor unit 530. A contact hole is formed in the planarization film 550 on the source / drain electrodes 535 and 536. The contact electrode 580 is formed on the contact hole formed in the planarization layer 550 to be electrically connected to the source / drain electrodes 535 and 536 of the thin film transistor unit 530.

First and second electrodes 541 and 551 are formed on the planarization layer 550 and separated from the contact electrode 580 in the pixel. The first electrode 541 is formed on the entire surface of the planarization film 550 to be spaced apart from the contact electrode 580 formed on the planarization film 550, and the second electrode 551 is provided with the contact electrode 580. It is formed so as to cover both boundary lines of the pixel which is one side of an area | region. Here, the first and second electrodes 541 and 551 are anode electrodes and are formed of a metal having a large work function or a transparent conductive layer having a large work function.

An insulating layer 542 is formed on the planarization layer 550 to expose a portion of the first and second electrodes 541 and 551 in the pixel. The insulating film 542 is formed in a shape of an inclined rhombus so as to partition the pixels and divide the boundary lines of the pixels to eliminate electrical interference between the pixels. On the other hand, only a portion of the edge of the second electrode 551 is insulated by the insulating layer 542 so as to span both boundary lines between the pixel and the pixel.

A partition wall 590 is formed in an inverse taper shape on the insulating layer 542 so as to cover a part of the contact electrode 580 and the second electrode 551 to surround the pixel.

A lower emission layer 543 formed of an organic material is formed on the first electrode 541.

A third electrode 544 is formed on the lower emission layer 543 by the partition 590 so as to be separated from each other and electrically connected to the contact electrode 580. The third electrode 544 is diagonally deposited in the direction in which the contact electrode 580 is formed by the gradient deposition method and is connected to a part of the contact electrode 580. Here, the third electrode 544 is a common cathode electrode, and is formed of an opaque metallic material to serve as a reflective film capable of reflecting light.

An upper emission layer 553 formed of an organic material is formed on the third electrode 544.

A fourth electrode 554 is formed on the upper emission layer 553 by the partition 590 so as to be separated for each pixel and electrically connected to the second electrode 551. The fourth electrode 554 is inclinedly deposited in the direction in which the second electrode 551 is formed by the gradient deposition method and is connected to a part of the second electrode 551. Here, the fourth electrode 554 is an anode electrode, and is formed of a metal having a large work function or a transparent conductive layer having a large work function.

A protective film 585 is formed on the entire surface of the substrate 510 to cover the thin film transistor unit 530, the lower and upper emission layers 543 and 553, and the partition wall 590, and is wider than the planarization film 550. 520 and sealed with the substrate 510 to protect the device from moisture and oxygen.

On the other hand, the electroluminescent device 500 as described above is connected to the driving unit (not shown) and the thin film transistor unit 530 formed on any one of the substrate 510, the driving unit (not shown) and the third electrode 544 Connected to one of the first electrode 541 or the second electrode 551 and selectively connected to any one of the first electrode 541 or the second electrode 551 and a voltage to the third electrode 544. When it is applied, it is possible to selectively emit light toward the upper side or the lower side. When the third electrode 544, which is a common cathode electrode, is connected through the first electrode 541 and the thin film transistor unit 530, and a signal is applied, the lower emission layer 543 emits light, and conversely, the fourth electrode 554. ) And the third electrode 544, which is a common cathode electrode, is connected through the thin film transistor unit 530 to indicate that the upper emission layer 553 emits light.

Accordingly, the lower light emitting layer 543 and the upper light emitting layer 553 are not driven at the same time, and can be driven alternately, which is suitable for applications such as mobile phone double-sided windows (duplex display).

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the above-described technical configuration of the present invention may be embodied in other specific forms by those skilled in the art to which the present invention pertains without changing its technical spirit or essential features. It will be appreciated that it may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is represented by the claims to be described later rather than the detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

According to the above-described configuration of the present invention, a contact electrode connected to the source / drain electrodes is formed on the planarization film formed on the thin film transistor unit, and the first electrode and the second electrode are separately formed in one pixel. A lower emission layer is formed on the first electrode, and a third electrode is formed on the lower emission layer. The lower emission layer is formed to be connected to the contact electrode, and an upper emission layer is formed on the third electrode. A fourth electrode is formed on the upper emission layer, and is formed to be connected to the second electrode so that the lower and upper emission layers share one driving element in one pixel to increase the aperture ratio and simplify the manufacturing process, thereby improving the yield. do.

Claims (19)

Forming a planarization film on a thin film transistor formed on the substrate, forming a contact electrode on the source / drain electrode of the thin film transistor, and forming a contact electrode on the contact hole; First and second electrode forming steps formed on the planarization layer and separately forming a first electrode and a second electrode in the pixel to be spaced apart from the contact electrode; An insulating film forming step of forming and patterning an insulating film on the planarization film to expose a portion of the first and second electrodes in the pixel; Forming a barrier rib on the insulating layer, the barrier rib forming step of covering a part of the contact electrode and surrounding the pixel; A lower light emitting layer forming step of forming a light emitting layer on the first electrode; Forming a third electrode on the lower light emitting layer by using the partition wall, and forming a third electrode to electrically connect the third electrode to the contact electrode; An upper emission layer forming step of forming an emission layer on the third electrode; And An electroluminescent device comprising forming a fourth electrode on the upper light emitting layer by using the partition wall, wherein the fourth electrode is electrically connected to the second electrode exposed under the partition wall; Manufacturing method. The method of claim 1, wherein in the first and second electrode forming step, The first electrode is spaced apart from the contact electrode and formed on the entire surface of the pixel, and the second electrode is formed on both sides of the boundary line of the pixel which is one side of the region where the contact electrode is formed. Manufacturing method. The method of claim 1, wherein in the insulating film forming step, And the insulating layer partitions the pixel and forms an inclined diamond shape to separate the boundary lines of the pixel to eliminate electrical interference between the pixels. The method of claim 1, wherein in the forming of the partition wall, The barrier rib is formed on the upper portion of the insulating film in the form of a reverse tapered narrow width of the lower portion so as to cover the part of the contact electrode and the second electrode at the same time. The method of claim 1, wherein in the forming of the lower emitting layer and the forming of the upper emitting layer, The lower and upper light emitting layers are formed using a vacuum chamber and a shadow mask, and the organic light emitting device is characterized in that the organic light emitting layer is deposited separately for each pixel by the partition wall surrounding the pixel. The method of claim 1, wherein in the third electrode forming step, The third electrode is a method of manufacturing an electroluminescent device, characterized in that the third electrode is formed in contact with a portion of the contact electrode by the gradient deposition method using the evaporation (evaporation). The method of claim 1, wherein in the fourth electrode forming step, The fourth electrode is a method of manufacturing an electroluminescent device, characterized in that the fourth electrode is formed in contact with a part of the second electrode by a gradient deposition method using the evaporation (evaporation). According to claim 1, After the fourth electrode forming step, And a protective film forming step of forming a protective film on the entire surface of the substrate to surround all of the thin film transistor unit, the lower and upper light emitting layers, and the partition wall, and to form a wider than the planarization film. The method of claim 1, And the first, second and fourth electrodes are anode electrodes, and are formed of a metal having a large work function or a transparent conductive layer having a large work function. The method of claim 1, The third electrode is a common cathode electrode, a method of manufacturing an electroluminescent device, characterized in that formed of an opaque metallic material to function as a reflective film that can reflect light. The method of claim 1, The electroluminescent device is connected to a driving unit and the thin film transistor unit formed on either side of the substrate, the driving unit and the third electrode is connected, and selectively connected to any one of the first electrode or the second electrode. When the voltage is applied to any one of the first electrode or the second electrode and the third electrode, the light emitting device selectively emits light toward the upper side or the lower side. Board; A planarization layer having contact holes on a source / drain electrode of the thin film transistor unit formed on the substrate; A contact electrode formed on the planarization layer and formed to be electrically connected to the source / drain electrode of the thin film transistor through the contact hole; First and second electrodes formed on the planarization layer and separated from the contact electrode in the pixel; An insulating layer formed on the planarization layer and formed to expose a portion of the first and second electrodes in the pixel; Barrier ribs formed on the insulating layer to cover a portion of the contact electrode and the second electrode and surround the pixel; A lower emission layer formed on the first electrode; A third electrode formed on the lower emission layer and separated from each other by the partition wall, the third electrode being electrically connected to the contact electrode; An upper emission layer formed on the third electrode; And And a fourth electrode formed on the upper emission layer and separated from each other by the partition wall, the fourth electrode being electrically connected to the second electrode. The method of claim 12, The first electrode is spaced apart from the contact electrode and is formed on the entire surface of the pixel, and the second electrode is formed on one side of the region where the contact electrode is formed, and is formed on both sides of the boundary line of the pixel. . The method of claim 12, And the insulating layer partitions the pixel and is formed in an inclined rhombus shape to separate the boundary lines of the pixel to eliminate electrical interference between the pixels. The method of claim 12, And a protective film formed on the front surface of the substrate, the protective film surrounding the thin film transistor unit, the lower and upper light emitting layers, and the barrier rib, and formed wider than the planarization film. The method of claim 12, The first, second and fourth electrodes are anode electrodes, and are formed of a metal having a large work function or a transparent conductive layer having a large work function. The method of claim 12, The third electrode is a common cathode electrode, an electroluminescent device, characterized in that formed of an opaque metallic material to function as a reflective film that can reflect light. The method of claim 12, The electroluminescent device is connected to a driving unit and the thin film transistor unit formed on either side of the substrate, the driving unit and the third electrode is connected, and selectively connected to any one of the first electrode or the second electrode. And a voltage is applied to any one of the first electrode and the second electrode and the third electrode to selectively emit light toward an upper side or a lower side. The method of claim 12, The lower and upper light emitting layers are electroluminescent devices, characterized in that formed of organic material.

Images