KR20160009269A - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

According to an embodiment of the present invention, provided is an organic light emitting display device. The organic light emitting display device comprises: a substrate which is defined as a display area and a pad area; a thin film transistor which is positioned on the substrate in the display area, and has an active layer, a gate electrode, and source and drain electrodes; an anode which is electrically connected to the thin film transistor, and is composed of two or more conductive layers; and a pad electrode which is positioned on the substrate in the pad area, and is composed of a plurality of conductive layers. A first conductive layer of the pad electrode is composed of the same material as the source and drain electrodes. A second conductive layer of the pad electrode and a third layer of the pad electrode are formed to cover the first conductive layer.

Description

Technical Field [0001] The present invention relates to an organic light emitting diode (OLED) display device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display and a method of manufacturing the same, and more particularly, to an organic light emitting display including a pad electrode having improved reliability and a method of manufacturing the organic light emitting display.

The organic light emitting diode (OLED) is a self-emissive type display device, and unlike a liquid crystal display (LCD), a separate light source is not required, so that it can be manufactured in a light and thin shape. Further, the organic light emitting display device is not only advantageous from the viewpoint of power consumption by low voltage driving, but also excellent in color implementation, response speed, viewing angle, and contrast ratio (CR), and is being studied as a next generation display.

The OLED display may be classified into a top emission type organic emission display device, a bottom emission type organic emission display device, and a two-sided emission type organic emission display device according to the emitting direction of light emitted from the organic light emitting device. Display device.

In the top emission type organic light emitting display, it is preferable that the anode is formed of a conductive material having an excellent reflection characteristic and an appropriate work function. However, since an applicable single material satisfying these characteristics does not exist at present, the anode of the organic EL display of the top emission type is composed of a multilayer structure of a conductive layer, for example, ITO (Indium Tin Oxide) Layer, an Ag alloy layer, and an ITO layer. Accordingly, light emitted from the organic light emitting layer of the organic light emitting element is reflected by the silver alloy layer, thereby realizing a top emission type organic light emitting display.

Meanwhile, a pad electrode of a general organic light emitting display is bonded to an external module, and an electric signal is inputted from an external module or an electric signal is outputted to an external module. The uppermost layer of the pad electrode of the general top emission type organic light emitting display is formed of the same material as the anode. Specifically, the pad electrode has a structure in which an electrode formed of the same material as the anode is formed on the electrode formed of the same material as the source electrode and the drain electrode of the thin film transistor.

Here, the layer formed of the same material as the anode, which is the uppermost layer of the pad electrode, is formed simultaneously with the formation of the anode. Specifically, the uppermost layer of the anode and the pad electrode is formed by performing the batch etching process while the ITO material, the silver alloy material, and the ITO material are stacked. Therefore, the uppermost layer of the pad electrode also has a structure in which the ITO layer, the silver alloy layer and the ITO layer are laminated. In the case of the silver alloy layer, the side faces are exposed to the outside, So that a driving failure of the organic light emitting display device may occur.

Specifically, to inspect the reliability of the organic light emitting display, the panel in which the organic light emitting elements are formed is stored in the high temperature chamber for a certain period of time. In this case, the silver alloy layer of the pad electrode is damaged due to the high temperature in the chamber, and the pad electrode is not brought into contact with the external module, so that the driving failure phenomenon in which the OLED display is not normally driven may occur.

Further, when the silver alloy layer of the pad electrode is exposed to the outside, the silver alloy layer can react with moisture and air. In this case, a galvanic effect occurs between the silver alloy layer and the ITO layer. The galvanic phenomenon occurs when two substances having different electromotive force are simultaneously exposed to a corrosive solution. The electromotive force (electromotive force) force: EMF) is corroded to make the pad electrode insulative. Therefore, the pad electrode is not brought into contact with the external module, so that a driving failure phenomenon in which the organic light emitting display device is not normally driven may occur.

In addition, in the module process, the pad electrode may be under a high temperature and high pressure condition. When water is added to the side of the silver alloy layer exposed to the outside under the conditions of such high temperature and high pressure, a migration phenomenon occurs in the silver alloy layer . As a result, a part of the silver alloy layer grows, and adjacent pad electrodes are short-circuited, so that a driving failure phenomenon in which the organic light emitting display device is not normally driven may occur.

Accordingly, a method has been considered in which the pad electrode is composed of only the same material as the source electrode and the drain electrode without using a layer formed of the same material as the anode, which is the uppermost layer of the pad electrode. However, there is a problem that metal materials used as a source electrode and a drain electrode in general can be lost by an etchant used in an etching process for forming an anode.

Accordingly, the inventors of the present invention invented an organic light emitting display having a novel pad electrode structure for preventing damages that may be generated on a pad electrode in a top emission type organic light emitting display and a method of manufacturing the same.

Accordingly, it is an object of the present invention to provide an organic light emitting display device and a method of manufacturing an organic light emitting display device, which can prevent damages or corrosion of the pad electrode.

Another object of the present invention is to provide an organic light emitting display device having improved reliability and a method of manufacturing an organic light emitting display device.

Another object of the present invention is to provide an organic light emitting diode display capable of minimizing a voltage drop occurring in a top emission type OLED display.

The problems of the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

An organic light emitting display according to an embodiment of the present invention is provided. The organic light emitting display includes a substrate defined by a display region and a pad region, a thin film transistor located on the substrate in the display region, the thin film transistor including an active layer, a gate electrode, and a source electrode and a drain electrode; Wherein the first conductive layer of the pad electrode is composed of the same material as the source electrode and the drain electrode, and the first conductive layer of the pad electrode is formed of the same material as the source electrode and the drain electrode, And the second conductive layer of the pad electrode and the third conductive layer of the pad electrode are formed so as to cover the first conductive layer.

According to another aspect of the present invention, the third conductive layer of the pad electrode is formed to cover the second conductive layer of the pad electrode.

According to another aspect of the present invention, the anode includes a lower ITO (Indium Tin Oxide) layer, a silver alloy layer, and an upper ITO layer.

According to another aspect of the present invention, the anode further comprises a dummy layer which is in contact with the back surface of the lower ITO layer and is electrically connected to the lower ITO layer.

According to another aspect of the present invention, the dummy layer is composed of a plurality of layers, and the lower layer of the plurality of layers is a structure in which a copper (Cu) layer is laminated on a molybdenum-titanium (MoTi) alloy layer, The upper layer is formed of a molybdenum-titanium (MoTi) alloy and is formed to cover the lower layer.

According to another aspect of the present invention, the dummy layer is formed of the same material as the second conductive layer of the pad electrode and the third conductive layer of the pad electrode.

According to still another aspect of the present invention, the source electrode and the drain electrode are characterized in that a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer.

According to another aspect of the present invention, an organic light emitting diode display further includes a first planarization layer formed to cover the thin film transistor.

According to another aspect of the present invention, an organic light emitting diode display further includes a first auxiliary wiring formed on an upper surface of the first planarization layer and positioned on the same plane as the anode.

According to another aspect of the present invention, the second conductive layer of the pad electrode and the third conductive layer of the pad electrode are formed of the same material as the first auxiliary wiring.

An organic light emitting display according to another embodiment of the present invention is provided. The organic light emitting display includes a substrate defined by a display region and a pad region, a thin film transistor located on the substrate in the display region, the thin film transistor including an active layer, a gate electrode, and a source electrode and a drain electrode; A first planarization layer and a second planarization layer formed so as to cover the transistor, an anode electrically connected to the thin film transistor and formed on the upper surface of the second planarization layer, a first planarization layer formed on the upper surface of the first planarization layer and electrically connected to the thin film transistor, A first auxiliary wiring formed on the same plane as the dummy electrode, a first auxiliary wiring formed on the same plane as the dummy electrode, and a pad electrode formed on the pad region substrate and composed of a plurality of conductive layers, And the drain electrode, and the second conductive layer of the pad electrode and the third conductive layer of the pad electrode are made of the same material as the drain electrode And is formed so as to cover the first conductive layer.

According to another aspect of the present invention, the third conductive layer of the pad electrode is formed to cover the second conductive layer of the pad electrode.

According to still another aspect of the present invention, the source electrode and the drain electrode are characterized in that a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer.

According to another aspect of the present invention, the dummy electrode is formed of a plurality of electrodes, and the upper electrode of the plurality of electrodes is formed to cover the lower electrode.

According to another aspect of the present invention, the second conductive layer of the pad electrode is formed of the same material as the lower electrode of the dummy electrode, and the third conductive layer of the pad electrode is formed of the same material as the upper electrode of the dummy electrode do.

According to another aspect of the present invention, the dummy electrode is formed of a single electrode, and the dummy electrode is formed of the same material as the second conductive layer of the pad electrode.

According to another aspect of the present invention, the organic light emitting diode display further comprises a second auxiliary wiring formed on an upper surface of the second planarization layer and electrically connected to the first auxiliary wiring.

According to still another aspect of the present invention, the second auxiliary wiring is formed of the same material on the same plane as the anode.

According to another aspect of the present invention, the anode includes a lower ITO (Indium Tin Oxide) layer, a silver alloy layer, and an upper ITO layer.

According to another aspect of the present invention, the anode further includes a dummy layer electrically connected to the dummy electrode in contact with the rear surface of the lower ITO layer.

According to another aspect of the present invention, the dummy layer is formed of a molybdenum-titanium (MoTi) alloy.

A method of manufacturing an organic light emitting display device according to an embodiment of the present invention is provided. A method of manufacturing an organic light emitting display includes providing a substrate defined as a display area and a pad area, a thin film transistor having an active layer, a gate electrode, and a source electrode and a drain electrode on a display area of the substrate, Forming a first planarization layer to cover the thin film transistor, forming a dummy layer of an anode electrically connected to the thin film transistor on the top surface of the first planarization layer, Forming a second conductive layer and a third conductive layer of the pad electrode covering the first conductive layer of the first conductive layer, and forming the remaining layer of the anode on the dummy layer of the anode.

According to another aspect of the present invention, an OLED display manufacturing method further includes forming a first auxiliary wiring on the first planarization layer, wherein the first auxiliary wiring is formed simultaneously with the same material as the dummy layer and the anode .

A method of manufacturing an organic light emitting display device according to another embodiment of the present invention is provided. A method of manufacturing an organic light emitting display includes providing a substrate defined as a display area and a pad area, a thin film transistor having an active layer, a gate electrode, and a source electrode and a drain electrode on a display area of the substrate, Forming a first planarization layer to cover the thin film transistor, forming a dummy electrode electrically connected to the thin film transistor on the top surface of the first planarization layer, Forming a second conductive layer and a third conductive layer of the pad electrode covering the first conductive layer of the pad electrode, forming a second planarization layer to cover the dummy electrode and the first auxiliary wiring, And forming an anode electrically connected to the dummy electrode on the upper surface of the second planarization layer, and a second auxiliary wiring electrically connected to the first auxiliary wiring, .

According to another aspect of the present invention, the step of forming the second conductive layer and the third conductive layer of the pad electrode is performed simultaneously with the step of simultaneously forming the dummy electrode and the first auxiliary wiring.

According to another aspect of the present invention, the second conductive layer of the pad electrode is formed of the same material as the dummy electrode and the first auxiliary wiring, and the third conductive layer of the pad electrode is formed of the same material as a part of the second auxiliary wiring .

The details of other embodiments are included in the detailed description and drawings.

The present invention can minimize the damage or corrosion of the pad electrode due to the exposure of the silver alloy layer of the pad electrode to the outside.

Further, the present invention can improve the reliability of the pad electrode and further improve the reliability of the organic light emitting display.

Furthermore, the present invention can minimize the occurrence of non-uniformity in luminance in the organic EL display of the top emission type, particularly, the large-area top emission organic EL display.

The effects according to the present invention are not limited by the contents exemplified above, and more various effects are included in the specification.

1 is a schematic plan view of an OLED display according to an embodiment of the present invention.
2 is a schematic cross-sectional view of an OLED display according to II-II ', II "- II''' of FIG.
3 is a schematic cross-sectional view of an OLED display according to another embodiment of the present invention.
4 is a schematic cross-sectional view of an OLED display according to another embodiment of the present invention.
FIG. 5 is a flowchart illustrating a method of manufacturing an organic light emitting display according to an embodiment of the present invention. Referring to FIG.
6A to 6D are schematic process sectional views illustrating a method of manufacturing an organic light emitting display according to an embodiment of the present invention.
7 is a flowchart illustrating a method of manufacturing an organic light emitting display according to another embodiment of the present invention.
FIGS. 8A to 8C are schematic process sectional views illustrating a method of manufacturing an organic light emitting display according to another embodiment of the present invention.
FIGS. 9A to 9C are schematic process cross-sectional views illustrating a method of manufacturing an organic light emitting display according to another embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but is capable of many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. Where the terms "comprises", "having", "done", and the like are used in this specification, other portions may be added unless "only" is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

An element or layer is referred to as being another element or layer "on ", including both intervening layers or other elements directly on or in between.

Although the first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

Like reference numerals refer to like elements throughout the specification.

The sizes and thicknesses of the individual components shown in the figures are shown for convenience of explanation and the present invention is not necessarily limited to the size and thickness of the components shown.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other partially or wholly and technically various interlocking and driving are possible and that the embodiments may be practiced independently of each other, It is possible.

Various embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

1 is a schematic plan view of an OLED display according to an embodiment of the present invention. 2 is a schematic cross-sectional view of an OLED display according to II-II ', II "- II' '' of FIG. 1 and 2, the OLED display 100 includes a substrate 110, a thin film transistor 120, an organic light emitting diode 130, a pad electrode 150, and a first auxiliary wiring 140 do. In FIG. 1, only the pad area PA and the display area DA of the substrate 110 are schematically illustrated for convenience of explanation. In this specification, the organic light emitting display 100 is a top emission organic light emitting display.

The substrate 110 is a substrate 110 for supporting and protecting various components of the OLED display 100. The substrate 110 may be formed of an insulating material, for example, glass or plastic, but it is not limited thereto and may be formed of various materials.

The substrate 110 is defined as a display area DA and a pad area PA. That is, the substrate 110 has a display area DA and a pad area PA. The display area DA is a region where an image is displayed in the organic light emitting display 100 and various driving elements for driving the organic light emitting element 130 and the organic light emitting element 130 are disposed in the display area DA . In FIG. 2, only the driving thin film transistor 120 among the various driving devices is shown for convenience of explanation. The pad area PA is a region in which the pad electrode 150 is formed and is an area where the pad electrode 150 and an external module such as a flexible printed circuit board (FPCB) or a chip on film (COF) . The pad area PA may be defined on one side of the display area DA as shown in Fig. 1, or may be defined on both sides of the display area DA.

A thin film transistor 120 is formed on a substrate 110. A thin film transistor is formed in the display area DA of the substrate 110. [ Specifically, a buffer layer 111 is formed on the substrate 110, and an active layer 122 on which a channel of the thin film transistor 120 is formed is formed on the buffer layer 111. The active layer 122 may be formed on the buffer layer 111 as shown in FIG. 2 or formed directly on the substrate 110 when the buffer layer 111 is not used. A gate insulating layer 112 is formed on the active layer 122 to isolate the active layer 122 and the gate electrode 121 from each other. A gate electrode 121 is formed on the gate insulating layer 112. An interlayer insulating layer 113 is formed on the gate electrode 121. An interlayer insulating layer 113 is formed on the entire surface of the substrate 110 and is formed to have a contact hole for opening a partial area of the active layer 122. A source electrode 123 and a drain electrode 124 are formed on the interlayer insulating layer 113 and each of the source electrode 123 and the drain electrode 124 is electrically connected to the active layer 122 through a contact hole . The source electrode 123 and the drain electrode 124 may be formed of various conductive materials, for example, a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer. A passivation layer 114 for protecting the thin film transistor 120 is formed on the source electrode 123 and the drain electrode 124. [ 2, the thin film transistor 120 has a coplanar structure for the sake of convenience. However, the thin film transistor 120 may be formed in an inverted staggered structure .

A first planarization layer 115 is formed on the thin film transistor 120. The first planarization layer 115 is an insulating layer for planarizing the upper portion of the thin film transistor 120. The first planarization layer 115 is formed only in the display area DA and is not formed in the pad area PA.

The organic light emitting device 130 is formed on the first planarization layer 115. The organic light emitting device 130 includes an anode 137, an organic light emitting layer 138, and a cathode 139.

The anode 137 is composed of at least two conductive layers. Referring to FIG. 2, the anode 137 includes a structure in which a lower ITO layer 131, a silver alloy layer 132, and an upper ITO layer 133 are stacked. The upper ITO layer 133 serves to transmit holes to the organic light emitting layer 138 formed on the anode 137 and the silver alloy layer 132 serves to transmit light emitted from the organic light emitting layer 138 to the upper As shown in FIG. The silver alloy layer 132 may be formed of various silver conductive conductive materials, but not limited thereto, and other conductive materials having excellent reflectivity may be formed between the upper ITO layer 133 and the lower ITO layer 131.

The anode 137 includes a dummy layer that is in contact with the bottom surface of the lower ITO layer 131 and is electrically connected to the lower ITO layer 131. The dummy layer 134 is electrically connected to the thin film transistor 120 through the contact hole of the first planarization layer 115. That is, the dummy layer 134 electrically connects the thin film transistor 120 and the lower ITO layer 131.

The dummy layer 134 is composed of a plurality of layers. Referring to FIG. 2, the dummy layer 134 includes a bottom layer 135 and an upper layer 136. The lower layer 135 may be formed by stacking a copper (Cu) layer on a molybdenum-titanium (MoTi) alloy layer and the lower layer 135 may be formed of the same material as the source electrode 123 and the drain electrode 124 . The upper layer 136 is formed on the lower layer 135 and may be formed to cover the lower layer 135 as shown in FIG. However, the upper layer 136 may be formed only on the upper surface of the lower layer 135 without limitation thereto. The upper layer 136 may be formed of a molybdenum-titanium (MoTi) alloy.

A first auxiliary wiring 140 is formed on the first planarization layer 115. Specifically, the first auxiliary wiring 140 is located on the same plane as the anode 137 on the first planarization layer 115. Referring to FIG. 2, the first auxiliary wiring 140 includes a first layer 141, a second layer 142 on the first layer 141, a third layer 143 on the second layer 142, And a fourth layer 144 on the third layer and a fifth layer 145 on the fourth layer 144. [ The first layer 141 of the first auxiliary wiring 140 is formed of the same material as the lower layer 135 of the dummy layer 134 of the anode 137 and the second layer 142 of the first auxiliary wiring 140 Is formed of the same material as the upper layer 136 of the dummy layer 134 of the anode 137 and the third layer 143 of the first auxiliary wiring 140 is formed of the same material as the lower ITO layer 131 of the anode 137. [ The fourth layer 144 of the first auxiliary wiring 140 is formed of the same material as the silver alloy layer 132 of the anode 137 and the fifth layer 144 of the first auxiliary wiring 140 is formed of the same material as the silver alloy layer 132 of the anode 137, The layer 145 may be formed of the same material as the upper ITO layer 133 of the anode 137.

In the case of the top emission type organic light emitting display, a transparent electrode or a transflective electrode is used as a cathode to emit light emitted from the organic light emitting layer. In order to obtain a sufficient light transmittance through the cathode, the cathode needs to be formed very thin. Therefore, the cathode is made of ITO having a sufficiently thin thickness or an alloy of silver (Ag) and magnesium (Mg) so that the cathode is transparent. However, the reduction in the thickness of the cathode increases the electrical resistance of the cathode electrode. As a result, the reduction in the thickness of the cathode causes a voltage drop (i.e., an IR drop) in a part of the organic light emitting display device, in particular, in the central part, and causes non-uniform luminance across the screen. In particular, the voltage drop phenomenon is exacerbated as the size of the display device increases. In the organic light emitting diode display 100 according to an embodiment of the present invention, the first auxiliary wiring 140 electrically connected to the cathode 139 is employed, Can be minimized.

A bank layer 116 is formed on the first planarization layer 115. The bank layer 116 may be formed to cover the edges of the anode 137 and the first auxiliary wiring 140. A part of the region of the anode 137 opened by the bank layer 116 may be defined as a light emitting region.

An organic light emitting layer 138 is formed on the anode 137. The organic light emitting layer 138 may be formed on a part of the anode 137 opened by the bank layer 116. [ In this case, the organic light emitting layer 138 may be one of a red organic light emitting layer, a green organic light emitting layer, and a blue organic light emitting layer. Although not shown in FIG. 2, the organic light emitting layer 138 may be a white organic light emitting layer. In this case, the white organic light emitting layer may be formed on the front surface of the substrate 110 in the display area DA.

A cathode 139 is formed on the organic light emitting layer 138. The cathode 139 is formed of a material having a high work function and is formed on the front surface of the substrate 110 in the display area DA. The cathode 139 is electrically connected to the first auxiliary wiring 140. 2, a portion of the first auxiliary wiring 140 is opened by the bank layer 116 and the cathode 139 and the first auxiliary wiring 140 are electrically connected through the corresponding region. However, Without being restricted, the cathode 139 and the first auxiliary wiring 140 can be electrically connected in various ways.

Referring to FIG. 2, a buffer layer 111 and an interlayer insulating layer 113 are formed on a substrate 110 in a pad region PA. If the buffer layer 111 is omitted, the interlayer insulating layer 113 may be directly formed on the substrate 110.

A pad electrode 150 is formed on the substrate 110 in the pad region PA. Specifically, the pad electrode 150 is formed on the interlayer insulating layer 113. The pad electrode 150 is composed of a plurality of conductive layers. Referring to FIG. 2, the pad electrode 150 includes a first conductive layer 151, a second conductive layer 152 on the first conductive layer 151, and a third conductive layer 153 on the second conductive layer 152 .

The first conductive layer 151 of the pad electrode 150 is formed of the same material as the source electrode 123 and the drain electrode 124 of the thin film transistor 120 formed in the display area DA. That is, the first conductive layer 151 may have a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer. On the first conductive layer 151, a passivation layer 114 is formed. The passivation layer 114 includes an opening and the opening of the passivation layer 114 is located on a portion of the first conductive layer 151.

The second conductive layer 152 of the pad region PA is formed to cover the first conductive layer 151 of the pad region PA. The second conductive layer 152 is electrically connected to the first conductive layer 151 through the opening of the passivation layer 114. The second conductive layer 152 may be formed of the same material as the lower layer 135 of the dummy layer 134 of the anode 137 and the first layer 141 of the first auxiliary wiring 140. That is, the second conductive layer 152 may be formed by stacking a copper (Cu) layer on a molybdenum-titanium (MoTi) alloy layer.

The third conductive layer 153 of the pad region PA is formed to cover the first conductive layer 151 of the pad region PA. In addition, the third conductive layer 153 of the pad region PA is formed to cover the second conductive layer 152 of the pad region PA. Referring to FIG. 2, the third conductive layer 153 is formed to surround the side surface of the second conductive layer 152, so that the second conductive layer 152 is not exposed to the outside. The third conductive layer 153 may be formed of the same material as the upper layer 136 of the dummy layer 134 of the anode 137 and the second layer 142 of the first auxiliary wiring 140. That is, the third conductive layer 153 may be formed of a molybdenum-titanium (MoTi) alloy layer.

The silver electrode layer and the ITO layer used in the anode 137 are not used as the pad electrode 150 in the OLED display 100 according to the embodiment of the present invention, A drain electrode 124, and a first auxiliary wiring 140 are used as the pad electrode 150. The first auxiliary wiring 140, The third conductive layer 153 which is the uppermost layer of the pad electrode 150 is formed to cover the first conductive layer 151 and the second conductive layer 152 of the pad electrode 150, The layer 153 is formed to cover both the top and side surfaces of the second conductive layer 152. Here, the second conductive layer 152, which is a molybdenum-titanium (MoTi) alloy used as the third conductive layer 153 and covers the uppermost layer of copper (Cu), covers the entire surface of the second conductive layer 152, The second conductive layer 152 is prevented from being lost during the collective etching process of the upper ITO layer 133, the silver alloy layer 132 and the lower ITO layer 131 of the anode 137, It is possible to prevent the electrode 150 from being formed. The second conductive layer 152 and the third conductive layer 153 of the pad electrode 150 may be formed of the same material as the first auxiliary wiring 140 to more easily form the pad electrode 150 have.

3 is a schematic cross-sectional view of an OLED display according to another embodiment of the present invention. The organic light emitting diode display 300 shown in FIG. 3 includes an anode 337, a dummy electrode 360, and a first auxiliary wiring 340 as compared with the OLED display 100 shown in FIGS. 1 and 2 Only the second auxiliary wiring 370 and the second planarization layer 317 are added, and the other components are substantially the same, so that redundant description is omitted.

Referring to FIG. 3, a dummy electrode 360 is formed on the first planarization layer 115. The dummy electrode 360 is formed on the upper surface of the first planarization layer 315 to electrically connect the thin film transistor 120 and the anode 337. The dummy electrode 360 is composed of a plurality of electrodes. Referring to FIG. 3, the dummy electrode 360 includes a lower electrode 361 and an upper electrode 362. The lower electrode 361 may have a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer and the lower electrode 361 may be formed in the same manner as the source electrode 123 and the drain electrode 124 Or may be formed of a material. The upper electrode 362 is formed on the lower electrode 361 and may be formed to cover the lower electrode 361 as shown in FIG. However, the present invention is not limited to this, and the upper electrode 362 may be formed only on the upper surface of the lower electrode 361. The upper electrode 362 may be formed of a molybdenum-titanium (MoTi) alloy.

A first auxiliary wiring 340 is formed on the first planarization layer 115. The first auxiliary wiring 340 is formed on the upper surface of the first planarization layer 115 and is formed of the same material on the same plane as the dummy electrode 360. The first auxiliary wiring 340 is composed of a first layer 341 and a second layer 342 on the first layer 341. The first layer 341 of the first auxiliary wiring 340 is formed of the same material as the lower electrode 361 of the dummy electrode 360 and the second layer 342 of the first auxiliary wiring 340 is formed of the same material as the dummy electrode 360. [ May be formed of the same material as the upper electrode 362 of the first electrode 360.

A second planarization layer 317 is formed on the dummy electrode 360 and the first auxiliary wiring 340. The second planarization layer 317 is an insulating layer for planarizing the dummy electrode 360 and the first auxiliary wiring 340. The second planarization layer 317 may be formed of the same material as the first planarization layer 315. The second planarization layer 317 is formed only in the display area DA and is not formed in the pad area PA.

An anode 337 of the organic light emitting diode 330 is formed on the second planarization layer 317. The anode 337 is formed on the upper surface of the second planarization layer 317 and is electrically connected to the thin film transistor 320 through the dummy electrode 360. The anode 337 includes a structure in which a lower ITO layer 331, a silver alloy layer 332, and an upper ITO layer 333 are stacked.

And a second auxiliary wiring 370 is formed on the second planarization layer 317. [ Specifically, the second auxiliary wiring 370 is formed on the upper surface of the second planarization layer 317 and is electrically connected to the first auxiliary wiring 340. The second auxiliary wiring 370 is composed of a first layer 371, a second layer 372 on the first layer 371 and a third layer 373 on the second layer 372. The second auxiliary wiring 370 may be formed of the same material on the same plane as the anode 337. The first layer 371 of the second auxiliary wiring 370 is formed of the same material as the lower ITO layer 331 of the anode 337 and the second layer 372 of the second auxiliary wiring 370 is formed of the same material as the lower ITO layer 331 of the anode 337. [ The third layer 373 of the second auxiliary wiring 370 is formed of the same material as the silver alloy layer 332 of the anode 337 and the third layer 373 of the second auxiliary wiring 370 is formed of the same material as the upper ITO layer 333 of the anode 337 . The organic light emitting display 300 according to another embodiment of the present invention employs a first auxiliary wiring 340 and a second auxiliary wiring 370 electrically connected to the cathode 339, The resistance of the cathode 339 in the display device 300 can be further reduced, and uniform image quality characteristics can be ensured.

A bank layer 316 is formed on the second planarization layer 317 and an organic light emitting layer 338 of the organic light emitting element 330 is formed on a part of the anode 337 opened by the bank layer 316 do. The cathode 339 of the organic light emitting diode 330 is formed on the organic light emitting layer 338 and the cathode 339 is electrically connected to the second auxiliary wiring 370 through a part of the second auxiliary wiring 370 opened by the bank layer 316, And is electrically connected to the auxiliary wiring 370.

A pad electrode 350 is formed on the substrate 110 in the pad region PA. Specifically, the pad electrode 350 is formed on the interlayer insulating layer 113. The pad electrode 350 is composed of a plurality of conductive layers. 3, the pad electrode 350 includes a first conductive layer 351, a second conductive layer 352 on the first conductive layer 351, and a third conductive layer 353 on the second conductive layer 352. [ . The first conductive layer 351 of the pad electrode 350 is formed of the same material as the source electrode 123 and the drain electrode 124 of the thin film transistor 320 formed in the display area DA. The second conductive layer 352 of the pad region PA is formed of the same material as the lower electrode 361 of the dummy electrode 360 and the first layer 341 of the first auxiliary wiring 340, The third conductive layer 353 of the first auxiliary wiring 340 is formed of the same material as the upper electrode 362 of the dummy electrode 360 and the second layer 342 of the first auxiliary wiring 340. The pad electrode 350 of FIG. 3 is different from the pad electrode 350 of FIG. 2 in that only a component formed of the same material as the second conductive layer 352 and the third conductive layer 353 of the pad electrode 350 So that redundant description will be omitted.

The silver electrode layer and the ITO layer used in the anode 337 are not used as the pad electrode 350 in the OLED display 300 according to another embodiment of the present invention, And the drain electrode 124 and the conductive material used as the first auxiliary wiring 340 are used as the pad electrode 350. The third conductive layer 353 which is the uppermost layer of the pad electrode 350 is formed so as to cover the first conductive layer 351 and the second conductive layer 352 of the pad electrode 350, A layer 353 is formed to cover both the top and side surfaces of the second conductive layer 352. The molybdenum-titanium (MoTi) alloy used as the third conductive layer 353 covers the entire surface of the second conductive layer 352 formed of copper (Cu) The second conductive layer 352 is prevented from being lost during the collective etching process of the upper ITO layer 333, the silver alloy layer 332 and the lower ITO layer 331 of the anode 337, It is possible to prevent the electrode 350 from being formed. The second conductive layer 352 and the third conductive layer 353 of the pad electrode 350 may be formed of the same material as the first auxiliary wiring 340 to more easily form the pad electrode 350 have.

4 is a schematic cross-sectional view of an OLED display according to another embodiment of the present invention. The organic light emitting diode display 400 shown in FIG. 4 is different from the OLED display 300 shown in FIG. 3 in that the anode 437, the dummy electrode 360, the first auxiliary wiring 440, The wiring 470 is different, and the other components are substantially the same, so redundant description is omitted.

Referring to FIG. 4, a dummy electrode 460 is formed on the first planarization layer 115. The dummy electrode 460 is formed on the upper surface of the first planarization layer 115 to electrically connect the thin film transistor 120 and the anode 437. The dummy electrode 460 is composed of a single electrode. The dummy electrode 460 may be formed by stacking a molybdenum-titanium (MoTi) alloy layer, a copper (Cu) layer, and a molybdenum-titanium (MoTi) And the drain electrode 424 may be formed of the same material.

A first auxiliary wiring 440 is formed on the first planarization layer 115. The first auxiliary wiring 440 is formed on the upper surface of the first planarization layer 115 and is formed of the same material on the same plane as the dummy electrode 460. The first auxiliary wiring 440 is composed of a single layer. The first auxiliary wiring 440 may be formed of the same material as the dummy electrode 460.

A second planarization layer 417 is formed on the dummy electrode 460 and the first auxiliary wiring 440. The second planarization layer 417 is an insulating layer for planarizing the dummy electrode 460 and the first auxiliary wiring 440. The second planarization layer 417 may be formed of the same material as the first planarization layer 415. The second planarization layer 417 is formed only in the display region DA and is not formed in the pad region PA.

An anode 437 of the organic light emitting diode 430 is formed on the second planarization layer 417. The anode 437 is formed on the upper surface of the second planarization layer 417 and is electrically connected to the thin film transistor 420 through the dummy electrode 460. The anode 437 includes a structure in which a dummy layer 434, a lower ITO layer 431, a silver alloy layer 432, and an upper ITO layer 433 are stacked. The dummy layer 434 of the anode 437 is formed to be in contact with the rear surface of the lower ITO layer 431 and is electrically connected to the dummy electrode 460. The dummy layer 434 of the anode 437 may be formed of a molybdenum-titanium (MoTi) alloy.

A second auxiliary wiring 470 is formed on the second planarization layer 417. [ Specifically, the second auxiliary wiring 470 is formed on the upper surface of the second planarization layer 417 and is electrically connected to the first auxiliary wiring 440. The second auxiliary wiring 470 is formed on the first layer 471, the second layer 472 on the first layer 471, the third layer 473 on the second layer 472, and the third layer 473 on the third layer 473. [ And a fourth layer 474. The second auxiliary wiring 470 may be formed of the same material on the same plane as the anode 437. That is, the first layer 471 of the second auxiliary wiring 470 is formed of the same material as the lower ITO layer 431 of the anode 437, and the second layer 472 of the second auxiliary wiring 470 is formed of the same material The third layer 473 of the second auxiliary wiring 470 is formed of the same material as the silver alloy layer 432 of the anode 437 and the third layer 473 of the second auxiliary wiring 470 is formed of the same material as the upper ITO layer 433 of the anode 437 And the fourth layer 474 of the second auxiliary wiring 470 may be formed of the same material as the dummy layer 434 of the anode 437. The organic light emitting diode display 400 according to another embodiment of the present invention employs the first auxiliary wiring 440 and the second auxiliary wiring 470 electrically connected to the cathode 439, It is possible to solve the problem of luminance unevenness that may occur in the light emitting display device 400. [

A bank layer 416 is formed on the second planarization layer 417 and an organic light emitting layer 438 of the organic light emitting element 430 is formed on a part of the anode 437 opened by the bank layer 416 do. The cathode 439 of the organic light emitting diode 430 is formed on the organic light emitting layer 438 and the cathode 439 is electrically connected to the second auxiliary wiring 470 through a part of the second auxiliary wiring 470 opened by the bank layer 416, And is electrically connected to the auxiliary wiring 470.

A pad electrode 450 is formed on the substrate 110 in the pad region PA. Specifically, the pad electrode 450 is formed on the interlayer insulating layer 113. The pad electrode 450 is formed of a first conductive layer 451, a second conductive layer 452 on the first conductive layer 451, and a third conductive layer 453 on the second conductive layer 452. The first conductive layer 451 of the pad electrode 450 is formed of the same material as the source electrode 423 and the drain electrode 424 of the thin film transistor 420 formed in the display area DA. The second conductive layer 452 of the pad region PA is formed of the same material as the dummy electrode 460 and the first auxiliary wiring 440 and the third conductive layer 453 of the pad region PA is formed of the same material as the anode The fourth layer 474 of the second auxiliary wiring 470 and the dummy layer 434 of the second auxiliary wiring 437 are formed of the same material. The pad electrode 450 of FIG. 4 is different from the pad electrode 350 of FIG. 3 in that only a component formed of the same material as the second conductive layer 452 and the third conductive layer 453 of the pad electrode 450 So that redundant description will be omitted.

The silver electrode layer 432 used in the anode 437 and the ITO layer are not used as the pad electrode 450 in the OLED display 400 according to another embodiment of the present invention, The same material as the electrode 423 and the drain electrode 424 and a conductive material used as the first auxiliary wiring 440 are used as the pad electrode 450. The third conductive layer 453 which is the uppermost layer of the pad electrode 450 is formed so as to cover the first conductive layer 451 and the second conductive layer 452 of the pad electrode 450, The layer 453 is formed to cover both the top surface and the side surface of the second conductive layer 452. Here, the second conductive layer 452, which is a molybdenum-titanium (MoTi) alloy used as the third conductive layer 453 and covers the uppermost layer of copper (Cu), covers the entire surface of the second conductive layer 452, The second conductive layer 452 is prevented from being lost in the collective etching process of the upper ITO layer 433, the silver alloy layer 432 and the lower ITO layer 431 of the anode 437, It is possible to prevent the electrode 450 from being formed. The second conductive layer 452 and the third conductive layer 453 of the pad electrode 450 may be formed of the same material as the first auxiliary wiring 440 and the second auxiliary wiring 470, The electrode 450 can be formed.

FIG. 5 is a flowchart illustrating a method of manufacturing an organic light emitting display according to an embodiment of the present invention. Referring to FIG. 6A to 6D are schematic process sectional views illustrating a method of manufacturing an organic light emitting display according to an embodiment of the present invention. FIGS. 6A to 6D are cross-sectional views illustrating the manufacturing process of the OLED display 100 shown in FIGS. 1 and 2, wherein a redundant description of the components described with reference to FIGS. 1 and 2 is omitted do.

First, a substrate 110 defined by a display area DA and a pad area PA is provided (S50), and an active layer 122 and a gate electrode 121 are formed on a display area DA of the substrate 110, And the first conductive layer 151 of the pad electrode 150 are simultaneously formed on the pad region PA of the substrate 110 and the thin film transistor 120 having the source electrode 123 and the drain electrode 124 (S51).

Referring to FIG. 6A, a buffer layer 111 is formed on a substrate 110 on which a display area DA and a pad area PA are defined. A buffer layer 111 is formed on the display area DA and the pad area PA.

The thin film transistor 120 is formed on the display region DA of the substrate 110. [ An active layer 122 is formed on the buffer layer 111 and a gate insulating layer 112 and a gate electrode 121 are formed on the active layer 122. [ The material for the gate insulating layer and the material for the gate electrode are formed on the entire surface of the substrate 110 when the gate insulating layer 112 and the gate electrode 121 are formed and then the material for the insulating layer and the material for the gate electrode are patterned simultaneously, A layer 112 and a gate electrode 121 are formed. An interlayer insulating layer 113 is formed on the gate insulating layer 112 and the gate electrode 121. An interlayer insulating layer 113 is formed on the display area DA and the pad area PA. A contact hole is formed in the interlayer insulating layer 113 so that the source electrode 123 and the drain electrode 124 are electrically connected to the active layer 122. Thereafter, a source electrode and a drain electrode material are formed on the entire surface of the substrate 110, and a source electrode 123 and a drain electrode 124 are formed by patterning the source and drain electrode materials. At this time, the first conductive layer 151 of the pad electrode 150 is formed on the pad region PA of the substrate 110. That is, when the source and drain electrode materials formed on the entire surface of the substrate 110 are patterned, the first conductive layer 151 of the pad electrode 150 is left in the pad area PA, The drain electrode 124 and the first conductive layer 151 of the pad electrode 150 may be formed of the same material at the same time.

Next, a first planarization layer 115 is formed to cover the thin film transistor 120 (S52), and a dummy layer (not shown) of the anode 137 electrically connected to the thin film transistor 120 is formed on the first planarization layer 115 The second conductive layer 152 and the third conductive layer 153 of the pad electrode 150 covering the first conductive layer 151 of the pad electrode 150 are simultaneously formed at step S53.

Referring to FIG. 6B, a passivation layer 114 is formed on the thin film transistor 120 to protect the thin film transistor 120. A passivation layer 114 is formed on both the display area DA and the pad area PA.

Next, a first planarization layer 115 is formed on the thin film transistor 120 to planarize the thin film transistor 120. The first planarization layer 115 is formed only in the display area DA of the substrate 110. [

The lower layer 135 of the dummy layer 134 of the anode 137 and the first layer 141 of the first auxiliary wiring 140 are formed on the first planarization layer 115 in the display area DA The second conductive layer 152 of the pad electrode 150 is formed on the interlayer insulating layer 113 in the pad region PA. Specifically, the material for the lower layer of the dummy layer 134 is formed on the first planarizing layer 115 of the display area DA and the interlayer insulating layer 113 of the pad area PA. That is, the material for the lower layer of the dummy layer 134 is formed on the front surface of the substrate 110. The lower layer material of the dummy layer 134 is then patterned to form the lower layer 135 of the dummy layer 134 and the first layer 141 of the first auxiliary wiring 140 and the second layer 141 of the pad electrode 150, Layer 152 is formed of the same material at the same time.

6C, an upper layer 136 of the dummy layer 134 is formed on the lower layer 135 of the dummy layer 134 in the display area DA, and a first layer 136 of the first auxiliary wiring 140 is formed. A second layer 142 is formed on layer 141. A third conductive layer 153 is formed on the second conductive layer 152 of the pad electrode 150 in the pad region PA. More specifically, the passivation of the first planarization layer 115 of the display area DA, the lower layer 135 of the dummy layer 134, the first layer 141 of the first auxiliary wiring 140, and the pad area PA A material for the upper layer of the dummy layer 134 is formed on the layer 114 and the second conductive layer 152 of the pad electrode 150. [ That is, the material for the upper layer of the dummy layer 134 is formed on the front surface of the substrate 110. The upper layer material of the dummy layer 134 is then patterned to form the upper layer 136 of the dummy layer 134, the second layer 142 of the first auxiliary wiring 140, and the third layer 142 of the pad electrode 150, Layer 153 is formed of the same material at the same time. The third conductive layer 153 of the pad electrode 150 is formed to cover the second conductive layer 152 of the pad electrode 150.

Then, the remaining layer of the anode 137 is formed on the dummy layer 134 of the anode 137 (S54).

6D, an ITO material, a silver alloy material, and an ITO material are sequentially formed on the dummy layer 134 of the anode 137 and the second layer 142 of the first auxiliary wiring 140. Here, the ITO material, the silver alloy material, and the ITO material are formed not only in the display area DA of the substrate 110, but also in the pad area PA of the substrate 110. Thereafter, the ITO material, the silver alloy material and the ITO material are collectively etched to form the lower ITO layer 131, the silver alloy layer 132, and the lower ITO layer 131, which are the remaining layers of the anode 137, on the dummy layer 134 of the anode 137 An upper ITO layer 133 is formed. The third layer 143, the fourth layer 144 and the fifth layer 145 of the first auxiliary wiring 140 are formed on the lower ITO layer 131 of the anode 137, (132) and the upper ITO layer (133).

A bank layer 116 is formed so as to cover the edges of the anode 137 and the first auxiliary electrode, and an organic light emitting layer 138 and a cathode 139 are sequentially formed.

In the method of fabricating an OLED display device according to an embodiment of the present invention, the pad electrode 150 may be simultaneously formed when the first auxiliary wiring 140 is formed. Accordingly, the pad electrode 150 may be formed without a separate process for forming the pad electrode 150. The third conductive layer 153 of the pad electrode 150 formed of a molybdenum-titanium (MoTi) alloy without using the silver alloy layer 132 as the pad electrode 150 is electrically connected to the second conductive Layer 152 so that it is possible to secure the pad electrode 150 having improved reliability.

7 is a flowchart illustrating a method of manufacturing an organic light emitting display according to another embodiment of the present invention. FIGS. 8A to 8C are schematic process sectional views illustrating a method of manufacturing an organic light emitting display according to another embodiment of the present invention. 8A to 8C are cross-sectional views illustrating the manufacturing process of the organic light emitting diode display 300 shown in FIG. 3, and overlapping descriptions of the components described with reference to FIG. 3 are omitted.

First, a substrate 110 defined by a display area DA and a pad area PA is provided (S70), and an active layer 122 and a gate electrode 121 are formed on a display area DA of the substrate 110, And the first conductive layer 351 of the pad electrode 350 are simultaneously formed on the pad region PA of the substrate 110 and the thin film transistor 120 having the source electrode 123 and the drain electrode 124 (S71), and a first planarization layer 115 is formed to cover the thin film transistor 120 (S72). Since steps S70, S71, and S72 are substantially the same as steps S60, S61, and S62, redundant description will be omitted.

Subsequently, a dummy electrode 360 and a first auxiliary wiring 340 electrically connected to the thin film transistor 120 are simultaneously formed on the upper surface of the first planarization layer 115 (S73) The second conductive layer 352 and the third conductive layer 353 of the pad electrode 350 covering the layer 351 are formed (S74).

8A, the lower electrode 361 of the dummy electrode 360 and the first layer 341 of the first auxiliary wiring 340 are formed on the first planarization layer 115 in the display area DA And the second conductive layer 352 of the pad electrode 350 is formed on the interlayer insulating layer 113 in the pad region PA. Specifically, the lower electrode material of the dummy electrode 360 is formed on the first planarization layer 115 of the display area DA and the interlayer insulating layer 113 of the pad area PA. That is, the lower electrode material of the dummy electrode 360 is formed on the front surface of the substrate 110. Subsequently, the lower electrode material of the dummy electrode 360 is patterned to form the lower electrode 361 of the dummy electrode 360, the first layer 341 of the first auxiliary wiring 340, and the first electrode 342 of the pad electrode 350 2 conductive layer 352 are simultaneously formed from the same material.

8B, an upper electrode 362 is formed on the lower electrode 361 of the dummy electrode 360 in the display area DA, and a first layer 341 of the first auxiliary wiring 340 is formed. A second layer 342 is formed. A third conductive layer 353 is formed on the second conductive layer 352 of the pad electrode 350 in the pad region PA. More specifically, the first planarization layer 115 of the display area DA, the lower electrode 361 of the dummy electrode 360, the first layer 341 of the first auxiliary wiring 340, The upper electrode material of the dummy electrode 360 is formed on the passivation layer 114 and the second conductive layer 352 of the pad electrode 350. That is, the upper electrode material of the dummy electrode 360 is formed on the front surface of the substrate 110. The upper electrode 362 of the dummy electrode 360 and the second layer 342 of the first auxiliary wiring 340 and the pad electrode 350 of the dummy electrode 360 are patterned to form the upper electrode 362, 3 conductive layer 353 are simultaneously formed from the same material. The third conductive layer 353 of the pad electrode 350 is formed to cover the second conductive layer 352 of the pad electrode 350.

The second planarization layer 317 is formed to cover the dummy electrode 360 and the first auxiliary wiring 340 in step S75 so that the dummy electrode 360 is electrically connected to the upper surface of the second planarization layer 317 The anode 337 and the second auxiliary wiring 370 electrically connected to the first auxiliary wiring 340 are formed (S76).

Referring to FIG. 8C, a second planarization layer 317 is formed to planarize the dummy electrode 360 and the first auxiliary wiring 340. The second planarization layer 317 is formed only in the display area DA.

Next, an ITO material, a silver alloy material, and an ITO material are sequentially formed on the second planarization layer 317. Here, the ITO material, the silver alloy material, and the ITO material are formed not only in the display area DA of the substrate 110, but also in the pad area PA of the substrate 110. Thereafter, the ITO material, the silver alloy material and the ITO material are collectively etched to form a lower ITO layer 331, a silver alloy layer 332 and an upper ITO layer 333 of the anode 337 on the second planarization layer 317 The first layer 371, the second layer 372 and the third layer 373 of the second auxiliary wiring 370 are formed on the lower ITO layer 331 of the anode 337, Is formed simultaneously with the alloy layer 332 and the upper ITO layer 333.

In the method of fabricating an OLED display device according to another embodiment of the present invention, the pad electrode 350 may be simultaneously formed when the first auxiliary wiring 340 is formed. Accordingly, the pad electrode 350 can be formed without a separate process for forming the pad electrode 350. [ The third conductive layer 353 of the pad electrode 350 formed of a molybdenum-titanium (MoTi) alloy without using the silver alloy layer 332 as the pad electrode 350 is electrically connected to the second conductive Layer 352 so that it is possible to secure the pad electrode 350 having improved reliability.

FIGS. 9A to 9C are schematic process cross-sectional views illustrating a method of manufacturing an organic light emitting display according to another embodiment of the present invention. FIGS. 9A to 9C are process cross-sectional views for explaining a method of manufacturing the organic light emitting display 400 shown in FIG. 4, and redundant description of the components described with reference to FIG. 4 is omitted.

First, a substrate 110 defined by a display area DA and a pad area PA is provided (S70), and an active layer 122 and a gate electrode 121 are formed on a display area DA of the substrate 110, And the first conductive layer 451 of the pad electrode 450 are simultaneously formed on the pad region PA of the substrate 110 and the thin film transistor 120 having the source electrode 123 and the drain electrode 124 (S71), and a first planarization layer 115 is formed to cover the thin film transistor 120 (S72). Since steps S70, S71, and S72 are substantially the same as steps S60, S61, and S62, redundant description will be omitted.

Subsequently, a dummy electrode 460 and a first auxiliary wiring 440 electrically connected to the thin film transistor 120 are simultaneously formed on the upper surface of the first planarization layer 115 (S73) The second conductive layer 452 and the third conductive layer 453 of the pad electrode 450 covering the layer 451 are formed (S74) so as to cover the dummy electrode 460 and the first auxiliary wiring 440 A second planarization layer 417 is formed on the second planarization layer 417 and an anode 437 electrically connected to the dummy electrode 460 is formed on an upper surface of the second planarization layer 417, An auxiliary wiring 470 is formed (S76).

9A, a dummy electrode 460 and a first auxiliary wiring 440 are formed on the first planarizing layer 115 in the display area DA and the interlayer insulating layer 113 is formed in the pad area PA. The second conductive layer 452 of the pad electrode 450 is formed. Specifically, a dummy electrode material is formed on the first planarizing layer 115 of the display area DA and the interlayer insulating layer 113 of the pad area PA. That is, the material for the dummy electrode is formed on the front surface of the substrate 410. Thereafter, the dummy electrode material is patterned to form the dummy electrode 460, the first auxiliary wiring 440, and the second conductive layer 452 of the pad electrode 450 simultaneously from the same material.

Referring to FIG. 9B, a second planarization layer 417 is formed to planarize the dummy electrode 460 and the first auxiliary wiring 440. The second planarization layer 417 is formed only in the display area DA.

The dummy layer 434 of the anode 437 and the fourth layer 474 of the second auxiliary wiring 470 are formed on the second planarization layer 417 in the display area DA. In addition, a third conductive layer 453 is formed on the second conductive layer 452 of the pad electrode 450 in the pad region PA. Specifically, a pile of anodes 437 is formed on the second planarization layer 417 of the display area DA, the passivation layer 414 of the pad area PA, and the second conductive layer 452 of the pad electrode 450. [ Layer material is formed. That is, the material for the dummy layer of the anode 437 is formed on the front surface of the substrate 410. The dummy layer 434 of the anode 437, the fourth layer 474 of the second auxiliary wiring 470 and the third conductive layer 453 of the pad electrode 450 are patterned at the same time Are formed of the same material. The third conductive layer 453 of the pad electrode 450 is formed to cover the second conductive layer 452 of the pad electrode 450.

Next, an ITO material, a silver alloy material, and an ITO material are sequentially formed on the second planarizing layer 417. Here, the ITO material, the silver alloy material, and the ITO material are formed not only in the display area DA of the substrate 410, but also in the pad area PA of the substrate 110. The lower ITO layer 431 of the anode 437, the silver alloy layer 432 and the upper ITO layer 432 of the anode 437 are formed on the dummy layer 434 of the anode 437 by collectively etching the ITO material, silver alloy material and ITO material. The second layer 372 and the third layer 372 of the second auxiliary wiring 470 are formed on the fourth layer of the second auxiliary wiring 470 in the batch etching process, The silver alloy layer 432 and the upper ITO layer 433 of the anode 437 are simultaneously formed.

In the method of fabricating an OLED display device according to another embodiment of the present invention, the pad electrode 450 may be simultaneously formed when the first auxiliary wiring 440 is formed. Accordingly, the pad electrode 450 may be formed without a separate process for forming the pad electrode 450. [ The third conductive layer 453 of the pad electrode 450 formed of a molybdenum-titanium (MoTi) alloy without using the silver alloy layer 432 is used as the pad electrode 450, Layer 452 so that it is possible to secure the pad electrode 450 having improved reliability.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100, 300, 400: organic light emitting display
110: substrate
111: buffer layer
112: gate insulating layer
113: interlayer insulating layer
114: Passivation layer
115: first planarization layer
116, 316, 416: bank layer
317, 417: second planarization layer
120: thin film transistor
121: gate electrode
122: active layer
123: source electrode
124: drain electrode
130, 330, 430: organic light emitting element
131, 331, 431: Lower ITO layer
132, 332, 432: Silver alloy layer
133, 333, 433: upper ITO layer
134, 434: a dummy layer
135:
136: Upper layer
137, 337, 437: anode
138, 338, 438: organic light emitting layer
139, 339, 439: cathode
140, 340, 440: first auxiliary wiring
141, 341: the first layer of the first auxiliary wiring
142, 342: second layer of the first auxiliary wiring
143: Third layer of the first auxiliary wiring
144: fourth layer of the first auxiliary wiring
145: fifth layer of the first auxiliary wiring
150, 350, 450: pad electrode
151, 351, 451: a first conductive layer
152, 352, 452: a second conductive layer
153, 353, 453: a third conductive layer
360, 460: dummy electrode
361: Lower electrode
362: upper electrode
370, 470: Second auxiliary wiring
371, 471: the first layer of the second auxiliary wiring
372, 472: the second layer of the second auxiliary wiring
373, 473: the third layer of the second auxiliary wiring
474: fourth layer of the second auxiliary wiring
DA: Display area
PA: pad area

Claims (26)

A substrate defined by a display area and a pad area;
A thin film transistor located on the substrate in the display region and including an active layer, a gate electrode, and a source electrode and a drain electrode;
An anode electrically connected to the thin film transistor, the anode comprising at least two conductive layers; And
And a pad electrode formed on the substrate in the pad region and composed of a plurality of conductive layers,
Wherein the first conductive layer of the pad electrode is made of the same material as the source electrode and the drain electrode,
Wherein the second conductive layer of the pad electrode and the third conductive layer of the pad electrode are formed to cover the first conductive layer. The method according to claim 1,
And the third conductive layer of the pad electrode is formed to cover the second conductive layer of the pad electrode. The method according to claim 1,
Wherein the anode includes a lower ITO (Indium Tin Oxide) layer, a silver alloy layer, and an upper ITO layer. The method of claim 3,
Wherein the anode further comprises a dummy layer electrically connected to the bottom ITO layer in contact with the backside of the bottom ITO layer. 5. The method of claim 4,
Wherein the dummy layer is comprised of a plurality of layers,
The lower layer of the plurality of layers has a structure in which a copper (Cu) layer is laminated on a molybdenum-titanium (MoTi) alloy layer,
Wherein the upper layer of the plurality of layers is formed of a molybdenum-titanium (MoTi) alloy and covers the lower layer. 5. The method of claim 4,
Wherein the dummy layer is formed of the same material as the second conductive layer of the pad electrode and the third conductive layer of the pad electrode. The method according to claim 1,
Wherein the source electrode and the drain electrode have a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer. The method according to claim 1,
And a first planarization layer formed to cover the thin film transistor. 9. The method of claim 8,
And a first auxiliary wiring formed on an upper surface of the first planarization layer and positioned on the same plane as the anode. 10. The method of claim 9,
Wherein the second conductive layer of the pad electrode and the third conductive layer of the pad electrode are formed of the same material as the first auxiliary wiring. A substrate defined by a display area and a pad area;
A thin film transistor located on the substrate in the display region and including an active layer, a gate electrode, and a source electrode and a drain electrode;
A first planarization layer and a second planarization layer disposed on the substrate in the display region and formed to cover the thin film transistor;
An anode electrically connected to the thin film transistor and formed on an upper surface of the second planarization layer;
A dummy electrode formed on the first planarization layer and electrically connecting the thin film transistor and the anode;
A first auxiliary wiring formed of the same material on the same plane as the dummy electrode; And
And a pad electrode located on the substrate and composed of a plurality of conductive layers,
Wherein the first conductive layer of the pad electrode is made of the same material as the source electrode and the drain electrode,
Wherein the second conductive layer of the pad electrode and the third conductive layer of the pad electrode are formed to cover the first conductive layer. 12. The method of claim 11,
And the third conductive layer of the pad electrode is formed to cover the second conductive layer of the pad electrode. 12. The method of claim 11,
Wherein the source electrode and the drain electrode have a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer. 12. The method of claim 11,
Wherein the dummy electrode is composed of a plurality of electrodes,
And the upper electrode of the plurality of electrodes covers the lower electrode. 15. The method of claim 14,
The second conductive layer of the pad electrode is formed of the same material as the lower electrode of the dummy electrode,
And the third conductive layer of the pad electrode is formed of the same material as the upper electrode of the dummy electrode. 12. The method of claim 11,
Wherein the dummy electrode is composed of a single electrode,
Wherein the dummy electrode is formed of the same material as the second conductive layer of the pad electrode. 12. The method of claim 11,
And a second auxiliary wiring formed on an upper surface of the second planarization layer and electrically connected to the first auxiliary wiring. 18. The method of claim 17,
And the second auxiliary wiring is formed of the same material on the same plane as the anode. 12. The method of claim 11,
Wherein the anode includes a lower ITO (Indium Tin Oxide) layer, a silver alloy layer, and an upper ITO layer. 20. The method of claim 19,
Wherein the anode further comprises a dummy layer electrically connected to the dummy electrode in contact with the backside of the lower ITO layer. 21. The method of claim 20,
Wherein the dummy layer is formed of a molybdenum-titanium (MoTi) alloy. Providing a substrate defined by a display area and a pad area;
Simultaneously forming a thin film transistor having an active layer, a gate electrode, and a source electrode and a drain electrode on a display region of the substrate and a first conductive layer of a pad electrode on a pad region of the substrate;
Forming a first planarization layer to cover the thin film transistor;
Simultaneously forming a dummy layer of an anode electrically connected to the thin film transistor on the first planarization layer and a second conductive layer and a third conductive layer of the pad electrode covering the first conductive layer of the pad electrode, ; And
And forming a remaining layer of the anode on the dummy layer of the anode. 23. The method of claim 22,
Further comprising forming a first auxiliary wiring on the first planarization layer,
Wherein the first auxiliary wiring is simultaneously formed of the same material as the dummy layer and the anode. Providing a substrate defined by a display area and a pad area;
Simultaneously forming a thin film transistor having an active layer, a gate electrode, and a source electrode and a drain electrode on a display region of the substrate and a first conductive layer of a pad electrode on a pad region of the substrate;
Forming a first planarization layer to cover the thin film transistor;
Simultaneously forming a dummy electrode electrically connected to the thin film transistor and a first auxiliary wiring on an upper surface of the first planarizing layer;
Forming a second conductive layer and a third conductive layer of the pad electrode covering the first conductive layer of the pad electrode;
Forming a second planarization layer to cover the dummy electrode and the first auxiliary wiring; And
Forming an anode on the upper surface of the second planarization layer, the anode electrically connected to the dummy electrode, and a second auxiliary wiring electrically connected to the first auxiliary wiring. 25. The method of claim 24,
Wherein the forming of the second conductive layer and the third conductive layer of the pad electrode is performed simultaneously with the step of simultaneously forming the dummy electrode and the first auxiliary wiring. 25. The method of claim 24,
The second conductive layer of the pad electrode is formed of the same material as the dummy electrode and the first auxiliary wiring,
Wherein the third conductive layer of the pad electrode is formed of the same material as a part of the second auxiliary wiring.

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