KR20160047052A - High Luminance Large Area Organic Light Emitting Diode Display - Google Patents

Abstract

The present invention relates to a large area high-luminance organic light emitting diode display device. According to the present invention, the organic light emitting diode display device includes: a substrate; an anode electrode; a sub cathode electrode; a T-shaped black matrix; an organic light emitting layer; and a cathode electrode. The anode electrode is arranged on the substrate in a matrix type. The sub cathode electrode is placed around the anode electrode while having a predetermined distance away from the anode electrode. The T-shaped black matrix is placed on the sub cathode electrode. The organic light emitting layer is laminated on the upper surfaces of the anode electrode and the T-shaped black matrix. The cathode electrode touches the surface of the sub cathode electrode exposed to the bottom of the T-shaped black matrix and the upper surface of the organic light emitting layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light emitting diode (OLED)

The present invention relates to a large-area high-luminance organic light emitting diode display device. Particularly, the present invention has an auxiliary cathode electrode for lowering the surface resistance of the cathode electrode, and achieves uniform display quality in a large area by bringing the cathode electrode into contact with the auxiliary cathode electrode by using a black matrix, And more particularly, to a top-emitting organic light emitting diode display device with reduced luminance.

2. Description of the Related Art Recently, various flat panel display devices capable of reducing weight and volume, which are disadvantages of cathode ray tubes (CRTs), have been developed. Such flat panel display devices include a liquid crystal display (LCD), a field emission display (FED), a plasma display panel (PDP), and an electro-luminescence device (EL) .

FIG. 1 is a plan view showing the structure of an organic light emitting diode display (OLED) using a thin film transistor which is an active device according to the related art. FIG. 2 is a cross-sectional view taken along the cutting line I-I 'in FIG. 1, illustrating a structure of a conventional organic light emitting diode display device.

1 and 2, a conventional organic light emitting diode display device includes a thin film transistor (TFT) substrate having a thin film transistor (ST) and a thin film transistor (DT) and an organic light emitting diode (OLED) And a cap (TS) for bonding the organic bonding layer (FS) therebetween. The thin film transistor substrate includes a switching thin film transistor ST, a driving thin film transistor DT connected to the switching thin film transistor ST and an organic light emitting diode OLE connected to the driving thin film transistor DT.

The switching thin film transistor ST is formed on a transparent substrate SUB such as a glass at a position where the scan line SL and the data line DL cross each other. The switching thin film transistor ST functions to select a pixel. The switching thin film transistor ST includes a gate electrode SG, a semiconductor layer SA, a source electrode SS and a drain electrode SD which branch from the scan line SL. The driving thin film transistor DT serves to drive the anode electrode ANO of the pixel selected by the switching thin film transistor ST. The driving thin film transistor DT includes a gate electrode DG connected to the drain electrode SD of the switching thin film transistor ST, a source electrode DS connected to the semiconductor layer DA, the driving current wiring VDD, Electrode DD. The drain electrode DD of the driving thin film transistor DT is connected to the anode electrode ANO of the organic light emitting diode OLE.

In FIG. 2, a thin film transistor having a top gate structure is shown as an example. In this case, the semiconductor layer DA of the switching thin film transistor ST and the semiconductor layer DA of the driving thin film transistor DT are formed on the substrate SUB first, and the gate insulating film GI, SG and DG are formed overlapping with the center portions of the semiconductor layers SA and DA. Source electrodes SS and DS and drain electrodes SD and DD are connected to both sides of the semiconductor layers SA and DA through a contact hole. The source electrodes SS and DS and the drain electrodes SD and DD are formed on the insulating film IN covering the gate electrodes SG and DG.

A gate pad GP formed at one end of each scan line SL and a data pad DP formed at one end of each data line DL are formed in the outer periphery of the display region where the pixel region is arranged, A driving current pad VDP formed at one end of the current wiring VDD is disposed. The protective film PAS is entirely coated on the substrate SUB on which the switching thin film transistor ST and the driving thin film transistor DT are formed. Contact holes are formed to expose the gate electrode GP, the data pad DP, the driving current pad VDP, and the drain electrode DD of the driving thin film transistor DT. Then, a flattening film PL is applied onto the display area of the substrate SUB. The planarization layer PL serves to uniformize the roughness of the substrate surface in order to apply the organic material constituting the organic light emitting diode (OLE) in a smooth planar state.

An anode electrode ANO is formed on the planarizing film PL in contact with the drain electrode DD of the driving TFT DT through a contact hole. The gate pad GP, the data pad DP, and the gate formed on the driving current pad VDP, which are exposed through the contact holes formed in the passivation film PAS, are formed on the outer peripheral portion of the display region where the planarization film PL is not formed. A pad terminal GPT, a data pad terminal DPT, and a driving current pad terminal VDPT, respectively. The bank BA is formed on the substrate SUB except for the pixel region in the display region.

The organic light emitting layer OL is applied on the exposed anode electrode ANO through the bank BA and the bank BA. A cathode electrode (CAT) is coated on the organic light emitting layer (OL). Thus, an organic light emitting diode (OLE) having a structure in which an anode electrode ANO, an organic light emitting layer OL, and a cathode electrode CAT are stacked is completed.

A cap (TS) having a constant spacing is attached to the thin film transistor substrate (SUB) having the above structure. In this case, it is preferable that the thin film transistor substrate SUB and the cap TS be completely sealed and bonded together with the organic bonding layer FS interposed therebetween while maintaining a constant gap therebetween. The organic bonding layer FS bonds the thin film transistor substrate SUB and the cap TS to each other and seals them to prevent moisture and gas from penetrating from the outside. The gate pad GP and the gate pad terminal GPT and the data pad DP and the data pad terminal DPT are exposed to the outside of the cap TS and connected to an external device through various connecting means.

The inner surface of the cap TS may further include a black matrix BM formed in the non-emission region and a color filter CF formed in the emission region. In particular, when the organic light emitting layer OL emits white light, the color of red (R) -green (G) -choler B can be realized using a color filter CF.

In the organic light emitting diode display device having such a structure, a cathode electrode (CAT) having a basic voltage is applied over the entire surface of the substrate of the display panel. When the cathode electrode (CAT) is formed of a metal material having a low specific resistance value, there is no serious problem. However, when the cathode electrode (CAT) is formed of a transparent conductive material in order to secure the transmittance, surface resistance may increase and image quality may be deteriorated.

For example, when the cathode electrode (CAT) contains indium-tin oxide or indium-zinc oxide which is a transparent conductive material or a substance having a higher resistivity than metal, the surface resistance becomes large. Then, there arises a problem that the cathode electrode (CAT) does not have a constant voltage value over the entire area of the display panel. Particularly, when the organic EL display device is developed as a large-area organic light emitting diode display device, the luminance of the display device may become uneven over the entire screen.

 Further, in the case of the top emission type, an auxiliary cathode electrode may be further provided to lower the sheet resistance of the cathode electrode CAT. It is preferable that the auxiliary cathode electrode is formed of a metal material having a low resistivity value. Metallic materials with low resistivity tend to have high reflectivity. Therefore, there is a problem that external light is reflected by the auxiliary cathode electrode and the display quality is lowered. In this case, a polarizing plate may be further attached to the outside of the cap TS to reduce reflection feeling. 3 is a cross-sectional view illustrating a top emission type organic light emitting diode display device according to a related art, further comprising a polarizing plate for preventing reflection of external light.

As shown in FIG. 3, a polarizing plate POL and a quadrupole wave plate (QWP) may be further provided to prevent external light from being reflected and deteriorate display quality recognized by the spectator. When external light is incident, the light is linearly polarized in one direction by the polarizing plate POL, and the linearly polarized external light can be left-handed circularly polarized light by the quarter wave plate (QWP). When the left circularly polarized light is reflected by the display elements below it, the right circularly polarized light changes its polarization state. As a result, the reflected light is linearly polarized again by the quarter wave plate (QWP), and its optical axis becomes orthogonal to the polarization state at the time of incidence. Therefore, the reflected light can not pass through the polarizing plate POL.

Although the external light can be prevented from being reflected by the polarizer POL, the amount of light emitted from the organic light emitting diode display itself by the polarizer POL is also reduced by at least 50%. In other words, although the reflection feeling can be prevented, an adverse effect that the luminance of the display device is largely reduced occurs. In order to solve the decrease in luminance, the power consumption must be further increased, so that it is impossible to realize a low power consumption.

SUMMARY OF THE INVENTION An object of the present invention is to provide a large area organic light emitting diode display device having high quality display quality by directly contacting a cathode electrode with an auxiliary cathode electrode to reduce surface resistance have. Another object of the present invention is to provide a large area organic light emitting diode display device in which a black matrix is disposed on an auxiliary cathode electrode to reduce reflection feeling of external light. It is a further object of the present invention to provide a method of forming a thin film transistor having a double layer black matrix formed on an auxiliary cathode electrode to partially apply and uncoat the organic light emitting layer and to bring the cathode electrode into direct contact with the auxiliary cathode electrode in the non- And to provide a large area organic light emitting diode display device. Another object of the present invention is to provide a large area organic light emitting diode display device having a high luminance by reducing the external light reflection feeling without a polarizer.

In order to achieve the above object, an organic light emitting diode display according to the present invention includes a substrate, an anode electrode, an auxiliary cathode electrode, a T-shaped black matrix, an organic light emitting layer, and a cathode electrode. The anode electrode is arranged on the substrate in a matrix manner. The auxiliary cathode electrode is spaced apart from the anode electrode by a certain distance and disposed at the periphery of the anode electrode. The T-shaped black matrix is disposed on the auxiliary cathode electrode. The organic light emitting layer is stacked on the upper surface of the anode electrode and the upper surface of the T-shaped black matrix. The cathode electrode is in contact with the upper surface of the organic light emitting layer and the surface of the auxiliary cathode electrode exposed under the T-shaped black matrix.

In one example, the T-shaped black matrix includes a lower black matrix and an upper black matrix. The lower black matrix has a first height and a first width. And the upper black matrix is stacked on the lower black matrix with a second height and a second width greater than the first width.

In one example, the first height has a value that is 30-50% of the sum of the first height and the second height.

For example, the first width is narrower than the second width by 1 to 1.5 占 퐉.

In one example, the organic light emitting layer is laminated except for the surface of the auxiliary cathode electrode disposed between the outer sides of the upper black matrix and the outer sides of the lower black matrix; The cathode electrode is stacked on the surface of the auxiliary cathode electrode disposed between the outer side of the upper black matrix and the outer side of the lower black matrix.

The organic light emitting diode display according to the present invention further comprises an auxiliary cathode electrode connected to the cathode electrode when forming a gate element or a source-drain element including a material having a low resistivity such as copper. Thereby, the surface resistance of the cathode electrode can be further lowered, and an organic light emitting display device having uniform brightness over the entire display panel with no difference in brightness distribution can be obtained. In addition, a protective electrode interposed between the auxiliary cathode electrode and the cathode electrode is further provided to prevent the auxiliary cathode electrode from being peeled off or a contact failure occurring. Thus, even when the organic light emitting display device is manufactured in a large area, the value of the base voltage can be uniformly ensured over the entire area without any deviation.

1 is a plan view showing a structure of an organic light emitting diode display device using a thin film transistor which is an active device according to the related art.
FIG. 2 is a cross-sectional view taken along a cutting line I-I 'in FIG. 1, showing a structure of a conventional organic light emitting diode display device. FIG.
BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light emitting diode (OLED) display device, and more particularly,
4 is a plan view showing a structure of an organic light emitting diode display device according to the present invention.
FIG. 5 is a cross-sectional view cut along the perforated line II-II 'in FIG. 4, showing a structure of an organic light emitting diode display device according to the present invention.
6 is a sectional view showing a detailed structure of a double tapered barrier rib in the organic light emitting diode display device according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Like reference numerals throughout the specification denote substantially identical components. In the following description, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. In addition, the component names used in the following description may be selected in consideration of easiness of specification, and may be different from the parts names of actual products.

Hereinafter, the present invention will be described in detail with reference to Figs. First, referring to FIG. 4 and FIG. 5, the overall structure of an organic light emitting diode display device according to the present invention will be described. 4 is a plan view showing the structure of an organic light emitting diode display device according to the present invention. FIG. 5 is a cross-sectional view cut along a cutting line II-II 'in FIG. 4, illustrating a structure of an organic light emitting diode display device according to the present invention.

4, an organic light emitting diode display device according to the present invention includes a plurality of scan lines SL arranged in a horizontal direction on a substrate SUB, a plurality of data lines DL arranged in a longitudinal direction, And a driving current wiring VDD arranged in parallel with the scanning line DL. A plurality of pixel regions having a rectangular shape are defined by a structure in which the scan lines SL, the data lines DL, and the drive current lines VDD cross each other.

In the pixel region, an organic light emitting diode (OLE) is disposed to define a light emitting region for emitting light. The light emitting region is determined by the anode electrode ANO of the organic light emitting diode (OLE). In one side of the pixel region, a thin film transistor region (TA) in which thin film transistors for driving the anode electrode (ANO) are arranged is defined. The portion excluding the light emitting region in the pixel region is defined as the non-light emitting region. For example, most of the anode electrode ANO can be defined as a light emitting region, and all the remaining regions can be defined as a non-light emitting region.

The organic light emitting diode display according to the present invention is mainly related to the upper emission type and further includes an auxiliary cathode electrode (AC) for lowering the surface resistance of the cathode electrode (CAT). For example, an auxiliary cathode electrode (AC) electrically disconnected by a certain distance from the anode electrode (ANO), disposed in the non-emission region, and electrically and physically connected to each other throughout the substrate (SUB).

In addition, the organic EL display according to the present invention is arranged such that the black matrix BM has the same shape as the auxiliary cathode electrode AC, but has a small width over the auxiliary cathode electrode AC and overlaps the center region thereof . Hereinafter, the structure of the organic light emitting diode display device according to the present invention will be described in more detail with reference to FIG. 5, which shows a sectional structure.

4 and 5, an organic light emitting diode display device according to the present invention includes a thin film transistor (ST) and a thin film transistor (TFT) substrate having an organic light emitting diode (OLED) SUB and a cap TS for bonding the organic bonding layer FS with the thin film transistor substrate SUB opposite to each other. The thin film transistor substrate SUB has a pixel region defined by a scan line SL, a data line DL, and a drive current line VDD.

In the pixel region defined in the thin film transistor substrate SUB, a switching thin film transistor, a driving thin film transistor connected to the switching thin film transistor, and an organic light emitting diode (OLE) connected to the driving thin film transistor are included. 4 and 5, the structure of the switching thin film transistor and the driving thin film transistor is not shown in detail. Since the main feature of the present invention is not in the structure of the thin film transistor, all known thin film transistor structures can be applied.

The switching thin film transistor and the driving thin film transistor are formed in the thin film transistor region TA defined in the pixel region. The switching thin film transistor functions to select pixels. The driving thin film transistor serves to drive the anode electrode ANO assigned to the pixel region selected by the switching thin film transistor. The driving thin film transistor is connected to the anode electrode ANO of the organic light emitting diode. In FIG. 5, for the sake of convenience, a simple structure is shown in which the driving thin film transistor DT is integrated with the data line DL.

The planarizing film PL is applied on the thin film transistor substrate SUB on which the data line DL, the driving thin film transistor DT, the driving current wiring VDD, the scanning wiring, and the like are formed. An anode electrode ANO and an auxiliary cathode electrode AC are formed on the planarizing film PL. The anode electrode ANO is connected to the driving thin film transistor DT through a contact hole passing through the planarizing film PL. The auxiliary cathode electrode AC is formed on the same layer with the same material as the anode electrode ANO, but is electrically and materially separated. For example, the anode electrode ANO has a shape corresponding to the light emitting region in the pixel region. On the other hand, the auxiliary cathode electrode AC has a shape corresponding to the non-emission region in the display region.

On the anode electrode ANO and the auxiliary cathode electrode AC, a bank BA having an opening region for exposing the light emitting region is formed. At the same time, it is preferable that the bank BA has an opening region that exposes most of the auxiliary cathode electrode AC. For example, the bank BA may have a shape covering the boundary region between the anode electrode ANO and the auxiliary cathode electrode AC.

On the surface of the auxiliary cathode electrode (AC) exposed by the bank (BA), a black matrix (BM) which is an organic material having a black color is formed. In particular, the black matrix (BM) preferably has a cross-sectional shape of "T" For example, the black matrix BM may comprise an upper layer having a first width and a lower layer having a second width narrower than the first width.

The organic light emitting layer OL is coated on the entire surface of the substrate SUB on which the black matrix BM is formed. As a result, the organic light emitting layer OL is stacked along the shape of the bank BA, and is also stacked on the exposed surface of the anode electrode ANO. On the other hand, on the upper surface of the auxiliary cathode electrode AC on which the T-shaped black matrix BM is formed, the organic light emitting layer OL is laminated only on a part of the side surface of the auxiliary cathode electrode AC by the black matrix BM. That is, a portion of the surface of the auxiliary cathode electrode AC corresponding to the first width, which is the width of the upper portion of the black matrix BM, remains exposed.

A cathode electrode (CAT) is deposited on the entire surface of the substrate (SUB) coated with the organic light emitting layer (OL). In particular, in the case of the top emission type organic light emitting diode display device according to the present invention, the cathode electrode (CAT) may be formed of indium-tin-oxide (ITO) or indium-zinc- IZO). ≪ / RTI > The cathode electrode CAT is deposited on the organic light emitting layer OL along the shape of the bank BA. As a result, the organic light emitting diode (OLE) in which the anode electrode ANO, the organic light emitting layer OL, and the cathode electrode CAT are stacked is completed in the light emitting region.

On the other hand, in the region where the black matrix BM as the non-emission region is formed, the cathode electrode CAT covers the upper surface and the side surface of the organic light emitting layer OL and is also applied on the surface of the auxiliary cathode electrode AC. That is, to the side wall of the lower layer of the black matrix BM, and the cathode electrode CAT is in physical and electrical contact with the auxiliary cathode electrode AC.

A cap (TS) having a constant spacing is attached to the thin film transistor substrate (SUB) having the above structure. In this case, it is preferable that the thin film transistor substrate SUB and the cap TS be completely sealed and bonded together with the organic bonding layer FS interposed therebetween while maintaining a constant gap therebetween. The organic bonding layer FS bonds the thin film transistor substrate and the cap TS to each other and seals them to prevent moisture and gas from penetrating from the outside.

In addition, the inner surface of the cap TS may further include a color filter CF formed to correspond to the light emitting region. In particular, when the organic light emitting layer OL emits white light, the color of red (R) -green (G) -choler B can be realized using a color filter CF. In the organic light emitting diode display according to the present invention, the black matrix BM is not formed in the cap TS on which the color filter CF is formed. Instead, it is formed on the auxiliary cathode electrode AC of the thin film transistor substrate SUB.

In the organic light emitting diode display device having such a structure, the cathode electrode (CAT) having a basic voltage is applied over the entire surface of the substrate (SUB) of the display panel. In order to secure the transmittance in the upper emission type, the transparent conductive material must be formed of a transparent conductive material. Since the surface conductive resistance of the transparent conductive material is considerably larger than that of the metal conductive material, image quality may be deteriorated.

However, in the organic light emitting diode display device according to the present invention, the cathode electrode (CAT) is in electrical contact with the auxiliary cathode electrode (AC) formed of the same material as the anode electrode (ANO). In the present invention, since the anode electrode ANO is formed of a metal material having a low resistance, the auxiliary cathode electrode AC has a lower specific resistance value than the cathode electrode CAT. Therefore, when the present invention is applied to the upper emission type, the surface resistance of the cathode electrode (CAT) can be lowered by the auxiliary cathode electrode (AC), which is advantageous for realizing a large area organic light emitting diode display device.

A black matrix (BM) is stacked on the auxiliary cathode electrode (AC). Therefore, external light can be prevented from being reflected by the auxiliary cathode electrode AC and perceived by the spectator. Therefore, the reflection feeling can be reduced without attaching the polarizer to the top of the cap TS attached on the thin film transistor substrate SUB. That is, the organic light emitting diode display device according to the present invention can improve the disadvantage that the amount of light is reduced by the polarizing plate for improving the reflection feeling. That is, it is possible to provide an organic light emitting diode display device having a higher luminance with the same power consumption or a lower power consumption in providing the same luminance.

In addition, since the black matrix BM is formed directly on the thin film transistor substrate SUB, no misalignment occurs when the black matrix BM is formed on the cap TS. That is, when the black matrix BM is formed on the cap TS such as the color filter CF, when the thin film transistor substrate SUB and the cap TS are attached together, the black matrix BM is formed on the thin film transistor substrate SUB), so it is necessary to take the tack error into consideration. However, in the present invention, since the black matrix BM is formed on the thin film transistor substrate SUB, the boundary surface of the color filter CF may be disposed only within the width range of the black matrix BM, Has a value larger than the alignment error, it is not necessary to consider the alignment error.

Hereinafter, with reference to FIG. 6, structural characteristics of a black matrix (BM), which is a main feature of the present invention, will be described in more detail. 6 is a cross-sectional view showing a detailed structure of a double tapered barrier rib in the organic light emitting diode display device according to the present invention.

A planarizing film PL is formed on the surface of the substrate SUB on which the thin film transistors are formed. An anode electrode ANO and an auxiliary cathode electrode AC are formed on the planarizing film PL. Particularly, in the case of the top emission type, the anode electrode ANO can use a metal material such as silver, copper, or aluminum, which has high reflectivity and low resistivity. Therefore, the auxiliary cathode electrode AC is also formed of the same material as the anode electrode ANO, thereby functioning to lower the surface resistance of the cathode electrode CAT.

A part of the lateral sides of the auxiliary cathode electrode (AC) is covered by the bank (BA), and most of the area is exposed. A black matrix (BM) is formed on the exposed auxiliary cathode electrode (AC). The black matrix (BM) is preferably an organic material having a black color. The black matrix (BM) preferably has a T-shaped bilayer structure. For example, the upper layer black matrix (UBM) having a second width larger than the first width may be stacked on the lower layer black matrix (LBM) having the first width. The lower layer black matrix LBM has a first height H1 and the upper layer black matrix UBM has a second height H2.

The lower layer black matrix LBM may have an undercut shape inwardly overgrown by a certain distance d from the side of the upper layer black matrix UBM. In this way, the black matrix BM has a T-shaped structure having a double width and a double height. The organic light emitting layer OL is not applied to the width of the upper layer black matrix UBM, Layer black matrix LBM to the side wall of the lower layer black matrix LBM.

The upper black matrix UBM is applied only to the upper surface of the upper black matrix UBM by adjusting the deposition conditions when the organic light emitting layer OL is coated on the substrate SUB on which the T-shaped black matrix BM is formed, Is not applied to the lower part of the frame. That is, the organic light emitting layer OL is not coated on the surface of the auxiliary cathode electrode AC between the outer wall of the lower black matrix LBM and the outer wall of the upper black matrix UBM.

In this state, when the cathode electrode (CAT) is applied to the entire surface of the substrate (SUB), the deposition conditions are adjusted so that not only the upper surface of the upper black matrix (UBM) but also the lower surface of the upper black matrix But also on the surface of the auxiliary cathode electrode (AC). That is, the organic light emitting layer OL is not coated on a part of the surface of the auxiliary cathode electrode AC so that the cathode electrode CAT directly contacts the auxiliary cathode electrode AC.

As described above, there are various factors that cause different deposition profiles of the organic light emitting layer OL and the cathode electrode CAT. First, the substances to be deposited are different. Secondly, the deposition profiles can be derived differently by artificially varying the deposition conditions. Since the deposition conditions differ depending on the deposition equipment and environment used, the best results can be obtained by repeating the process several times.

As a more important factor, the width and height values of the lower black matrix (LBM) and the upper black matrix (UBM) may be appropriately selected to result in different deposition profiles appearing more effectively. First, among the conditions obtained in the present invention, there is a width difference between the lower black matrix (LBM) and the upper black matrix (UBM). For example, the lower black matrix LBM is overlaid by one side of the upper black matrix UBM by? D. Here,? D is preferably about 1 to 1.5 占 퐉. That is, the first width of the lower black matrix LBM is preferably 2 to 3 탆 smaller than the second width of the upper black matrix UBM.

Next, there is a height difference between the lower black matrix LBM and the upper black matrix UBM. For example, it is preferable that the height of the entire black matrix BM is 1 to 4 mu m and the height H2 of the upper layer black matrix UBM is 0.3 to 2 mu m. More preferably, the second height H2 of the upper layer black matrix UBM is formed to be about 30 to 50% of the entire black matrix height. Therefore, the ratio of the first height H1 of the lower layer black matrix LBM to the second height H2 of the upper layer black matrix UBM is preferably selected from H1: H2 = 7: 3 to 5: 5 Do.

The present invention provides a structure in which the auxiliary cathode electrode (AC) and the cathode electrode (CAT) are in direct contact with each other. Accordingly, when the white organic light emitting layer is used, the auxiliary cathode electrode AC and the cathode electrode CAT can be directly deposited without using a separate screen mask. In addition, even when the red, green, and blue organic light emitting layers are applied pixel by pixel, the hole injecting layer, the hole transporting layer, the electron transporting layer, and the electron injecting layer, except for the light emitting layer, can be deposited without a screen mask, There are advantages.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the present invention should not be limited to the details described in the detailed description, but should be defined by the claims.

ST: switching TFT DT: driving TFT
SL: scan wiring DL: data wiring
VDD: driving current wiring SUB: (thin film transistor) substrate
GI: Gate insulating film IN: Insulating film
PAS: protective film PL: planarization film
OL: organic light emitting layer OLE: organic light emitting diode
FS: organic laminating film TS: cap
CHC: cathode contact hole AC: auxiliary cathode electrode
CF: color filter BM: black matrix
LBM: Lower Black Matrix UBM: Upper Black Matrix

Claims (5)

An anode electrode arranged on a substrate in a matrix manner;
An auxiliary cathode electrode spaced a predetermined distance from the anode electrode and disposed around the anode electrode;
A T-shaped black matrix disposed on the auxiliary cathode electrode;
An organic light emitting layer laminated on the upper surface of the anode electrode and the upper surface of the T-shaped black matrix; And
And a cathode electrode which is in contact with the upper surface of the organic light emitting layer and the surface of the auxiliary cathode electrode exposed under the T-shaped black matrix.
The method according to claim 1,
Wherein the T-shaped black matrix comprises:
A lower black matrix having a first height and a first width; And
And an upper black matrix having a second height and a second width greater than the first width and stacked on the lower black matrix.
3. The method of claim 2,
The first height,
Wherein the organic light emitting diode display has a value of 30 to 50% of a sum of the first height and the second height.
3. The method of claim 2,
The first width may be,
And has a narrower value of 1 to 1.5 占 퐉 on the side of the second width.
3. The method of claim 2,
The organic light-
Wherein the upper surface of the lower black matrix and the upper surface of the lower black matrix are stacked except for the surface of the auxiliary cathode electrode disposed between the outer side of the upper black matrix and the outer side of the lower black matrix;
The cathode electrode
Wherein the organic light emitting diode display device is stacked on a surface of the auxiliary cathode electrode disposed between an outer side of the upper black matrix and an outer side of the lower black matrix.

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