KR102566090B1 - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

An organic light emitting display device according to an exemplary embodiment of the present invention is provided. The organic light emitting display device includes a substrate defined by a display area and a pad area, a thin film transistor positioned on the substrate in the display area, an active layer, a gate electrode, and a source electrode and a drain electrode, electrically connected to the thin film transistor, and at least It is located on the substrate in the anode and pad regions composed of two conductive layers, and includes a pad electrode composed of a plurality of conductive layers, wherein the first conductive layer of the pad electrode is composed of the same material as the source electrode and the drain electrode, The second conductive layer of the pad electrode and the third conductive layer of the pad electrode are formed to cover the first conductive layer.

Description

Organic light emitting display device and method of manufacturing the organic light emitting display device

The present invention relates to an organic light emitting display device and a method of manufacturing the organic light emitting display device, and more particularly, to an organic light emitting display device including a pad electrode having improved reliability and a method of manufacturing the organic light emitting display device.

An organic light emitting display (OLED) is a self-emissive display device, and unlike a liquid crystal display (LCD), it does not require a separate light source and can be manufactured to be lightweight and thin. In addition, the organic light emitting display device is advantageous in terms of power consumption due to low voltage driving, and is being studied as a next-generation display because it is excellent in color implementation, response speed, viewing angle, and contrast ratio (CR).

According to the emission direction of the light emitted from the organic light emitting element, the organic light emitting display device can be classified into a top emission type organic light emitting display device, a bottom emission type organic light emitting display device, and a double-side emission type organic light emitting display device. It is classified as a display device.

In the top emission organic light emitting display device, the anode is preferably formed of a conductive material having excellent reflective properties and an appropriate work function. However, since there is currently no applicable single material that simultaneously satisfies these characteristics, the anode of the top emission type organic light emitting display device is composed of a multilayer structure of conductive layers, for example, indium tin oxide (ITO) layer, a silver alloy layer and an ITO layer are stacked. Accordingly, light emitted from the organic light emitting layer of the organic light emitting device is reflected by the silver alloy layer, thereby realizing a top emission type organic light emitting display device.

Meanwhile, a pad electrode of a general organic light emitting display device is an electrode that is bonded to an external module and receives an electrical signal from the external module or outputs an electrical signal to the external module. An uppermost layer of a pad electrode of a general top emission organic light emitting display device is formed of the same material as an anode. Specifically, the pad electrode has a structure in which an electrode formed of the same material as the anode is formed on an electrode formed of the same material as the source and drain electrodes of the thin film transistor.

Here, a layer formed of the same material as the anode, which is the uppermost layer of the pad electrode, is formed at the same time as the anode is formed. Specifically, the uppermost layer of the anode and the pad electrode is formed by performing a batch etching process in a state in which the ITO material, the silver alloy material, and the ITO material are stacked. Therefore, the uppermost layer of the pad electrode also has a structure in which an ITO layer, a silver alloy layer, and an ITO layer are stacked, and in the case of the silver alloy layer, the side surface is exposed to the outside, and damage occurs to the silver alloy layer with the side surface exposed. Accordingly, a driving defect of the organic light emitting display device may occur.

Specifically, in order to test the reliability of the organic light emitting display device, the panel on which the organic light emitting elements are formed is kept in a high-temperature chamber for a certain period of time. In this case, damage may occur to the silver alloy layer of the pad electrode due to the high temperature in the chamber, and the organic light emitting diode display may not be normally driven because the pad electrode does not come into contact with an external module.

Also, when the silver alloy layer of the pad electrode is exposed to the outside, the silver alloy layer may react with moisture and air. In this case, a galvanic effect occurs between the silver alloy layer and the ITO layer. The galvanic effect is a phenomenon that occurs when two materials having a difference in electromotive force are simultaneously exposed to a corrosive solution. Force: EMF) is corroded and the pad electrode has insulating properties. Therefore, a driving defect phenomenon in which the organic light emitting display device is not normally driven may occur because the pad electrode does not come into contact with the external module.

In addition, in the module process, the pad electrode may be under a high-temperature and high-pressure condition. When moisture is applied to the side of the silver alloy layer exposed to the outside under such a high-temperature and high-pressure condition, a migration phenomenon occurs in the silver alloy layer. . Accordingly, a portion of the silver alloy layer may grow, and adjacent pad electrodes may be short-circuited, resulting in a driving defect phenomenon in which the organic light emitting display device is not normally driven.

Accordingly, a method in which the pad electrode is made of the same material as the source electrode and the drain electrode without using a layer formed of the same material as the anode, which is the uppermost layer of the pad electrode, has also been considered. However, there is a problem that metal materials generally used as a source electrode and a drain electrode may be lost by an etchant used in an etching process for forming an anode.

Accordingly, the inventors of the present invention invented an organic light emitting display device having a new pad electrode structure and a method of manufacturing the same for preventing damage that may occur to the pad electrode in a top emission type organic light emitting display device.

Accordingly, an object to be solved by the present invention is to provide an organic light emitting display device and a method of manufacturing the organic light emitting display device capable of preventing damage or corrosion of a pad electrode.

In addition, another problem to be solved by the present invention is to provide an organic light emitting display device having improved reliability and a manufacturing method of the organic light emitting display device.

In addition, another problem to be solved by the present invention is to provide an organic light emitting display device capable of minimizing a voltage drop phenomenon that may occur in a top emission type organic light emitting display device.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

An organic light emitting display device according to an exemplary embodiment of the present invention is provided. The organic light emitting display device includes a substrate defined by a display area and a pad area, a thin film transistor positioned on the substrate in the display area, an active layer, a gate electrode, and a source electrode and a drain electrode, electrically connected to the thin film transistor, and at least It is located on the substrate in the anode and pad regions composed of two conductive layers, and includes a pad electrode composed of a plurality of conductive layers, wherein the first conductive layer of the pad electrode is composed of the same material as the source electrode and the drain electrode, The second conductive layer of the pad electrode and the third conductive layer of the pad electrode are formed to cover the first conductive layer.

According to another feature of the present invention, the third conductive layer of the pad electrode is formed to cover the second conductive layer of the pad electrode.

According to another feature of the present invention, the anode is characterized in that it comprises a structure in which a lower ITO (Indium Tin Oxide) layer, a silver alloy (Ag alloy) layer and an upper ITO layer are laminated.

According to another feature of the present invention, the anode is characterized in that it further comprises a dummy (dummy) layer electrically connected to the lower ITO layer in contact with the rear surface of the lower ITO layer.

According to another feature of the present invention, the dummy layer is composed of a plurality of layers, a lower layer of the plurality of layers has a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer, and among the plurality of layers The upper layer is formed of a molybdenum-titanium (MoTi) alloy and is formed to cover the lower layer.

According to another feature of the present invention, the dummy layer is formed of the same material as the second conductive layer of the pad electrode and the third conductive layer of the pad electrode.

According to another feature of the present invention, the source electrode and the drain electrode are characterized in that a structure in which a copper (Cu) layer is laminated on a molybdenum-titanium (MoTi) alloy layer.

According to another feature of the present invention, the organic light emitting diode display may further include a first planarization layer formed to cover the thin film transistor.

According to another feature of the present invention, the organic light emitting diode display may further include a first auxiliary wire formed on the top surface of the first planarization layer and positioned on the same plane as the anode.

According to another feature of the present invention, the second conductive layer of the pad electrode and the third conductive layer of the pad electrode are formed of the same material as the first auxiliary wire.

An organic light emitting display device according to another exemplary embodiment of the present invention is provided. The organic light emitting display device includes a substrate defined by a display area and a pad area, a thin film transistor positioned on the substrate in the display area, and having an active layer, a gate electrode, and a source electrode and a drain electrode, positioned on the substrate in the display area, and a thin film. A first planarization layer and a second planarization layer formed to cover the transistor, an anode electrically connected to the thin film transistor and formed on the upper surface of the second planarization layer, formed on the upper surface of the first planarization layer and electrically connected to the thin film transistor and the anode It includes a dummy electrode, a first auxiliary wire formed of the same material on the same plane as the dummy electrode, and a pad electrode disposed on a pad region substrate and composed of a plurality of conductive layers, wherein the first conductive layer of the pad electrode is a source electrode. and made of the same material as the drain electrode, and the second conductive layer of the pad electrode and the third conductive layer of the pad electrode are formed to cover the first conductive layer.

According to another feature of the present invention, the third conductive layer of the pad electrode is formed to cover the second conductive layer of the pad electrode.

According to another feature of the present invention, the source electrode and the drain electrode are characterized in that a structure in which a copper (Cu) layer is laminated on a molybdenum-titanium (MoTi) alloy layer.

According to another feature of the present invention, the dummy electrode is composed of a plurality of electrodes, and an upper electrode among the plurality of electrodes is formed to cover the lower electrode.

According to another feature of the present invention, the second conductive layer of the pad electrode is formed of the same material as the lower electrode of the dummy electrode, and the third conductive layer of the pad electrode is formed of the same material as the upper electrode of the dummy electrode. do.

According to another feature of the present invention, the dummy electrode is composed of a single electrode, and the dummy electrode is formed of the same material as the second conductive layer of the pad electrode.

According to another feature of the present invention, the organic light emitting display device of claim 1 further comprises a second auxiliary wire formed on a top surface of the second planarization layer and electrically connected to the first auxiliary wire.

According to another feature of the present invention, the second auxiliary wire is formed of the same material on the same plane as the anode.

According to another feature of the present invention, the anode is characterized in that it comprises a structure in which a lower ITO (Indium Tin Oxide) layer, a silver alloy (Ag alloy) layer and an upper ITO layer are laminated.

According to another feature of the present invention, the anode is characterized in that it further comprises a dummy (dummy) layer in contact with the rear surface of the lower ITO layer and electrically connected to the dummy electrode.

According to another feature of the present invention, the dummy layer is characterized in that it is formed of a molybdenum-titanium (MoTi) alloy.

A method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention is provided. A method of manufacturing an organic light emitting display includes providing a substrate defined by a display area and a pad area, a thin film transistor having an active layer, a gate electrode, and a source electrode and a drain electrode on the display area of the substrate and a pad area of the substrate. Simultaneously forming a first conductive layer of the pad electrode, forming a first planarization layer to cover the thin film transistor, a dummy layer of an anode electrically connected to the thin film transistor and a pad electrode on the upper surface of the first planarization layer It is characterized in that it comprises the step of simultaneously forming the second conductive layer and the third conductive layer of the pad electrode covering the first conductive layer of and forming the remaining layer of the anode on the dummy layer of the anode.

According to another feature of the present invention, the manufacturing method of the organic light emitting diode display further includes forming a first auxiliary wire on the first planarization layer, wherein the first auxiliary wire is formed of the same material as the dummy layer and the anode at the same time. to be characterized

A method of manufacturing an organic light emitting diode display according to another embodiment of the present invention is provided. A method of manufacturing an organic light emitting display includes providing a substrate defined by a display area and a pad area, a thin film transistor having an active layer, a gate electrode, and a source electrode and a drain electrode on the display area of the substrate and a pad area of the substrate. Simultaneously forming a first conductive layer of the pad electrode, forming a first planarization layer to cover the thin film transistor, a dummy electrode electrically connected to the thin film transistor on the upper surface of the first planarization layer, and a first auxiliary wire simultaneously forming a second conductive layer and a third conductive layer of the pad electrode covering the first conductive layer of the pad electrode, forming a second planarization layer to cover the dummy electrode and the first auxiliary wire. and forming an anode electrically connected to the dummy electrode and a second auxiliary wire electrically connected to the first auxiliary wire on the upper surface of the second planarization layer.

According to another feature of the present invention, the step of forming the second conductive layer and the third conductive layer of the pad electrode is performed simultaneously with the step of simultaneously forming the dummy electrode and the first auxiliary wire.

According to another feature of the present invention, the second conductive layer of the pad electrode is formed of the same material as the dummy electrode and the first auxiliary wire, and the third conductive layer of the pad electrode is formed of the same material as a part of the second auxiliary wire. characterized by

Other embodiment specifics are included in the detailed description and drawings.

According to the present invention, damage or corrosion of the pad electrode due to exposure of the silver alloy layer of the pad electrode to the outside can be minimized.

In addition, the present invention can improve the reliability of the pad electrode and further improve the reliability of the organic light emitting display device.

In addition, the present invention can minimize the occurrence of non-uniform luminance in a top emission organic light emitting display device, in particular, a large-area top emission organic light emitting display device.

Effects according to the present invention are not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a schematic plan view of an organic light emitting display device according to an exemplary embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of an organic light emitting diode display according to II-II' and II''-II''' of FIG. 1 .
3 is a schematic cross-sectional view of an organic light emitting display device according to another exemplary embodiment of the present invention.
4 is a schematic cross-sectional view of an organic light emitting display device according to another exemplary embodiment of the present invention.
5 is a flowchart illustrating a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention.
6A to 6D are schematic cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment of the present invention.
7 is a flowchart illustrating a method of manufacturing an organic light emitting diode display according to another exemplary embodiment of the present invention.
8A to 8C are schematic cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to another exemplary embodiment of the present invention.
9A to 9C are schematic cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to another exemplary embodiment of the present invention.

Advantages and features of the present invention, and methods of achieving them, will become clear with reference to the detailed description of the following embodiments taken in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various forms different from each other, only these embodiments make the disclosure of the present invention complete, and common knowledge in the art to which the present invention pertains. It is provided to completely inform the person who has the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are illustrative, so the present invention is not limited to the details shown. Like reference numbers designate like elements throughout the specification. In addition, in describing the present invention, if it is determined that a detailed description of related known technologies may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. When 'includes', 'has', 'consists of', etc. mentioned in this specification is used, other parts may be added unless 'only' is used. In the case where a component is expressed in the singular, the case including the plural is included unless otherwise explicitly stated.

In interpreting the components, even if there is no separate explicit description, it is interpreted as including the error range.

In the case of a description of a positional relationship, for example, 'on top of', 'on top of', 'at the bottom of', 'next to', etc. Or, unless 'directly' is used, one or more other parts may be located between the two parts.

When an element or layer is referred to as “on” another element or layer, it includes all cases where another element or layer is directly on top of another element or another layer or other element intervenes therebetween.

Although first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, the first component mentioned below may also be the second component within the technical spirit of the present invention.

Like reference numbers designate like elements throughout the specification.

The size and thickness of each component shown in the drawings are shown for convenience of description, and the present invention is not necessarily limited to the size and thickness of the illustrated components.

Each feature of the various embodiments of the present invention can be partially or entirely combined or combined with each other, technically various interlocking and driving are possible, and each embodiment can be implemented independently of each other or together in a related relationship. may be

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic plan view of an organic light emitting display device according to an exemplary embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of an organic light emitting diode display according to II-II' and II''-II''' of FIG. 1 . 1 and 2 , the organic light emitting diode display 100 includes a substrate 110, a thin film transistor 120, an organic light emitting element 130, a pad electrode 150, and a first auxiliary wire 140. do. In FIG. 1 , only the pad area PA and the display area DA of the substrate 110 are schematically illustrated for convenience of description. In this specification, the organic light emitting display device 100 will be described as a top emission type organic light emitting display device.

The substrate 110 is a substrate 110 for supporting and protecting various components of the organic light emitting display device 100 . The substrate 110 may be made of an insulating material, and may be made of, for example, glass or plastic, but is not limited thereto and may be made of various materials.

The substrate 110 is defined by a display area DA and a pad area PA. That is, the substrate 110 has a display area DA and a pad area PA. The display area DA is an area where an image is displayed in the organic light emitting display device 100, and the organic light emitting device 130 and various driving devices for driving the organic light emitting device 130 are disposed in the display area DA. . In FIG. 2 , only the driving thin film transistor 120 among various driving elements is illustrated for convenience of description. The pad area PA is an area where the pad electrode 150 is formed, and is an area where the pad electrode 150 and an external module such as a flexible printed circuit board (FPCB) or a chip on film (COF) come into contact. . As shown in FIG. 1 , the pad area PA may be defined on one side of the display area DA or on both sides of the display area DA.

A thin film transistor 120 is formed on the substrate 110 . A thin film transistor is formed in the display area DA of the substrate 110 . Specifically, a buffer layer 111 is formed on the substrate 110 , and an active layer 122 in which a channel of the thin film transistor 120 is formed is formed on the buffer layer 111 . The active layer 122 may be formed on the buffer layer 111 as shown in FIG. 2 or may be directly formed on the substrate 110 when the buffer layer 111 is not used. A gate insulating layer 112 is formed on the active layer 122 to insulate the active layer 122 and the gate electrode 121 from each other. A gate electrode 121 is formed on the gate insulating layer 112 . An interlayer insulating layer 113 is formed on the gate electrode 121 . The interlayer insulating layer 113 is formed on the entire surface of the substrate 110 and has a contact hole opening a partial region of the active layer 122 . A source electrode 123 and a drain electrode 124 are formed on the interlayer insulating layer 113, and each of the source electrode 123 and the drain electrode 124 is electrically connected to the active layer 122 through a contact hole. . The source electrode 123 and the drain electrode 124 may be formed of various conductive materials, and may be formed, for example, in a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer. A passivation layer 114 for protecting the thin film transistor 120 is formed on the source electrode 123 and the drain electrode 124 . In FIG. 2, the thin film transistor 120 is illustrated as having a coplanar structure for convenience of description, but is not limited thereto and the thin film transistor 120 may be formed in an inverted staggered structure. .

A first planarization layer 115 is formed on the thin film transistor 120 . The first planarization layer 115 is an insulating layer for planarizing the upper portion of the thin film transistor 120 . The first planarization layer 115 is formed only in the display area DA and is not formed in the pad area PA.

An organic light emitting device 130 is formed on the first planarization layer 115 . The organic light emitting element 130 includes an anode 137 , an organic light emitting layer 138 and a cathode 139 .

The anode 137 is composed of at least two conductive layers. Referring to FIG. 2 , the anode 137 includes a structure in which a lower ITO layer 131 , a silver alloy layer 132 , and an upper ITO layer 133 are stacked. The upper ITO layer 133 serves to transfer holes to the organic light emitting layer 138 formed on the anode 137, and the silver alloy layer 132 transmits light emitted from the organic light emitting layer 138 to the upper part. It functions as a reflector that reflects Various silver alloy conductive materials may be used as the silver alloy layer 132 , but other conductive materials having excellent reflectivity may also be formed between the upper ITO layer 133 and the lower ITO layer 131 without being limited thereto.

The anode 137 includes a dummy layer electrically connected to the lower ITO layer 131 in contact with the rear surface of the lower ITO layer 131 . The dummy layer 134 is electrically connected to the thin film transistor 120 through the contact hole of the first planarization layer 115 . That is, the dummy layer 134 electrically connects the thin film transistor 120 and the lower ITO layer 131 .

The dummy layer 134 is composed of a plurality of layers. Referring to FIG. 2 , the dummy layer 134 includes a lower layer 135 and an upper layer 136 . The lower layer 135 may have a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer, and the lower layer 135 is made of the same material as the source electrode 123 and the drain electrode 124. may be formed. The upper layer 136 is formed on the lower layer 135 and may be formed to cover the lower layer 135 as shown in FIG. 2 . However, it is not limited thereto, and the upper layer 136 may be formed only on the upper surface of the lower layer 135 . The upper layer 136 may be formed of a molybdenum-titanium (MoTi) alloy.

A first auxiliary wire 140 is formed on the first planarization layer 115 . Specifically, the first auxiliary wire 140 is positioned on the same plane as the anode 137 on the first planarization layer 115 . Referring to FIG. 2 , the first auxiliary wire 140 includes a first layer 141, a second layer 142 on the first layer 141, a third layer 143 on the second layer 142, and a second layer 143 on the second layer 142. It is composed of a fourth layer 144 on the third layer and a fifth layer 145 on the fourth layer 144 . The first layer 141 of the first auxiliary wire 140 is formed of the same material as the lower layer 135 of the dummy layer 134 of the anode 137, and the second layer 142 of the first auxiliary wire 140 ) is formed of the same material as the upper layer 136 of the dummy layer 134 of the anode 137, and the third layer 143 of the first auxiliary wire 140 is the lower ITO layer 131 of the anode 137 The fourth layer 144 of the first auxiliary wire 140 is formed of the same material as the silver alloy layer 132 of the anode 137, and the fifth layer 144 of the first auxiliary wire 140 Layer 145 may be formed of the same material as the upper ITO layer 133 of anode 137 .

In the case of a top emission type organic light emitting display device, a transparent electrode or a semi-transmissive electrode is used as a cathode to emit light emitted from an organic light emitting layer upward. In order to obtain sufficient light transmittance through the cathode, the cathode needs to be made very thin. Therefore, the cathode is made of ITO, an alloy of silver (Ag) and magnesium (Mg), or the like having a sufficiently thin thickness so that the cathode is transparent. However, decreasing the thickness of the cathode increases the electrical resistance of the cathode electrode. For this reason, the decrease in the thickness of the cathode causes a voltage drop (ie, IR drop) in some parts of the organic light emitting display device, in particular, a central part, and causes non-uniform luminance across the screen. In particular, the voltage drop phenomenon intensifies as the size of the display device increases. Accordingly, in the organic light emitting display device 100 according to an exemplary embodiment of the present invention, the first auxiliary wire 140 electrically connected to the cathode 139 is employed, and in the top emission organic light emitting display device 100 voltage drop can be minimized.

A bank layer 116 is formed on the first planarization layer 115 . The bank layer 116 may be formed to cover edges of the anode 137 and the first auxiliary wire 140 . A partial area of the anode 137 opened by the bank layer 116 may be defined as a light emitting area.

An organic light emitting layer 138 is formed on the anode 137 . The organic emission layer 138 may be formed on a portion of the anode 137 opened by the bank layer 116 . In this case, the organic light emitting layer 138 may be one of a red organic light emitting layer, a green organic light emitting layer, and a blue organic light emitting layer. Although not shown in FIG. 2 , the organic emission layer 138 may be a white organic emission layer. In this case, the white organic emission layer may be formed on the entire surface of the substrate 110 in the display area DA.

A cathode 139 is formed on the organic light emitting layer 138 . The cathode 139 is formed of a material having a high work function and is formed on the entire surface of the substrate 110 in the display area DA. The cathode 139 is electrically connected to the first auxiliary wire 140 . 2 shows that a partial region of the first auxiliary wire 140 is opened by the bank layer 116 and the cathode 139 and the first auxiliary wire 140 are electrically connected through the corresponding region, but this Without limitation, the cathode 139 and the first auxiliary wire 140 may be electrically connected in various ways.

Referring to FIG. 2 , a buffer layer 111 and an interlayer insulating layer 113 are formed on the substrate 110 in the pad area PA. When the buffer layer 111 is omitted, the interlayer insulating layer 113 may be directly formed on the substrate 110 .

The pad electrode 150 is formed on the substrate 110 in the pad area PA. Specifically, the pad electrode 150 is formed on the interlayer insulating layer 113 . The pad electrode 150 is composed of a plurality of conductive layers. Referring to FIG. 2 , the pad electrode 150 includes a first conductive layer 151 , a second conductive layer 152 on the first conductive layer 151 , and a third conductive layer 153 on the second conductive layer 152 . ) is formed.

The first conductive layer 151 of the pad electrode 150 is formed of the same material as the source electrode 123 and the drain electrode 124 of the thin film transistor 120 formed in the display area DA. That is, the first conductive layer 151 may have a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer. A passivation layer 114 is formed on the first conductive layer 151 . The passivation layer 114 includes an opening, and the opening of the passivation layer 114 is located on a portion of the first conductive layer 151 .

The second conductive layer 152 of the pad area PA is formed to cover the first conductive layer 151 of the pad area PA. The second conductive layer 152 is electrically connected to the first conductive layer 151 through the opening of the passivation layer 114 . The second conductive layer 152 may be formed of the same material as the lower layer 135 of the dummy layer 134 of the anode 137 and the first layer 141 of the first auxiliary wire 140 . That is, the second conductive layer 152 may have a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer.

The third conductive layer 153 of the pad area PA is formed to cover the first conductive layer 151 of the pad area PA. In addition, the third conductive layer 153 of the pad area PA is formed to cover the second conductive layer 152 of the pad area PA as well. Referring to FIG. 2 , the third conductive layer 153 is formed to surround the side surface of the second conductive layer 152 so that the second conductive layer 152 is not exposed to the outside. The third conductive layer 153 may be formed of the same material as the upper layer 136 of the dummy layer 134 of the anode 137 and the second layer 142 of the first auxiliary wire 140 . That is, the third conductive layer 153 may be formed of a molybdenum-titanium (MoTi) alloy layer.

In the organic light emitting display device 100 according to an exemplary embodiment of the present invention, the silver alloy layer and the ITO layer used in the anode 137 are not used as the pad electrode 150, and the pad electrode 150 is the source electrode 123 ), a conductive material used as the drain electrode 124 and the first auxiliary wire 140 is used as the pad electrode 150 . In addition, the third conductive layer 153, which is the uppermost layer of the pad electrode 150, is formed to cover the first conductive layer 151 and the second conductive layer 152 of the pad electrode 150, in particular, the third conductive layer 153. The layer 153 is formed to cover both the upper and side surfaces of the second conductive layer 152 . Here, the molybdenum-titanium (MoTi) alloy, which is a material used as the third conductive layer 153, covers the entire second conductive layer 152 in which copper (Cu) is formed as the uppermost layer, thereby forming the second conductive layer 152. The upper ITO layer 133 of the anode 137, the silver alloy layer 132, and the lower ITO layer 131 are not lost in the batch etching process, and the second conductive layer 152 reacts with moisture, resulting in a poor pad Formation of the electrode 150 may be prevented. In addition, the pad electrode 150 can be more easily formed by forming the second conductive layer 152 and the third conductive layer 153 of the pad electrode 150 with the same material as that of the first auxiliary wire 140. there is.

3 is a schematic cross-sectional view of an organic light emitting display device according to another exemplary embodiment of the present invention. Compared to the OLED display 100 shown in FIGS. 1 and 2 , the organic light emitting diode display 300 shown in FIG. 3 includes an anode 337, a dummy electrode 360, and a first auxiliary wire 340. They differ only in that the second auxiliary wire 370 and the second planarization layer 317 are added, and other components are substantially the same, so duplicate descriptions are omitted.

Referring to FIG. 3 , a dummy electrode 360 is formed on the first planarization layer 115 . The dummy electrode 360 is formed on the top surface of the first planarization layer 315 to electrically connect the thin film transistor 120 and the anode 337 . The dummy electrode 360 is composed of a plurality of electrodes. Referring to FIG. 3 , the dummy electrode 360 includes a lower electrode 361 and an upper electrode 362 . The lower electrode 361 may have a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer, and the lower electrode 361 is identical to the source electrode 123 and the drain electrode 124. It can also be made of matter. The upper electrode 362 may be formed on the lower electrode 361 and may cover the lower electrode 361 as shown in FIG. 3 . However, it is not limited thereto, and the upper electrode 362 may be formed only on the upper surface of the lower electrode 361 . The upper electrode 362 may be formed of a molybdenum-titanium (MoTi) alloy.

A first auxiliary wire 340 is formed on the first planarization layer 115 . The first auxiliary wire 340 is formed on the top surface of the first planarization layer 115 and is formed of the same material as the dummy electrode 360 on the same plane. The first auxiliary wire 340 is composed of a first layer 341 and a second layer 342 on the first layer 341 . The first layer 341 of the first auxiliary wire 340 is formed of the same material as the lower electrode 361 of the dummy electrode 360, and the second layer 342 of the first auxiliary wire 340 is the dummy electrode. It may be formed of the same material as the upper electrode 362 of (360).

A second planarization layer 317 is formed on the dummy electrode 360 and the first auxiliary wire 340 . The second planarization layer 317 is an insulating layer for planarizing upper portions of the dummy electrode 360 and the first auxiliary wire 340 . The second planarization layer 317 may be formed of the same material as the first planarization layer 315 . The second planarization layer 317 is formed only in the display area DA and is not formed in the pad area PA.

An anode 337 of the organic light emitting element 330 is formed on the second planarization layer 317 . The anode 337 is formed on the upper surface of the second planarization layer 317 and is electrically connected to the thin film transistor 320 through the dummy electrode 360 . The anode 337 includes a structure in which a lower ITO layer 331, a silver alloy layer 332, and an upper ITO layer 333 are stacked.

A second auxiliary wire 370 is formed on the second planarization layer 317 . Specifically, the second auxiliary wire 370 is formed on the upper surface of the second planarization layer 317 and is electrically connected to the first auxiliary wire 340 . The second auxiliary wire 370 includes a first layer 371 , a second layer 372 on the first layer 371 , and a third layer 373 on the second layer 372 . The second auxiliary wire 370 and the anode 337 may be formed of the same material on the same plane. That is, the first layer 371 of the second auxiliary wire 370 is formed of the same material as the lower ITO layer 331 of the anode 337, and the second layer 372 of the second auxiliary wire 370 is The silver alloy layer 332 of the anode 337 is formed of the same material, and the third layer 373 of the second auxiliary wire 370 is formed of the same material as the upper ITO layer 333 of the anode 337. can In the organic light emitting diode display 300 according to another embodiment of the present invention, the first auxiliary wire 340 and the second auxiliary wire 370 electrically connected to the cathode 339 are used to generate top emission type organic light emitting light. The resistance of the cathode 339 in the display device 300 may be further reduced, and accordingly, uniform picture quality characteristics may be secured.

A bank layer 316 is formed on the second planarization layer 317, and an organic light emitting layer 338 of the organic light emitting element 330 is formed on a portion of the anode 337 opened by the bank layer 316. do. A cathode 339 of the organic light emitting element 330 is formed on the organic light emitting layer 338, and the cathode 339 is connected to the second auxiliary line 370 through a portion of the second auxiliary wire 370 opened by the bank layer 316. It is electrically connected to the auxiliary wire 370 .

The pad electrode 350 is formed on the substrate 110 in the pad area PA. Specifically, the pad electrode 350 is formed on the interlayer insulating layer 113 . The pad electrode 350 is composed of a plurality of conductive layers. Referring to FIG. 3 , the pad electrode 350 includes a first conductive layer 351 , a second conductive layer 352 on the first conductive layer 351 , and a third conductive layer 353 on the second conductive layer 352 . ) is formed. The first conductive layer 351 of the pad electrode 350 is formed of the same material as the source electrode 123 and the drain electrode 124 of the thin film transistor 320 formed in the display area DA. The second conductive layer 352 of the pad area PA is formed of the same material as the lower electrode 361 of the dummy electrode 360 and the first layer 341 of the first auxiliary line 340, and the pad area ( The third conductive layer 353 of the PA) is formed of the same material as the upper electrode 362 of the dummy electrode 360 and the second layer 342 of the first auxiliary wire 340 . Compared to the pad electrode 350 of FIG. 2 , the pad electrode 350 of FIG. 3 is formed of the same material as the second conductive layer 352 and the third conductive layer 353 of the pad electrode 350 only. Since these are only different, duplicate descriptions are omitted.

In the organic light emitting display device 300 according to another embodiment of the present invention, the silver alloy layer and the ITO layer used in the anode 337 are not used as the pad electrode 350, and the pad electrode 350 is the source electrode 123 ) and the same material as the drain electrode 124 and a conductive material used as the first auxiliary wire 340 are used as the pad electrode 350 . In addition, the third conductive layer 353, which is the uppermost layer of the pad electrode 350, is formed to cover the first conductive layer 351 and the second conductive layer 352 of the pad electrode 350, in particular, the third conductive layer 353. The layer 353 is formed to cover both the upper and side surfaces of the second conductive layer 352 . Here, the molybdenum-titanium (MoTi) alloy, which is a material used as the third conductive layer 353, covers the entire second conductive layer 352 in which copper (Cu) is formed as the uppermost layer, thereby forming the second conductive layer 352. The anode 337 is prevented from being lost in the batch etching process of the upper ITO layer 333, the silver alloy layer 332, and the lower ITO layer 331, and the second conductive layer 352 reacts with moisture, resulting in a poor pad Formation of the electrode 350 may be prevented. In addition, the pad electrode 350 can be more easily formed by forming the second conductive layer 352 and the third conductive layer 353 of the pad electrode 350 with the same material as that of the first auxiliary wire 340 . there is.

4 is a schematic cross-sectional view of an organic light emitting display device according to another exemplary embodiment of the present invention. Compared to the OLED display 300 shown in FIG. 3 , the organic light emitting display device 400 shown in FIG. 4 includes an anode 437 , a dummy electrode 360 , a first auxiliary wire 440 , and a second auxiliary wire. Only the wiring 470 is different, and other components are substantially the same, so duplicate descriptions are omitted.

Referring to FIG. 4 , a dummy electrode 460 is formed on the first planarization layer 115 . The dummy electrode 460 is formed on the top surface of the first planarization layer 115 to electrically connect the thin film transistor 120 and the anode 437 . The dummy electrode 460 is composed of a single electrode. The dummy electrode 460 may have a structure in which a molybdenum-titanium (MoTi) alloy layer, a copper (Cu) layer, and a molybdenum-titanium (MoTi) alloy layer are stacked, and the dummy electrode 460 is the source electrode 423 And it may be formed of the same material as the drain electrode 424 .

A first auxiliary wire 440 is formed on the first planarization layer 115 . The first auxiliary wire 440 is formed on the top surface of the first planarization layer 115 and is formed of the same material as the dummy electrode 460 on the same plane. The first auxiliary wire 440 is composed of a single layer. The first auxiliary wire 440 may be formed of the same material as the dummy electrode 460 .

A second planarization layer 417 is formed on the dummy electrode 460 and the first auxiliary wire 440 . The second planarization layer 417 is an insulating layer for planarizing upper portions of the dummy electrode 460 and the first auxiliary wire 440 . The second planarization layer 417 may be formed of the same material as the first planarization layer 415 . The second planarization layer 417 is formed only in the display area DA and is not formed in the pad area PA.

An anode 437 of the organic light emitting element 430 is formed on the second planarization layer 417 . The anode 437 is formed on the upper surface of the second planarization layer 417 and is electrically connected to the thin film transistor 420 through the dummy electrode 460 . The anode 437 includes a stacked structure of a dummy layer 434 , a lower ITO layer 431 , a silver alloy layer 432 , and an upper ITO layer 433 . The dummy layer 434 of the anode 437 is formed to contact the rear surface of the lower ITO layer 431 and is electrically connected to the dummy electrode 460 . The dummy layer 434 of the anode 437 may be formed of a molybdenum-titanium (MoTi) alloy.

A second auxiliary wire 470 is formed on the second planarization layer 417 . Specifically, the second auxiliary wire 470 is formed on the upper surface of the second planarization layer 417 and is electrically connected to the first auxiliary wire 440 . The second auxiliary wire 470 includes a first layer 471 , a second layer 472 on the first layer 471 , a third layer 473 on the second layer 472 , and a layer on the third layer 473 . It is composed of a fourth layer (474). The second auxiliary wire 470 and the anode 437 may be formed of the same material on the same plane. That is, the first layer 471 of the second auxiliary wire 470 is formed of the same material as the lower ITO layer 431 of the anode 437, and the second layer 472 of the second auxiliary wire 470 is The silver alloy layer 432 of the anode 437 is formed of the same material, the third layer 473 of the second auxiliary wire 470 is formed of the same material as the upper ITO layer 433 of the anode 437, , the fourth layer 474 of the second auxiliary wire 470 may be formed of the same material as the dummy layer 434 of the anode 437 . In the organic light emitting diode display 400 according to another exemplary embodiment of the present invention, the first auxiliary wire 440 and the second auxiliary wire 470 electrically connected to the cathode 439 are used to generate a top emission type organic light emitting display. A luminance non-uniformity problem that may occur in the light emitting display device 400 may be solved.

A bank layer 416 is formed on the second planarization layer 417, and an organic light emitting layer 438 of the organic light emitting device 430 is formed on a portion of the anode 437 opened by the bank layer 416. do. A cathode 439 of the organic light emitting element 430 is formed on the organic light emitting layer 438, and the cathode 439 is connected to the second auxiliary line 470 through a portion of the second auxiliary wire 470 opened by the bank layer 416. It is electrically connected to the auxiliary wire 470 .

The pad electrode 450 is formed on the substrate 110 in the pad area PA. Specifically, the pad electrode 450 is formed on the interlayer insulating layer 113 . The pad electrode 450 is formed of a first conductive layer 451 , a second conductive layer 452 on the first conductive layer 451 , and a third conductive layer 453 on the second conductive layer 452 . The first conductive layer 451 of the pad electrode 450 is formed of the same material as the source electrode 423 and the drain electrode 424 of the thin film transistor 420 formed in the display area DA. The second conductive layer 452 of the pad area PA is formed of the same material as the dummy electrode 460 and the first auxiliary wire 440, and the third conductive layer 453 of the pad area PA is an anode ( The dummy layer 434 of 437 and the fourth layer 474 of the second auxiliary wire 470 are made of the same material. Compared to the pad electrode 350 of FIG. 3 , the pad electrode 450 of FIG. 4 is formed of the same material as the second conductive layer 452 and the third conductive layer 453 of the pad electrode 450 only. Since these are only different, duplicate descriptions are omitted.

In the organic light emitting display device 400 according to another embodiment of the present invention, the silver alloy layer 432 and the ITO layer used in the anode 437 are not used as the pad electrode 450, and the pad electrode 450 is a source The same material as the electrode 423 and the drain electrode 424 and a conductive material used as the first auxiliary wire 440 are used as the pad electrode 450 . In addition, the third conductive layer 453, which is the uppermost layer of the pad electrode 450, is formed to cover the first conductive layer 451 and the second conductive layer 452 of the pad electrode 450, and in particular, the third conductive layer 453. The layer 453 is formed to cover both the upper and side surfaces of the second conductive layer 452 . Here, the molybdenum-titanium (MoTi) alloy, which is a material used as the third conductive layer 453, covers the entire second conductive layer 452 in which copper (Cu) is formed as the uppermost layer, thereby forming the second conductive layer 452. The upper ITO layer 433 of the anode 437, the silver alloy layer 432, and the lower ITO layer 431 are not lost in the batch etching process, and the second conductive layer 452 reacts with moisture, resulting in a poor pad Formation of the electrode 450 may be prevented. In addition, the second conductive layer 452 and the third conductive layer 453 of the pad electrode 450 are formed of the same material as the first auxiliary wire 440 and the second auxiliary wire 470, so that the pad can be made more easily. An electrode 450 may be formed.

5 is a flowchart illustrating a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention. 6A to 6D are schematic cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment of the present invention. 6A to 6D are process cross-sectional views for explaining a manufacturing method of the organic light emitting display device 100 shown in FIGS. 1 and 2 , and redundant description of components described with reference to FIGS. 1 and 2 will be omitted. do.

First, the substrate 110 defined by the display area DA and the pad area PA is provided (S50), and the active layer 122 and the gate electrode 121 are formed on the display area DA of the substrate 110. , and the thin film transistor 120 having the source electrode 123 and the drain electrode 124 and the first conductive layer 151 of the pad electrode 150 formed on the pad area PA of the substrate 110 at the same time. Do (S51).

Referring to FIG. 6A , a buffer layer 111 is formed on the substrate 110 in which the display area DA and the pad area PA are defined. The buffer layer 111 is formed on the display area DA and the pad area PA.

A thin film transistor 120 is formed on the display area DA of the substrate 110 . An active layer 122 is formed on the buffer layer 111 , and a gate insulating layer 112 and a gate electrode 121 are formed on the active layer 122 . When the gate insulating layer 112 and the gate electrode 121 are formed, a material for the gate insulating layer and a material for the gate electrode are formed on the entire surface of the substrate 110, and then the material for the insulating layer and the material for the gate electrode are simultaneously patterned to insulate the gate. A layer 112 and a gate electrode 121 are formed. An interlayer insulating layer 113 is formed on the gate insulating layer 112 and the gate electrode 121 . The interlayer insulating layer 113 is formed on the display area DA and the pad area PA. A contact hole through which the source electrode 123 and the drain electrode 124 are electrically connected to the active layer 122 is formed in the interlayer insulating layer 113 . After that, materials for the source and drain electrodes are formed on the entire surface of the substrate 110, and the materials for the source and drain electrodes are patterned to form the source electrode 123 and the drain electrode 124. At this time, the first conductive layer 151 of the pad electrode 150 is formed on the pad area PA of the substrate 110 . That is, when patterning the materials for the source and drain electrodes formed on the entire surface of the substrate 110, the first conductive layer 151 of the pad electrode 150 remains in the pad area PA, so that the source electrode 123, The drain electrode 124 and the first conductive layer 151 of the pad electrode 150 may be formed of the same material at the same time.

Subsequently, a first planarization layer 115 is formed to cover the thin film transistor 120 (S52), and a dummy layer ( 134) and the second conductive layer 152 and the third conductive layer 153 of the pad electrode 150 covering the first conductive layer 151 of the pad electrode 150 are simultaneously formed (S53).

Referring to FIG. 6B , a passivation layer 114 for protecting the thin film transistor 120 is formed on the thin film transistor 120 . The passivation layer 114 is formed on both the display area DA and the pad area PA.

Subsequently, a first planarization layer 115 for planarizing an upper portion of the thin film transistor 120 is formed on the thin film transistor 120 . The first planarization layer 115 is formed only in the display area DA of the substrate 110 .

Then, the lower layer 135 of the dummy layer 134 of the anode 137 and the first layer 141 of the first auxiliary wire 140 are formed on the first planarization layer 115 in the display area DA. , the second conductive layer 152 of the pad electrode 150 is formed on the interlayer insulating layer 113 in the pad area PA. Specifically, a material for a lower layer of the dummy layer 134 is formed on the first planarization layer 115 of the display area DA and the interlayer insulating layer 113 of the pad area PA. That is, the material for the lower layer of the dummy layer 134 is formed on the entire surface of the substrate 110 . Thereafter, the material for the lower layer of the dummy layer 134 is patterned to form the lower layer 135 of the dummy layer 134, the first layer 141 of the first auxiliary wire 140, and the second conductive layer of the pad electrode 150. Layer 152 is formed of the same material at the same time.

Next, referring to FIG. 6C , an upper layer 136 of the dummy layer 134 is formed on the lower layer 135 of the dummy layer 134 in the display area DA, and the first auxiliary line 140 of the first auxiliary line 140 is formed. A second layer 142 is formed on the layer 141 . In addition, a third conductive layer 153 is formed on the second conductive layer 152 of the pad electrode 150 in the pad area PA. Specifically, the first planarization layer 115 of the display area DA, the lower layer 135 of the dummy layer 134, the first layer 141 of the first auxiliary line 140, and the passivation of the pad area PA. A material for an upper layer of the dummy layer 134 is formed on the layer 114 and the second conductive layer 152 of the pad electrode 150 . That is, the material for the upper layer of the dummy layer 134 is formed on the entire surface of the substrate 110 . Thereafter, the material for the upper layer of the dummy layer 134 is patterned to form the upper layer 136 of the dummy layer 134, the second layer 142 of the first auxiliary wire 140, and the third conductive layer of the pad electrode 150. Layer 153 is formed of the same material at the same time. The third conductive layer 153 of the pad electrode 150 is formed to cover the second conductive layer 152 of the pad electrode 150 .

Subsequently, the remaining layers of the anode 137 are formed on the dummy layer 134 of the anode 137 (S54).

Referring to FIG. 6D , an ITO material, a silver alloy material, and an ITO material are sequentially formed on the dummy layer 134 of the anode 137 and the second layer 142 of the first auxiliary wire 140 . Here, the ITO material, the silver alloy material, and the ITO material are formed not only in the display area DA of the substrate 110 but also in the pad area PA of the substrate 110 . Thereafter, the ITO material, the silver alloy material, and the ITO material are collectively etched to form the lower ITO layer 131, which is the remaining layer of the anode 137, on the dummy layer 134 of the anode 137, the silver alloy layer 132, and An upper ITO layer 133 is formed. In addition, during the batch etching process, the third layer 143, the fourth layer 144, and the fifth layer 145 of the first auxiliary wire 140 are the lower ITO layer 131 of the anode 137, the silver alloy layer (132) and the upper ITO layer (133).

Then, the bank layer 116 is formed to cover the edges of the anode 137 and the first auxiliary electrode, and the organic light emitting layer 138 and the cathode 139 are sequentially formed.

In the organic light emitting diode display manufacturing method according to an exemplary embodiment of the present invention, the pad electrode 150 may be simultaneously formed when the first auxiliary wire 140 is formed. Accordingly, the pad electrode 150 can be formed without adding a separate process for forming the pad electrode 150 . In addition, the third conductive layer 153 of the pad electrode 150 formed of a molybdenum-titanium (MoTi) alloy without using the silver alloy layer 132 as the pad electrode 150 is the second conductive layer of the pad electrode 150. Formed to cover the layer 152, it is possible to secure the pad electrode 150 having improved reliability.

7 is a flowchart illustrating a method of manufacturing an organic light emitting diode display according to another exemplary embodiment of the present invention. 8A to 8C are schematic cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to another exemplary embodiment of the present invention. 8A to 8C are process cross-sectional views for explaining a manufacturing method of the organic light emitting diode display 300 shown in FIG. 3 , and redundant descriptions of components described with reference to FIG. 3 will be omitted.

First, the substrate 110 defined by the display area DA and the pad area PA is provided (S70), and the active layer 122 and the gate electrode 121 are formed on the display area DA of the substrate 110. , and the thin film transistor 120 having the source electrode 123 and the drain electrode 124 and the first conductive layer 351 of the pad electrode 350 formed on the pad area PA of the substrate 110 at the same time. (S71), and a first planarization layer 115 is formed to cover the thin film transistor 120 (S72). Since steps S70, S71, and S72 are substantially the same as steps S60, S61, and S62, redundant descriptions are omitted.

Subsequently, a dummy electrode 360 electrically connected to the thin film transistor 120 and a first auxiliary wire 340 are simultaneously formed on the upper surface of the first planarization layer 115 (S73), and the first conductive pad electrode 350 is formed. A second conductive layer 352 and a third conductive layer 353 of the pad electrode 350 covering the layer 351 are formed (S74).

Referring to FIG. 8A , the lower electrode 361 of the dummy electrode 360 and the first layer 341 of the first auxiliary wire 340 are formed on the first planarization layer 115 in the display area DA. , the second conductive layer 352 of the pad electrode 350 is formed on the interlayer insulating layer 113 in the pad area PA. Specifically, the material for the lower electrode of the dummy electrode 360 is formed on the first planarization layer 115 of the display area DA and the interlayer insulating layer 113 of the pad area PA. That is, the material for the lower electrode of the dummy electrode 360 is formed on the entire surface of the substrate 110 . Thereafter, the material for the lower electrode of the dummy electrode 360 is patterned to form the lower electrode 361 of the dummy electrode 360, the first layer 341 of the first auxiliary wire 340, and the pad electrode 350. Two conductive layers 352 are formed of the same material at the same time.

Next, referring to FIG. 8B , an upper electrode 362 is formed on the lower electrode 361 of the dummy electrode 360 in the display area DA, and the first layer 341 of the first auxiliary wire 340 is formed. A second layer 342 is formed thereon. In addition, a third conductive layer 353 is formed on the second conductive layer 352 of the pad electrode 350 in the pad area PA. Specifically, the first planarization layer 115 of the display area DA, the lower electrode 361 of the dummy electrode 360, the first layer 341 of the first auxiliary line 340, and the pad area PA. A material for an upper electrode of the dummy electrode 360 is formed on the passivation layer 114 and the second conductive layer 352 of the pad electrode 350 . That is, the material for the upper electrode of the dummy electrode 360 is formed on the entire surface of the substrate 110 . Thereafter, the material for the upper electrode of the dummy electrode 360 is patterned to form the upper electrode 362 of the dummy electrode 360, the second layer 342 of the first auxiliary wire 340, and the pad electrode 350. Three conductive layers 353 are formed of the same material at the same time. The third conductive layer 353 of the pad electrode 350 is formed to cover the second conductive layer 352 of the pad electrode 350 .

Subsequently, a second planarization layer 317 is formed to cover the dummy electrode 360 and the first auxiliary wire 340 (S75), and is electrically connected to the dummy electrode 360 on the upper surface of the second planarization layer 317. A second auxiliary wire 370 electrically connected to the anode 337 and the first auxiliary wire 340 is formed (S76).

Referring to FIG. 8C , a second planarization layer 317 is formed to planarize the upper portions of the dummy electrode 360 and the first auxiliary wire 340 . The second planarization layer 317 is formed only in the display area DA.

Subsequently, an ITO material, a silver alloy material, and an ITO material are sequentially formed on the second planarization layer 317 . Here, the ITO material, the silver alloy material, and the ITO material are formed not only in the display area DA of the substrate 110 but also in the pad area PA of the substrate 110 . Thereafter, the ITO material, the silver alloy material, and the ITO material are collectively etched to form the lower ITO layer 331 of the anode 337, the silver alloy layer 332, and the upper ITO layer 333 on the second planarization layer 317. ) is formed, and in the process of batch etching, the first layer 371, the second layer 372, and the third layer 373 of the second auxiliary wire 370 are the lower ITO layer 331 of the anode 337, The silver alloy layer 332 and the upper ITO layer 333 are formed simultaneously.

In the organic light emitting diode display manufacturing method according to another embodiment of the present invention, the pad electrode 350 may be simultaneously formed when the first auxiliary wire 340 is formed. Accordingly, the pad electrode 350 may be formed without adding a separate process for forming the pad electrode 350 . In addition, the third conductive layer 353 of the pad electrode 350 formed of a molybdenum-titanium (MoTi) alloy without using the silver alloy layer 332 as the pad electrode 350 is the second conductive layer of the pad electrode 350. Formed to cover the layer 352, it is possible to secure the pad electrode 350 having improved reliability.

9A to 9C are schematic cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to another exemplary embodiment of the present invention. 9A to 9C are process cross-sectional views for explaining a manufacturing method of the organic light emitting diode display 400 shown in FIG. 4 , and redundant description of components described with reference to FIG. 4 will be omitted.

First, the substrate 110 defined by the display area DA and the pad area PA is provided (S70), and the active layer 122 and the gate electrode 121 are formed on the display area DA of the substrate 110. , and the thin film transistor 120 having the source electrode 123 and the drain electrode 124 and the first conductive layer 451 of the pad electrode 450 formed on the pad area PA of the substrate 110 at the same time. (S71), and a first planarization layer 115 is formed to cover the thin film transistor 120 (S72). Since steps S70, S71, and S72 are substantially the same as steps S60, S61, and S62, redundant descriptions are omitted.

Subsequently, a dummy electrode 460 electrically connected to the thin film transistor 120 and a first auxiliary wire 440 are simultaneously formed on the upper surface of the first planarization layer 115 (S73), and the first conductive pad electrode 450 is formed. A second conductive layer 452 and a third conductive layer 453 of the pad electrode 450 covering the layer 451 are formed (S74) to cover the dummy electrode 460 and the first auxiliary wire 440. A second planarization layer 417 is formed (S75), the anode 437 electrically connected to the dummy electrode 460 on the top surface of the second planarization layer 417, and the second planarization layer 417 electrically connected to the first auxiliary wire 440. An auxiliary wire 470 is formed (S76).

Referring to FIG. 9A , the dummy electrode 460 and the first auxiliary wire 440 are formed on the first planarization layer 115 in the display area DA, and the interlayer insulating layer 113 is formed in the pad area PA. A second conductive layer 452 of the pad electrode 450 is formed on the top. Specifically, a material for a dummy electrode is formed on the first planarization layer 115 of the display area DA and the interlayer insulating layer 113 of the pad area PA. That is, a material for a dummy electrode is formed on the entire surface of the substrate 410 . After that, the material for the dummy electrode is patterned so that the dummy electrode 460 , the first auxiliary wire 440 and the second conductive layer 452 of the pad electrode 450 are simultaneously formed of the same material.

Next, referring to FIG. 9B , a second planarization layer 417 is formed to planarize the upper portions of the dummy electrode 460 and the first auxiliary wire 440 . The second planarization layer 417 is formed only in the display area DA.

Next, the dummy layer 434 of the anode 437 and the fourth layer 474 of the second auxiliary wire 470 are formed on the second planarization layer 417 in the display area DA. In addition, a third conductive layer 453 is formed on the second conductive layer 452 of the pad electrode 450 in the pad area PA. Specifically, the dummy anode 437 is formed on the second planarization layer 417 of the display area DA, the passivation layer 414 of the pad area PA, and the second conductive layer 452 of the pad electrode 450. The material for the layer is formed. That is, a material for the dummy layer of the anode 437 is formed on the entire surface of the substrate 410 . Then, the material for the dummy layer is patterned so that the dummy layer 434 of the anode 437, the fourth layer 474 of the second auxiliary wire 470, and the third conductive layer 453 of the pad electrode 450 are simultaneously formed. made of the same material. The third conductive layer 453 of the pad electrode 450 is formed to cover the second conductive layer 452 of the pad electrode 450 .

Subsequently, an ITO material, a silver alloy material, and an ITO material are sequentially formed on the second planarization layer 417 . Here, the ITO material, the silver alloy material, and the ITO material are formed not only in the display area DA of the substrate 410 but also in the pad area PA of the substrate 110 . Thereafter, the ITO material, the silver alloy material, and the ITO material are etched together to form the lower ITO layer 431 of the anode 437, the silver alloy layer 432, and the upper ITO layer 434 of the anode 437 on the dummy layer 434 of the anode 437. A layer 433 is formed, and the first layer 371, the second layer 372, and the third layer of the second auxiliary wire 470 are formed on the fourth layer of the second auxiliary wire 470 in a batch etching process. 373 is formed simultaneously with the lower ITO layer 431 , the silver alloy layer 432 , and the upper ITO layer 433 of the anode 437 .

In the organic light emitting diode display manufacturing method according to another embodiment of the present invention, the pad electrode 450 may be simultaneously formed when the first auxiliary wire 440 is formed. Accordingly, the pad electrode 450 may be formed without adding a separate process for forming the pad electrode 450 . In addition, the third conductive layer 453 of the pad electrode 450 formed of a molybdenum-titanium (MoTi) alloy without using the silver alloy layer 432 as the pad electrode 450 is the second conductive layer of the pad electrode 450. Formed to cover the layer 452, it is possible to secure the pad electrode 450 having improved reliability.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and may be variously modified and implemented without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be construed according to the claims below, and all technical ideas within the equivalent range should be construed as being included in the scope of the present invention.

100, 300, 400: organic light emitting display device
110: substrate
111: buffer layer
112: gate insulating layer
113: interlayer insulating layer
114: passivation layer
115: first planarization layer
116, 316, 416: bank layer
317, 417: second planarization layer
120: thin film transistor
121: gate electrode
122: active layer
123: source electrode
124: drain electrode
130, 330, 430: organic light emitting element
131, 331, 431: lower ITO layer
132, 332, 432: silver alloy layer
133, 333, 433: upper ITO layer
134, 434: dummy layer
135: lower layer
136: upper layer
137, 337, 437: anode
138, 338, 438: organic light emitting layer
139, 339, 439: cathode
140, 340, 440: first auxiliary wire
141, 341: first layer of first auxiliary wiring
142, 342: second layer of first auxiliary wiring
143 Third layer of first auxiliary wiring
144: fourth layer of first auxiliary wiring
145: fifth layer of first auxiliary wiring
150, 350, 450: pad electrode
151, 351, 451: first conductive layer
152, 352, 452: second conductive layer
153, 353, 453: third conductive layer
360, 460: dummy electrode
361: lower electrode
362: upper electrode
370, 470: second auxiliary wire
371, 471: first layer of second auxiliary wiring
372, 472: second layer of second auxiliary wiring
373, 473: third layer of second auxiliary wiring
474: fourth layer of second auxiliary wiring
DA: display area
PA: pad area

Claims (15)

Board;
a pad electrode disposed on the substrate and including a plurality of conductive layers;
a thin film transistor disposed on the substrate and including a source electrode and a drain electrode;
a passivation layer disposed on the source electrode and the drain electrode;
a first planarization layer disposed on the passivation layer;
a dummy electrode disposed on the first planarization layer and electrically connected to one of the source electrode and the drain electrode;
a first auxiliary wire disposed on the first planarization layer and made of the same material as a conductive layer of at least a portion of a plurality of conductive layers of the dummy electrode and the pad electrode;
a second planarization layer disposed on the dummy electrode and the first auxiliary wire;
an organic light emitting device disposed on the second planarization layer, electrically connected to the dummy electrode, and including an anode including a silver alloy layer and an indium tin oxide (ITO) layer, and a cathode disposed on the anode;
a bank layer disposed between the anode and the cathode; and
It is disposed on the second planarization layer and includes a second auxiliary wire made of the same material on the same plane as the anode,
The plurality of conductive layers of the pad electrode,
a first conductive layer disposed between the substrate and the passivation layer and made of the same material as the source electrode and the drain electrode;
a second conductive layer disposed on the first conductive layer and including a copper (Cu) layer; and
a third conductive layer disposed on the second conductive layer and made of a molybdenum-titanium alloy;
The anode is made of a material different from that of the first conductive layer, the second conductive layer, and the third conductive layer of the pad electrode,
The second auxiliary wire is electrically connected to the cathode through a partial area opened from the bank layer. delete delete delete delete According to claim 1,
The second conductive layer is disposed on the passivation layer and is connected to the first conductive layer through a contact hole of the passivation layer. According to claim 6,
wherein the first conductive layer, the source electrode, and the drain electrode include a molybdenum-titanium (MoTi) alloy layer and a copper (Cu) layer stacked on the molybdenum-titanium alloy layer. According to claim 7,
The second conductive layer is made of a molybdenum-titanium (MoTi) alloy layer and the copper (Cu) layer disposed on the molybdenum-titanium alloy layer,
wherein the second conductive layer, the lower electrode of the dummy electrode, and the first layer of the first auxiliary wire are made of the same material. delete According to claim 6,
The third conductive layer is configured to cover the top and side surfaces of the second conductive layer,
The third conductive layer of the pad electrode, the second layer of the first auxiliary wire, and the upper electrode of the dummy electrode are made of the same material, and the second layer of the first auxiliary wire and the upper electrode of the dummy electrode are formed of the anode. An organic light emitting display device made of a material different from delete delete delete delete delete