KR20130108133A - 박막 트랜지스터, 그 제조 방법 및 전자 기기 - Google Patents

박막 트랜지스터, 그 제조 방법 및 전자 기기 Download PDF

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KR20130108133A
KR20130108133A KR1020130027981A KR20130027981A KR20130108133A KR 20130108133 A KR20130108133 A KR 20130108133A KR 1020130027981 A KR1020130027981 A KR 1020130027981A KR 20130027981 A KR20130027981 A KR 20130027981A KR 20130108133 A KR20130108133 A KR 20130108133A
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South Korea
Prior art keywords
thin film
channel layer
film transistor
oxide semiconductor
plane
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KR1020130027981A
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English (en)
Korean (ko)
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미키히로 요코제키
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소니 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

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  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020130027981A 2012-03-23 2013-03-15 박막 트랜지스터, 그 제조 방법 및 전자 기기 Ceased KR20130108133A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012067662A JP2013201211A (ja) 2012-03-23 2012-03-23 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器
JPJP-P-2012-067662 2012-03-23

Publications (1)

Publication Number Publication Date
KR20130108133A true KR20130108133A (ko) 2013-10-02

Family

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KR1020130027981A Ceased KR20130108133A (ko) 2012-03-23 2013-03-15 박막 트랜지스터, 그 제조 방법 및 전자 기기

Country Status (5)

Country Link
US (1) US8957416B2 (https=)
JP (1) JP2013201211A (https=)
KR (1) KR20130108133A (https=)
CN (1) CN103325817A (https=)
TW (1) TWI500165B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10109707B2 (en) * 2014-03-31 2018-10-23 Flosfia Inc. Crystalline multilayer oxide thin films structure in semiconductor device
US10090388B2 (en) 2014-03-31 2018-10-02 Flosfia Inc. Crystalline multilayer structure and semiconductor device
US9634097B2 (en) 2014-11-25 2017-04-25 Sandisk Technologies Llc 3D NAND with oxide semiconductor channel
CN104934330A (zh) * 2015-05-08 2015-09-23 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板和显示面板
TWI611587B (zh) * 2016-08-31 2018-01-11 明新科技大學 氧化物薄膜電晶體
WO2018111247A1 (en) 2016-12-13 2018-06-21 Intel Corporation Passivation dielectrics for oxide semiconductor thin film transistors
KR102304800B1 (ko) * 2019-12-17 2021-09-24 한양대학교 산학협력단 Igo 채널층 기반의 메모리 장치 및 그 제조방법
JP7326795B2 (ja) * 2019-03-20 2023-08-16 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
JP7180492B2 (ja) * 2019-03-26 2022-11-30 Tdk株式会社 誘電体膜および電子部品
US11616057B2 (en) 2019-03-27 2023-03-28 Intel Corporation IC including back-end-of-line (BEOL) transistors with crystalline channel material
US20250151354A1 (en) * 2021-10-14 2025-05-08 Idemitsu Kosan Co., Ltd. Crystalline oxide thin film, method for producing same, thin film transistor, and method for producing same
CN119498029A (zh) * 2022-08-25 2025-02-21 株式会社日本显示器 氧化物半导体膜、薄膜晶体管及电子设备
WO2026047505A1 (ja) * 2024-08-30 2026-03-05 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003098699A1 (fr) * 2002-05-22 2003-11-27 Sharp Kabushiki Kaisha Dispositif semiconducteur et afficheur comprenant ce dispositif
US20090090914A1 (en) * 2005-11-18 2009-04-09 Koki Yano Semiconductor thin film, method for producing the same, and thin film transistor
JP5306179B2 (ja) * 2007-03-20 2013-10-02 出光興産株式会社 スパッタリングターゲット、酸化物半導体膜及び半導体デバイス
JP5242083B2 (ja) 2007-06-13 2013-07-24 出光興産株式会社 結晶酸化物半導体、及びそれを用いてなる薄膜トランジスタ
WO2009093625A1 (ja) * 2008-01-23 2009-07-30 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置
EP2086014B1 (en) * 2008-02-01 2012-12-26 Ricoh Company, Ltd. Method for producing conductive oxide-deposited substrate and MIS laminated structure
KR20120049899A (ko) * 2009-09-04 2012-05-17 스미또모 가가꾸 가부시키가이샤 반도체 기판, 전계 효과 트랜지스터, 집적 회로 및 반도체 기판의 제조 방법
JP2011066070A (ja) * 2009-09-15 2011-03-31 Idemitsu Kosan Co Ltd 多結晶薄膜、その成膜方法、及び薄膜トランジスタ
KR101835300B1 (ko) 2009-12-08 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2011159697A (ja) * 2010-01-29 2011-08-18 Dainippon Printing Co Ltd 薄膜トランジスタ搭載基板、その製造方法及び画像表示装置
CN102844847B (zh) * 2010-04-16 2015-09-23 株式会社半导体能源研究所 沉积方法及半导体装置的制造方法
KR102143469B1 (ko) * 2010-07-27 2020-08-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2012169344A (ja) * 2011-02-10 2012-09-06 Sony Corp 薄膜トランジスタならびに表示装置および電子機器

Also Published As

Publication number Publication date
JP2013201211A (ja) 2013-10-03
US20130248852A1 (en) 2013-09-26
US8957416B2 (en) 2015-02-17
TW201340334A (zh) 2013-10-01
TWI500165B (zh) 2015-09-11
CN103325817A (zh) 2013-09-25

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