CN103325817A - 薄膜晶体管、薄膜晶体管制造方法及电子设备 - Google Patents

薄膜晶体管、薄膜晶体管制造方法及电子设备 Download PDF

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Publication number
CN103325817A
CN103325817A CN2013100846434A CN201310084643A CN103325817A CN 103325817 A CN103325817 A CN 103325817A CN 2013100846434 A CN2013100846434 A CN 2013100846434A CN 201310084643 A CN201310084643 A CN 201310084643A CN 103325817 A CN103325817 A CN 103325817A
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China
Prior art keywords
film transistor
channel layer
film
thin
thin film
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Pending
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CN2013100846434A
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English (en)
Chinese (zh)
Inventor
横关弥树博
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Joled Inc
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Sony Corp
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Publication of CN103325817A publication Critical patent/CN103325817A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

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  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN2013100846434A 2012-03-23 2013-03-15 薄膜晶体管、薄膜晶体管制造方法及电子设备 Pending CN103325817A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012067662A JP2013201211A (ja) 2012-03-23 2012-03-23 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器
JP2012-067662 2012-03-23

Publications (1)

Publication Number Publication Date
CN103325817A true CN103325817A (zh) 2013-09-25

Family

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Family Applications (1)

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CN2013100846434A Pending CN103325817A (zh) 2012-03-23 2013-03-15 薄膜晶体管、薄膜晶体管制造方法及电子设备

Country Status (5)

Country Link
US (1) US8957416B2 (https=)
JP (1) JP2013201211A (https=)
KR (1) KR20130108133A (https=)
CN (1) CN103325817A (https=)
TW (1) TWI500165B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
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CN104952927A (zh) * 2014-03-31 2015-09-30 Flosfia株式会社 结晶性层叠结构体,半导体装置
CN104952926A (zh) * 2014-03-31 2015-09-30 Flosfia株式会社 结晶性层叠结构体,半导体装置
CN111747729A (zh) * 2019-03-26 2020-10-09 Tdk株式会社 电介质膜及电子部件

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* Cited by examiner, † Cited by third party
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US9634097B2 (en) 2014-11-25 2017-04-25 Sandisk Technologies Llc 3D NAND with oxide semiconductor channel
CN104934330A (zh) * 2015-05-08 2015-09-23 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板和显示面板
TWI611587B (zh) * 2016-08-31 2018-01-11 明新科技大學 氧化物薄膜電晶體
WO2018111247A1 (en) 2016-12-13 2018-06-21 Intel Corporation Passivation dielectrics for oxide semiconductor thin film transistors
KR102304800B1 (ko) * 2019-12-17 2021-09-24 한양대학교 산학협력단 Igo 채널층 기반의 메모리 장치 및 그 제조방법
JP7326795B2 (ja) * 2019-03-20 2023-08-16 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
US11616057B2 (en) 2019-03-27 2023-03-28 Intel Corporation IC including back-end-of-line (BEOL) transistors with crystalline channel material
US20250151354A1 (en) * 2021-10-14 2025-05-08 Idemitsu Kosan Co., Ltd. Crystalline oxide thin film, method for producing same, thin film transistor, and method for producing same
CN119498029A (zh) * 2022-08-25 2025-02-21 株式会社日本显示器 氧化物半导体膜、薄膜晶体管及电子设备
WO2026047505A1 (ja) * 2024-08-30 2026-03-05 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法

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WO2007058248A1 (ja) * 2005-11-18 2007-05-24 Idemitsu Kosan Co., Ltd. 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ
JP2011066070A (ja) * 2009-09-15 2011-03-31 Idemitsu Kosan Co Ltd 多結晶薄膜、その成膜方法、及び薄膜トランジスタ
US20120205648A1 (en) * 2011-02-10 2012-08-16 Sony Corporation Thin-film transistor, display apparatus and electronic apparatus

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WO2003098699A1 (fr) * 2002-05-22 2003-11-27 Sharp Kabushiki Kaisha Dispositif semiconducteur et afficheur comprenant ce dispositif
JP5306179B2 (ja) * 2007-03-20 2013-10-02 出光興産株式会社 スパッタリングターゲット、酸化物半導体膜及び半導体デバイス
JP5242083B2 (ja) 2007-06-13 2013-07-24 出光興産株式会社 結晶酸化物半導体、及びそれを用いてなる薄膜トランジスタ
WO2009093625A1 (ja) * 2008-01-23 2009-07-30 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置
EP2086014B1 (en) * 2008-02-01 2012-12-26 Ricoh Company, Ltd. Method for producing conductive oxide-deposited substrate and MIS laminated structure
KR20120049899A (ko) * 2009-09-04 2012-05-17 스미또모 가가꾸 가부시키가이샤 반도체 기판, 전계 효과 트랜지스터, 집적 회로 및 반도체 기판의 제조 방법
KR101835300B1 (ko) 2009-12-08 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2011159697A (ja) * 2010-01-29 2011-08-18 Dainippon Printing Co Ltd 薄膜トランジスタ搭載基板、その製造方法及び画像表示装置
CN102844847B (zh) * 2010-04-16 2015-09-23 株式会社半导体能源研究所 沉积方法及半导体装置的制造方法
KR102143469B1 (ko) * 2010-07-27 2020-08-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007058248A1 (ja) * 2005-11-18 2007-05-24 Idemitsu Kosan Co., Ltd. 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ
JP2011066070A (ja) * 2009-09-15 2011-03-31 Idemitsu Kosan Co Ltd 多結晶薄膜、その成膜方法、及び薄膜トランジスタ
US20120205648A1 (en) * 2011-02-10 2012-08-16 Sony Corporation Thin-film transistor, display apparatus and electronic apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104952927A (zh) * 2014-03-31 2015-09-30 Flosfia株式会社 结晶性层叠结构体,半导体装置
CN104952926A (zh) * 2014-03-31 2015-09-30 Flosfia株式会社 结晶性层叠结构体,半导体装置
US10090388B2 (en) 2014-03-31 2018-10-02 Flosfia Inc. Crystalline multilayer structure and semiconductor device
US10535728B2 (en) 2014-03-31 2020-01-14 Flosfia Inc. Crystalline multilayer oxide thin films structure in semiconductor device
US11038026B2 (en) 2014-03-31 2021-06-15 Flosfia Inc. Crystalline multilayer structure and semiconductor device
CN111747729A (zh) * 2019-03-26 2020-10-09 Tdk株式会社 电介质膜及电子部件

Also Published As

Publication number Publication date
JP2013201211A (ja) 2013-10-03
US20130248852A1 (en) 2013-09-26
US8957416B2 (en) 2015-02-17
KR20130108133A (ko) 2013-10-02
TW201340334A (zh) 2013-10-01
TWI500165B (zh) 2015-09-11

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Owner name: JANPAN ORGANIC RATE DISPLAY CO., LTD.

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Application publication date: 20130925