KR20130014602A - 광학 결상 장치 - Google Patents

광학 결상 장치 Download PDF

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Publication number
KR20130014602A
KR20130014602A KR1020127032926A KR20127032926A KR20130014602A KR 20130014602 A KR20130014602 A KR 20130014602A KR 1020127032926 A KR1020127032926 A KR 1020127032926A KR 20127032926 A KR20127032926 A KR 20127032926A KR 20130014602 A KR20130014602 A KR 20130014602A
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KR
South Korea
Prior art keywords
imaging device
optical
unit
component
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020127032926A
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English (en)
Korean (ko)
Inventor
임분 패트릭 콴
Original Assignee
칼 짜이스 에스엠테 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 칼 짜이스 에스엠테 게엠베하 filed Critical 칼 짜이스 에스엠테 게엠베하
Publication of KR20130014602A publication Critical patent/KR20130014602A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
KR1020127032926A 2005-06-02 2006-06-02 광학 결상 장치 Ceased KR20130014602A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US68684905P 2005-06-02 2005-06-02
US60/686,849 2005-06-02
US71497505P 2005-09-08 2005-09-08
US60/714,975 2005-09-08
PCT/EP2006/005263 WO2006128713A2 (en) 2005-06-02 2006-06-02 Optical imaging arrangement

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020087000102A Division KR101346957B1 (ko) 2005-06-02 2006-06-02 광학 결상 장치

Publications (1)

Publication Number Publication Date
KR20130014602A true KR20130014602A (ko) 2013-02-07

Family

ID=36952670

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020127032926A Ceased KR20130014602A (ko) 2005-06-02 2006-06-02 광학 결상 장치
KR1020087000102A Expired - Fee Related KR101346957B1 (ko) 2005-06-02 2006-06-02 광학 결상 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020087000102A Expired - Fee Related KR101346957B1 (ko) 2005-06-02 2006-06-02 광학 결상 장치

Country Status (6)

Country Link
US (2) US7817248B2 (enExample)
EP (2) EP2357529A3 (enExample)
JP (2) JP5237091B2 (enExample)
KR (2) KR20130014602A (enExample)
CN (2) CN102929104B (enExample)
WO (1) WO2006128713A2 (enExample)

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WO2009039883A1 (en) * 2007-09-26 2009-04-02 Carl Zeiss Smt Ag Optical imaging device with thermal stabilization
US8792079B2 (en) * 2007-12-28 2014-07-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method having encoders to measure displacement between optical member and measurement mount and between measurement mount and movable body
DE102008004762A1 (de) 2008-01-16 2009-07-30 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie mit einer Messeinrichtung
NL1036579A1 (nl) * 2008-02-19 2009-08-20 Asml Netherlands Bv Lithographic apparatus and methods.
DE102008026077B4 (de) * 2008-05-30 2017-11-09 Integrated Dynamics Engineering Gmbh Lithographiesystem
DE102008030664A1 (de) * 2008-07-01 2010-01-21 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit Bestimmung von Abbildungsfehlern
DE102009013720A1 (de) * 2009-03-20 2010-09-23 Carl Zeiss Smt Ag Verfahren zur Ausrichtung von Referenzkomponenten von Projektionsobjektiven, Projektionsobjektiv für die Halbleiterlithographie und Hilfselement
DE102009043501A1 (de) 2009-09-30 2011-03-31 Carl Zeiss Smt Gmbh Optisches System, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
DE102009054860A1 (de) 2009-12-17 2011-06-22 Carl Zeiss SMT GmbH, 73447 Optisches System, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
JP5432382B2 (ja) 2009-09-30 2014-03-05 カール・ツァイス・エスエムティー・ゲーエムベーハー 特にマイクロリソグラフィ投影露光装置の光学システム
US20120127445A1 (en) * 2010-11-18 2012-05-24 Akimitsu Ebihara Isolation system for an optical element of an exposure apparatus
EP2726939B1 (en) 2011-07-01 2020-09-16 Carl Zeiss SMT GmbH Optical imaging arrangement with individually actively supported components
JP6121524B2 (ja) * 2012-05-31 2017-04-26 カール・ツァイス・エスエムティー・ゲーエムベーハー 複数の計測支持ユニットを有する光学結像装置
JP6066592B2 (ja) 2012-06-12 2017-01-25 キヤノン株式会社 露光装置及びデバイス製造方法
CN105593761B (zh) * 2013-09-30 2018-03-20 卡尔蔡司Smt有限责任公司 具有简化制造的光学成像布置
WO2015169329A1 (de) * 2014-05-05 2015-11-12 Carl Zeiss Industrielle Messtechnik Gmbh Koordinatenmessgeraet zum bestimmen von geometrischen eigenschaften eines messobjekts
WO2015173362A1 (de) * 2014-05-14 2015-11-19 Carl Zeiss Smt Gmbh Optimale anordnung von aktuier- und sensorpunkten auf einem optischen element
DE102014212104A1 (de) * 2014-06-24 2015-12-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und verfahren zur relativen positionierung einer multiaperturoptik mit mehreren optischen kanälen relativ zu einem bildsensor
DE102015211286A1 (de) 2015-06-18 2016-12-22 Carl Zeiss Smt Gmbh Abbildungssystem und verfahren
JP6830486B2 (ja) * 2015-12-03 2021-02-17 カール・ツァイス・エスエムティー・ゲーエムベーハー 能動的に調整可能なメトロロジー支持ユニットを備える光学結像装置
JP2019523437A (ja) * 2016-07-22 2019-08-22 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及びリソグラフィ投影装置
EP3563197B1 (en) * 2016-12-30 2024-01-31 ASML Netherlands B.V. Substrate exposure system
US10048599B2 (en) * 2016-12-30 2018-08-14 Mapper Lithography Ip B.V. Adjustment assembly and substrate exposure system comprising such an adjustment assembly
US10348306B2 (en) * 2017-03-09 2019-07-09 University Of Utah Research Foundation Resistive random access memory based multiplexers and field programmable gate arrays
CN109945777A (zh) * 2017-12-21 2019-06-28 北京矩阵空间科技有限公司 一种三维自动成像系统
DE102020206249A1 (de) * 2020-05-18 2021-11-18 Carl Zeiss Smt Gmbh Verfahren zur Instandhaltung einer Projektionsbelichtungsanlage, Servicemodul und Anordnung für die Halbleiterlithographie

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Also Published As

Publication number Publication date
WO2006128713A2 (en) 2006-12-07
CN101248392B (zh) 2012-12-19
US7817248B2 (en) 2010-10-19
KR101346957B1 (ko) 2014-01-02
JP5816152B2 (ja) 2015-11-18
EP2357529A2 (en) 2011-08-17
CN102929104B (zh) 2016-08-03
CN101248392A (zh) 2008-08-20
KR20080019047A (ko) 2008-02-29
US20080212083A1 (en) 2008-09-04
JP2008543070A (ja) 2008-11-27
JP2013051424A (ja) 2013-03-14
EP2357529A3 (en) 2015-09-02
CN102929104A (zh) 2013-02-13
WO2006128713A3 (en) 2007-05-31
EP1886191A2 (en) 2008-02-13
US8416392B2 (en) 2013-04-09
JP5237091B2 (ja) 2013-07-17
US20110001949A1 (en) 2011-01-06

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