KR20120137416A - 에러 정정을 갖는 복합 반도체 메모리 디바이스 - Google Patents

에러 정정을 갖는 복합 반도체 메모리 디바이스 Download PDF

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Publication number
KR20120137416A
KR20120137416A KR1020127027284A KR20127027284A KR20120137416A KR 20120137416 A KR20120137416 A KR 20120137416A KR 1020127027284 A KR1020127027284 A KR 1020127027284A KR 20127027284 A KR20127027284 A KR 20127027284A KR 20120137416 A KR20120137416 A KR 20120137416A
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KR
South Korea
Prior art keywords
memory devices
interface
data
nonvolatile memory
memory
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KR1020127027284A
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English (en)
Korean (ko)
Inventor
진기 김
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모사이드 테크놀로지스 인코퍼레이티드
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Publication of KR20120137416A publication Critical patent/KR20120137416A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1044—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M13/00—Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
    • H03M13/03—Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words
    • H03M13/05—Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words using block codes, i.e. a predetermined number of check bits joined to a predetermined number of information bits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M13/00—Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
    • H03M13/61—Aspects and characteristics of methods and arrangements for error correction or error detection, not provided for otherwise
    • H03M13/611—Specific encoding aspects, e.g. encoding by means of decoding
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Probability & Statistics with Applications (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR1020127027284A 2010-03-22 2011-03-02 에러 정정을 갖는 복합 반도체 메모리 디바이스 Withdrawn KR20120137416A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US31613810P 2010-03-22 2010-03-22
US61/316,138 2010-03-22
PCT/CA2011/000229 WO2011116454A1 (en) 2010-03-22 2011-03-02 Composite semiconductor memory device with error correction

Publications (1)

Publication Number Publication Date
KR20120137416A true KR20120137416A (ko) 2012-12-20

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Country Status (8)

Country Link
US (2) US9098430B2 (enExample)
EP (1) EP2550661A4 (enExample)
JP (1) JP2013522779A (enExample)
KR (1) KR20120137416A (enExample)
CN (1) CN102812519A (enExample)
CA (1) CA2791931A1 (enExample)
TW (1) TW201201008A (enExample)
WO (1) WO2011116454A1 (enExample)

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KR20180123207A (ko) * 2017-05-07 2018-11-15 에스케이하이닉스 주식회사 메모리 장치, 이를 포함하는 메모리 시스템 및 메모리 시스템의 동작 방법
KR20190005116A (ko) * 2017-07-05 2019-01-15 에스케이하이닉스 주식회사 메모리 장치, 이를 포함하는 메모리 시스템 및 메모리 시스템의 동작 방법
KR20220033975A (ko) * 2020-09-10 2022-03-17 웨스턴 디지털 테크놀로지스, 인코포레이티드 CbA 기술을 사용한 재배치 흐름

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TW201201008A (en) * 2010-03-22 2012-01-01 Mosaid Technologies Inc Composite semiconductor memory device with error correction
KR20130012737A (ko) * 2011-07-26 2013-02-05 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이를 포함하는 반도체 시스템
US8922243B2 (en) 2012-12-23 2014-12-30 Advanced Micro Devices, Inc. Die-stacked memory device with reconfigurable logic
US9697147B2 (en) 2012-08-06 2017-07-04 Advanced Micro Devices, Inc. Stacked memory device with metadata management
US8972826B2 (en) 2012-10-24 2015-03-03 Western Digital Technologies, Inc. Adaptive error correction codes for data storage systems
US9021339B2 (en) 2012-11-29 2015-04-28 Western Digital Technologies, Inc. Data reliability schemes for data storage systems
US9059736B2 (en) 2012-12-03 2015-06-16 Western Digital Technologies, Inc. Methods, solid state drive controllers and data storage devices having a runtime variable raid protection scheme
US9026888B2 (en) * 2012-12-21 2015-05-05 Intel Corporation Method, system and apparatus for providing access to error correction information
US9214963B1 (en) 2012-12-21 2015-12-15 Western Digital Technologies, Inc. Method and system for monitoring data channel to enable use of dynamically adjustable LDPC coding parameters in a data storage system
US9135185B2 (en) 2012-12-23 2015-09-15 Advanced Micro Devices, Inc. Die-stacked memory device providing data translation
US9201777B2 (en) 2012-12-23 2015-12-01 Advanced Micro Devices, Inc. Quality of service support using stacked memory device with logic die
US9065722B2 (en) 2012-12-23 2015-06-23 Advanced Micro Devices, Inc. Die-stacked device with partitioned multi-hop network
US9170948B2 (en) 2012-12-23 2015-10-27 Advanced Micro Devices, Inc. Cache coherency using die-stacked memory device with logic die
KR102084553B1 (ko) * 2013-01-03 2020-03-04 삼성전자주식회사 메모리 시스템
EP2992435B1 (en) 2013-04-30 2020-12-30 Hewlett-Packard Enterprise Development LP Memory node error correction
US20150012801A1 (en) * 2013-07-03 2015-01-08 Chih-Nan YEN Method of detecting and correcting errors with bch and ldpc engines for flash storage systems
US9286948B2 (en) 2013-07-15 2016-03-15 Advanced Micro Devices, Inc. Query operations for stacked-die memory device
CN104750569A (zh) 2013-12-30 2015-07-01 深圳市中兴微电子技术有限公司 一种实现数据纠错的方法及装置
JP6131207B2 (ja) 2014-03-14 2017-05-17 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
KR102221752B1 (ko) * 2014-03-20 2021-03-02 삼성전자주식회사 메모리 장치의 프로그램 방법 및 이를 포함하는 데이터 독출 방법
US20150311920A1 (en) * 2014-04-25 2015-10-29 Agency For Science, Technology And Research Decoder for a memory device, memory device and method of decoding a memory device
US10002043B2 (en) * 2014-08-19 2018-06-19 Samsung Electronics Co., Ltd. Memory devices and modules
KR102214556B1 (ko) * 2014-08-19 2021-02-09 삼성전자주식회사 메모리 장치 및 모듈
US10002044B2 (en) 2014-08-19 2018-06-19 Samsung Electronics Co., Ltd. Memory devices and modules
CN104217765B (zh) * 2014-09-09 2017-11-24 武汉新芯集成电路制造有限公司 闪存芯片操作时间的测量方法
KR102231441B1 (ko) * 2014-12-17 2021-03-25 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작 방법
US10209895B2 (en) 2016-02-18 2019-02-19 Toshiba Memory Corporation Memory system
CN106598499A (zh) * 2016-12-14 2017-04-26 深圳市中博睿存科技有限公司 一种基于fpga的分布式文件系统架构
US10545860B2 (en) * 2017-08-10 2020-01-28 Samsung Electronics Co., Ltd. Intelligent high bandwidth memory appliance
US10331345B2 (en) * 2017-09-29 2019-06-25 Intel Corporation Method and apparatus for reducing silent data errors in non-volatile memory systems
US10719394B2 (en) * 2017-10-25 2020-07-21 Innogrit Technologies Co., Ltd. Systems and methods for fast access of non-volatile storage devices
TWI680375B (zh) * 2018-08-23 2019-12-21 慧榮科技股份有限公司 具有分散式信箱架構的多處理器系統及其處理器錯誤檢查方法
KR102766573B1 (ko) * 2018-09-21 2025-02-12 삼성전자주식회사 복수의 에러 정정 기능을 갖는 메모리 장치 및 메모리 시스템과 그 동작 방법
US20200127685A1 (en) * 2018-10-19 2020-04-23 Nyquist Semiconductor Limited Systems and methods for a hybrid non-volatile storage system
JP7184632B2 (ja) * 2018-12-25 2022-12-06 ルネサスエレクトロニクス株式会社 半導体装置
US11210167B2 (en) * 2019-10-28 2021-12-28 Intel Corporation Memory wordline isolation for improvement in reliability, availability, and scalability (RAS)

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US7206891B2 (en) * 2002-09-26 2007-04-17 Lsi Logic Corporation Multi-port memory controller having independent ECC encoders
JP3757204B2 (ja) * 2002-12-06 2006-03-22 ファナック株式会社 エラー検出／訂正方式及び該方式を用いた制御装置
US7904786B2 (en) * 2003-03-06 2011-03-08 Hewlett-Packard Development Company, L.P. Assisted memory system
US8291295B2 (en) * 2005-09-26 2012-10-16 Sandisk Il Ltd. NAND flash memory controller exporting a NAND interface
KR100681429B1 (ko) * 2005-10-24 2007-02-15 삼성전자주식회사 반도체 메모리 장치 및 그것의 비트 에러 검출 방법
CN101324867B (zh) 2007-06-16 2011-07-20 深圳市硅格半导体有限公司 基于半导体存储介质的数据管理装置及管理方法
TWI357733B (en) * 2008-03-25 2012-02-01 Ralink Technology Corp Method for error-correcting code selection for mim
WO2010013437A1 (ja) * 2008-07-30 2010-02-04 パナソニック株式会社 誤り訂正機能付きコントローラ、誤り訂正機能付き記憶装置、及び誤り訂正機能付きシステム
US8134852B2 (en) * 2008-10-14 2012-03-13 Mosaid Technologies Incorporated Bridge device architecture for connecting discrete memory devices to a system
CN101527171B (zh) 2009-04-17 2012-05-23 成都市华为赛门铁克科技有限公司 一种多通道并行纠错的闪存控制方法和装置
TW201201008A (en) * 2010-03-22 2012-01-01 Mosaid Technologies Inc Composite semiconductor memory device with error correction

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180123207A (ko) * 2017-05-07 2018-11-15 에스케이하이닉스 주식회사 메모리 장치, 이를 포함하는 메모리 시스템 및 메모리 시스템의 동작 방법
KR20190005116A (ko) * 2017-07-05 2019-01-15 에스케이하이닉스 주식회사 메모리 장치, 이를 포함하는 메모리 시스템 및 메모리 시스템의 동작 방법
KR20220033975A (ko) * 2020-09-10 2022-03-17 웨스턴 디지털 테크놀로지스, 인코포레이티드 CbA 기술을 사용한 재배치 흐름
US11972151B2 (en) 2020-09-10 2024-04-30 Western Digital Technologies, Inc. Memory device using CbA technology

Also Published As

Publication number Publication date
EP2550661A4 (en) 2013-10-09
CA2791931A1 (en) 2011-09-29
CN102812519A (zh) 2012-12-05
US9411680B2 (en) 2016-08-09
US9098430B2 (en) 2015-08-04
JP2013522779A (ja) 2013-06-13
TW201201008A (en) 2012-01-01
WO2011116454A1 (en) 2011-09-29
US20150309867A1 (en) 2015-10-29
EP2550661A1 (en) 2013-01-30
US20110231739A1 (en) 2011-09-22

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