CN102812519A - 具有错误校正的复合半导体存储设备 - Google Patents

具有错误校正的复合半导体存储设备 Download PDF

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Publication number
CN102812519A
CN102812519A CN201180014974XA CN201180014974A CN102812519A CN 102812519 A CN102812519 A CN 102812519A CN 201180014974X A CN201180014974X A CN 201180014974XA CN 201180014974 A CN201180014974 A CN 201180014974A CN 102812519 A CN102812519 A CN 102812519A
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CN
China
Prior art keywords
memory device
volatile memory
composite semiconductor
data
semiconductor memory
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201180014974XA
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English (en)
Chinese (zh)
Inventor
金镇祺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
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Mosaid Technologies Inc
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Filing date
Publication date
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Publication of CN102812519A publication Critical patent/CN102812519A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1044—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M13/00—Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
    • H03M13/03—Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words
    • H03M13/05—Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words using block codes, i.e. a predetermined number of check bits joined to a predetermined number of information bits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M13/00—Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
    • H03M13/61—Aspects and characteristics of methods and arrangements for error correction or error detection, not provided for otherwise
    • H03M13/611—Specific encoding aspects, e.g. encoding by means of decoding
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Probability & Statistics with Applications (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
CN201180014974XA 2010-03-22 2011-03-02 具有错误校正的复合半导体存储设备 Pending CN102812519A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US31613810P 2010-03-22 2010-03-22
US61/316,138 2010-03-22
PCT/CA2011/000229 WO2011116454A1 (en) 2010-03-22 2011-03-02 Composite semiconductor memory device with error correction

Publications (1)

Publication Number Publication Date
CN102812519A true CN102812519A (zh) 2012-12-05

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CN201180014974XA Pending CN102812519A (zh) 2010-03-22 2011-03-02 具有错误校正的复合半导体存储设备

Country Status (8)

Country Link
US (2) US9098430B2 (enExample)
EP (1) EP2550661A4 (enExample)
JP (1) JP2013522779A (enExample)
KR (1) KR20120137416A (enExample)
CN (1) CN102812519A (enExample)
CA (1) CA2791931A1 (enExample)
TW (1) TW201201008A (enExample)
WO (1) WO2011116454A1 (enExample)

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CN104217765A (zh) * 2014-09-09 2014-12-17 武汉新芯集成电路制造有限公司 闪存芯片操作时间的测量方法
CN105378690A (zh) * 2013-04-30 2016-03-02 惠普发展公司，有限责任合伙企业 存储器节点差错校正
CN105719703A (zh) * 2014-12-17 2016-06-29 爱思开海力士有限公司 存储系统及其操作方法
CN106598499A (zh) * 2016-12-14 2017-04-26 深圳市中博睿存科技有限公司 一种基于fpga的分布式文件系统架构
US10141954B2 (en) 2013-12-30 2018-11-27 Sanechips Technology Co., Ltd. Data error correcting method and device, and computer storage medium
CN109582493A (zh) * 2017-09-29 2019-04-05 英特尔公司 用于减少非易失性存储器系统中的静默数据错误的方法和装置
CN110858128A (zh) * 2018-08-23 2020-03-03 慧荣科技股份有限公司 数据存储装置及其共享控制器中存储器的方法
CN110942799A (zh) * 2018-09-21 2020-03-31 三星电子株式会社 有多种纠错功能的存储器器件和存储器系统及其操作方法
CN111052088A (zh) * 2017-10-25 2020-04-21 英韧科技(上海)有限公司 快速访问非易失性存储器设备的系统和方法
CN111081308A (zh) * 2018-10-19 2020-04-28 奈奎斯特半导体有限公司 用于混合非易失性存储系统的系统和方法
CN111382000A (zh) * 2018-12-25 2020-07-07 瑞萨电子株式会社 半导体装置、存储器控制器与存储器访问方法

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KR20130012737A (ko) * 2011-07-26 2013-02-05 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이를 포함하는 반도체 시스템
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US9697147B2 (en) * 2012-08-06 2017-07-04 Advanced Micro Devices, Inc. Stacked memory device with metadata management
US8972826B2 (en) 2012-10-24 2015-03-03 Western Digital Technologies, Inc. Adaptive error correction codes for data storage systems
US9021339B2 (en) 2012-11-29 2015-04-28 Western Digital Technologies, Inc. Data reliability schemes for data storage systems
US9059736B2 (en) * 2012-12-03 2015-06-16 Western Digital Technologies, Inc. Methods, solid state drive controllers and data storage devices having a runtime variable raid protection scheme
US9026888B2 (en) * 2012-12-21 2015-05-05 Intel Corporation Method, system and apparatus for providing access to error correction information
US9214963B1 (en) 2012-12-21 2015-12-15 Western Digital Technologies, Inc. Method and system for monitoring data channel to enable use of dynamically adjustable LDPC coding parameters in a data storage system
US9065722B2 (en) 2012-12-23 2015-06-23 Advanced Micro Devices, Inc. Die-stacked device with partitioned multi-hop network
US9170948B2 (en) 2012-12-23 2015-10-27 Advanced Micro Devices, Inc. Cache coherency using die-stacked memory device with logic die
US9201777B2 (en) 2012-12-23 2015-12-01 Advanced Micro Devices, Inc. Quality of service support using stacked memory device with logic die
US9135185B2 (en) 2012-12-23 2015-09-15 Advanced Micro Devices, Inc. Die-stacked memory device providing data translation
KR102084553B1 (ko) * 2013-01-03 2020-03-04 삼성전자주식회사 메모리 시스템
US20150012801A1 (en) * 2013-07-03 2015-01-08 Chih-Nan YEN Method of detecting and correcting errors with bch and ldpc engines for flash storage systems
US9286948B2 (en) 2013-07-15 2016-03-15 Advanced Micro Devices, Inc. Query operations for stacked-die memory device
JP6131207B2 (ja) 2014-03-14 2017-05-17 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
KR102221752B1 (ko) * 2014-03-20 2021-03-02 삼성전자주식회사 메모리 장치의 프로그램 방법 및 이를 포함하는 데이터 독출 방법
US20150311920A1 (en) * 2014-04-25 2015-10-29 Agency For Science, Technology And Research Decoder for a memory device, memory device and method of decoding a memory device
US10002044B2 (en) 2014-08-19 2018-06-19 Samsung Electronics Co., Ltd. Memory devices and modules
US10002043B2 (en) * 2014-08-19 2018-06-19 Samsung Electronics Co., Ltd. Memory devices and modules
KR102214556B1 (ko) * 2014-08-19 2021-02-09 삼성전자주식회사 메모리 장치 및 모듈
US10209895B2 (en) 2016-02-18 2019-02-19 Toshiba Memory Corporation Memory system
KR102688433B1 (ko) * 2017-05-07 2024-07-26 에스케이하이닉스 주식회사 메모리 장치, 이를 포함하는 메모리 시스템 및 메모리 시스템의 동작 방법
KR102688423B1 (ko) * 2017-07-05 2024-07-26 에스케이하이닉스 주식회사 메모리 장치, 이를 포함하는 메모리 시스템 및 메모리 시스템의 동작 방법
US10545860B2 (en) * 2017-08-10 2020-01-28 Samsung Electronics Co., Ltd. Intelligent high bandwidth memory appliance
US11210167B2 (en) * 2019-10-28 2021-12-28 Intel Corporation Memory wordline isolation for improvement in reliability, availability, and scalability (RAS)
US11537326B2 (en) * 2020-09-10 2022-12-27 Western Digital Technologies, Inc. Relocation flow using CbA technology

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US20040181733A1 (en) * 2003-03-06 2004-09-16 Hilton Richard L. Assisted memory system
CN101324867A (zh) * 2007-06-16 2008-12-17 深圳市硅格半导体有限公司 基于半导体存储介质的数据管理装置及管理方法
CN101527171A (zh) * 2009-04-17 2009-09-09 成都市华为赛门铁克科技有限公司 一种多通道并行纠错的闪存控制方法和装置

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105378690A (zh) * 2013-04-30 2016-03-02 惠普发展公司，有限责任合伙企业 存储器节点差错校正
US9823986B2 (en) 2013-04-30 2017-11-21 Hewlett Packard Enterprise Development Lp Memory node error correction
CN105378690B (zh) * 2013-04-30 2019-02-26 慧与发展有限责任合伙企业 存储器节点差错校正
US10141954B2 (en) 2013-12-30 2018-11-27 Sanechips Technology Co., Ltd. Data error correcting method and device, and computer storage medium
CN104217765B (zh) * 2014-09-09 2017-11-24 武汉新芯集成电路制造有限公司 闪存芯片操作时间的测量方法
CN104217765A (zh) * 2014-09-09 2014-12-17 武汉新芯集成电路制造有限公司 闪存芯片操作时间的测量方法
CN105719703B (zh) * 2014-12-17 2020-10-20 爱思开海力士有限公司 存储系统及其操作方法
CN105719703A (zh) * 2014-12-17 2016-06-29 爱思开海力士有限公司 存储系统及其操作方法
CN106598499A (zh) * 2016-12-14 2017-04-26 深圳市中博睿存科技有限公司 一种基于fpga的分布式文件系统架构
CN109582493A (zh) * 2017-09-29 2019-04-05 英特尔公司 用于减少非易失性存储器系统中的静默数据错误的方法和装置
CN111052088A (zh) * 2017-10-25 2020-04-21 英韧科技(上海)有限公司 快速访问非易失性存储器设备的系统和方法
CN111052088B (zh) * 2017-10-25 2024-03-08 英韧科技股份有限公司 快速访问非易失性存储器设备的系统和方法
CN110858128A (zh) * 2018-08-23 2020-03-03 慧荣科技股份有限公司 数据存储装置及其共享控制器中存储器的方法
CN110858128B (zh) * 2018-08-23 2023-04-18 慧荣科技股份有限公司 数据存储装置及其共享控制器中存储器的方法
CN110942799A (zh) * 2018-09-21 2020-03-31 三星电子株式会社 有多种纠错功能的存储器器件和存储器系统及其操作方法
CN111081308A (zh) * 2018-10-19 2020-04-28 奈奎斯特半导体有限公司 用于混合非易失性存储系统的系统和方法
CN111081308B (zh) * 2018-10-19 2023-08-15 英韧科技(上海)有限公司 用于混合非易失性存储系统的系统和方法
CN111382000A (zh) * 2018-12-25 2020-07-07 瑞萨电子株式会社 半导体装置、存储器控制器与存储器访问方法
CN111382000B (zh) * 2018-12-25 2024-01-12 瑞萨电子株式会社 半导体装置、存储器控制器与存储器访问方法

Also Published As

Publication number Publication date
CA2791931A1 (en) 2011-09-29
US9098430B2 (en) 2015-08-04
EP2550661A4 (en) 2013-10-09
TW201201008A (en) 2012-01-01
JP2013522779A (ja) 2013-06-13
KR20120137416A (ko) 2012-12-20
US20110231739A1 (en) 2011-09-22
US20150309867A1 (en) 2015-10-29
EP2550661A1 (en) 2013-01-30
US9411680B2 (en) 2016-08-09
WO2011116454A1 (en) 2011-09-29

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Application publication date: 20121205