JP2013522779A5 - - Google Patents

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Publication number
JP2013522779A5
JP2013522779A5 JP2013500288A JP2013500288A JP2013522779A5 JP 2013522779 A5 JP2013522779 A5 JP 2013522779A5 JP 2013500288 A JP2013500288 A JP 2013500288A JP 2013500288 A JP2013500288 A JP 2013500288A JP 2013522779 A5 JP2013522779 A5 JP 2013522779A5
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JP
Japan
Prior art keywords
memory device
composite semiconductor
semiconductor memory
interface
ecc engine
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Pending
Application number
JP2013500288A
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English (en)
Japanese (ja)
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JP2013522779A (ja
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Publication date
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Priority claimed from PCT/CA2011/000229 external-priority patent/WO2011116454A1/en
Publication of JP2013522779A publication Critical patent/JP2013522779A/ja
Publication of JP2013522779A5 publication Critical patent/JP2013522779A5/ja
Pending legal-status Critical Current

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JP2013500288A 2010-03-22 2011-03-02 誤り訂正を有する複合半導体メモリデバイス Pending JP2013522779A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US31613810P 2010-03-22 2010-03-22
US61/316,138 2010-03-22
PCT/CA2011/000229 WO2011116454A1 (en) 2010-03-22 2011-03-02 Composite semiconductor memory device with error correction

Publications (2)

Publication Number Publication Date
JP2013522779A JP2013522779A (ja) 2013-06-13
JP2013522779A5 true JP2013522779A5 (enExample) 2014-03-27

Family

ID=44648192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013500288A Pending JP2013522779A (ja) 2010-03-22 2011-03-02 誤り訂正を有する複合半導体メモリデバイス

Country Status (8)

Country Link
US (2) US9098430B2 (enExample)
EP (1) EP2550661A4 (enExample)
JP (1) JP2013522779A (enExample)
KR (1) KR20120137416A (enExample)
CN (1) CN102812519A (enExample)
CA (1) CA2791931A1 (enExample)
TW (1) TW201201008A (enExample)
WO (1) WO2011116454A1 (enExample)

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KR102231441B1 (ko) * 2014-12-17 2021-03-25 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작 방법
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CN106598499A (zh) * 2016-12-14 2017-04-26 深圳市中博睿存科技有限公司 一种基于fpga的分布式文件系统架构
KR102688433B1 (ko) * 2017-05-07 2024-07-26 에스케이하이닉스 주식회사 메모리 장치, 이를 포함하는 메모리 시스템 및 메모리 시스템의 동작 방법
KR102688423B1 (ko) * 2017-07-05 2024-07-26 에스케이하이닉스 주식회사 메모리 장치, 이를 포함하는 메모리 시스템 및 메모리 시스템의 동작 방법
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JP7184632B2 (ja) * 2018-12-25 2022-12-06 ルネサスエレクトロニクス株式会社 半導体装置
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