KR20120078385A - Light emitting diode having reflective body of substrate and its light emitting diode package - Google Patents

Abstract

PURPOSE: A light emitting diode including a substrate reflector and a light emitting diode package are provided to improve light reflection efficiency by installing a substrate reflector on the back side of a substrate. CONSTITUTION: A light emitting structure(10) is laminated on a substrate(1). The light emitting structure includes a first conductive semiconductor layer(11), an active layer(13) and a second conductive semiconductor layer(12). A first electrode(21) is electrically connected to the first conductive semiconductor layer. A second electrode(22) is electrically connected to the second conductive semiconductor layer. A reflector(30) is formed on the back side of the substrate.

Description

Light Emitting Diode having reflective body of substrate and its Light Emitting Diode package

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode having a substrate reflector, and more particularly, to a light emitting diode having a substrate reflector for providing a substrate reflector on a rear surface of the substrate to improve light reflection efficiency and to facilitate cooling of the substrate. It is about.

Since the light emitting diode has a higher refractive index than air, much of the light generated by the recombination of electrons and holes remains in the device. These photons pass through various paths such as a thin film, a substrate, and an electrode before escaping to the outside, and the external quantum efficiency is reduced by absorption. Various studies for increasing the external quantum efficiency are continuing.

In particular, there has been a problem in that conventionally, light is leaked to the rear surface of the substrate or light is absorbed by a lead frame installed on the rear surface of the substrate to reduce the light reflection efficiency, and there is no method of separately cooling the substrate heated at high heat during light emission. .

The technical problem to be achieved by the present invention is to provide a substrate reflector capable of reflecting light laterally or upwardly on a rear surface of the substrate to cool the substrate, as well as to improve the light extraction efficiency and durability by cooling the substrate. It is to provide a light emitting diode having a reflector.

A light emitting diode having a substrate reflector according to the present invention for achieving the above technical problem, the substrate; A light emitting structure stacked on an upper surface of the substrate and sequentially stacked with a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; A first electrode electrically connected to the first conductive semiconductor layer; A second electrode electrically connected to the second conductivity type semiconductor layer; And a reflector formed on a rear surface of the substrate.

In some embodiments of the present disclosure, the reflector according to the spirit of the present invention may be a photometric induction reflector having a reflecting surface formed to laterally reflect light generated in the active layer.

In addition, the photometric induction reflector according to the spirit of the present invention may be a polygonal reflector having a polygonal inclined surface or a domed reflector having a rounded inclined surface.

In addition, the reflector according to the spirit of the present invention may be a top-emitting induction reflector in which a reflecting surface is formed to reflect upwardly the light generated in the active layer.

In addition, the upward-radiation inducing reflector according to the spirit of the present invention may be a sawtooth uneven reflector on which a tooth uneven slope is formed, or a round uneven reflector on which a round uneven slope is formed.

In addition, in the upper-radiation induction reflector according to the spirit of the present invention, the arrangement density of the irregularities may be high in the middle portion, the edge portion may be low, and the heights of the irregularities and the neighboring irregularities may be different.

In addition, the upward-radiation inducing reflector according to the spirit of the present invention may be a complex uneven reflector including a first unevenness etched in the first direction and a second unevenness etched in the second direction.

In addition, the reflector according to the spirit of the present invention may include a; reflector is spaced apart from the substrate so as to form an air gap between the substrate.

In addition, the air gap according to the spirit of the present invention may be made by etching the substrate.

In addition, a filler may be formed between the reflective plate and the substrate according to the spirit of the present invention.

The light emitting diode having the substrate reflector of the present invention has the effect of improving the light reflection efficiency and improving the light extraction efficiency and durability.

1 is a cross-sectional view illustrating a light emitting diode having a substrate reflector according to an embodiment of the present invention.
2 is a cross-sectional view illustrating a light emitting diode having a substrate reflector according to another embodiment of the present invention.
3 is a cross-sectional view illustrating a light emitting diode having a substrate reflector according to still another embodiment of the present invention.
4 is a cross-sectional view illustrating a light emitting diode having a substrate reflector according to still another embodiment of the present invention.
5 is a cross-sectional view illustrating a light emitting diode having a substrate reflector according to still another embodiment of the present invention.
6 is a cross-sectional view illustrating a light emitting diode having a substrate reflector according to still another embodiment of the present invention.
7 and 8 are wafer state diagrams illustrating the method of forming the unevenness of FIG. 6.
9 is a cross-sectional view illustrating a light emitting diode having a substrate reflector according to still another embodiment of the present invention.
10 is a cross-sectional view illustrating a light emitting diode having a substrate reflector according to another embodiment of the present invention.
FIG. 11 is a partially enlarged view illustrating a case in which light within a critical region is radiated from the substrate and the air gap interface of FIG. 9.
FIG. 12 is a partially enlarged view illustrating a case where light other than the critical region is irradiated from the substrate and the air gap boundary surface of FIG. 9.
13 is a cross-sectional view illustrating a light emitting diode package having a substrate reflector according to an embodiment of the present invention.

Hereinafter, various exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, It is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In addition, the thickness or size of each layer in the drawings is exaggerated for convenience and clarity of description. Like numbers refer to like elements herein. Throughout the specification, when referring to one component, such as a layer, region, or substrate, being located on, “connected”, or “under” another component, the one component is directly in another configuration. It may be interpreted that there may be other components in contact with or interposed between, or “on,” “connected”, or “under” an element. On the other hand, when one component is referred to as being located on another component "directly on", "directly connected", or "directly under", it is interpreted that there are no other components intervening therebetween. do. The progress of light in the figure is shown by dashed arrows.

1 is a cross-sectional view showing a light emitting diode having a substrate reflector according to an embodiment of the present invention, Figure 2 is a cross-sectional view showing a light emitting diode having a substrate reflector according to another embodiment of the present invention.

1 and 2, a light emitting diode having a substrate reflector according to an embodiment of the present invention includes a substrate 1, a light emitting structure 10, a first electrode 21, and a second electrode ( 22) and the transparent electrode layer 14 and the reflector 30 are comprised.

The light emitting structure 10 is formed by stacking a first conductive semiconductor layer 11, an active layer 13, and a second conductive semiconductor layer 12, and the light emitting structure 10 includes a substrate 1. The conductive semiconductor layer may be formed on any one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure based on the substrate 1. Hereinafter, a case in which the light emitting structure 10 is an n-p junction structure will be described as an example.

The light emitting structure 10 includes a second conductive semiconductor layer 12, an active layer 13, and a first conductive semiconductor layer 11 that are sequentially stacked. The light emitting structure 10 may be, for example, electron beam evaporation, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD) , Plasma laser deposition (PLD), dual-type thermal evaporator, sputtering, metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), or the like.

When a voltage is applied to the light emitting structure 10 in the forward direction, electrons in the conduction band of the active layer 13 and holes in the valence band transition and recombine, and energy corresponding to the energy gap is emitted as light. The wavelength of the emitted light is determined by the kind of material constituting the active layer 13. In addition, the first conductivity type semiconductor layer 11 and the second conductivity type semiconductor layer 12 perform a function of providing electrons or holes to the active layer 13 according to the applied voltage. The first conductivity type semiconductor layer 11 and the second conductivity type semiconductor layer 12 may include impurities to have different conductivity types. For example, the first conductivity type semiconductor layer 11 may include p-type impurities, and the second conductivity type semiconductor layer 12 may include n-type impurities. In this case, the first conductivity type semiconductor layer 11 may provide holes, and the second conductivity type semiconductor layer 12 may provide electrons. On the contrary, the technical concept of the present invention also includes the case where the first conductivity-type semiconductor layer 11 is n-type and the second conductivity-type semiconductor layer 12 is p-type. Each of the first conductive semiconductor layer 11 and the second conductive semiconductor layer 12 may include a group III-V compound material, and may include, for example, a gallium nitride-based material.

The second conductivity-type semiconductor layer 12 may be implemented as an n-type semiconductor layer doped with an n-type dopant, for example, n-type AlxInyGazN (0 ≦ x, y, z ≦ 1, x + y + z = 1). For example, the second conductivity-type semiconductor layer 12 may include p-type GaN. The n-type dopant may be at least one of silicon (Si), germanium (Ge), tin (Sn), selenium (Se), and tellurium (Te).

The first conductivity-type semiconductor layer 11 may be implemented as a p-type semiconductor layer doped with a p-type dopant, for example, p-type AlxInyGazN (0 ≦ x, y, z ≦ 1, x + y + z = 1). For example, the first conductivity type semiconductor layer 11 may include p-type GaN. The n-type dopant may be at least one of magnesium (Mg), zinc (Zn), calcium (Ca), strontium (Sr), beryllium (Be), and barium (Ba). Although not shown, the first conductivity type semiconductor layer 11 may have a concave-convex pattern (not shown) formed on the upper surface of the first conductive semiconductor layer 11 so as to be refracted and emitted to the outside.

Since the active layer 13 has a lower energy band gap than the first conductive semiconductor layer 11 and the second conductive semiconductor layer 12, light emission may be activated. The active layer 13 may emit light of various wavelengths, and may emit infrared light, visible light, or ultraviolet light, for example. The active layer 13 may comprise a Group III-V compound material, for example AlxInyGazN (0 ≦ x, y, z ≦ 1, x + y + z = 1), for example It may include InGaN or AlGaN. In addition, the active layer 13 may include a single quantum well (SQW) or a multi quantum well (MQW). The active layer 13 may have a stacked structure of a quantum well layer and a quantum barrier layer, and the number of the quantum well layer and the quantum barrier layer may be variously changed according to design needs. In addition, the active layer 13 may include, for example, a GaN / InGaN / GaN MQW structure or a GaN / AlGaN / GaN MQW structure. However, this is exemplary, and the active layer 13 has a wavelength of light emitted according to a constituent material, for example, when the amount of indium is about 22%, it may emit blue light, and about 40% It can emit green light. The present invention is not limited to the constituent materials of the active layer 13.

The light emitting structure 10 may have an active layer 13 and a mesa region from which a portion of the first conductivity-type semiconductor layer 11 is removed, and a portion of the second conductivity-type semiconductor layer 12. Can be removed. The active layer 13 may be limited to the mesa region to emit light. As the mesa region is formed, some regions of the second conductivity-type semiconductor layer 12 may be exposed. The mesa region may be formed using inductively coupled plasma reactive ion etching (ICP-RIE), wet etching, or dry etching.

The light emitting structure 10 is stacked on the substrate 1. The substrate 1 may include sapphire (Al 2 O 3), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), silicon (Si), germanium (Ge), zinc oxide (ZnO), magnesium oxide (MgO). ), Aluminum nitride (AlN), borate nitride (BN), gallium phosphide (GaP), indium phosphide (InP), lithium-aluminum oxide (LiAl2O3) may be included. Although not shown, an uneven pattern (not shown) may be formed on the top and / or bottom surface of the substrate 1, and the uneven pattern may have a stripe shape, a lens shape, a pillar shape, a horn shape, or the like. It may have various shapes.

In addition, a buffer layer (not shown) may be positioned on one side of the substrate 1 to mitigate lattice mismatch between the substrate 1 and the light emitting structure 10. The buffer layer may be formed of a single layer or multiple layers, and may include, for example, at least one of GaN, InN, AlN, InGaN, AlGaN, AlGaInN, and AlInN. Although not shown, an undoped semiconductor layer (not shown) may be disposed on the substrate 1 or the buffer layer, and the undoped semiconductor layer may include GaN.

Meanwhile, the first electrode 21 is electrically connected to the first conductive semiconductor layer 11, and the second electrode 22 is electrically connected to the second conductive semiconductor layer 12. Will be.

Here, the second electrode 22 may be located on the second conductive semiconductor layer 12 exposed from the mesa region. The second electrode 22 may include a material forming an ohmic contact with the second conductive semiconductor layer 12. For example, gold (Au), silver (Ag), aluminum (Al), and palladium (Pd) may be used. ), Titanium (Ti), chromium (Cr), nickel (Ni), tin (Sn), chromium (Cr), platinum (Pt), tungsten (W), cobalt (Co), iridium (Ir), rhodium (Rh) ), Ruthenium (Ru), zinc (Zn), magnesium (Mg) or alloys thereof, and may include, for example, carbon nanotubes. The second electrode 22 may be composed of a single layer or multiple layers, for example, may be composed of multiple layers such as Ti / Al, Cr / Au, Ti / Au, Au / Sn. Bonding wires may be connected to the second electrode 21 in a packaging process.

In addition, the first electrode 21 may be positioned on the transparent electrode layer 14. The first electrode 21 and the second electrode 22 may be positioned to face each other. The first electrode 21 may include a material forming an ohmic contact with the transparent electrode layer 14. For example, gold (Au), silver (Ag), palladium (Pd), titanium (Ti), nickel ( Ni), tin (Sn), chromium (Cr), platinum (Pt), tungsten (W), cobalt (Co), iridium (Ir), rhodium (Rh), ruthenium (Ru), zinc (Zn), magnesium ( Mg) or an alloy thereof, and may include, for example, carbon nanotubes. The first electrode 21 may be composed of a single layer or multiple layers, for example, may be composed of multiple layers such as Ni / Au, Pd / Au, and Pd / Ni. Bonding wires may be connected to the first electrode 21 in the packaging process.

The first electrode 21 and the second electrode 22 may be formed using thermal evaporation, e-beam evaporation, sputtering, or chemical vapor deposition. This is not limited to this. In addition, the first electrode 21 and the second electrode 22 may be formed using various methods such as a lift-off and a plating method. In addition, the first electrode 21 and the second electrode 22 may be heat treated to improve ohmic contact.

The first electrode 21 may further include an electrode finger F extending toward the second electrode 22. The finger F may distribute the current more evenly to the transparent electrode layer 14. The finger F may be formed of the same material as the first electrode 21 and may be simultaneously formed with the first electrode 21.

A lower side of the first electrode 21 may further include a reflective electrode layer (not shown). The reflective electrode layer may reflect light to prevent the first electrode 21 from absorbing light. The reflective electrode layer may include aluminum (Al), silver (Ag), alloys thereof, silver (Ag) oxides (Ag-O), or APC alloys (alloys including Ag, Pd, and Cu). In addition, the reflective electrode layer may further include at least one of rhodium (Rh), copper (Cu), palladium (Pd), nickel (Ni), ruthenium (Ru), iridium (Ir), and platinum (Pt). In addition, the reflective electrode layer may be formed of a material for increasing ohmic contact between the transparent electrode layer 14 and the first electrode 21. Although not shown, the reflective electrode layer may be formed below the second electrode 22.

Meanwhile, the transparent electrode layer 14 is positioned on the first conductivity type semiconductor layer 11, and uniformly disperses the current injected from the first electrode 21 with respect to the first conductivity type semiconductor layer 11. Function can be performed. The transparent electrode layer 14 may have a thin film form without a pattern as a whole or may have a predetermined pattern form. The transparent electrode layer 14 may be formed in a pattern of a mesh structure for adhesion to the first conductivity type semiconductor layer 11. The transparent electrode layer 14 may include a transparent and conductive material. The transparent electrode layer 14 may include a metal, and may be, for example, a composite layer of nickel (Ni) and gold (Au). In addition, the transparent electrode layer 14 may include an oxide, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO), or indium (AZO) aluminum zinc oxide (GZO), gallium zinc oxide (GZO), indium gallium oxide (IGO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum tin oxide (ATO), indium tungsten oxide (IGWO), CIO (cupper indium oxide), MIO (magnesium indium oxide), MgO, ZnO, In2O3, TiTaO2, TiNbO2, TiOx, RuOx, and may include at least one of IrOx. The transparent electrode layer 14 may be formed using, for example, evaporation or sputtering, but the present invention is not limited thereto. In addition, an uneven pattern (not shown) may be formed on the upper surface of the transparent electrode layer 14 so as to refract light to be emitted to the outside.

On the other hand, the reflector 30, which is formed on the back of the substrate 1, is a photometric induction reflector 31, the reflecting surface is formed to reflect the light generated from the active layer 13 in the lateral direction It is possible.

Here, as shown in FIG. 1, the photometric inductive reflector 31 may be a polygonal reflector 311 in which a polygonal inclined surface 311a is formed.

2, the photometric induction reflector 31 may be a domed reflector 312 in which a rounded inclined surface 312a is formed.

Therefore, as shown in FIGS. 1 and 2, the light generated in the active layer 13 by the photometric inductive reflector 31 may be guided to the side of the chip and extracted to the outside. Rather, it is possible to actively use or install a separate reflection shade when not assembling the package, it is possible to utilize.

3 to 6 are cross-sectional views illustrating light emitting diodes having a substrate reflector according to still other embodiments of the present invention.

As shown in FIGS. 3 to 6, the reflector 40 may be an upward-light guided reflector 41 having a reflecting surface to reflect light generated from the active layer 13 upward. .

Here, referring to FIG. 3, the upward-radiation inductive reflector 41 may be a sawtooth uneven reflector 411 on which a tooth uneven inclined surface 411a is formed.

Therefore, as shown in FIG. 3, the light generated in the active layer 13 is reflected twice by the upper induction reflector 41 and is extracted to the outside by being directed upward of the chip.

In addition, referring to FIG. 4, the upper light-emitting induction reflector 41 may be a round uneven reflector 412 on which a round uneven inclined surface 412a is formed.

Therefore, as shown in FIG. 4, the light generated in the active layer 13 is reflected by the upward-light guided reflector 41 a plurality of times, for example, reflected three or more times to be guided upward of the chip. It can be extracted to the outside.

In addition, as shown in FIG. 5, in the upper light-emitting induction reflector 41, the arrangement density of the unevenness 410 may be high in the center portion and low in the edge portion.

Therefore, the placement density of the unevenness 410 is increased in the center portion of the chip that is likely to be incident directly downward to actively induce upward light, and the edge of the chip that is likely to be incident sideways induces total reflection to the upper side. Can reflect light.

In addition, as illustrated in FIG. 6, the upper emission guide reflector 41 may have different heights H1 and H2 of the unevenness 420 and the neighboring unevenness 430.

7 and 8 are wafer state diagrams illustrating the method of forming the unevenness of FIG. 6.

As shown in FIG. 7, the upward-radiation inducing reflector 41 includes a first unevenness 440 etched in a first direction and a second unevenness 450 etched in a second direction as illustrated in FIG. 8. It is possible that it is a composite concave-convex reflector 460 including a).

9 is a cross-sectional view showing a light emitting diode having a substrate reflector according to still another embodiment of the present invention, and FIG. 10 is a cross-sectional view showing a light emitting diode having a substrate reflector according to another embodiment of the present invention.

As shown in FIGS. 9 and 10, the reflector 50 may include a reflector 51 spaced apart from the substrate 1 such that an air gap G is formed between the substrate 1. It can be made, including.

In addition, as shown in FIG. 9, the air gap G may be formed by etching the substrate 1, and as shown in FIG. 10, between the reflecting plate 51 and the substrate 1. It is also possible to form the filler A.

Therefore, as shown in FIG. 11, when light passing through the substrate 1 is incident on the interface 1a between the substrate 1 and the air gap G at an angle within the critical angle range H, The light is refracted, passes through the air gap G, is reflected by the reflector 51, and then proceeds back into the substrate 1. At this time, the amount of light absorbed by the reflector 51 is the same as the case of the metal reflector without the air gap (G).

On the other hand, as shown in FIG. 12, when light passing through the substrate 1 is incident on the interface 1a between the substrate 1 and the air gap G at an angle other than the critical angle range H, Light is not refracted, but totally reflected and propagates into the substrate 1. At this time, since the totally reflected light is totally reflected close to 100% without being absorbed by the reflector 51, the reflectance of the light may be further improved when there is an air gap G.

On the other hand, the reflector 50 is a dielectric having excellent reflectivity, silver (Ag), platinum (Pt), aluminum (Al), alloys thereof, silver (Ag) -based oxides (Ag-O), APC alloys (Ag, Pd , Alloy containing Cu), tin (Sn), tungsten (W), cobalt (Co), magnesium (Mg), zinc (Zn), chromium (Cr), silicon, rhodium (Rh), palladium (Pd), It may include any one or more of nickel (Ni), ruthenium (Ru), iridium (Ir), titanium (Ti), distributed Bragg reflector (DBR), transparent electrode powder, sapphire powder and combinations thereof. have.

In the above-described embodiments, the case where the light emitting diode has a lateral shape has been described, but this is exemplary. Those skilled in the art may understand that the light emitting diode according to the spirit of the present invention may have a flip-chip type, a vertical type, or various shapes.

13 is a cross-sectional view illustrating a light emitting diode package 1000 having a substrate reflector according to an embodiment of the present invention.

As shown in FIG. 13, the light emitting diode package 1000 according to the exemplary embodiment of the present invention may include the above-described light emitting diode 100, the first electrode 21, and / or the second electrode 22. And a lead frame 300 connected to the wire 200 and a transparent protective layer 400 covering and protecting the light emitting diodes 100 and the lead frame 300.

Therefore, when a current is provided through the lead frame 300, light is emitted from the light emitting structure of the light emitting diode 100, and then emitted through the transparent protective layer 400. Such a light emitting diode package 1000 is exemplary, and the present invention is not limited thereto.

1: substrate 10: light emitting structure
11: first conductivity type semiconductor layer 12: second conductivity type semiconductor layer
13: active layer 14: transparent electrode layer
21: first electrode 22: second electrode
30, 40: Reflector F: Finger
31: metering induction reflector 311a: polygon inclined plane
311: polygonal reflector 312a: round slope
312: dome-shaped reflector 41: top-emitting induction reflector
411a: Tooth uneven inclined surface 411: Tooth uneven reflector
412a: round uneven slope 412: round uneven reflector
410, 420, 430: Unevenness H1, H2: Height
440: first unevenness 450: second unevenness
460: compound uneven reflector G: air gap
51: reflector A: filler
1a: interface H: critical angle range

Claims (15)

Board;
A light emitting structure stacked on an upper surface of the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
A first electrode electrically connected to the first conductive semiconductor layer;
A second electrode electrically connected to the second conductivity type semiconductor layer; And
A reflector formed on a rear surface of the substrate;
Light emitting diode having a substrate reflector, characterized in that comprises a. The method of claim 1,
The reflector is a light emitting diode having a substrate reflector, characterized in that the photometric induction reflector is formed to reflect the light generated in the active layer in the lateral direction. The method of claim 2,
The light-emitting diode having a substrate reflector, wherein the photometric inductive reflector is a polygonal reflector on which a polygonal inclined surface is formed. The method of claim 2,
The photometric inductive reflector is a light emitting diode having a substrate reflector, characterized in that a domed reflector in which a rounded inclined surface is formed. The method of claim 1,
The reflector is a light emitting diode having a substrate reflector, characterized in that the upper surface induction reflector is formed to reflect the light generated in the active layer upward. The method of claim 5, wherein
The upper emission guide reflector is a light emitting diode having a substrate reflector, characterized in that the tooth irregularities reflector is formed with a tooth uneven inclined surface. The method of claim 5, wherein
The upper emission guide reflector is a light emitting diode having a substrate reflector, wherein the round uneven reflector is formed with a round uneven slope. The method of claim 5, wherein
The upper emission guide reflector has a substrate reflector, characterized in that the arrangement density of the unevenness is high in the center portion and low in the edge portion. The method of claim 5, wherein
The upper emission guide reflector is a light emitting diode having a substrate reflector, characterized in that the height of the irregularities and the neighboring irregularities are different. The method of claim 9,
The upper emission guide reflector is a light emitting diode having a substrate reflector, characterized in that it is a complex uneven reflector including first unevenness etched in a first direction and second unevenness etched in a second direction. The method of claim 1,
And the reflector comprises a reflector disposed to be spaced apart from the substrate such that an air gap is formed between the substrate and the substrate. The method of claim 1,
The reflector includes a dielectric having excellent reflectance, silver (Ag), platinum (Pt), aluminum (Al), alloys thereof, silver (Ag) oxides (Ag-O), and APC alloys (Ag, Pd, Cu). Alloy), tin (Sn), tungsten (W), cobalt (Co), magnesium (Mg), zinc (Zn), chromium (Cr), silicon, rhodium (Rh), palladium (Pd), nickel (Ni), Substrate reflector comprising at least one of ruthenium (Ru), iridium (Ir), titanium (Ti), distributed Bragg reflector (DBR), transparent electrode powder, sapphire powder and combinations thereof Light emitting diode having a. The method of claim 11,
The air gap is a light emitting diode having a substrate reflector, characterized in that for etching the substrate. The method of claim 11,
A light emitting diode having a substrate reflector, wherein a filler is formed between the reflecting plate and the substrate. Board; A light emitting structure stacked on an upper surface of the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; A first electrode electrically connected to the first conductive semiconductor layer; A second electrode electrically connected to the second conductivity type semiconductor layer; And a reflector formed on a rear surface of the substrate;
A lead frame connected to the first electrode, the second electrode, or both by wire; And
A transparent protective layer covering and protecting the light emitting diode and the lead frame;
Light emitting diode package having a current blocking layer comprising a.

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