KR102042171B1 - Light emitting device and light emitting device package - Google Patents
Light emitting device and light emitting device package Download PDFInfo
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- KR102042171B1 KR102042171B1 KR1020120113945A KR20120113945A KR102042171B1 KR 102042171 B1 KR102042171 B1 KR 102042171B1 KR 1020120113945 A KR1020120113945 A KR 1020120113945A KR 20120113945 A KR20120113945 A KR 20120113945A KR 102042171 B1 KR102042171 B1 KR 102042171B1
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- Prior art keywords
- layer
- light emitting
- semiconductor layer
- current blocking
- conductive semiconductor
- Prior art date
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The light emitting device is disposed on a light emitting structure including at least a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, an electrode layer disposed below the first conductive semiconductor layer, and a second conductive semiconductor layer. And a plurality of nanoparticles disposed between the electrode layer and the first conductive semiconductor layer and vertically overlapping the electrode, and between the current blocking layer and the first conductive semiconductor layer.
Description
An embodiment relates to a light emitting device.
Light-emitting diodes (LEDs) are semiconductor light emitting devices that convert current into light.
The light emitting device can obtain light having high luminance, and is widely used as a light source for a display, a light source for an automobile, and a light source for an illumination.
The embodiment provides a light emitting device capable of improving light efficiency.
The embodiment provides a light emitting device capable of improving light extraction efficiency.
The embodiment provides a light emitting device package employing the light emitting device.
According to an embodiment, the light emitting device includes: a light emitting structure including at least a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; An electrode layer disposed below the first conductivity type semiconductor layer; An electrode disposed on the second conductive semiconductor layer; A current blocking layer disposed between the electrode layer and the first conductive semiconductor layer and vertically overlapping the electrode; And a plurality of nanoparticles disposed between the current blocking layer and the first conductive semiconductor layer.
According to an embodiment, the light emitting device includes: a light emitting structure including at least a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; An electrode layer disposed below the first conductivity type semiconductor layer; An electrode disposed on the second conductive semiconductor layer; A current blocking layer disposed between the electrode layer and the second conductive semiconductor layer and penetrating the first conductive semiconductor layer and the active layer and vertically overlapping the electrode; And a plurality of nanoparticles disposed between the current blocking layer and the second conductive semiconductor layer.
According to an embodiment, the light emitting device package, the body; A lead electrode installed on the body; A light emitting element disposed on any one of the body and the lead electrode; And a molding member surrounding the light emitting element.
The embodiment forms nanoparticles in the vicinity of the active layer corresponding to the current blocking layer, thereby promoting light generation of the active layer corresponding to the current blocking layer by surface plasmons generated by the nanoparticles, thereby improving light efficiency. .
The embodiment may improve the light efficiency by adjusting the thickness of the current blocking layer to generate current in the active layer corresponding to the current blocking layer by allowing current to flow through the nanoparticles.
The embodiment can improve the light efficiency by widening the light generating area by supplying a current through the protective layer as well.
The embodiment can improve the light extraction efficiency by forming the light extraction structure.
The embodiment can improve light extraction efficiency by forming an inclined reflective layer around the side of the current blocking layer.
1 is a cross-sectional view showing a light emitting device according to the first embodiment.
2 is a plan view showing a light emitting device according to the first embodiment.
3 is a view showing a state in which light is generated by the surface plasmon in the light emitting device according to the first embodiment.
4 is a diagram illustrating the flow of current in the light emitting device according to the first embodiment.
5 to 12 illustrate a process for manufacturing the light emitting device according to the first embodiment.
13 is a sectional view showing a light emitting device according to the second embodiment.
14 is a sectional view showing a light emitting device according to the third embodiment.
15 is a cross-sectional view illustrating a light emitting device according to a fourth embodiment.
16 is a cross-sectional view illustrating a light emitting device package according to an embodiment.
In the description of the embodiment according to the invention, in the case where it is described as being formed on the "top" or "bottom" of each component, the top (bottom) or the bottom (bottom) is the two components are mutually It includes both direct contact or one or more other components disposed between and formed between the two components. In addition, when expressed as "up (up) or down (down)" may include the meaning of the down direction as well as the up direction based on one component.
1 is a cross-sectional view showing a light emitting device according to the first embodiment, Figure 2 is a plan view showing a light emitting device according to the first embodiment.
1 and 2, the
In addition, the
The
Therefore, the
The
As the metal material, for example, titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), copper (Cu), copper At least one selected from the group consisting of an alloy (Cu Alloy), molybdenum (Mo), and copper-tungsten (Cu-W) may be used, but is not limited thereto.
At least one selected from the group consisting of, for example, Si, Ge, GaAs, GaN, ZnO, SiGe, and SiC may be used as the semiconductor material, but is not limited thereto.
The
The
The
A barrier layer (not shown) may be additionally formed on the
The
The upper surface of the
The
The
The
When the
The
For example, at least one or two or more alloys selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf may be used as the reflective material, but is not limited thereto. I never do that. As the ohmic contact material, a transparent conductive material and a metal material may be selectively used. That is, the transparent conductive material may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), May comprise at least one selected from the group consisting of indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx and RuOx / ITO, This is not limitative. As the metal material, for example, at least one selected from the group consisting of Ni, Ag, Ni / IrOx / Au, and Ni / IrOx / Au / ITO may be used.
For example, the
The
In order to reflect all the light from the
The
An upper surface of the
The
Alternatively, the
The
Examples of the transparent conductive material include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium (IGTO). At least one selected from the group consisting of tin oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, and RuOx / ITO may be used, but is not limited thereto. At least one selected from the group consisting of Au, Ti, Ni, Cu, Al, Cr, Ag, and Pt may be used as the metal material, but is not limited thereto. For example, at least one selected from the group consisting of SiO 2, SiO x, SiO x N y, Si 3 N 4, and Al 2 O 3 may be used as the transparent insulating material, but is not limited thereto.
When the first
When the
When the
In the drawing, the first
The first
Alternatively, the
The
The second
The
The first
For example, the first conductivity-
Another semiconductor layer may be formed below the first conductivity
Sides of the
When the side surface of the
In the drawing, the side surface of the
The
The first conductivity
The first
The first
The
Although not shown, an electron blocking layer may be further formed between the first conductivity
The
The
The second conductivity
In the growth of the
A
The
An
The
Although not shown, a
Alternatively, the
The
When the
The
The second
The second
When the first and second
When the first and second
Meanwhile, the
The
Grooves 110 (refer to FIG. 6) recessed inward may be formed on the rear surface of the first
The
A plurality of
The
When the size of the
The
The
Surface plasmon (wsp) refers to the collective charge density oiscillation of electrons occurring on the metal thin film surface.
Resonance is generated in the electrons and holes of the
Surface plasmons (wsp) may be generated by the interaction between the light generated in the
Electron-hole recombination produces surface plasmons (wsp) instead of photons, and these surface plasmons (wsp) couple with light. The coupling process of the
In conclusion, the internal quantum efficiency greatly depends on the spontaneous recombination rate, and the rapid increase in the spontaneous recombination can improve the light emission efficiency of the entire light emitting device.
In order for the surface plasmon (wsp) caused by the
In addition, the height of the
The distance d between the bottom surface of the
The width of the
The
The NATO particles may have a circular shape, but are not limited thereto. For example, the NATO particles may be formed in an oval shape, an polygon having an angle, a star shape, or the like.
The
The
When the
However, when the
However, the amount of light generated in the
In the
Therefore, by forming the
As shown in FIG. 4, even though the
When the current supplied to the
Accordingly, the current supplied to the
The
The lower surface of the
The
Typically, current flows intensively along the shortest path between the
In order to prevent such current concentration, the
The
The
The
The
Alternatively, the
For example, the first
5 to 12 illustrate a process for manufacturing the light emitting device according to the first embodiment.
Referring to FIG. 5, the lower second
The
The
The
A buffer layer (not shown) may be formed between the
The second conductivity
The
The
The first conductivity
Referring to FIG. 6, a
The
Referring to FIG. 7, a plurality of
The
Referring to FIG. 8, a
In addition, the
The first
The
The
Thus, the current may not flow completely through the
The
If the
The
Examples of the transparent conductive material include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium (IGTO). At least one selected from the group consisting of tin oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, and RuOx / ITO may be used, but is not limited thereto. At least one selected from the group consisting of Au, Ti, Ni, Cu, Al, Cr, Ag, and Pt may be used as the metal material, but is not limited thereto. For example, at least one selected from the group consisting of SiO 2, SiO x, SiO x N y, Si 3 N 4, and Al 2 O 3 may be used as the transparent insulating material, but is not limited thereto.
Referring to FIG. 9, the
The
The
The
As the reflective material, at least one or two or more alloys selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf are used, but not limited thereto. As the ohmic contact material, a conductive material and a metal material may be selectively used. That is, the ohmic contact materials include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium (IGTO). tin oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni, Ag, Ni / IrOx / Au and Ni / IrOx / Au / ITO At least one selected from the group consisting of can be used.
The
The
The
The
The
Referring to FIG. 10, the
The
Subsequently, mesa etching may be performed such that the side surface of the
The first
Referring to FIG. 11, a
The second
The second
Subsequently, an
The
The
Referring to FIG. 12, an etching process is performed using the
The
13 is a sectional view showing a light emitting device according to the second embodiment.
The second embodiment is similar to the first embodiment except that the
Referring to FIG. 13, the
In addition, the
The
The
To this end, a groove formed through the first
The
A plurality of
In order for the surface plasmon (wsp) caused by the
The
14 is a sectional view showing a light emitting device according to the third embodiment.
The third embodiment is similar to the second embodiment except that the insulating
Referring to FIG. 14, the light emitting device 1B according to the third embodiment may include a
In addition, the light emitting device 1B according to the third exemplary embodiment additionally includes the
The
The
Examples of the transparent conductive material include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium (IGTO). At least one selected from the group consisting of tin oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, and RuOx / ITO may be used, but is not limited thereto. At least one selected from the group consisting of Au, Ti, Ni, Cu, Al, Cr, Ag, and Pt may be used as the metal material, but is not limited thereto.
In this case, the first and second conductivity-type semiconductor layers 31 and 37 may be electrically shorted by the
Accordingly, the insulating
The insulating
The insulating
The back surface of the insulating
The insulating
The insulating
The insulating
15 is a cross-sectional view illustrating a light emitting device according to a fourth embodiment.
The fourth embodiment is similar to the third embodiment except that the second
Referring to FIG. 15, the
In addition, the
The second
The second
The second
The second
In order to prevent the second
The second
The
The second
The second
The first and second
The first and second
Although the first
The first
As the reflective material, at least one or two or more alloys selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf are used, but not limited thereto.
The ohmic contact materials include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAO), indium gallium zinc oxide (IGZO), and indium gallium tin oxide (IGTO). ), Aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni, Ag, Ni / IrOx / Au and Ni / IrOx / Au / ITO At least one selected from the group can be used.
16 is a cross-sectional view illustrating a light emitting device package according to an embodiment.
Referring to FIG. 16, the light emitting device package 200 according to the embodiment may include a body 330, a first lead electrode 310 and a second lead electrode 320 installed on the body 330, and the body ( The
The body 330 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the
The first lead electrode 310 and the second lead electrode 320 are electrically separated from each other, and provide power to the
In addition, the first and second lead electrodes 310 and 320 may increase light efficiency by reflecting light generated from the
The
In the embodiment, the
The molding member 340 may surround the
The light emitting device package 200 according to the embodiment includes a chip on board (COB) type, the upper surface of the body 330 is flat, the plurality of light emitting
10: support substrate
13: bonding layer
15: electrode layer
16, 53: reflective layer
19, 40: protective layer
22, 22a, 22b: current blocking layer
25, 25a, 25b: nanoparticles
30: light emitting structure
31: first conductive semiconductor layer
34: active layer
37: second conductivity type semiconductor layer
43: light extraction structure
46: electrode
50, 56: insulation layer
100: growth substrate
110: groove
wsp: surface plasmon
Claims (16)
An electrode layer disposed below the first conductivity type semiconductor layer;
An electrode disposed on the second conductive semiconductor layer;
A current blocking layer disposed between the electrode layer and the first conductive semiconductor layer and vertically overlapping the electrode; And
A light emitting device comprising a plurality of metal nanoparticles disposed between the current blocking layer and the first conductive semiconductor layer.
The first conductivity type semiconductor layer includes a groove concave in the direction of the active layer in the first conductivity type semiconductor layer,
The current blocking layer is disposed in the groove,
The metal light emitting device is disposed on the top surface of the groove.
The thickness of the current blocking layer is a light emitting device of 10nm to 100nm.
An electrode layer disposed below the first conductivity type semiconductor layer;
An electrode disposed on the second conductive semiconductor layer;
A current blocking layer disposed between the electrode layer and the second conductive semiconductor layer and penetrating the first conductive semiconductor layer and the active layer and vertically overlapping the electrode; And
A light emitting device comprising a plurality of metal nanoparticles disposed between the current blocking layer and the second conductive semiconductor layer.
A portion of the current blocking layer is surrounded by the first conductivity type semiconductor layer.
A groove formed through the active layer in the first conductive semiconductor layer and formed into the second conductive semiconductor layer;
The current blocking layer is disposed in the groove,
The metal nanoparticle is disposed on the current blocking layer in the groove.
The distance between the metal nanoparticles and the active layer is 3nm to 30nm light emitting device.
The metal nanoparticles include at least one or an alloy thereof selected from the group consisting of Al, Au, Pt and Ag.
A light emitting device in which an insulating layer is formed around the outer surface of the current blocking layer.
And a reflective layer disposed between the current blocking layer and the insulating layer.
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KR20200045768A (en) * | 2018-10-23 | 2020-05-06 | 엘지전자 주식회사 | Semiconductor light emitting device, manufacturing method thereof, and display device including the same |
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KR101220419B1 (en) * | 2012-04-27 | 2013-01-21 | 한국광기술원 | Vertical light emitting diode |
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