KR20120056843A - 실리콘 층 및 라미네이트된 리모트 인광체 층을 갖는 ｌｅｄ - Google Patents

실리콘 층 및 라미네이트된 리모트 인광체 층을 갖는 ｌｅｄ Download PDF

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Publication number
KR20120056843A
KR20120056843A KR1020127006022A KR20127006022A KR20120056843A KR 20120056843 A KR20120056843 A KR 20120056843A KR 1020127006022 A KR1020127006022 A KR 1020127006022A KR 20127006022 A KR20127006022 A KR 20127006022A KR 20120056843 A KR20120056843 A KR 20120056843A
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South Korea
Prior art keywords
layer
phosphor layer
phosphor
silicon
led
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KR1020127006022A
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English (en)
Korean (ko)
Inventor
그리고리 바신
폴 에스. 마틴
Original Assignee
코닌클리즈케 필립스 일렉트로닉스 엔.브이.
필립스 루미리즈 라이팅 캄파니 엘엘씨
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Publication of KR20120056843A publication Critical patent/KR20120056843A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape

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KR1020127006022A 2009-08-07 2010-07-07 실리콘 층 및 라미네이트된 리모트 인광체 층을 갖는 ｌｅｄ Withdrawn KR20120056843A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/537,909 US20110031516A1 (en) 2009-08-07 2009-08-07 Led with silicone layer and laminated remote phosphor layer
US12/537,909 2009-08-07
PCT/IB2010/053113 WO2011015959A1 (en) 2009-08-07 2010-07-07 Led with silicone layer and laminated remote phosphor layer

Publications (1)

Publication Number Publication Date
KR20120056843A true KR20120056843A (ko) 2012-06-04

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KR1020127006022A Withdrawn KR20120056843A (ko) 2009-08-07 2010-07-07 실리콘 층 및 라미네이트된 리모트 인광체 층을 갖는 ｌｅｄ

Country Status (9)

Country Link
US (1) US20110031516A1 (enExample)
EP (1) EP2462634A1 (enExample)
JP (1) JP2013501372A (enExample)
KR (1) KR20120056843A (enExample)
CN (1) CN102473820A (enExample)
BR (1) BR112012002431A2 (enExample)
RU (1) RU2012108576A (enExample)
TW (1) TW201123549A (enExample)
WO (1) WO2011015959A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101319360B1 (ko) * 2013-03-04 2013-10-16 유버 주식회사 칩온보드형 ｕｖ ｌｅｄ 패키지 및 그 제조방법
WO2015174566A1 (ko) * 2014-05-12 2015-11-19 주식회사 케이케이디씨 발광각도 조절이 가능한 형광필름이 구비된 led 조명 모듈 제조 방법

Families Citing this family (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8525207B2 (en) * 2008-09-16 2013-09-03 Osram Sylvania Inc. LED package using phosphor containing elements and light source containing same
US8912023B2 (en) 2009-04-08 2014-12-16 Ledengin, Inc. Method and system for forming LED light emitters
US8323998B2 (en) * 2009-05-15 2012-12-04 Achrolux Inc. Methods and apparatus for forming uniform layers of phosphor material on an LED encapsulation structure
US8384114B2 (en) 2009-06-27 2013-02-26 Cooledge Lighting Inc. High efficiency LEDs and LED lamps
JP5379615B2 (ja) * 2009-09-09 2013-12-25 パナソニック株式会社 照明装置
JP2011082339A (ja) * 2009-10-07 2011-04-21 Nitto Denko Corp 光半導体封止用キット
US9480133B2 (en) 2010-01-04 2016-10-25 Cooledge Lighting Inc. Light-emitting element repair in array-based lighting devices
US8653539B2 (en) 2010-01-04 2014-02-18 Cooledge Lighting, Inc. Failure mitigation in arrays of light-emitting devices
US8771577B2 (en) * 2010-02-16 2014-07-08 Koninklijke Philips N.V. Light emitting device with molded wavelength converting layer
CN102959708B (zh) 2010-06-29 2016-05-04 柯立芝照明有限公司 具有易弯曲基板的电子装置
US8901586B2 (en) * 2010-07-12 2014-12-02 Samsung Electronics Co., Ltd. Light emitting device and method of manufacturing the same
US20120081000A1 (en) * 2010-10-05 2012-04-05 Power Data Communications Co., Ltd. Led encapsulation process and shield structure made thereby
TWI445216B (zh) * 2010-11-17 2014-07-11 宏齊科技股份有限公司 具有沈積式螢光批覆層之發光二極體封裝結構及其製作方法
DE102011013369A1 (de) * 2010-12-30 2012-07-05 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Mehrzahl von Halbleiterbauelementen
TWI441361B (zh) * 2010-12-31 2014-06-11 英特明光能股份有限公司 發光二極體封裝結構及其製造方法
EP2665796A1 (en) * 2011-01-21 2013-11-27 Osram Sylvania Inc. Luminescent converter and led light source containing same
US8941137B2 (en) * 2011-03-06 2015-01-27 Mordehai MARGALIT Light emitting diode package and method of manufacture
EP2689458B8 (en) * 2011-03-25 2018-08-29 Lumileds Holding B.V. Patterned uv sensitive silicone-phosphor layer over leds, and method for fabricating the same
KR20120119350A (ko) * 2011-04-21 2012-10-31 삼성전자주식회사 발광소자 모듈 및 이의 제조방법
US9029887B2 (en) 2011-04-22 2015-05-12 Micron Technology, Inc. Solid state lighting devices having improved color uniformity and associated methods
DE102011102350A1 (de) * 2011-05-24 2012-11-29 Osram Opto Semiconductors Gmbh Optisches Element, optoelektronisches Bauelement und Verfahren zur Herstellung dieser
US8480267B2 (en) 2011-06-28 2013-07-09 Osram Sylvania Inc. LED lighting apparatus, systems and methods of manufacture
US8585243B2 (en) 2011-06-28 2013-11-19 Osram Sylvania Inc. LED lighting apparatus, systems and methods of manufacture
WO2013008157A1 (en) 2011-07-14 2013-01-17 Koninklijke Philips Electronics N.V. Method of manufacturing a phosphor-enhanced light source
KR101294415B1 (ko) 2011-07-20 2013-08-08 엘지이노텍 주식회사 광학 부재 및 이를 포함하는 표시장치
CN102270730A (zh) * 2011-07-27 2011-12-07 晶科电子（广州）有限公司 一种无金线的led器件
US8952402B2 (en) 2011-08-26 2015-02-10 Micron Technology, Inc. Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods
US8579451B2 (en) 2011-09-15 2013-11-12 Osram Sylvania Inc. LED lamp
US9349927B2 (en) * 2011-10-18 2016-05-24 Nitto Denko Corporation Encapsulating sheet and optical semiconductor element device
US9444024B2 (en) * 2011-11-10 2016-09-13 Cree, Inc. Methods of forming optical conversion material caps
US10043960B2 (en) * 2011-11-15 2018-08-07 Cree, Inc. Light emitting diode (LED) packages and related methods
JP2013135084A (ja) * 2011-12-26 2013-07-08 Nitto Denko Corp 発光ダイオード装置の製造方法
CN104094424B (zh) 2012-02-10 2016-12-21 皇家飞利浦有限公司 形成芯片级led封装的模制透镜及其制造方法
US9388959B2 (en) 2012-03-02 2016-07-12 Osram Sylvania Inc. White-light emitter having a molded phosphor sheet and method of making same
US8591076B2 (en) 2012-03-02 2013-11-26 Osram Sylvania Inc. Phosphor sheet having tunable color temperature
JP5912712B2 (ja) * 2012-03-21 2016-04-27 スタンレー電気株式会社 照明用光学系
WO2013144919A1 (en) 2012-03-29 2013-10-03 Koninklijke Philips N.V. Phosphor in inorganic binder for led applications
CN107919430B (zh) 2012-03-29 2021-11-09 皇家飞利浦有限公司 用于led应用的无机结合剂中的磷光体
US20130279194A1 (en) * 2012-04-22 2013-10-24 Liteideas, Llc Light emitting systems and related methods
CN103378260A (zh) * 2012-04-24 2013-10-30 展晶科技(深圳)有限公司 发光二极管封装结构的制造方法
US9231178B2 (en) 2012-06-07 2016-01-05 Cooledge Lighting, Inc. Wafer-level flip chip device packages and related methods
EP2875532B1 (en) 2012-07-20 2019-02-27 Lumileds Holding B.V. Led with ceramic green phosphor and protected red phosphor layer
JP6024957B2 (ja) * 2012-09-24 2016-11-16 東芝ライテック株式会社 発光装置および照明装置
CN104781931A (zh) 2012-11-07 2015-07-15 皇家飞利浦有限公司 波长转换的发光设备
US9543478B2 (en) 2012-11-07 2017-01-10 Koninklijke Philips N.V. Light emitting device including a filter and a protective layer
CN103022325B (zh) * 2012-12-24 2016-01-20 佛山市香港科技大学Led-Fpd工程技术研究开发中心 应用远距式荧光粉层的led封装结构及其制成方法
US10439107B2 (en) * 2013-02-05 2019-10-08 Cree, Inc. Chip with integrated phosphor
US8876312B2 (en) * 2013-03-05 2014-11-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Lighting device and apparatus with spectral converter within a casing
US8928219B2 (en) 2013-03-05 2015-01-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Lighting device with spectral converter
US9470395B2 (en) * 2013-03-15 2016-10-18 Abl Ip Holding Llc Optic for a light source
US10400984B2 (en) * 2013-03-15 2019-09-03 Cree, Inc. LED light fixture and unitary optic member therefor
TWI527274B (zh) * 2013-04-29 2016-03-21 新世紀光電股份有限公司 發光二極體封裝結構
KR20150025231A (ko) * 2013-08-28 2015-03-10 서울반도체 주식회사 광원 모듈 및 그 제조 방법, 및 백라이트 유닛
US20150226385A1 (en) * 2014-02-11 2015-08-13 Cree, Inc. Systems and Methods for Application of Coatings Including Thixotropic Agents onto Optical Elements, and Optical Elements Having Coatings Including Thixotropic Agents
US9680067B2 (en) 2014-03-18 2017-06-13 GE Lighting Solutions, LLC Heavily phosphor loaded LED packages having higher stability
US9590148B2 (en) 2014-03-18 2017-03-07 GE Lighting Solutions, LLC Encapsulant modification in heavily phosphor loaded LED packages for improved stability
DE102014106074A1 (de) * 2014-04-30 2015-11-19 Osram Opto Semiconductors Gmbh Leuchtvorrichtung und Verfahren zum Herstellen einer Leuchtvorrichtung
CN105098025A (zh) * 2014-05-07 2015-11-25 新世纪光电股份有限公司 发光装置
WO2015170514A1 (ja) * 2014-05-09 2015-11-12 富士高分子工業株式会社 蛍光体含有識別物体及びその製造方法
US9997676B2 (en) 2014-05-14 2018-06-12 Genesis Photonics Inc. Light emitting device and manufacturing method thereof
TWI557952B (zh) 2014-06-12 2016-11-11 新世紀光電股份有限公司 發光元件
TWI641285B (zh) 2014-07-14 2018-11-11 新世紀光電股份有限公司 發光模組與發光單元的製作方法
TWI631733B (zh) * 2014-10-09 2018-08-01 新世紀光電股份有限公司 發光裝置
TWI583025B (zh) * 2014-10-09 2017-05-11 新世紀光電股份有限公司 具雙基座之薄膜式覆晶發光二極體及其製造方法
US9917226B1 (en) 2016-09-15 2018-03-13 Sharp Kabushiki Kaisha Substrate features for enhanced fluidic assembly of electronic devices
US9985190B2 (en) 2016-05-18 2018-05-29 eLux Inc. Formation and structure of post enhanced diodes for orientation control
US9755110B1 (en) 2016-07-27 2017-09-05 Sharp Laboratories Of America, Inc. Substrate with topological features for steering fluidic assembly LED disks
US10249599B2 (en) 2016-06-29 2019-04-02 eLux, Inc. Laminated printed color conversion phosphor sheets
US9892944B2 (en) 2016-06-23 2018-02-13 Sharp Kabushiki Kaisha Diodes offering asymmetric stability during fluidic assembly
CN104485411A (zh) * 2014-11-14 2015-04-01 江苏脉锐光电科技有限公司 一种远程荧光粉透镜和制造方法及其应用
DE102015001723A1 (de) 2015-02-05 2016-08-11 Sergey Dyukin Die Methode der Verbesserung der Charakteristiken von Leuchtgeräten mit einer Stirnseitenbeleuchtung des Lichtleiters, die den Luminophor beinhalten, der mit Halbleiterstrukturen beleuchtet wird.
DE102015103835A1 (de) * 2015-03-16 2016-09-22 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement und Verfahren zur Herstellung eines lichtemittierenden Bauelements
US10984735B2 (en) * 2015-04-17 2021-04-20 Nanosys, Inc. White point uniformity in display devices
US10217914B2 (en) * 2015-05-27 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor light emitting device
CN106469772B (zh) * 2015-08-18 2018-01-05 江苏诚睿达光电有限公司 一种基于滚压式的热塑性树脂光转换体贴合封装led的工艺方法
US10816165B2 (en) 2015-11-19 2020-10-27 Lsi Industries, Inc. LED luminaire assembly
KR101836253B1 (ko) * 2015-12-15 2018-03-08 현대자동차 주식회사 광원 모듈 및 이를 이용한 차량용 헤드 램프
USD781482S1 (en) 2015-12-28 2017-03-14 Lsi Industries, Inc. Luminaire
EP3205584B1 (en) * 2016-02-12 2020-06-03 Goodrich Lighting Systems GmbH Exterior aircraft light and aircraft comprising the same
US9627437B1 (en) 2016-06-30 2017-04-18 Sharp Laboratories Of America, Inc. Patterned phosphors in through hole via (THV) glass
CN109791968A (zh) 2016-07-26 2019-05-21 克利公司 发光二极管、组件和相关方法
DE102016115533A1 (de) * 2016-08-22 2018-02-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und Scheinwerfer mit einem optoelektronischen Halbleiterchip
US10243097B2 (en) 2016-09-09 2019-03-26 eLux Inc. Fluidic assembly using tunable suspension flow
US9837390B1 (en) 2016-11-07 2017-12-05 Corning Incorporated Systems and methods for creating fluidic assembly structures on a substrate
JP7108171B2 (ja) * 2016-12-27 2022-07-28 日亜化学工業株式会社 発光装置
US10319889B2 (en) * 2016-12-27 2019-06-11 Nichia Corporation Light emitting device
US10361349B2 (en) * 2017-09-01 2019-07-23 Cree, Inc. Light emitting diodes, components and related methods
US11121298B2 (en) 2018-05-25 2021-09-14 Creeled, Inc. Light-emitting diode packages with individually controllable light-emitting diode chips
US11335833B2 (en) 2018-08-31 2022-05-17 Creeled, Inc. Light-emitting diodes, light-emitting diode arrays and related devices
US11233183B2 (en) 2018-08-31 2022-01-25 Creeled, Inc. Light-emitting diodes, light-emitting diode arrays and related devices
USD902448S1 (en) 2018-08-31 2020-11-17 Cree, Inc. Light emitting diode package
US11201267B2 (en) * 2018-12-21 2021-12-14 Lumileds Llc Photoresist patterning process supporting two step phosphor-deposition to form an LED matrix array
CH716066A1 (de) 2019-04-03 2020-10-15 Jk Holding Gmbh Bestrahlungsmodul sowie Vorrichtung und Verfahren zum Bestrahlen mit medizinisch-kosmetischer Strahlung.
US11101411B2 (en) 2019-06-26 2021-08-24 Creeled, Inc. Solid-state light emitting devices including light emitting diodes in package structures
USD933881S1 (en) 2020-03-16 2021-10-19 Hgci, Inc. Light fixture having heat sink
USD933872S1 (en) 2020-03-16 2021-10-19 Hgci, Inc. Light fixture
US11032976B1 (en) 2020-03-16 2021-06-15 Hgci, Inc. Light fixture for indoor grow application and components thereof
US20210396911A1 (en) * 2020-06-18 2021-12-23 Myotek Industries Multi-injection molded optical grade silicone lens and method for producing incorporating a glow in the dark phosphor material
CN115411023B (zh) * 2022-08-22 2023-09-19 深圳市未林森科技有限公司 一种误差小的cob光源颜色均匀控制工艺方法
TWI857379B (zh) 2022-10-28 2024-10-01 財團法人工業技術研究院 色轉換面板與顯示器
EP4406858A1 (en) 2023-01-24 2024-07-31 Goodrich Lighting Systems GmbH & Co. KG Aircraft light, aircraft comprising an aircraft light, and method of manufacturing an aircraft light

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6194742B1 (en) 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
US6133589A (en) 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
JP4122738B2 (ja) * 2001-07-26 2008-07-23 松下電工株式会社 発光装置の製造方法
JP4496774B2 (ja) * 2003-12-22 2010-07-07 日亜化学工業株式会社 半導体装置の製造方法
JP2005259847A (ja) * 2004-03-10 2005-09-22 Nitto Denko Corp 光半導体装置の製造方法
US7361938B2 (en) 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
TW200614548A (en) * 2004-07-09 2006-05-01 Matsushita Electric Industrial Co Ltd Light-emitting device
US7352011B2 (en) * 2004-11-15 2008-04-01 Philips Lumileds Lighting Company, Llc Wide emitting lens for LED useful for backlighting
US7858408B2 (en) * 2004-11-15 2010-12-28 Koninklijke Philips Electronics N.V. LED with phosphor tile and overmolded phosphor in lens
US20060171152A1 (en) * 2005-01-20 2006-08-03 Toyoda Gosei Co., Ltd. Light emitting device and method of making the same
EP1889301B1 (en) * 2005-05-25 2016-09-28 Philips Intellectual Property & Standards GmbH Electroluminescence device
US7754507B2 (en) 2005-06-09 2010-07-13 Philips Lumileds Lighting Company, Llc Method of removing the growth substrate of a semiconductor light emitting device
US7319246B2 (en) * 2005-06-23 2008-01-15 Lumination Llc Luminescent sheet covering for LEDs
KR100665219B1 (ko) * 2005-07-14 2007-01-09 삼성전기주식회사 파장변환형 발광다이오드 패키지
US7344952B2 (en) * 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
JP2007273562A (ja) * 2006-03-30 2007-10-18 Toshiba Corp 半導体発光装置
JP2008166782A (ja) * 2006-12-26 2008-07-17 Seoul Semiconductor Co Ltd 発光素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101319360B1 (ko) * 2013-03-04 2013-10-16 유버 주식회사 칩온보드형 ｕｖ ｌｅｄ 패키지 및 그 제조방법
WO2015174566A1 (ko) * 2014-05-12 2015-11-19 주식회사 케이케이디씨 발광각도 조절이 가능한 형광필름이 구비된 led 조명 모듈 제조 방법
KR20150129890A (ko) * 2014-05-12 2015-11-23 주식회사 케이케이디씨 발광각도 조절이 가능한 형광필름이 구비된 led 조명 모듈 제조 방법

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WO2011015959A1 (en) 2011-02-10
CN102473820A (zh) 2012-05-23
TW201123549A (en) 2011-07-01
US20110031516A1 (en) 2011-02-10
EP2462634A1 (en) 2012-06-13

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