KR20120049399A - 반도체 디바이스, 반도체 디바이스 제조 방법 및 반도체 디바이스 제조 장치 - Google Patents

반도체 디바이스, 반도체 디바이스 제조 방법 및 반도체 디바이스 제조 장치 Download PDF

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Publication number
KR20120049399A
KR20120049399A KR1020127008779A KR20127008779A KR20120049399A KR 20120049399 A KR20120049399 A KR 20120049399A KR 1020127008779 A KR1020127008779 A KR 1020127008779A KR 20127008779 A KR20127008779 A KR 20127008779A KR 20120049399 A KR20120049399 A KR 20120049399A
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KR
South Korea
Prior art keywords
substrate
semiconductor device
oxygen plasma
plasma
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020127008779A
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English (en)
Korean (ko)
Inventor
마사루 사사키
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20120049399A publication Critical patent/KR20120049399A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01338—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Plasma Technology (AREA)
KR1020127008779A 2009-10-04 2010-10-02 반도체 디바이스, 반도체 디바이스 제조 방법 및 반도체 디바이스 제조 장치 Ceased KR20120049399A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/573,138 2009-10-04
US12/573,138 US8497196B2 (en) 2009-10-04 2009-10-04 Semiconductor device, method for fabricating the same and apparatus for fabricating the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020147001310A Division KR101384590B1 (ko) 2009-10-04 2010-10-02 반도체 디바이스 제조 방법 및 반도체 디바이스 제조 장치

Publications (1)

Publication Number Publication Date
KR20120049399A true KR20120049399A (ko) 2012-05-16

Family

ID=43822528

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020127008779A Ceased KR20120049399A (ko) 2009-10-04 2010-10-02 반도체 디바이스, 반도체 디바이스 제조 방법 및 반도체 디바이스 제조 장치
KR1020147001310A Active KR101384590B1 (ko) 2009-10-04 2010-10-02 반도체 디바이스 제조 방법 및 반도체 디바이스 제조 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020147001310A Active KR101384590B1 (ko) 2009-10-04 2010-10-02 반도체 디바이스 제조 방법 및 반도체 디바이스 제조 장치

Country Status (6)

Country Link
US (1) US8497196B2 (https=)
JP (1) JP5442871B2 (https=)
KR (2) KR20120049399A (https=)
CN (1) CN102549756B (https=)
TW (1) TWI423336B (https=)
WO (1) WO2011040047A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180012763A1 (en) * 2014-12-24 2018-01-11 Tokyo Electron Limited Doping method, doping apparatus, and semiconductor element manufacturing method

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142447A (ja) * 1993-11-16 1995-06-02 Kawasaki Steel Corp 半導体装置の製造方法
JP3402937B2 (ja) 1996-06-28 2003-05-06 三洋電機株式会社 半導体装置の製造方法
TW376551B (en) 1996-08-07 1999-12-11 Matsushita Electric Industrial Co Ltd Aftertreatment method of dry etching and process of manufacturing semiconductor device
JP3217280B2 (ja) 1996-10-30 2001-10-09 松下電器産業株式会社 ドライエッチング後処理方法とｍｏｓ型半導体装置の製造方法
JP4048618B2 (ja) * 1998-10-07 2008-02-20 ソニー株式会社 半導体装置の製造方法
US7223676B2 (en) * 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
WO2002059956A1 (en) * 2001-01-25 2002-08-01 Tokyo Electron Limited Method of producing electronic device material
US6534420B2 (en) * 2001-07-18 2003-03-18 Micron Technology, Inc. Methods for forming dielectric materials and methods for forming semiconductor devices
CN100390945C (zh) * 2002-03-29 2008-05-28 东京毅力科创株式会社 基底绝缘膜的形成方法
TWI225668B (en) * 2002-05-13 2004-12-21 Tokyo Electron Ltd Substrate processing method
JP2005051140A (ja) * 2003-07-31 2005-02-24 Toshiba Corp 半導体装置およびその製造方法
US6982196B2 (en) * 2003-11-04 2006-01-03 International Business Machines Corporation Oxidation method for altering a film structure and CMOS transistor structure formed therewith
JP2006165335A (ja) * 2004-12-08 2006-06-22 Toshiba Corp 半導体装置
JP5084169B2 (ja) * 2005-04-28 2012-11-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI408734B (zh) * 2005-04-28 2013-09-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5422854B2 (ja) * 2007-08-31 2014-02-19 国立大学法人東北大学 半導体装置の製造方法
JP2008098640A (ja) * 2007-10-09 2008-04-24 Toshiba Corp 半導体装置の製造方法
WO2009099252A1 (ja) 2008-02-08 2009-08-13 Tokyo Electron Limited 絶縁膜のプラズマ改質処理方法

Also Published As

Publication number Publication date
KR20140016433A (ko) 2014-02-07
CN102549756B (zh) 2015-03-04
WO2011040047A1 (en) 2011-04-07
JP2013506986A (ja) 2013-02-28
TWI423336B (zh) 2014-01-11
TW201131654A (en) 2011-09-16
US8497196B2 (en) 2013-07-30
CN102549756A (zh) 2012-07-04
KR101384590B1 (ko) 2014-04-11
US20110079826A1 (en) 2011-04-07
JP5442871B2 (ja) 2014-03-12

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