CN102549756B - 半导体器件、其制造方法及其制造装置 - Google Patents

半导体器件、其制造方法及其制造装置 Download PDF

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Publication number
CN102549756B
CN102549756B CN201080044368.8A CN201080044368A CN102549756B CN 102549756 B CN102549756 B CN 102549756B CN 201080044368 A CN201080044368 A CN 201080044368A CN 102549756 B CN102549756 B CN 102549756B
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China
Prior art keywords
substrate
oxygen plasma
manufacturing
semiconductor device
plasma
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CN201080044368.8A
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English (en)
Chinese (zh)
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CN102549756A (zh
Inventor
佐佐木胜
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01338—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Plasma Technology (AREA)
CN201080044368.8A 2009-10-04 2010-10-02 半导体器件、其制造方法及其制造装置 Active CN102549756B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/573,138 2009-10-04
US12/573,138 US8497196B2 (en) 2009-10-04 2009-10-04 Semiconductor device, method for fabricating the same and apparatus for fabricating the same
PCT/JP2010/005926 WO2011040047A1 (en) 2009-10-04 2010-10-02 Semiconductor device, method for fabricating the same and apparatus for fabricating the same

Publications (2)

Publication Number Publication Date
CN102549756A CN102549756A (zh) 2012-07-04
CN102549756B true CN102549756B (zh) 2015-03-04

Family

ID=43822528

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080044368.8A Active CN102549756B (zh) 2009-10-04 2010-10-02 半导体器件、其制造方法及其制造装置

Country Status (6)

Country Link
US (1) US8497196B2 (https=)
JP (1) JP5442871B2 (https=)
KR (2) KR20120049399A (https=)
CN (1) CN102549756B (https=)
TW (1) TWI423336B (https=)
WO (1) WO2011040047A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180012763A1 (en) * 2014-12-24 2018-01-11 Tokyo Electron Limited Doping method, doping apparatus, and semiconductor element manufacturing method

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030017717A1 (en) * 2001-07-18 2003-01-23 Ahn Kie Y. Methods for forming dielectric materials and methods for forming semiconductor devices
CN1489784A (zh) * 2001-01-25 2004-04-14 ���������ƴ���ʽ���� 电子器件材料的制造方法
US20050023567A1 (en) * 2003-07-31 2005-02-03 Kazumi Nishinohara Semiconductor device and method for manufacturing the same
CN1620720A (zh) * 2002-03-29 2005-05-25 东京毅力科创株式会社 基底绝缘膜的形成方法
CN1624870A (zh) * 2003-11-04 2005-06-08 国际商业机器公司 改变膜结构的氧化方法和以之形成的cmos晶体管结构
CN1659692A (zh) * 2002-05-13 2005-08-24 东京毅力科创株式会社 基板处理方法
CN1787230A (zh) * 2004-12-08 2006-06-14 株式会社东芝 包括场效应晶体管的半导体装置
CN1870233A (zh) * 2005-04-28 2006-11-29 株式会社半导体能源研究所 半导体器件及其制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142447A (ja) * 1993-11-16 1995-06-02 Kawasaki Steel Corp 半導体装置の製造方法
JP3402937B2 (ja) 1996-06-28 2003-05-06 三洋電機株式会社 半導体装置の製造方法
TW376551B (en) 1996-08-07 1999-12-11 Matsushita Electric Industrial Co Ltd Aftertreatment method of dry etching and process of manufacturing semiconductor device
JP3217280B2 (ja) 1996-10-30 2001-10-09 松下電器産業株式会社 ドライエッチング後処理方法とｍｏｓ型半導体装置の製造方法
JP4048618B2 (ja) * 1998-10-07 2008-02-20 ソニー株式会社 半導体装置の製造方法
US7223676B2 (en) * 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
JP5084169B2 (ja) * 2005-04-28 2012-11-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5422854B2 (ja) * 2007-08-31 2014-02-19 国立大学法人東北大学 半導体装置の製造方法
JP2008098640A (ja) * 2007-10-09 2008-04-24 Toshiba Corp 半導体装置の製造方法
WO2009099252A1 (ja) 2008-02-08 2009-08-13 Tokyo Electron Limited 絶縁膜のプラズマ改質処理方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1489784A (zh) * 2001-01-25 2004-04-14 ���������ƴ���ʽ���� 电子器件材料的制造方法
US20030017717A1 (en) * 2001-07-18 2003-01-23 Ahn Kie Y. Methods for forming dielectric materials and methods for forming semiconductor devices
CN1620720A (zh) * 2002-03-29 2005-05-25 东京毅力科创株式会社 基底绝缘膜的形成方法
CN1659692A (zh) * 2002-05-13 2005-08-24 东京毅力科创株式会社 基板处理方法
US20050023567A1 (en) * 2003-07-31 2005-02-03 Kazumi Nishinohara Semiconductor device and method for manufacturing the same
CN1624870A (zh) * 2003-11-04 2005-06-08 国际商业机器公司 改变膜结构的氧化方法和以之形成的cmos晶体管结构
CN1787230A (zh) * 2004-12-08 2006-06-14 株式会社东芝 包括场效应晶体管的半导体装置
CN1870233A (zh) * 2005-04-28 2006-11-29 株式会社半导体能源研究所 半导体器件及其制造方法

Also Published As

Publication number Publication date
KR20140016433A (ko) 2014-02-07
WO2011040047A1 (en) 2011-04-07
JP2013506986A (ja) 2013-02-28
TWI423336B (zh) 2014-01-11
TW201131654A (en) 2011-09-16
US8497196B2 (en) 2013-07-30
CN102549756A (zh) 2012-07-04
KR20120049399A (ko) 2012-05-16
KR101384590B1 (ko) 2014-04-11
US20110079826A1 (en) 2011-04-07
JP5442871B2 (ja) 2014-03-12

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