KR20110135412A - 반사 방지막 형성용 조성물 및 반사 방지막 - Google Patents
반사 방지막 형성용 조성물 및 반사 방지막 Download PDFInfo
- Publication number
- KR20110135412A KR20110135412A KR1020117025465A KR20117025465A KR20110135412A KR 20110135412 A KR20110135412 A KR 20110135412A KR 1020117025465 A KR1020117025465 A KR 1020117025465A KR 20117025465 A KR20117025465 A KR 20117025465A KR 20110135412 A KR20110135412 A KR 20110135412A
- Authority
- KR
- South Korea
- Prior art keywords
- composition
- fluorine
- metal alkoxide
- antireflection film
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 50
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- 238000004925 denaturation Methods 0.000 description 4
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- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000004611 light stabiliser Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- MCVVUJPXSBQTRZ-ONEGZZNKSA-N methyl (e)-but-2-enoate Chemical compound COC(=O)\C=C\C MCVVUJPXSBQTRZ-ONEGZZNKSA-N 0.000 description 1
- CCRCUPLGCSFEDV-BQYQJAHWSA-N methyl trans-cinnamate Chemical compound COC(=O)\C=C\C1=CC=CC=C1 CCRCUPLGCSFEDV-BQYQJAHWSA-N 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 125000002560 nitrile group Chemical group 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
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- 238000009840 oxygen flask method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000005359 phenoxyalkyl group Chemical group 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 125000006225 propoxyethyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 1
- 239000001572 propyl (E)-3-phenylprop-2-enoate Substances 0.000 description 1
- ZHDCHCTZRODSEN-HWKANZROSA-N propyl (e)-but-2-enoate Chemical compound CCCOC(=O)\C=C\C ZHDCHCTZRODSEN-HWKANZROSA-N 0.000 description 1
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 1
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- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
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- 150000003377 silicon compounds Chemical class 0.000 description 1
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- 239000011775 sodium fluoride Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 210000004243 sweat Anatomy 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
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- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- MZQZQKZKTGRQCG-UHFFFAOYSA-J thorium tetrafluoride Chemical compound F[Th](F)(F)F MZQZQKZKTGRQCG-UHFFFAOYSA-J 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- ZFDIRQKJPRINOQ-UHFFFAOYSA-N transbutenic acid ethyl ester Natural products CCOC(=O)C=CC ZFDIRQKJPRINOQ-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229960002415 trichloroethylene Drugs 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- 229940029284 trichlorofluoromethane Drugs 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
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- C08L101/00—Compositions of unspecified macromolecular compounds
- C08L101/02—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
- C08L101/04—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups containing halogen atoms
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
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Abstract
본 발명은,
(A) 가수분해성 금속 알콕사이드 및/또는 그 가수분해물,
(B) 일반식 (M)
[식 중,
X1 및 X2는 같거나 다르고, H 또는 F이며,
X3은 H, F, CH3 또는 CF3이고,
X4 및 X5는 같거나 다르고, H, F 또는 CH3이며,
Rf1은, 탄소수 1 ~ 40의 불소 함유 알킬기 또는 탄소수 2 ~ 100의 에테르 결합을 가지는 불소 함유 알킬기에 Y3이 1 ~ 3개 결합하고 있는 유기기이고,
Y3은, 가수분해성 금속 알콕사이드와 반응할 수 있는 관능기, 또는 당해 반응기를 가지는 탄소수 1 ~ 10의 1가의 유기기이며,
a는 0 ~ 3의 정수이고,
b 및 c는 같거나 다르고, 0 또는 1이다.)
으로 나타내지는 구조 단위로 이루어지는 불소 함유 중합체; 및
(C) 비점이 70℃ 이상이고, 또한 용해도 파라미터가 8.0 ~ 10.0인 용매
를 함유하는 반사 방지막 형성용 조성물을 제공한다.
Description
도 2는 X선 전자 분자 분광법에 의하여 측정한, 방출각에 대한 조성비(F/Si)를 나타내는 그래프이다(실시예 4, 참고예 4).
도 3은 X선 전자 분자 분광법에 의하여 측정한, 방출각에 대한 조성비(F/Si)를 나타내는 그래프이다(실시예 5).
도 4는 X선 전자 분자 분광법에 의하여 측정한, 방출각에 대한 조성비(F/Si)를 나타내는 그래프이다(실시예 6, 참고예 5).
도 5는 X선 전자 분자 분광법에 의하여 측정한, 방출각에 대한 조성비(F/Si)를 나타내는 그래프이다(실시예 7 ~ 9).
도 6은 파장 300nm ~ 1000nm의 광의 반사율을 나타내는 차트이다.
조성물 | 무기 성분액 |
폴리머 | 폴리머/SiO2 (w/w) |
사용 용매 | 고형분 (wt%) |
|
실시예 1 | A | 2 | ARSi25 | 75/25 | MIBK | 5.0 |
실시예 2 | B | 2 | ARSi25 | 50/50 | MIBK | 5.0 |
실시예 3 | C | 2 | ARSi25 | 25/75 | MIBK | 5.0 |
참고예 1 | D | 2 | ARSi25 | 75/25 | EtOH | 9.0 |
참고예 2 | E | 2 | ARSi25 | 50/50 | EtOH | 9.0 |
참고예 3 | F | 2 | ARSi25 | 25/75 | EtOH | 9.0 |
조성물 | A | B | C |
ARSi25/SiO2 (w/w) | 75/25 | 50/50 | 25/75 |
무기 성분액 2 (g) | 0.2 | 0.4 | 0.6 |
ARSi25 용액 (g) | 0.73 | 0.49 | 0.24 |
첨가 MIBK 양 (g) | 1.47 | 1.51 | 1.56 |
합계량 (g) | 2.4 | 2.4 | 2.4 |
고형분 농도 | 5 | 5 | 5 |
조성물 | D | E | F |
ARSi25/SiO2 (w/w) | 75/25 | 50/50 | 25/75 |
무기 성분액 2 (g) | 0.2 | 0.4 | 0.6 |
ARSi25 용액 (g) | 0.73 | 0.49 | 0.24 |
첨가 EtOH 양 (g) | 0.40 | 0.44 | 0.49 |
합계량 (g) | 1.33 | 1.33 | 1.33 |
고형분 농도 | 9 | 9 | 9 |
조성물 | A, D | B, E | C, F |
ARSi25/SiO2 | 75/25 | 50/50 | 25/75 |
이론 조성비 F/Si | 5.36 | 1.79 | 0.60 |
조성물 | 무기 성분액 |
폴리머 | 폴리머/SiO2 (w/w) |
사용 용매 | 고형분 (wt%) |
|
실시예 4 | G | 1 | PAEC-0 | 50/50 | MEK | 7 |
참고예 4 | H | 1 | PAEC-0 | 50/50 | MeOH | 2.5 |
조성물 | G |
PAEC-0/SiO2 (w/w) | 50/50 |
무기 성분액 1 (g) | 0.48 |
PAEC-0 용액 (g) | 0.7 |
첨가 MEK 양 (g) | 0.9 |
합계량 (g) | 2.1 |
고형분 농도 계산 결과 | 7.0 |
조성물 | H |
PAEC-0/SiO2 (w/w) | 50/50 |
무기 성분액 1 (g) | 0.3 |
졸 고형분 양 (g) | 0.025 |
PAEC-0 용액 (g) | 0.25 |
첨가 MeOH 양 (g) | 1.48 |
고형분 농도 계산 결과 | 2.5 |
조성물 | 무기 성분액 |
폴리머 | 폴리머/SiO2 (w/w) |
사용 용매 | 고형분 (wt%) |
|
실시예 5 | 1 | 1 | PAEC-1 | 25/75 | MIBK | 7 |
조성물 | I |
PAEC-1/SiO2 (w/w) | 25/75 |
무기 성분액 1 (g) | 0.5 |
PAEC-1 용액 (g) | 0.25 |
첨가 MIBK 양 (g) | 0.68 |
합계량 (g) | 1.43 |
고형분 농도 계산 결과 | 7 |
조성물 | 무기 성분액 |
폴리머 | 폴리머/SiO2 (w/w) |
사용 용매 | 고형분 (wt%) |
|
실시예 6 | J | 2 | PAEC-1 | 50/50 | 초산 에틸 | 4.8 |
참고예 5 | K | 2 | PAEC-1 | 50/50 | 에틸 셀로솔브 | 5 |
조성물 | J |
PAEC-1/SiO2 (w/w) | 50/50 |
무기 성분액 1 (g) | 0.24 |
PAEC-1 용액 (g) | 0.36 |
첨가 초산 에틸 양 (g) | 0.90 |
합계량 (g) | 1.50 |
고형분 농도 계산 결과 | 4.8 |
조성물 | K |
PAEC-1/SiO2 (w/w) | 50/50 |
무기 성분액 1 (g) | 0.24 |
PAEC-1 용액 (g) | 0.36 |
첨가 에틸 셀로솔브 양 (g) | 0.90 |
합계량 (g) | 1.50 |
고형분 농도 계산 결과 | 4.8 |
조성물 | 무기 성분액 |
폴리머 | 폴리머/SiO2 (w/w) |
사용 용매 | 고형분 (wt%) |
|
실시예 7 | L | 1 | PAEC-0 | 75/25 | 초산 부틸 | 7 |
실시예 8 | M | 1 | PAEC-0 | 50/50 | 초산 부틸 | 7 |
실시예 9 | N | 1 | PAEC-0 | 25/75 | 초산 부틸 | 7 |
조성물 | L | M | N |
PAEC-0/SiO2 (w/w) | 75/25 | 50/50 | 25/75 |
무기 성분액 1 (g) | 0.24 | 0.48 | 0.72 |
PAEC-0 용액 (g) | 1.1 | 0.7 | 0.4 |
첨가 초산 부틸 양 (g) | 0.7 | 0.9 | 1 |
합계량 (g) | 2.1 | 2.1 | 2.1 |
고형분 농도 계산 결과 | 7 | 7 | 7 |
조성물 | L | M | N |
PAEC-0/SiO2 (w/w) | 75/25 | 50/50 | 25/75 |
F/Si | 4.93 | 1.64 | 0.55 |
Claims (6)
- (A) 가수분해성 금속 알콕사이드 및/또는 그 가수분해물,
(B) 일반식 (M)
[화학식 1]
[식 중,
X1 및 X2는 같거나 다르고, H 또는 F이며,
X3은 H, F, CH3 또는 CF3이고,
X4 및 X5는 같거나 다르고, H, F 또는 CH3이며,
Rf1은, 탄소수 1 ~ 40의 불소 함유 알킬기 또는 탄소수 2 ~ 100의 에테르 결합을 가지는 불소 함유 알킬기에 Y3이 1 ~ 3개 결합하고 있는 유기기이다.
Y3은, 가수분해성 금속 알콕사이드와 반응할 수 있는 관능기, 또는 당해 반응기를 가지는 탄소수 1 ~ 10의 1가의 유기기이며,
a는 0 ~ 3의 정수이고,
b 및 c는 같거나 다르고, 0 또는 1이다.)
으로 나타내지는 구조 단위로 이루어지는 불소 함유 중합체, 및
(C) 비점이 70℃ 이상이고, 또한 용해도 파라미터가 8.0 ~ 10.0인 용매
를 함유하는 반사 방지막 형성용 조성물. - (A) 가수분해성 금속 알콕사이드 (a) 및/또는 그 가수분해물,
(B') 일반식 (M')
[화학식 2]
[식 중,
X1 및 X2는 같거나 다르고, H 또는 F이며,
X3은 H, F, CH3 또는 CF3이고,
X4 및 X5는 같거나 다르고, H, F 또는 CH3이며,
Rf1은, 탄소수 1 ~ 40의 불소 함유 알킬기 또는 탄소수 2 ~ 100의 에테르 결합을 가지는 불소 함유 알킬기에 Y3이 1 ~ 3개 결합하고 있는 유기기이다.
Y3은, 가수분해성 금속 알콕사이드 (b)와 반응한 관능기, 또는 가수분해성 금속 알콕사이드 (b)와 반응한 반응기를 가지는 탄소수 1 ~ 10의 1가의 유기기이며,
a는 0 ~ 3의 정수이고,
b 및 c는 같거나 다르고, 0 또는 1이다.)
으로 나타내지는 구조 단위를 함유하는 불소 함유 중합체, 및
(C) 비점이 70℃ 이상이고, 또한 용해도 파라미터가 8.0 ~ 10.0인 용매
를 함유하는 반사 방지막 형성용 조성물. - 제1항 또는 제2항에 있어서,
상기 반응기가 히드록시기인 반사 방지막 형성용 조성물. - 제1항 또는 제2항에 있어서,
상기 가수분해성 금속 알콕사이드, 상기 가수분해성 금속 알콕사이드 (a), 및 상기 가수분해성 금속 알콕사이드 (b)가, 각각, 금속으로서 Si를 함유하는 반사 방지막 형성용 조성물. - 제1항 또는 제2항에 기재된 상기 반사 방지막 형성용 조성물을, 반사를 방지하고자 하는 부재에 도포하는 것, 및
상기 도포된 반사 방지막 형성용 조성물로부터 상기 용매를 증발시키는 것
에 의하여 형성되는 반사 방지막.
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