KR20110128722A - 고주파 전극의 접속 방법을 개선한 웨이퍼 유지체 및 그것을 탑재한 반도체 제조 장치 - Google Patents

고주파 전극의 접속 방법을 개선한 웨이퍼 유지체 및 그것을 탑재한 반도체 제조 장치 Download PDF

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KR20110128722A
KR20110128722A KR1020107024455A KR20107024455A KR20110128722A KR 20110128722 A KR20110128722 A KR 20110128722A KR 1020107024455 A KR1020107024455 A KR 1020107024455A KR 20107024455 A KR20107024455 A KR 20107024455A KR 20110128722 A KR20110128722 A KR 20110128722A
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KR
South Korea
Prior art keywords
wafer
component
high frequency
frequency electrode
preferable
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KR1020107024455A
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English (en)
Korean (ko)
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아키라 미쿠모
요시히로 니시모토
고우이치 기무라
히로히코 나카타
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스미토모덴키고교가부시키가이샤
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Publication of KR20110128722A publication Critical patent/KR20110128722A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020107024455A 2009-03-27 2010-03-17 고주파 전극의 접속 방법을 개선한 웨이퍼 유지체 및 그것을 탑재한 반도체 제조 장치 KR20110128722A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009080166A JP2010232532A (ja) 2009-03-27 2009-03-27 高周波電極の接続方法を改善したウエハ保持体及びそれを搭載した半導体製造装置
JPJP-P-2009-080166 2009-03-27

Publications (1)

Publication Number Publication Date
KR20110128722A true KR20110128722A (ko) 2011-11-30

Family

ID=42780829

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107024455A KR20110128722A (ko) 2009-03-27 2010-03-17 고주파 전극의 접속 방법을 개선한 웨이퍼 유지체 및 그것을 탑재한 반도체 제조 장치

Country Status (5)

Country Link
JP (1) JP2010232532A (ja)
KR (1) KR20110128722A (ja)
CN (1) CN102047383A (ja)
TW (1) TWI480972B (ja)
WO (1) WO2010110137A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170041408A (ko) * 2015-10-07 2017-04-17 주식회사 원익아이피에스 기판처리장치
US11990322B2 (en) 2022-08-01 2024-05-21 Mico Ceramics Ltd. Ceramic susceptor

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5891953B2 (ja) * 2012-05-31 2016-03-23 新東工業株式会社 支持部材、加熱プレート支持装置及び加熱装置
US9088085B2 (en) * 2012-09-21 2015-07-21 Novellus Systems, Inc. High temperature electrode connections
US10090183B2 (en) * 2013-04-26 2018-10-02 Kyocera Corporation Sample holder
KR101773749B1 (ko) * 2015-01-20 2017-08-31 엔지케이 인슐레이터 엘티디 샤프트 단부 부착 구조
JP2017216287A (ja) * 2016-05-30 2017-12-07 日本特殊陶業株式会社 基板支持部材及び給電端子
JP7038496B2 (ja) * 2017-07-06 2022-03-18 日本特殊陶業株式会社 半導体製造装置用部品、および、半導体製造装置用部品の製造方法
JP6609735B2 (ja) * 2017-08-28 2019-11-27 株式会社クリエイティブテクノロジー 静電式ワーク保持方法，静電式ワーク保持システム及びワーク保持装置
JP2020092195A (ja) * 2018-12-06 2020-06-11 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN113402281A (zh) * 2021-08-03 2021-09-17 合肥商德应用材料有限公司 发热体及其制备方法和应用
JP2023088622A (ja) * 2021-12-15 2023-06-27 日本碍子株式会社 ウエハ載置台

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0774234A (ja) * 1993-06-28 1995-03-17 Tokyo Electron Ltd 静電チャックの電極構造、この組み立て方法、この組み立て治具及び処理装置
TW556283B (en) * 2000-05-26 2003-10-01 Nisshin Spinning Silicon/graphite composite ring for supporting silicon wafer, and dry etching apparatus equipped with the same
JP3678413B2 (ja) * 2001-05-31 2005-08-03 京セラ株式会社 窒化アルミニウム質焼結体とＦｅ−Ｎｉ−Ｃｏ合金とのロウ付け接合体及びウエハ支持部材
JP2003086519A (ja) * 2001-09-11 2003-03-20 Sumitomo Electric Ind Ltd 被処理物保持体およびその製造方法ならびに処理装置
JP4089820B2 (ja) * 2003-04-02 2008-05-28 日本発条株式会社 静電チャック
WO2006090730A1 (ja) * 2005-02-23 2006-08-31 Kyocera Corporation 接合体とウェハ保持部材及びその取付構造並びにウェハの処理方法
US7354288B2 (en) * 2005-06-03 2008-04-08 Applied Materials, Inc. Substrate support with clamping electrical connector
JP2008270400A (ja) * 2007-04-18 2008-11-06 Sumitomo Electric Ind Ltd 半導体製造装置用ウエハ保持体及びそれを搭載した半導体製造装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170041408A (ko) * 2015-10-07 2017-04-17 주식회사 원익아이피에스 기판처리장치
US11990322B2 (en) 2022-08-01 2024-05-21 Mico Ceramics Ltd. Ceramic susceptor

Also Published As

Publication number Publication date
TW201036103A (en) 2010-10-01
CN102047383A (zh) 2011-05-04
TWI480972B (zh) 2015-04-11
WO2010110137A1 (ja) 2010-09-30
JP2010232532A (ja) 2010-10-14

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