KR20110038133A - 감소된 암전류를 갖는 후방 조명되는 이미지 센서 - Google Patents

감소된 암전류를 갖는 후방 조명되는 이미지 센서 Download PDF

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Publication number
KR20110038133A
KR20110038133A KR1020117003051A KR20117003051A KR20110038133A KR 20110038133 A KR20110038133 A KR 20110038133A KR 1020117003051 A KR1020117003051 A KR 1020117003051A KR 20117003051 A KR20117003051 A KR 20117003051A KR 20110038133 A KR20110038133 A KR 20110038133A
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image sensor
layer
pixel array
seed layer
dopant
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KR1020117003051A
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Korean (ko)
Inventor
프레데릭 티. 브래디
존 피. 맥칼틴
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이스트맨 코닥 캄파니
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020117003051A 2008-07-09 2009-06-25 감소된 암전류를 갖는 후방 조명되는 이미지 센서 Ceased KR20110038133A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/169,723 2008-07-09
US12/169,723 US7915067B2 (en) 2008-07-09 2008-07-09 Backside illuminated image sensor with reduced dark current

Publications (1)

Publication Number Publication Date
KR20110038133A true KR20110038133A (ko) 2011-04-13

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KR1020117003051A Ceased KR20110038133A (ko) 2008-07-09 2009-06-25 감소된 암전류를 갖는 후방 조명되는 이미지 센서

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US (2) US7915067B2 (enExample)
EP (1) EP2304796A1 (enExample)
JP (1) JP2011527827A (enExample)
KR (1) KR20110038133A (enExample)
CN (1) CN102077350A (enExample)
TW (1) TW201010070A (enExample)
WO (1) WO2010005490A1 (enExample)

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US20100006970A1 (en) 2010-01-14
JP2011527827A (ja) 2011-11-04
CN102077350A (zh) 2011-05-25
TW201010070A (en) 2010-03-01
US20110115957A1 (en) 2011-05-19
US7915067B2 (en) 2011-03-29
EP2304796A1 (en) 2011-04-06
WO2010005490A1 (en) 2010-01-14

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