KR20100132351A - 이축연신 폴리에스터 필름 및 이의 제조방법 - Google Patents
이축연신 폴리에스터 필름 및 이의 제조방법 Download PDFInfo
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- KR20100132351A KR20100132351A KR1020090051135A KR20090051135A KR20100132351A KR 20100132351 A KR20100132351 A KR 20100132351A KR 1020090051135 A KR1020090051135 A KR 1020090051135A KR 20090051135 A KR20090051135 A KR 20090051135A KR 20100132351 A KR20100132351 A KR 20100132351A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Abstract
Description
Claims (11)
- 트리메틸렌나프탈레이트 반복단위 및 트리메틸렌테레프탈레이트 반복단위 중 1종 이상의 반복 단위를 총 85 중량% 이상 함유하는 폴리에스터로 이루어진, 태양전지용 배면시트.
- 제1항에 있어서,상기 태양전지용 배면시트는, 2 기압하에서 120 ℃의 온도로 75 시간 동안 열수처리한 후에 측정한 종방향(MD) 및 횡방향(TD)의 신도 유지율이 모두 80 % 이상인 것을 특징으로 하는, 태양전지용 배면시트.
- 제1항에 있어서,상기 태양전지용 배면시트는, UV 안정제 및 UV 흡수제 중 1종 이상을 총 0.01 내지 1.0 중량%로 포함하는 것을 특징으로 하는, 태양전지용 배면시트.
- 제3항에 있어서,상기 UV 안정제는 벤조트리아졸계 화합물 또는 할스계(HALS) 화합물이며, 상기 UV흡수제는 하이드록시벤조페논 또는 하이드록시페닐벤조트리아졸인 것을 특징으로 하는, 태양전지용 배면시트.
- 제1항에 있어서,상기 태양전지용 배면시트는, 무기입자를 0.01 내지 15 중량%로 포함하는 것을 특징으로 하는, 태양전지용 배면시트.
- 제1항에 있어서,상기 태양전지용 배면시트는, 트리메틸렌나프탈레이트 반복단위 및 트리메틸렌테레프탈레이트 반복단위 중 1종 이상의 반복 단위를 총 85 중량% 이상 함유하는 폴리에스터 수지를 수분함량이 50 ppm 이하가 되도록 건조한 후에 용융압출하는 과정을 포함하여 제조되는 것을 특징으로 하는, 태양전지용 배면시트.
- 제1항에 있어서,상기 폴리에스터 수지는,이소프탈산(IPA), 석신산(succinic acid), 글루타르산(glutaric acid), 아디프산(adipic acid), 슈베린산(suberic acid), 아젤라인산(azelaic acid), 세바신산(sebacic acid) 및 이들의 에스터 유도체로 이루어진 군으로부터 선택되는 1종 이상의 2가 산 성분; 및에틸렌글리콜(EG), 디에틸렌글리콜(DEG), 네오펜틸글리콜(NPG), 프로필렌글리콜(PG), 1,4-부탄디올(1,4-BDO), 펜탄디올, 핵산디올, 2,2-부틸에틸-1,3-프로판디올(BEPD), 2-메틸-1,3-프로판디올(MPDiol) 및 1,4-사이클로헥산디메탄올(1,4- CHDM)로 이루어진 군으로부터 선택되는 1종 이상의 디올 성분으로부터 중합되는 1종 이상의 반복단위를, 총 폴리에스터 수지 중량 대비 15 중량% 이하로 더 포함하는 것을 특징으로 하는, 태양전지용 배면시트.
- a) 트리메틸렌테레프탈레이트 반복단위 및 트리메틸렌나프탈레이트 반복단위 중 1종 이상의 반복단위를 총 85 중량% 이상 함유시킨 폴리에스터 수지를 용융압출 및 급냉 고화하여 미연신 시트를 얻는 단계;b) 상기 미연신 시트를 종방향 및 횡방향으로 연신 후 이완한 다음 열고정하여 연신 시트를 얻는 단계; 및c) 상기 연신 시트를 냉각하는 단계를 포함하는, 태양전지용 배면시트의 제조방법.
- 제8항에 있어서,상기 트리메틸렌테레프탈레이트 반복단위는, 디올 성분으로서 1,3-프로판디올과 2가 산 성분으로서 테레프탈산 혹은 이의 유도체로부터 중합된 것이며, 상기 트리메틸렌나프탈레이트 반복단위는 디올 성분으로서 1,3-프로판디올과 2가 산 성분으로서 나프탈렌디카복실산 또는 이의 유도체로부터 중합된 것을 특징으로 하는, 태양전지용 배면시트의 제조방법.
- 제8항에 있어서,상기 단계 a)에서, 상기 용융압출 공정 전에 폴리에스터 수지 중의 수분함량이 50 ppm 이하가 되도록 건조한 후에 용융압출을 하는 것을 특징으로 하는, 태양전지용 배면시트의 제조방법.
- 제8항에 있어서,상기 단계 c)에서 얻은 최종 시트는, 일면에 에틸렌비닐아세테이트를 접합하고 반대면에 불소수지 필름을 접합하는 공정을 추가로 거치는 것을 특징으로 하는, 태양전지용 배면시트의 제조방법.
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PCT/KR2010/003693 WO2010143882A2 (en) | 2009-06-09 | 2010-06-09 | Biaxially oriented polyester film and preparation method thereof |
US13/376,931 US20120082785A1 (en) | 2009-06-09 | 2010-06-09 | Biaxially oriented polyester film and preparation method thereof |
JP2012514883A JP5947209B2 (ja) | 2009-06-09 | 2010-06-09 | 黒色シート及びその製造方法 |
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