KR20100108283A - 성막 장치 및 성막 방법, 그리고 조명 장치의 제작 방법 - Google Patents
성막 장치 및 성막 방법, 그리고 조명 장치의 제작 방법 Download PDFInfo
- Publication number
- KR20100108283A KR20100108283A KR1020100027140A KR20100027140A KR20100108283A KR 20100108283 A KR20100108283 A KR 20100108283A KR 1020100027140 A KR1020100027140 A KR 1020100027140A KR 20100027140 A KR20100027140 A KR 20100027140A KR 20100108283 A KR20100108283 A KR 20100108283A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- film
- evaporation source
- film formation
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/003—Arrangement of electric circuit elements in or on lighting devices the elements being electronics drivers or controllers for operating the light source, e.g. for a LED array
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
- F21Y2115/15—Organic light-emitting diodes [OLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/19—Tandem OLEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009080199 | 2009-03-27 | ||
| JPJP-P-2009-080199 | 2009-03-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20100108283A true KR20100108283A (ko) | 2010-10-06 |
Family
ID=42784563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100027140A Ceased KR20100108283A (ko) | 2009-03-27 | 2010-03-26 | 성막 장치 및 성막 방법, 그리고 조명 장치의 제작 방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20100247747A1 (enExample) |
| JP (1) | JP5417236B2 (enExample) |
| KR (1) | KR20100108283A (enExample) |
| TW (1) | TWI532861B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024101670A1 (ko) * | 2022-11-11 | 2024-05-16 | 주식회사 야스 | 증착 시스템 |
| US20250250682A1 (en) * | 2024-02-06 | 2025-08-07 | Thin Film Service, Inc. | Systems and Methods for Depositing Alternating Layers for a Diamond-Like Coating |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5715802B2 (ja) * | 2010-11-19 | 2015-05-13 | 株式会社半導体エネルギー研究所 | 成膜装置 |
| JP5852855B2 (ja) * | 2010-11-24 | 2016-02-03 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、照明装置、及び電子機器 |
| KR101218346B1 (ko) * | 2011-02-09 | 2013-01-21 | 서울대학교산학협력단 | 벌크 이종접합을 갖는 저분자 박막 및 이를 포함하는 유기 태양전지의 형성방법 |
| KR20140004761A (ko) * | 2011-03-18 | 2014-01-13 | 도쿄엘렉트론가부시키가이샤 | 성막 장치, 성막 방법, 유기 발광 소자의 제조 방법 및 유기 발광 소자 |
| CN103871851B (zh) * | 2012-12-18 | 2017-12-19 | 北京创昱科技有限公司 | 一种铜铟镓硒薄膜电池共蒸发线性源阵列的排布 |
| CN103305794B (zh) * | 2013-06-09 | 2016-03-02 | 京东方科技集团股份有限公司 | 一种有机镀膜装置及方法 |
| US9209422B2 (en) * | 2013-12-31 | 2015-12-08 | Lg Display Co., Ltd. | Organic light emitting display device with micro-cavity structure |
| JP6627620B2 (ja) * | 2016-04-05 | 2020-01-08 | 株式会社オートネットワーク技術研究所 | コネクタ、接続状態検知システム、および、端子 |
| KR102353663B1 (ko) | 2016-05-20 | 2022-01-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 발광 장치, 전자 기기, 및 조명 장치 |
| KR20180002505A (ko) | 2016-06-29 | 2018-01-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자의 제작 방법 |
| US20180010239A1 (en) | 2016-07-06 | 2018-01-11 | United Technologies Corporation | Vapor deposition apparatus and method |
| CN107799658B (zh) | 2016-08-29 | 2021-05-28 | 株式会社半导体能源研究所 | 发光元件、发光装置、电子设备、照明装置及有机金属配合物 |
| WO2018184949A1 (en) * | 2017-04-07 | 2018-10-11 | Applied Materials, Inc. | Method for cleaning a vacuum chamber, apparatus for vacuum processing of a substrate, and system for the manufacture of devices having organic materials |
| CN108728801B (zh) * | 2018-05-28 | 2019-11-12 | 深圳市华星光电技术有限公司 | 蒸镀装置及蒸镀方法 |
| GB2574401B (en) * | 2018-06-04 | 2022-11-23 | Dyson Technology Ltd | A Device |
| GB2574400B (en) | 2018-06-04 | 2022-11-23 | Dyson Technology Ltd | A Device |
| EP3803960B1 (en) * | 2018-06-07 | 2023-11-08 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
| US20240042482A1 (en) * | 2022-08-04 | 2024-02-08 | Emagin Corporation | Evaporation system having improved collimation |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US4681773A (en) * | 1981-03-27 | 1987-07-21 | American Telephone And Telegraph Company At&T Bell Laboratories | Apparatus for simultaneous molecular beam deposition on a plurality of substrates |
| JPS63274756A (ja) * | 1987-04-28 | 1988-11-11 | Toda Kogyo Corp | 真空蒸着多層薄膜形成装置 |
| FR2733253B1 (fr) * | 1995-04-24 | 1997-06-13 | Commissariat Energie Atomique | Dispositif pour deposer un materiau par evaporation sur des substrats de grande surface |
| GB9515929D0 (en) * | 1995-08-03 | 1995-10-04 | Fisons Plc | Sources used in molecular beam epitaxy |
| CH692000A5 (de) * | 1995-11-13 | 2001-12-31 | Unaxis Balzers Ag | Beschichtungskammer, Substratträger hierfür, Verfahren zum Vakuumbedampfen sowie Beschichtungsverfahren. |
| TW387152B (en) * | 1996-07-24 | 2000-04-11 | Tdk Corp | Solar battery and manufacturing method thereof |
| US6053981A (en) * | 1998-09-15 | 2000-04-25 | Coherent, Inc. | Effusion cell and method of use in molecular beam epitaxy |
| JP4469430B2 (ja) * | 1998-11-30 | 2010-05-26 | 株式会社アルバック | 蒸着装置 |
| JP2001209981A (ja) * | 1999-02-09 | 2001-08-03 | Ricoh Co Ltd | 光ディスク基板成膜装置、光ディスク基板成膜方法、基板ホルダーの製造方法、基板ホルダー、光ディスクおよび相変化記録型光ディスク |
| JP2001081558A (ja) * | 1999-09-13 | 2001-03-27 | Asahi Optical Co Ltd | 成膜装置および成膜方法 |
| US6082296A (en) * | 1999-09-22 | 2000-07-04 | Xerox Corporation | Thin film deposition chamber |
| JP4268303B2 (ja) * | 2000-02-01 | 2009-05-27 | キヤノンアネルバ株式会社 | インライン型基板処理装置 |
| US20020069970A1 (en) * | 2000-03-07 | 2002-06-13 | Applied Materials, Inc. | Temperature controlled semiconductor processing chamber liner |
| US20020011205A1 (en) * | 2000-05-02 | 2002-01-31 | Shunpei Yamazaki | Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device |
| EP1167566B1 (en) * | 2000-06-22 | 2011-01-26 | Panasonic Electric Works Co., Ltd. | Apparatus for and method of vacuum vapor deposition |
| JP2002071944A (ja) * | 2000-08-24 | 2002-03-12 | Toyo Commun Equip Co Ltd | 光バンドパスフィルタの製造装置及び製造方法 |
| JP2003193217A (ja) * | 2001-12-25 | 2003-07-09 | Nippon Seiki Co Ltd | 蒸着装置 |
| KR100467805B1 (ko) * | 2002-01-22 | 2005-01-24 | 학교법인연세대학교 | 박막두께분포를 조절 가능한 선형 및 평면형 증발원 |
| US6565231B1 (en) * | 2002-05-28 | 2003-05-20 | Eastman Kodak Company | OLED area illumination lighting apparatus |
| US6787990B2 (en) * | 2002-05-28 | 2004-09-07 | Eastman Kodak Company | OLED area illumination light source having flexible substrate on a support |
| US6771021B2 (en) * | 2002-05-28 | 2004-08-03 | Eastman Kodak Company | Lighting apparatus with flexible OLED area illumination light source and fixture |
| TWI277363B (en) * | 2002-08-30 | 2007-03-21 | Semiconductor Energy Lab | Fabrication system, light-emitting device and fabricating method of organic compound-containing layer |
| KR100889758B1 (ko) * | 2002-09-03 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 유기박막 형성장치의 가열용기 |
| DE10316228B3 (de) * | 2003-04-09 | 2004-12-16 | Dr. Eberl Mbe-Komponenten Gmbh | Effusionszelle mit verbesserter Temperaturkontrolle des Tiegels |
| US7339139B2 (en) * | 2003-10-03 | 2008-03-04 | Darly Custom Technology, Inc. | Multi-layered radiant thermal evaporator and method of use |
| US7439208B2 (en) * | 2003-12-01 | 2008-10-21 | Superconductor Technologies, Inc. | Growth of in-situ thin films by reactive evaporation |
| US20050229856A1 (en) * | 2004-04-20 | 2005-10-20 | Malik Roger J | Means and method for a liquid metal evaporation source with integral level sensor and external reservoir |
| JP4653418B2 (ja) * | 2004-05-17 | 2011-03-16 | 芝浦メカトロニクス株式会社 | 真空処理装置および光ディスクの製造方法 |
| JP4027914B2 (ja) * | 2004-05-21 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 照明装置及びそれを用いた機器 |
| JP2006002200A (ja) * | 2004-06-16 | 2006-01-05 | Seiko Epson Corp | 蒸着装置、蒸着方法、有機el装置、および電子機器 |
| US7667389B2 (en) * | 2004-12-06 | 2010-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device, and electronic device |
| US20060244373A1 (en) * | 2005-04-28 | 2006-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for manufacturing thereof |
| JP2008108611A (ja) * | 2006-10-26 | 2008-05-08 | Fuji Electric Holdings Co Ltd | 蒸着層の製造方法および製造装置 |
| JP4293314B2 (ja) * | 2007-01-26 | 2009-07-08 | 財団法人山形県産業技術振興機構 | 照明装置 |
| US8444926B2 (en) * | 2007-01-30 | 2013-05-21 | Applied Materials, Inc. | Processing chamber with heated chamber liner |
| US20090020070A1 (en) * | 2007-07-19 | 2009-01-22 | Michael Schafer | Vacuum evaporation apparatus for solid materials |
-
2010
- 2010-03-23 US US12/729,881 patent/US20100247747A1/en not_active Abandoned
- 2010-03-24 TW TW099108714A patent/TWI532861B/zh not_active IP Right Cessation
- 2010-03-26 KR KR1020100027140A patent/KR20100108283A/ko not_active Ceased
- 2010-03-26 JP JP2010071754A patent/JP5417236B2/ja not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024101670A1 (ko) * | 2022-11-11 | 2024-05-16 | 주식회사 야스 | 증착 시스템 |
| US20250250682A1 (en) * | 2024-02-06 | 2025-08-07 | Thin Film Service, Inc. | Systems and Methods for Depositing Alternating Layers for a Diamond-Like Coating |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5417236B2 (ja) | 2014-02-12 |
| US20100247747A1 (en) | 2010-09-30 |
| JP2010248629A (ja) | 2010-11-04 |
| TW201102447A (en) | 2011-01-16 |
| TWI532861B (zh) | 2016-05-11 |
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