KR20100108283A - 성막 장치 및 성막 방법, 그리고 조명 장치의 제작 방법 - Google Patents

성막 장치 및 성막 방법, 그리고 조명 장치의 제작 방법 Download PDF

Info

Publication number
KR20100108283A
KR20100108283A KR1020100027140A KR20100027140A KR20100108283A KR 20100108283 A KR20100108283 A KR 20100108283A KR 1020100027140 A KR1020100027140 A KR 1020100027140A KR 20100027140 A KR20100027140 A KR 20100027140A KR 20100108283 A KR20100108283 A KR 20100108283A
Authority
KR
South Korea
Prior art keywords
substrate
film
evaporation source
film formation
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020100027140A
Other languages
English (en)
Korean (ko)
Inventor
순페이 야마자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20100108283A publication Critical patent/KR20100108283A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/246Replenishment of source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/26Vacuum evaporation by resistance or inductive heating of the source
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • C23C14/505Substrate holders for rotation of the substrates
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20Light sources comprising attachment means
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20Light sources comprising attachment means
    • F21K9/23Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00Arrangement of electric circuit elements in or on lighting devices
    • F21V23/003Arrangement of electric circuit elements in or on lighting devices the elements being electronics drivers or controllers for operating the light source, e.g. for a LED array
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00Planar light sources
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
    • F21Y2115/15Organic light-emitting diodes [OLED]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19Tandem OLEDs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/32Stacked devices having two or more layers, each emitting at different wavelengths

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
KR1020100027140A 2009-03-27 2010-03-26 성막 장치 및 성막 방법, 그리고 조명 장치의 제작 방법 Ceased KR20100108283A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009080199 2009-03-27
JPJP-P-2009-080199 2009-03-27

Publications (1)

Publication Number Publication Date
KR20100108283A true KR20100108283A (ko) 2010-10-06

Family

ID=42784563

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100027140A Ceased KR20100108283A (ko) 2009-03-27 2010-03-26 성막 장치 및 성막 방법, 그리고 조명 장치의 제작 방법

Country Status (4)

Country Link
US (1) US20100247747A1 (enExample)
JP (1) JP5417236B2 (enExample)
KR (1) KR20100108283A (enExample)
TW (1) TWI532861B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024101670A1 (ko) * 2022-11-11 2024-05-16 주식회사 야스 증착 시스템
US20250250682A1 (en) * 2024-02-06 2025-08-07 Thin Film Service, Inc. Systems and Methods for Depositing Alternating Layers for a Diamond-Like Coating

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5715802B2 (ja) * 2010-11-19 2015-05-13 株式会社半導体エネルギー研究所 成膜装置
JP5852855B2 (ja) * 2010-11-24 2016-02-03 株式会社半導体エネルギー研究所 発光素子、発光装置、照明装置、及び電子機器
KR101218346B1 (ko) * 2011-02-09 2013-01-21 서울대학교산학협력단 벌크 이종접합을 갖는 저분자 박막 및 이를 포함하는 유기 태양전지의 형성방법
KR20140004761A (ko) * 2011-03-18 2014-01-13 도쿄엘렉트론가부시키가이샤 성막 장치, 성막 방법, 유기 발광 소자의 제조 방법 및 유기 발광 소자
CN103871851B (zh) * 2012-12-18 2017-12-19 北京创昱科技有限公司 一种铜铟镓硒薄膜电池共蒸发线性源阵列的排布
CN103305794B (zh) * 2013-06-09 2016-03-02 京东方科技集团股份有限公司 一种有机镀膜装置及方法
US9209422B2 (en) * 2013-12-31 2015-12-08 Lg Display Co., Ltd. Organic light emitting display device with micro-cavity structure
JP6627620B2 (ja) * 2016-04-05 2020-01-08 株式会社オートネットワーク技術研究所 コネクタ、接続状態検知システム、および、端子
KR102353663B1 (ko) 2016-05-20 2022-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
KR20180002505A (ko) 2016-06-29 2018-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자의 제작 방법
US20180010239A1 (en) 2016-07-06 2018-01-11 United Technologies Corporation Vapor deposition apparatus and method
CN107799658B (zh) 2016-08-29 2021-05-28 株式会社半导体能源研究所 发光元件、发光装置、电子设备、照明装置及有机金属配合物
WO2018184949A1 (en) * 2017-04-07 2018-10-11 Applied Materials, Inc. Method for cleaning a vacuum chamber, apparatus for vacuum processing of a substrate, and system for the manufacture of devices having organic materials
CN108728801B (zh) * 2018-05-28 2019-11-12 深圳市华星光电技术有限公司 蒸镀装置及蒸镀方法
GB2574401B (en) * 2018-06-04 2022-11-23 Dyson Technology Ltd A Device
GB2574400B (en) 2018-06-04 2022-11-23 Dyson Technology Ltd A Device
EP3803960B1 (en) * 2018-06-07 2023-11-08 Silanna UV Technologies Pte Ltd Optoelectronic device
US20240042482A1 (en) * 2022-08-04 2024-02-08 Emagin Corporation Evaporation system having improved collimation

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4681773A (en) * 1981-03-27 1987-07-21 American Telephone And Telegraph Company At&T Bell Laboratories Apparatus for simultaneous molecular beam deposition on a plurality of substrates
JPS63274756A (ja) * 1987-04-28 1988-11-11 Toda Kogyo Corp 真空蒸着多層薄膜形成装置
FR2733253B1 (fr) * 1995-04-24 1997-06-13 Commissariat Energie Atomique Dispositif pour deposer un materiau par evaporation sur des substrats de grande surface
GB9515929D0 (en) * 1995-08-03 1995-10-04 Fisons Plc Sources used in molecular beam epitaxy
CH692000A5 (de) * 1995-11-13 2001-12-31 Unaxis Balzers Ag Beschichtungskammer, Substratträger hierfür, Verfahren zum Vakuumbedampfen sowie Beschichtungsverfahren.
TW387152B (en) * 1996-07-24 2000-04-11 Tdk Corp Solar battery and manufacturing method thereof
US6053981A (en) * 1998-09-15 2000-04-25 Coherent, Inc. Effusion cell and method of use in molecular beam epitaxy
JP4469430B2 (ja) * 1998-11-30 2010-05-26 株式会社アルバック 蒸着装置
JP2001209981A (ja) * 1999-02-09 2001-08-03 Ricoh Co Ltd 光ディスク基板成膜装置、光ディスク基板成膜方法、基板ホルダーの製造方法、基板ホルダー、光ディスクおよび相変化記録型光ディスク
JP2001081558A (ja) * 1999-09-13 2001-03-27 Asahi Optical Co Ltd 成膜装置および成膜方法
US6082296A (en) * 1999-09-22 2000-07-04 Xerox Corporation Thin film deposition chamber
JP4268303B2 (ja) * 2000-02-01 2009-05-27 キヤノンアネルバ株式会社 インライン型基板処理装置
US20020069970A1 (en) * 2000-03-07 2002-06-13 Applied Materials, Inc. Temperature controlled semiconductor processing chamber liner
US20020011205A1 (en) * 2000-05-02 2002-01-31 Shunpei Yamazaki Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device
EP1167566B1 (en) * 2000-06-22 2011-01-26 Panasonic Electric Works Co., Ltd. Apparatus for and method of vacuum vapor deposition
JP2002071944A (ja) * 2000-08-24 2002-03-12 Toyo Commun Equip Co Ltd 光バンドパスフィルタの製造装置及び製造方法
JP2003193217A (ja) * 2001-12-25 2003-07-09 Nippon Seiki Co Ltd 蒸着装置
KR100467805B1 (ko) * 2002-01-22 2005-01-24 학교법인연세대학교 박막두께분포를 조절 가능한 선형 및 평면형 증발원
US6565231B1 (en) * 2002-05-28 2003-05-20 Eastman Kodak Company OLED area illumination lighting apparatus
US6787990B2 (en) * 2002-05-28 2004-09-07 Eastman Kodak Company OLED area illumination light source having flexible substrate on a support
US6771021B2 (en) * 2002-05-28 2004-08-03 Eastman Kodak Company Lighting apparatus with flexible OLED area illumination light source and fixture
TWI277363B (en) * 2002-08-30 2007-03-21 Semiconductor Energy Lab Fabrication system, light-emitting device and fabricating method of organic compound-containing layer
KR100889758B1 (ko) * 2002-09-03 2009-03-20 삼성모바일디스플레이주식회사 유기박막 형성장치의 가열용기
DE10316228B3 (de) * 2003-04-09 2004-12-16 Dr. Eberl Mbe-Komponenten Gmbh Effusionszelle mit verbesserter Temperaturkontrolle des Tiegels
US7339139B2 (en) * 2003-10-03 2008-03-04 Darly Custom Technology, Inc. Multi-layered radiant thermal evaporator and method of use
US7439208B2 (en) * 2003-12-01 2008-10-21 Superconductor Technologies, Inc. Growth of in-situ thin films by reactive evaporation
US20050229856A1 (en) * 2004-04-20 2005-10-20 Malik Roger J Means and method for a liquid metal evaporation source with integral level sensor and external reservoir
JP4653418B2 (ja) * 2004-05-17 2011-03-16 芝浦メカトロニクス株式会社 真空処理装置および光ディスクの製造方法
JP4027914B2 (ja) * 2004-05-21 2007-12-26 株式会社半導体エネルギー研究所 照明装置及びそれを用いた機器
JP2006002200A (ja) * 2004-06-16 2006-01-05 Seiko Epson Corp 蒸着装置、蒸着方法、有機el装置、および電子機器
US7667389B2 (en) * 2004-12-06 2010-02-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
US20060244373A1 (en) * 2005-04-28 2006-11-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for manufacturing thereof
JP2008108611A (ja) * 2006-10-26 2008-05-08 Fuji Electric Holdings Co Ltd 蒸着層の製造方法および製造装置
JP4293314B2 (ja) * 2007-01-26 2009-07-08 財団法人山形県産業技術振興機構 照明装置
US8444926B2 (en) * 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
US20090020070A1 (en) * 2007-07-19 2009-01-22 Michael Schafer Vacuum evaporation apparatus for solid materials

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024101670A1 (ko) * 2022-11-11 2024-05-16 주식회사 야스 증착 시스템
US20250250682A1 (en) * 2024-02-06 2025-08-07 Thin Film Service, Inc. Systems and Methods for Depositing Alternating Layers for a Diamond-Like Coating

Also Published As

Publication number Publication date
JP5417236B2 (ja) 2014-02-12
US20100247747A1 (en) 2010-09-30
JP2010248629A (ja) 2010-11-04
TW201102447A (en) 2011-01-16
TWI532861B (zh) 2016-05-11

Similar Documents

Publication Publication Date Title
KR20100108283A (ko) 성막 장치 및 성막 방법, 그리고 조명 장치의 제작 방법
JP4455937B2 (ja) 成膜源、真空成膜装置、有機elパネルの製造方法
KR101707165B1 (ko) 조명 장치 제조 장치 및 제조 방법
KR101457653B1 (ko) 성막장치, 제조장치, 성막방법, 및 발광장치의 제조방법
JP4881789B2 (ja) 有機エレクトロルミネッセンス素子の製造方法及び有機エレクトロルミネッセンス素子の製造装置
CN101390450A (zh) 成膜装置和发光元件的制作方法
KR102121087B1 (ko) Oled 조명 장치를 제조하기 위한 장비 및 제조 방법
JP5325471B2 (ja) 発光装置の作製方法
TW200844246A (en) Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device
JP2006057173A (ja) 成膜源、真空成膜装置、有機elパネルの製造方法
US9685638B2 (en) Method for producing a component
KR20090093914A (ko) 제조 시스템 및 발광장치의 제조방법
US8492973B2 (en) Organic optoelectronic component having a radiation-emitting layer containing an organic material
CN103476962B (zh) 蒸镀颗粒射出装置、蒸镀颗粒射出方法和蒸镀装置
US9290842B2 (en) Electrode cover and evaporation device
US20100175989A1 (en) Deposition apparatus, deposition system and deposition method
JP2012046814A (ja) 蒸着装置
US20090246941A1 (en) Deposition apparatus, deposition system and deposition method
JP4846650B2 (ja) 電極カバーおよび蒸着装置
JP5715802B2 (ja) 成膜装置
JP2011228228A (ja) 有機エレクトロルミネッセンス装置の製造装置及び製造方法
JPWO2005122646A1 (ja) 線状発光体、線状発光装置及び線状発光体の製造方法
CN108123012B (zh) 用于制造照明装置的设备和方法
JP2006244906A (ja) 自発光素子の製造方法及び製造装置
JP2006002218A (ja) 成膜源、成膜方法、および加熱板、ならびに有機el素子の製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20100326

PG1501 Laying open of application
A201 Request for examination
AMND Amendment
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20150326

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20100326

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20160321

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20160920

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20160321

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20160920

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20160520

Comment text: Amendment to Specification, etc.

Patent event code: PX09012R01I

Patent event date: 20150326

Comment text: Amendment to Specification, etc.

PX0601 Decision of rejection after re-examination

Comment text: Decision to Refuse Application

Patent event code: PX06014S01D

Patent event date: 20161114

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20161020

Comment text: Decision to Refuse Application

Patent event code: PX06011S01I

Patent event date: 20160920

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20160520

Comment text: Notification of reason for refusal

Patent event code: PX06013S01I

Patent event date: 20160321

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20150326