US20180010239A1 - Vapor deposition apparatus and method - Google Patents
Vapor deposition apparatus and method Download PDFInfo
- Publication number
- US20180010239A1 US20180010239A1 US15/202,984 US201615202984A US2018010239A1 US 20180010239 A1 US20180010239 A1 US 20180010239A1 US 201615202984 A US201615202984 A US 201615202984A US 2018010239 A1 US2018010239 A1 US 2018010239A1
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- US
- United States
- Prior art keywords
- heater
- ingot
- crucible
- hot zone
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
Definitions
- Source material is typically fed into a crucible, which is held at vacuum inside a processing chamber. This source material can be a ceramic ingot.
- a vapor deposition apparatus includes a chamber configured to operate at vacuum and at least one crucible in the chamber.
- the crucible is configured to receive an ingot, a feeder operable to move the ingot with respect to the at least one crucible, and a heater in the chamber and configured to heat a hot zone between the at least one crucible and the feeder.
- the feeder includes a drive mechanism and a mechanical guide mechanism or guide rods.
- the heater is between the mechanical guide mechanism or guide rods and the crucible.
- the heater is fixed to the crucible.
- the heater is an induction heater.
- the heater is a microwave heater.
- the heater is a resistance heater.
- the heater is selected from a group consisting of an induction heater, a microwave heater, and a resistance heater.
- the heater circumscribes the hot zone.
- the heater is operable to heat the hot zone above the vaporization temperature of water across a typical range of thermal emission physical vapor deposition (TE-PVD) process pressures.
- TE-PVD thermal emission physical vapor deposition
- a further embodiment of any of the foregoing embodiments includes heat shields defining the hot zone.
- a method for vapor deposition according to an example of the present disclosure includes driving off moisture from an ingot in a vapor deposition chamber prior to the ingot entering a crucible, and providing the ingot to the crucible for vapor deposition.
- a further embodiment of any of the foregoing embodiments includes feeding the ingot through a hot zone and into the crucible.
- the hot zone is defined between an ingot feeder and the crucible.
- the moisture is driven off as the ingot is fed through the hot zone.
- heat is retained by providing heat shields.
- a further embodiment of any of the foregoing embodiments includes heating the hot zone with a heater that is in the chamber.
- the heater is selected from a group consisting of an induction heater, a microwave heater, and a resistance heater.
- the ingot is heated to a temperature above the vaporization temperature of water.
- the heater circumscribes the ingot.
- FIG. 1A illustrates a process chamber
- FIG. 2 illustrates an induction heater for the process chamber of FIG. 1 .
- FIG. 3 illustrates an example microwave heater for the process chamber of FIG. 1 .
- FIG. 4 illustrates a resistance heater for the process chamber of FIG. 1 .
- FIG. 5 illustrates a vapor deposition method
- Thermal emission physical vapor deposition processes such as electron beam physical vapor deposition (EB-PVD) and electron beam directed vapor deposition (EB-DVD) are used to deposit coatings.
- TE-PVD electron beam physical vapor deposition
- EB-PVD electron beam physical vapor deposition
- EB-DVD electron beam directed vapor deposition
- Such processes can be used to deposit ceramic coatings, for example.
- an energy source such an electron gun heats, melts, and vaporizes a source ingot, such as a ceramic material. The vapor condenses and deposits on an article in a vapor field, usually above the ingot.
- a gas stream either inert or reactive
- Such processes are typically performed under vacuum and at high heat.
- FIGS. 1A-1B illustrate a vapor deposition apparatus 10 .
- the vapor deposition apparatus 10 includes a process chamber 12 that is configured to operate at vacuum and at high temperatures.
- the process chamber 12 can be connected in a known manner to gas sources and a vacuum pump system, etc., not described herein.
- the process chamber 12 includes at least once crucible 14 , a feeder 16 , and a heater 18 between the crucible 14 and the feeder 16 .
- the process chamber 12 includes a single crucible 14 .
- the process chamber 12 may include multiple crucibles 14 .
- the process chamber 12 also includes at least one energy source 17 .
- the energy source 17 is an electron gun.
- the article 20 is a component for a gas turbine engine, such as an airfoil.
- the feeder 16 has a drive mechanism 22 that provides the ingot material 28 , such as ceramic, to the crucible 14 via an aperture 24 .
- the feeder 16 also has a mechanical guide mechanism or guide-rods 26 to guide the ingot 28 into the aperture 24 .
- the ingot 28 can be provided in the form of a cylinder, but is not limited to such a geometry.
- the feeder 16 advances the ingot 28 into the crucible 14 at a predetermined rate. In one example, the rate is 2 mm per minute (0.08 inches per minute).
- the energy source 17 melts and vaporizes the top of the ingot 28 as it is delivered into the crucible 14 .
- the heater 18 is operable to heat the hot zone 30 across a typical range of TE-PVD process pressures.
- the heater 18 is fixed to the crucible 14 by fasteners 32 and is arranged on top of the guide mechanical guide mechanism or rods 26 .
- the crucible 14 may move throughout the vapor deposition process. In this example, the heater 18 would move with the crucible 14 .
- the ingot 28 passes adjacent the heater 18 as it advances through the hot zone 30 and the aperture 24 into the crucible 14 .
- each crucible 14 has a heater 18 fixed to it. Because the heater 18 is adjacent the crucible 14 and is inside the process chamber 12 , there is no need for the ingot 28 to be separately heated outside the process chamber 12 , and then inserted into the process chamber 12 , minimizing the risk of burns or other injury to the operator.
- the heater 18 heats the ingot 28 such that substantially all of the water in the ingot 28 is evaporated off. In one example, the heater 18 heats the ingot 28 to a temperature of above about 350° F. (177° C.). In a further example, the heater 18 heats the ingot 28 to a temperature between about 350° F. (177° C.) and 400° F. (204° C.).
- the heater 18 transfers heat to a ‘moist’ ingot 28 , which causes any water in the ingot 28 to evaporate. Ingot 28 drying can occur at ambient pressure, or at vacuum while a vacuum is being applied to the process chamber 12 .
- Shields 34 such as lightweight metal or composite shields, can be used to surround the hot zone and concentrate heat on the ingot 28 .
- the heater 18 is an induction heater 180 .
- the induction heater 180 includes a coil 182 , such as a water-cooled high-frequency coil, that circumscribes the ingot 28 .
- the coil 182 can have a frequency that corresponds to the density and shape of the ingot 28 .
- the induction heater 180 also includes a power source 184 .
- An induction heater 180 allows for very concentrated and quick heating of the ingot 28 .
- the heater 18 is a microwave heater 280 .
- the microwave heater 280 includes a microwave output antenna 282 , water line connections 284 for providing cooling water to the heater 280 , a power input 286 , and a power source 288 .
- Microwave energy from the antenna 282 is absorbed by water in the ingot 28 as it passes by the microwave heater 280 . This process is called dielectric heating.
- the heater 18 is a resistance heater 380 connected to a power source 382 .
- the ingot 28 is substantially freed of water as it travels through the hot zone 30 before entering the crucible 14 , the risks of cracking or fracture, delayed drying, process contamination, ‘spitting’ of molten ceramic, or the like, are reduced.
- FIG. 5 shows a method for vapor deposition 500 .
- an ingot 28 is heated.
- vacuum is applied to a crucible 14 .
- the ingot 28 is provided to the crucible 14 after the crucible 14 reaches vacuum.
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
- Certain ceramic processing occurs under vacuum, such as physical vapor deposition (PVD) or directed vapor deposition (DVD). Source material is typically fed into a crucible, which is held at vacuum inside a processing chamber. This source material can be a ceramic ingot.
- A vapor deposition apparatus according to an example of the present disclosure includes a chamber configured to operate at vacuum and at least one crucible in the chamber. The crucible is configured to receive an ingot, a feeder operable to move the ingot with respect to the at least one crucible, and a heater in the chamber and configured to heat a hot zone between the at least one crucible and the feeder.
- In a further embodiment of any of the foregoing embodiments, the feeder includes a drive mechanism and a mechanical guide mechanism or guide rods.
- In a further embodiment of any of the foregoing embodiments, the heater is between the mechanical guide mechanism or guide rods and the crucible.
- In a further embodiment of any of the foregoing embodiments, the heater is fixed to the crucible.
- In a further embodiment of any of the foregoing embodiments, the heater is an induction heater.
- In a further embodiment of any of the foregoing embodiments, the heater is a microwave heater.
- In a further embodiment of any of the foregoing embodiments, the heater is a resistance heater.
- In a further embodiment of any of the foregoing embodiments, the heater is selected from a group consisting of an induction heater, a microwave heater, and a resistance heater.
- In a further embodiment of any of the foregoing embodiments, the heater circumscribes the hot zone.
- In a further embodiment of any of the foregoing embodiments, the heater is operable to heat the hot zone above the vaporization temperature of water across a typical range of thermal emission physical vapor deposition (TE-PVD) process pressures.
- A further embodiment of any of the foregoing embodiments includes heat shields defining the hot zone.
- A method for vapor deposition according to an example of the present disclosure includes driving off moisture from an ingot in a vapor deposition chamber prior to the ingot entering a crucible, and providing the ingot to the crucible for vapor deposition.
- A further embodiment of any of the foregoing embodiments includes feeding the ingot through a hot zone and into the crucible.
- In a further embodiment of any of the foregoing embodiments, the hot zone is defined between an ingot feeder and the crucible.
- In a further embodiment of any of the foregoing embodiments, the moisture is driven off as the ingot is fed through the hot zone.
- In a further embodiment of any of the foregoing embodiments, heat is retained by providing heat shields.
- A further embodiment of any of the foregoing embodiments includes heating the hot zone with a heater that is in the chamber.
- In a further embodiment of any of the foregoing embodiments, the heater is selected from a group consisting of an induction heater, a microwave heater, and a resistance heater.
- In a further embodiment of any of the foregoing embodiments, the ingot is heated to a temperature above the vaporization temperature of water.
- In a further embodiment of any of the foregoing embodiments, the heater circumscribes the ingot.
- The various features and advantages of the present disclosure will become apparent to those skilled in the art from the following detailed description. The drawings that accompany the detailed description can be briefly described as follows.
-
FIG. 1A illustrates a process chamber. -
FIG. 1B illustrates a side view of a process chamber. -
FIG. 2 illustrates an induction heater for the process chamber ofFIG. 1 . -
FIG. 3 illustrates an example microwave heater for the process chamber ofFIG. 1 . -
FIG. 4 illustrates a resistance heater for the process chamber ofFIG. 1 . -
FIG. 5 illustrates a vapor deposition method. - Thermal emission physical vapor deposition processes (TE-PVD), such as electron beam physical vapor deposition (EB-PVD) and electron beam directed vapor deposition (EB-DVD), are used to deposit coatings. Such processes can be used to deposit ceramic coatings, for example. In vapor deposition processes, an energy source such an electron gun heats, melts, and vaporizes a source ingot, such as a ceramic material. The vapor condenses and deposits on an article in a vapor field, usually above the ingot. In an EB-DVD process, a gas stream (either inert or reactive) can be used to enhance transport of the vapor towards the article. Such processes are typically performed under vacuum and at high heat.
-
FIGS. 1A-1B illustrate avapor deposition apparatus 10. Thevapor deposition apparatus 10 includes aprocess chamber 12 that is configured to operate at vacuum and at high temperatures. For example, theprocess chamber 12 can be connected in a known manner to gas sources and a vacuum pump system, etc., not described herein. Theprocess chamber 12 includes at least oncecrucible 14, afeeder 16, and aheater 18 between thecrucible 14 and thefeeder 16. In this example, theprocess chamber 12 includes asingle crucible 14. However, it should be understood that theprocess chamber 12 may includemultiple crucibles 14. Theprocess chamber 12 also includes at least oneenergy source 17. In this example, theenergy source 17 is an electron gun. Inside theprocess chamber 12 is anarticle 20 to which a coating is to be applied by a vapor deposition process. In one example, thearticle 20 is a component for a gas turbine engine, such as an airfoil. - The
feeder 16 has adrive mechanism 22 that provides theingot material 28, such as ceramic, to thecrucible 14 via anaperture 24. Thefeeder 16 also has a mechanical guide mechanism or guide-rods 26 to guide theingot 28 into theaperture 24. Theingot 28 can be provided in the form of a cylinder, but is not limited to such a geometry. Thefeeder 16 advances theingot 28 into thecrucible 14 at a predetermined rate. In one example, the rate is 2 mm per minute (0.08 inches per minute). Theenergy source 17 melts and vaporizes the top of theingot 28 as it is delivered into thecrucible 14. - Situated between the
crucible 14 and thefeeder 16 is ahot zone 30. Theheater 18 is operable to heat thehot zone 30 across a typical range of TE-PVD process pressures. In this example, theheater 18 is fixed to thecrucible 14 byfasteners 32 and is arranged on top of the guide mechanical guide mechanism orrods 26. In someprocess chambers 12, thecrucible 14 may move throughout the vapor deposition process. In this example, theheater 18 would move with thecrucible 14. - The
ingot 28 passes adjacent theheater 18 as it advances through thehot zone 30 and theaperture 24 into thecrucible 14. If theprocess chamber 12 includesmultiple crucibles 14, eachcrucible 14 has aheater 18 fixed to it. Because theheater 18 is adjacent thecrucible 14 and is inside theprocess chamber 12, there is no need for theingot 28 to be separately heated outside theprocess chamber 12, and then inserted into theprocess chamber 12, minimizing the risk of burns or other injury to the operator. - In one example, the
heater 18 heats theingot 28 such that substantially all of the water in theingot 28 is evaporated off. In one example, theheater 18 heats theingot 28 to a temperature of above about 350° F. (177° C.). In a further example, theheater 18 heats theingot 28 to a temperature between about 350° F. (177° C.) and 400° F. (204° C.). - The
heater 18 transfers heat to a ‘moist’ingot 28, which causes any water in theingot 28 to evaporate.Ingot 28 drying can occur at ambient pressure, or at vacuum while a vacuum is being applied to theprocess chamber 12.Shields 34, such as lightweight metal or composite shields, can be used to surround the hot zone and concentrate heat on theingot 28. - In one example, shown in
FIG. 2 , theheater 18 is aninduction heater 180. Theinduction heater 180 includes acoil 182, such as a water-cooled high-frequency coil, that circumscribes theingot 28. Thecoil 182 can have a frequency that corresponds to the density and shape of theingot 28. Theinduction heater 180 also includes apower source 184. Aninduction heater 180 allows for very concentrated and quick heating of theingot 28. - In another example, shown in
FIG. 3 , theheater 18 is amicrowave heater 280. Themicrowave heater 280 includes amicrowave output antenna 282,water line connections 284 for providing cooling water to theheater 280, apower input 286, and apower source 288. Microwave energy from theantenna 282 is absorbed by water in theingot 28 as it passes by themicrowave heater 280. This process is called dielectric heating. - In a third example, shown in
FIG. 4 , theheater 18 is aresistance heater 380 connected to apower source 382. - Because the
ingot 28 is substantially freed of water as it travels through thehot zone 30 before entering thecrucible 14, the risks of cracking or fracture, delayed drying, process contamination, ‘spitting’ of molten ceramic, or the like, are reduced. -
FIG. 5 shows a method forvapor deposition 500. Instep 502, aningot 28 is heated. Instep 504, vacuum is applied to acrucible 14. Instep 506, theingot 28 is provided to thecrucible 14 after thecrucible 14 reaches vacuum. - Although a combination of features is shown in the illustrated examples, not all of them need to be combined to realize the benefits of various embodiments of this disclosure. In other words, a system designed according to an embodiment of this disclosure will not necessarily include all of the features shown in any one of the Figures or all of the portions schematically shown in the Figures. Moreover, selected features of one example embodiment may be combined with selected features of other example embodiments.
- The preceding description is exemplary rather than limiting in nature. Variations and modifications to the disclosed examples may become apparent to those skilled in the art that do not necessarily depart from this disclosure. The scope of legal protection given to this disclosure can only be determined by studying the following claims.
Claims (20)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US15/202,984 US20180010239A1 (en) | 2016-07-06 | 2016-07-06 | Vapor deposition apparatus and method |
EP17179810.1A EP3266901B1 (en) | 2016-07-06 | 2017-07-05 | Vapor deposition apparatus and method |
US17/176,436 US20210172052A1 (en) | 2016-07-06 | 2021-02-16 | Vapor deposition apparatus and method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/202,984 US20180010239A1 (en) | 2016-07-06 | 2016-07-06 | Vapor deposition apparatus and method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US17/176,436 Continuation US20210172052A1 (en) | 2016-07-06 | 2021-02-16 | Vapor deposition apparatus and method |
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Publication Number | Publication Date |
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US20180010239A1 true US20180010239A1 (en) | 2018-01-11 |
Family
ID=59295005
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/202,984 Abandoned US20180010239A1 (en) | 2016-07-06 | 2016-07-06 | Vapor deposition apparatus and method |
US17/176,436 Pending US20210172052A1 (en) | 2016-07-06 | 2021-02-16 | Vapor deposition apparatus and method |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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US17/176,436 Pending US20210172052A1 (en) | 2016-07-06 | 2021-02-16 | Vapor deposition apparatus and method |
Country Status (2)
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US (2) | US20180010239A1 (en) |
EP (1) | EP3266901B1 (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5418003A (en) * | 1993-09-10 | 1995-05-23 | General Electric Company | Vapor deposition of ceramic materials |
GB0008286D0 (en) * | 2000-04-04 | 2000-05-24 | Applied Materials Inc | A vaporiser for generating feed gas for an arc chamber |
US8123862B2 (en) * | 2003-08-15 | 2012-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Deposition apparatus and manufacturing apparatus |
US20070141233A1 (en) * | 2005-12-21 | 2007-06-21 | United Technologies Corporation | EB-PVD system with automatic melt pool height control |
-
2016
- 2016-07-06 US US15/202,984 patent/US20180010239A1/en not_active Abandoned
-
2017
- 2017-07-05 EP EP17179810.1A patent/EP3266901B1/en active Active
-
2021
- 2021-02-16 US US17/176,436 patent/US20210172052A1/en active Pending
Also Published As
Publication number | Publication date |
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US20210172052A1 (en) | 2021-06-10 |
EP3266901B1 (en) | 2021-08-25 |
EP3266901A1 (en) | 2018-01-10 |
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