KR20100082311A - Light emitting device and electronic device - Google Patents

Abstract

PURPOSE: A light emitting apparatus and an electronic appliance are provided to improve reliability by including a resin layer which covers an insulating layer and one electrode. CONSTITUTION: A device part(170) is formed on a substrate(200). A resin layer(130) covers the device part, which includes a light emitting device(140) and a switching device. The light emitting device includes a first electrode(122), an insulating layer(137) covering the first electrode, an electro luminescent layer(134), and a second electrode. The electro luminescent layer includes a light emitting layer. The insulating layer includes a convex shape part.

Description

Light emitting device and electronic device

The present invention relates to a light emitting device having a light emitting element using an electro luminescence. Moreover, it is related with the electronic device which mounted this light emitting device as a component.

Background Art In recent years, display devices in televisions, cellular phones, digital cameras, and the like require flat and thin display devices, and display devices using self-luminous light emitting elements have attracted attention as display devices for meeting this demand. As one of the self-luminous light emitting devices, there is a light emitting device using Electro Luminescence, which emits light to the light emitting material by sandwiching the light emitting material with a pair of electrodes and applying a voltage. To get it.

Such a self-luminous light emitting device has advantages such as high visibility of pixels compared to a liquid crystal monitor, unnecessary backlight, and is suitable as a flat panel display device. In addition, such a self-luminous light emitting device is one of the features that can be thinned or extremely fast response speed.

In addition, as the market for light emitting devices expands, thinning becomes an important factor for miniaturizing products, and the use range of thinning technologies and miniaturized products is rapidly expanding. For example, Patent Document 1 proposes a flexible electroluminescent light emitting device using peeling and transfer techniques.

[Patent Document 1] Japanese Patent Laid-Open No. 2003-174153

An object of one embodiment of the present invention is to provide a light emitting device with high reliability while achieving thinning. Another object of one embodiment of the present invention is to manufacture a light emitting device in which a light emitting element is formed on a flexible substrate with high yield.

One embodiment of the present invention has a substrate having flexibility, a light emitting element formed on the substrate, and a resin film covering the light emitting element. The light emitting element further includes at least a first electrode, an insulating layer covering the end of the first electrode and having a convex portion, an EL layer in contact with the first electrode, and a second electrode in contact with the EL layer. The resin film covering the element embeds the convex portion. That is, the resin film covers the entire surface of the insulating layer and the second electrode.

One embodiment of the present invention includes a flexible first substrate, a light emitting element formed on the first substrate, a resin film covering the light emitting element, and a second substrate having flexibility formed on the resin film. The light emitting element further includes at least a first electrode, an insulating layer covering the end of the first electrode and having a convex portion, an EL layer in contact with the first electrode, and a second electrode in contact with the EL layer. The resin film covering the element embeds the convex portion. That is, the resin film covers the entire surface of the insulating layer and the second electrode.

One embodiment of the present invention includes a flexible first substrate, a light emitting element formed on the first substrate, a resin film covering the light emitting element, and a second substrate having flexibility formed on the resin film. The light emitting element includes a first electrode, a first insulating layer covering the end of the first electrode, a second insulating layer in contact with the first insulating layer, and having a contact area smaller than the upper surface area of the first insulating layer; A resin film covering at least the EL layer in contact with the first electrode and the second electrode in contact with the EL layer, and covering the light emitting element, embeds the second insulating layer. That is, the resin film covers the entire surface of the second insulating layer and the second electrode.

In the light emitting device of one embodiment of the present invention described above, one or both of the first and second substrates may be a structure in which an organic resin is impregnated into a fiber body.

In this specification, the light emitting element includes an element whose luminance is controlled by a current or a voltage in its category, and specifically includes an organic EL (Electro Luminescence) element, an inorganic EL element, and the like.

In addition, the light emitting device disclosed herein may be a passive matrix type or an active matrix type.

The light emitting device in the present specification includes an image display device, a light emitting device, or a light source (including a lighting device). Also, a module equipped with a connector such as a flexible printed circuit (FPC) or Tape Automated Bonding (TAB) tape or Tape Carrier Package (TCP) on a panel, a module having a printed wiring board at the end of the TAB tape or TCP, or a light emitting device All modules in which ICs (ICs) are directly mounted by a chip on glass (COG) method will be included in the light emitting device.

In addition, the term meaning the degree used in this specification, for example, "the same", "the same degree", etc. mean the degree of rational deviation of the term changed to some extent so that a final result may not change significantly. These terms should be interpreted as including at least a plus or minus 5% deviation of the term to some extent altered, provided that the deviation does not negate the meaning of the term to be somewhat altered.

In addition, in this specification, the ordinal number attached to the 1st or 2nd etc. is used for convenience, and does not represent a process order or lamination order. In addition, in this specification, it does not show an inherent name as a matter for which this invention was specifically defined.

One embodiment of the present invention can provide a light emitting device with high reliability while achieving thinning. In addition, one embodiment of the present invention can prevent a defect in shape and characteristics even in a manufacturing process of a light emitting device, and can produce a light emitting device with good production yield.

BRIEF DESCRIPTION OF THE DRAWINGS The figure explaining the light-emitting device of one form of this invention.
2 illustrates a light emitting device of one embodiment of the present invention.
FIG. 3 is an explanatory diagram illustrating the method of manufacturing the light emitting device of one embodiment of the present invention. FIG.
4A to 4D illustrate a manufacturing method of a light emitting device of one embodiment of the present invention.
5A to 5D illustrate a manufacturing method of a light emitting device of one embodiment of the present invention.
6 shows an example of the structure of a light emitting element;
7 is a diagram illustrating an example of a structure of a light emitting device of one embodiment of the present invention.
8A to 8D illustrate a light emitting device of one embodiment of the present invention.
9A to 9D illustrate an application example of a light emitting device of one embodiment of the present invention.
10A to 10D illustrate an application example of a light emitting device of one embodiment of the present invention.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described in detail with reference to drawings. However, it is easily understood by those skilled in the art that the present invention is not limited to the following description, and the form and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, it is not interpreted only to the description content of embodiment shown below. In addition, in the structure of embodiment described below, the same code | symbol is used for the same part or the part which has the same function in common between different drawings, and the repeated description is abbreviate | omitted.

(Embodiment 1)

In this embodiment, an example of a light emitting device is described in detail with reference to FIG.

1 shows a display portion of the light emitting device of this embodiment. The light emitting device of this embodiment shown in FIG. 1 has an element portion 170 formed on a substrate 200. In addition, the element portion 170 is covered with the resin film 130.

As the substrate 200, a substrate having flexibility can be used. For example, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resins, polyimide resins, and polymethyl meta A acrylate resin, a polycarbonate resin (PC), a polyether sulfone resin (PES), a polyamide resin, a cycloolefin resin, a polystyrene resin, a polyamideimide resin, a polyvinyl chloride resin, etc. can be used suitably. Alternatively, as the substrate 200, a structure in which an organic resin is impregnated into a fiber body can be used. However, when light is extracted from the substrate 200 side, a substrate having light transparency will be used.

An element unit 170 is formed on the substrate 200. The element unit 170 includes at least a light emitting element 140 and a switching element for applying a potential to the light emitting element 140. As a switching element, a transistor (for example, a bipolar transistor, a M0S transistor, etc.), a diode (for example, a PN diode, a PIN diode, a Schottky diode, a metal insulator metal (MIM) diode, a metal insulator semiconductor (MIS) diode, Transistors, diodes, etc.), thyristors, and the like can be used. Alternatively, a logic circuit in combination of these can be used as the switching element. In this embodiment, the thin film transistor 106 is used as the switching element. In addition, the light emitting device may be integrated with a driver to include a driving circuit portion in the element portion 170. Moreover, a drive circuit can also be provided outside the sealed board | substrate.

The light emitting element 140 has a first electrode 122, an insulating layer 137 covering the end of the first electrode, an EL layer 134, and a second electrode 136. One of the first electrode 122 and the second electrode 136 is used as an anode and the other is used as a cathode.

The EL layer 134 constituting the light emitting element has at least a light emitting layer. In addition to the light emitting layer, the EL layer 134 may have a laminated structure having a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like. As the EL layer 134, any one of a low molecular material and a polymer material may be used. In addition, the material for forming the EL layer 134 includes not only an organic compound material but also a structure containing an inorganic compound.

In the case where the light emitting device is a full-color display, the EL layer 134 may be selectively formed using a material capable of obtaining light emission of red (R), green (G), and blue (B). In the case of displaying, the EL layer 134 may be formed using a material showing at least one color. In addition, you may use combining EL layer and a color filter (not shown). The color filter enables full color display even when a monochromatic light emitting layer (for example, a white light emitting layer) is used. For example, when combining an EL layer using a material capable of obtaining white (W) light emission and a color filter, full-color display is performed using four sub-pixels of pixels not forming a color filter and respective pixels of RGB. May be performed.

The insulating layer 137 has a convex portion. In this embodiment, the insulating layer 137 has a structure in which two layers of the first insulating layer 137a and the second insulating layer 137b are laminated. The insulating layer 137 is formed of an inorganic material such as an oxide of silicon or a nitride of silicon, an organic material such as polyimide, polyamide, benzocyclobutene, acryl, epoxy, or a siloxane material. In addition, the 1st insulating layer 137a and the 2nd insulating layer 137b which comprise the insulating layer 137 may be formed using the same material, or may be formed using each material.

The element unit 170 formed on the substrate 200 is covered with the resin film 130. As the resin film 130, for example, acrylic resin, polyimide resin, melamine resin, polyester resin, polycarbonate resin, phenol resin, epoxy resin, polyacetal, polyether, polyurethane, polyamide (nylon), furan Inorganic siloxane polymer containing an Si-O-Si bond or alkylsiloxane among the compounds which consist of silicon, oxygen, and hydrogen which formed the siloxane polymer type material represented by organic compounds, such as resin and a diaryl phthalate resin, and silica glass as starting materials. The organosiloxane polymer in which hydrogen couple | bonded with the silicon represented by the polymer, the alkyl silsesquioxane polymer, the hydrogenated silsesuccioxane polymer, and the hydrogenated alkyl silsesoxoxane polymer substituted by the organic group, such as methyl and phenyl, etc. can be used. Alternatively, the structure in which the organic resin is impregnated into the fiber may be used as the resin film 130.

In the case of extracting light emission from the second electrode 136 side of the light emitting element 140, the resin film 130 is formed using a material having light transmissivity on at least the display surface of the light emitting device or transmits light. It is supposed to be formed in a film thickness. When light emission is extracted only from the side of the first electrode 122 of the light emitting element 140, it is not necessary to set it as the resin film 130 which has transparency.

In the light emitting element 140 included in the light emitting device shown in the present embodiment, the insulating layer 137 serving as a partition (bank) is an insulating layer having a convex portion. In addition, in FIG. 1, although the insulating layer 137 which has the 1st insulating layer 137a and the 2nd insulating layer 137b formed on the 1st insulating layer 137a was shown, the shape of the insulating layer is this. It is not limited to this, You may have two or more convex-shaped parts. The light emitting device manufactured because the insulating layer 137 has a convex portion and the convex portion is embedded in the resin film 130 can improve the adhesion between the insulating layer 137 and the resin film 130. Can be made a highly reliable light emitting device. In addition, when the adhesion between the insulating layer 137 and the resin film 130 is improved, the light emitting element can be transferred to the flexible substrate without causing peeling inside the light emitting element in the manufacturing process of the light emitting device. . Therefore, a highly reliable light emitting device can be manufactured with good yield.

In addition, it is possible to make the light emitting device curved by reducing the thickness of the element portion 170. Therefore, the light emitting device of the present embodiment can be adhered to various substrates, and if the substrate is bonded to a substrate having a curved surface, a display having a curved surface, lighting having a curved surface, or the like can be realized. In addition, by reducing the thickness of the element unit 170, the light emitting device can be reduced in weight.

In addition, the present embodiment can be used in appropriate combination with any of the other embodiments.

(Embodiment 2)

In this embodiment, another example of the light emitting device will be described in detail with reference to FIG. 2. In addition, description is abbreviate | omitted or simplified about the structure overlapping with Embodiment 1. As shown in FIG.

2 shows a display portion of the light emitting device of this embodiment. The light emitting device of this embodiment shown in FIG. 2 has an element portion 170 sandwiched between the first substrate 132 and the second substrate 133. In addition, a resin film 130 is formed between the element portion 170 and the second substrate 133. In FIG. 2, the resin film 130 can be formed using the same material as the resin film 130 shown in Embodiment 1. FIG.

As the first substrate 132 and the second substrate 133, flexible substrates can be used. For example, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), and polyacrylonitrile. Resins, polyimide resins, polymethyl methacrylate resins, polycarbonate resins (PCs), polyethersulfone resins (PES), polyamide resins, cycloolefin resins, polystyrene resins, polyamideimide resins, polyvinyl chloride resins, and the like. It can use suitably. However, a substrate having translucency will be used for the substrate located at least in the light extraction direction of the light emitting element.

In addition, it is preferable that the 1st board | substrate 132 and the 2nd board | substrate 133 are materials with a low thermal expansion coefficient, and the material which has a similar thermal expansion coefficient is used. Moreover, it is more preferable that the 1st board | substrate 132 and the 2nd board | substrate 133 are comprised from the same material. Moreover, since the heat resistance of a light-emitting device improves that the thermal expansion coefficient which the 1st board | substrate 132 and the 2nd board | substrate 133 have is 20 ppm / degrees C or less, it is preferable.

In the present embodiment, a structure in which the organic resin 132b is impregnated into the fiber body 132a is used as the first substrate 132 and the second substrate 133. It is preferable that the structure used as the 1st board | substrate 132 and the 2nd board | substrate 133 uses material whose elasticity modulus is 13 GPa or more and a fracture coefficient is less than 300 Mpa. In addition, it is preferable that the 1st board | substrate 132 and the 2nd board | substrate 133 are the film thickness of 5 micrometers or more and 50 micrometers or less, and the 1st board | substrate 132 and the 2nd board | substrate 133 have the same film thickness. It is preferable. Since the first substrate 132 and the second substrate 133 have the same film thickness, the element unit 170 can be disposed in the center of the light emitting device. When the film thickness of the first and second substrates is 5 µm or more and 50 µm or less, the film thickness of the first substrate and the second substrate is thicker than the film thickness of the element portion, so that the element portion is disposed almost at the center. A light emitting device resistant to bending stress can be provided.

In this embodiment, the fiber body 132a in the structure used as the 1st board | substrate 132 and the 2nd board | substrate 133 is woven with the warp spaced at fixed intervals and the weft spaced at the fixed interval. Fibers woven using such warp and weft yarns have areas where no warp and weft yarns are present. The ratio of the fiber body 132a to which the organic resin 132b is impregnated is high, and the adhesion between the fiber body 132a and the light emitting device can be improved.

In addition, the fiber body 132a may have a high density of warp and weft, and may be low in the ratio of regions where no warp and weft are present.

Moreover, in order to raise the penetration rate of the organic resin in a fiber bundle inside, you may surface-treat a fiber. For example, corona discharge treatment, plasma discharge treatment, etc. for activating a fiber surface are mentioned. Moreover, there exists a surface treatment using a silane coupling agent and a titanate coupling agent.

In the structure in which the organic resin is impregnated into the fiber body, a plurality of layers may be laminated. In this case, the structure may be formed by laminating a plurality of structures impregnated with an organic resin on a single layered fiber body, and the first substrate 132 or the second substrate may be formed by a structure in which the plurality of laminated fibers are impregnated with an organic resin. You may use as (133). In addition, when laminating plural structures impregnated with an organic resin on a single-layer fiber body, different layers may be sandwiched between the respective structures.

The element portion 170 sandwiched by the first substrate 132 and the second substrate 133 includes a light emitting element 140 and a switching element for applying a potential to the light emitting element 140. In this embodiment, the thin film transistor 106 is used as the switching element. In addition, the light emitting device may be integrated with a driver to include a driving circuit portion in the element portion 170. Moreover, a drive circuit can also be provided outside the sealed board | substrate.

The light emitting element 140 has a first electrode 122, an insulating layer 137 covering the end of the first electrode, an EL layer 134, and a second electrode 136. One of the first electrode 122 and the second electrode 136 is used as an anode and the other is used as a cathode. The light emitting element 140 of FIG. 2 can have the same structure as the light emitting element 140 shown in Embodiment 1. FIG.

The insulating layer 137 has a convex portion. In this embodiment, the insulating layer 137 has a structure in which two layers of the first insulating layer 137a and the second insulating layer 137b are laminated. The insulating layer 137 is formed of an inorganic material such as an oxide of silicon or a nitride of silicon, an organic material such as polyimide, polyamide, benzocyclobutene, acryl, epoxy, or a siloxane material. In addition, the 1st insulating layer 137a and the 2nd insulating layer 137b which comprise the insulating layer 137 may be formed using the same material, or may be formed using each material.

The insulating layer 137 has a convex portion, and the resin film 130 embeds the convex portion, that is, the resin film 130 covers the entire surfaces of the insulating layer 137 and the second electrode 136. The adhesion between the insulating layer 137 and the resin film 130 can be improved. Therefore, the manufactured light emitting device can be made into a highly reliable light emitting device. In addition, when the adhesion between the insulating layer 137 and the resin film 130 is improved, the light emitting element can be transferred to the flexible substrate without causing peeling inside the light emitting element in the manufacturing process of the light emitting device. . Therefore, a highly reliable light emitting device can be manufactured with good yield.

In addition, in this embodiment, the fiber body 132a contained in the structure which functions as a 1st and 2nd board | substrate is formed from high strength fiber, and high strength fiber has high tensile elasticity modulus or high Young's modulus. For this reason, even when local pressure such as viscous pressure or linear pressure is applied to the light emitting device, the high-strength fibers are not stretched, and the pressurized force is dispersed throughout the fiber body 132a, thereby causing the entire light emitting device to bend. As a result, even if local pressurization is applied, the curvature generated by the light emitting device has a large radius of curvature, and cracks do not occur in the light emitting element, wiring, etc. sandwiched by the pair of structures, and the destruction of the light emitting device can be reduced. .

In addition, it is possible to make the light emitting device curved by reducing the thickness of the element portion 170.

Therefore, the light-emitting device of this embodiment can be adhere | attached to various base materials, and if it adheres to the base material which has a curved surface, display and lighting which have a curved surface can be implement | achieved. In addition, by reducing the thickness of the element unit 170, the light emitting device can be reduced in weight.

In addition, the present embodiment can be used in appropriate combination with any of the other embodiments.

(Embodiment 3)

In this embodiment, an example of the manufacturing method of the light emitting device shown in Embodiment 2 is demonstrated in detail with reference to drawings.

First, the release layer 102 is formed on one surface of the substrate 100, and the insulation layer 104 is subsequently formed (see FIG. 3A). The peeling layer 102 and the insulating layer 104 can be formed continuously. By forming continuously, since it is not exposed to air | atmosphere, mixing of impurities can be prevented.

The substrate 100 may be a glass substrate, a quartz substrate, a metal substrate, a stainless steel substrate, or the like. For example, productivity can be improved significantly by using the rectangular glass substrate whose one side is 1 meter or more.

Moreover, although the case where the peeling layer 102 was formed in the whole surface of the board | substrate 100 was shown in this process, after forming the peeling layer 102 in the whole surface of the board | substrate 100 as needed, the said peeling layer was carried out. You may selectively remove 102 and form a release layer only in a desired region. In addition, although the release layer 102 was formed in contact with the substrate 100, an insulating layer such as a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or a silicon nitride oxide film was formed so as to contact the substrate 100 as needed. The release layer 102 may be formed in contact with the insulating layer.

The release layer 102 is formed by tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb) having a thickness of 30 nm to 200 nm by sputtering, plasma CVD, coating, printing, or the like. , Nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), and silicon (Si ), A layer made of an element selected from an element, an alloy material containing an element as a main component, or a compound material containing an element as a main component is formed by stacking a single layer or a plurality of layers. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline. Here, the coating method is a method of forming a film by discharging a solution onto an object to be processed, and includes, for example, a spin coating method and a droplet discharging method. In addition, the droplet ejection method is a method of ejecting the droplet of the composition containing microparticles | fine-particles from a minute hole, and forming the pattern of a predetermined shape.

When the release layer 102 is of a single layer structure, preferably, a layer including tungsten, molybdenum or a mixture of tungsten and molybdenum is formed. Or a layer comprising an oxide or oxynitride of tungsten or a layer comprising an oxide or oxynitride of a mixture of tungsten and molybdenum. In addition, the mixture of tungsten and molybdenum corresponds to an alloy of tungsten and molybdenum, for example.

When the peeling layer 102 is a laminated structure, Preferably, a metal layer is formed as a 1st layer, and a metal oxide layer is formed as a 2nd layer. For example, as the first metal layer, a layer containing tungsten, molybdenum, or a mixture of tungsten and molybdenum is formed, and as the second layer, an oxide of tungsten, molybdenum, or a mixture of tungsten and molybdenum, tungsten, or tungsten A layer is formed comprising nitrides of the mixture of molybdenum, tungsten, or oxynitrides of the mixture of tungsten and molybdenum, or nitride oxides of tungsten, or a mixture of tungsten and molybdenum.

In the case of forming the laminated structure of the metal layer as the first layer and the metal oxide layer as the second layer as the release layer 102, a layer containing tungsten as the metal layer is formed, and an insulating layer formed of an oxide is formed on the upper layer. And a layer containing tungsten oxide as a metal oxide layer may be utilized at the interface between the layer containing tungsten and the insulating layer. Further, the metal oxide layer may be formed by subjecting the surface of the metal layer to a thermal oxidation treatment, an oxygen plasma treatment, a treatment with a strong oxidizing solution such as ozone water, or the like.

The insulating layer 104 functions as a protective layer to facilitate peeling at the interface with the peeling layer 102 in a subsequent peeling step, or to prevent cracks and damage on the semiconductor element or wiring in a subsequent peeling step. Form. For example, the insulating layer 104 is formed in a single layer or multiple layers using an inorganic compound by sputtering, plasma CVD, coating, printing, or the like. Representative examples of the inorganic compound include silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, and the like. In addition, by using silicon nitride, silicon nitride oxide, silicon oxynitride, or the like as the insulating layer 104, it is possible to prevent intrusion of gases such as moisture and oxygen into the element layer formed later from the outside. As for the thickness of the insulating layer which functions as a protective layer, 10 nm or more and 100 Onm or less, or 100 nm or more and 700 nm or less are preferable.

Next, a thin film transistor 106 is formed over the insulating layer 104 (see FIG. 3B). The thin film transistor 106 includes a semiconductor layer 108 having a source region, a drain region, and a channel formation region, a gate insulating layer 110, and a gate electrode 112.

The semiconductor layer 108 is preferably formed with a thickness of 10 nm or more and 100 nm or less, more preferably 20 nm or more and 70 nm or less. The material for forming the semiconductor layer 108 is an amorphous semiconductor produced by a vapor phase growth method or a sputtering method using a semiconductor material represented by silane or germane, a polycrystalline semiconductor in which the amorphous semiconductor is crystallized using light energy or thermal energy, Alternatively, a microcrystalline semiconductor, a semiconductor containing an organic material as a main component, or the like can be used. When a crystalline semiconductor layer is used for the semiconductor layer, the method for producing the crystalline semiconductor layer may be applied by laser light irradiation, heat treatment using Instantaneous Thermal Annealing (RTA) or Furnace Annealing, or a combination of these methods. Can be. In the heat treatment, a crystallization method using a metal element such as nickel having a function of promoting crystallization of the silicon semiconductor can be applied.

As the material of the semiconductor, compound semiconductors such as GaAs, InP, SiC, ZnSe, GaN, SiGe, and the like can be used in addition to the elements such as silicon (Si) and germanium (Ge). Zinc oxide (ZnO), tin oxide (SnO ₂ ), magnesium oxide, gallium oxide, indium oxide, which are oxide semiconductors, and oxide semiconductors composed of a plurality of oxide semiconductors can be used. For example, an oxide semiconductor composed of zinc oxide, indium oxide, and gallium oxide may be used. When zinc oxide is used for the semiconductor layer, the gate insulating layer may be Y ₂ O ₃ , Al ₂ O ₃ , TiO ₂ , a lamination thereof, or the like, and ITO and Au may be used as the gate electrode layer, the source electrode layer, or the drain electrode layer. , Ti, etc. may be used. Moreover, In, Ga, etc. can also be added to ZnO.

The gate insulating layer 110 is formed of an inorganic insulator such as silicon oxide and silicon oxynitride having a thickness of 5 nm or more and 200 nm or less, preferably 10 nm or more and 100 nm or less.

The gate electrode 112 may be formed of a polycrystalline semiconductor to which metal or monoconductive impurities are added. In the case of using a metal, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), or the like may be used. In addition, metal nitrides in which metals are nitrided can be used. Alternatively, the structure may be such that the first layer made of the metal nitride and the second layer made of the metal are laminated. At this time, the first layer is made of a metal nitride, and can be a barrier metal. That is, it is possible to prevent the metal of the second layer from diffusing into the gate insulating layer or the semiconductor layer below it. In addition, when it is set as a laminated structure, you may have a shape which the edge part of a 1st layer protruded outward rather than the edge part of a 2nd layer.

The thin film transistor 106 formed by combining the semiconductor layer 108, the gate insulating layer 110, the gate electrode 112, and the like applies various structures such as a single drain structure, a low concentration drain (LDD) structure, and a gate overlap drain structure. can do. Here, the LDD structure thin film transistor in which the low concentration impurity region was formed using the insulating layer (also called a "side wall") which contacts the side surface of the gate electrode 112 is shown. Equivalently, a multi-gate structure in which a transistor to which a gate voltage of the same potential is applied is connected in series, a dual gate structure in which upper and lower portions of a semiconductor layer are sandwiched, and the like can be used. have. In addition, although the example of the thin-film transistor of a top gate structure was shown in the figure, of course, you may use the thin-film transistor of a bottom gate structure and other well-known structure other than that.

As the thin film transistor, it is possible to use a thin film transistor using a metal oxide or an organic semiconductor material for the semiconductor layer. Typical examples of the metal oxides include zinc oxide and oxides of zinc gallium indium.

Moreover, when forming a thin film transistor manufactured by the process of comparatively low temperature (less than 500 degreeC) as a thin film transistor, the layer which consists of molybdenum (Mo), the alloy material which has molybdenum as a main component, or the compound material which has a molybdenum element as a main component It is preferable to form the peeling layer 102 by laminating | stacking a single layer or two or more.

Next, the wiring 118 is electrically connected to the source region and the drain region of the thin film transistor 106, and the first electrode 122 electrically connected to the wiring 118 is formed (see FIG. 3C). ).

In this case, the insulating layers 114 and 116 are formed to cover the thin film transistor 106, and a wiring 118 that can also function as a source electrode and a drain electrode is formed on the insulating layer 116. Thereafter, the insulating layer 120 is formed on the wiring 118, and the first electrode 122 is formed on the insulating layer 120.

The insulating layers 114 and 116 function as interlayer insulating layers. The insulating layers 114 and 116 are formed of inorganic materials such as silicon oxide and silicon nitride, polyimide, polyamide, benzocyclobutene, and acryl by CVD, sputtering, SOG, drop ejection, and screen printing. It is formed by a single layer or lamination by organic materials, such as epoxy and siloxane materials. In this case, the first insulating layer 114 may be formed of a silicon nitride oxide film, and the second insulating layer 116 may be formed of a silicon oxynitride film.

The wiring 118 includes a low-resistance material such as aluminum (Al), such as a laminated structure of titanium (Ti) and aluminum (Al), a laminated structure of molybdenum (Mo), and aluminum (Al), and a titanium (Ti) or molybdenum ( It is preferable to form in combination with a barrier metal using a high melting point metal material such as Mo).

The insulating layer 120 is formed of an inorganic material such as silicon oxide or silicon nitride, polyimide, polyamide, benzocyclobutene, acrylic, epoxy by CVD, sputtering, SOG, drop ejection, screen printing, or the like. It is formed by single layer or lamination by organic materials such as siloxane materials or the like. Here, the insulating layer 120 is formed of epoxy using a screen printing method.

The first electrode 122 is an electrode used as the anode or cathode of the light emitting element. In the case of using as an anode, it is preferable to use a material having a large work function. For example, an electrically conductive film formed by sputtering using an indium tin oxide film, an indium tin oxide film containing silicon, and a target in which 2-20 wt% of zinc oxide (ZnO) is mixed with indium oxide, In addition to monolayer films such as zinc oxide (ZnO) films, titanium nitride films, chromium films, tungsten films, Zn films, and Pt films, a laminate of films mainly composed of titanium nitride and aluminum, a film mainly composed of titanium nitride film and aluminum, A three-layer structure of titanium nitride film can be used. In addition, when the anode is a laminated structure, the resistance as the wiring is low, and good ohmic contact can be obtained.

In the case of using as a cathode, it is preferable to use a material having a small work function (Al, Ag, Li, Ca or alloys thereof MgAg, MgIn, AlLi, CaF ₂ , or calcium nitride). In the case where the first electrode 122 used as the cathode is made transparent, a metal thin film having a thin film thickness, an electrically conductive film (indium tin oxide film, an indium tin oxide film containing silicon), It is preferable to use a lamination with a light-transmitting conductive film, zinc oxide (ZnO, etc.) formed by a sputtering method using a target in which 2-20 wt% of zinc oxide (ZnO) is mixed with indium oxide.

Subsequently, the first insulating layer 137a is formed to cover the end of the first electrode 122 (see FIG. 3D). In this embodiment, the first insulating layer 137a is formed by using a positive photosensitive acrylic resin film. In order to make the covering property of the 1st insulating layer 137a favorable, it is preferable to form so that the curved surface which has curvature may be formed in the upper end part or the lower end part. For example, when positive type photosensitive acrylic is used as the material of the first insulating layer 137a, it is preferable to have a curved surface having a radius of curvature (0.2 μm to 3 μm) only at the upper end of the first insulating layer 137a. Do. As the first insulating layer 137a, either a negative type insoluble in the etchant by photosensitive light or a positive type insoluble in the etchant by light can be used. In addition, as the first insulating layer 137a, inorganic materials such as silicon oxide and silicon nitride, organic materials such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, and siloxane materials such as siloxane resins may be used. It can be formed in a single layer or laminated structure.

Subsequently, a second insulating layer 137b is formed on the first insulating layer 137a. Similar to the first insulating layer 137a, the second insulating layer 137b may be formed of an inorganic material such as an oxide of silicon or a nitride of silicon, an organic material such as polyimide, polyamide, benzocyclobutene, acrylic, epoxy, or siloxane. It is formed of a material or the like. In addition, the 1st insulating layer 137a and the 2nd insulating layer 137b may be formed using the same material, or may be formed using each material. In addition, the contact area between the second insulating layer 137b and the first insulating layer 137a is smaller than the upper surface area of the first insulating layer 137a, and the second insulating layer 137b is disposed on the first insulating layer 137a. It is preferable to form so that it may enter. In addition to the photolithography method, the second insulating layer 137b can be formed by a screen printing method, an inkjet method, or the like. Thereby, the insulating layer 137 which consists of two layers of the 1st insulating layer 137a and the 2nd insulating layer 137b is formed.

In addition, by performing plasma treatment on the insulating layer 137 and oxidizing or nitriding the insulating layer 137, the surface of the insulating layer 137 can be modified to obtain a dense film. By modifying the surface of the insulating layer 137, the strength of the insulating layer 137 is improved, so that physical damage such as cracking at the time of forming the openings or the like and film reduction at the time of etching can be reduced.

Next, the EL layer 134 is formed over the first electrode 122. As the EL layer 134, any one of a low molecular material and a polymer material may be used. In addition, the material for forming the EL layer 134 includes not only an organic compound material but also a structure including an inorganic compound as a part. The EL layer 134 may have at least a light emitting layer, may be a single layer structure composed of one light emitting layer, or may be a laminated structure composed of layers having different functions. For example, in addition to the light emitting layer, a functional layer having respective functions such as a hole injection layer, a hole transport layer, a carrier blocking layer, an electron transport layer, and an electron injection layer can be appropriately combined. Moreover, you may include the layer which has two or more functions which each layer has simultaneously.

In addition, the EL layer 134 can be used regardless of wet or dry methods such as vapor deposition, inkjet, spin coating, dip coating, nozzle printing, and the like.

Subsequently, the second electrode 136 is formed on the EL layer 134. Thereby, the light emitting element 140 in which the 1st electrode 122, the insulating layer 137 which covers the edge part of the 1st electrode 122, the EL layer 134, and the 2nd electrode 136 is laminated is formed. Can be. The first electrode 122 and the second electrode 136 use one direction as an anode and the other as a cathode.

In the present embodiment, the first electrode 122 is used as the anode, and the EL layer 134 has a structure in which a hole injection layer, a hole transport layer, a light emitting layer, and an electron injection layer are laminated in order from the first electrode 122 side. do. Various materials can be used as a light emitting layer. For example, a fluorescent compound that emits fluorescence or a phosphorescent compound that emits phosphorescence can be used.

In addition, when using the 1st electrode 122 as a cathode, it is preferable that the thin film transistor 106 connected with the 1st electrode 122 is an n-channel transistor.

Subsequently, an insulating layer 138 is formed over the second electrode 136 to cover the light emitting element 140 (see FIG. 4A). As a result, the element unit 170 including the thin film transistor 106 and the light emitting element 140 can be formed. The insulating layer 138 functions as a protective layer of the light emitting element 140, and is formed in order to prevent moisture or damage from occurring in the EL layer 134 in the subsequent pressing process of the second substrate. It also functions as a heat insulating layer for reducing the heating of the EL layer 134 when the subsequent second substrate is pressed. For example, the insulating layer 138 is formed in a single layer or multiple layers using an inorganic compound by sputtering, plasma CVD, coating, printing, or the like. Representative examples of the inorganic compound include silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, and the like. It is also preferable to use a film having good coverage as the insulating layer 138. In addition, the insulating layer 138 may be a laminated film of an organic compound and an inorganic compound. In addition, by using silicon nitride, silicon nitride oxide, silicon oxynitride, or the like as the insulating layer 138, it is possible to prevent intrusion of gas such as moisture, oxygen, or the like into the element layer formed later from the outside. As for the thickness of the insulating layer which functions as a protective layer, 10 nm or more and 1000 nm or less, or 100 nm or more and 70 Onm or less are preferable.

Next, as shown in FIG. 4B, a resin film 130 is formed on the element portion 170. The resin film 130 can be formed by, for example, applying a composition using a coating method, and drying and heating. Since the resin film 130 functions as a protective layer of a light emitting element in a subsequent peeling step, it is preferable that the resin film 130 is a film with less surface irregularities. In addition, a material having good adhesion to the insulating layer 138 will be used. Specifically, when the resin film 130 is formed using the coating method, for example, acrylic resin, polyimide resin, melamine resin, polyester resin, polycarbonate resin, phenol resin, epoxy resin, polyacetal, poly Si-0- in the compound which consists of silicon, oxygen, and hydrogen formed from organic compounds, such as an ether, a polyurethane, a polyamide (nylon), a furan resin, and a diaryl phthalate resin, and the siloxane polymer type material represented by silica glass as a starting material Inorganic siloxane polymers containing Si bonds or hydrogen bonded to silicon represented by alkylsiloxane polymers, alkylsilsesquioxane polymers, hydrogenated silsesquioxane polymers, hydrogenated alkylsilsesukioxane polymers are substituted by organic groups such as methyl or phenyl Organic siloxane polymer and the like can be used. Alternatively, the structure in which the organic resin is impregnated into the fiber may be used as the resin film 130.

In the case of extracting light emission from the second electrode 136 side of the light emitting element 140, the resin film 130 is formed using a material having light transmissivity on at least the display surface of the light emitting device or transmits light. It is supposed to be formed in a film thickness. When light emission is extracted only from the side of the first electrode 122 of the light emitting element 140, it is not necessary to set it as the resin film 130 which has transparency.

Subsequently, the pressure-sensitive adhesive sheet 131 is bonded to the resin film 130 and formed. The adhesive sheet 131 applies a sheet which can be peeled off by light or heat. By sticking the adhesive sheet 131, peeling can be easily performed, and the stress applied to the element portion 170 before and after peeling is reduced, and damage to the thin film transistor 106 and the light emitting element 140 is suppressed. It becomes possible. In the case where a plurality of light emitting device panels are formed (multi-sided) from one substrate, each of the regions forming the panel is etched before forming the adhesive sheet 131, Each element part which comprises the panel of can be isolate | separated. Or after pinching with a 1st board | substrate and a 2nd board | substrate, you may isolate | separate for every element part by dicing etc.

Next, the element portion 170 including the thin film transistor 106, the light emitting element 140, and the like is peeled from the substrate 100 (see FIG. 4C). Various methods can be used as a peeling method. For example, in the case where the metal oxide layer is formed on the side in contact with the insulating layer 104 as the release layer 102, the metal oxide layer is weakened by crystallization, and the element portion 170 can be peeled off from the substrate 100. Can be. As the substrate 100, a substrate having light transparency is used, and as the release layer 102, a film containing nitrogen, oxygen, hydrogen, or the like (for example, an amorphous silicon film containing hydrogen, a hydrogen-containing alloy film, and oxygen). Containing alloy film, etc.), the laser light is irradiated to the release layer 102 from the substrate 100, and vaporizes nitrogen, oxygen, or hydrogen contained in the release layer to form the substrate 100 and the release layer 102. The method of peeling off can be used. Alternatively, the element portion 170 may be separated from the substrate 100 by removing the release layer 102 by etching.

Alternatively, the substrate 100 may be mechanically polished and removed, or the substrate 100 may be removed by etching with a halogenated fluoride gas such as NF ₃ , BrF ₃ , ClF ₃ , or HF. In this case, the release layer 102 may not be used. Further, as the release layer 102, a metal oxide layer is formed on the side in contact with the insulating layer 104, the metal oxide film is weakened by crystallization, and a part of the release layer 102 is further formed by a solution, NF ₃ , BrF _3. After removal by etching with a halogenated fluoride gas such as ClF ₃ , it can be stripped off the weakened metal oxide layer.

In addition, using a laser beam, etching with a gas or a solution, or the like, or using a sharp knife or a scalpel, a groove is formed to expose the release layer 102, and the groove is used as the release layer 102 and the protective layer. The element portion 170 may be separated from the substrate 100 at the interface of the insulating layer 104 that functions. As a peeling method, what is necessary is just to apply using a mechanical force (process which peels off with a human hand or a holding | gripping tool, the process which isolate | separates while rotating a roller, etc.). In addition, a liquid may be dropped into the groove to infiltrate the liquid into the interface between the peeling layer 102 and the insulating layer 104 to peel the element 170 from the peeling layer 102. In addition, a method of introducing a fluorinated gas such as NF ₃ , BrF ₃ , ClF _{3 into the} groove, etching off the release layer with a fluorinated gas, and peeling the element portion 170 from the substrate having an insulating surface may be used. Can be. In addition, when peeling, you may peel, adding liquid, such as water.

As another peeling method, when the peeling layer 102 is formed of tungsten, peeling can be performed while etching the peeling layer with a mixed solution of aqueous ammonia and hydrogen peroxide.

In general, the adhesion between the EL layer containing the organic compound and the second electrode formed of the inorganic compound is very low, and peeling may occur from the interface between the EL layer and the second electrode in the peeling step. However, in the light emitting element 140 shown in this embodiment, the insulating layer 137 has a convex portion, and the resin film 130 embeds the insulating layer 137 (or the convex portion of the insulating layer 137). . That is, the resin film 130 covers the insulating layer 137 (or the convex portion of the insulating layer 137) and the entire surface of the second electrode. Since the insulating layer 137 acts like a wedge in the resin film 130 (has a so-called anchor effect), the adhesion between the resin film 130 and the insulating layer 137 is increased. Therefore, it is difficult to peel at the interface between the EL layer 134 and the second electrode 136 in the peeling step, and the element portion 170 can be peeled from the substrate 100 with good production yield.

Next, the 1st board | substrate 132 is formed in the peeling surface (surface of the insulating layer 104 exposed by peeling) of the element part 170 which peeled. In the present embodiment, the first structure 132b is formed with the first resin structure 132b impregnated with the organic resin 132b (see FIG. 5A). Such a structure is also called a prepreg.

The prepreg is obtained by impregnating a varnish obtained by diluting a matrix resin with an organic solvent in a fiber body, followed by drying to volatilize the organic solvent, thereby semi-curing the matrix resin. The thickness of the structure is preferably 10 µm or more and 100 µm or less, or 10 µm or more and 30 µm. By using the structure of such a thickness, the light emitting device which can be thin and curved can be manufactured.

As the organic resin 132b, a heat changeable resin, an ultraviolet curable resin, or the like can be used, and specifically, an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide triazine resin or a cyanate resin can be used. . Moreover, you may use thermoplastic resins, such as a polyphenylene oxide resin, polyetherimide resin, or a fluororesin. By using the said organic resin, a fiber body can be fixed to a semiconductor integrated circuit by heat processing. The organic resin 132b is preferable because the higher the glass potential temperature is, the less likely it is to be destroyed by local pressure.

The high thermal conductivity filler may be dispersed in the yarns of the organic resin 132b or the fiber body 132a. Examples of the high thermal conductivity fillers include aluminum nitride, boron nitride, silicon nitride, and alumina. Moreover, as a high thermal conductive filler, there exist metal particles, such as silver and copper. Since the conductive filler is contained in the organic resin or the fiber yarn, it is easy to discharge heat generation to the outside, so that heat storage of the light emitting device can be suppressed, and destruction of the light emitting device can be reduced.

The fiber body 132a is a woven or nonwoven fabric using high strength fibers of an organic compound or an inorganic compound, and is disposed so as to partially overlap. Specifically as a high strength fiber, it is a fiber with high tensile modulus or a Young's modulus. Representative examples of the high strength fibers include polyvinyl alcohol fibers, polyester fibers, polyamide fibers, polyethylene fibers, aramid fibers, polyparaphenylene benzobisoxazole fibers, glass fibers, or carbon fibers. As glass fiber, the glass fiber using E glass, S glass, D glass, Q glass, etc. are mentioned. The fiber body 132a may be formed of one kind of the above high strength fibers. Moreover, you may form from the said high strength fiber. In addition, it is preferable that the fiber body 132a and the organic resin 132b use the material which has the same refractive index.

Further, the fiber body 132a may be a woven fabric which uses a bundle of fibers (single yarn) (hereinafter referred to as yarn) for warp and weft, or a nonwoven fabric in which yarns of a plurality of kinds of fibers are randomly or deposited in one direction. good. In the case of woven fabrics, plain weave, twill weave, and rhetoric weave can be used as appropriate.

The cross section of the yarn may be circular or elliptical. As the fiber yarns, fiber yarns that have been opened can be used by high pressure water flow, high frequency vibration using liquid, vibration of continuous ultrasonic waves, pressurization by roll, or the like. The fiber yarns subjected to the carding process have a wider yarn width, so that the single yarn in the thickness direction can be reduced, and the cross section of the yarns is elliptical or flat. In addition, by using low twisting yarn as the fiber yarn, it is easy to flatten the yarn, and the cross section of the yarn is elliptical or flat. In this way, it is possible to make the fiber body 132a thin by using an elliptical or flat yarn. For this reason, the structure can be made thin and a thin light emitting device can be manufactured.

Next, the first structure to be used as the first substrate 132 is heated and pressed to plasticize, semi-cure or harden the organic resin 132b of the first structure. When heating the 1st board | substrate 132, it is preferable to make heating temperature into 100 degrees C or less. Moreover, when organic resin 132b is a plastic organic resin, the plasticized organic resin is hardened by cooling to room temperature after this. Alternatively, the first structure may be irradiated with ultraviolet light and compressed to be cured by curing the organic resin 132b. The organic resin 132b uniformly spreads and hardens on the surface of the element formation layer 124 by heating, ultraviolet light irradiation, or compression. The step of compressing the first structure can be performed at atmospheric pressure or under reduced pressure.

After the 1st structure is crimped | bonded, the adhesive sheet 131 is removed and the resin film 130 is exposed. Next, the second substrate 133 is formed on the resin film 130 (see FIG. 5B). In the present embodiment, like the first substrate 132, the second substrate 133 also uses a second structure in which an organic resin is impregnated into the fiber body. Thereafter, the second structure is heated and compressed to plasticize or harden the organic resin 132b of the second structure. Alternatively, the second structure may be irradiated with ultraviolet light and compressed to cure the organic resin 132b. In addition, the resin film 130 can also function as the second substrate 133. In this case, the second substrate 133 may not be newly formed.

As described above, the light emitting device of the present embodiment having the light emitting elements sandwiched by the first and second substrates can be formed.

In addition, in this embodiment, the insulating layer 137 which functions as a partition has a convex-shaped part which consists of the 1st insulating layer 137a and the 2nd insulating layer 137b formed one layer on the 1st insulating layer 137a. Although it was set as the structure, embodiment of this invention is not limited to this. The insulating layer which functions as a partition is embedded in the resin film 130, and in order to improve adhesiveness with the resin film 130, the surface area is large, and what is necessary is just to have a convex-shaped part. For example, like the light emitting element shown in FIG. 6A, an insulating layer 137 having convex portions in which two second insulating layers 137b are formed may be formed on the first insulating layer 137a. The second insulating layer 137b can be formed by a photolithography method, a screen printing method, an inkjet method, or the like. In addition, like the light emitting element shown in FIG. 6B, an insulating layer 137 having convex portions in which three second insulating layers 137b are formed may be formed on the first insulating layer 137a. The larger the surface area of the insulating layer 137 is, the more preferable the anchor effect is, and the adhesion between the insulating layer 137 and the resin film 130 can be improved. In addition, in the pair of insulating layers 137 covering the end portions of the first electrodes, the number of the convex portions of each of the insulating layers 137 may be different. In the case where the plurality of second insulating layers 137b are formed on the first insulating layer 137a, the contact area between the plurality of second insulating layers 137b and the first insulating layer 137a is defined by the first insulating layer ( It is preferable to form smaller than the upper surface area of 137a, and the some 2nd insulating layer 137b may enter on the 1st insulating layer 137a.

In addition, as in the light emitting element shown in Fig. 6C, the insulating layer 137 may have a laminated structure of three or more layers. However, the thickness of the insulating layer 137 (the height from the surface of the insulating layer 120 to the outermost surface of the insulating layer 137) is preferably 300 nm or more and 5 μm or less. Insulating property becomes favorable by making the film thickness of an insulating layer into 300 nm or more. In addition, the insulating layer 137 can be formed with good productivity by setting it as 5 micrometers or less.

In addition, in this embodiment, although the structure (so-called prepreg) in which the organic resin was impregnated into the fiber body was shown as the 1st board | substrate 132 and the 2nd board | substrate 133, embodiment of this invention shows this. It is not limited to. For example, as the 1st board | substrate 132 or the 2nd board | substrate 133, polyester resins, such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), an acrylic resin, a polyacrylonitrile resin, a polyimide resin, Substrate having flexibility made of polymethyl methacrylate resin, polycarbonate resin (PC), polyethersulfone resin (PES), polyamide resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyvinyl chloride resin, etc. Alternatively, a film or the like may be used to bond the insulating layer 104 or the resin film 130 with an adhesive. As the adhesive material, various curable adhesives such as photocurable adhesives and anaerobic adhesives such as reaction curable adhesives, heat curable adhesives and ultraviolet curable adhesives can be used. Epoxy resin, acrylic resin, silicone resin, phenol resin, etc. can be used as a material of these adhesive agents. However, at least a substrate having translucency will be used for the substrate located in the light extraction direction of the light emitting element 140.

In addition, a metal substrate may be used as the first substrate 132 or the second substrate 133. In order to obtain flexibility, the metal substrate is preferably used having a thickness of 10 µm or more and 200 µm or less. Moreover, it is more preferable that film thickness is 20 micrometers or more and 100 micrometers or less, since flexibility is high. Although there is no limitation in particular as a material which comprises a metal substrate, Metals, such as aluminum, copper, and nickel, alloys of metals, such as an aluminum alloy or stainless steel, etc. can be used suitably. This metal substrate can be adhere | attached with the insulating layer 104 or the resin film 130 by an adhesive agent. Moreover, it is preferable to remove the water adhering to the surface by baking in a vacuum or plasma processing before a metal substrate adheres using an adhesive agent.

Since a metal substrate has low water permeability, it can be used as a support body of a light emitting device, and can prevent the invasion of moisture into the light emitting element 140, and it becomes possible to set it as a light emitting device with a long lifetime. In addition, although the metal substrate has both low water permeability and flexibility, the light transmittance to visible light is low. Therefore, it is preferable that the metal substrate be used only in one direction among a pair of substrates sandwiching the light emitting element. Do.

In addition, as shown in FIG. 7A, a desiccant 142 may be formed between the resin film 130 and the second substrate 133. By sealing the desiccant 142, deterioration of the light emitting element due to moisture or the like can be prevented. As a desiccant, it is possible to use a substance which absorbs moisture by chemical adsorption such as an oxide of an alkaline earth metal such as calcium oxide or barium oxide. As another desiccant, a substance which adsorbs moisture by physical adsorption such as zeolite or silica gel may be used. In the case where the light emission is extracted from the second electrode 136 side of the light emitting element 140, it is preferable to arrange the desiccant at a location (for example, a peripheral portion of the pixel region) that does not overlap the pixel region, since the aperture ratio is not lowered. Do.

As shown in FIG. 7B, the first shock mitigating layer 144 and the second shock mitigating the outer side (the side opposite to the light emitting element 140) of the first substrate 132 and the second substrate 133, respectively. It is good also as a structure which formed the layer 146.

The force applied to the light emitting device is diffused from the outside, and the impact alleviating layer has an effect of reducing. Therefore, as shown in FIG. 7B, the force applied locally from the outside (also referred to as external stress) is formed in the light emitting device, whereby the force applied locally can be reduced. It is possible to increase the strength and to prevent breakage and poor property.

As the first shock absorbing layer 144 and the second shock absorbing layer 146, for example, a film having a rubber elasticity of 5 GPa or more and 12 GPa or less and a fracture coefficient of 300 MPa or more can be used. In addition, it is preferable to use a material having a lower elastic modulus and a higher breaking strength than the first and second substrates 132 and 133.

The first shock absorbing layer 144 and the second shock absorbing layer 146 are preferably formed of a high strength material. Representative examples of the high strength material include polyvinyl alcohol resin, polyester resin, polyamide resin, polyethylene resin, aramid resin, polyparaphenylene benzobisoxazole resin, glass resin and the like. When the first shock absorbing layer 144 and the second shock absorbing layer 146 formed of elastic high strength materials are formed, loads such as local pressure are diffused and absorbed throughout the layer, thereby preventing damage to the light emitting device. Can be.

More specifically, as the first shock absorbing layer 144 and the second shock absorbing layer 146, an aramid resin, polyethylene naphthalate (PEN) resin, polyether sulfone (PES) resin, polyphenylene sulfide (PPS) resin , Polyimide (PI) resin, polyethylene terephthalate (PET) resin and the like can be used. In this embodiment, an aramid film using an aramid resin is used as the first shock absorbing layer 144 and the second shock absorbing layer 146.

The first substrate 132 and the first shock absorbing layer 144, or the second substrate 133 and the second shock absorbing layer 146 may be adhered by an adhesive (not shown) or the like. As the first substrate 132 or the second substrate 133, when a structure in which an organic resin is impregnated into a fiber body is used, it can be bonded by direct heating and pressure treatment without interposing an adhesive.

7B illustrates an example in which the shock absorbing layer is formed on both outer sides of the first substrate 132 and the second substrate 133, but the shock absorbing layer is the first substrate 132 or the second substrate 133. You may form only one of () outside. However, as shown in FIG. 7B, when a pair of impact mitigating layers are formed symmetrically with respect to the element portion 170, the force applied to the light emitting device can be uniformly diffused, and thus the element due to bending, bending, or the like. It is preferable because the damage of the part 170 can be prevented. Moreover, when a pair of board | substrates or a pair of shock alleviation layers are produced with the same material and the same film thickness, respectively, since the same characteristic can be provided, the force spreading effect becomes further high.

In the light emitting device shown in the present embodiment, the insulating layer 137 has a convex portion, and the convex portion is embedded in the resin film 130 to improve the adhesion between the insulating layer 137 and the resin film 130. Therefore, in the manufacturing process of a light emitting device, it becomes possible to transfer a light emitting element to a flexible substrate, without peeling off inside a light emitting element. Therefore, it becomes possible to manufacture a light emitting device with a good yield. In addition, the manufactured light emitting device can be a highly reliable light emitting device.

Further, in the light emitting device of the present embodiment, by forming a pair of structures sandwiching the element portions, the force applied locally can be reduced, thereby preventing damage to the light emitting device due to external stress, poor characteristics, or the like. It becomes possible. Therefore, it is possible to provide a highly reliable light emitting device having resistance while achieving thinness and miniaturization. In addition, in the manufacturing process, it is possible to prevent defects in shape and characteristics due to external stress and to manufacture the light emitting device with good production yield.

In addition, the present embodiment can be used in appropriate combination with any of the other embodiments.

(Embodiment 4)

In this embodiment, an example of a modular light emitting device (also referred to as an EL module) is shown using the top view and the cross-sectional view of FIG. 8.

8A is a top view illustrating an EL module manufactured by the method shown in the above embodiment, and FIG. 8B is a cross-sectional view taken along the line AA ′ of FIG. 8A. In FIG. 8A, a pixel portion 502, a source side driver circuit 504, and a gate side driver circuit 503 are formed on the first substrate 132.

508 is a wiring for transmitting a signal input to the source side driving circuit 504 and the gate side driving circuit 503, and can be formed simultaneously with the wiring included in the switching element of the pixel portion. The wiring 508 receives a video signal, a clock signal, a start signal, a reset signal, and the like from an FPC 402 (flexible printed circuit) serving as an external input terminal. Although only the FPC 402 is shown here, a printed wiring board (PWB) may be attached to the FPC. The light emitting device in the present specification shall include not only the light emitting device body but also a state in which an FPC or a PWB is attached thereto.

Next, the cross-sectional structure will be described with reference to FIG. 8B. A pixel portion 502 and a gate side driving circuit 503 are formed above the first substrate 132, and the pixel portion 502 includes a thin film transistor 106 and a first electrode electrically connected to the drain thereof. It is formed of a plurality of pixels to include. The FPC 402 serving as an external input terminal is well adhered to the wiring 508 formed on the first substrate 132 via an anisotropic conductive agent or the like. By the electroconductive particle contained in an anisotropic electrically conductive agent, the wiring formed in the wiring 508 and the FPC 402 is electrically connected. In FIG. 8, the FPC 402 is sandwiched by the first substrate 132 and the second substrate 133.

As described above, the modular light emitting device to which the FPC 402 is connected can be obtained.

In addition, this embodiment can be used in combination with another embodiment freely.

(Embodiment 5)

The light emitting device shown in the above embodiment can be used as a display portion of an electronic device. The electronic device shown in this embodiment has the light emitting device shown in the above embodiment. By the manufacturing method of the light emitting device shown in the above embodiment, it is possible to obtain a light emitting device having good production yield and high reliability, and as a result, it is possible to manufacture an electronic device as a final product with good throughput and good quality. Done.

The light emitting device shown in the above embodiment can be used, for example, in display portions of all electronic devices such as display devices, computers, cellular phones, cameras, and the like. By using the light emitting device shown in the above embodiment, it is possible to provide an electronic device that is thinner, lighter and more reliable.

9A is a television device, and includes a case 9101, a support 9102, a display portion 9103, a speaker portion 9104, a video input terminal 9305, and the like. The display portion 9103 of this television device is manufactured by using the light emitting device shown in the above embodiment. The television apparatus equipped with the light emitting device according to the above-described embodiment, which can be manufactured in a flexible, long-life, and simple manner, is capable of displaying a curved surface in the display portion 9103 and making it a highly reliable product while achieving light weight. .

9B is a computer, and includes a main body 9201, a case 9202, a display portion 9203, a keyboard 9304, an external connection port 9205, a pointing device 9206, and the like. The display portion 9203 of this computer is manufactured by using the light emitting device shown in the above embodiment. The computer equipped with the light-emitting device according to the above-described embodiment, which can be manufactured in a flexible, long-life, and simple manner, in the display portion 9203, it is possible to display a curved surface and to make a highly reliable product while realizing weight reduction.

9C shows a mobile phone, which includes a main body 9401, a case 9402, a display portion 9403, a voice input portion 9504, a voice output portion 9405, operation keys 9906, an external connection port 9407, and the like. do. The display portion 9403 of this cellular phone is manufactured by using the light emitting device shown in the above embodiment. The mobile telephone equipped with the light-emitting device according to the above embodiment, which can be manufactured in a flexible, long-life, and simple manner, can be curved in the display portion 9403, and it is possible to make a highly reliable product while realizing weight reduction. . In addition, the cellular phone in the present embodiment, which is intended to be light in weight, can have a weight suitable for carrying, even if it includes various added values, and the cellular phone has a configuration suitable for a high-performance mobile phone.

9D is a camera, a main body 9501, a display portion 9502, a case 9503, an external connection port 9504, a remote control receiver 9505, a water receiver 9506, a battery 9507, and an audio input portion 9508. ), Operation keys 9509, eyepiece 9510, and the like. The display portion 9502 of this camera is manufactured by using the light emitting device shown in the above embodiment. The camera equipped with the light-emitting device according to the above-described embodiment, which can be manufactured in a flexible, long-life, and simple manner, can display curved surfaces in the display portion 9502 and make it a highly reliable product while realizing weight reduction.

9E is a display and includes a main body 9601, a display portion 9602, an external memory insertion portion 9603, a speaker portion 9604, operation keys 9605, and the like. The main body 9601 may also be equipped with a television aerial antenna, an external input terminal, an external output terminal, a battery, or the like. The display portion 9602 of this display is manufactured by using the light emitting device shown in the above embodiment. The flexible display portion 9602 can be accommodated in the main body 9601 and is suitable for carrying. The display equipped with the light-emitting device of the said embodiment which can be made into a flexible shape can be made into the high reliability product in the display part 9602, realizing portability and light weight.

As mentioned above, the application range of the light-emitting device manufactured using the light-emitting device shown in the said embodiment is extremely wide, and it is possible to apply this light-emitting device to the electronic apparatus of all fields.

The light emitting device shown in the above embodiment can also be used as a lighting device. One form used as a lighting apparatus is demonstrated with reference to FIG.

FIG. 10 shows an example in which the light emitting device shown as an example in the above embodiment is used as the electric stand 3000 serving as the lighting device and the lighting devices 3001 and 3002 in the room. The electric stand 3000 shown in FIG. 10 is a light source, and the light emitting device which showed an example in the said embodiment is used. Therefore, weight reduction can be realized and a reliable electric stand can be achieved. In addition, by using the light emitting device shown in the above embodiment, it is possible to provide the lighting devices 3001 and 3002 that are light in weight and have high reliability. Moreover, since this light emitting device can be made flexible, it can be set as roll type illumination like the lighting apparatus 3002, for example.

In addition, it is not limited to what was illustrated in FIG. 10 as a lighting apparatus, It can be applied as lighting apparatus of various forms including illumination of a house and a public facility. In such a case, the lighting device using the light emitting device shown in the above embodiment has a light emitting medium of a thin film type, and thus can provide the market with a product having a high degree of freedom in design and focusing various designs.

In addition, the present embodiment can be used in appropriate combination with any of the other embodiments.

100 substrate 102 release layer
104: insulating layer 106: thin film transistor
108: semiconductor layer 110: gate insulating layer
112: gate electrode 114: insulating layer
116: insulating layer 118: wiring
120: insulating layer 122: electrode
124: element formation layer 130: resin film
131: adhesive sheet 132: substrate
132a: fiber body 132b: organic resin
133: substrate 134: EL layer
136: electrode 137: insulating layer
137a: insulation layer 137b: insulation layer
138: insulating layer 140: light emitting element
142: Desiccant 144: Shock Absorbing Layer
146: shock absorbing layer 170: element
200: substrate 402: FPC

Claims (24)

Flexible substrates;
A light emitting element on the flexible substrate, the light emitting element including at least a first electrode, an insulating layer covering the end of the first electrode and having a convex portion, an EL layer in contact with the first electrode, and a second electrode in contact with the EL layer; And
And a resin film covering the light emitting element, wherein the convex portion is buried. The method of claim 1,
At least one of the said flexible board | substrate and the said resin film is a light-emitting device in which the fiber body is impregnated with organic resin. The method of claim 1,
And a shock absorbing layer is formed on surfaces of at least one of the flexible substrate and the resin film. An electronic device comprising the light emitting device according to claim 1. A first flexible substrate;
A light emission comprising at least a first electrode, an insulating layer having a convex portion covering the end of the first electrode, an EL layer in contact with the first electrode, and a second electrode in contact with the EL layer, on the first flexible substrate device;
A resin film in which the convex portion is buried and covers the light emitting element; And
A light emitting device comprising a second flexible substrate formed on the resin film. The method of claim 5, wherein
At least one of the said 1st flexible board | substrate and the said 2nd flexible board | substrate is a light emitting device in which the fiber body is impregnated with organic resin. The method of claim 5, wherein
And a shock absorbing layer formed on at least one of the first flexible substrate and the second flexible substrate. The method of claim 5, wherein
A light emitting device, wherein a desiccant is disposed between the light emitting element and the second flexible substrate. The method of claim 5, wherein
Wherein the thickness of the first flexible substrate is equal to the thickness of the second flexible substrate. An electronic device comprising the light emitting device according to claim 5. A first flexible substrate;
On the first flexible substrate, at least a first electrode, a first insulating layer covering the end of the first electrode, the first insulating layer and in contact with the first insulating layer is in contact with the first insulating layer. A light emitting element comprising a second insulating layer smaller than an area, an EL layer in contact with the first electrode, and a second electrode in contact with the EL layer;
A resin film in which the second insulating layer is buried and covers the light emitting element; And
A light emitting device comprising a second flexible substrate formed on the resin film. The method of claim 11,
At least one of the said 1st flexible board | substrate and the said 2nd flexible board | substrate is a light emitting device in which the fiber body is impregnated with organic resin. The method of claim 11,
And a shock absorbing layer formed on at least one of the first flexible substrate and the second flexible substrate. The method of claim 11,
A light emitting device, wherein a desiccant is disposed between the light emitting element and the second flexible substrate. The method of claim 11,
Wherein the thickness of the first flexible substrate is equal to the thickness of the second flexible substrate. An electronic device comprising the light emitting device according to claim 11. Flexible substrates;
A first electrode on the flexible substrate;
An insulating layer covering an end portion of the first electrode and having a convex portion;
An EL layer in contact with the first electrode;
A second electrode layer in contact with the EL layer; And
And a resin layer on which the convex portion is buried. The method of claim 17,
At least one of the flexible substrate and the resin film is a light emitting device in which a fiber body is impregnated with an organic resin. The method of claim 17,
A light emitting device, wherein a shock absorbing layer is formed on at least one of the flexible substrate and the resin film. An electronic device comprising the light emitting device according to claim 17. Flexible substrates;
A light emitting element on the flexible substrate, the light emitting element including at least a first electrode, an insulating layer covering the end of the first electrode and having a convex portion, an EL layer in contact with the first electrode, and a second electrode in contact with the EL layer; And
And a resin film covering the entire surface of the insulating layer and the entire surface of the second electrode. The method of claim 21,
At least one of the said flexible board | substrate and the said resin film is a light-emitting device in which the fiber body is impregnated with organic resin. The method of claim 21,
And a shock absorbing layer is formed on surfaces of at least one of the flexible substrate and the resin film. An electronic device comprising the light emitting device according to claim 21.

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