KR101893337B1 - Light emitting device and electronic device - Google Patents

Abstract

It is an object of the present invention to provide a highly reliable light emitting device while attaining thinning. Another object of the present invention is to provide a light emitting device having a light emitting element formed on a substrate having flexibility.
A light emitting element formed on the substrate; and a resin film covering the light emitting element, wherein the insulating layer functioning as a partition wall in the light emitting element has a convex portion and the resin film buries the convex portion, The film covers the entire surface of the insulating layer and the second electrode, thereby achieving a highly reliable light emitting device while achieving thinning. In addition, the light emitting device can be manufactured with good manufacturing yield even in the manufacturing process.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device,

The present invention relates to a light emitting device having a light emitting element using electroluminescence. The present invention also relates to an electronic apparatus having the light emitting device mounted as a component.

2. Description of the Related Art In recent years, display devices in televisions, cellular phones, digital cameras, and the like are required to have flat and thin display devices. As display devices for meeting such demands, attention has been paid to display devices using light emitting devices of self-emission type. As one of the self-luminous type light emitting elements, there is a light emitting element using electroluminescence, in which a light emitting material is sandwiched by a pair of electrodes and a voltage is applied to cause light emission to the light emitting material Can be obtained.

Such a self-luminous type light emitting element is advantageous as a flat panel display element because it has advantages such as high visibility of pixels and no need of a backlight as compared with a liquid crystal monitor. Such a self-emission type light emitting device is also one of the features that can be made thinner or has a very high response speed.

In addition, as the market for light-emitting devices expands, thinning becomes an important factor for miniaturization of products, and the range of use of thinning techniques and miniaturized products is rapidly expanding. For example, Patent Document 1 proposes a flexible electroluminescence light emitting device using a peeling and transferring technique.

[Patent Document 1] JP-A-2003-174153

An aspect of the present invention is to provide a light emitting device having high reliability while attaining thinning. Another aspect of the present invention is to provide a light emitting device having a light emitting element formed on a substrate having flexibility.

One embodiment of the present invention has a flexible substrate, a light emitting element formed on the substrate, and a resin film covering the light emitting element. The light emitting element includes at least a first electrode, an insulating layer covering the end portion of the first electrode and having a convex portion, an EL layer in contact with the first electrode, and a second electrode in contact with the EL layer, The resin film covering the element buries the convex portion. That is, the resin film covers the entire surface of the insulating layer and the second electrode.

An embodiment of the present invention has a first substrate having flexibility, a light emitting element formed on the first substrate, a resin film covering the light emitting element, and a flexible second substrate formed on the resin film. The light emitting element includes at least a first electrode, an insulating layer covering the end portion of the first electrode and having a convex portion, an EL layer in contact with the first electrode, and a second electrode in contact with the EL layer, The resin film covering the element buries the convex portion. That is, the resin film covers the entire surface of the insulating layer and the second electrode.

An embodiment of the present invention has a first substrate having flexibility, a light emitting element formed on the first substrate, a resin film covering the light emitting element, and a flexible second substrate formed on the resin film. A second insulating layer which is in contact with the first insulating layer and whose contact area is smaller than the area of the first insulating layer; An EL layer in contact with the first electrode, and a second electrode in contact with the EL layer, and the resin film covering the light emitting element buries the second insulating layer. That is, the resin film covers the entire surface of the second insulating layer and the second electrode.

In the above-described light emitting device as one embodiment of the present invention, one or both of the first and second substrates may be a structure in which a fibrous body is impregnated with an organic resin.

In this specification, the light-emitting element includes a device whose luminance is controlled by current or voltage, and specifically includes an organic EL (Electro Luminescence) element, an inorganic EL element, and the like.

The light emitting device disclosed in this specification may be a passive matrix type or an active matrix type.

Note that the light emitting device in this specification includes an image display device, a light emitting device, or a light source (including a lighting device). A module in which a connector, for example, a flexible printed circuit (FPC), a tape automated bonding (TAB), or a tape carrier package (TCP) is mounted on a panel, a module in which a printed wiring board is provided on the end of a TAB tape or TCP, A module in which an IC (integrated circuit) is directly mounted by a COG (Chip On Glass) method is also included in the light emitting device.

Also, terms used in the present specification, for example, " same ", " same degree ", and the like mean a degree of reasonable departure of a term that is changed to some extent so that the final result is not significantly changed. These terms should be interpreted as including at least plus or minus 5% deviation of the term to some extent, provided that the deviation does not negate the meaning of the term to some extent.

Note that, in this specification, the ordinal numbers attached to the first, second, etc. are used for convenience and do not represent the order of steps or the order of lamination. In addition, the specification does not indicate a unique name for specifying the invention in this specification.

An aspect of the present invention can provide a highly reliable light emitting device while attaining thinning. In addition, one form of the present invention can prevent defects in shape and characteristics even in a manufacturing process of a light emitting device, and thus a light emitting device can be manufactured with a good production yield.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a view for explaining a light emitting device according to an embodiment of the present invention;
2 is a view for explaining a light emitting device according to an embodiment of the present invention.
3 is a view for explaining a manufacturing method of a light emitting device according to an embodiment of the present invention.
4 is a view for explaining a manufacturing method of a light emitting device according to an embodiment of the present invention.
5 is a view for explaining a manufacturing method of a light emitting device according to an embodiment of the present invention.
6 is a view showing an example of a structure of a light emitting element;
7 is a view showing an example of a structure of a light emitting device according to one embodiment of the present invention.
8 is a view for explaining a light emitting device according to an embodiment of the present invention.
9 is a view for explaining an application example of a light emitting device according to an embodiment of the present invention.
10 is a view for explaining an application example of a light emitting device according to an embodiment of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that various changes can be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited to the description of the embodiments described below. Note that, in the structures of the embodiments described below, the same reference numerals are commonly used for the same parts or portions having the same functions, and repeated description thereof will be omitted.

(Embodiment 1)

In the present embodiment, an example of a light emitting device will be described in detail with reference to Fig.

Fig. 1 shows a display unit of the light emitting device of the present embodiment. The light emitting device of the present embodiment shown in Fig. 1 has an element portion 170 formed on a substrate 200. Fig. Further, the element portion 170 is covered with the resin film 130.

As the substrate 200, a flexible substrate can be used. For example, a substrate made of a resin such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyacrylonitrile resin, polyimide resin, A polycarbonate resin (PC), a polyether sulfone resin (PES), a polyamide resin, a cycloolefin resin, a polystyrene resin, a polyamideimide resin and a polyvinyl chloride resin can be suitably used. Alternatively, as the substrate 200, a structure in which a fibrous body is impregnated with an organic resin can be used. However, in the case of extracting light from the substrate 200 side, a substrate having translucency is used.

On the substrate 200, an element portion 170 is formed. The element unit 170 has at least a light emitting element 140 and a switching element for applying an electric potential to the light emitting element 140. The switching element may be a transistor (for example, a bipolar transistor or a MOS transistor), a diode (for example, a PN diode, a PIN diode, a Schottky diode, a Metal Insulator Metal (MIM) diode, a Metal Insulator Semiconductor (MIS) A diode-connected transistor, etc.), a thyristor, or the like can be used. Or a combination of them can be used as a switching element. In the present embodiment, the thin film transistor 106 is used as the switching element. Further, the light emitting device may be integrated with the driver, and the element portion 170 may include the driving circuit portion. In addition, a drive circuit may be formed outside the sealed substrate.

The light emitting element 140 has a first electrode 122, an insulating layer 137 covering an end portion of the first electrode, an EL layer 134, and a second electrode 136. One of the first electrode 122 and the second electrode 136 is used as an anode and the other is used as a cathode.

The EL layer 134 constituting the light emitting element has at least a light emitting layer. The EL layer 134 may have a laminated structure including a hole injecting layer, a hole transporting layer, an electron transporting layer, and an electron injecting layer in addition to the light emitting layer. As the EL layer 134, any of a low-molecular-weight material and a high-molecular-weight material may be used. The material for forming the EL layer 134 includes not only an organic compound material but also an inorganic compound.

When the light emitting device is a full color display, the EL layer 134 may be selectively formed using a material capable of emitting red (R), green (G), and blue (B) In the case of display, the EL layer 134 may be formed using a material that exhibits at least one color. Further, an EL layer and a color filter (not shown) may be used in combination. Even when a single color light emitting layer (for example, a white light emitting layer) is used by a color filter, full color display becomes possible. For example, in the case of combining an EL layer using a material capable of emitting white light (W) and a color filter, it is possible to display full color display with four subpixels of pixels which do not form color filters, .

The insulating layer 137 has a convex portion. In this embodiment, the insulating layer 137 shows a structure in which two layers of the first insulating layer 137a and the second insulating layer 137b are laminated. The insulating layer 137 is formed of an inorganic material such as an oxide of silicon or a nitride of silicon, an organic material such as polyimide, polyamide, benzocyclobutene, acrylic, or epoxy, or a siloxane material. The first insulating layer 137a and the second insulating layer 137b constituting the insulating layer 137 may be formed using the same material or may be formed using respective materials.

The element portion 170 formed on the substrate 200 is covered with the resin film 130. As the resin film 130, for example, an acrylic resin, a polyimide resin, a melamine resin, a polyester resin, a polycarbonate resin, a phenol resin, an epoxy resin, a polyacetal, a polyether, a polyurethane, a polyamide (nylon) An organic compound such as a resin, a diaryl phthalate resin, an inorganic siloxane polymer containing a Si-O-Si bond in a compound composed of silicon, oxygen, and hydrogen formed as a starting material from a siloxane polymer material typified by silica glass, An organosiloxane polymer in which hydrogen bonded to silicon represented by a polymer, an alkylsilsesquioxane polymer, a hydrogenated silsesquioxane polymer, a hydrogenated alkylsilsesquioxane polymer is substituted by an organic group such as methyl or phenyl, or the like can be used. Or a structure in which a fibrous body is impregnated with an organic resin as the resin film 130 may be used.

When light is extracted from the side of the second electrode 136 of the light emitting element 140, the resin film 130 is formed by using a material having translucency at least on the display surface of the light emitting device, And is formed to have a film thickness. In the case where light is extracted only from the first electrode 122 side of the light emitting element 140, the resin film 130 having a light transmitting property may not be used.

In the light emitting device 140 included in the light emitting device shown in this embodiment mode, the insulating layer 137 functioning as a bank (bank) is an insulating layer having a convex portion. 1, an insulating layer 137 having a first insulating layer 137a and a second insulating layer 137b formed on the first insulating layer 137a is shown. However, the shape of the insulating layer is not limited to this But it may have two or more convex portions. Since the insulating layer 137 has a convex portion and the convex portion is embedded in the resin film 130 to improve the adhesion between the insulating layer 137 and the resin film 130, Can be used as a highly reliable light emitting device. Further, when the adhesion between the insulating layer 137 and the resin film 130 is improved, it becomes possible to transfer the light emitting element to the flexible substrate without causing the peeling in the light emitting element in the manufacturing process of the light emitting device . Therefore, a highly reliable light emitting device can be manufactured with good yield.

Further, by thinning the thickness of the element section 170, it becomes possible to bend the light emitting device. Therefore, the light emitting device of the present embodiment can be bonded to various substrates, and when bonded to a substrate having a curved surface, a display having a curved surface, illumination with a curved surface, or the like can be realized. Further, by making the thickness of the element portion 170 thin, the light emitting device can be made lighter.

The present embodiment can be used in appropriate combination with other embodiments.

(Embodiment 2)

In this embodiment, another example of the light emitting device will be described in detail with reference to FIG. In addition, the description of the constitution overlapping the embodiment 1 will be omitted or simplified.

Fig. 2 shows a display unit of the light emitting device of the present embodiment. The light emitting device of this embodiment shown in Fig. 2 has an element portion 170 sandwiched between the first substrate 132 and the second substrate 133. A resin film 130 is formed between the element portion 170 and the second substrate 133. In Fig. 2, the resin film 130 can be formed using the same material as the resin film 130 shown in the first embodiment.

As the first substrate 132 and the second substrate 133, a flexible substrate may be used. For example, a polyester resin such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), a polyacrylonitrile A polyimide resin, a polymethyl methacrylate resin, a polycarbonate resin (PC), a polyether sulfone resin (PES), a polyamide resin, a cycloolefin resin, a polystyrene resin, a polyamideimide resin, It can be suitably used. However, at least a substrate which is located in the extraction direction of the light of the light emitting element is used as the substrate having the light transmitting property.

The first substrate 132 and the second substrate 133 are preferably made of a material having a low coefficient of thermal expansion and a material having the same degree of thermal expansion coefficient. It is further preferable that the first substrate 132 and the second substrate 133 are made of the same material. If the thermal expansion coefficient of the first substrate 132 and the second substrate 133 is 20 ppm / ° C or less, heat resistance of the light emitting device is improved, which is preferable.

In the present embodiment, as the first substrate 132 and the second substrate 133, a structure in which the fibrous body 132a is impregnated with the organic resin 132b is used. It is preferable that the structure used as the first substrate 132 and the second substrate 133 is made of a material having an elastic modulus of 13 GPa or more and a breaking coefficient of less than 300 MPa. It is preferable that the first substrate 132 and the second substrate 133 have a thickness of 5 m or more and 50 m or less and the first substrate 132 and the second substrate 133 have the same thickness . Since the first substrate 132 and the second substrate 133 have the same film thickness, the element portion 170 can be disposed at the center of the light emitting device. When the film thickness of the first and second substrates is 5 占 퐉 or more and 50 占 퐉 or less, the film thickness of the first substrate and the second substrate is thicker than the film thickness of the element section, It is possible to provide a light emitting device which is resistant to bending stress.

In the present embodiment, the fibrous bodies 132a in the structure used as the first substrate 132 and the second substrate 133 are woven with a warp yarn at regular intervals and a weft yarn at regular intervals. These warp and weft yarns have areas where no warp and weft yarns are present. The ratio of the organic resin 132b impregnated in the fibrous body 132a is increased, and the adhesion between the fibrous body 132a and the light emitting element can be enhanced.

The fibrous body 132a may have a high density of the warp and weft yarns and a low ratio of the regions where the warp yarns and weft yarns are not present.

In addition, in order to increase the penetration rate of the organic resin into the fiber bundle (yarn bundle), the fiber may be subjected to surface treatment. For example, there are a corona discharge treatment for activating the fiber surface, a plasma discharge treatment and the like. Further, there is a surface treatment using a silane coupling agent and a titanate coupling agent.

Further, a structure in which a fibrous body is impregnated with an organic resin may be laminated a plurality of layers. In this case, a structure may be formed by stacking a plurality of structures in which a single-layer fibrous body is impregnated with an organic resin, or a structure in which a plurality of stacked fibrous bodies are impregnated with an organic resin is referred to as a first substrate 132 or a second substrate (133). When a plurality of structures in which a single-layer fibrous body is impregnated with an organic resin are laminated, another layer may be sandwiched between the respective structures.

The element portion 170 sandwiched between the first substrate 132 and the second substrate 133 has at least a light emitting element 140 and a switching element for applying a potential to the light emitting element 140. In the present embodiment, the thin film transistor 106 is used as the switching element. Further, the light emitting device may be integrated with the driver, and the element portion 170 may include the driving circuit portion. In addition, a drive circuit may be formed outside the sealed substrate.

The light emitting element 140 has a first electrode 122, an insulating layer 137 covering an end portion of the first electrode, an EL layer 134, and a second electrode 136. One of the first electrode 122 and the second electrode 136 is used as an anode and the other is used as a cathode. The light emitting device 140 of FIG. 2 may have the same structure as the light emitting device 140 of the first embodiment.

The insulating layer 137 has a convex portion. In this embodiment, the insulating layer 137 shows a structure in which two layers of the first insulating layer 137a and the second insulating layer 137b are laminated. The insulating layer 137 is formed of an inorganic material such as an oxide of silicon or a nitride of silicon, an organic material such as polyimide, polyamide, benzocyclobutene, acrylic, or epoxy, or a siloxane material. The first insulating layer 137a and the second insulating layer 137b constituting the insulating layer 137 may be formed using the same material or may be formed using respective materials.

The insulating layer 137 has a convex portion and the resin film 130 buries the convex portion so that the resin film 130 covers the entire surface of the insulating layer 137 and the second electrode 136 The insulating layer 137, and the resin film 130 can be improved. Therefore, the manufactured light emitting device can be a highly reliable light emitting device. Further, when the adhesion between the insulating layer 137 and the resin film 130 is improved, it becomes possible to transfer the light emitting element to the flexible substrate without causing the peeling in the light emitting element in the manufacturing process of the light emitting device . Therefore, a highly reliable light emitting device can be manufactured with good yield.

In the present embodiment, the fibrous body 132a included in the structure serving as the first and second substrates is formed of high-strength fiber, and the high-strength fiber has a high tensile modulus or a high Young's modulus. Therefore, even if local pressure such as pressure or line pressure is applied to the light emitting device, the high-strength fiber is not stretched, and the pressurized force is dispersed throughout the fiber body 132a and curved in the entire light emitting device. As a result, even if local pressurization is applied, the curvature generated in the light emitting device becomes large in radius of curvature, and cracks do not occur in the light emitting element, the wiring and the like sandwiched by the pair of structures, and the breakage of the light emitting device can be reduced .

Further, by thinning the thickness of the element section 170, it becomes possible to bend the light emitting device.

Therefore, the light emitting device of this embodiment can be bonded to various substrates, and when bonded to a substrate having a curved surface, a display and illumination having a curved surface can be realized. Further, by reducing the thickness of the element section 170, the light emitting device can be made lighter.

The present embodiment can be used in appropriate combination with other embodiments.

(Embodiment 3)

In this embodiment mode, an example of a manufacturing method of the light emitting device shown in Embodiment Mode 2 will be described in detail with reference to the drawings.

First, a release layer 102 is formed on one surface of a substrate 100, and then an insulating layer 104 is formed (see FIG. 3A). The peeling layer 102 and the insulating layer 104 can be formed continuously. By continuous formation, impurities can be prevented from being mixed because they are not exposed to the atmosphere.

As the substrate 100, a glass substrate, a quartz substrate, a metal substrate, a stainless steel substrate, or the like can be used. For example, by using a rectangular glass substrate having one side of 1 meter or more, the productivity can be remarkably improved.

In this step, the release layer 102 is formed on the entire surface of the substrate 100. However, if necessary, after the release layer 102 is formed on the entire surface of the substrate 100, The release layer 102 may be selectively removed to form a release layer only in a desired area. Although the release layer 102 is formed in contact with the substrate 100, an insulating layer such as a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or a silicon nitride oxide film is formed so as to be in contact with the substrate 100 , The release layer 102 may be formed so as to be in contact with the insulating layer.

The release layer 102 may be formed of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), or the like in a thickness of 30 nm to 200 nm by a sputtering method, a plasma CVD method, (Ni), Co, Zr, Zn, Ru, Rh, Pd, Os, Ir, and Si ) Or an alloy material containing an element as a main component or a compound material containing an element as a main component is formed by laminating a single layer or a plurality of layers. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline. Here, the coating method is a method for forming a film by discharging a solution onto a workpiece, and includes, for example, a spin coating method and a droplet discharging method. The droplet discharging method is a method in which droplets of a composition containing fine particles are discharged from fine holes to form a pattern of a predetermined shape.

When the release layer 102 has a single-layer structure, preferably a layer comprising tungsten, molybdenum, or a mixture of tungsten and molybdenum is formed. Or a layer comprising an oxide or an oxynitride of tungsten, or a layer comprising an oxide or an oxynitride of a mixture of tungsten and molybdenum. The mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

When the release layer 102 has a laminated structure, a metal layer is preferably formed as the first layer and a metal oxide layer is formed as the second layer. For example, a layer containing tungsten, molybdenum, or a mixture of tungsten and molybdenum is formed as the first metal layer, and a layer containing tungsten, molybdenum, or a mixture of tungsten and molybdenum, tungsten, Molybdenum nitride, tungsten, or an oxynitride of a mixture of tungsten and molybdenum, or tungsten, or a nitride oxide of a mixture of tungsten and molybdenum.

When the laminated structure of the metal layer as the first layer and the metal oxide layer as the second layer is formed as the release layer 102, a layer containing tungsten is formed as a metal layer, and an insulating layer formed of oxide is formed thereon , A layer including an oxide of tungsten as a metal oxide layer may be formed at the interface between the layer including tungsten and the insulating layer. The surface of the metal layer may be treated with a solution having a strong oxidizing power such as a thermal oxidation treatment, an oxygen plasma treatment, or ozone water to form a metal oxide layer.

The insulating layer 104 functions as a protective layer and prevents cracks or damage from occurring in the semiconductor element or wiring in the subsequent peeling step so as to facilitate peeling at the interface with the peeling layer 102 in the subsequent peeling step, . For example, the insulating layer 104 is formed as a single layer or multilayer using an inorganic compound by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. Representative examples of the inorganic compound include silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide and the like. Further, by using silicon nitride, silicon oxynitride, silicon oxynitride, or the like as the insulating layer 104, it is possible to prevent moisture, oxygen, and other gases from intruding into an element layer formed later from the outside. The thickness of the insulating layer functioning as a protective layer is preferably 10 nm or more and 100 nm or less, or 100 nm or more and 700 nm or less.

Next, a thin film transistor 106 is formed on the insulating layer 104 (see FIG. 3B). The thin film transistor 106 is composed of a semiconductor layer 108 having at least a source region, a drain region and a channel forming region, a gate insulating layer 110, and a gate electrode 112.

The semiconductor layer 108 is preferably formed to have a thickness of 10 nm or more and 100 nm or less, more preferably 20 nm or more and 70 nm or less. As the material for forming the semiconductor layer 108, an amorphous semiconductor produced by a vapor phase growth method or a sputtering method using a semiconductor material typified by silane or germane, a polycrystalline semiconductor obtained by crystallizing the amorphous semiconductor using light energy or heat energy, Or a microcrystalline semiconductor, a semiconductor containing an organic material as a main component, or the like can be used. When a crystalline semiconductor layer is used for the semiconductor layer, the crystalline semiconductor layer may be formed by a method such as laser light irradiation, thermal annealing (RTA) or furnace annealing, or a combination of these methods . In the heat treatment, a crystallization method using a metal element such as nickel having an effect of promoting the crystallization of the silicon semiconductor can be applied.

As the material of the semiconductor, compound semiconductors such as GaAs, InP, SiC, ZnSe, GaN, SiGe and the like can be used in addition to a group of silicon (Si) and germanium (Ge) In addition, oxide semiconductors such as zinc oxide (ZnO), tin oxide (SnO ₂ ), magnesium oxide zinc, gallium oxide, indium oxide, and oxide semiconductors such as oxide semiconductors can be used. For example, an oxide semiconductor composed of zinc oxide, indium oxide, and gallium oxide may be used. When zinc oxide is used for the semiconductor layer, Y ₂ O ₃ , Al ₂ O ₃ , TiO ₂ , a lamination thereof, or the like may be used as the gate insulating layer, and ITO, Au , Ti, or the like may be used. In addition, In and Ga may be added to ZnO.

The gate insulating layer 110 is formed of an inorganic insulating material such as silicon oxide and silicon oxynitride with a thickness of 5 nm or more and 200 nm or less, preferably 10 nm or more and 100 nm or less.

The gate electrode 112 may be formed of a polycrystalline semiconductor doped with a metal or a conductive impurity. When a metal is used, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al) Further, a metal nitride obtained by nitriding a metal can be used. Or a structure in which a first layer made of the metal nitride and a second layer made of the metal are laminated. At this time, the first layer may be made of a metal nitride, which may be a barrier metal. That is, it is possible to prevent the metal of the second layer from diffusing into the gate insulating layer or the semiconductor layer below the gate insulating layer. In the case of a laminated structure, the end of the first layer may protrude outward from the end of the second layer.

The thin film transistor 106 formed by combining the semiconductor layer 108, the gate insulating layer 110 and the gate electrode 112 can be applied to various structures such as a single drain structure, an LDD (lightly doped drain) structure, and a gate overlap drain structure can do. Here, a thin film transistor of an LDD structure in which a low concentration impurity region is formed by using an insulating layer (also referred to as a " sidewall ") in contact with the side surface of the gate electrode 112 is shown. Alternatively, a multi-gate structure in which transistors to which a gate voltage of the same potential is applied are connected in series, or a thin film transistor formed by a dual gate structure in which upper and lower portions of the semiconductor layer are sandwiched by gate electrodes have. Though the example of the top gate structure of the top gate structure is shown in the drawing, the bottom gate structure or other known structure of the thin film transistor may be used.

It is also possible to use a thin film transistor in which a metal oxide or an organic semiconductor material is used for the semiconductor layer as the thin film transistor. Representative examples of metal oxides include oxides of zinc oxide and zinc gallium indium.

In the case of forming a thin film transistor to be fabricated in a process at a relatively low temperature (less than 500 占 폚) as the thin film transistor, an alloy material containing molybdenum (Mo) or molybdenum as a main component or a compound material containing a molybdenum element as a main component It is preferable to form the release layer 102 by laminating a single layer or a plurality of layers.

Next, a wiring 118 electrically connected to the source region and the drain region of the thin film transistor 106 is formed, and a first electrode 122 electrically connected to the wiring 118 is formed (see FIG. 3C) ).

Here, insulating layers 114 and 116 are formed so as to cover the thin film transistor 106, and wirings 118, which can also function as a source electrode and a drain electrode, are formed on the insulating layer 116. Thereafter, an insulating layer 120 is formed on the wiring 118, and a first electrode 122 is formed on the insulating layer 120.

The insulating layers 114 and 116 function as an interlayer insulating layer. The insulating layers 114 and 116 can be formed using an inorganic material such as an oxide of silicon or a nitride of silicon by a CVD method, a sputtering method, an SOG method, a droplet discharging method, a screen printing method, , Epoxy, or the like, a siloxane material, or the like. Here, the first insulating layer 114 may be formed of a silicon oxynitride film, and the second insulating layer 116 may be formed of a silicon oxynitride film.

The wiring 118 may be formed of a low resistance material such as aluminum (Al) such as a lamination structure of titanium (Ti) and aluminum (Al), a lamination structure of molybdenum (Mo) Mo) and the barrier metal using a refractory metal material.

The insulating layer 120 may be formed of an inorganic material such as an oxide of silicon or a nitride of silicon, a metal such as polyimide, polyamide, benzocyclobutene, acrylic, epoxy, or the like by CVD, sputtering, SOG, droplet discharging, Or a siloxane material or the like, as a single layer or a laminate. Here, the insulating layer 120 is formed of epoxy by a screen printing method.

The first electrode 122 is an electrode used as a cathode or a cathode of a light emitting element. When used as an anode, it is preferable to use a material having a large work function. For example, a light-transmitting conductive film formed by a sputtering method using an indium tin oxide film, an indium tin oxide film containing silicon, and a target obtained by mixing indium oxide with 2 to 20 wt% of zinc oxide (ZnO) In addition to a single layer film such as a zinc oxide (ZnO) film, a titanium nitride film, a chromium film, a tungsten film, a Zn film and a Pt film, a film mainly composed of titanium nitride and aluminum, A three-layer structure of a titanium nitride film, or the like can be used. In addition, when the positive electrode has a laminated structure, resistance as a wiring is low, and good ohmic contact can be obtained.

It is preferable to use a material (Al, Ag, Li, Ca or their alloys MgAg, MgIn, AlLi, CaF ₂ , or calcium nitride) having a small work function when used as a cathode. When the first electrode 122 used as a cathode is made transparent, a metal thin film having a thin film thickness and a conductive film having a light transmitting property (an indium tin oxide film, an indium tin oxide film containing silicon, A conductive film having a light-transmitting property, zinc oxide (ZnO), etc.) formed by a sputtering method using a target in which indium oxide is mixed with 2 to 20 wt% of zinc oxide (ZnO).

Subsequently, the first insulating layer 137a is formed so as to cover the end portion of the first electrode 122 (see FIG. 3D). In the present embodiment, the first insulating layer 137a is formed by using a positive-type photosensitive acrylic resin film. It is preferable that a curved surface having a curvature is formed at an upper end portion or a lower end portion of the first insulating layer 137a so that the first insulating layer 137a can have good coverage. For example, in the case of using a positive type photosensitive acrylic as the material of the first insulating layer 137a, it is preferable to have a curved surface having a radius of curvature (0.2 to 3 m) only in the upper end portion of the first insulating layer 137a Do. As the first insulating layer 137a, either a negative type which is insoluble in an etchant by photosensitive light or a positive type which is soluble in an etchant by light can be used. In addition, as the first insulating layer 137a, an inorganic material such as an oxide of silicon or a nitride of silicon, an organic material such as an epoxy, a polyimide, a polyamide, a polyvinyl phenol, a benzocyclobutene, or a siloxane material such as a siloxane resin Or a laminated structure.

Subsequently, a second insulating layer 137b is formed on the first insulating layer 137a. Similarly to the first insulating layer 137a, the second insulating layer 137b may be formed of an inorganic material such as an oxide of silicon or a nitride of silicon, an organic material such as polyimide, polyamide, benzocyclobutene, acrylic, epoxy, And the like. The first insulating layer 137a and the second insulating layer 137b may be formed using the same material, or may be formed using respective materials. The contact area between the second insulating layer 137b and the first insulating layer 137a is smaller than the area on the first insulating layer 137a and the second insulating layer 137b is formed on the first insulating layer 137a It is preferable to form it so as to enter. In addition to the photolithography method, the second insulating layer 137b can be formed by a screen printing method, an inkjet method, or the like. Thus, the insulating layer 137 composed of the two layers of the first insulating layer 137a and the second insulating layer 137b is formed.

It is also possible to obtain a dense film by modifying the surface of the insulating layer 137 by oxidizing or nitriding the insulating layer 137 by subjecting the insulating layer 137 to plasma treatment. By modifying the surface of the insulating layer 137, the strength of the insulating layer 137 is improved, so that it is possible to reduce physical damage such as cracks occurring at the time of forming the openings or the like or the film thickness at the time of etching.

Next, an EL layer 134 is formed on the first electrode 122. Then, As the EL layer 134, any of a low-molecular-weight material and a high-molecular-weight material may be used. In addition, the material for forming the EL layer 134 includes not only an organic compound material but also a constitution including a part of an inorganic compound. The EL layer 134 may have a single-layer structure including at least a light-emitting layer and one light-emitting layer, or a laminate structure including layers having different functions. For example, functional layers having respective functions such as a hole injecting layer, a hole transporting layer, a carrier blocking layer, an electron transporting layer, and an electron injecting layer may be appropriately combined in addition to the light emitting layer. It is also possible to include a layer having two or more functions of the respective layers simultaneously.

The formation of the EL layer 134 can be performed by a wet method or a dry method, such as a vapor deposition method, an ink jet method, a spin coating method, a dip coating method, and a nozzle printing method.

Subsequently, a second electrode 136 is formed on the EL layer 134. Thus, the light emitting device 140 in which the first electrode 122, the insulating layer 137 covering the end portion of the first electrode 122, the EL layer 134, and the second electrode 136 are stacked is formed . In addition, the first electrode 122 and the second electrode 136 use one direction as an anode and the other as a cathode.

In this embodiment, the first electrode 122 is used as an anode, and the EL layer 134 has a structure in which a hole injecting layer, a hole transporting layer, a light emitting layer, and an electron injecting layer are sequentially stacked from the side of the first electrode 122 do. As the light emitting layer, various materials can be used. For example, a fluorescent compound that emits fluorescence or a phosphorescent compound that emits phosphorescence may be used.

When the first electrode 122 is used as a cathode, the thin film transistor 106 connected to the first electrode 122 is preferably an n-channel transistor.

Subsequently, an insulating layer 138 is formed on the second electrode 136 so as to cover the light emitting element 140 (see FIG. 4A). Thus, the element portion 170 including the thin film transistor 106 and the light emitting element 140 can be formed. The insulating layer 138 functions as a protective layer of the light emitting element 140 and is formed in order to prevent water and damage to the EL layer 134 in the subsequent pressing process of the second substrate or the like. It also functions as a heat insulating layer for reducing the heating of the EL layer 134 when the subsequent second substrate is pressed. For example, the insulating layer 138 is formed as a single layer or a multilayer using an inorganic compound by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. Representative examples of the inorganic compound include silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide and the like. Further, it is preferable to use a film having good coverage as the insulating layer 138. [ The insulating layer 138 may be a laminated film of an organic compound and an inorganic compound. Also, by using silicon nitride, silicon oxynitride, silicon oxynitride, or the like as the insulating layer 138, it is possible to prevent moisture, oxygen, and other gases from intruding into an element layer formed later from the outside. The thickness of the insulating layer functioning as the protective layer is preferably 10 nm or more and 1000 nm or less, or 100 nm or more and 700 nm or less.

Next, as shown in Fig. 4B, a resin film 130 is formed on the element portion 170. Then, as shown in Fig. The resin film 130 can be formed, for example, by applying the composition using a coating method and drying and heating. Since the resin film 130 functions as a protective layer of the light emitting device in the subsequent peeling step, it is preferable that the resin film 130 has a small unevenness on the surface. Further, a material having good adhesion to the insulating layer 138 shall be used. Specifically, when the resin film 130 is formed using a coating method, for example, an acrylic resin, a polyimide resin, a melamine resin, a polyester resin, a polycarbonate resin, a phenol resin, an epoxy resin, Oxygen, and hydrogen formed as a starting material from a siloxane polymer-based material represented by an organic compound such as an ether, a polyurethane, a polyamide (nylon), a furan resin, or a diaryl phthalate resin, Si bonded to each other, or hydrogen bonded to silicon represented by alkyl siloxane polymer, alkyl silsesquioxane polymer, hydrogenated silsesquioxane polymer or hydrogenated alkylsilsesquioxane polymer is substituted by an organic group such as methyl or phenyl Organosiloxane polymer, and the like. Or a structure in which a fibrous body is impregnated with an organic resin as the resin film 130 may be used.

When light is extracted from the side of the second electrode 136 of the light emitting element 140, the resin film 130 is formed by using a material having translucency at least on the display surface of the light emitting device, And is formed to have a film thickness. In the case where light is extracted only from the first electrode 122 side of the light emitting element 140, the resin film 130 having a light transmitting property may not be used.

Subsequently, the adhesive sheet 131 is bonded to the resin film 130 to form the adhesive sheet. The adhesive sheet (131) is a sheet which can be peeled off by light or heat. The adhesive sheet 131 can be easily peeled off and the stress applied to the element section 170 before and after peeling can be reduced and the breakage of the thin film transistor 106 and the light emitting element 140 can be suppressed . In the case of forming a plurality of light emitting device panels from a single substrate (multifaceted), before the adhesive sheet 131 is formed, etching is performed at the end of each region where the panel is formed, It is possible to separate each element constituting the panel of FIG. Or may be sandwiched between the first substrate and the second substrate and then separated by element parts by dicing or the like.

Next, the element portion 170 including the thin film transistor 106, the light emitting element 140 and the like is peeled from the substrate 100 (see FIG. 4C). As the peeling method, various methods can be used. For example, when the metal oxide layer is formed as the peeling layer 102 on the side in contact with the insulating layer 104, the metal oxide layer is made weak by crystallization, and the element portion 170 is peeled off from the substrate 100 . Further, a substrate having translucency may be used as the substrate 100, and a film containing nitrogen, oxygen, hydrogen or the like (for example, an amorphous silicon film containing hydrogen, a hydrogen containing alloy film, oxygen A laser beam is irradiated from the substrate 100 to the peeling layer 102 to evaporate nitrogen, oxygen or hydrogen contained in the peeling layer so as to vaporize the substrate 100 and the peeling layer 102, A method of peeling off can be used. Or the peeling layer 102 is removed by etching, the element portion 170 may be peeled off from the substrate 100.

Or a method of mechanically polishing and removing the substrate 100 or a method of removing the substrate 100 by etching with a fluorine halogen gas such as NF ₃ , BrF ₃ , or ClF ₃ or HF. In this case, the peeling layer 102 may not be used. Further, the release layer 102 as an insulating layer 104 to form a metal oxide film on the side in contact with, flower vulnerable by the metal oxide film to crystallize, and some solutions or NF of more release layer _{102. 3,} BrF ₃ , ClF _3, or the like, and then peeled off from the weakened metal oxide layer.

It is also possible to form a groove for exposing the peeling layer 102 by using a laser beam, etching with a gas or a solution, or a sharp knife or a knife, and the peeling layer 102 and the protective layer The element portion 170 may be peeled from the substrate 100 at the interface of the insulating layer 104 functioning. As the peeling method, for example, a mechanical force may be applied (such as peeling off into a hand or a grip of a person, peeling off while rotating the roller, etc.). The element portion 170 may be peeled off from the peeling layer 102 by dripping the liquid into the groove and allowing the liquid to permeate the interface between the peeling layer 102 and the insulating layer 104. Further, a method of introducing a fluorinated gas such as NF ₃ , BrF ₃ , or ClF _{3 into the} groove, etching away the peeling layer with a fluorinated gas, and peeling the element portion 170 from the substrate having the insulating surface may be used . Further, it may be peeled while applying a liquid such as water when peeling off.

As another peeling method, when the peeling layer 102 is formed of tungsten, peeling can be performed while etching the peeling layer with a mixed solution of aqueous ammonia and hydrogen peroxide.

In general, the adhesion between the EL layer including an organic compound and the second electrode formed from an inorganic compound is very low, and peeling may occur from the interface between the EL layer and the second electrode in the peeling step. However, in the light emitting device 140 shown in this embodiment mode, the insulating layer 137 has a convex portion, and the resin film 130 buries the insulating layer 137 (or the convex portion of the insulating layer 137) . That is, the resin film 130 covers the insulating layer 137 (or the convex portion of the insulating layer 137) and the entire surface of the second electrode. Since the insulating layer 137 acts like a wedge in the resin film 130 (so-called anchor effect), the adhesion between the resin film 130 and the insulating layer 137 is enhanced. Therefore, in the peeling step, the peeling is not easily caused at the interface between the EL layer 134 and the second electrode 136, and the element portion 170 can be peeled from the substrate 100 with a high production yield.

Next, the first substrate 132 is formed on the peeling side (the surface of the insulating layer 104 exposed by the peeling) of the peeled element portion 170. In this embodiment, as the first substrate 132, a first structure in which the fibrous body 132a is impregnated with the organic resin 132b is formed (see Fig. 5A). Such a structure is also referred to as a prepreg.

The prepreg is obtained by impregnating a fibrous body with a varnish diluted with an organic solvent of a matrix resin, followed by drying to volatilize the organic solvent to semi-cure the matrix resin. The thickness of the structure is preferably from 10 탆 to 100 탆, or from 10 탆 to 30 탆. By using the structure having such a thickness, a light emitting device which is thin and can be bent can be manufactured.

As the organic resin 132b, a thermally variable resin, an ultraviolet curable resin, or the like can be used. Specifically, an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide triazine resin or a cyanate resin can be used . Further, a thermoplastic resin such as a polyphenylene oxide resin, a polyether imide resin, or a fluorine resin may be used. By using the organic resin, the fibrous body can be fixed to the semiconductor integrated circuit by heat treatment. The higher the glass transition temperature of the organic resin 132b is, the more preferable it is because the organic resin 132b is less likely to be destroyed against local pressurization.

The high thermal conductive filler may be dispersed in the inner layer of the organic resin 132b or the fibrous body 132a. Examples of the high thermal conductive filler include aluminum nitride, boron nitride, silicon nitride, and alumina. The high thermal conductive filler includes metal particles such as silver and copper. Since the conductive filler is contained in the organic resin or fiber bundle, the heat generation can be easily released to the outside, the heat storage of the light emitting device can be suppressed, and the breakage of the light emitting device can be reduced.

The fibrous body 132a is a woven fabric or nonwoven fabric using high-strength fibers of an organic compound or an inorganic compound, and is disposed so as to overlap partially. The high-strength fiber is specifically a fiber having a high tensile modulus or Young's modulus. Representative examples of high-strength fibers include polyvinyl alcohol fibers, polyester fibers, polyamide fibers, polyethylene fibers, aramid fibers, polyparaphenylenebenzobisoxazole fibers, glass fibers, and carbon fibers. Examples of the glass fiber include glass fibers using E glass, S glass, D glass, Q glass, and the like. The fibrous body 132a may be formed of one kind of high-strength fibers. Further, the plurality of high-strength fibers may be formed. It is preferable to use a material having the same refractive index as the fibrous body 132a and the organic resin 132b.

The fibrous body 132a may be a woven fabric woven by using a bundle of fibers (single yarn) (hereinafter referred to as a weft yarn) in the warp yarns and weft yarns, or a nonwoven fabric in which the yarns of plural kinds of fibers are randomly or one- good. In the case of woven fabric, plain weave, twill weaving, and rhetoric can be used appropriately.

The cross section of the cylinder may be circular or elliptical. As the fiber secondary yarn, a fiber yarn obtained by carding by high-pressure water flow, vibration of high frequency using liquid as a medium, vibration of continuous ultrasonic wave, pressing by roll, or the like may be used. The fiber yarn subjected to the carding process has a wider width so that the number of stages in the thickness direction can be reduced, and the cross section of the yarn becomes an elliptical shape or a flat plate shape. In addition, by using low twisting as a yarn bundle, the yarn is easily flattened, and the cross-sectional shape of the yarn becomes an elliptical shape or a flat plate shape. In this way, it is possible to thin the fibrous body 132a by using an elliptical or flat plate-shaped cross section. Therefore, the structure can be thinned, and a thin-type light emitting device can be manufactured.

Next, the first structure used as the first substrate 132 is heated and compressed to plasticize, semi-cure, or cure the organic resin 132b of the first structure. When the first substrate 132 is heated, the heating temperature is preferably 100 DEG C or lower. When the organic resin 132b is a plastic organic resin, it is then cooled to room temperature to cure the plasticized organic resin. Alternatively, the organic resin 132b may be semi-cured or cured by irradiating ultraviolet light to the first structure and pressing the first structure. The organic resin 132b is uniformly spread and cured on the surface of the element-formed layer 124 by heating, ultraviolet light irradiation, and compression. The process of pressing the first structure can be performed under atmospheric pressure or under reduced pressure.

After the first structure is squeezed, the adhesive sheet 131 is removed to expose the resin film 130. Subsequently, a second substrate 133 is formed on the resin film 130 (see FIG. 5B). In the present embodiment, the second substrate 133, like the first substrate 132, uses a second structure in which a fibrous body is impregnated with an organic resin. Thereafter, the second structure is heated and compressed, and the organic resin 132b of the second structure is plasticized or cured. Alternatively, the organic resin 132b may be cured by irradiating ultraviolet light to the second structure and pressing the same. It is also possible to make the resin film 130 function as the second substrate 133. In this case, the second substrate 133 may not be newly formed.

Thus, the light emitting device of the present embodiment having the light emitting elements held by the first and second substrates can be formed.

In the present embodiment, the insulating layer 137 serving as a partition has a convex portion including a first insulating layer 137a and a second insulating layer 137b formed on the first insulating layer 137a , But the embodiment of the present invention is not limited to this. The insulating layer functioning as the barrier rib is embedded in the resin film 130 and has a large surface area in order to improve the adhesion with the resin film 130 and may have a convex portion. For example, an insulating layer 137 having a convex portion in which two second insulating layers 137b are formed may be formed on the first insulating layer 137a like the light emitting element shown in Fig. 6A. The second insulating layer 137b can be formed by a photolithography method, a screen printing method, an inkjet method, or the like. 6B, an insulating layer 137 having a convex portion in which three second insulating layers 137b are formed may be formed on the first insulating layer 137a. The larger the surface area of the insulating layer 137 is, the more the anchor effect is increased and the adhesion between the insulating layer 137 and the resin film 130 can be improved. In the pair of insulating layers 137 covering the end portions of the first electrodes, the number of the convex portions of each insulating layer 137 may be different. When a plurality of second insulating layers 137b are formed on the first insulating layer 137a, the contact area between the plurality of second insulating layers 137b and the first insulating layer 137a is larger than the contact area between the first insulating layers 137a of the first insulating layer 137a and a plurality of the second insulating layers 137b are formed on the first insulating layer 137a.

In addition, the insulating layer 137 may have a laminated structure of three or more layers like the light emitting element shown in Fig. 6C. It is preferable that the thickness of the insulating layer 137 (the height from the surface of the insulating layer 120 to the outermost surface of the insulating layer 137) is 300 nm or more and 5 占 퐉 or less. When the film thickness of the insulating layer is set to 300 nm or more, the insulating property becomes good. Further, if the thickness is 5 占 퐉 or less, the insulating layer 137 can be formed with good productivity.

In the present embodiment, as the first substrate 132 and the second substrate 133, an example using a structure (so-called prepreg) in which a fibrous body is impregnated with an organic resin is shown. However, . For example, as the first substrate 132 or the second substrate 133, a polyester resin such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), an acrylic resin, a polyacrylonitrile resin, a polyimide resin, A flexible substrate made of a polymethyl methacrylate resin, a polycarbonate resin (PC), a polyether sulfone resin (PES), a polyamide resin, a cycloolefin resin, a polystyrene resin, a polyamideimide resin, Or can be bonded to the insulating layer 104 or the resin film 130 by an adhesive using a film or the like. As the adhesive material, various curing adhesives such as a photo-curing type adhesive such as a reaction curing type adhesive, a thermosetting type adhesive, and an ultraviolet ray curing type adhesive and an anaerobic type adhesive can be used. As the material of these adhesives, an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, or the like can be used. However, at least a substrate having transparency is used for the substrate positioned in the light extraction direction of the light emitting element 140. [

As the first substrate 132 or the second substrate 133, a metal substrate may be used. In order to obtain flexibility, it is preferable to use a metal substrate having a thickness of 10 탆 or more and 200 탆 or less. It is more preferable that the film thickness is not less than 20 占 퐉 and not more than 100 占 퐉 because of high flexibility. The material constituting the metal substrate is not particularly limited, but metals such as aluminum, copper, and nickel, and alloys of metals such as aluminum alloys or stainless steels can be suitably used. This metal substrate can be bonded to the insulating layer 104 or the resin film 130 by an adhesive. It is preferable to remove the water adhering to the surface of the metal substrate by performing baking or plasma treatment in vacuum before bonding the metal substrate with an adhesive.

Since the metal substrate is low in permeability, it is used as a support for the light emitting device, thereby preventing the entry of moisture into the light emitting element 140, thereby making it possible to provide a light emitting device having a long life. Although this metal substrate has low permeability and flexibility at the same time, it is preferable to use only one of the pair of substrates for holding the light emitting element in the light emitting device because the light transmittance to visible light is low Do.

7A, a desiccant 142 may be formed between the resin film 130 and the second substrate 133. In this case, By sealing the desiccant 142, deterioration of the light emitting element due to moisture or the like can be prevented. As the drying agent, it is possible to use a substance that absorbs moisture by chemical adsorption such as an oxide of an alkaline earth metal such as calcium oxide or barium oxide. As another drying agent, a substance capable of adsorbing moisture by physical adsorption such as zeolite or silica gel may be used. In the case of extracting light emission from the side of the second electrode 136 of the light emitting element 140, arranging a desiccant in a portion not overlapping the pixel region (for example, a peripheral portion of the pixel region) Do.

7B, the first impact mitigating layer 144 and the second impact mitigating layer 144 are provided on the outer side (opposite to the light emitting element 140) of the first substrate 132 and the second substrate 133, respectively, Layer 146 may be formed.

The impact-reducing layer has an effect of diffusing the force applied from the outside to the light emitting device and reducing it. Therefore, as shown in Fig. 7B, the locally applied force can be reduced by forming the shock-absorbing layer in which a force (also referred to as external stress) externally applied to the light emitting device is diffused, It is possible to increase the strength, and to prevent breakage or defective characteristics.

For example, the first impact mitigating layer 144 and the second impact mitigating layer 146 may have a rubber elasticity of not less than 5 GPa and not more than 12 GPa and a breaking coefficient of not less than 300 MPa. It is preferable to use a material having a lower elastic modulus and a higher breaking strength than the first substrate 132 and the second substrate 133.

The first impact mitigating layer 144 and the second impact mitigating layer 146 are preferably formed of a high-strength material. Representative examples of the high-strength material include polyvinyl alcohol resin, polyester resin, polyamide resin, polyethylene resin, aramid resin, polyparaphenylenebenzobisoxazole resin, and glass resin. When the first impact mitigating layer 144 and the second impact mitigating layer 146 are formed of a high-strength material having elasticity, a load such as local pressure is diffused and absorbed throughout the entire layer, .

More specifically, as the first impact mitigating layer 144 and the second impact mitigating layer 146, an aramid resin, a polyethylene naphthalate (PEN) resin, a polyethersulfone (PES) resin, a polyphenylene sulfide (PPS) resin , A polyimide (PI) resin, and a polyethylene terephthalate (PET) resin. In the present embodiment, an aramid film using an aramid resin is used as the first impact mitigating layer 144 and the second impact mitigating layer 146.

The first substrate 132 and the first impact mitigating layer 144 or the second substrate 133 and the second impact mitigating layer 146 may be bonded together by an adhesive agent (not shown). If the first substrate 132 or the second substrate 133 is a structure in which a fibrous body is impregnated with an organic resin, the first substrate 132 or the second substrate 133 can be bonded directly by heating and pressurizing without interposing an adhesive.

7B shows an example in which the impact mitigation layer is formed on both sides of the first substrate 132 and the second substrate 133. The impact mitigation layer may be formed on the first substrate 132 or the second substrate 133 May be formed on the outer side. 7B, if the pair of impact mitigating layers are formed symmetrically with respect to the element section 170, the force applied to the light emitting device can be uniformly diffused, and therefore, an element caused by bending, warping, So that breakage of the portion 170 can be prevented. Further, when the pair of substrates or the pair of shock-absorbing layers are made of the same material and the same film thickness, equivalent characteristics can be given, so that the effect of diffusion of force is further enhanced.

The light emitting device shown in this embodiment has the convex portion of the insulating layer 137 and the convex portion is embedded in the resin film 130 to improve the adhesion between the insulating layer 137 and the resin film 130 It becomes possible to transfer the light emitting element to the flexible substrate without causing the peeling in the light emitting element in the manufacturing process of the light emitting device. Thus, it becomes possible to manufacture the light emitting device with good yield. Further, the manufactured light emitting device can be a highly reliable light emitting device.

In addition, in the light emitting device of the present embodiment, since the pair of structures for holding the element portions are formed, the force applied locally can be reduced, thereby preventing breakage of the light emitting device due to external stress, . Therefore, it is possible to provide a highly reliable light emitting device having resistance while attaining thinning and miniaturization. In addition, in the manufacturing process, defects in shape and characteristics due to external stress can be prevented, and a light emitting device can be manufactured with good manufacturing yield.

The present embodiment can be used in appropriate combination with other embodiments.

(Fourth Embodiment)

In this embodiment, an example of a modular light emitting device (also referred to as an EL module) is shown using a top view and a sectional view of Fig.

Fig. 8A is a top view showing an EL module manufactured by the method described in the above embodiment, and Fig. 8B is a sectional view taken along line A-A 'in Fig. 8A. A pixel portion 502, a source side driver circuit 504, and a gate side driver circuit 503 are formed on the first substrate 132 in Fig. 8A.

Reference numeral 508 denotes a wiring for transferring a signal to be inputted to the source side driver circuit 504 and the gate side driver circuit 503 and can be formed at the same time as the wiring included in the switching element of the pixel portion. The wiring 508 receives a video signal, a clock signal, a start signal, a reset signal, and the like from an FPC (Flexible Print Circuit) 402 serving as an external input terminal. Although only the FPC 402 is shown here, a printed wiring board (PWB) may be mounted on the FPC. The light emitting device in this specification includes not only the main body of the light emitting device but also a state in which the FPC or PWB is mounted thereon.

Next, the cross-sectional structure will be described with reference to Fig. 8B. A pixel portion 502 and a gate side driver circuit 503 are formed above the first substrate 132. The pixel portion 502 includes a thin film transistor 106 and a first electrode electrically connected to the drain thereof And is formed by a plurality of pixels. The FPC 402 serving as an external input terminal is well bonded to the wiring 508 formed on the first substrate 132 via an anisotropic conductive agent or the like. The wiring 508 and the wiring formed on the FPC 402 are electrically connected by the conductive particles included in the anisotropic conductive agent. 8, the FPC 402 is sandwiched between a first substrate 132 and a second substrate 133.

Thus, a modular light emitting device to which the FPC 402 is connected can be obtained.

The present embodiment can be freely combined with other embodiments.

(Embodiment 5)

The light emitting device shown in the above embodiment can be used as a display portion of an electronic apparatus. The electronic apparatus shown in this embodiment has the light-emitting device shown in the above-described embodiment. By the manufacturing method of the light-emitting device shown in the above-described embodiment, it is possible to obtain a light-emitting device having good manufacturing yield and high reliability, and as a result, it is possible to manufacture electronic equipment as a final product with good throughput and good quality .

The light-emitting device shown in the above embodiment can be used, for example, in a display portion of all electronic devices such as a display device, a computer, a mobile phone, and a camera. By using the light-emitting device shown in the above-described embodiment in the display portion, it is possible to provide an electronic device that is thin and lightweight and highly reliable.

9A is a television device and includes a case 9101, a support base 9102, a display portion 9103, a speaker portion 9104, a video input terminal 9105, and the like. The display portion 9103 of this television apparatus is manufactured by using the light-emitting device shown in the above-described embodiment. The television apparatus equipped with the light emitting device described in the above embodiment which is flexible, long in life, and easy to manufacture can display a curved surface and realize a light weight, and can provide a highly reliable product in the display portion 9103 .

9B is a computer and includes a main body 9201, a case 9202, a display portion 9203, a keyboard 9204, an external connection port 9205, a pointing device 9206, and the like. The display portion 9203 of this computer is manufactured by using the light emitting device shown in the above embodiment mode. A computer equipped with the light emitting device described in the above embodiment capable of being flexible, long-life, and easy to manufacture can display a curved surface and realize weight reduction, thereby making the product highly reliable.

9C is a portable telephone which includes a main body 9401, a case 9402, a display portion 9403, a voice input portion 9404, a voice output portion 9405, an operation key 9406, an external connection port 9407, do. The display portion 9403 of this cellular phone is manufactured by using the light-emitting device shown in the above-described embodiment. The cellular phone equipped with the light emitting device described in the above embodiment which is flexible, long in life and easy to manufacture can display a curved surface and realize a light weight and can provide a highly reliable commodity in the display portion 9403 . In addition, the cellular phone according to the present embodiment, which is intended to be light in weight, can have a weight suitable for carrying even if it has various added value, and the cellular phone is also suitable for a high-function cellular phone.

9D is a camera and includes a main body 9501, a display portion 9502, a case 9503, an external connecting port 9504, a remote control receiving portion 9505, a receiving portion 9506, a battery 9507, a voice input portion 9508 An operation key 9509, an eyepiece portion 9510, and the like. The display portion 9502 of this camera is manufactured by using the light-emitting device shown in the above-described embodiment. The camera equipped with the light emitting device described in the above embodiment which is flexible, long in life, and easy to manufacture can display a curved surface and realize a light weight, and can provide a highly reliable product in the display portion 9502. [

9E is a display which includes a main body 9601, a display portion 9602, an external memory inserting portion 9603, a speaker portion 9604, operation keys 9605, and the like. The main body 9601 may also include a television receiving antenna, an external input terminal, an external output terminal, a battery, and the like. The display portion 9602 of this display is manufactured by using the light-emitting device shown in the above embodiment mode. The flexible display portion 9602 can be wound in the body 9601 and housed therein, and is suitable for carrying. In the display including the light emitting device described in the above-described embodiment in which the display portion 9602 can be made into a flexible shape, the display portion 9602 can be made into a highly reliable product while realizing portable adaptability and weight reduction.

As described above, the application range of the light emitting device manufactured using the light emitting device shown in the above embodiment is extremely wide, and the light emitting device can be applied to electronic devices in all fields.

The light-emitting device shown in the above-described embodiment can also be used as a lighting device. One mode of use as a lighting device will be described with reference to Fig.

Fig. 10 shows an example in which the light emitting device shown as an example in the above embodiment is used as a lighting device 3001 and a lighting device 3001 or 3002 in a room. The electric stand 3000 shown in Fig. 10 uses, as a light source, a light emitting device showing an example of the above embodiment. Therefore, weight reduction can be realized, and a highly reliable electric stand can be obtained. Further, by using the light-emitting device described in the above embodiment, it is possible to provide the illuminating devices 3001 and 3002 which are lighter and more reliable. Further, since this light emitting device can be made flexible, it is possible to use, for example, a roll-type illumination like the illumination device 3002. [

In addition, the illumination device is not limited to the one illustrated in Fig. 10, and can be applied to various types of illumination devices including illumination of houses and public facilities. In this case, the lighting apparatus using the light-emitting device shown in the above-mentioned embodiment can provide the market with a product in which design freedom is high and various designs are concentrated because the light-emitting medium is thin-film type.

The present embodiment can be used in appropriate combination with other embodiments.

100: substrate 102: release layer
104: insulating layer 106: thin film transistor
108: semiconductor layer 110: gate insulating layer
112: gate electrode 114: insulating layer
116: insulating layer 118: wiring
120: insulating layer 122: electrode
124: element forming layer 130: resin film
131: adhesive sheet 132: substrate
132a: Fiber body 132b: Organic resin
133: substrate 134: EL layer
136: electrode 137: insulating layer
137a: insulating layer 137b: insulating layer
138: insulating layer 140: light emitting element
142: desiccant 144: shock-absorbing layer
146: impact relaxation layer 170: element part
200: substrate 402: FPC

Claims (6)

Board;
A first insulating layer on the substrate;
As a light emitting element on the first insulating layer:
A first electrode on the first insulating layer;
An EL layer in contact with the first electrode;
A second electrode in contact with the EL layer; And
And a second insulating layer covering an end of the first electrode;
A third insulating layer over the second insulating layer; And
And a resin film in which the third insulating layer is buried and covers the light emitting element,
Wherein the third insulating layer includes a first convex portion and a second convex portion,
The resin film contacts a first portion of the surface of the second insulating layer, a second portion of a surface of the third insulating layer,
The second electrode overlaps with the first convex portion,
The second electrode does not overlap the second convex portion,
Wherein the EL layer overlaps with the first convex portion,
The EL layer does not overlap with the second convex portion,
And the third insulating layer comprises an organic material. A first substrate;
A first insulating layer on the first substrate;
As a light emitting element on the first insulating layer:
A first electrode on the first insulating layer;
An EL layer in contact with the first electrode;
A second electrode in contact with the EL layer; And
And a second insulating layer covering an end of the first electrode;
A third insulating layer in contact with the second insulating layer, wherein a contact area with the second insulating layer is smaller than an area of the second insulating layer;
A resin film in which the third insulating layer is buried and covers the light emitting element; And
And a second substrate provided on the resin film,
Wherein the third insulating layer includes a first convex portion and a second convex portion,
The resin film contacts a first portion of the surface of the second insulating layer, a second portion of a surface of the third insulating layer,
The second electrode overlaps with the first convex portion,
The second electrode does not overlap the second convex portion,
Wherein the EL layer overlaps with the first convex portion,
The EL layer does not overlap with the second convex portion,
And the third insulating layer comprises an organic material. 3. The method of claim 2,
Wherein a thickness of the first substrate is equal to a thickness of the second substrate. A first flexible substrate;
A first insulating layer on the first flexible substrate;
As a light emitting element on the first insulating layer:
A first electrode on the first insulating layer;
A second insulating layer covering an end of the first electrode;
An EL layer in contact with the first electrode; And
And a second electrode in contact with the EL layer;
A third insulating layer over the second insulating layer; And
And a resin film in which the third insulating layer is buried and covers the light emitting element,
Wherein the third insulating layer includes a first convex portion and a second convex portion,
The resin film contacts a first portion of the surface of the second insulating layer, a second portion of a surface of the third insulating layer,
The second electrode overlaps with the first convex portion,
The second electrode does not overlap the second convex portion,
Wherein the EL layer overlaps with the first convex portion,
The EL layer does not overlap with the second convex portion,
And the third insulating layer comprises an organic material. A first flexible substrate;
A first insulating layer on the first flexible substrate;
As a light emitting element on the first insulating layer:
A first electrode on the first insulating layer;
A second insulating layer covering an end of the first electrode;
An EL layer in contact with the first electrode; And
And a second electrode in contact with the EL layer;
A third insulating layer in contact with the second insulating layer, wherein a contact area with the second insulating layer is smaller than an area of the second insulating layer;
A resin film in which the third insulating layer is buried and covers the light emitting element; And
And a second flexible substrate provided on the resin film,
Wherein the third insulating layer includes a first convex portion and a second convex portion,
The resin film contacts a first portion of the surface of the second insulating layer, a second portion of a surface of the third insulating layer,
The second electrode overlaps with the first convex portion,
The second electrode does not overlap the second convex portion,
Wherein the EL layer overlaps with the first convex portion,
The EL layer does not overlap with the second convex portion,
And the third insulating layer comprises an organic material. And a display unit,
Wherein the display unit includes the light emitting device according to any one of claims 1, 2, 4, and 5.

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