JP4373653B2 - Organic EL display device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a display device, and more particularly to an organic EL (electroluminescence) display device.
[0002]
[Prior art]
Since the organic EL display device is a self-luminous display device, the viewing angle is wide and the response speed is fast. In addition, since a backlight is not necessary, it is possible to reduce the thickness and weight. For these reasons, in recent years, organic EL display devices have attracted attention as display devices that replace liquid crystal display devices.
[0003]
By the way, in the manufacturing process of the organic EL display device, when a light emitting layer is formed, a vacuum evaporation method is used when a low molecular organic material is used as the material. Moreover, when using a polymeric organic material as a material of a light emitting layer, the method of drying the coating film formed by apply | coating the solution containing a polymeric organic material is employ | adopted.
[0004]
Specifically, in the latter method, first, a laminate of a hydrophilic insulating layer and a hydrophobic insulating layer having through holes corresponding to each pixel is formed on a substrate. Next, using these through holes as a liquid reservoir, the through holes are filled with a solution containing a polymer organic material by a solution coating method such as dipping, ink jetting, or spin coating. Thereafter, the liquid film in the through holes is dried to remove the solvent from the liquid film. A light emitting layer is obtained as described above.
[0005]
FIG. 3 is a cross-sectional view schematically showing an example of an organic EL display device obtained by such a method. In the above method, the film thickness uniformity of the light emitting layer 28 is determined by the wettability of the solution with respect to the hydrophilic insulating layer 26a and the hydrophobic insulating layer 26b used for reservoir, the surface tension and viscosity of the solution itself, Influenced by drying characteristics. Therefore, as shown in FIG. 3, the light emitting layer 28 tends to be thinner in the central portion than in the peripheral portion.
[0006]
If the film thickness of the light emitting layer 28 is non-uniform, the current is concentrated on the portion where the film thickness is thin. Such current concentration not only prevents uniform light emission within the pixel, but also brings about early deterioration of the light emitting layer 28 in a portion where the film thickness is thin, thereby reducing the light emission lifetime of the display device.
[0007]
[Problems to be solved by the invention]
The present invention has been made in view of the above problems, and an object thereof is to provide an organic EL display device capable of suppressing local current concentration on a part of a light emitting layer. Another object of the present invention is to provide an organic EL display device having a more uniform film thickness.
[0008]
[Means for Solving the Problems]
In order to solve the above problems, the present invention provides a substrate, a plurality of first electrodes arranged on one main surface of the substrate so as to be spaced apart from each other, and the plurality of first electrodes among the main surfaces of the substrate. A first insulating layer that covers a portion exposed between each of the plurality of first electrodes and a peripheral portion of each of the plurality of first electrodes and has a plurality of first through holes at positions corresponding to the center portions of the plurality of first electrodes; And a second insulating layer provided on the first insulating layer and having a plurality of second through holes at positions corresponding to the plurality of first electrodes, respectively, and provided on the plurality of first electrodes, respectively. A plurality of organic layers including a light emitting layer formed by a solution coating method; and a second electrode as a common electrode provided on the plurality of organic layers, wherein the diameter of the second through hole is the first Larger than the diameter of one electrode and 2 through-holes are provided so as to surround the first electrode, and the laminate of the first insulating layer and the second insulating layer forms a plurality of grooves each surrounding the plurality of first electrodes. The first insulating layer is an inorganic insulating layer, the second insulating layer is an organic insulating layer, and each of the plurality of second through holes is from the main surface side of the second insulating layer facing the substrate. An organic EL display device characterized in that the diameter of the second insulating layer is expanded to the other main surface side.
[0009]
In the present invention, each of the plurality of first electrodes may be an anode and the second electrode may be a cathode. In this case, each of the plurality of organic layers may further include a buffer layer that is interposed between the light emitting layer and the anode and mediates injection of holes from the anode to the light emitting layer .
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, in each figure, the same referential mark is attached | subjected to the same or similar component, and the overlapping description is abbreviate | omitted.
[0011]
FIG. 1 is a cross-sectional view schematically showing an organic EL display device according to an embodiment of the present invention. An organic EL display device 1 shown in FIG. 1 has a structure in which an array substrate 2 and a sealing substrate 3 are opposed to each other with a seal layer 4 interposed therebetween. The sealing layer 4 is provided along the periphery of the sealing substrate 3, thereby forming a sealed space between the array substrate 2 and the sealing substrate 3. This space is filled with a rare gas such as Ar gas or an inert gas such as N ₂ gas.
[0012]
The array substrate 2 has a substrate 11. On the substrate 11, for example, an SiN _x layer 12 and an SiO ₂ layer 13 are sequentially stacked as an undercoat layer. On the undercoat layer 13, a semiconductor layer 14 such as a polysilicon layer in which a channel and source / drain are formed, a gate insulating film 15, and a gate electrode 16 are sequentially stacked. These are top gate type thin film transistors. 20 (hereinafter referred to as TFT).
[0013]
An interlayer insulating film 21 made of SiO ₂ or the like is provided on the gate insulating film 15 and the gate electrode 16. An electrode wiring (not shown) and source / drain electrodes 23 are provided on the interlayer insulating film 21, and these are embedded with a passivation film 24 made of SiN _x or the like. The source / drain electrode 23 is electrically connected to the source / drain of the TFT 20 through a contact hole provided in the interlayer insulating film 21.
[0014]
On the passivation film 24, transparent electrodes (anodes) 25 are juxtaposed apart from each other. The anode 25 is electrically connected to the drain electrode 23 through a via hole provided in the passivation film 24.
[0015]
An insulating layer 26 a is further provided on the passivation film 24. The insulating layer 26 a has a through hole at a position corresponding to the central portion of the anode 25, and covers the portion of the passivation film 24 exposed from the anode 25 and the peripheral portion of the anode 25. The insulating layer 26a is, for example, a hydrophilic inorganic insulating layer. The adjacent anodes 25 are electrically insulated by the insulating layer 26a.
[0016]
An insulating layer 26b is provided on the insulating layer 26a. The insulating layer 26 b has a through hole having a diameter larger than that of the anode 25 at a position corresponding to the anode 25. These through holes are provided so as to surround the anode 25. The insulating layer 26b is, for example, a water repellent organic insulating layer. The laminated body of the insulating layer 26 a and the insulating layer 26 b constitutes a partition insulating layer 26 having a through hole at a position corresponding to the anode 25.
[0017]
A buffer layer 27 and a light emitting layer 28 are sequentially stacked on the anode 25 exposed in the through hole of the partition insulating layer 26. The buffer layer 27 plays a role of mediating injection of holes from the anode 25 to the light emitting layer 28. The light emitting layer 28 is a thin film containing a luminescent organic compound whose emission color is red, green, or blue, for example.
[0018]
A common electrode (cathode) 29 is provided on the partition insulating layer 26 and the light emitting layer 28. The cathode 29 is electrically connected to the electrode wiring through a contact hole (not shown) provided in the passivation film 24 and the partition insulating layer 26. Each organic EL element 30 includes the anode 25, the buffer layer 27, the light emitting layer 28, and the cathode 29.
[0019]
Now, the buffer layer 27 and the light emitting layer 28 of the organic EL display device 1 can be formed by a solution coating method using a solution containing an organic solvent and an organic compound. Since such a solution is a low polarity solution, the wettability with respect to the water-repellent insulating layer 26b is high. Therefore, the buffer layer 27 and the light emitting layer 28 try to increase the contact area with the side surface of the insulating layer 26b.
[0020]
In the conventional structure shown in FIG. 3, the end of the anode 25 is disposed so as to overlap the hydrophobic insulating layer 26b, and the hydrophilic insulating layer 26a is formed substantially flat in the liquid reservoir. For this reason, the buffer layer 27 rises at the joint surface with the hydrophobic insulating layer 26b, and the film thickness increases near the joint surface. As a result, the film thicknesses of the buffer layer 27 and the light emitting layer 28 are greatly reduced from the periphery toward the center not only on the insulating layer 26a but also at positions corresponding to the through holes of the insulating layer 26a.
[0021]
In the organic EL element 30, the portion of the buffer layer 27 and the light emitting layer 28 located on the insulating layer 26a hardly contributes to light emission, and the portion located corresponding to the through hole of the insulating layer 26a mainly contributes to light emission. Therefore, as shown in FIG. 3, if the film thickness unevenness of the buffer layer 27 and the light emitting layer 28 is large at the position corresponding to the through hole of the insulating layer 26a, light emission unevenness and early deterioration due to current concentration are likely to occur.
[0022]
FIG. 2A is an enlarged cross-sectional view showing a part of the array substrate of the organic EL display device 1 shown in FIG. FIG. 2B is a plan view schematically showing a part of the structure shown in FIG. In FIG. 2B, the buffer layer 27, the light emitting layer 28, and the cathode 29 are omitted. Moreover, the cross section shown to Fig.2 (a) is corresponded in the cross section along the AA line of the structure shown in FIG.2 (b).
[0023]
As shown in FIGS. 1 and 2A and 2B, in this embodiment, the insulating layer 26a having a through hole at a position corresponding to the central portion of the anode 25 is exposed from the anode 25 of the passivation film 24. The portion and the peripheral edge of the anode 25 are provided so as to cover. When such an arrangement is adopted, the surface of the insulating layer 26a has an annular protrusion 41 corresponding to the peripheral edge of the anode 25 due to the surface uneven structure formed by the passivation film 24 and the anode 25, and the anode A lattice-shaped concave portion corresponding to the gap portion between 25 is generated. In addition, in the present embodiment, the lattice-shaped recesses provided on the surface of the insulating layer 26a are not completely filled with the insulating layer 26b, but are narrower than the recesses and spaced from the sidewalls of the recesses 26b. Is provided. In other words, the insulating layer 26 b is provided at a position between the adjacent anodes 25 and not overlapping with the anodes 25. Therefore, as shown in FIGS. 1 and 2A and 2B, the surface of the laminated body of the insulating layer 26a and the insulating layer 26b surrounds an annular convex portion 41 generated on the surface of the insulating layer 26a. A groove 42 is created.
[0024]
In such a structure, the height of the underlying surface of the buffer layer 27 increases from the lower end of the insulating layer 26 b toward the center of the anode 25 and then decreases. Therefore, even if the contact area between the buffer layer 27 and the light emitting layer 28 and the side surface of the insulating layer 26b is large, the difference between the height of the upper peripheral edge of the buffer layer 27 and the light emitting layer 28 and the height of the center of the upper surface becomes large. There is nothing. Moreover, the convex portion 41 plays a role of reducing the influence of the peripheral portion of the coating film on the central portion in the process of forming the buffer layer 27 and the light emitting layer 28. Therefore, according to the present embodiment, film thickness unevenness of the buffer layer 27 and the light emitting layer 28 at a position corresponding to the through hole of the insulating layer 26a can be reduced, and light emission unevenness and early deterioration due to current concentration can be suppressed. . In other words, since the groove 42 is provided, the peripheral area of the buffer layer is dropped into the groove 42 without changing the contact area of the buffer layer 27 with the side surface of the insulating layer 26b. The peripheral portion is prevented from rising and tension is applied to the central portion of the buffer layer, whereby the thickness of the buffer layer 27 becomes uniform, and the light emitting layer 28 coated thereon has a uniform thickness.
[0025]
In the present embodiment, the width of the groove 42 is preferably 1.0 μm or more. Usually, if the width of the groove 42 is too narrow, the above effect does not appear remarkably. Moreover, it is preferable that the width | variety of the groove | channel 42 is 4.0 micrometers or less. When the width of the groove 42 is wide, the area ratio of the portion that does not contribute to the light emission of the organic EL element 30 increases.
[0026]
In the present embodiment, the depth of the groove 42 is preferably 50 nm or more. Usually, when the groove 42 is too shallow, the above-mentioned effect does not appear remarkably. In addition, although there is no upper limit in particular in the depth of the groove | channel 42, in this embodiment, since the groove | channel 42 is formed using the thickness of the anode 25 as mentioned above, it is 150 nm or less normally.
[0027]
Next, materials that can be used for main components of the organic EL display device 1 according to the present embodiment will be described.
Any substrate 11 may be used as long as it can hold the structure formed thereon. The substrate 11 is generally a hard substrate such as a glass substrate. However, depending on the application of the organic EL display device 1, a flexible substrate such as a plastic sheet may be used.
[0028]
When the organic EL display device 1 is a bottom emission type that emits light from the substrate 11 side, a transparent electrode having optical transparency is used as the anode 25. As a material for the transparent electrode, a transparent conductive material such as ITO (indium tin oxide) can be used. The film thickness of the transparent electrode is usually about 10 nm to 150 nm. The transparent electrode can be obtained by depositing a transparent conductive material such as ITO by vapor deposition or sputtering, and patterning a thin film obtained thereby using a photolithography technique.
[0029]
As a material of the insulating layer 26a, for example, an inorganic insulating material such as silicon nitride or silicon oxide can be used. The insulating layer 26a made of these inorganic insulating materials exhibits relatively high hydrophilicity.
[0030]
As a material of the insulating layer 26b, for example, an organic insulating material can be used. There is no particular limitation on the organic insulating material that can be used for the insulating layer 26b. However, when a photosensitive resin is used, the insulating layer 26b provided with a through hole can be easily formed. As a photosensitive resin that can be used to form the insulating layer 26b, for example, a photosensitive compound such as naphthoquinonediazide is added to an alkali-soluble polymer derivative such as phenol resin, polyacryl, polyamide resin, or polyamic acid. Thus, a material that gives a positive pattern by exposure and alkali development can be mentioned. In addition, as a photosensitive resin that gives a negative pattern, a photosensitive composition that has a slow dissolution rate in a developer upon irradiation with actinic radiation, such as a photosensitive composition having a functional group that crosslinks upon irradiation with actinic radiation such as an epoxy group. You can list things. The insulating layer 26b is formed by, for example, applying these photosensitive resins to the surface of the substrate 11 on which the anode 25 or the like is formed by a spin coating method or the like, and patterning the resulting coating film using a photolithography technique. can get.
[0031]
The thickness of the partition insulating layer 26 is preferably equal to or greater than the sum of the thickness of the buffer layer 27 and the thickness of the light emitting layer 28, and is usually about 0.09 μm to 0.13 μm. Further, the film thickness of the insulating layer 26a is usually about 0.05 to 0.1 μm. When the buffer layer 27 and the light emitting layer 28 are formed, the surface of the insulating layer 26b is previously subjected to a water repellent treatment with a plasma gas such as CF ₄ .O ₂ in order to improve the positional accuracy during solution application by the ink jet method. It is desirable to keep it.
[0032]
As a material of the buffer layer 27, for example, a mixture of a donor high molecular organic compound and an acceptor high molecular organic compound can be used. As the donor high molecular organic compound, for example, a polythiophene derivative such as polyethylenedioxythiophene (hereinafter referred to as PEDOT) and / or a polyaniline derivative such as polyaniline can be used. As the acceptor organic compound, for example, polystyrene sulfonic acid (hereinafter referred to as PSS) can be used.
[0033]
The buffer layer 27 is a solution obtained by dissolving a liquid reservoir formed by the partition insulating layer 26 by dissolving a mixture of a donor high molecular organic compound and an acceptor high molecular organic compound in an organic solvent by a solution coating method. It is obtained by filling and drying the liquid film in the liquid reservoir to remove the solvent from the liquid film. Examples of the solution coating method that can be used to form the buffer layer 27 include dipping, ink jetting, and spin coating, among which the ink jet method is preferably used. Further, the liquid film may be dried under heat and / or reduced pressure, or may be naturally dried.
[0034]
As a material of the light emitting layer 28, a luminescent organic compound generally used in an organic EL display device can be used. Among such organic compounds, those that emit red luminescence include, for example, polymer compounds having an alkyl or alkoxy substituent on the benzene ring of a polyvinylene styrene derivative, and cyano groups on the vinylene group of a polyvinylene styrene derivative. And the like. Examples of the organic compound that emits green luminescence include a polyvinylene styrene derivative in which an alkyl, alkoxy, or aryl derivative substituent is introduced into a benzene ring. Examples of the organic compound that emits blue luminescence include polyfluorene derivatives such as a copolymer of dialkylfluorene and anthracene. In addition, the light emitting layer 28 may be further added with a low molecular luminescent organic compound or the like to these high molecular luminescent organic compounds.
[0035]
As described above, in the light emitting layer 28, the liquid reservoir formed by the partition insulating layer 26 is filled with a solution obtained by dissolving a luminescent organic compound in a solvent by a solution coating method, and the liquid film in the liquid reservoir is dried. Thus, the solvent is removed from the liquid film. Examples of the solution coating method that can be used to form the light emitting layer 28 include dipping, ink jetting, and spin coating, among which the ink jet method is preferably used. Further, the liquid film may be dried under heat and / or reduced pressure, or may be naturally dried.
[0036]
The thickness of the light emitting layer 28 is appropriately set according to the material used. Usually, the film thickness of the entire light emitting layer 28 is in the range of 50 nm to 200 nm.
[0037]
The cathode 29 may have a single layer structure, or may have a multilayer structure. When the cathode 29 has a multilayer structure, for example, a two-layer structure in which a main conductor layer containing barium or calcium and a protective conductor layer containing silver or aluminum are sequentially laminated on the light emitting layer 28 may be used. . Alternatively, a two-layer structure in which a non-conductor layer containing barium fluoride or the like and a conductor layer containing silver or aluminum or the like are sequentially stacked on the light emitting layer 28 may be used. Further, a non-conductive layer containing barium fluoride or the like, a main conductor layer containing barium or calcium, and a protective conductor layer containing silver or aluminum are sequentially laminated on the light emitting layer 28. Also good.
[0038]
In the above embodiment, the anode 25 is provided on the passivation film 24. However, the anode 25 may be provided on the interlayer insulating film 21, that is, the signal line and the anode 25 may be provided on the same plane. In the above embodiment, the organic EL display device 1 is a bottom emission type, but it can also be a top emission type. Further, when the array substrate 2 is sealed by the counter substrate 3, it is possible to extend the life of the element by enclosing a desiccant in the space between the substrates, and the counter substrate 3, the array substrate 2, It is also possible to improve the heat dissipation characteristics by filling a resin in between.
[0039]
【Example】
Examples of the present invention will be described below.
(Example)
In this example, the organic EL display device 1 shown in FIG. 1 was produced by the following method.
[0040]
That is, first, film formation and patterning are repeated on the surface of the glass substrate 11 on which the undercoat layers 11 and 12 are formed in the same manner as in the normal TFT formation process, so that the TFT 20, the interlayer insulating film 21, and the electrode wiring (not shown) The source / drain electrodes 23 and the passivation film 24 were formed.
[0041]
Next, an ITO film having a thickness of 50 nm was formed on the passivation film 24 by sputtering. Subsequently, the ITO film was patterned using a photolithography technique to obtain an anode 25. Here, the anode 25 has a substantially circular shape with a diameter of 55 μm. The anode 25 may be formed by a mask sputtering method.
[0042]
Next, a hydrophilic inorganic insulating layer 26a having an opening corresponding to the light emitting portion of each pixel was formed on the surface of the substrate 11 on which the anode 25 was formed. Here, the thickness of the insulating layer 26a was 0.1 μm. In addition, the opening of the hydrophilic layer 26a has a substantially circular shape with a diameter of 50 μm as shown in FIG. Subsequently, a photosensitive resin is applied to the surface of the substrate 11 on which the anode 25 is formed, and the obtained coating film is subjected to pattern exposure and development, whereby a water repellent having an opening corresponding to the light emitting portion of each pixel. An organic insulating layer 26b was formed. Here, the insulating layer 26b has a thickness of 3 μm, and the opening of the insulating layer 26b has a substantially circular shape with a diameter of 58 μm as shown in FIG.
[0043]
As described above, the partition insulating layer 26 obtained by laminating the insulating layer 26a and the insulating layer 26b was obtained. Note that the substrate 11 on which the partition insulating layer 26 was formed was subjected to a surface treatment using CF ₄ / O ₂ plasma gas to fluorinate the surface of the insulating layer 26b.
[0044]
Next, a liquid film was formed by discharging the ink for forming the buffer layer into each liquid reservoir formed by the partition insulating layer 26 by an inkjet method. Subsequently, the buffer film 27 was obtained by heating these liquid films to a temperature of 120 ° C. for 3 minutes.
[0045]
Thereafter, on the buffer layer 27 corresponding to the red, green, and blue pixels, red, green, and blue light emitting layer forming inks were respectively ejected by an ink jet method to form a liquid film. Then, the light emitting layer 28 was obtained by heating these liquid films to the temperature of 90 degreeC for 1 hour.
[0046]
Next, a cathode 29 was formed by vacuum-depositing barium on the surface of the substrate 11 on which the light-emitting layer 28 was formed, and subsequently evaporating aluminum. Thereby, the TFT array substrate 2 was completed.
[0047]
Thereafter, an ultraviolet curable resin was applied to the peripheral portion of one main surface of the glass substrate 3 to form the seal layer 4. Next, the glass substrate 3 and the array substrate 2 were bonded together in an inert gas so that the surface of the glass substrate 3 provided with the seal layer 4 and the surface of the array substrate 2 provided with the cathode 29 were opposed. Furthermore, the organic EL display device 1 shown in FIG. 1 was completed by curing the seal layer by ultraviolet irradiation.
[0048]
(Comparative example)
An organic EL display device was fabricated by the same method as described in the above example except that the structure of FIG. 3 was adopted for the array substrate 2. In this example, the anode 25 has a substantially circular shape with a diameter of 58 μm, the opening of the hydrophilic layer 26 a has a substantially circular shape with a diameter of 50 μm, and the opening of the insulating layer 26 b has a substantially circular shape with a diameter of 55 μm.
[0049]
Next, regarding the organic EL display device 1 according to Examples and Comparative Examples, the buffer layer 27 and the light emitting layer 28 were observed with a cross-sectional SEM.
As a result, in the organic EL display device 1 according to the example, the thicknesses of the buffer layer 27 and the light emitting layer 28 were substantially uniform at the positions of the through holes provided in the insulating layer 26a. That is, the organic EL display device 1 according to the example had a structure capable of suppressing local current concentration on a part of the light emitting layer 28. Actually, when the display was performed with the organic EL display device 1, uneven brightness did not occur in each pixel. On the other hand, in the organic EL display device 1 according to the comparative example, the film thickness unevenness of the buffer layer 27 and the light emitting layer 28 is large at the position of the through hole provided in the insulating layer 26a, and uneven brightness occurs in each pixel. It was.
[0050]
【The invention's effect】
As described above, in the present invention, the first insulating layer constituting the lower part of the partition insulating layer and the second insulating layer constituting the upper part can form a groove surrounding a plurality of electrodes arranged on the substrate. adopt. According to such a structure, film thickness unevenness of the light emitting layer or the like at the position of the through hole provided in the first insulating layer can be reduced, and local current concentration on a part of the light emitting layer can be suppressed.
That is, according to the present invention, an organic EL display device capable of suppressing local current concentration on a part of the light emitting layer is provided.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view schematically showing an organic EL display device according to an embodiment of the invention.
2A is an enlarged cross-sectional view showing a part of the array substrate of the organic EL display device 1 shown in FIG. 1, and FIG. 2B is a plan view schematically showing a part of the structure shown in FIG. Figure.
FIG. 3 is a cross-sectional view schematically showing an example of a conventional organic EL display device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Organic EL display device 2 ... Array substrate 3 ... Sealing substrate 4 ... Seal layer 11 ... Substrate 12 ... Undercoat layer 13 ... Undercoat layer 14 ... Semiconductor layer 15 ... Gate insulating film 16 ... Gate electrode 20 ... TFT
DESCRIPTION OF SYMBOLS 21 ... Interlayer insulating film 23 ... Source / drain electrode 24 ... Passivation film 25 ... Anode 26 ... Partition insulating layer 26a, 26b ... Insulating layer 27 ... Buffer layer 28 ... Organic light emitting layer 29 ... Cathode 30 ... Organic EL element 41 ... Projection 42 ... Groove

Claims (2)

A substrate,
A plurality of first electrodes arranged spaced apart from each other on one main surface of the substrate;
A portion of the main surface of the substrate that is exposed between the plurality of first electrodes and a peripheral portion of each of the plurality of first electrodes are covered with a position corresponding to a central portion of the plurality of first electrodes. A first insulating layer each having a plurality of first through holes;
A second insulating layer provided on the first insulating layer and having a plurality of second through holes at positions corresponding to the plurality of first electrodes;
A plurality of organic layers each including a light emitting layer provided on each of the plurality of first electrodes and formed by a solution coating method;
A second electrode as a common electrode provided on the plurality of organic layers, wherein the second through hole has a diameter larger than that of the first electrode, and the second through hole has the first electrode. And the laminated body of the first insulating layer and the second insulating layer forms a plurality of grooves each surrounding the plurality of first electrodes, and the first insulating layer is inorganic. An insulating layer, the second insulating layer is an organic insulating layer, and each of the plurality of second through holes is formed on the other surface of the second insulating layer from the main surface facing the substrate. An organic EL display device characterized in that the diameter is expanded to the main surface side.   Each of the plurality of first electrodes is an anode, the second electrode is a cathode, and each of the plurality of organic layers is interposed between the light emitting layer and the anode, and is connected to the light emitting layer from the anode. The organic EL display device according to claim 1, further comprising a buffer layer formed by a solution coating method that mediates hole injection into the substrate.

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