JP4760080B2 - Method for manufacturing light emitting device - Google Patents

Description

  The present invention relates to a technical field of, for example, a light emitting device such as an organic EL device, a method for manufacturing the same, and an electronic apparatus including such a light emitting device.

  In an organic EL device which is an example of this type of light emitting device, various techniques for improving display characteristics by resonating light emitted from a light emitting layer included in each pixel portion are disclosed. For example, Patent Document 1 discloses a technique for improving the light directivity while improving the utilization efficiency of light generated in an organic EL element by reducing the power consumption by building a microresonator structure in the display. ing. In Patent Document 2, a dielectric mirror is formed on a planarizing film in which a thin film transistor for driving a light emitting element is embedded, and light generated in the light emitting element is resonated to resonate light generated in the light emitting element. A technique for providing

JP 2001-71558 A Japanese Patent Laid-Open No. 2002-299066

  However, the techniques disclosed in Patent Documents 1 and 2 are the steps of forming an element such as a thin film transistor and an insulating film in which such an element is embedded in order to build an optical resonator structure in a light emitting device such as a display. A separate step of forming a resonator is required. In order to form a resonator structure, for example, a mask for patterning a dielectric mirror is required. Therefore, there are problems that the manufacturing process of the light emitting device becomes complicated and the manufacturing cost increases.

  Therefore, the present invention has been made in view of the above problems, and a light emitting device such as an organic EL device in which an optical resonator structure capable of resonating light of a specific wavelength without increasing the number of manufacturing steps is provided. It is an object to provide a manufacturing method thereof and an electronic device including such a light-emitting device.

In order to solve the above problems, a method for manufacturing a light emitting device according to the present invention includes a substrate, a plurality of light emitting layers provided on the substrate, and a metal material so as to cover the surfaces of the plurality of light emitting layers. A hole injection layer provided at a position where a plurality of the light emitting layers are sandwiched between the cathode, the hole injection layer provided on the substrate side with respect to the hole injection layer, and the hole injection An anode formed of a transparent electrode material, a driving transistor for switching on / off of a current flowing between the anode and the cathode, a first dielectric film stacked in order from the surface of the substrate, A dielectric layer including a two-dielectric film, a third dielectric film, a fourth dielectric film, a fifth dielectric film, a sixth dielectric film, and a seventh dielectric film, and the driving by the dielectric layer; An insulating portion enclosing the element, and the first dielectric film and the second dielectric A base layer is formed by the film, and a gate insulating layer and an interlayer insulating layer of the driving transistor are formed by the third dielectric film and the fourth dielectric film, and the fifth dielectric film, the sixth insulating film, and the A protective layer is formed by the seventh insulating film, and the first dielectric film, the second dielectric film, the third dielectric film, the fourth dielectric film, the fifth dielectric film, the sixth dielectric film, The dielectric film and the seventh dielectric film are each formed to have a uniform thickness, and the plurality of light emitting layers include a blue light emitting layer that emits blue light, a green light emitting layer that emits green light, and a red light. The blue light emitting layer, the green light emitting layer, and the red light emitting layer are separated by an element separating portion, and the dielectric layer is provided with the blue light emitting layer. Exposing the second dielectric film in a portion The blue light-emitting layer is formed on the first opening via the hole injection layer, and the dielectric layer is formed in the portion where the green light-emitting layer is provided. A second opening exposing the fourth dielectric film, the green light emitting layer is formed on the second opening via the hole injection layer, and the red light emitting layer is A first reflective film formed on the seven dielectric films via the hole injection layer, and provided so as to sandwich the plurality of light emitting layers in the stacking direction, and resonates light emitted from the plurality of light emitting layers. And a second reflecting film, wherein the first reflecting film and the second reflecting film resonate the blue light emitted from the blue light emitting layer, and the green light emitted from the green light emitting layer. A second resonating portion that resonates the red light emitted from the red light emitting layer. A first resonance film, wherein the first reflection film is formed of the first dielectric film and the second dielectric film, and The thickness and refractive index of the first dielectric film and the second dielectric film are set so that the blue light can resonate. In the second resonance part, the first reflective film is the third reflective film. The interlayer dielectric layer is formed of a dielectric film and the fourth dielectric film, and the interlayer dielectric layer of the third dielectric film and the fourth dielectric film resonates the green light. A thickness and a refractive index are set so that the first resonance film is formed of the fifth dielectric film and the sixth dielectric film in the third resonance unit, The fifth dielectric film and the sixth dielectric film are set to have a thickness and a refractive index so that the red light can resonate, The cathode is used as two reflective films, and the optical length between the first reflective film and the second reflective film in the first resonance unit is the wavelength of the blue light, the first dielectric film, and The effective refractive index of the second dielectric film, the difference in refractive index between the first dielectric film and the second dielectric film, and each of the anode, the hole injection layer, and the blue light emitting layer The optical length between the first reflective film and the second reflective film in the second resonating portion is set based on the wavelength of the green light and the third dielectric. Effective refractive index of the body film and the fourth dielectric film, difference in refractive index between the third dielectric film and the fourth dielectric film, the anode, the hole injection layer, and the green light emitting layer Are set based on the respective refractive indexes and thicknesses of the first reflective film in the third resonance portion. The optical length between the second reflective film, the wavelength of the red light, the effective refractive index of the sixth dielectric film and the seventh dielectric film, the sixth dielectric film and the seventh dielectric A method of manufacturing a light emitting device, which is set based on a difference in refractive index between body films and a refractive index and a thickness of each of the anode, the hole injection layer, and the red light emitting layer, On the substrate, the first dielectric film, the second dielectric film, the third dielectric film, the fourth dielectric film, the fifth dielectric film, the sixth dielectric film, and the seventh dielectric The dielectric layers are formed by laminating films each with a predetermined thickness, and a first opening for exposing the second dielectric film is formed in a portion of the dielectric layers where the blue light emitting layer is provided. Then, the anode, the hole injection layer, and the blue light emitting layer are sequentially stacked on the first opening, and the dielectric A second opening for exposing the fourth dielectric film is formed in a portion of the body layer where the green light emitting layer is provided, and then the anode, the hole injection layer, and the green are formed on the second opening. A light emitting layer is sequentially stacked, and the anode, the hole injection layer, and the red light emitting layer are sequentially stacked on the seventh dielectric film of the dielectric layers.

  The light emitting device according to the present invention includes a light emitting layer formed by, for example, applying an organic EL material to a predetermined region on a substrate. As a coating method for forming such a light emitting layer, for example, an ink jet method may be mentioned. The drive element is a drive transistor that supplies a drive current to the light emitting layer when the light emitting layer is driven by a current drive type, for example. Note that the driving element is not limited to the driving transistor, and may include any element as long as it is an element that constitutes a pixel circuit provided in the pixel portion including the light emitting layer, for example. Since such a drive element does not have optical transparency, it is formed on the substrate so as to avoid the light emitting layer when viewed from the substrate side. More specifically, for example, in a bottom emission type organic EL device that finally emits light from the substrate side, a drive element such as a drive transistor is formed on the substrate so as to avoid a region where light is emitted from the light emitting layer. Will be.

  The insulating part includes the driving element, thereby insulating and protecting the driving element from other components of the light emitting device. Here, “insulating the drive element” means that the drive element is insulated from a portion excluding such a conductive part while maintaining a state where the conductive part such as required wiring and the drive element are electrically connected. , And protecting. The plurality of dielectric films included in the insulating portion also function as insulating films that insulate the drive element from other components on the substrate, for example.

  The first reflective film portion includes a portion insulated below the light emitting layer among the plurality of dielectric films included in the insulating portion. The plurality of dielectric films substantially function as a dielectric mirror that insulates the drive element from other components in the insulating portion, and a portion extending below the light emitting layer reflects light generated in the light emitting layer. To do. Therefore, if these dielectric layers are extended from the drive element side to the light emitting layer side, for example, one reflection film constituting the optical resonator is formed without adding a separate manufacturing process for forming a dielectric mirror. it can. More specifically, for example, when manufacturing a general liquid crystal device, an optical resonator structure can be built in a light emitting device by using a process for manufacturing an element array substrate on which a thin film transistor is mounted. . In this case, for example, the optical resonator structure can be formed using only the mask used when forming the thin film transistor and the insulating film formed around the transistor on the element array substrate.

  The second reflective film portion is formed on the light emitting layer on the upper side. Therefore, the light emitting device of the present invention can emit light having a specific wavelength by causing light generated in the light emitting layer to resonate between the first reflective film portion and the second reflective film portion.

  Therefore, according to the light emitting device of the present invention, the process of forming the drive element or the insulating part including the drive element is substantially performed at the same time without adding the process of forming the first reflective film part separately. A plurality of dielectric films functioning as dielectric mirrors can be formed, and a light emitting device having excellent display characteristics can be provided without complicating the manufacturing process and increasing the manufacturing cost.

In one aspect of the light emitting device according to the present invention, each of the at least two dielectric films has a thickness and a refraction so as to resonate light having a predetermined wavelength among the light generated in the one light emitting layer. The rate is set.

  According to this aspect, for example, the thickness and refractive index of the dielectric film can be set so that light having a specific wavelength among the light generated in the light emitting layer can resonate. For example, in the light emitting layer, the wavelength of light generated due to film thickness variation or film quality variation varies, and in many cases, light of a specific wavelength cannot be efficiently generated according to the drive current supplied to the light emitting layer. In such a case, by resonating light having a specific wavelength generated in the light emitting layer, light having this wavelength can be selectively amplified and emitted from the light emitting layer. Therefore, light having a target wavelength can be selectively emitted from the light emitting layer with high intensity. In addition, the directivity of light can be increased.

In another aspect of the light emitting device according to the present invention, the light emitting device further includes an element separating portion including the insulating portion, and the first light emitting layer and the second light emitting layer among the plurality of light emitting layers are separated by the element separating portion. Separated from each other, the first light-emitting layer generates light of a first color, and the second light-emitting layer generates light of a second color different from the light of the first color. And

  According to this aspect, light of different colors can be emitted from each of the plurality of light emitting layers. For example, if light of R (red), G (green), and B (blue) is emitted from the corresponding light emitting layers, the light emitting device can perform color display. That is, according to this aspect, without separately forming an optical resonator structure for each light emitting layer that emits light of each color, for example, a plurality of dielectric films extending below the light emitting layer in advance are provided in one of the optical resonator structures. It only has to function as a reflective film. Here, for example, in a light emitting device such as an organic EL device, the element separating portion means a partition that separates the light emitting layers from each other and the entire portion below the partition.

In another aspect of the light emitting device according to the present invention, among the plurality of dielectric films, each of the plurality of dielectric films constituting the first reflective film corresponding to the first light emitting layer is the first dielectric film. The thickness and the refractive index are set so as to resonate light having a predetermined wavelength corresponding to one color, and the first reflective film corresponding to the second light emitting layer among the plurality of dielectric films Each of the plurality of dielectric films constituting the film has a thickness and a refractive index set so as to resonate light having a predetermined wavelength corresponding to the second color.

  According to this aspect, it is possible to resonate light having a specific wavelength for each of different colors. For example, a light emitting device including a light emitting layer that emits light of three colors of RGB has excellent color purity. It is possible to perform image display with excellent color reproducibility using three colors of light. Here, the plurality of dielectric films only need to have the thickness and the refractive index set for each light emitting layer that emits light of each color. More specifically, among the plurality of dielectric layers, the dielectric layer that substantially functions as a dielectric mirror in the first reflective film portion of one light emitting layer is matched to the wavelength of light emitted by the light emitting layer. The thickness and the refractive index may be set. In addition, the dielectric layer that substantially functions as a dielectric mirror in the other light emitting layers only needs to have a thickness and a refractive index that are set in accordance with the wavelength of light emitted by the light emitting layer. Note that such thickness and refractive index may be set in advance when the insulating portion including the drive element is formed.

  In another aspect of the light emitting device according to the present invention, the driving element is a thin film transistor, and the plurality of dielectric films cover the thin film transistor and a base insulating film interposed between the substrates and the gate electrode of the thin film transistor. The interlayer insulating film formed as described above and at least one of the protective film formed on the thin film transistor may also be used.

  According to this aspect, it is possible to form the optical resonator structure without adding a step of separately forming a plurality of dielectric layers included in the first reflective film portion.

  In another aspect of the light emitting device according to the present invention, the first reflective film portion includes an adjustment film that adjusts an optical length so as to resonate the light, and the adjustment film is also used as the protective film. May be.

  According to this aspect, even when the optical length cannot be adjusted by the first reflecting film portion including a plurality of dielectric films, it is possible to resonate light having a specific wavelength. More specifically, for example, when a plurality of light emitting layers that emit light of different colors are formed on the substrate, not only the thickness and refractive index of the plurality of dielectric films are set, but also the first reflective film portion By adjusting the optical length in the portion excluding, it is possible to resonate light having a specific wavelength corresponding to each color in each of the plurality of light emitting layers having a specific wavelength. Such an adjustment film is provided, for example, between the first reflection film portion and the light emitting layer.

  In another aspect of the light emitting device according to the present invention, the light emitting device may further include a transparent electrode provided between the first reflective film portion and the light emitting layer.

  According to this aspect, it is possible to transmit the light generated in the light emitting layer to the first reflective film portion via the transparent electrode. In addition, it is possible to transmit the reflected light reflected by the first reflective film part to the light emitting layer and the second reflective film part via the transparent electrode.

  In another aspect of the light emitting device according to the present invention, the second reflective film portion may include an electrode electrically connected to the light emitting layer.

  According to this aspect, for example, by reflecting light with a cathode such as a metal thin film, it is possible to resonate light using the electrode to be formed in the light emitting device as it is.

In order to solve the above problems, a method for manufacturing a light-emitting device according to the present invention includes a step of forming a plurality of light-emitting layers on a substrate, and light-emitting one of the light-emitting layers on the substrate. A step of forming a driving element, and of the first reflective film and the second reflective film for resonating light generated in the one light emitting layer, the second reflective film is formed on the substrate of the one light emitting layer. Forming a plurality of dielectric films that have different refractive indexes and are stacked on each other and that contain the drive element, the method comprising: In the region overlapping with the one light emitting layer, at least two dielectric films stacked between the one light emitting layer and the substrate among the plurality of dielectric films constitute the first reflective film. It is characterized by.

  According to the method for manufacturing a light-emitting device according to the present invention, a light-emitting device having excellent display characteristics can be manufactured without adding a separate process for forming an optical resonator structure, similarly to the above-described light-emitting device of the present invention. Is possible.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described light emitting device of the present invention.

  According to the electronic apparatus according to the present invention, since the above-described light emitting device of the present invention is provided, a projection display device, a mobile phone, a PDA, an electronic notebook, a word processor, and a viewfinder type capable of high-quality display. Alternatively, various electronic devices such as a monitor direct-view type video tape recorder, a workstation, a videophone, a POS terminal, a touch panel, and an image forming apparatus such as a printer, a copy, and a facsimile using a light emitting device as an exposure head can be realized. Furthermore, the electronic device of the present invention is required to have high-quality display characteristics such as a display device provided in a car navigation system mounted on a vehicle, a display unit provided in an instrument panel indicating an operation state of the vehicle, and the like. Applicable.

  Such an operation and other advantages of the present invention will become apparent from the embodiments described below.

  Hereinafter, embodiments of a light emitting device, a manufacturing method thereof, and an electronic device of the present invention will be described in detail with reference to the drawings. In this embodiment, an organic EL device capable of color display is taken as an example of a light emitting device.

  FIG. 1 is a block diagram showing the overall configuration of the organic EL device 10 of the present embodiment. The organic EL device 10 is a display device that is driven by an active matrix driving method with a built-in driving circuit, and each pixel unit 70 included in the organic EL device 10 includes an organic EL element 72.

  The image display area 110 of the organic EL device 10 is provided with data lines 114 and scanning lines 112 wired vertically and horizontally, and the sub-pixel portions 70R, 70G, and 70B corresponding to the intersections thereof are arranged in a matrix. One pixel unit 70 is configured by arranging these three sub-pixel units as a set. The sub-pixel portions 70R, 70G, and 70B respectively include an organic EL element 72R that emits red light, an organic EL element 72G that emits green light, and an organic EL element 72B that emits blue light. Further, the image display area 110 is provided with power supply lines 117 corresponding to the sub-pixel portions 70R, 70G, and 70B arranged for the respective data lines 114.

  A scanning line driving circuit 130 and a data line driving circuit 150 are provided in the peripheral area located around the image display area 110. The scanning line driving circuit 130 sequentially supplies scanning signals to the plurality of scanning lines 112. The data line driving circuit 150 supplies an image signal to the data line 114 wired in the image display area 110. Note that the operation of the scanning line driving circuit 130 and the operation of the data line driving circuit 150 are synchronized with each other via the synchronization signal line 160. The power supply line 117 is supplied with pixel driving power for driving the pixel portion from an external circuit. Focusing on one pixel portion 70 in FIG. 1, the pixel portion 70 is provided with organic EL elements 72R, 72G, and 72B, and a switching transistor 76 and a driving transistor 74 configured using, for example, TFTs. In addition, a storage capacitor 78 is provided for each sub-pixel portion. The scanning line 112 is electrically connected to the gate electrode of the switching transistor 76, the data line 114 is electrically connected to the source electrode of the switching transistor 76, and the drive is connected to the drain electrode of the switching transistor 76. The gate electrode of the transistor 74 is electrically connected. The power supply line 117 is electrically connected to the drain electrode of the driving transistor 74, and the anode of the organic EL element 72 is electrically connected to the source electrode of the driving transistor 74. In addition to the configuration of the pixel circuit illustrated in FIG. 1, various types of pixel circuits such as a current programming type pixel circuit, a voltage programming type pixel circuit, a voltage comparison type pixel circuit, a subframe type pixel circuit, and the like. Can be adopted.

  Next, a specific configuration of the organic EL device 10 will be described with reference to FIGS. 2 is a plan view showing a schematic configuration of the organic EL device 10, and FIG. 3 is a cross-sectional view taken along the line III-III ′ of FIG. 2 is a plan view of a partial region of the organic EL device 10 as seen from the cathode side shown in FIG. 3, and FIG. 2 does not show the cathode.

  In FIG. 2, the organic EL device 10 includes a substrate 1, a pixel unit 70, a bank unit 47 that is an example of the “element isolation unit” of the present invention, and an organic EL element 72.

  The pixel units 70 are arranged in a matrix in the image display area 110 on the substrate 1. The pixel unit 70 is configured as a set of three sub-pixel units 70R, 70G, and 70B arranged along the horizontal direction in the drawing, and extends along each of the vertical and horizontal directions of the image display region 110 in the drawing. Are arranged. Each of the sub-pixel portions 70R, 70G, and 70B includes an organic EL element 72R that emits red light, an organic EL element 72G that emits green light, and an organic EL element 72B that emits blue light. The bank unit 47 extends in a grid pattern over the entire image display region 110 on the substrate 1 while defining the concave portions 62 in which the organic EL elements 72 are formed in each pixel region.

  3, the organic EL device 10 includes a substrate 1, a base insulating film 2, a driving transistor 74, an interlayer insulating film 4, a protective film 5, organic EL elements 72R, 72G and 72B, and the “element isolation portion” of the present invention. Bank units 47R, 47G and 47B are provided as examples.

  The substrate 1 is, for example, a glass substrate, and transmits light emitted from each organic EL element 72 downward in the drawing. A driving transistor 74 and a switching transistor 76 shown in FIG. 1 are thin film transistors formed so as to avoid a region below the organic EL element 72 in the substrate 1. The substrate 1 includes not only the organic EL element 72 formed on the substrate 1 but also various circuits such as the scanning line driving circuit 130 and the data line driving circuit 150 shown in FIG. Such a circuit is provided in a peripheral region of the image display region 110 on the substrate 1.

  The base insulating film 2 is formed on the surface of the substrate 1 so as to extend over a region where the pixel portions 70R, 70G, and 70B are to be formed. The base insulating film 2 includes dielectric films 2a and 2b stacked in order from the substrate 1 side. The base insulating film 2 insulates the substrate 1 from the drive transistor 74 and is formed on the entire surface of the substrate 1 to reduce changes in device characteristics of the drive transistor 74 due to surface roughness or contamination of the substrate 1. To do. The portion of the base insulating film 2 that extends to the sub-pixel portion 70B constitutes an example of the “first reflective film portion” in the present invention in the sub-pixel portion 70B. The dielectric films 2a and 2b are set in thickness and refractive index so as to resonate light having a predetermined wavelength among the light generated in the organic EL element 72B. The optical resonance structure for resonating the light generated in the organic EL element 72B will be described in detail later.

  The drive transistor 74 is a thin film transistor formed on the base insulating film 2, and is provided in each of the sub-pixel portions 70R, 70B, and 70B. Since the driving transistor 74 does not have optical transparency, the driving transistor 74 is formed on the substrate 1 so as to avoid the organic EL element 72 when viewed from the substrate 1 side. Therefore, the organic EL device 10 includes a bottom emission type organic EL element 72 that finally emits light from the substrate 1 side.

  The driving transistor 74 includes the semiconductor layer 3, the gate insulating film 22, the gate electrode 3a, the source electrode 74s, and the drain electrode 74d. The semiconductor layer 3 is a polycrystalline silicon layer or an amorphous silicon layer formed on the base insulating film 2 using, for example, a low temperature polysilicon technique. On the semiconductor layer 3, the gate insulating film 22 of the switching transistor 76 and the driving transistor 74 is formed so as to be embedded in the semiconductor layer 3. The gate insulating film 22 is formed in common to the sub-pixel portions over the sub-pixel portions 70R, 70G, and 70B so as to cover the semiconductor layer 3. The gate insulating film 22 extends to avoid the lower side of the light emitting layer 50 so as not to block light emitted from each light emitting layer 50 described later. The gate electrode 3a is formed on the gate insulating film 22 together with the scanning line 112 shown in FIG. A part of the scanning line 112 is formed as a gate electrode of the switching transistor 76. The source electrode 74 s and the drain electrode 74 d are formed in contact holes that penetrate the gate insulating film 22. The source electrode 74s and the drain electrode 74d are formed along the inner wall in a contact hole that penetrates an interlayer insulating film 4 to be described later, and are electrically connected to the anode 34. The source electrode 74s of the driving transistor 74 is electrically connected to the power supply line 117 shown in FIG. The driving transistor 74 is turned on / off in response to a data signal supplied to the gate electrode 3 a via the data line 114 shown in FIG. 1 and supplies a driving current to the organic EL element 72. The circuit including such an element is provided so as to avoid the lower side of the organic EL element 72 so as not to block light emitted from the organic EL element 72 to the substrate 1 side. Similar to the driving transistor 74, the switching transistor 76 shown in FIG. 1 is also formed on the base insulating film 2.

  The interlayer insulating layer 4 shown in FIG. 2 is formed on the gate insulating layer 2 by embedding the scanning line 112 and the gate electrode 3 a of the driving transistor 74. On the interlayer insulating layer 4, there are a data line 114, a power supply line 117, and a source electrode 74 s of the driving transistor 74, each made of a conductive material including, for example, aluminum (Al) or ITO (Indium Tin Oxide). Is formed. Contact holes 501 and 502 are formed in the interlayer insulating layer 4 so as to penetrate the interlayer insulating layer 4 and the gate insulating layer 22 from the surface of the interlayer insulating layer 4 to the semiconductor layer 3 of the driving transistor 74. The conductive film constituting the power supply line 117 and the drain electrode 74d is continuously formed so as to reach the surface of the semiconductor layer 3 along the inner walls of the contact holes 501 and 502, respectively. A protective layer 5 is formed on the interlayer insulating layer 4 by embedding the power supply line 117 and the drain electrode 74d. A first bank portion 47a made of, for example, a silicon oxide film is formed on the protective layer 5, and a second bank portion 47b is further formed on the first bank portion 47a. The first bank portion 47a and the second bank portion 47b define a region where the light emitting layer 50 is formed in each sub-pixel portion.

  The interlayer insulating film 4 is formed so as to extend over the sub-pixel portions 70R, 70G, and 70B along the substrate surface of the substrate 1, and then a part of the region where the sub-pixel portion 70B is to be formed is removed. Has been. The interlayer insulating film 4 includes dielectric films 4a and 4b that are sequentially stacked from the substrate 1 side, and constitutes an example of the “first reflective film portion” of the present invention in the sub-pixel portion 70G. The dielectric films 4a and 4b are set in thickness and refractive index so as to resonate light having a predetermined wavelength among the light generated in the organic EL element 72G. The optical resonance structure for resonating the light generated in the organic EL element 72B will be described in detail later.

  The protective film 5 is formed on the interlayer insulating film 4. The protective film 5 is formed so as to extend over the subpixel portions 70R, 70G, and 70B along the substrate surface of the substrate 1, and then a part of the region where the subpixel portions 70G and 70B are to be formed is formed. Has been removed. The protective film 5 includes dielectric films 5a, 5b, and 5c that are sequentially stacked from the interlayer insulating film 4 side. The dielectric films 5a and 5b constitute an example of the “first reflective film portion” in the present invention in the sub-pixel portion 70R. The dielectric films 5a and 5b are set in thickness and refractive index so as to resonate light having a predetermined wavelength among the light generated in the organic EL element 72R. The dielectric film 5c formed on the dielectric film 5b constitutes an example of the “adjustment film” in the present invention. The optical resonance structure for resonating light generated in the organic EL element 72R will be described in detail later.

The bank part 47 is formed on the protective film 5 so as to separate the organic EL elements 72R, 72G, and 72B from each other. The bank unit 47 includes bank units 47R, 47G, and 47B that separate the organic EL elements 72R, 72G, and 72B from each other. More specifically, the bank unit 47R separates the organic EL element 72R and the organic EL element 72B located on the left side of the organic EL element 72R in the drawing. Similarly, the bank part 47G separates the organic EL elements 72R and 72G from each other, and the bank part 47B separates the organic EL elements 72G and 72B from each other. The bank unit 47 includes a first bank unit 47a and a second bank unit 47b, and defines a recess 62 in which the organic EL layer 50 is formed. The first bank portion 47a is an insulating layer made of an inorganic material such as SiO, SiO ₂ or TiO _2. For example, a CVD (Chemical Vapor Deposition) method, a coating method, a sputtering method, etc. are formed on the anode 34. The film forming method is used. Note that an opening is formed in the first bank portion 47a so that the anode 34 is exposed.

  The 2nd bank part 47b is an organic material layer comprised by organic materials, such as an acrylic resin or a polyimide resin, and has a taper shape which tapers toward the upper side in the figure. The second bank part 47b is formed by forming an organic material layer on the first bank part 47a and then patterning the organic material layer using a photolithography technique or the like.

  A portion of the base insulating film 2, the interlayer insulating film 4, and the protective film 5 that extends below the bank portion 47 is included in the insulating portion 30 that includes the drive transistor 74. The insulating unit 30 insulates and protects the drive transistor 74 from other components of the organic EL device 10. However, the insulating unit 30 insulates and protects the drive transistor 74 from portions other than the conductive unit while maintaining a state where the conductive unit such as required wiring and the drive transistor 74 are electrically connected. . The element included in the insulating unit 30 is not limited to the driving transistor 74, and may include the switching transistor 76 and the storage capacitor 78 shown in FIG. That is, each of the insulating sections 30 may include any element as long as it is an element constituting a pixel circuit provided in each of the sub-pixel sections 70R, 70G, and 70B.

  The interlayer insulating film 4 and the protective film 5 are formed between the pixel portions before each organic EL element 72 is formed on the substrate 1, and then a portion extending to a region where the organic EL element 72 is to be formed is removed. Has been. More specifically, in the region where the organic EL element 72B is formed, portions of the interlayer insulating film 4 and the protective film 5 that extend to the sub-pixel unit 70B are removed. The organic EL element 72B is formed on the base insulating film 2 exposed by removing the interlayer insulating film 4 and the protective film 5. Similarly, the organic EL element 72G is formed on the interlayer insulating film 4 exposed by removing the protective film 5, and the organic EL element 72R is formed on the protective film 5. Each of the base insulating film 2, the interlayer insulating film 4, and the protective film 5 has a thickness and a refractive index that can resonate light generated in each organic EL element.

  Therefore, the base insulating film 2, the interlayer insulating film 4, and the protective film 5 function as an insulating film that constitutes the insulating portion 30 that includes the driving transistor 20 in each of the sub-pixel portions 70R, 70G, and 70B, and each organic EL element. The portion extending to the 72 side functions as a reflective film that reflects light generated by the organic EL element.

  The organic EL element 72 includes an anode 34, a hole injection layer 51, a light emitting layer 50, and a cathode 49 that constitutes an example of the “second reflective film portion” of the present invention.

  The anode 34 is formed along the inner wall of the contact hole that penetrates the protective film 5 and the surface of the protective film 5 in each sub-pixel portion, and is electrically connected to the drain electrode 74d extending on the interlayer insulating film 4. Yes. The anode 34 is a transparent electrode extending from the upper side of the insulating unit 30 toward the lower side of the organic EL element 72, and is formed using, for example, ITO which is a transparent electrode material.

  The hole injection layer 51 is formed by applying a hole injection material to the opening formed in the first bank portion 47a.

  The light emitting layer 50 is formed on the hole injection layer 51. The light emitting layer 50 is formed by applying an organic EL material to the recess 62 surrounded by the bank portion 47 using, for example, an ink jet method which is an example of a coating method.

  The cathode 49 is formed so as to cover the surface of the second bank part 47 b and the surface of the light emitting layer 50. The cathode 49 is a metal thin film such as Al formed by using a thin film forming method, and extends on the second bank portion 47 b and the light emitting layer 50. Various layers such as an electron injection layer or an electron transport layer which are separate from the light emitting layer 50 may be interposed between the light emitting layer 50 and the cathode 49. The cathode 49 extends as an electrode physically connected between the plurality of organic EL elements 72 as viewed in plan on the substrate 1 or as one continuous electrode. The cathode 49 reflects the light generated in the light emitting layer 50 and the light having a specific wavelength reflected by the base insulating film 2, the interlayer insulating film 4, or the protective film 5 to the light emitting layer 50 side. Thereby, it is possible to resonate light of a specific wavelength in each of the sub-pixel units 70R, 70G, and 70B.

  Next, the optical resonance structure provided for each of the sub-pixel units 70R, 70G, and 70B will be described in detail for each sub-pixel unit. In the following description, the bank unit 47 is not described separately for each sub-pixel unit. However, as shown in the drawing, the bank unit 47 included in each sub-pixel unit includes R, G, or B according to the emission color of the light-emitting layer. Is attached.

  First, the sub-pixel unit 70B will be described. The recess 62B provided in the sub-pixel portion 70B is formed so that the base insulating film 2 is exposed. More specifically, before forming the organic EL elements 72R, 72G and 72B, a part of the interlayer insulating film 4 and the protective film 5 formed so as to extend over the sub-pixel portions 72R, 72G and 72B. Then, the hole injection layer 51B and the light emitting layer 50B are sequentially formed on the base insulating film 2 to form the organic EL element 72B. Accordingly, only the base insulating film 2 extends from the insulating unit 30 included in the sub-pixel unit 70B to the lower side of the organic EL element 72B.

The dielectric films 2a and 2b constituting the base insulating film 2 are dielectric mirrors whose thickness and refractive index are set so that light having a specific wavelength among the blue light generated in the organic EL element 72B can resonate. Function. More specifically, for example, the dielectric film 2a is a silicon oxide film (SiO ₂ ) having a thickness of 77 nm and a refractive index of 1.5. The dielectric film 2b is a silicon nitride film (SiN) having a thickness of 60 nm and a refractive index of 1.8. The base insulating film 2 including such dielectric films 2a and 2b amplifies only light having a specific wavelength out of blue light generated in the organic EL element 72B formed on the base insulating film 2, and organically Reflected to the EL element 72B side. The light reflected by the base insulating film 2 reaches the cathode 49 through the anode 34 and the light emitting layer 50, and is reflected again toward the light emitting layer 50 by the cathode. As the light reciprocates between the base insulating film 2 and the cathode 49 in this way, a specific wavelength is amplified, and finally a light having a specific wavelength is emitted from the substrate 1 side. That is, the base insulating film 2 and the cathode 49 constitute an optical resonator structure that amplifies light of a specific wavelength among the light generated by the organic EL element 72B. In addition, the dielectric films 2a and 2b included in the base insulating film 2 are set in advance according to the wavelength of light desired to resonate in the sub-pixel unit 70B, thereby providing a step of forming a separate resonator structure. Instead, the sub-pixel unit 70B can resonate light having a predetermined wavelength.

Here, the optical length L ₁ between the base insulating film 2 and the cathode 49 is set to be an integral multiple of 1/2 of the wavelength λ ₁ of the light to be resonated among the light generated in the organic EL element 72B. Yes. In order to amplify the light of the wavelength lambda _1, the optical length L is set so as to satisfy the equation (1). More specifically, the thicknesses and refractive indexes of the dielectric films 2a and 2b included in the base insulating film 2 and the light emitting layer 50B and the hole injection layer 51B interposed between the cathode 49 and the base insulating film 2 are expressed by the formula ( It is set so as to satisfy 1).

式（１）中、λ_１は共振される光の波長、ｎ_ｅｆｆは下地絶縁膜２の有効屈折率、Δ_ｎは下地絶縁膜に含まれる誘電体膜２ａ及び２ｂの屈折率の差、ｎ_ｉ及びｄ_ｉは陽極３４、正孔注入層５１Ｂ及び発光層５０Ｂの夫々の屈折率及び厚みを意味する。θは、発光層５０Ｂ、正孔注入層５１Ｂ及び陽極３４のそれぞれの界面、又は、陽極３４及び下地絶縁膜２の界面に入射する光と、これら界面に立てた法線のなす角度を意味する。

In equation (1), λ ₁ is the wavelength of the resonated light, n _eff is the effective refractive index of the underlying insulating film 2, Δ _n is the difference in refractive index between the dielectric films 2a and 2b included in the underlying insulating film, n _i and d _i mean the refractive index and thickness of the anode 34, the hole injection layer 51B, and the light emitting layer 50B, respectively. θ means an angle formed between light incident on each interface of the light emitting layer 50B, the hole injection layer 51B, and the anode 34, or light incident on the interface of the anode 34 and the base insulating film 2, and a normal line standing on these interfaces. .

A first term of the formula _{(1) (λ 1/2} ) × (n eff / Δ n) is representative of the underlying insulating film 2 to penetrate a depth which light resonating functions as a dielectric mirror Yes. As can be seen from the first term, the effective refractive index n _eff and the refractive index difference Δ _n of the base insulating film 2 are values determined by the materials selected as the dielectric films 2a and 2b, and the wavelength of the light to be resonated. Can be set in advance. Therefore, when the second term on the right side of Included anode 34, the hole injection layer 51B and the refractive index n _i and a thickness d _i of the respective light-emitting layer 50B of the formula (1) is fixed, the first term The effective refractive index n _eff and refractive index difference Δ _n of the base insulating film 2 included may be set in accordance with the wavelength of the light to resonate.

  Since the sub-pixel unit 70B has an optical resonator structure including the base insulating film 2 and the cathode 49, for example, even when the wavelength of blue light generated in the organic EL element 72B is not uniform, It is possible to resonate and amplify only light having a wavelength of. Therefore, according to the optical resonator structure including the base insulating film 2 and the cathode 49, it is possible to selectively emit light having a target wavelength from the substrate side 1 with high intensity. Even if the wavelength of light generated due to variations in film thickness or film quality of the light emitting layer 50B varies, or even when light of a specific wavelength cannot be efficiently generated according to the drive current supplied to the light emitting layer 50B, light emission is possible. By resonating light of a specific wavelength generated in the layer, light of this wavelength can be selectively amplified to emit light with high directivity.

  In addition, since the base insulating film 2 functions as one of the pair of reflective films constituting the optical resonator structure, it is not necessary to add a separate step of forming a reflective film. Therefore, an optical resonator structure can be formed without going through a complicated manufacturing process. More specifically, for example, when manufacturing a general liquid crystal device, an optical resonator structure can be built in the organic EL device 10 by using a process for manufacturing an element array substrate on which a thin film transistor is mounted. It is.

  Next, the sub-pixel unit 70G will be described. The recess 62G provided in the sub-pixel portion 70G is formed so that the interlayer insulating film 4 is exposed, and then the organic EL element 72G is formed. More specifically, before forming the organic EL elements 72R, 72G and 72B, a part of the protective film 5 formed so as to extend over the sub-pixel portions 72R, 72G and 72B is removed, and thereafter An organic EL element 72G is formed by sequentially forming a hole injection layer 51G and a light emitting layer 50G on the interlayer insulating film 4. Accordingly, the base insulating film 2 and the interlayer insulating film 4 extend below the organic EL element 72G from the insulating unit 30 included in the sub-pixel unit 70G.

  The dielectric films 4a and 4b constituting the interlayer insulating film 4 are dielectric mirrors whose thickness and refractive index are set so that light having a specific wavelength can be resonated among green light generated in the organic EL element 72G. Function. More specifically, for example, the dielectric film 4a is a silicon oxide film having a thickness of 92 nm and a refractive index of 1.5. The dielectric film 2b is a silicon nitride film having a thickness of 73 nm and a refractive index of 1.8. The interlayer insulating film 4 including the dielectric films 4a and 4b amplifies only light having a specific wavelength out of green light generated in the organic EL element 72G formed on the interlayer insulating film 4, Reflected to the EL element 72G side. The light reflected by the interlayer insulating film 4 reaches the cathode 49 through the anode 34G and the light emitting layer 50G, and is reflected again by the cathode 49 toward the light emitting layer 50G. As the light reciprocates between the interlayer insulating film 4 and the cathode 49 in this way, a specific wavelength is amplified, and finally a light having a specific wavelength is emitted from the substrate 1 side. That is, the interlayer insulating film 4 and the cathode 49 constitute an optical resonator structure that amplifies light of a specific wavelength among the light generated by the organic EL element 72G.

Here, the optical length L ₂ between the interlayer insulating film 4 and the cathode 49 is set to be an integral multiple of 1/2 of the wavelength λ ₂ of the light to be amplified among the light generated in the organic EL element 72G. Yes. In order to resonate the light having the wavelength λ ₂ , the expression (1) may be applied to the optical length L ₂ as it is. More specifically, the thicknesses and refractive indexes of the dielectric films 4a and 4b included in the interlayer insulating film 4 and the light emitting layer 50G and the hole injection layer 51G interposed between the cathode 49 and the interlayer insulating film 4 are expressed by the formula ( It is set so as to satisfy 1). When calculating the optical length L2, in equation (1), n _eff is the effective refractive index of the interlayer insulating film 4, and Δ _n is the refractive index of the dielectric films 4a and 4b included in the interlayer insulating film 4. The difference, n _i and d _i may be substituted with values indicating the refractive index and thickness of the anode 34, the hole injection layer 51G, and the light emitting layer 50G. θ is an angle formed between light incident on each interface of the light emitting layer 50G, the hole injection layer 51G, and the anode 34, or light incident on the interface of the anode 34 and the interlayer insulating film 4, and a normal line standing on these interfaces.

Accordingly, the optical resonator structure provided with the sub-pixel unit 70G has the refractive index n of each of the anode 34, the hole injection layer 51G, and the light-emitting layer 50G, similarly to the optical resonator structure provided in the sub-pixel unit 70B. _{When i} and the thickness d _i are fixed, the effective refractive index n _eff and the refractive index difference Δ _n of the interlayer insulating film 4 included in the first term are set according to the wavelength of the light to be resonated. Just keep it.

  Since the sub-pixel unit 70G has an optical resonator structure composed of the interlayer insulating film 4 and the cathode 49, for example, green light generated in the organic EL element 72G is light having a uniform wavelength. However, it is possible to resonate and emit only light of a specific wavelength. In addition, since the interlayer insulating film 4 functions as one of a pair of reflective films constituting the optical resonator structure, it is not necessary to add an additional step of forming a reflective film. Therefore, an optical resonator structure can be formed without going through a complicated manufacturing process. More specifically, for example, when manufacturing a general liquid crystal device, an optical resonator structure can be built in the organic EL device 10 by using a process for manufacturing an element array substrate on which a thin film transistor is mounted. It is.

  Next, the sub-pixel unit 70R will be described. The organic EL element 72R provided in the sub-pixel unit 70R is formed so as to be in contact with a part of the protective film 5. The organic EL element 72R includes an anode 34, a hole injection layer 51R and a light emitting layer 50R sequentially formed in the recess 62R, and a cathode 49 that is common to each sub-pixel unit.

  The anode 34 is formed so as to extend on the surface of the protective film 5, and a part of the anode 34 is exposed at the bottom of the recess 62R defined by the banks 47R and 47G. The hole injection layer 51R is formed on the bottom of the recess 62R, that is, on the surface of the anode 34 exposed from the recess 62R. The light emitting layer 50R is formed on the hole injection layer 51R, and the cathode 49 extends thereon. Accordingly, the base insulating film 2, the gate insulating film 22, the interlayer insulating film 4, and the protective film 5 extend from the insulating unit 30 included in the sub-pixel unit 70G to the lower side of the organic EL element 72R.

  The dielectric films 5a and 5b constituting the protective film 5 function as a dielectric mirror whose thickness and refractive index are set so that light having a specific wavelength among the red light generated in the organic EL element 72R can resonate. To do. More specifically, for example, the dielectric film 5a is a silicon oxide film having a thickness of 108 nm and a refractive index of 1.5. The dielectric film 5b is a silicon nitride film having a thickness of 85 nm and a refractive index of 1.8. The dielectric films 5a and 5b amplify only light having a specific wavelength out of red light generated in the organic EL element 72R formed on the protective film 5, and reflect the amplified light to the organic EL element 72R side. The light reflected by the dielectric films 5a and 5b reaches the cathode 49 via the anode 34 and the light emitting layer 50R, and is reflected again by the cathode 49 toward the light emitting layer 50R. As the light reciprocates between the dielectric mirror 5a and 5b and the cathode 49 in this way, a specific wavelength is amplified, and finally a light having a specific wavelength is emitted from the substrate 1 side. Is done. That is, the dielectric mirror composed of the dielectric films 5a and 5b and the cathode 49 constitute an optical resonator structure that amplifies light of a specific wavelength among the light generated by the organic EL element 72R. The dielectric film 5c functions as an adjustment film for adjusting the optical length of the resonated light as will be described later.

A dielectric film 5a and 5b, the optical length L ₃ is set to be an integral multiple of half of the wavelength lambda ₃ of the light to be amplified of the light generated in the organic EL element 72R between the cathode 49 Has been. In order to amplify the light having the wavelength λ ₃ , the equation (1) may be applied to the optical length L ₃ as it is. More specifically, the thicknesses and refractive indexes of the dielectric films 5a and 5b included in the protective film 5 and the light emitting layer 50R and the hole injection layer 51R interposed between the cathode 49 and the protective film 5 are expressed by the formula (1). Is set to satisfy. Here, the dielectric film 5c formed on the uppermost side among the dielectric films included in the protective film 5 adjusts the optical length between the cathode 49 and the dielectric films 5a and 5b constituting the optical resonator structure. This is an adjustment film formed for the purpose. When calculating the optical length L ₃ , n _eff is the effective refractive index of the protective film 5, Δ _n is the difference in refractive index between the dielectric films 5 a and 5 b, and n _i and d _{i in} the formula (1). Means the refractive index and thickness of each of the dielectric film 5c, the anode 34, the hole injection layer 51R, and the light emitting layer 50R. θ means an angle formed between light incident on each interface of the light emitting layer 50R, the hole injection layer 51R, and the anode 34, or light incident on the interface of the anode 34 and the protective film 5, and a normal line standing on these interfaces.

Therefore, similarly to the optical resonator structure provided in the sub-pixel unit 70G, the optical resonator structure provided with the sub-pixel unit 70R has a refractive index n of each of the anode 34, the hole injection layer 51R, and the light-emitting layer 50R. _{When i} and the thickness d _i are fixed, the effective refractive index n _eff and the refractive index difference Δ _n of the protective film 5 included in the first term can be set according to the wavelength of the light to be resonated. That's fine.

  Since the sub-pixel unit 70R has an optical resonator structure including the protective film 5 and the cathode 49, for example, even if the red light generated in the organic EL element 72R is light having a uniform wavelength. It is possible to amplify and emit only light of a specific wavelength. In addition, since the protective film 5 functions as one of the pair of reflective films constituting the optical resonator structure, it is not necessary to add a separate step of forming a reflective film. Therefore, an optical resonator structure can be formed without going through a complicated manufacturing process. More specifically, for example, when manufacturing a general liquid crystal device, an optical resonator structure can be built in the organic EL device 10 by using a process for manufacturing an element array substrate on which a thin film transistor is mounted. It is.

  As described above, according to the organic EL 10, it is possible to resonate light of a predetermined wavelength in each of the sub-pixel units 70R, 70G, and 70B, so that light of three colors having high directivity and excellent color purity. It is possible to display an image using. It goes without saying that the organic EL device 10 of the present embodiment can also be applied to a case where a plurality of monochromatic organic EL elements are provided.

  The organic EL device 10 further includes a sealing plate 20 on the cathode 49 side. The sealing plate 20 is adhered to the substrate 1 with an adhesive, and seals the organic EL element 72 so that the outside air of the organic EL device 10 does not touch the organic EL element 72. The adhesive that bonds the sealing plate 20 onto the substrate 1 includes a thermosetting resin or an ultraviolet curable resin. For example, an epoxy resin, which is an example of a thermosetting resin, is dispensed to the peripheral portion of the sealing plate 20 such as a dispenser. It is applied using an application means.

  On the surface of the sealing plate 20 facing the cathode 49, the peripheral edge of the sealing plate 20 is convex with respect to the central portion, and the organic EL element 72 is sealed with the sealing plate 20. A certain space is interposed between the central portion of the sealing plate 20 and the organic EL element 72. A space between the sealing plate 20 and the organic EL element 72 may be filled with a filler such as an inert gas, resin, or oil, and moisture entering from the outside of the apparatus can be reduced. The space between the sealing plate 20 and the organic EL element 72 may be a vacuum sealed with the sealing plate 20 and the substrate 1. In addition, the sealing plate 20 can use the plastic plate which performed the glass plate or the moisture-proof process, for example. In particular, when a glass substrate is used as the sealing plate 20, since the thermal expansion coefficients of the substrate 1 and the sealing plate 20 that are glass substrates are equal, the difference between the thermal expansion coefficients between these plates. The distortion can be reduced, and the reliability of the entire apparatus can be improved.

  Next, a method for manufacturing the organic EL device of this embodiment will be described with reference to FIG. FIG. 4 is a flowchart showing a process flow of the method for manufacturing the organic EL device of the present embodiment.

  In FIG. 4, a base insulating film 2 is sequentially formed on a substrate 1, and a driving transistor is formed thereon (S101). The driving transistor is formed in a region that avoids a light emitting layer formed in a later step. Here, a laminated film composed of the dielectric films 2 a and 2 b is formed as the base insulating film 2. The dielectric films 2a and 2b have a refractive index and a thickness so that light having a predetermined wavelength among the light generated in the sub-pixel unit 70B can resonate.

  Next, the interlayer insulating film 4 and the protective film 5 are formed on the driving transistor, and an insulating portion covering the driving transistor is formed (S102). Here, the interlayer insulating film 4 is formed on substantially the entire surface of the substrate 1 along the substrate surface of the substrate 1. The source electrode and the drain electrode are formed along the inner wall of the contact hole formed so as to penetrate the interlayer insulating film. At the same time, the interlayer insulating film 4 extending to the region where the sub-pixel unit 70B is to be formed is removed (S103). Next, the protective film 5 is formed on substantially the entire surface of the substrate 1 along the substrate surface of the substrate 1. The anode 34 is formed along the inner wall of the contact hole formed so as to penetrate the protective film. At the same time, the protective film 5 extending to the region where the sub-pixel portions 70B and 70G are to be formed is removed (S104). As a result, the base insulating film 2 and the interlayer insulating film 4 functioning as a reflective film are exposed on the lower side of each light emitting layer, and a reflective film is formed in each of the sub-pixel portions 70R, 70G, and 70B. In the sub-pixel unit 70R, the dielectric films 5a and 5c function as reflection films as they are.

  Next, the anode 34 is formed along the uppermost layer of each of the sub-pixel portions 70R, 70G, and 70B, the hole injection layer 51 and the light-emitting layer 50 are sequentially formed thereon, and each sub-pixel portion is formed on the light-emitting layer 50. A common cathode 49 is formed (S105). Thereby, in each sub-pixel portion, an optical resonator structure is formed in which the cathode 49 is one reflective film and the dielectric film extending downward to the light emitting layer 50 is the other reflective film.

According to such a method for manufacturing an organic EL device, it is possible to manufacture a light emitting device having excellent display characteristics without adding a separate process for forming an optical resonator structure.
(Electronics)
Next, various electronic devices including the above-described organic EL device will be described with reference to FIGS.

<A: Mobile computer>
An example in which the above-described organic EL device is applied to a mobile computer will be described with reference to FIG. FIG. 5 is a perspective view showing the configuration of the computer 1200.

  In FIG. 5, a computer 1200 includes a main body 1204 including a keyboard 1202 and a display unit 1206 having a display unit 1005 configured using an organic EL device (not shown). The display portion 1005 can perform color display and has the same wavelength for each color. Therefore, the display characteristics of the organic EL element that emits light of the three primary colors of red, green, and blue light on the plurality of organic EL display substrates included in the display unit 1005 are enhanced.

<B: Mobile phone>
Further, an example in which the above-described organic EL device is applied to a mobile phone will be described with reference to FIG. FIG. 6 is a perspective view showing the configuration of the mobile phone 1300.

  In FIG. 6, a mobile phone 1300 includes a display unit 1305 having an organic EL device according to an embodiment of the present invention, together with a plurality of operation buttons 1302.

  The display unit 1305 can display a high-quality image in the same manner as the display unit 1005 described above. Accordingly, the plurality of organic EL elements included in the display unit 1305 emit light of the three primary colors of red, green, and blue, so that the display unit 1305 can display an image in full color display.

<C: Printer>
Next, an embodiment related to a printer including the above-described printer head 1 will be described in detail with reference to FIG. FIG. 7 is a schematic sectional view showing the main configuration of the printer according to this embodiment. In the following embodiment, a color printer having four printer heads 1 for YMCK will be described as an example.

  In FIG. 7, the printer includes four image forming units 1001Y, 1001M, 100C, and 1001K for YMCK. These units each have a photosensitive drum 1002 that is an example of the “photosensitive member” according to the present invention and a surrounding area. A cleaner 1011, a charger 1012, the printer head 1, and a developing device 1013 are arranged in this order.

  Next, the configuration of the printer 1000 of this embodiment will be described along with its operation.

  In FIG. 7, after the toner remaining on the surface of the photosensitive drum 1002 in the previous cycle is removed by the cleaner 1011, the surface of the photosensitive drum 1002 is charged by corona discharge or the like by the charger 1012 for the current cycle. . Subsequently, an electrostatic latent image corresponding to the data signal is formed on the surface of the photosensitive drum 1002 by exposure according to the data signal by the printer head 1 of the above-described embodiment. Subsequently, by using toner of a color corresponding to each unit among Y (yellow), M (magenta), C (cyan), and K (black), development is performed by the developing device 1021, and the photosensitive drum 1002 is developed. A toner image that is a visible image by toner adhesion is formed on the surface. On the other hand, the transfer belt 1020 is rotated by rollers 1021, 1022, and the like. Then, the toner image on the photosensitive drum 1002 is transferred onto the transfer belt 1020 while being pressed from the back side by the transfer roller 1014 at the transfer position facing each photosensitive drum 1002. The transferred toner image is further transferred onto a sheet such as a copy sheet conveyed by the conveying device 1030. Then, the image-formed paper is discharged onto a discharge tray via a fixing device (not shown).

  As described above, the printer 1000 according to the present embodiment includes the above-described printer head 100, so that the photosensitive drum 1002 can be exposed at high speed and with high resolution. In addition, the size of the printer can be reduced by downsizing the printer head 100. In particular, in FIG. 7, the printer head 100 can be easily formed in a desired length as the longitudinal direction in the direction of the rotation axis of the photosensitive drum 1002, and further along the circumferential direction of the photosensitive drum 1002. The length of the printer head 100 in this direction is nothing but the length in the short direction, and can be very short. In addition, since the printer head 100 includes the above-described light emitting device of the present invention, it can emit light with high directivity. Therefore, it is very advantageous to apply the printer head 100 according to the present embodiment to a printer having a configuration in which various devices are arranged around the photosensitive drum 1002 as shown in FIG.

  It should be noted that the present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification, and a light-emitting device with such a change In addition, electronic devices are also included in the technical scope of the present invention.

It is a block diagram which shows the whole structure of the organic electroluminescent apparatus of this embodiment. It is a top view which shows the structure of the organic electroluminescent apparatus of this embodiment. It is the III-III sectional view taken on the line of FIG. It is a flowchart which shows the flow of the organic electroluminescent apparatus of this embodiment. It is a perspective view which shows an example of an electronic device in this invention. It is a perspective view which shows the other example of the electronic device in this invention. 1 is a diagram illustrating a schematic configuration of a printer which is an example of an electronic apparatus according to the invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... Base insulating film, 4 ... Interlayer insulating film, 5 ... Protective film, 10 ... Organic EL device, 50 ... Light emitting layer, 51 ... Hole Injection layer, 70 ... pixel portion, 72 ... organic EL element

Claims (1)

A substrate,
A plurality of light emitting layers provided on the substrate;
A cathode formed of a metal material so as to cover the surface of each of the plurality of light emitting layers;
A hole injection layer provided at a position sandwiching the plurality of light emitting layers with the cathode;
An anode formed on the substrate side with respect to the hole injection layer, connected to the hole injection layer, and formed of a transparent electrode material;
A driving transistor for switching on and off of a current flowing between the anode and the cathode;
A first dielectric film, a second dielectric film, a third dielectric film, a fourth dielectric film, a fifth dielectric film, a sixth dielectric film, and a seventh dielectric film, which are sequentially stacked from the surface of the substrate; An insulating part including the drive element by the dielectric layer,
An underlying layer is formed by the first dielectric film and the second dielectric film,
A gate insulating layer and an interlayer insulating layer of the driving transistor are formed by the third dielectric film and the fourth dielectric film,
A protective layer is formed by the fifth dielectric film, the sixth insulating film, and the seventh insulating film,
The first dielectric film, the second dielectric film, the third dielectric film, the fourth dielectric film, the fifth dielectric film, the sixth dielectric film, and the seventh dielectric film are: Each has a uniform thickness,
The plurality of light emitting layers each include a blue light emitting layer that emits blue light, a green light emitting layer that emits green light, and a red light emitting layer that emits red light.
The blue light emitting layer, the green light emitting layer, and the red light emitting layer are separated by an element separation unit,
The dielectric layer has a first opening that exposes the second dielectric film in a portion where the blue light emitting layer is provided,
The blue light emitting layer is formed on the first opening through the hole injection layer,
The dielectric layer has a second opening that exposes the fourth dielectric film in a portion where the green light emitting layer is provided,
The green light emitting layer is formed on the second opening via the hole injection layer,
The red light emitting layer is formed on the seventh dielectric film via the hole injection layer,
A first reflective film and a second reflective film that are provided so as to sandwich the plurality of light emitting layers in the stacking direction and resonate light emitted from the plurality of light emitting layers;
The first reflection film and the second reflection film include a first resonance unit that resonates blue light emitted from the blue light-emitting layer, and a second resonance unit that resonates green light emitted from the green light-emitting layer. A third resonating part that resonates red light emitted from the red light emitting layer, and
In the first resonance unit, the first reflective film is formed of the first dielectric film and the second dielectric film, and the first dielectric film and the second dielectric film are The thickness and refractive index are set so that the blue light can resonate,
In the second resonance part, the first reflective film is formed of the interlayer insulating layer of the third dielectric film and the fourth dielectric film, and the third dielectric film and the fourth dielectric film The interlayer insulating layer of the dielectric film has a thickness and a refractive index set so that the green light can resonate,
And in the third resonating part, the first reflecting film, said fifth dielectric film, and the sixth dielectric film, in which is formed, the fifth dielectric layer and said sixth dielectric film The thickness and refractive index are set so that the red light can resonate.
The cathode is used as the second reflective film,
The optical length between the first reflective film and the second reflective film in the first resonance part is the wavelength of the blue light, and the effective refractive index of the first dielectric film and the second dielectric film. The refractive index difference between the first dielectric film and the second dielectric film, and the refractive index and thickness of each of the anode, the hole injection layer, and the blue light emitting layer are set. And
The optical length between the first reflective film and the second reflective film in the second resonance unit is the wavelength of the green light, the effective refractive index of the third dielectric film, and the fourth dielectric film. The refractive index difference between the third dielectric film and the fourth dielectric film and the respective refractive indices and thicknesses of the anode, the hole injection layer, and the green light emitting layer are set. And
The optical length between the first reflective film and the second reflective film in the third resonance part is the wavelength of the red light, the effective refractive index of the sixth dielectric film, and the seventh dielectric film. The refractive index difference between the sixth dielectric film and the seventh dielectric film, and the refractive index and thickness of each of the anode, the hole injection layer, and the red light emitting layer are set. A method of manufacturing a light emitting device,
The first dielectric film, the second dielectric film, the third dielectric film, the fourth dielectric film, the fifth dielectric film, the sixth dielectric film, and the seventh dielectric on the substrate Each of the body films is laminated with a predetermined thickness to form the dielectric layer,
Forming a first opening exposing the second dielectric film in a portion of the dielectric layer where the blue light emitting layer is provided, and then forming the anode, the hole injection layer, and the first opening on the first opening; The blue light emitting layer is laminated in order,
A second opening exposing the fourth dielectric film is formed in a portion of the dielectric layer where the green light emitting layer is provided, and then the anode, the hole injection layer, and the second opening are formed on the second opening. The green light emitting layer is laminated in order,
The anode, the hole injection layer, and the red light emitting layer are sequentially laminated on the seventh dielectric film of the dielectric layer. A method for manufacturing a light emitting device.

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