JP2007026972A - Light emitting device, its manufacturing method, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent deterioration of a light reflection layer with respect to a structure of making a luminous layer emit light and a technology of forming the structure. <P>SOLUTION: Each unit element U comprises a light reflection layer 21 formed on a substrate 10, a second electrode 35 of semi-transmitting and reflectivity arranged on the opposite side of the substrate 10 interposing the light reflection layer 21, an emitter 33 interposed between the light reflection layer 21 and the second electrode 35, and a light-transmitting first electrode 25 interposed between the light reflection layer 21 and the emitter 33. A resonator structure which resonates the emitted light from the emitter 33 between the light reflection layer 21 and the second electrode 35 is formed in each unit element U. The translucent layer 23 is formed of a light transmitting insulating material and forms the resonator structure by being interposed between the light reflection layer 21 and the first electrode 25 of unit element Ur, but does not overlap with at least a part of the light reflection layer 21 of the unit element Ub which has different resonant wavelength from the unit element Ur. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a structure for emitting light from a light emitting layer and a technique for producing the structure.

  2. Description of the Related Art Conventionally, a light emitting device in which an element (hereinafter referred to as “unit element”) in which a light emitting layer made of a light emitting material such as an organic EL (ElectroLuminescent) material is interposed between a first electrode and a second electrode is arranged on a substrate has been known. Proposed. In this type of light emitting device, there is a problem that it is difficult to ensure sufficient color reproducibility when employed as a display device, for example, because the peak width of the spectrum of emitted light by the light emitting layer is wide and the intensity thereof is low. .

In order to solve this problem, for example, Patent Document 1 discloses a configuration in which a resonator structure for resonating light emitted from a light emitting layer is formed in each unit element. In this configuration, a light reflecting layer (dielectric mirror) is disposed between the substrate and the light transmissive first electrode located on the substrate side with respect to the light emitting layer. The outgoing light from the light emitting layer reciprocates between the light reflecting layer and the second electrode facing each other across the light emitting layer. Then, light having a resonance wavelength corresponding to the optical distance between the light reflecting layer and the second electrode is selectively amplified and then emitted to the observation side. Therefore, light having a narrow spectrum peak width and high intensity can be used for display, and thereby, color reproducibility of the display device can be improved. In addition, by adjusting the optical distance between the light reflection layer and the second electrode for each unit element, it is possible to extract light having a wavelength corresponding to a plurality of colors (for example, red, green, and blue).
International Publication No. 01/039554 Pamphlet

  By the way, in the above structure, it is necessary to form a 1st electrode so that the light reflection layer formed in the surface of a board | substrate may be coat | covered. Therefore, for example, there is a problem that the surface of the light reflecting layer is damaged (corroded) due to adhesion of an etching solution used for patterning the first electrode. As the material for the light reflecting layer, materials such as aluminum and silver are preferably employed. However, since this type of material has low corrosion resistance, damage and deterioration due to the etching solution are particularly remarkable. When the reflection characteristics (for example, reflectance) of the light reflecting layer deteriorate due to such damage, there is a problem that the efficiency of resonance by the resonator structure decreases. This invention is made | formed in view of such a situation, and it aims at the solution of the subject of preventing degradation of a light reflection layer.

In order to solve this problem, a light emitting device according to the present invention includes a light reflecting layer formed on a substrate and a transflective layer disposed on the opposite side of the substrate across the light reflecting layer (for example, each embodiment). Second electrode 35), a light emitting layer interposed between the reflective layer and the semi-transmissive reflective layer, and a light transmissive electrode interposed between the light reflective layer and the light emitting layer (for example, the first electrode of each embodiment) A plurality of unit elements each including one electrode 25) are arranged, and a resonator structure that resonates light emitted from the light emitting layer between the light reflecting layer and the semi-transmissive reflecting layer is formed in each unit element. A device, which is formed of a light-transmitting insulating material and is provided between a light reflecting layer and an electrode of a first unit element (for example, unit element Ur or unit element Ug in each embodiment) among a plurality of unit elements. The resonator structure of the first unit element is interposed, and the resonator structure is included. A first light-transmitting layer (for example, the first light-transmitting layer) that does not overlap at least a part of the light reflecting layer of the second unit element (for example, the unit element Ub of each embodiment) having a resonance wavelength different from that of the first unit element. The translucent layer 23 according to the first embodiment and the first translucent layer 231) according to the second embodiment are provided. For example, the first light transmitting layer has an opening (for example, the opening 23a in FIGS. 1 and 6) at a position corresponding to the light reflecting layer of the second unit element.
According to this configuration, since the light transmitting layer is formed so as to cover the light reflecting layer of the first unit element, it is possible to prevent the light reflecting layer from being deteriorated when the electrode is formed. Further, since the first light transmitting layer is formed so as to cover the light reflecting layer of the first unit element and not overlap the light reflecting layer of the second unit element, the resonance wavelength in the resonator structure is set to the first wavelength. The first unit element and the second unit element can be individually adjusted according to the presence or absence of the light transmitting layer. Therefore, for example, the manufacturing process can be simplified and the manufacturing cost can be reduced as compared with a configuration in which the resonance wavelength of each unit element is adjusted only in accordance with the film thickness of the electrode.

  In a desirable aspect of the present invention, a second light-transmitting layer (for example, the second light-transmitting layer 232 in the second embodiment) formed of a light-transmitting insulating material and distributed over a plurality of unit elements is further provided. The light transmitting layer is interposed between the light reflecting layer and the electrode of each unit element (for example, the unit element Ur in the second embodiment) belonging to the first group among the plurality of unit elements, and the resonator of each unit circuit. While constituting the structure, each unit circuit belonging to the second group different from the first group (for example, the unit element Ug or the unit element Ub in the second embodiment) is interposed between the light reflecting layer and the substrate. According to this aspect, in addition to the presence or absence of the first light-transmitting layer, the resonance wavelength in the resonator structure is determined for each unit element depending on whether or not the second light-transmitting layer is interposed between the light reflecting layer and the electrode. It becomes possible to adjust to. A specific example of this aspect will be described later as a second embodiment.

  In a specific embodiment of the present invention, the electrode is formed of a light transmissive conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), while the first light transmissive layer and the second light transmissive layer are oxidized. It is formed of a light transmissive insulating material such as silicon or silicon nitride. However, from the viewpoint of preventing the refraction and scattering at the interface between the electrode and each light-transmitting layer by making the refractive indexes substantially equal, the electrode is formed of ITO and the first light-transmitting layer and the second light-transmitting layer are formed. A configuration in which the optical layer is formed of silicon nitride is desirable.

The present invention is also specified as a light-emitting device including only the second light-transmitting layer described above (that is, a light-emitting device not including the first light-transmitting layer). That is, the light emitting device includes a light reflecting layer formed on the substrate, a semi-transmissive reflecting layer disposed on the opposite side of the substrate with the light reflecting layer interposed therebetween, and a space between the light reflecting layer and the semi-transmissive reflecting layer. A plurality of unit elements each including a light emitting layer interposed between the light reflecting layer and a light transmissive electrode interposed between the light reflecting layer and the light emitting layer are arranged, and light emitted from the light emitting layer is semitransparent to the light reflecting layer. A light emitting device in which a resonator structure that resonates with a reflective layer is formed in each unit element, is formed of a light-transmissive insulating material, and is distributed over a plurality of unit elements. The resonator structure of the first unit element is configured by interposing between the light reflecting layer and the electrode of one unit element (for example, the unit element Ur in the second embodiment), and the resonance wavelength in the resonator structure is A second unit element different from the first unit element (for example, the second embodiment) A light-transmitting layer (for example, the second light-transmitting layer 232 in the second embodiment) interposed between the light reflecting layer of the unit element Ug or the unit element Ub) in the form and the substrate.
According to this configuration, since the light transmitting layer is formed so as to cover the light reflecting layer of the first unit element, it is possible to prevent the light reflecting layer from being deteriorated when the electrode is formed. In addition, since the light reflecting layer is formed so as to be interposed between the light reflecting layer of the first unit element and the electrode and between the light reflecting layer of the second unit element and the substrate, the resonator The resonance wavelength in the structure can be individually adjusted for the first unit element and the second unit element depending on the presence or absence of the light-transmitting layer. Therefore, for example, the manufacturing process can be simplified and the manufacturing cost can be reduced as compared with a configuration in which the resonance wavelength of each unit element is adjusted only in accordance with the film thickness of the electrode.

  In a preferred aspect of the present invention, one unit element and the other unit elements among the plurality of unit elements have different electrode film thicknesses. According to this aspect, the resonance wavelength in the resonator structure of each unit element can be adjusted with high accuracy in accordance with the film thickness of the electrode in each unit element. In this aspect, the thickness of the electrode made of a single conductive film may be different for each unit element, but in a more desirable aspect, the electrode of the unit element with the electrode of one unit element is The number of stacked conductive films constituting each of them is different. According to this aspect, the resonance wavelength is adjusted for each unit element by determining the total number of the conductive film constituting the electrode for each unit element.

  The light emitting device according to the present invention is used in various electronic devices. A typical example of this electronic device is a device using a light emitting device as a display device. Examples of this type of electronic device include a personal computer and a mobile phone. However, the use of the light emitting device according to the present invention is not limited to image display. For example, the light emitting device of the present invention can also be applied as an exposure device (exposure head) for forming a latent image on an image carrier such as a photosensitive drum by irradiation of light. For example, the light-emitting device of the present invention can be employed as a lighting device (backlight) installed on the back surface of the liquid crystal panel.

  The light emitting device manufacturing method according to the present invention includes a light reflecting layer forming step (for example, step A3 and step A4 in FIG. 2 or steps C1 to C5 in FIG. 7) for forming a light reflecting layer of each unit element on a substrate. The light reflection layer of the first unit element among the plurality of unit elements is covered, and at least one of the light reflection layers of the second unit element having a resonance wavelength different from that of the first unit element. A transparent layer forming step (for example, step A5 and step A6 in FIG. 2 or step C6 and step C7 in FIG. 8) of forming a first transparent layer that does not overlap with the transparent portion by a light-transmitting insulating material; An electrode forming step (for example, step A7 to step A10 in FIG. 3 or step C8 and step C9 in FIG. 8) for forming electrodes of each unit element after the optical layer forming step. According to this method, since the light reflecting layer of the first unit element is covered with the first light transmitting layer prior to the electrode forming step, the light reflecting layer is deteriorated in the electrode forming step (for example, used in forming the electrode). Corrosion caused by the etching solution is prevented. In addition, since the resonance wavelengths of the first unit element and the second unit element are individually adjusted according to the presence or absence of the first light-transmitting layer, for example, the resonance wavelength of each unit element depends only on the film thickness of the electrode. As compared with the configuration in which the adjustment is made, the manufacturing process can be simplified and the manufacturing cost can be reduced.

  In a desirable mode of the manufacturing method according to the present invention, the electrode forming step includes a first layer forming step for forming a first layer constituting an electrode of at least some of the unit elements (for example, the step of FIG. 3). A7 and step A8) and a second layer forming step (for example, step A9 and step A9 in FIG. 3) for forming a second layer for forming electrodes of at least some of the unit elements after the first layer forming step. And the electrode of the second unit element includes the first layer formed in the first layer forming step. The first light-transmitting layer formed in the light-transmitting layer forming step does not cover at least a part of the light reflecting layer in the second unit element. However, in this aspect, the light reflecting layer of the second unit element is the first light-transmitting layer. Since it is covered with one layer, it is possible to effectively prevent deterioration of the light reflecting layer in the second unit element when the first layer and the second layer are formed.

In a desirable mode of the present invention, the light reflecting layer forming step is a first step of forming the light reflecting layer of each unit element belonging to the first group among the plurality of unit elements on the substrate (for example, step C1 in FIG. 7). And a step C2) and a second step (for example, FIG. 7) for forming a first insulating film (for example, the insulating film Lb1 in FIG. 7) covering the light reflecting layer formed in the first step with a light-transmissive insulating material. Step C3) and a third step (for example, Step C4 in FIG. 7) of forming the light reflecting layer of each unit element belonging to the second group different from the first group among the plurality of unit elements on the surface of the first insulating film. And step C5). According to this aspect, in addition to the presence or absence of the first light-transmitting layer, the resonance wavelength in the resonator structure is determined for each unit element depending on whether or not the second light-transmitting layer is interposed between the light reflecting layer and the electrode. It becomes possible to adjust to. A specific example of this aspect will be described later as a second embodiment.
More preferably, it includes a wiring forming step (for example, step A1 in FIG. 2) for forming a plurality of wirings on the substrate prior to the light reflecting layer forming step, and the light transmitting layer forming step is formed in the light reflecting layer forming step. The insulating film forming step (for example, step C6 in FIG. 8) for forming the second insulating film (for example, the insulating film Lb2 in FIG. 8) covering the light reflecting layer, and the first insulating film and the second insulating film are collectively performed A step of selectively removing the first insulating film and the second insulating film by forming an opening at a position corresponding to the light reflecting layer of the second unit element in the second insulating film; 2 and a removal step (for example, step C7 in FIG. 8) for forming a contact hole that penetrates through the insulating film and reaches the wiring. . According to this aspect, since the first insulating film and the second insulating film are selectively removed collectively, the manufacturing process is compared with the method of individually patterning the first insulating film and the second insulating film. Can be simplified and the manufacturing cost can be reduced.

  Also, the method for manufacturing a light emitting device according to the present invention includes a first step (for example, step C1 and step C2 in FIG. 7) of forming a light reflecting layer of a first unit element on a substrate among a plurality of reflecting layers, A second step (for example, step C3 in FIG. 7) of forming a light-transmitting layer that is distributed over a plurality of unit elements and covers the light reflecting layer formed in the first step with a light-transmitting insulating material; A third step (for example, step C4 and step C5 in FIG. 7) of forming a light reflecting layer of a second unit element having a resonance wavelength different from that of the first unit element on the surface of the light transmitting layer; An electrode forming step (for example, step C8 and step C9 in FIG. 8) for forming electrodes of each unit element after the light reflecting layer forming step. According to this method, since the light-transmitting layer that covers the light reflecting layer of the first unit element is formed prior to the electrode forming step, it is possible to prevent the light reflecting layer from being deteriorated when the electrode is formed. In addition, since the light reflecting layer is formed so as to be interposed between the light reflecting layer of the first unit element and the electrode and between the light reflecting layer of the second unit element and the substrate, the resonator The resonance wavelength in the structure can be individually adjusted for the first unit element and the second unit element depending on the presence or absence of the light-transmitting layer. Therefore, for example, the manufacturing process can be simplified and the manufacturing cost can be reduced as compared with a configuration in which the resonance wavelength of each unit element is adjusted only in accordance with the film thickness of the electrode.

<A: First Embodiment>
<A-1: Structure of light emitting device>
FIG. 1 is a cross-sectional view showing a structure of a light emitting device according to a first embodiment of the present invention. As shown in the figure, the light emitting device D has a configuration in which a plurality of unit elements U (Ur, Ug, Ub) arranged in a matrix are sealed on the surface of the substrate 10 by a sealing material 37. ing. Each unit element U is an element that generates light having a wavelength corresponding to one of a plurality of colors (red, green, and blue). That is, the unit element Ur emits red light, the unit element Ug emits green light, and the unit element Ub emits blue light. The light emitting device D in this embodiment is a top emission type in which light generated in each unit element U is emitted toward the side opposite to the substrate 10. Therefore, in addition to a light-transmitting plate material such as glass, an opaque plate material such as a ceramic or metal sheet can be used as the substrate 10.

  A plurality of wirings 12 are formed on the surface of the substrate 10. These wirings 12 are wirings (for example, data lines and scanning lines) that transmit signals for driving each unit element U. The surface of the substrate 10 on which the wirings 12 are formed is covered with a base layer 14. The underlayer 14 is a film body formed of various insulating materials such as a resin material such as acrylic or epoxy, or an inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx).

  A light reflecting layer 21 is formed on the surface of the base layer 14 so as to correspond to each unit element U. The light reflecting layer 21 in the present embodiment is formed in a stripe shape so as to follow the arrangement of the unit elements U. Each light reflecting layer 21 is made of a material having light reflectivity. As such a material, there are various materials such as a single metal such as aluminum or silver, or an alloy mainly composed of aluminum or silver.

  The surface of the base layer 14 on which the light reflecting layer 21 is formed is covered with a light transmitting layer 23 that is continuously distributed over a plurality of unit elements U. The light transmitting layer 23 is a film body used for protecting the light reflecting layer 21 and is formed of a light transmitting insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx). A contact hole H penetrating the light-transmitting layer 23 and the base layer 14 in each thickness direction is formed for each unit element U at a position overlapping the wiring 12 when viewed from the direction perpendicular to the surface of the substrate 10.

  As shown in FIG. 1, the translucent layer 23 covers the light reflecting layer 21 corresponding to the red unit element Ur and the light reflecting layer 21 corresponding to the green unit element Ug. On the other hand, the region of the light transmitting layer 23 that overlaps the light reflecting layer 21 of the blue unit element Ub is an opening 23a that penetrates the light transmitting layer 23 in the thickness direction. Therefore, the light reflecting layer 21 of the blue unit element Ub is exposed from the light transmitting layer 23 through the opening 23a.

  On the surface of the substrate 10 on which the light transmissive layer 23 is formed, the first electrodes 25 are formed separately from each other for each unit element U. Each first electrode 25 has a structure in which a first layer 251 and a second layer 252 are laminated in this order from the substrate 10 side. Each of the first layer 251 and the second layer 252 is formed of a light-transmitting conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). The first electrode 25 is electrically connected to the wiring 12 when the first layer 251 enters the contact hole H and contacts the wiring 12.

  The structure of the portion of the first electrode 25 that overlaps the light reflecting layer 21 is different for each emission color of the unit element U. For example, the first layer 251 and the second layer 252 of the first electrode 25 in each of the red unit element Ur and the blue unit element Ub are distributed so that both overlap the light reflecting layer 21. On the other hand, only the second layer 252 overlaps the light reflecting layer 21 in the first electrode 25 of the green unit element Ug. That is, the first layer 251 of the first electrode 25 of the unit element Ug is formed only in the vicinity of the contact hole H and does not overlap the light reflecting layer 21.

  A bank layer 31 is formed on the surface of the substrate 10 on which the first electrode 25 is formed. The bank layer 31 is a partition wall formed in a lattice shape so as to partition the space on the surface of the substrate 10 for each unit element U. The bank layer 31 is formed of various insulating materials such as an acrylic or epoxy resin material or an inorganic material such as silicon oxide or silicon nitride.

  A light emitter 33 is formed for each unit element U in a space surrounded by the inner wall of the bank layer 31 and having the first electrode 25 as a bottom surface. The light-emitting body 33 has a structure in which a plurality of functional layers including a light-emitting layer made of an organic EL material are stacked. The light emitter 33 of each unit element U includes a light emitting layer that emits light of a wavelength corresponding to the unit element U. The first electrode 25 of each unit element U functions as an anode for applying electric energy to the light emitter 33. On the other hand, a second electrode 35 that functions as the cathode of the light emitter 33 is formed on the surface of each light emitter 33. However, the first electrode 25 may function as a cathode and the second electrode 35 may function as an anode.

  The light-emitting body 33 in the present embodiment has a structure in which three types of functional layers, a hole transport layer, a light-emitting layer, and an electron transport layer, are stacked in this order from the substrate 10 side to the second electrode 35 side. However, the structure of the light emitter 33 is not limited to this example. For example, a configuration in which a hole injection layer is interposed between the hole transport layer and the first electrode 25 or a configuration in which an electron injection layer is interposed between the electron transport layer and the second electrode 35 may be employed. In other words, a configuration in which a light emitting layer is interposed between the first electrode 25 and the second electrode 35 is sufficient.

  The second electrode 35 functions as a transflective layer having a property of transmitting a part of the light reaching the surface and reflecting the rest (that is, transflective). The second electrode 35 in the present embodiment is formed of a light transmissive material such as ITO (Indium Tin Oxide). Thus, even if the second electrode 35 is made of a light-transmitting material, if the sealing material 37 is formed of a material having a refractive index lower than that of the second electrode 35, the second electrode 35 and the sealing material Since part of the light is transmitted and the other part is reflected at the interface with 37, the second electrode 35 can function as a transflective layer. Even when the light-reflective material such as aluminum or silver (or an alloy containing these metals as a main component) is formed thin to form the second electrode 35, the second electrode 35 is used as a semi-transmissive reflective layer. Can function.

  Each unit element U is an element including the light reflecting layer 21, the first electrode 25, the light emitter 33, and the second electrode 35. In each unit element U, a resonator structure for resonating light emitted from the light emitting layer is formed between the light reflecting layer 21 and the second electrode 35. In other words, the light emitted from the light emitting layer of the light emitter 33 reciprocates between the light reflecting layer 21 and the second electrode 35, and only the component of the resonance wavelength in the resonator structure is selectively amplified, and then the second electrode 35. Is transmitted to the observation side (upper side in FIG. 1). Therefore, according to the present embodiment, light having a narrow spectrum peak width and high intensity can be used for display.

The resonance wavelength λ in the resonator structure is determined according to the optical distance L between the light reflection layer 21 and the second electrode 35 as expressed by the following formula (1). However, “Φ (rad)” in the equation (1) is a phase shift generated at both ends of the resonator structure, and more specifically, a phase shift Φ1 (rad) generated when the light is reflected by the light reflecting layer 21. ) And the sum (Φ = Φ1 + Φ2) of phase shifts Φ2 and (rad) that occur when reflected by the second electrode 35. “M” is an integer that makes the optical distance L positive.
(2L) / λ + Φ / (2π) = m (1)
By substituting the desired resonance wavelength λ to be emitted from each unit element U into the equation (1), the optical distance L for realizing optical resonance by this resonance wavelength λ is determined.

  Assuming that the refractive index and the film thickness of the light emitter 33 are substantially the same regardless of the light emission color of each unit element U, the surface of the light reflecting layer 21 facing the light emitter 33 and the light emitter 33 The resonance wavelength is determined according to the optical distance between the surface facing the light reflecting layer 21. The optical distance between the light reflecting layer 21 and the light emitter 33 in this embodiment depends on the film thickness (number of stacked layers) of the first electrode 25 and the presence or absence of the light transmitting layer 23, as will be described below. It is determined individually for each emission color of the unit element U.

As described with reference to FIG. 1, between the light reflecting layer 21 and the light emitter 33 in the red unit element Ur, the first layer 251 and the second layer 252 of the first electrode 25, and the light transmitting layer 23. And intervene. Further, the second layer 252 and the translucent layer 23 of the first electrode 25 are interposed between the light reflecting layer 21 and the light emitting body 33 of the green unit element Ug. Further, the first layer 251 and the second layer 252 of the first electrode 25 are interposed between the light reflecting layer 21 of the blue unit element Ub and the light emitter 33. Now, when the film thickness of the first layer 251 and the second layer 252 of the first electrode 25 is 40 nm and the film thickness of the translucent layer 23 is 70 nm, the light reflection layer 21 and the light emitter in the unit element U of each emission color. The geometric distance to 33 is calculated as follows:
Unit element Ur: 150 nm (= 70 nm [translucent layer 23] +40 nm [first layer 251] +40 nm [second layer 252])
Unit element Ug: 110 nm (= 70 nm [translucent layer 23] +40 nm [second layer 252])
Unit element Ub: 80 nm (= 40 nm [first layer 251] +40 nm [second layer 252])

  The first electrode 25 (the first layer 251 and the second layer 252) is formed of ITO (Indium Tin Oxide), and the light-transmitting layer 23 is formed of silicon nitride having a refractive index substantially the same as that of the first electrode 25. Assuming this, the optical distance between the light reflecting layer 21 and the light emitter 33 is proportional to the geometric distance between them. That is, in this embodiment, the resonance wavelength of the unit element Ur is longer than the resonance wavelength of the unit element Ug, the resonance wavelength of the unit element Ug is longer than the resonance wavelength of the unit element Ub, and so on. The unit element U in the resonator structure is determined by the film thickness of the first electrode 25 and the presence or absence of the translucent layer 23.

<A-2: Manufacturing method>
Next, a method for manufacturing the light emitting device D of the present embodiment will be described with reference to FIGS. 2 and 3. Each layer shown below is formed by various known film forming techniques such as sputtering, CVD (Chemical Vapor Deposition), and vapor deposition. For patterning each layer, for example, a photolithography technique and an etching technique are used.

  First, a plurality of wirings 12 are formed on the surface of the substrate 10 (step A1 in FIG. 2). Subsequently, the base layer 14 is formed on the surface of the substrate 10 (step A2). Next, a light reflective conductive film La1 is formed over the entire surface of the substrate 10 (step A3), and a light reflective layer 21 is formed by patterning the conductive film La1 (step A4). Further, the insulating film Lb1 is formed to a thickness of about 70 nm over the entire surface of the substrate 10 (step A5). The light-transmitting layer 23 is formed by patterning the insulating film Lb1 (step A6). In step A6, a portion of the insulating film Lb1 that overlaps the wiring 12 is removed to form a contact hole H, and a portion that overlaps the light reflecting layer 21 of the blue unit element Ub is removed to form an opening 23a. Is done.

  Next, a conductive film Lc1 to be the first layer 251 of the first electrode 25 is formed to a thickness of about 40 nm over the entire surface of the substrate 10 (step A7 in FIG. 3). The conductive film Lc1 is electrically connected to the wiring 12 through the contact hole H. Subsequently, the first layer 251 of each unit element U is formed in a shape separated from each other by patterning the conductive film Lc1 (step A8). In this step A8, the portion of the conductive film Lc1 that overlaps the light reflecting layer 21 of the green unit element Ug is removed.

  In the step A8, the light reflecting layer 21 in each of the unit element Ur and the unit element Ug is covered with the light transmitting layer 23, so that the etching solution (etchant) used in the step A8 adheres to these light reflecting layers 21. Never do. Further, since the first electrode 25 of the blue unit element Ub includes the first layer 251 (see FIG. 1), the first layer 251 is not removed from the unit element Ub as shown in Step A8 of FIG. Therefore, although the light reflecting layer 21 of the blue unit element Ub is exposed from the light transmitting layer 23 through the opening 23a after the patterning in the process A6, the etching liquid is applied to the light reflecting layer 21 of the unit element Ub in the process A8. Will not adhere. As described above, according to the present embodiment, it is possible to effectively prevent the deterioration of each light reflecting layer 21 due to the adhesion of the etching solution used in step A8.

  Next, a conductive film Lc2 to be the second layer 252 is formed to a thickness of about 40 nm over the entire surface of the substrate 10 (step A9). Then, the second layer 252 of each first electrode 25 is formed by patterning the conductive film Lc2 (step A10). In the present embodiment, the second layer 252 is formed for each of all the unit elements U. Therefore, the light reflection layer 21 is not damaged by the etching solution used in step A10.

  Subsequently, the bank layer 31 is formed by forming a resin film and patterning the resin film (step A11). Further, in the space for each unit element U partitioned by the bank layer 31, the light emitter 33 including the light emitting layer of the emission color corresponding to the unit element U is sequentially formed (step A12). Next, a translucent second electrode 35 is formed so as to face the first electrode 25 with each light emitter 33 interposed therebetween (step A13), and then a sealing material 37 is formed so as to cover the entire surface of the substrate 10. Is installed (see FIG. 1).

  The above is the manufacturing method of the light emitting device D according to the present embodiment. In the light emitting device D of the present embodiment, the resonance wavelength of the resonator structure is adjusted for each emission color of the unit element U according to the film thickness of the first electrode 25 and the presence or absence of the light transmitting layer 23. There is an effect that the number of film formation and patterning can be reduced. This effect will be described in detail as follows.

  As a structure for adjusting the resonance wavelength of the resonator structure while preventing the light reflecting layer 21 from being damaged by the light transmitting layer 23, the light reflecting layers 21 of all the unit elements U are covered by the single light transmitting layer 23. In addition, a configuration (hereinafter referred to as “proportional”) in which the film thickness of the first electrode 25 is individually selected for each emission color of the unit element U is also conceivable. 4 and 5 are process diagrams of a manufacturing method of the light emitting device D according to the comparison.

  As shown in step B10 in FIG. 5, in the comparative light emitting device D, the light reflecting layers 21 of all the unit elements U are covered with a common light transmitting layer 23. On the other hand, the total number of conductive layers constituting each first electrode 25 is different for each unit element U. That is, the first electrode 25 of the red unit element Ur is composed of three layers of the first layer 251, the second layer 252 and the third layer 253, and the first electrode 25 of the green unit element Ug is the second layer 252 and the second layer 252. The first electrode 25 of the blue unit element Ub consists of only the third layer 253. That is, in the present embodiment, the resonance wavelength is adjusted both by adjusting the film thickness of the first electrode 25 and selecting the presence or absence of the light-transmitting layer 23, whereas in contrast, the film thickness of the first electrode 25 is adjusted. The resonance wavelength is adjusted only by the adjustment of. When manufacturing this comparative structure, the process B1 to the process B10 shown in FIGS. 4 and 5 described below are performed following the process A2 of FIG.

  First, the light reflecting layer 21 is formed by forming the conductive film La1 (step B1 in FIG. 4) and patterning the same (step B2). Next, the light-transmitting layer 23 is continuously formed over all the unit elements U by the formation of the insulating film Lb1 (step B3) and the patterning (step B4). Subsequently, the first layer 251 to the third layer 253 of the first electrode 25 are sequentially formed. That is, first, the first layer 251 is formed so as to overlap only the light reflection layer 21 of the unit element Ur by forming the conductive film Lc1 (step B5) and patterning the same (step B6). Second, the second layer 252 is formed so as to overlap the light reflecting layers 21 of the unit element Ur and the unit element Ug by forming the conductive film Lc2 (step B7 in FIG. 5) and patterning the same (step B8). . Thirdly, the third layer 253 is formed so as to overlap the light reflecting layers 21 of all the unit elements U by the formation of the conductive film Lc3 (step B9) and the patterning (step B10). Thereafter, steps A11 to A13 in FIG. 3 are performed.

  As described above, when the proportional light emitting device D is manufactured, five film forming steps (B1, B3, B5, B7, and so on) from the formation of the light reflecting layer 21 to the formation of the first electrode 25 are performed. B9) and five patterning steps (B2, B4, B6, B8, B10) must be carried out. On the other hand, according to the present embodiment, as shown in FIGS. 2 and 3, four film forming steps (A3, A5, A7, A9) from the formation of the light reflecting layer 21 to the formation of the first electrode 25 are performed. ) And four patterning steps (A4, A6, A8, and A10) are sufficient. That is, since it is not necessary to form the third layer 253 in proportion, according to the present embodiment, the manufacturing process can be simplified and the manufacturing cost can be reduced.

  Further, in the comparative configuration, it is necessary to interpose a total of four layers, that is, the light transmitting layer 23 and the first layer 251 to the third layer 253 of the first electrode 25 between the light reflecting layer 21 and the light emitting body 33. In order to obtain the desired optical distance, the thickness of each layer must be relatively thin. On the other hand, according to the present embodiment, a total of three layers of the light transmitting layer 23 and the first layer 251 and the second layer 252 of the first electrode 25 can be interposed between the light reflecting layer 21 and the light emitter 33. Therefore, there is an advantage that the desired optical distance can be obtained even if the thickness of each layer is made larger than the proportional thickness.

<B: Second Embodiment>
<B-1: Structure of Light-Emitting Device D>
Next, a second embodiment of the present invention will be described. In addition, the same code | symbol is attached | subjected about the element similar to 1st Embodiment among this embodiment, and the description is abbreviate | omitted suitably.

  FIG. 6 is a cross-sectional view showing the configuration of the light emitting device D according to this embodiment. As shown in the figure, the first electrodes 25 of all the unit elements U in the present embodiment are composed of only one layer formed of a single conductive film that covers the entire surface of the substrate 10. Therefore, the film thickness of the first electrode 25 of each unit element U is equal.

  Further, the light emitting device D of the present embodiment includes a first light transmissive layer 231 and a second light transmissive layer 232 that are continuously distributed over the plurality of unit elements U so as to cover the entire surface of the substrate 10. The first light-transmitting layer 231 and the second light-transmitting layer 232 are made of a light-transmitting insulating material such as silicon oxide or nitrogen oxide, similarly to the light-transmitting layer 23 of the first embodiment.

  The shape of the 1st light transmission layer 231 is the same as that of the light transmission layer 23 of 1st Embodiment. That is, the first light transmitting layer 231 covers both the light reflecting layer 211 of the red unit element Ur and the light reflecting layer 212 of the green unit element Ug, while corresponding to the light reflecting layer 212 of the blue unit element Ub. The portion to be formed is an opening 23a. Therefore, as in the first embodiment, the light reflecting layer 212 of the blue unit element Ub is exposed from the first light transmitting layer 231 through the opening 23a.

  On the other hand, the second light transmissive layer 232 is a film body disposed closer to the substrate 10 than the first light transmissive layer 231. The second light transmitting layer 232 is interposed between the light reflecting layer 211 of the red unit element Ur and the light emitter 33 (more specifically, between the light reflecting layer 211 and the first light transmitting layer 231). . Therefore, the light reflecting layer 211 of the unit element Ur is protected by the second light transmitting layer 232 in the manufacturing process of the light emitting device D. Further, the second light transmissive layer 232 is interposed in the gap between the light reflecting layer 212 and the substrate 10 of each of the green unit element Ug and the blue unit element Ub. As described above, in the unit element Ur, the second light transmitting layer 232 is interposed between the light reflecting layer 211 and the second electrode 35 to form a resonator structure, whereas the unit element Ug and the unit element Ub are configured. In each of the above, the second light transmitting layer 232 is not interposed between the light reflecting layer 212 and the second electrode 35.

  In the above configuration, the optical distance between the light reflecting layer 21 and the second electrode 35 of each unit element U is determined according to the number of laminated light transmitting layers 23 interposed therebetween. In the present embodiment, the optical distance between the light reflecting layer 21 of each unit element U and the second electrode 35 is a numerical value corresponding to the resonance wavelength corresponding to the emission color of each unit element U ( In other words, the total number of light-transmitting layers 23 interposed between the light reflecting layer 21 and the second electrode 35 is determined for each unit element U so that the formula (1) is satisfied. More specifically, it is as follows.

Between the light reflecting layer 21 and the second electrode 35 of the red unit element Ur, the first light transmitting layer 231, the second light transmitting layer 232, the first electrode 25, and the light emitter 33 are interposed. Further, between the light reflecting layer 21 and the second electrode 35 of the green unit element Ug, the second light transmitting layer 232, the first electrode 25, and the light emitter 33 are interposed, and the first light transmitting layer 231 is interposed. do not do. Further, the first electrode 25 and the light emitter 33 are interposed between the light reflecting layer 21 and the second electrode 35 of the blue unit element Ub, and both the first light transmitting layer 231 and the second light transmitting layer 232 are provided. No intervention. Now, assuming that the film thickness of the first electrode 25 is 80 nm, the film thickness of the second light-transmitting layer 232 is 40 nm, and the film thickness of the first light-transmitting layer 231 is 30 nm, the light reflection in the unit element U of each emission color. The geometric distance between the layer 21 and the light emitter 33 is calculated as follows.
Unit element Ur: 150 nm (= 40 nm [second light transmitting layer 232] +30 nm [first light transmitting layer 231] +80 nm [first electrode 25])
Unit element Ug: 110 nm (= 30 nm [first translucent layer 231] +80 nm [first electrode 25])
Unit element Ub: 80 nm [first electrode 25]

  As described in the first embodiment, assuming that the refractive index of the first electrode 25 and the refractive indexes of the first light transmitting layer 231 and the second light transmitting layer 232 are substantially the same, the light reflecting layer. The optical distance between 21 and the light emitter 33 is proportional to the geometric distance between them. Accordingly, in this embodiment as well, as in the first embodiment, the resonance wavelength of the unit element Ur is longer than the resonance wavelength of the unit element Ug, and the resonance wavelength of the unit element Ug is longer than the resonance wavelength of the unit element Ub. In addition, the resonance wavelength in the resonator structure of each unit element U is determined according to the presence or absence of the first light transmitting layer 231 and the second light transmitting layer 232.

<B-2: Manufacturing method>
Next, a method for manufacturing the light emitting device D of the present embodiment will be described with reference to FIGS. 7 and 8. Step C1 in FIG. 7 is a step performed subsequent to step A2 in FIG. Further, the technology used for film formation and patterning of each layer is the same as that of the first embodiment.

  First, the conductive film La1 is formed over the entire surface of the substrate 10 on which the plurality of wirings 12 and the base layer 14 are formed (step C1 in FIG. 7). Then, by patterning the conductive film La1, the light reflecting layer 211 is formed in a region corresponding to each of the red unit elements Ur (step C2). Subsequently, an insulating film Lb1 (second translucent layer 232) is formed so as to cover the entire base layer 14 on which the light reflecting layer 211 is formed (step C3). The thickness of the insulating film Lb1 is about 40 nm.

  Next, a conductive film La2 is formed so as to cover the entire area of the insulating film Lb1 (step C4). Then, by patterning the conductive film La2, the light reflecting layer 212 is formed in regions corresponding to the green unit element Ug and the blue unit element Ub (step C5).

  Further, an insulating film Lb2 (first light transmitting layer 231) is formed so as to cover the entire region of the insulating film Lb1 on which the light reflecting layer 212 is formed (step C6 in FIG. 8). The thickness of this insulating film Lb2 is about 30 nm. Subsequently, the first light transmitting layer 231 and the second light transmitting layer 232 are formed by collective patterning of the insulating film Lb1 and the insulating film Lb2 (step C7). That is, in this step C7, the second light transmissive layer 232 is formed by removing the portion that becomes the contact hole H in the insulating film Lb1, and the portion that becomes the contact hole H in the insulating film Lb2 and the blue unit element The first light-transmitting layer 231 is formed by removing the portion (opening 23a) overlapping the light reflecting layer 21 of Ub. According to this method, the manufacturing process can be simplified and the manufacturing cost can be reduced as compared with the method of patterning the insulating film Lb1 and the insulating film Lb2 in separate steps.

  Next, a conductive film Lc1 to be the first electrode 25 is formed to a thickness of about 80 nm over the entire surface of the substrate 10 (step C8). Then, the first electrode 25 is formed for each unit element U by patterning the conductive film Lc1 (step C9). Thereafter, Step A11 to Step A13 in FIG. 3 are performed to complete the light emitting device D in FIG.

  As described above, in the present embodiment, five film forming steps (C1, C3, C4, C6, and C8) and four patterning processes from the formation of the light reflecting layer 211 to the formation of the first electrode 25 are performed. Steps (C2, C5, C7, C9) are executed. That is, one patterning process can be reduced as compared with the comparative manufacturing method shown in FIGS.

  Further, in the present embodiment, since the first electrode 25 is composed of one layer, the surface of the first electrode 25 is compared with the first embodiment in which the first electrode 25 is composed of a plurality of layers or in comparison with the first embodiment. It is possible to flatten the (opposite surface to the light emitter 33). If there is a step on the surface of the first electrode 25, a singular point of the electric field (for example, where the electric field is concentrated) may be generated in the vicinity thereof, which may cause deterioration of the first electrode 25. According to the present embodiment, since the surface of the first electrode 25 is flattened, the concentration of the electric field on the surface of the first electrode 25 is less than that in the first embodiment and the comparison. Therefore, according to this embodiment, deterioration of the first electrode 25 can be suppressed.

<C: Modification>
Various modifications can be made to each of the above embodiments. An example of a specific modification is as follows. In addition, you may combine each following aspect suitably.

(1) Modification 1
In the second embodiment, the light emitting device D including both the first light transmitting layer 231 and the second light transmitting layer 232 is exemplified, but the configuration including only the second light transmitting layer 232 (the first light transmitting layer in FIG. 6). A configuration in which the light-transmitting layer 231 is omitted is also employed. Also in this configuration, the second light transmitting layer 232 is positioned in the gap between the light reflecting layer 21 (211) and the first electrode 25 or the second light transmitting layer is formed in the gap between the light reflecting layer 21 (212) and the substrate 10. Depending on whether 232 is located, the resonance wavelength in the resonator structure can be adjusted for each unit element U. In addition to this, in the configuration in which the first light-transmitting layer 231 is omitted, the thickness of the first electrode 25 is selected for each unit element U as described in the first embodiment for each unit element U. The resonance wavelength may be adjusted.

(2) Modification 2
In each embodiment, the configuration in which the elements constituting the unit elements U of the respective emission colors are formed so as to be separated from each other is exemplified, but each element may be continuous over the unit elements U of the respective emission colors. For example, at least one functional layer of the light emitter 33 and the second electrode 35 may be continuously distributed over all the unit elements U. Even in a configuration in which the light emitting layer is continuous over all the unit elements U, the emission color of each unit element U can be made different by appropriately selecting the resonance wavelength of each unit element. Furthermore, the light reflecting layer 21 in the first embodiment may be continuously distributed over all the unit elements U.

  In each embodiment, the configuration in which the second electrode 35 is also used as the transflective layer of the resonator structure is illustrated. However, the transflective layer may be formed separately from the second electrode 35. . The transflective layer in this configuration may be disposed on the light emitter 33 side with respect to the second electrode 35, or may be disposed on the opposite side (observation side).

(3) Modification 3
As shown in FIG. 9, a color filter 41 (41r, 41g, 41b) of colors (red, green, and blue) corresponding to the emission color of each unit element U may be installed. In the same figure, the case where the color filter 41 of each color is formed in the surface of the board | plate material 40 which has a light transmittance is illustrated. The color filter corresponding to each unit element U is means for selectively transmitting light having a wavelength corresponding to the resonance wavelength of the unit element U. For example, a color filter that transmits light corresponding to red is installed on the observation side of the red unit element Ur. According to this configuration, only the component that has passed through the color filter out of the light emitted from each unit element U is emitted to the observation side, so that the color reproducibility can be improved as compared with the configuration in which the color filter is not installed. Moreover, since external light is absorbed by each color filter, there is an advantage that reflection of external light is reduced.

(4) Modification 4
The material of each part which comprises the light-emitting device D, and the method of manufacturing each are changed arbitrarily. For example, in each embodiment, a light emitting layer made of an organic EL material has been exemplified. Can be applied.

<D: Application example>
Next, an electronic apparatus using the light emitting device according to the present invention will be described. FIG. 10 is a perspective view showing the configuration of a mobile personal computer that employs the light emitting device D according to any one of the embodiments described above as a display device. The personal computer 2000 includes a light emitting device D as a display device and a main body 2010. The main body 2010 is provided with a power switch 2001 and a keyboard 2002.

  FIG. 11 shows a configuration of a mobile phone to which the light emitting device D according to the embodiment is applied. A cellular phone 3000 includes a plurality of operation buttons 3001, scroll buttons 3002, and a light emitting device D as a display device. By operating the scroll button 3002, the screen displayed on the light emitting device D is scrolled.

  FIG. 12 shows a configuration of a personal digital assistant (PDA) to which the light emitting device D according to the embodiment is applied. The information portable terminal 4000 includes a plurality of operation buttons 4001, a power switch 4002, and a light emitting device D as a display device. When the power switch 4002 is operated, various kinds of information such as an address book and a schedule book are displayed on the light emitting device D.

  Electronic devices to which the light emitting device according to the present invention is applied include digital still cameras, televisions, video cameras, car navigation devices, pagers, electronic notebooks, electronic papers, calculators, in addition to those shown in FIGS. , Word processors, workstations, videophones, POS terminals, printers, scanners, copiers, video players, devices equipped with touch panels, and the like. Further, the use of the light emitting device according to the present invention is not limited to the display of images. For example, the light emitting device of the present invention can be used as a backlight of a liquid crystal panel.

It is sectional drawing which shows the structure of the light-emitting device which concerns on 1st Embodiment of this invention. It is process drawing for demonstrating the manufacturing method of a light-emitting device. It is process drawing for demonstrating the manufacturing method of a light-emitting device. It is process drawing for demonstrating the manufacturing method of the light-emitting device which concerns on contrast. It is process drawing for demonstrating the manufacturing method of the light-emitting device which concerns on contrast. It is sectional drawing which shows the structure of the light-emitting device which concerns on 2nd Embodiment of this invention. It is process drawing for demonstrating the manufacturing method of a light-emitting device. It is process drawing for demonstrating the manufacturing method of a light-emitting device. It is sectional drawing which shows the structure of the light-emitting device which concerns on a modification. It is a perspective view which shows the specific form of the electronic device which concerns on this invention. It is a perspective view which shows the specific form of the electronic device which concerns on this invention. It is a perspective view which shows the specific form of the electronic device which concerns on this invention.

Explanation of symbols

D: Light emitting device, 10: Substrate, 12: Wiring, 14: Underlayer, H: Contact hole, 21, 211, 212 ... Light reflecting layer, 23 ... Translucent layer, 231 ... First DESCRIPTION OF SYMBOLS 1 light transmission layer, 232 ... 2nd light transmission layer, 25 ... 1st electrode, 251 ... 1st layer, 252 ... 2nd layer, 31 ... Bank layer, 33 ... Luminescent body, 35 ... Second electrode 37... Sealing material 37.

Claims (12)

A light reflection layer formed on the substrate, a transflective layer disposed on the opposite side of the substrate with the light reflection layer interposed therebetween, and the light reflection layer and the transflective layer interposed therebetween A plurality of unit elements each including a light emitting layer and a light transmissive electrode interposed between the light reflecting layer and the light emitting layer are arranged, and light emitted from the light emitting layer is transmitted to the light reflecting layer and the light reflecting layer. A light emitting device in which a resonator structure that resonates with a transflective layer is formed in each unit element,
A resonator structure of the first unit element is formed of a light-transmitting insulating material and interposed between the light reflecting layer of the first unit element and the electrode among the plurality of unit elements. And a first light-transmitting layer that does not overlap at least a part of the light reflecting layer of the second unit element having a resonance wavelength different from that of the first unit element. The light emitting device according to claim 1, wherein the first light transmitting layer has an opening at a position corresponding to the light reflecting layer of the second unit element. A second light transmissive layer formed of a light transmissive insulating material and distributed over a plurality of unit elements;
The second light transmissive layer is interposed between the light reflecting layer and the electrode of each unit element belonging to the first group among the plurality of unit elements and constitutes a resonator structure of each unit circuit. The light emitting device according to claim 1, wherein the light emitting device is interposed between the light reflecting layer and the substrate of each unit circuit belonging to a second group different from the first group. A light reflection layer formed on the substrate, a transflective layer disposed on the opposite side of the substrate with the light reflection layer interposed therebetween, and the light reflection layer and the transflective layer interposed therebetween A plurality of unit elements each including a light emitting layer and a light transmissive electrode interposed between the light reflecting layer and the light emitting layer are arranged, and light emitted from the light emitting layer is transmitted to the light reflecting layer and the light reflecting layer. A light emitting device in which a resonator structure that resonates with a transflective layer is formed in each unit element,
Formed of a light-transmitting insulating material and distributed over the plurality of unit elements, and the first unit element is interposed between the light reflecting layer and the electrode of the first unit element among the plurality of unit elements. A translucent layer that constitutes the resonator structure of the unit element and is interposed between the light reflecting layer and the substrate of the second unit element that has a resonance wavelength different from that of the first unit element A light emitting device comprising: The light emitting device according to any one of claims 1 to 4, wherein a film thickness of the electrode is different from one unit element and the other unit element among the plurality of unit elements. The light emitting device according to claim 5, wherein the number of conductive films constituting each of the electrode of the one unit element and the electrode of the other unit element is different.   The electronic device which comprises the light-emitting device in any one of Claims 1-6. A light reflection layer formed on the substrate, a transflective layer disposed on the opposite side of the substrate with the light reflection layer interposed therebetween, and the light reflection layer and the transflective layer interposed therebetween A plurality of unit elements each including a light emitting layer and a light transmissive electrode interposed between the light reflecting layer and the light emitting layer are arranged, and light emitted from the light emitting layer is transmitted to the light reflecting layer and the light reflecting layer. A method of manufacturing a light emitting device in which a resonator structure that resonates with a transflective layer is formed in each unit element,
A light reflection layer forming step of forming the light reflection layer of each unit element on the substrate;
The light reflecting layer of the second unit element that covers the light reflecting layer of the first unit element among the plurality of unit elements and has a resonance wavelength different from that of the first unit element. A light-transmitting layer forming step of forming a first light-transmitting layer that does not overlap at least part of the light-transmitting insulating material;
An electrode forming step of forming the electrode of each unit element after the light transmitting layer forming step. The electrode forming step includes a first layer forming step of forming a first layer constituting the electrode of at least some of the plurality of unit elements, and at least some of the plurality of unit elements. A second layer forming step of forming a second layer forming the electrode of the element after the first layer forming step,
The method for manufacturing a light emitting device according to claim 8, wherein the electrode of the second unit element includes a first layer formed in the first layer forming step. The light reflecting layer forming step includes
A first step of forming, on the substrate, the light reflecting layer of each unit element belonging to the first group among the plurality of unit elements;
A second step of forming a first insulating film covering the light reflecting layer formed in the first step with a light-transmissive insulating material;
The third step of forming the light reflecting layer of each unit element belonging to a second group different from the first group among the plurality of unit elements on a surface of the first insulating film. Method for manufacturing the light emitting device. Including a wiring forming step of forming a plurality of wirings on the substrate prior to the light reflecting layer forming step,
The translucent layer forming step includes
An insulating film forming step of forming a second insulating film covering the light reflecting layer formed in the light reflecting layer forming step;
A step of selectively removing the first insulating film and the second insulating film collectively, wherein an opening is formed at a position corresponding to the light reflecting layer of the second unit element in the second insulating film; Forming the light reflecting layer and forming a contact hole that penetrates through the first insulating film and the second insulating film to reach the wiring, and in the electrode forming process, The manufacturing method of the light-emitting device according to claim 10, wherein the electrode of each unit element is electrically connected to the wiring through the contact hole. A light reflection layer formed on the substrate, a transflective layer disposed on the opposite side of the substrate with the light reflection layer interposed therebetween, and the light reflection layer and the transflective layer interposed therebetween A plurality of unit elements each including a light emitting layer and a light transmissive electrode interposed between the light reflecting layer and the light emitting layer are arranged, and light emitted from the light emitting layer is transmitted to the light reflecting layer and the light reflecting layer. A method of manufacturing a light emitting device in which a resonator structure that resonates with a transflective layer is formed in each unit element,
A first step of forming the light reflecting layer of the first unit element on the substrate among the plurality of reflecting layers;
A second step of forming a light-transmitting layer that is distributed over the plurality of unit elements and covers the light reflecting layer formed in the first step with a light-transmitting insulating material;
Forming a light reflecting layer of a second unit element having a resonance wavelength different from that of the first unit element on a surface of the light transmitting layer;
An electrode forming step of forming the electrodes of the unit elements after the second light reflecting layer forming step.

Images