JP2010198754A - Organic el device and manufacturing method of organic el device, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic EL device which has little variations in brightness among the pixels even if rate of reflection of light of a reflecting layer is deteriorated in the manufacturing process. <P>SOLUTION: The organic EL device 100 is provided with a substrate 20, a pixel 2 which is arranged on the substrate 20 and emits any of light of three different wavelength, a first reflecting layer 42 and a second reflecting layer 44 installed corresponding to the pixel 2, pixel electrodes 23b, 25a which are arranged on the first reflecting layer 42 and the second reflecting layer 44, an organic functional layer 30 which is arranged on the pixel electrodes 23b, 25a and includes a luminous layer 34, and a negative electrode 38 which is arranged on the organic functional layer 30. The first reflecting layer 42 consists of a first metal material, and a second reflecting layer 44 consists of a second metal material having a higher resistance against a pattern processing than the first metal material. In the pixel 2, any one of the first reflecting layer 42 or the second reflecting layer 44 is arranged according to the wavelength of light to be emitted. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an organic EL device, a method for manufacturing the organic EL device, and an electronic apparatus.

  An organic electroluminescence device (hereinafter referred to as an organic EL device) has a configuration in which an anode, an organic functional layer including at least a light emitting layer, and a cathode are laminated. In the organic EL device, light generated in the light emitting layer is emitted to the anode side or the cathode side. In the case of a so-called top emission type organic EL device in which light generated in the light emitting layer is emitted to the cathode side, a metal having light reflectivity, such as silver, is preferably used for the anode.

  Silver has high light reflectivity, but is extremely reactive, and thus is susceptible to chemical or physical damage during film formation or pattern processing in the manufacturing process. When such damage is caused, the light reflectance is reduced. Although it is possible to make it difficult to be damaged by using an alloy obtained by adding other metals to silver, it is difficult to obtain sufficient resistance. On the other hand, a method of suppressing deterioration of reflection characteristics by laminating a metal oxide on a thin film layer made of silver or an alloy containing silver has been proposed (for example, Patent Document 1, Patent Document 2, and (See Patent Document 3).

JP 2004-139780 A JP 2004-192890 A JP 2004-355918 A

  However, even in the above-described method, the surface of the thin film layer may be damaged in the process of laminating the metal oxide on the thin film layer made of silver or an alloy containing silver. There was a problem that the reflectivity was lowered. In addition, there is a case where the degree of light reflectance is greatly reduced depending on the wavelength of reflected light, and there is a problem that brightness varies between pixels that emit light of different wavelengths.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 An organic EL device according to this application example corresponds to a substrate, pixels arranged on the substrate that emit light of at least three different wavelengths, and the pixels on the substrate. A reflective layer having light reflectivity, a first electrode having light transmissivity disposed on the reflective layer, and at least a light emitting layer disposed on the first electrode. And an organic functional layer including the second electrode having light transmissivity disposed on the organic functional layer, wherein the reflective layer includes a first reflective layer made of a first metal material, At least a second reflective layer made of a second metal material having a higher resistance to patterning than the first metal material, and the pixel has the second reflection layer according to the wavelength of the emitted light. Either one of the reflective layers or the second reflective layer is disposed And wherein the door.

  According to this configuration, the organic EL device includes either one of the first reflective layer and the second reflective layer in each pixel. The second reflective layer is made of a second metal material having higher resistance to pattern processing than the first metal material of the first reflective layer. Therefore, in the second reflective layer, the light reflectance is less reduced due to damage of the reflective layer in the manufacturing process of the organic EL device than in the first reflective layer. By the way, when the light reflectance of a reflective layer falls, the degree to which a light reflectance falls changes with wavelengths of the light to reflect. Therefore, the first reflection in which the light reflectance is lowered by disposing the second reflective layer in correspondence with the pixel that emits light having a wavelength whose light reflectivity is lower than that of light of other wavelengths. A light reflectance higher than that of the layer can be obtained, and the difference between the light reflectance of light of this wavelength and the light reflectance of light of other wavelengths can be reduced. Thereby, it is possible to provide an organic EL device in which the brightness is more uniform between pixels that emit light of different wavelengths.

  Application Example 2 In the organic EL device according to the application example described above, the first metal material may be made of silver or an alloy containing silver.

  According to this configuration, the first metal material is made of silver having a high light reflectance or an alloy containing silver. For this reason, the light reflectivity of a reflection layer can be raised.

  Application Example 3 In the organic EL device according to the application example described above, the second metal material may be made of aluminum or an alloy containing aluminum.

  According to this configuration, the second metal material is made of aluminum or an alloy containing aluminum. For this reason, the tolerance with respect to pattern processing can be improved rather than the 1st metal material which consists of silver or an alloy containing silver.

  Application Example 4 In the organic EL device according to the application example described above, the organic EL device further includes a first conductive layer provided in the pixel in which the first reflective layer is disposed, and the first conductive layer includes: The first reflective layer may be disposed on the side opposite to the first electrode so as to overlap the first reflective layer in a planar manner.

  According to this configuration, the first conductive layer is disposed between the first reflective layer and the substrate. For this reason, the adhesion of the first reflective layer to the substrate is improved. Thereby, it can suppress that a 1st reflection layer peels from a base | substrate by pattern processing etc. in the manufacturing process of an organic electroluminescent apparatus.

  Application Example 5 In the organic EL device according to the application example described above, the second conductive layer provided in the pixel on which the first reflective layer is disposed and the surface of the second conductive layer are covered. An insulating layer, and the second conductive layer is disposed between the first reflective layer and the first electrode so as to overlap the first reflective layer in a plane. The insulating layer may further cover side surfaces of the first conductive layer and the first reflective layer.

  According to this configuration, the first reflective layer is disposed between the first conductive layer and the second conductive layer, and the side surface thereof is covered with the insulating layer that covers the second conductive layer. Thereby, it can suppress more effectively that a 1st reflection layer is damaged in a manufacturing process.

  Application Example 6 In the organic EL device according to the application example, the three different wavelengths are a wavelength corresponding to red light, a wavelength corresponding to green light, and a wavelength corresponding to blue light. The first reflective layer is arranged corresponding to the pixel emitting the red light and the pixel emitting the green light, and the second reflective layer corresponding to the pixel emitting the blue light May be arranged.

  According to this configuration, it is possible to provide an organic EL device capable of full color display or full color light emission using red light, green light, and blue light. By the way, when the light reflectivity of the reflective layer is lowered, the light reflectivity of the blue wavelength light is larger than that of the red and green wavelengths. Corresponding to the pixels that emit light having such a blue wavelength, a second reflective layer having a lower light reflectance reduction in the manufacturing process than the first reflective layer is disposed. As a result, a higher light reflectance than that of the first reflective layer having a reduced light reflectance with respect to the light of the blue wavelength is obtained, so that the difference from the light reflectance of the light of the wavelengths corresponding to red and green is reduced. Can be small.

  Application Example 7 In the organic EL device according to the application example described above, the second electrode further has light reflectivity, and is provided between the first reflective layer and the second electrode, and An optical resonator that resonates light from the organic functional layer may be formed between the second reflective layer and the second electrode.

  According to this configuration, the light having the resonance wavelength is amplified by the optical resonator. Thereby, even if the light reflectance of a reflective layer falls, the brightness | luminance of the light inject | emitted can be raised. In addition, by adjusting the resonance wavelength of the optical resonator to one of red light, green light, and blue light, a white light emitting material can be used as the light emitting material of the organic functional layer regardless of the wavelength of light emitted from the pixel. It can be used in common.

  Application Example 8 In the organic EL device according to the application example described above, the layer thickness of the first electrode in the pixel that emits the green light is the first electrode in the pixel that emits the blue light. The layer thickness of the first electrode in the pixel that emits red light may be greater than the layer thickness of the first electrode in the pixel that emits green light.

  According to this configuration, the resonance wavelength of the resonator can be adjusted according to the wavelengths of the red light, the green light, and the blue light emitted from the pixel by the layer thickness of the first electrode.

  Application Example 9 In the organic EL device according to the application example described above, a color filter corresponding to the red light and a color filter corresponding to the green light, which are disposed on the light emission side of the pixel. And a color filter corresponding to the blue light.

  According to this configuration, among the light output from the optical resonator, red light, green light, and blue light are transmitted through the color filter, so that it is possible to provide an organic EL device that is more excellent in color reproducibility.

  Application Example 10 An electronic apparatus according to this application example includes the organic EL device described above.

  According to this configuration, since the electronic apparatus includes the above-described organic EL device, it is possible to provide an electronic apparatus that can obtain more uniform brightness between pixels in the display unit.

  Application Example 11 An organic EL device manufacturing method according to this application example includes pixels that emit light of at least three different wavelengths arranged on a substrate, a first reflective layer having light reflectivity, and a second light reflective layer. A reflective layer, a light-transmissive first electrode, a light-reflective and light-transmissive second electrode, and at least sandwiched between the first electrode and the second electrode An organic functional layer including a light emitting layer, wherein the first reflective layer is made of silver or an alloy containing silver according to the wavelength of the light emitted from the pixel. And the second reflective layer made of aluminum or an alloy containing aluminum.

  According to this method, either one of a first reflective layer made of silver or an alloy containing silver and a second reflective layer made of aluminum or an alloy containing aluminum are formed in each pixel. Since aluminum has a higher resistance to patterning than silver, the second reflective layer has less light reflectivity reduction due to damage to the reflective layer in the manufacturing process than the first reflective layer. By the way, when the light reflectance of a reflective layer falls, the degree to which a light reflectance falls changes with wavelengths of the light to reflect. Therefore, by forming the second reflective layer corresponding to the pixel that emits light having a wavelength whose light reflectivity is lower than that of light of other wavelengths, the first reflection whose light reflectivity is reduced is formed. A light reflectance higher than that of the layer can be obtained, and the difference between the light reflectance of light of this wavelength and the light reflectance of light of other wavelengths can be reduced. Thereby, it is possible to manufacture an organic EL device having more uniform brightness between pixels that emit light of different wavelengths.

  Application Example 12 In the method of manufacturing the organic EL device according to the application example, the three different wavelengths include a wavelength corresponding to red light, a wavelength corresponding to green light, and a wavelength corresponding to blue light. The first reflective layer is formed corresponding to the pixel emitting the red light and the pixel emitting the green light, and the second corresponding to the pixel emitting the blue light. A reflective layer may be formed.

  According to this method, an organic EL device capable of full color display or full color emission with red light, green light, and blue light can be manufactured. Here, when the light reflectivity of the reflective layer decreases, the light with a blue wavelength has a higher degree of decrease in the light reflectivity than the light with red and green wavelengths. Corresponding to the pixel that emits light having a blue wavelength, a second reflective layer is formed in which a decrease in light reflectance in the manufacturing process is smaller than that in the first reflective layer. As a result, a light reflectance higher than that of the first reflective layer having a reduced light reflectance with respect to the light having the blue wavelength can be obtained, so that the difference from the light reflectance of the light having the red and green wavelengths is reduced. be able to.

  Application Example 13 In the method of manufacturing the organic EL device according to the application example, the step of forming the second reflective layer corresponding to the pixel that emits the blue light on the substrate, The first electrode is formed on the second reflective layer, and the first conductive layer is formed on the base corresponding to the pixel emitting the red light and the pixel emitting the green light. A step of forming the first reflective layer on the first conductive layer; and the first reflective layer on the first reflective layer so as to planarly overlap the first reflective layer. You may have the process of forming an electrode, the process of forming the said organic functional layer on the said 1st electrode, and the process of forming the said 2nd electrode on the said organic functional layer. .

  According to this method, since the second reflective layer is formed before the first reflective layer is formed, the first reflective layer is damaged by pattern processing or the like in the step of forming the second reflective layer. Can be avoided. In addition, since the first conductive layer is formed between the first reflective layer and the substrate, the adhesion of the first reflective layer to the substrate is improved. Thereby, it is suppressed that the 1st reflective layer peels from a base | substrate by pattern processing etc. Further, since the first electrode is formed on the second reflective layer before forming the first reflective layer, the surface of the second reflective layer is the first electrode in the step of forming the first reflective layer. Protected by. Thereby, it is possible to prevent the second reflective layer from being damaged by pattern processing or the like in the step of forming the first reflective layer and the step of forming the first electrode on the first reflective layer.

  Application Example 14 In the method of manufacturing the organic EL device according to the application example, a first conductive material corresponding to the pixel emitting the red light and the pixel emitting the green light on the substrate. Forming a layer, forming the first reflective layer on the first conductive layer so as to planarly overlap the first conductive layer, and on the first reflective layer, Forming a second conductive layer so as to planarly overlap the first reflective layer; surfaces of the substrate and the second conductive layer; the first conductive layer and the first reflective layer; A step of forming an insulating layer so as to cover the side surface, a step of forming the second reflective layer on the insulating layer so as to correspond to the pixels emitting blue light, and on the insulating layer The first electrode on a region overlapping the first reflective layer in plan and on the second reflective layer Forming, on the first electrode, and forming the organic functional layer, the organic functional layer, and forming the second electrode may have a.

  According to this method, since the first conductive layer is formed between the first reflective layer and the substrate, the adhesion of the first reflective layer to the substrate is improved. In addition, since the second conductive layer is formed on the first reflective layer, the surface of the first reflective layer is protected. Furthermore, before forming the second reflective layer, the surfaces and side surfaces of the laminated first conductive layer, first reflective layer, and second conductive layer are covered with an insulating layer, so that the second reflective layer In the step of forming, the surface of the first reflective layer is protected. Thereby, it is possible to prevent the first reflective layer from being damaged by pattern processing or the like in the step of forming the second reflective layer and the step of forming the first electrode.

  Application Example 15 In the method of manufacturing the organic EL device according to the application example, the step of forming the first electrode corresponds to the pixel that emits the red light on the insulating layer. Forming a first electrode layer so as to planarly overlap the first reflective layer; and planarizing the first reflective layer corresponding to the pixels emitting the green light on the insulating layer. Forming a second electrode layer on the first electrode layer so as to overlap with the first electrode layer, and emitting the blue light on the insulating layer A third electrode layer so as to overlap the second reflective layer in a plane corresponding to the pixel and to overlap the second electrode layer on the second electrode layer. Forming the step.

  According to this method, a pixel that emits green light is formed by stacking the first electrode layer, the second electrode layer, and the third electrode layer in the pixel that emits red light to form the first electrode. The first electrode is formed by stacking the second electrode layer and the third electrode layer, and the first electrode is formed by the third electrode layer in a pixel that emits blue light. Thereby, the layer thickness of the first electrode is formed so that the pixel emitting green light is thicker than the pixel emitting blue light, and the pixel emitting red light is thicker than the pixel emitting green light. Is done. Therefore, the resonance wavelength of the resonator can be adjusted according to the wavelengths of the red light, the green light, and the blue light emitted from the pixel by the layer thickness of the first electrode.

  Application Example 16 In the method of manufacturing the organic EL device according to the application example, after the step of forming the second electrode, the color corresponding to the red light on the light emission side of the pixel. You may further have the process of arrange | positioning a filter, the color filter corresponding to the said green light, and the color filter corresponding to the said blue light.

  According to this configuration, among the light output from the optical resonator, red light, green light, and blue light are transmitted through the color filter, so that an organic EL device with better color reproducibility can be manufactured.

1 is a block diagram showing an electrical configuration of an organic EL device according to a first embodiment. 1 is a plan view schematically showing an organic EL device according to a first embodiment. 1 is a cross-sectional view showing a schematic configuration of an organic EL device according to a first embodiment. The graph which compared the light reflectivity R of silver and AlCu. The graph which compared the ideal value of the light reflectivity R of silver, and the measured value of the light reflectivity R at the time of laminating | stacking ITO. 6 is a flowchart illustrating a method for manufacturing the organic EL device according to the first embodiment. The figure explaining the manufacturing method of the organic electroluminescent apparatus concerning 1st Embodiment. The figure explaining the manufacturing method of the organic electroluminescent apparatus concerning 1st Embodiment. The figure explaining the manufacturing method of the organic electroluminescent apparatus concerning 1st Embodiment. Sectional drawing which shows schematic structure of the organic EL apparatus which concerns on 2nd Embodiment. 9 is a flowchart for explaining a method for manufacturing an organic EL device according to a second embodiment. The figure explaining the manufacturing method of the organic electroluminescent apparatus concerning 2nd Embodiment. The figure explaining the manufacturing method of the organic electroluminescent apparatus concerning 2nd Embodiment. Sectional drawing which shows schematic structure of the organic EL apparatus which concerns on 3rd Embodiment. 9 is a flowchart for explaining a method for manufacturing an organic EL device according to a third embodiment. The figure explaining the manufacturing method of the organic electroluminescent apparatus concerning 3rd Embodiment. The figure explaining the manufacturing method of the organic electroluminescent apparatus concerning 3rd Embodiment. FIG. 11 illustrates a mobile phone as an electronic apparatus.

  The present embodiment will be described below with reference to the drawings. In the drawings to be referred to, in order to show the configuration in an easy-to-understand manner, film thicknesses of components, ratios of dimensions, and the like are appropriately changed. In addition, illustrations of components other than those necessary for the description may be omitted.

(First embodiment)
<Organic EL device>
First, the configuration of the organic EL device according to the first embodiment will be described with reference to the drawings. FIG. 1 is a block diagram showing an electrical configuration of the organic EL device according to the first embodiment. FIG. 2 is a plan view schematically showing the organic EL device according to the first embodiment. Specifically, it is a plan view when viewed from the sealing portion 50 side shown in FIG. FIG. 3 is a cross-sectional view illustrating a schematic configuration of the organic EL device according to the first embodiment. Specifically, FIG. 3 is a partial cross-sectional view taken along line AA ′ of FIG.

  As shown in FIG. 1, an organic EL device 100 is an active matrix organic EL device using a thin film transistor (hereinafter referred to as TFT) as a switching element. The organic EL device 100 includes a substrate 10, a scanning line 16 provided on the substrate 10, a signal line 17 extending in a direction intersecting the scanning line 16, and a power supply line 18 extending in parallel with the signal line 17. I have. In the organic EL device 100, the pixel 2 is arranged in a region surrounded by the scanning line 16 and the signal line 17. For example, the pixels 2 are arranged in a matrix along the extending direction of the scanning lines 16 and the extending direction of the signal lines 17.

  The pixel 2 includes a switching TFT 11, a driving TFT 12, a storage capacitor 13, an anode 24, a cathode 38 as a second electrode, and an organic functional layer 30. The organic functional layer 30 includes a hole transport layer 32 (see FIG. 3), a light emitting layer 34 (see FIG. 3), and an electron transport layer 36 (see FIG. 3) that are sequentially stacked. The anode 24, the cathode 38, and the organic functional layer 30 constitute an organic electroluminescence element (organic EL element) 8. In the organic EL element 8, light is obtained by recombining holes injected from the hole transport layer 32 and electrons injected from the electron transport layer 36 in the light emitting layer 34 of the organic functional layer 30.

  Connected to the signal line 17 is a data line driving circuit 14 including a shift register, a level shifter, a video line, and an analog switch. Further, a scanning line driving circuit 15 having a shift register and a level shifter is connected to the scanning line 16.

  In the organic EL device 100, when the scanning line 16 is driven and the switching TFT 11 is turned on, the image signal supplied via the signal line 17 is held in the holding capacitor 13 and is driven according to the state of the holding capacitor 13. The on / off state of the TFT 12 is determined. When electrically connected to the power supply line 18 via the driving TFT 12, a drive current flows from the power supply line 18 to the anode 24, and further a current flows to the cathode 38 through the organic functional layer 30. The light emitting layer 34 of the organic functional layer 30 emits light with a luminance corresponding to the amount of current flowing between the anode 24 and the cathode 38.

  As shown in FIG. 2, the pixel 2 has a substantially rectangular planar shape, for example. The four corners of the rectangular shape of the pixel 2 may be rounded. The pixel 2 is a minimum unit of display of the organic EL device 100, and emits one of light having at least three different wavelengths. In addition, the wavelength here means a peak wavelength, and the wavelength of the light actually emitted from the pixel 2 may have dispersibility around the peak wavelength.

  In the present embodiment, the organic EL device 100 includes a pixel 2R that emits red (R) light, a pixel 2G that emits green (G) light, and a pixel 2B that emits blue (B) light. (Hereinafter, when the corresponding colors are not distinguished, they are also simply referred to as pixels 2). Further, the organic EL device 100 includes organic EL elements 8R, 8G, and 8B corresponding to the pixels 2R, 2G, and 2B (in the following, when the corresponding colors are not distinguished, the organic EL element 8 is simply used). Also called).

  In the organic EL device 100, one pixel group 4 is composed of the pixels 2R, 2G, and 2B, and various colors are displayed by appropriately changing the luminance of the pixels 2R, 2G, and 2B in each pixel group 4. It can be carried out. Therefore, an organic EL device capable of full color display or full color light emission can be provided.

  On the substrate 10, outside the region where the pixels 2 are arranged, a terminal portion 60 (see FIG. 3) for applying a driving voltage to the organic EL device 100, a cathode wiring (not shown), an inspection circuit ( (Not shown) and the like are arranged.

  As shown in FIG. 3, the organic EL device 100 includes a driving TFT 12, an interlayer insulating layer 22, a protective layer 26, a planarizing layer 28, a first reflective layer 42, a second TFT on a substrate 10. The reflective layer 44, the anode 24, the partition wall 48, the organic functional layer 30, the cathode 38, and the sealing portion 50 are provided. The organic EL device 100 is a top emission type in which light emitted from the organic functional layer 30 is emitted to the sealing unit 50 side.

Since the organic EL device 100 is a top emission type, the substrate 10 may use either a light-transmitting material or a light-impermeable material. Examples of the translucent material include glass, quartz, and resin (plastic and plastic film). Examples of the light-impermeable material include ceramics such as alumina, metal sheets such as stainless steel that have been subjected to insulation treatment such as surface oxidation, thermosetting resins and thermoplastic resins, and films thereof (plastic films). Can be given. The substrate 10 may be covered with a protective layer made of, for example, silicon oxide (SiO ₂ ).

  The driving TFT 12 is provided on the substrate 10 corresponding to the pixel 2. The driving TFT 12 includes a semiconductor film 12a, a gate insulating layer 21, a gate electrode 12g, a drain electrode 12d, and a source electrode 12s. A source region, a drain region, and a channel region are formed in the semiconductor film 12a. The semiconductor film 12 a is covered with the gate insulating layer 21. The gate electrode 12g is positioned so as to planarly overlap the channel region of the semiconductor film 12a with the gate insulating layer 21 interposed therebetween.

  Although not shown in FIG. 3, the gate insulating layer 21, the gate electrode 12g, and the drain electrode 12d are made of, for example, titanium (or titanium nitride), aluminum, and titanium (or titanium nitride) sequentially from the substrate 10 side. It has a stacked configuration. The lower layer side titanium protects aluminum, and the upper layer side titanium plays a role of improving conductivity with the anode 24. Note that the gate insulating layer 21, the gate electrode 12g, and the drain electrode 12d may have a structure in which other metal such as molybdenum is stacked on aluminum, or may be a single layer of aluminum or other metal. Good.

  The interlayer insulating layer 22 covers the gate electrode 12g and the gate insulating layer 21. The drain electrode 12d is conductively connected to the drain region of the semiconductor film 12a through a contact hole provided in the interlayer insulating layer 22. Similarly, the source electrode 12s is conductively connected to the source region of the semiconductor film 12a through a contact hole.

  The protective layer 26 covers the interlayer insulating layer 22, the drain electrode 12d, and the source electrode 12s. The protective layer 26 is made of, for example, silicon nitride (SiN). The planarization layer 28 is formed so as to cover the protective layer 26. The planarization layer 28 has a substantially flat surface that does not reflect irregularities due to the drain electrode 12d, the source electrode 12s, and other wiring portions. The planarization layer 28 is made of, for example, a photosensitive acrylic resin. In the following description, the substrate 10 and the driving TFT 12 formed on the substrate 10, the interlayer insulating layer 22, the protective layer 26, and the planarizing layer 28 are collectively referred to as the base body 20.

  On the substrate 20, one of the first reflective layer 42 and the second reflective layer 44 is provided corresponding to the wavelength of the light emitted from the pixel 2. More specifically, the first reflective layer 42 is provided in the pixels 2R and 2G, and the second reflective layer 44 is provided in the pixel 2B. It is preferable that the first reflective layer 42 and the second reflective layer 44 have a high light reflectance so that light with high luminance is emitted from the pixels 2R, 2G, and 2B.

  The first reflective layer 42 is made of silver or an alloy containing silver, for example, APC (Ag—Pd—Cu alloy). Therefore, the first reflective layer 42 has a high light reflectance. The layer thickness of the first reflective layer 42 is, for example, about 120 nm.

  The second reflective layer 44 is made of aluminum or an alloy containing aluminum, for example, an alloy of aluminum and copper (AlCu). Therefore, the second reflective layer 44 has higher resistance than the first reflective layer 42 with respect to pattern processing and the like. Here, the pattern processing refers to a series of processes such as resist coating, exposure, development, etching, and resist stripping when performing pattern processing using a photolithography method. The material of the second reflective layer 44 may be an alloy of aluminum and neodymium (AlNd). The layer thickness of the second reflective layer 44 is, for example, about 80 nm.

  The anode 24 is provided for each pixel 2. The anode 24 has a different configuration corresponding to the pixel 2. In the pixels 2R and 2G, a conductive layer 23a as a first conductive layer, a first reflective layer 42, and a pixel electrode 23b as a first electrode are stacked to constitute an anode 24. In the pixel 2B, the second reflective layer 44 and the pixel electrode 25a as the first electrode are stacked to constitute the anode 24. In the following description, a structural unit having a function as an anode is referred to as an anode 24 including a case where components are different.

  The conductive layer 23 a is located between the base body 20 and the first reflective layer 42. The conductive layer 23 a has a planar shape that is slightly larger than the first reflective layer 42. The conductive layer 23 a is conductively connected to the drain electrode 12 d through a contact hole 28 a that penetrates the planarizing layer 28 and the protective layer 26. The conductive layer 23a is made of, for example, polycrystalline ITO (Indium Tin Oxide). The layer thickness of the conductive layer 23a is, for example, about 50 nm.

  The first reflective layer 42 is provided on the conductive layer 23a. Since the conductive layer 23a is located between the first reflective layer 42 and the base body 20, the adhesion of the first reflective layer 42 to the base body 20 is improved.

  The pixel electrode 23 b is provided on the first reflective layer 42 so as to overlap the first reflective layer 42 in a planar manner. It is preferable that the pixel electrode 23b is made of a material having a high work function so as to have light transmissivity and increase the efficiency of hole injection into the organic functional layer 30. The pixel electrode 23b is made of, for example, amorphous ITO. The material of the pixel electrode 23b may be IZO (Indium Zinc Oxide). The layer thickness of the pixel electrode 23b is, for example, about 10 nm.

  The second reflective layer 44 is provided on the base body 20. The pixel electrode 25 a is provided on the second reflective layer 44 so as to cover the second reflective layer 44. The pixel electrode 25 a is conductively connected to the drain electrode 12 d through a contact hole 28 a that penetrates the planarization layer 28 and the protective layer 26. The pixel electrode 25a is preferably made of a material having light transparency and a high work function. The pixel electrode 25a is made of, for example, polycrystalline ITO. The material of the pixel electrode 25a may be IZO. The layer thickness of the pixel electrode 25a is, for example, about 50 nm.

  The partition wall 48 is provided so as to cover the base body 20 and the anode 24. The partition wall 48 has an opening 48 a that partitions the region of the pixel 2. The opening 48a is formed slightly smaller than the anode 24 in plan view. The partition wall 48 is made of acrylic resin or the like.

The organic functional layer 30 is provided in the opening 48 a of the partition wall 48 and is located on the anode 24. The organic functional layer 30 includes a hole transport layer 32, a light emitting layer 34, and an electron transport layer 36, which are sequentially stacked. The hole transport layer 32 is formed of, for example, a triphenylamine derivative (TPD), a pyrazoline derivative, an arylamine derivative, a stilbene derivative, a triphenyldiamine derivative, or the like. The light emitting layer 34 is formed using, for example, an aluminum quinolinol complex (Alq ₃ ) or the like as a host material and rubrene or the like as a dopant. The electron transport layer 36 is made of, for example, Alq ₃ or the like.

  In the organic functional layer 30 according to the present embodiment, the holes injected from the hole transport layer 32 and the electrons injected from the electron transport layer 36 are recombined in the light emitting layer 34, whereby R, G, B The light emission of any one of can be obtained. The organic functional layer 30 is not limited to the above configuration, and may be configured with four or more functional layers including the light emitting layer 34.

  The cathode 38 is provided so as to cover the organic functional layer 30 and the partition wall 48. The cathode 38 has light transmittance and light reflectivity. That is, the cathode 38 has a half mirror shape having transflective properties. The cathode 38 is made of an alloy of magnesium and silver (MgAg), for example. The material of the cathode 38 may be calcium, sodium, lithium, or a metal compound thereof.

  In the organic EL device 100, there is an optical resonator that resonates light emitted from the organic functional layer 30 between the first reflective layer 42 and the cathode 38 and between the second reflective layer 44 and the cathode 38. Is formed. The light emitted from the organic functional layer 30 reciprocates between the first reflective layer 42 and the cathode 38, and between the second reflective layer 44 and the cathode 38, and a resonance wavelength corresponding to the optical distance. Is amplified and emitted to the cathode 38 side. For this reason, the luminance of the emitted light can be increased and light having a narrow spectrum can be extracted.

The resonant wavelength in the optical resonator can be adjusted by changing the optical distance L between the first reflective layer 42 or the second reflective layer 44 and the cathode 38. If the peak wavelength of the spectrum of light desired to be extracted out of the light emitted from the organic functional layer 30 is λ, the following relational expression is established. Φ (radian) is a phase shift generated when light emitted from the organic functional layer 30 is reflected at both ends of the optical resonator (for example, the first reflective layer 42 or the second reflective layer 44 and the cathode 38). Represents.
(2L) / λ + Φ / (2π) = m (m is an integer)

  In the pixels 2R and 2G, the optical distance L is determined by the layer thickness of the pixel electrode 23b positioned on the first reflective layer 42 and the layer thickness of the organic functional layer 30. In the pixel 2 </ b> B, the optical distance L is determined by the layer thickness of the pixel electrode 25 a located on the second reflective layer 44 and the layer thickness of the organic functional layer 30. In the organic EL device 100, in the pixels 2R, 2G, and 2B that emit light of R, G, and B wavelengths, the layers of the organic functional layer 30 are set so that the respective resonance wavelengths in the optical resonator become a predetermined wavelength λ. The optical distance L is adjusted by appropriately setting the thickness.

  A sealing unit 50 is disposed on the cathode 38. The sealing unit 50 includes a sealing substrate 52 and an adhesive layer 54. The sealing substrate 52 and the adhesive layer 54 have a function of protecting the organic EL element 8. The adhesive layer 54 is formed so as to cover the cathode 38, and the sealing substrate 52 is fixed on the cathode 38. The adhesive layer 54 is made of, for example, a translucent urethane resin, acrylic resin, epoxy resin, polyolefin resin, or the like. The sealing substrate 52 is made of light-transmitting glass or a resin such as an acrylic resin or a styrene resin.

A gas barrier layer made of, for example, SiO ₂ , SiN, silicon oxynitride (SiON), or the like, is used to prevent the deterioration of the organic EL element 8 due to oxygen or moisture entering between the cathode 38 and the adhesive layer 54. Etc. may be provided.

  A terminal portion 60 is provided outside the area where the pixels 2 are arranged. The terminal part 60 includes a wiring part 62 located on the interlayer insulating layer 22 and an electrode part 64 located on the planarizing layer 28. The wiring part 62 is covered with the protective layer 26. The electrode part 64 is conductively connected to the wiring part 62 through a contact hole that penetrates the planarization layer 28 and the protective layer 26.

<Reflective layer>
Here, the first reflective layer 42 and the second reflective layer 44 included in the organic EL device 100 will be further described with reference to the drawings. FIG. 4 is a graph comparing the light reflectivity R between silver (Ag) and AlCu. FIG. 4 shows measured values of the light reflectance R when ITO is laminated on Ag, AlCu, and Ag with different thicknesses of 5 nm, 7.5 nm, 10 nm, and 12.5 nm. The vertical axis represents the light reflectance R (%), and the horizontal axis represents the light wavelength λ (nm).

  FIG. 5 is a graph comparing the ideal value of the light reflectance R of Ag and the measured value of the light reflectance R when ITO is laminated. FIG. 5 shows the deviation (the rate of decrease in the light reflectance R) of the measured value of the light reflectance R when ITO is laminated on the Ag with respect to the ideal value (simulated value) of the light reflectance R of Ag. Yes. The vertical axis represents the reduction rate (%) of the light reflectance R, and the horizontal axis represents the light wavelength λ (nm). In FIGS. 4 and 5, the amplification effect of the light having the resonance wavelength by the optical resonator is not taken into consideration.

  As described above, in the organic EL device 100, the pixels 2R and 2G are provided with the first reflective layer 42 made of silver such as APC or an alloy containing silver, and the pixels 2B are made of aluminum such as AlCu or aluminum. A second reflective layer 44 made of an alloy containing the second reflective layer 44 is provided.

  Silver has a high light reflectivity R, but has a very reactive characteristic, low stability in chemical resistance, light resistance, gas resistance, etc., and low processing accuracy and adhesion. For this reason, it is susceptible to chemical or physical damage in a film forming process or a pattern processing series in the manufacturing process of the organic EL device. When silver is damaged in this way, the light reflectivity R of the reflective layer is lowered. Although it is possible to make it difficult to be damaged by using an alloy obtained by adding other metals to silver, it is difficult to obtain sufficient resistance.

  For this reason, a structure is often employed in which a metal oxide such as ITO is laminated on a reflective layer made of silver or an alloy containing silver to protect the surface. However, even in such a configuration, in the step of forming a layer made of a metal oxide on the reflective layer made of silver or an alloy containing silver, the surface of the reflective layer is damaged to some extent. The light reflectance R may decrease.

  On the other hand, aluminum has a light reflectance R that is inferior to silver, but has a higher resistance to film formation processes and a series of pattern processing in the manufacturing process than silver. Therefore, the second reflective layer 44 made of aluminum or an alloy containing aluminum is less susceptible to chemical or physical damage in the manufacturing process than the first reflective layer 42 made of silver or an alloy containing silver, and reflects light. There is little decrease in the rate R.

  As shown by a solid line in FIG. 4, silver (Ag) exhibits a light reflectance R of 90% or more for light having a wavelength λ of 400 nm to 500 nm, and the light reflectance R increases as the wavelength λ increases. . The light reflectivity R of Ag exceeds 94% for B (Blue) light having a wavelength λ of 470 nm, and is even higher for G light having a wavelength λ of 530 nm and R light having a wavelength of 610 nm, although not shown.

  On the other hand, as shown by a thick solid line in FIG. 4, AlCu exhibits substantially the same light reflectance R at around 92% for light having a wavelength λ of 400 nm to 500 nm. The light reflectance R of Ag exceeds the light reflectance R of AlCu when the wavelength λ exceeds 420 nm, and is 2% or more higher than the light reflectance R of AlCu for B (Blue) light having a wavelength λ of 470 nm. .

  On the other hand, as shown by a broken line in FIG. 4, when ITO is laminated on Ag with different thicknesses of 5 nm, 7.5 nm, 10 nm, and 12.5 nm, the light reflectance R is significantly larger than that of Ag alone. To drop. The degree to which the light reflectance R decreases is larger as the thickness of the ITO is thicker, and is larger as the wavelength λ is smaller. For example, when the thickness of ITO is 10 nm, the light reflectance R of B (Blue) light having a wavelength λ of 470 nm is reduced by about 8% or more to about 86% compared to the case of Ag alone.

  When the light reflectivity R when ITO is laminated on Ag is compared with the light reflectivity R of AlCu, for B (Blue) light having a wavelength λ of 470 nm, the light reflectivity R is the same regardless of the thickness of the ITO. It becomes lower than AlCu. For example, when the thickness of ITO is 10 nm, the light reflectance R is nearly 6% lower than that of AlCu for B (Blue) light having a wavelength λ of 470 nm.

  Next, as shown in FIG. 5, even when an optical resonator is provided, when ITO is laminated on Ag with different thicknesses of 5 nm, 10 nm, and 27 nm, the light reflectivity R is lower than that of Ag alone. However, it decreases significantly as the wavelength λ is smaller. For example, as shown by a two-dot chain line in FIG. 5, when ITO is laminated with a thickness of 10 nm on Ag, B (Blue) light having a wavelength λ of 470 nm reflects light more than when only Ag shown by a solid line is shown. The rate R decreases by about 12%. Therefore, when ITO is laminated on Ag, it is difficult to improve the light reflectivity R to the level of Ag only, even with a configuration including an optical resonator. In FIG. 5, the difference in the actual measurement value with respect to the ideal value of the light reflectance R in the case of only Ag is considered to be due to a measurement error or the like.

  From the above results, in the configuration in which the pixel 2R, 2G, 2B is laminated with a metal oxide such as ITO on the reflective layer made of silver or an alloy containing silver, the pixel 2B is compared with the pixel 2R, 2G. The light reflectance R is greatly reduced, and the brightness varies between the pixels 2R, 2G, and 2B. Further, in the pixel 2B, the light reflectance R is lower than in the case where a reflective layer made of AlCu is disposed.

  In the organic EL device 100 according to the present embodiment, since the pixel 2B is provided with the second reflective layer 44 made of AlCu or the like, it is higher than the first reflective layer 42 in which the light reflectance is reduced as described above. Light reflectance R is obtained. For this reason, the difference between the light reflectance R in the pixel 2B and the light reflectance R in the pixels 2R and 2G can be reduced. Thereby, the brightness in the pixel 2B is improved, and an organic EL device in which the brightness is more uniform among the pixels 2R, 2G, and 2B can be provided.

<Method for manufacturing organic EL device>
Next, a method for manufacturing the organic EL device according to the first embodiment will be described with reference to the drawings. FIG. 6 is a flowchart illustrating a method for manufacturing the organic EL device according to the first embodiment. 7, 8 and 9 are views for explaining a method of manufacturing the organic EL device according to the first embodiment.

  As shown in FIG. 6, the organic EL device manufacturing method includes a substrate preparation step S10, a second reflection layer formation step S20, a pixel electrode / conductive layer formation step S31, and a first reflection layer formation step S40. The pixel electrode forming step S32, the organic functional layer forming step S50, the cathode forming step S60, and the sealing portion forming step S70 are included.

  In the substrate preparation step S10, the driving TFT 12, the interlayer insulating layer 22, the protective layer 26, and the planarization layer 28 are formed on the substrate 10 by a known method, and the substrate 20 is prepared. In the base 20, an opening 28 b penetrating the planarizing layer 28 is provided at a position where the contact hole 28 a is formed in the pixel electrode / conductive layer forming step S 31.

  Next, in the second reflective layer forming step S20, as shown in FIG. 7A, the second reflective layer 44 is formed in the region of the pixel 2B on the substrate 20. First, a reflective film made of AlCu is formed on the substrate 20 by sputtering, for example. Subsequently, AlCu pattern processing is performed using a photolithography method to form the second reflective layer 44 in the region of the pixel 2B. In the pattern processing, an acid solution such as nitric acid is used as an etching solution.

  Next, in the pixel electrode / conductive layer forming step S31, as shown in FIG. 7B, the conductive layer 23a is formed in the region of the pixels 2R and 2G, and the pixel electrode 25a is formed in the region of the pixel 2B. First, a conductive film made of polycrystalline ITO is formed so as to cover the base 20 and the second reflective layer 44 by, for example, sputtering. Before forming the conductive film, the protective layer 26 in the opening 28b of the planarizing layer 28 is opened, and a contact hole 28a in which the opening of the protective layer 26 and the opening 28b are communicated is formed. . Thereby, the formed conductive film is conductively connected to the drain electrode 12d through the contact hole 28a. The conductive film is also conductively connected to the wiring part 62 through the contact hole.

  Subsequently, the conductive film is patterned using a photolithography method. In patterning, a strong acid solution such as aqua regia (mixed solution of hydrochloric acid and nitric acid) is used as an etching solution. Thereby, the conductive layer 23a is formed in the region of the pixels 2R and 2G. In the pixel 2B region, the pixel electrode 25a is formed on the second reflective layer 44, and the second reflective layer 44 and the pixel electrode 25a constitute the anode 24. In addition, an electrode part 64 is formed on the wiring part 62, and the terminal part 60 is configured by the wiring part 62 and the electrode part 64.

  In the next first reflective layer forming step S40 and pixel electrode forming step S32, as shown in FIG. 8A, the reflective film 42a to be the first reflective layer 42 is formed and the conductive to be the pixel electrode 23b is formed. The film 23c is continuously formed, and the reflective film 42a and the conductive film 23c are patterned together. First, a reflective film 42a made of APC is formed so as to cover the base 20, the conductive layer 23a, and the pixel electrode 25a by sputtering, for example. Subsequently, a conductive film 23c made of amorphous ITO is formed so as to cover the reflective film 42a by, for example, a sputtering method.

  Next, as shown in FIG. 8B, the reflective film 42a and the conductive film 23c are patterned together using a photolithography method. In patterning, a weak acid solution such as a mixed solution of phosphoric acid, nitric acid and acetic acid is used as an etching solution. As a result, the first reflective layer 42 and the pixel electrode 23b are formed in the region of the pixels 2R and 2G so as to overlap the conductive layer 23a in a plane, and the conductive layer 23a, the first reflective layer 42, and the pixel electrode 23b are formed. And the anode 24 is configured. In this step, since a weak acid solution is used as an etching solution, damage to the pixel electrode 25a previously formed in the pixel 2B can be suppressed.

  Note that the pixel electrode 23b made of amorphous ITO may be crystallized by later firing. Further, at the time of pattern processing, the reflective film 42a and the conductive film 23c may be left in a region overlapping the electrode portion 64 in a plane. In this way, the electrical resistance of the electrode part 64 can be reduced.

  In addition, after forming the first reflective layer 42 by patterning the reflective film 42a in the first reflective layer forming step S40, the conductive film 23c is formed on the first reflective layer 42 in the pixel electrode forming step S32. It is also possible to take a pattern processing method. However, when such a method is adopted, the first reflective layer 42 formed in the first reflective layer forming step S40 is again damaged by being exposed to a series of pattern processing processes in the pixel electrode forming step S32. There is a risk of receiving.

  Next, in the organic functional layer forming step S50, as shown in FIG. 9A, the organic functional layer 30 is formed in the region of each pixel 2 by being laminated on the anode 24. First, the partition wall 48 is formed on the base body 20. For example, a partition layer made of acrylic resin or the like is formed so as to cover the substrate 20 and the anode 24 by using a spin coating method. And the opening part 48a which divides the area | region of each pixel 2 is formed by the photolithographic method. Thereby, the partition wall 48 is formed, and the anode 24 is exposed in the opening 48a.

  Next, the hole transport layer 32, the light emitting layer 34, and the electron transport layer 36 are sequentially stacked in the opening 48a, for example, by vacuum deposition. Thereby, the organic functional layer 30 is formed in the opening 48a. In this step, the organic functional layer 30 that can emit light of any one of R, G, and B is formed in each of the pixels 2R, 2G, and 2B. Further, the layer thickness of the organic functional layer 30 is adjusted so that the resonance wavelength of the optical resonator in each of the pixels 2R, 2G, and 2B becomes a predetermined wavelength λ. For this reason, the layer thickness of the organic functional layer 30 to be formed is different in the pixels 2R, 2G, and 2B. The pixel 2G is thicker than the pixel 2B, and the pixel 2R is thicker than the pixel 2G. As a method of forming the hole transport layer 32, the light emitting layer 34, and the electron transport layer 36, a method of applying by an ink jet method, a spin coat method, or the like may be applied.

  Next, in the cathode formation step S60, as shown in FIG. 9B, the cathode 38 made of MgAg or the like is formed so as to cover the organic functional layer 30 and the partition wall 48 by, for example, a vacuum deposition method. Thereby, the organic EL element 8R is formed in the pixel 2R, the organic EL element 8G is formed in the pixel 2G, and the organic EL element 8B is formed in the pixel 2B.

  Next, in the sealing part forming step S70, as shown in FIG. 3, the sealing substrate 52 is disposed on the cathode 38 via the adhesive layer 54, and the sealing part 50 is formed. Thus, the organic EL device 100 is completed.

  According to the configuration and the manufacturing method of the organic EL device according to the first embodiment, the following effects can be obtained.

  (1) When the pixel electrode 23b is stacked on the first reflective layer 42 and disposed in the pixel 2B, the degree of decrease in the light reflectance R in the pixel 2B that emits B light is lower than that in the pixels 2R and 2G. large. In the organic EL device 100, since the pixel 2B is provided with the second reflective layer 44 made of AlCu or the like, a higher light reflectance R than that of the first reflective layer 42 in which the light reflectance is lowered can be obtained. For this reason, the difference between the light reflectance R in the pixel 2B and the light reflectance R in the pixels 2R and 2G can be reduced. Thereby, the brightness in the pixel 2B is improved, and an organic EL device in which the brightness is more uniform among the pixels 2R, 2G, and 2B can be provided.

  (2) Since the second reflective layer 44 is formed before the first reflective layer 42 is formed, the first reflective layer 42 is damaged by pattern processing or the like in the second reflective layer forming step S20. Can be avoided.

  (3) Since the conductive layer 23a is disposed between the first reflective layer 42 and the base body 20, the adhesion of the first reflective layer 42 to the base body 20 is improved. Thereby, it is suppressed that the 1st reflective layer 42 peels from the base | substrate 20 by pattern processing etc. FIG.

  (4) Since the pixel electrode 25a is formed on the second reflective layer 44 in the pixel electrode / conductive layer forming step S31 before the first reflective layer forming step S40, the surface of the second reflective layer 44 is a pixel. It is protected by the electrode 25a. Thereby, it is possible to prevent the second reflective layer 44 from being damaged by pattern processing or the like in the first reflective layer forming step S40 and the pixel electrode forming step S32.

(Second Embodiment)
<Organic EL device>
Next, the configuration of the organic EL device according to the second embodiment will be described with reference to the drawings. FIG. 10 is a cross-sectional view illustrating a schematic configuration of the organic EL device according to the second embodiment. FIG. 10 corresponds to a cross section taken along line AA ′ of FIG.

  The organic EL device 200 according to the second embodiment has a three-layer structure in which conductive layers are arranged above and below the first reflective layer in the pixels 2R and 2G with respect to the organic EL device 100 according to the first embodiment. However, the other structures are substantially the same, except that an insulating layer is disposed between the stacked structure and the anode. Constituent elements common to the first embodiment are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIG. 10, an organic EL device 200 according to the second embodiment includes a conductive layer 46a as a first conductive layer, a first reflective layer 42, and a second conductive layer on a base 20. As a conductive layer 46b, an insulating layer 40, a second reflective layer 44, an anode 24, a partition wall 48, an organic functional layer 30, a cathode 38, and a sealing portion 50.

  The conductive layer 46a and the conductive layer 46b are provided corresponding to the pixels 2R and 2G. The conductive layer 46 a is disposed between the base 20 and the first reflective layer 42 so as to overlap the first reflective layer 42 in a plane. In addition, the conductive layer 46 b is disposed on the first reflective layer 42 so as to overlap the first reflective layer 42 in a planar manner. That is, the organic EL device 200 has a stacked structure in which three layers of the conductive layer 46 a, the first reflective layer 42, and the conductive layer 46 b are stacked on the substrate 20.

  The conductive layer 46a and the conductive layer 46b are made of, for example, amorphous ITO. The conductive layer 46 a plays a role of improving the adhesion of the first reflective layer 42 to the base body 20. In addition, the conductive layer 46b serves to protect the surface of the first reflective layer 42.

The insulating layer 40 is formed so as to cover the laminated structure of the conductive layer 46 a, the first reflective layer 42, and the conductive layer 46 b provided corresponding to the pixels 2 R and 2 G and the surface of the base 20. The insulating layer 40 serves to protect the surface of the stacked structure of the conductive layer 46a, the first reflective layer 42, and the conductive layer 46b. The insulating layer 40 is made of, for example, SiN or SiO ₂ . The layer thickness of the insulating layer 40 is, for example, about 200 nm. The second reflective layer 44 is disposed on the insulating layer 40.

  In the pixels 2R and 2G, a pixel electrode 25a serving as a first electrode is provided on the insulating layer 40 so as to overlap the first reflective layer 42 in a planar manner. The pixel electrode 25a is made of, for example, polycrystalline ITO. The pixel electrode 25 a is conductively connected to the drain electrode 12 d through a contact hole 28 a that penetrates the insulating layer 40, the planarization layer 28, and the protective layer 26. The pixel electrode 25a functions as the anode 24.

  In the pixel 2 </ b> B, a pixel electrode 25 a as a first electrode is provided on the second reflective layer 44 so as to cover the second reflective layer 44. The second reflective layer 44 and the pixel electrode 25a constitute the anode 24. The pixel electrode 25a is made of, for example, polycrystalline ITO. The pixel electrode 25 a is conductively connected to the drain electrode 12 d through a contact hole 28 a that penetrates the insulating layer 40, the planarization layer 28, and the protective layer 26.

  The terminal portion 60 is provided with an electrode portion 64 on the insulating layer 40. The electrode portion 64 is conductively connected to the wiring portion 62 through a contact hole that penetrates the insulating layer 40, the planarization layer 28, and the protective layer 26.

  In the organic EL device 200 according to the second embodiment, similarly to the organic EL device 100 according to the first embodiment, silver or silver corresponding to the pixel 2R that emits R light and the pixel 2G that emits G light is used. A first reflective layer 42 made of silver-containing alloy is arranged, and a second reflective layer 44 made of aluminum or an alloy containing aluminum is arranged on the pixel 2B that emits B light. Therefore, similarly to the organic EL device 100 according to the first embodiment, the brightness in the pixel 2B is improved, and an organic EL device in which the brightness is more uniform between the pixels 2R, 2G, and 2B can be provided.

  Also in the organic EL device 200, similarly to the organic EL device 100, the organic functional layer 30 is provided between the first reflective layer 42 and the cathode 38 and between the second reflective layer 44 and the cathode 38. An optical resonator that resonates the emitted light is formed. However, in the organic EL device 200, the optical distance L is determined by the layer thickness of the conductive layer 46b, the insulating layer 40, the pixel electrode 25a, and the organic functional layer 30 in the pixels 2R and 2G, and the pixel electrode 25a in the pixel 2B. The optical distance L is determined by the layer thickness with the organic functional layer 30. Therefore, in the pixel 2B, the layer thickness of the organic functional layer 30 occupying the optical distance L of the optical resonator can be increased by the layer thickness of the conductive layer 46b and the insulating layer 40.

  In the pixel 2B that emits B light having the shortest wavelength among the pixels 2R, 2G, and 2B, since the optical distance L of the optical resonator is the shortest, the layer thickness of the organic functional layer 30 is the thinnest. Here, in the same manner as the pixels 2R and 2G, when the pixel 2B has a configuration in which a three-layer structure of the conductive layer 46a, the first reflective layer 42, and the conductive layer 46b is arranged, the second reflective layer 44 is used. Compared with the configuration in which is disposed, the layer thickness of the organic functional layer 30 occupying the optical distance L of the optical resonator is reduced by the thickness of the conductive layer 46 b and the insulating layer 40.

  If the layer thickness of the organic functional layer 30 is made thinner, there is a greater risk that a short circuit will occur between the anode 24 and the cathode 38 due to the inclusion of foreign matter into the organic functional layer 30 or variations in the layer thickness of the organic functional layer 30. . According to the configuration of the organic EL device 200, the layer thickness of the organic functional layer 30 can be increased by the thickness of the conductive layer 46b and the insulating layer 40 in the pixel 2B, so that a short circuit occurs between the anode 24 and the cathode 38. Risk can be reduced.

<Method for manufacturing organic EL device>
Next, a method for manufacturing an organic EL device according to the second embodiment will be described with reference to the drawings. FIG. 11 is a flowchart illustrating a method for manufacturing the organic EL device according to the second embodiment. 12 and 13 are diagrams for explaining a method of manufacturing the organic EL device according to the second embodiment.

  As shown in FIG. 11, the manufacturing method of the organic EL device includes a substrate preparation step S10, a conductive layer forming step S41, a first reflective layer forming step S40, a conductive layer forming step S42, and an insulating layer forming step S43. A second reflective layer forming step S20, a pixel electrode forming step S30, an organic functional layer forming step S50, a cathode forming step S60, and a sealing portion forming step S70. The steps common to the first embodiment are denoted by the same reference numerals and the description thereof is omitted.

  In the conductive layer forming step S41, the first reflective layer forming step S40, and the conductive layer forming step S42, the conductive film for forming the conductive layer 46a and the reflective film for forming the first reflective layer 42 are formed. The conductive film for forming the conductive layer 46b is continuously formed, and the conductive layer 46a, the first reflective layer 42, and the conductive layer 46b are patterned together. As a result, as shown in FIG. 12A, a three-layer stacked structure of the conductive layer 46a, the first reflective layer 42, and the conductive layer 46b is formed in the region of the pixels 2R and 2G. At the time of this pattern processing, the conductive layer 46a and the conductive layer 46b are located in the upper and lower layers of the first reflective layer 42. Therefore, the first reflective layer 42 is peeled off from the base 20 and the first reflective layer is formed. Damage to the surface of 42 can be suppressed.

  Next, in an insulating layer forming step S43, the insulating layer 40 is formed on the substrate 20 as shown in FIG. The insulating layer 40 is formed of SiN so as to cover the base 20 and the three-layer structure of the conductive layer 46a, the first reflective layer 42, and the conductive layer 46b by, for example, the CVD method. Since the insulating layer 40 is formed by the CVD method, it is formed with substantially the same film thickness on the upper surface and side surfaces of the three-layer laminated structure. Thereby, the side surface of the first reflective layer 42 disposed between the conductive layer 46 a and the conductive layer 46 b is protected by the insulating layer 40. In addition, the conductive layer 46 a and the conductive layer 46 b are also protected by the insulating layer 40.

  Next, in the second reflective layer formation step S20, as shown in FIG. 13A, the second reflective layer 44 is formed in the region of the pixel 2B on the insulating layer 40. At this time, the laminated structure of the three layers of the conductive layer 46a, the first reflective layer 42, and the conductive layer 46b is covered with the insulating layer 40, so that it is protected from damage due to pattern processing or the like in this step.

  Next, in the pixel electrode formation step S30, as shown in FIG. 13B, the pixel electrode 25a is formed in the regions of the pixels 2R, 2G, and 2B. First, the insulating layer 40 and the protective layer 26 in the opening 28b of the planarizing layer 28 are opened by, for example, dry etching, and a contact hole 28a is provided. At this time, the terminal portion 60 is similarly provided with an opening. Note that the step of providing the contact hole 28a in the insulating layer 40 and the protective layer 26 may be performed before the second reflective layer forming step S20.

  Next, a conductive film made of polycrystalline ITO is formed so as to cover the insulating layer 40, the second reflective layer 44, and the terminal portion 60 by, for example, sputtering. Subsequently, the conductive film is patterned using a photolithography method. Thereby, the pixel electrode 25a is formed on the insulating layer 40 in the region of the pixels 2R and 2G. The pixel electrode 25a functions as the anode 24. A pixel electrode 25a is formed on the second reflective layer 44 in the region of the pixel 2B. The second reflective layer 44 and the pixel electrode 25a constitute the anode 24. An electrode part 64 is formed on the terminal part 60.

  In the pixel electrode formation step S30, the three-layer structure of the conductive layer 46a, the first reflective layer 42, and the conductive layer 46b is covered with the insulating layer 40, so that it is protected from damage due to pattern processing or the like in this step. Is done. Thereby, it can suppress more effectively that the 1st reflective layer 42 is damaged.

(Third embodiment)
<Organic EL device>
Next, the configuration of the organic EL device according to the third embodiment will be described with reference to the drawings. FIG. 14 is a cross-sectional view illustrating a schematic configuration of an organic EL device according to the third embodiment. FIG. 14 corresponds to a cross section taken along line AA ′ of FIG.

  The organic EL device 300 according to the third embodiment is different from the organic EL device 200 according to the second embodiment in that pixel electrodes are stacked in the pixels 2R and 2G and a color filter is disposed. Are different, but the other configurations are almost the same. Constituent elements common to the second embodiment are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIG. 14, the organic EL device 300 according to the third embodiment has a conductive layer 46 a, a first reflective layer 42, a conductive layer 46 b, an insulating layer 40, and a second layer on the base 20. The reflective layer 44, the anode 24, the partition wall 48, the organic functional layer 30, the cathode 38, the color filters 56R, 56G, and 56B, and the sealing portion 50 are provided.

  In the pixel 2R, a first electrode layer 25c, a second electrode layer 25b, and a third electrode layer 25a are sequentially stacked on the insulating layer 40. The first electrode layer 25c, the second electrode layer 25b, and the third electrode layer 25a constitute a pixel electrode 25d. The pixel electrode 25d functions as the anode 24. The first electrode layer 25c is provided on the insulating layer 40 so as to overlap the first reflective layer 42 in a planar manner. The first electrode layer 25 c is conductively connected to the drain electrode 12 d through a contact hole 28 a that penetrates the insulating layer 40, the planarization layer 28, and the protective layer 26. The second electrode layer 25b is provided so as to cover the first electrode layer 25c. The third electrode layer 25a is provided so as to cover the second electrode layer 25b.

  In the pixel 2G, a second electrode layer 25b and a third electrode layer 25a are sequentially stacked on the insulating layer 40. The second electrode layer 25b and the third electrode layer 25a constitute a pixel electrode 25e. The pixel electrode 25e functions as the anode 24. The second electrode layer 25b is provided on the insulating layer 40 so as to overlap the first reflective layer 42 in a planar manner. The second electrode layer 25 b is conductively connected to the drain electrode 12 d through a contact hole 28 a that penetrates the insulating layer 40, the planarizing layer 28, and the protective layer 26. The third electrode layer 25a is provided so as to cover the second electrode layer 25b.

  In the pixel 2 </ b> B, the pixel electrode 25 a is provided on the insulating layer 40 so as to cover the second reflective layer 44. The second reflective layer 44 and the pixel electrode 25a constitute the anode 24. The pixel electrode 25 a is conductively connected to the drain electrode 12 d through a contact hole 28 a that penetrates the insulating layer 40, the planarization layer 28, and the protective layer 26. The pixel electrode 25a is formed in the same process as the third electrode layer 25a, and has the same layer thickness as the third electrode layer 25a.

  The layer thickness of the first electrode layer 25c, the layer thickness of the second electrode layer 25b, and the layer thickness of the third electrode layer 25a (pixel electrode 25a) may be different from each other. The first electrode layer 25c, the second electrode layer 25b, and the third electrode layer 25a (pixel electrode 25a) are made of, for example, amorphous ITO. Note that the third electrode layer 25a (pixel electrode 25a) may be formed of polycrystalline ITO.

  In the organic EL device 300, the pixel electrodes 2R, 2G, and 2B have different pixel electrode layer thicknesses. The pixel electrode 25e is thicker than the pixel electrode 25a by the layer thickness of the second electrode layer 25b, and the pixel electrode 25d is a pixel electrode. It is formed thicker than the electrode 25e by the thickness of the first electrode layer 25c.

  In the terminal portion 60, a first electrode layer 64c, a second electrode layer 64b, and a third electrode layer 64a are sequentially stacked on the insulating layer 40. The first electrode layer 64c, the second electrode layer 64b, and the third electrode layer 64a constitute an electrode portion 64. The first electrode layer 64c, the second electrode layer 64b, and the third electrode layer 64a have the same layer thickness as the first electrode layer 25c, the second electrode layer 25b, and the third electrode layer 25a, respectively. ing.

  The organic EL device 300 includes the organic functional layer 30 that emits light of the same color in the pixels 2R, 2G, and 2B. In the organic functional layer 30, for example, white light emission is obtained. Therefore, the organic EL device 300 includes the organic EL elements 8 that emit white light in the pixels 2R, 2G, and 2B. The organic functional layer 30 is formed with substantially the same layer thickness in the pixels 2R, 2G, and 2B.

  In the organic EL device 300, an optical resonator that resonates light emitted from the organic functional layer 30 is formed. Therefore, even if the organic functional layer 30 emits white light, R, G, and B 3 Two different lights can be emitted. In the organic EL device 300, since an optical resonator is formed, it can be said that a white light emitting material can be commonly used as the light emitting material of the organic functional layer 30.

  The color filters 56R, 56G, and 56B are provided on the organic EL element 8 side of the sealing substrate 52 so as to planarly overlap the organic EL elements 8 corresponding to the pixels 2R, 2G, and 2B. Of the light emitted from the organic EL element 8 and output from the optical resonator, three different lights of R, G, and B are transmitted through the color filters 56R, 56G, and 56B, respectively. Thereby, an organic EL device excellent in color reproducibility can be provided.

  A light shielding layer may be provided between the adjacent color filters 56R, 56G, and 56B. Further, a flattening layer may be provided that covers the surface of the color filters 56R, 56G, and 56B on the organic EL element 8 side and relaxes the unevenness of the surface.

  In the organic EL device 300 according to the third embodiment, similarly to the organic EL devices 100 and 200 according to the above embodiment, the first reflective layer 42 made of silver or an alloy containing silver corresponding to the pixels 2R and 2G. Is disposed, and the second reflective layer 44 made of aluminum or an alloy containing aluminum is disposed on the pixel 2B. Therefore, similarly to the organic EL devices 100 and 200, the brightness in the pixel 2B is improved, and an organic EL device in which the brightness is more uniform between the pixels 2R, 2G, and 2B can be provided.

  Also in the organic EL device 300, as in the organic EL devices 100 and 200, an optical resonator that resonates light emitted from the organic functional layer 30 is formed. However, in the organic EL device 300, the organic functional layer 30 is formed with substantially the same layer thickness in the pixels 2R, 2G, and 2B. In the organic EL device 300, in the pixels 2R, 2G, and 2B, the optical distance L is adjusted by the layer thickness of the pixel electrodes 25d, 25e, and 25a so that each resonance wavelength in the optical resonator becomes a predetermined wavelength λ. It has a configuration.

  In the pixel 2R, the optical thickness of the pixel electrode 25d, that is, the first electrode layer 25c, the second electrode layer 25b, the third electrode layer 25a, the conductive layer 46b, the insulating layer 40, and the organic functional layer 30 is optically determined. The distance L is determined. In the pixel 2G, the optical distance L is determined by the layer thickness of the pixel electrode 25e, that is, the second electrode layer 25b, the third electrode layer 25a, the conductive layer 46b, the insulating layer 40, and the organic functional layer 30. In the pixel 2B, the optical distance L is determined by the layer thickness between the pixel electrode 25a and the organic functional layer 30. Accordingly, the optical distance L of the optical resonator is adjusted by appropriately setting the layer thicknesses of the first electrode layer 25c, the second electrode layer 25b, and the third electrode layer 25a (pixel electrode 25a). The

  Here, in the organic EL device 300, the layer thickness of the organic functional layer 30 is substantially the same in the pixel 2B in which the optical distance L of the optical resonator is the smallest among the pixels 2R, 2G, and 2B. However, in comparison with the pixels 2R and 2G, in the pixel 2B, in addition to the thickness of the first electrode layer 25c and the second electrode layer 25b, the second reflective layer 44 is disposed to insulate the conductive layer 46b. It can be made thinner by the layer thickness with the layer 40. Thereby, the optical distance L of the optical resonator in the optical design can be easily adjusted.

<Method for manufacturing organic EL device>
Next, a method for manufacturing an organic EL device according to the third embodiment will be described with reference to the drawings. FIG. 15 is a flowchart illustrating a method for manufacturing an organic EL device according to the third embodiment. 16 and 17 are views for explaining a method of manufacturing the organic EL device according to the third embodiment.

  As shown in FIG. 15, the manufacturing method of the organic EL device includes a substrate preparation step S10, a conductive layer forming step S41, a first reflective layer forming step S40, a conductive layer forming step S42, and an insulating layer forming step S43. A second reflective layer forming step S20, a pixel electrode forming step S33, an organic functional layer forming step S51, a cathode forming step S60, a color filter forming step S80, and a sealing portion forming step S70. It is out. The steps common to the above embodiment are denoted by the same reference numerals and the description thereof is omitted.

  The pixel electrode formation step S33 includes a step of forming the first electrode layer 25c, a step of forming the second electrode layer 25b, and a step of forming the third electrode layer 25a. In the step of forming the first electrode layer 25c, as shown in FIG. 16A, the first electrode layer 25c is formed in the region of the pixel 2R. First, the protective layer 26 is opened to provide a contact hole 28a, and a conductive film made of amorphous ITO is formed so as to cover the insulating layer 40 and the second reflective layer 44 by sputtering, for example. Then, patterning of the conductive film is performed using a photolithography method, and the first electrode layer 25c is formed in the region of the pixel 2R. Further, the first electrode layer 64 c is formed on the wiring portion 62.

  Subsequently, in the step of forming the second electrode layer 25b, as shown in FIG. 16B, the second electrode layer 25b is formed in the regions of the pixels 2R and 2G. For example, a conductive film made of amorphous ITO is formed so as to cover the insulating layer 40, the first electrode layer 25c, and the second reflective layer 44 by sputtering, and the conductive film is formed by photolithography. Pattern processing is performed to form the second electrode layer 25b. In addition, the second electrode layer 64b is formed over the first electrode layer 64c.

  In the pixel 2R, it is preferable to form the second electrode layer 25b so as to cover the first electrode layer 25c located below. If the second electrode layer 25b is formed in this way, the first electrode layer 25c can be protected in the pattern processing in the step of forming the second electrode layer 25b. The same applies to the second electrode layer 64b.

  Subsequently, in the step of forming the third electrode layer 25a, as shown in FIG. 17A, the third electrode layer 25a is formed in the regions of the pixels 2R, 2G, and 2B. For example, a conductive film made of amorphous ITO is formed so as to cover the insulating layer 40, the second electrode layer 25b, and the second reflective layer 44 by sputtering, and the conductive film is formed by photolithography. Pattern processing is performed to form the third electrode layer 25a.

  In the pixels 2R and 2G, the third electrode layer 25a is preferably formed so as to cover the second electrode layer 25b located below. If the third electrode layer 25a is formed in this way, the second electrode layer 25b can be protected in the pattern processing in the step of forming the third electrode layer 25a. The same applies to the third electrode layer 64a.

  Thereby, the pixel electrode 25d (anode 24) is formed in the region of the pixel 2R, and the pixel electrode 25e (anode 24) is formed in the region of the pixel 2G. In the region of the pixel 2B, the pixel electrode 25a including the third electrode layer 25a is formed on the second reflective layer 44, and the anode 24 is configured by the second reflective layer 44 and the pixel electrode 25a. The third electrode layer 64a is formed on the second electrode layer 64b, and the first electrode layer 64c, the second electrode layer 64b, and the third electrode layer 64a constitute the electrode unit 64. .

  The third electrode layer 25a (pixel electrode 25a) and the third electrode layer 64a may be formed of polycrystalline ITO. In addition, the first electrode layer 25c, the second electrode layer 25b, the third electrode layer 25a (pixel electrode 25a), the first electrode layer 64c, the second electrode layer 64b, and the third electrode layer 64a are formed. You may make it polycrystallize by baking later.

  In the pixel electrode formation step S33, the layer thicknesses of the first electrode layer 25c, the second electrode layer 25b, and the third electrode layer 25a are determined by the resonance wavelength of the optical resonator in each of the pixels 2R, 2G, and 2B. It is formed in a predetermined layer thickness so as to have a predetermined wavelength λ.

  Here, the second reflective layer 44 is exposed to a series of processes of patterning twice in the step of forming the first electrode layer 25c and the step of forming the second electrode layer 25b. However, since the weak acid solution is used as the etching solution in the pattern processing in these steps, the second reflective layer 44 can be prevented from being damaged.

  Further, since the three-layered structure of the conductive layer 46a, the first reflective layer 42, and the conductive layer 46b is covered with the insulating layer 40, it is protected from damage due to the three times of pattern processing in the pixel electrode formation step S33. Is done. Thereby, it can suppress that the 1st reflective layer 42 is damaged.

  Next, in the organic functional layer forming step S51, as shown in FIG. 17B, the organic functional layer 30 capable of obtaining white light emission is formed in each of the pixels 2R, 2G, and 2B. The organic functional layer 30 is formed with substantially the same layer thickness in the pixels 2R, 2G, and 2B.

  Next, in the color filter forming step S80, as shown in FIG. 14, color filters 56R, 56G, and 56B are formed on the organic EL element 8 side of the sealing substrate 52. The color filters 56R, 56G, and 56B are formed, for example, by applying a photosensitive resin containing a pigment that transmits light of different colors of R, G, and B and performing pattern processing.

  A light shielding layer made of, for example, chromium (Cr) may be formed between the color filters 56R, 56G, and 56B adjacent to each other. Further, a flattening layer that covers the surface of the color filters 56R, 56G, and 56B on the organic EL element 8 side and relaxes the unevenness of the surface may be further formed.

<Electronic equipment>
The organic EL devices 100, 200, and 300 described above can be mounted and used in a mobile phone 500 as an electronic device, for example, as shown in FIG. The mobile phone 500 includes the organic EL devices 100, 200, and 300 in the display unit 502. With this configuration, the mobile phone 500 including the display portion 502 can obtain more uniform brightness between pixels.

  Further, the electronic device may be an electronic book, a personal computer, a digital still camera, a viewfinder type or a monitor direct-view type video tape recorder, an in-vehicle monitor of a car navigation device, and the like.

  As mentioned above, although embodiment of this invention was described, various deformation | transformation can be added with respect to the said embodiment in the range which does not deviate from the meaning of this invention. As modifications, for example, the following can be considered.

(Modification 1)
The organic EL device of the above embodiment is configured to emit light of three colors of R, G, and B from the pixel 2, but is not limited to the above form. The organic EL device may be configured to emit light of other colors such as white and cyan other than the three colors R, G, and B from the pixel 2. Even in such a configuration, the second reflection corresponding to the pixel 2 that emits light of a wavelength having a greater degree of decrease in the light reflectance than the light of other wavelengths as in the case of the B light. By disposing the layer 44, the brightness of the pixels 2 that emit light of this wavelength is improved, and an organic EL device having a more uniform brightness between the pixels 2 that emit light of different wavelengths can be provided.

(Modification 2)
The organic EL device of the above embodiment has a configuration including an optical resonator, but is not limited to the above embodiment. The organic EL device may be configured not to include an optical resonator. Even in such a configuration, by arranging the second reflective layer 44 corresponding to the pixel 2 that emits light having a wavelength whose light reflectivity is lower than that of light having other wavelengths, The brightness of the pixels 2 that emit light having a wavelength is improved, and an organic EL device having a more uniform brightness between the pixels 2 that emit light having different wavelengths can be provided.

(Modification 3)
In the organic EL device of the above embodiment, the pixels 2 have a substantially rectangular planar shape and are arranged in a matrix, but the present invention is not limited to the above form. The pixel 2 may have another planar shape such as a circle or an ellipse. The pixels 2 may be arranged in a staggered pattern or the like.

  2 ... Pixel, 20 ... Base, 23a, 46a ... Conductive layer as first conductive layer, 23b, 25a, 25d, 25e ... Pixel electrode as first electrode, 25a ... Third electrode layer, 25b ... First 2 electrode layer, 25c ... first electrode layer, 30 ... organic functional layer, 34 ... light emitting layer, 38 ... cathode as second electrode, 40 ... insulating layer, 42 ... first reflective layer, 44 ... first 2 reflective layers, 46b ... conductive layer as second conductive layer, 56R, 56G, 56B ... color filter, 100, 200, 300 ... organic EL device, 500 ... mobile phone as electronic equipment.

Claims (16)

A substrate;
Pixels that emit one of at least three different wavelengths of light arranged on the substrate;
A reflective layer having light reflectivity provided on the substrate corresponding to the pixel;
A first electrode having optical transparency disposed on the reflective layer;
An organic functional layer including at least a light emitting layer, disposed on the first electrode;
A second electrode having optical transparency disposed on the organic functional layer,
The reflective layer includes at least a first reflective layer made of a first metal material and a second reflective layer made of a second metal material having higher resistance to patterning than the first metal material. And
One of the first reflective layer and the second reflective layer is disposed in the pixel in accordance with the wavelength of the emitted light. The organic EL device according to claim 1,
The organic EL device, wherein the first metal material is made of silver or an alloy containing silver. The organic EL device according to claim 1, wherein
The organic EL device, wherein the second metal material is made of aluminum or an alloy containing aluminum. An organic EL device according to any one of claims 1 to 3,
A first conductive layer provided on the pixel on which the first reflective layer is disposed;
The first electroconductive layer is disposed on the opposite side of the first reflective layer to the first electrode so as to overlap the first reflective layer in a planar manner. apparatus. An organic EL device according to any one of claims 1 to 4,
A second conductive layer provided in the pixel on which the first reflective layer is disposed; and an insulating layer covering a surface of the second conductive layer;
The second conductive layer is disposed between the first reflective layer and the first electrode so as to planarly overlap the first reflective layer,
The organic EL device, wherein the insulating layer further covers side surfaces of the first conductive layer and the first reflective layer. An organic EL device according to any one of claims 1 to 5,
The three different wavelengths are a wavelength corresponding to red light, a wavelength corresponding to green light, and a wavelength corresponding to blue light,
The first reflective layer is disposed corresponding to the pixel emitting the red light and the pixel emitting the green light,
2. The organic EL device according to claim 1, wherein the second reflective layer is disposed corresponding to the pixel emitting the blue light. The organic EL device according to claim 6,
The second electrode further has light reflectivity,
An optical resonator for resonating light from the organic functional layer is formed between the first reflective layer and the second electrode, and between the second reflective layer and the second electrode. An organic EL device characterized by comprising: The organic EL device according to claim 7,
The layer thickness of the first electrode in the pixel that emits green light is larger than the layer thickness of the first electrode in the pixel that emits blue light,
The organic EL device according to claim 1, wherein a layer thickness of the first electrode in the pixel that emits red light is larger than a layer thickness of the first electrode in the pixel that emits green light. The organic EL device according to claim 7 or 8,
A color filter corresponding to the red light, a color filter corresponding to the green light, and a color filter corresponding to the blue light, which are disposed on the light emitting side of the pixel; A characteristic organic EL device.   An electronic apparatus comprising the organic EL device according to claim 1. Pixels emitting light of at least three different wavelengths arranged on a substrate;
A first reflective layer and a second reflective layer having light reflectivity;
A first electrode having optical transparency;
A second electrode having light reflectivity and light transparency;
An organic functional layer including at least a light emitting layer sandwiched between the first electrode and the second electrode,
One of the first reflective layer made of silver or an alloy containing silver and the second reflective layer made of aluminum or an alloy containing aluminum according to the wavelength of the light emitted from the pixel Forming an organic EL device. It is a manufacturing method of the organic EL device according to claim 11,
The three different wavelengths are a wavelength corresponding to red light, a wavelength corresponding to green light, and a wavelength corresponding to blue light,
Forming the first reflective layer corresponding to the pixel emitting the red light and the pixel emitting the green light;
The method of manufacturing an organic EL device, wherein the second reflective layer is formed corresponding to the pixel emitting the blue light. It is a manufacturing method of the organic EL device according to claim 12,
Forming the second reflective layer on the substrate in correspondence with the pixels emitting the blue light;
Forming the first electrode on the second reflective layer, and forming the first conductive layer corresponding to the pixel emitting the red light and the pixel emitting the green light on the substrate; And a process of
Forming the first reflective layer on the first conductive layer;
Forming the first electrode on the first reflective layer so as to planarly overlap the first reflective layer;
Forming the organic functional layer on the first electrode;
Forming the second electrode on the organic functional layer;
A method for producing an organic EL device, comprising: It is a manufacturing method of the organic EL device according to claim 12,
Forming a first conductive layer on the substrate corresponding to the pixel emitting the red light and the pixel emitting the green light;
Forming the first reflective layer on the first conductive layer so as to planarly overlap the first conductive layer;
Forming a second conductive layer on the first reflective layer so as to planarly overlap the first reflective layer;
Forming an insulating layer so as to cover the surface of the base body and the second conductive layer and the side surfaces of the first conductive layer and the first reflective layer;
Forming the second reflective layer on the insulating layer corresponding to the pixels emitting the blue light;
Forming the first electrode on a region overlapping the first reflective layer on the insulating layer in a plane and on the second reflective layer;
Forming the organic functional layer on the first electrode;
Forming the second electrode on the organic functional layer;
A method for producing an organic EL device, comprising: It is a manufacturing method of the organic EL device according to claim 14,
The step of forming the first electrode includes:
Forming a first electrode layer on the insulating layer so as to planarly overlap the first reflective layer, corresponding to the pixel emitting the red light;
Corresponding to the pixel emitting the green light on the insulating layer, the first reflective layer is planarly overlapped with the first reflective layer, and the first electrode layer is planarly disposed on the first electrode layer. Forming a second electrode layer so as to overlap
Corresponding to the pixel emitting the blue light on the insulating layer, it overlaps with the second reflective layer in a plane, and on the second electrode layer in a plane with the second electrode layer And a step of forming a third electrode layer so as to overlap the substrate. A method for manufacturing an organic EL device, comprising: It is a manufacturing method of the organic EL device according to any one of claims 13 to 15,
After the step of forming the second electrode, a color filter corresponding to the red light, a color filter corresponding to the green light, and a color corresponding to the blue light are provided on the light emission side of the pixel. A method for manufacturing an organic EL device, further comprising a step of arranging a filter.

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