JP2010050014A - Light-emitting device and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To raise the intensity of target color for each pixel at high color purity without complicating manufacturing processes. <P>SOLUTION: The color pixel 1 includes a sub-pixel 2r for emitting red light R, a sub-pixel 2g for emitting green light G, a sub-pixel 2b for emitting blue light B, and a sub-pixel 2w for emitting white light W. The sub-pixel 2w for white color is divided into a first zone 3r for emitting the red light R, a second zone 3g for emitting the green light G, and a third zone 3b for emitting the blue light B. A resonator structure for resonating light emitted from a light-emitting layer between a light reflecting layer and a semi-transmission reflecting layer is formed on each of the sub-pixels 2r, 2g, and 2b and each of the first-third zones 3r, 3g, and 3b of the sub-pixel 2w. The first zone 3r of the sub-pixel 2w has the resonator structure equal to that of the sub-pixel 2r, the second zone 3g of the sub-pixel 2w has the resonator structure equal to that of the sub-pixel 2g, and the third zone 3b of the sub-pixel 2w has the resonator structure equal to that of the sub-pixel 2b. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a light emitting device and an electronic apparatus.

For example, in Patent Document 1, an organic light emitting layer is disposed between a first electrode that also serves as a reflective layer and a semitransparent reflective layer, and light generated in the organic light emitting layer is reflected on the first electrode (reflective layer) and translucently reflected. A resonator structure for resonating with a layer is disclosed. If this resonator structure is used, by adjusting the optical distance between the first electrode (reflective layer) and the translucent reflective layer, the spectrum light has a narrow peak width and high intensity, such as R light, G light, and B light. Can be used for display.
International Publication No. 01/039554 Pamphlet

By the way, in order to improve white luminance, in addition to RGB sub-pixels, W (white) sub-pixels may be provided. However, since white light has a plurality of spectral peaks, if a specific wavelength is increased by the resonator structure, for example, red light or blue light is generated. If the resonance wavelength is set to ultraviolet or infrared, white light can be prevented from being reddish or bluish, but in this case, the extraction efficiency of white light is reduced. In addition, since the resonance wavelength must be set to ultraviolet or infrared, the number of film forming steps and photolithography steps increases.
On the other hand, it is conceivable to adopt a configuration in which only the W sub-pixel does not employ the resonator structure. For this purpose, it is necessary to eliminate the semitransparent reflective film only in the W sub-pixel portion. In this case, patterning of the translucent reflective film is necessary. In addition, when the translucent reflective film also serves as an electrode, an alternative transparent electrode must be created.

  Further, in addition to the W sub-pixel, for example, a Y (yellow) sub-pixel may be provided in addition to the RGB sub-pixels in order to improve the yellow luminance. In such a case, if an attempt is made to extract Y light having a narrow spectrum peak width and high intensity from the Y sub-pixel using the resonator structure, the optical distance is determined so that the peak wavelength of the Y light becomes the resonance wavelength. There is a need. That is, it is necessary to newly form a resonator structure for Y different from the case of R, G, and B.

The present invention has been made in view of the above-described problems, and a light-emitting device capable of increasing the luminance of a target color in each pixel with high color purity without complicating the manufacturing process, and the same It is an object to provide a used electronic device.
In addition, the present invention provides a light emitting device capable of increasing the color purity and extraction efficiency of white light emitted from a white sub-pixel without complicating the manufacturing process, and an electronic apparatus using the light emitting device The task is to do.

  In order to solve the above-described problems, a light-emitting device according to the present invention includes a plurality of first sub-pixels that respectively emit different colors of first emitted light, and first emitted light having a color different from any of the first sub-pixels. The second sub-pixel has two or more individual areas each emitting a second emitted light of a different color, and the second sub-pixel emits the second sub-pixel from each of the individual areas. The two outgoing lights have the same color as the first outgoing light from any of the first sub-pixels, and the second outgoing lights from each of the individual regions are combined to generate the second outgoing light from the second sub-pixels. The first emitted light from each of the first sub-pixels and the first emitted light from the second sub-pixels are combined to become the emitted light from the pixels. Each of the first sub-pixels and each of the individual regions includes a light reflecting layer, a half A hyperreflective layer and a light emitting layer interposed between the light reflective layer and the semi-transmissive reflective layer are formed, and light emitted from the light-emitting layer is transmitted to the light reflective layer and the semi-transmissive reflective layer. Each of the individual regions includes the first sub-pixel that emits the first emitted light of the same color as the second emitted light from the individual region, and The resonator structure is the same.

According to this configuration, each of the individual regions included in the second subpixel has the same resonator structure as the first subpixel that emits the first emitted light having the same color as the second emitted light from the individual region. . Note that the resonator structures are the same, specifically, the thickness of each of the plurality of layers from the light reflecting layer to the semi-transmissive reflecting layer and the material forming each of the plurality of layers. Means the same. Therefore, each individual region of the second subpixel can be manufactured by the same manufacturing process as any of the first subpixels. Further, from each individual region of the second sub-pixel, outgoing light (second outgoing light) having a narrow spectrum peak width and an increased intensity is obtained by the resonator structure. Accordingly, the light (first outgoing light) that is finally emitted from the second sub-pixel when these lights are combined also has high color purity and high extraction efficiency. Further, the light finally emitted from the second sub-pixel is adjusted by adjusting the area ratio of each individual region in the second sub-pixel or by providing the second sub-pixel with an individual region from which the emitted light of which color is obtained. The color of can be changed.
Therefore, the luminance of the target color in each pixel can be increased with high color purity without complicating the manufacturing process.

  In the light emitting device described above, the light reflecting layer may also serve as an electrode such as a pixel electrode or a common electrode. The same applies to the transflective layer. The light emitting layer may be composed of a plurality of layers such as a hole transport / injection layer, a light emitting layer, and an electron transport / injection layer, or may be composed of a plurality of layers having different emission colors. Further, a pixel electrode, a common electrode, an insulating layer, or the like formed of a light-transmitting material such as a transparent material may be included between the light reflecting layer and the semi-transmissive reflecting layer. One pixel only needs to have at least two first sub-pixels having different colors of emitted light. The second sub-pixel only needs to have at least two individual regions. The light emitting device may include a plurality of pixels each having a plurality of first subpixels and second subpixels.

Further, in the light emitting device described above, each of the individual regions includes the first sub-pixel that emits the first emitted light having the same color as the second emitted light from the individual region, and the light reflecting layer. The thickness of each of the plurality of layers up to the transflective layer and the material forming each of the plurality of layers may be the same.
In addition, the plurality of layers between the light reflection layer and the semi-transmission reflection layer are pixels formed of a light-transmitting material such as a transparent material in addition to the light reflection layer, the light-emitting layer, and the semi-transmission reflection layer. An electrode, a common electrode, an insulating layer, and the like may be included.

In the light emitting device described above, the second subpixel includes a first electrode formed continuously over all the individual regions of the second subpixel, and the first electrode with the light emitting layer interposed therebetween. May comprise a second electrode disposed on the opposite side. In this case, by applying electric energy between the first electrode and the second electrode, it is possible to simultaneously control all the individual regions included in the second subpixel.
Further, the first electrode is formed of a light-transmitting conductive material, and is disposed between the light reflecting layer and the semi-transmissive reflecting layer, and between the individual regions having different colors of the second emitted light. The structure from which thickness differs may be sufficient.

  In the above-described light emitting device, the light emitting device may further include a light shielding layer that is disposed on the opposite side of the light emitting layer with the transflective layer interposed therebetween and shields a boundary portion between the individual regions. When the resonator structure is different, a step is generated in one or more layers interposed between the light reflecting layer and the semi-transmissive reflecting layer at the boundary between the individual regions. By shielding this stepped portion, variations in luminance and color purity can be suppressed for the light emitted from the second sub-pixel.

  Further, the light emitting device according to the present invention includes a first sub-pixel that emits red emitted light, a second sub-pixel that emits green emitted light, a third sub-pixel that emits blue emitted light, and white A fourth sub-pixel that emits the emitted light, and the fourth sub-pixel includes a first region from which the red emitted light is emitted, a second region from which the green emitted light is emitted, A third region from which the blue emitted light is emitted, and the emitted light from each of the first to third regions is combined into white emitted light from the fourth sub-pixel, and The light emitted from each of the first to third sub-pixels and the white light emitted from the fourth sub-pixel are combined to become light emitted from the pixels, and each of the first to third sub-pixels In each of the first to third regions in the fourth sub-pixel, a light reflection layer and a semi-transmissive reflection And a light emitting layer interposed between the light reflecting layer and the semi-transmissive reflective layer, and light emitted from the light emitting layer between the light reflective layer and the semi-transmissive reflective layer. A resonator structure to be resonated is formed, the resonator structure of the first region is the same as the resonator structure of the first subpixel, and the resonator structure of the second region is the second substructure. The resonator structure of the pixel is the same, and the resonator structure of the third region is the same as the resonator structure of the third sub-pixel.

According to this configuration, the first region of the fourth subpixel has the same resonator structure as the first subpixel, the second region of the fourth subpixel has the same resonator structure as the second subpixel, The third region of the fourth subpixel has the same resonator structure as the third subpixel. Note that the resonator structures are the same, specifically, the thickness of each of the plurality of layers from the light reflecting layer to the semi-transmissive reflecting layer and the material forming each of the plurality of layers. Means the same.
Therefore, the first region of the fourth subpixel can be manufactured by the same manufacturing process as the first subpixel, the second region of the fourth subpixel can be manufactured by the same manufacturing process as the second subpixel, The third region of the fourth subpixel can be manufactured by the same manufacturing process as that of the third subpixel. In addition, from the first to third regions of the fourth subpixel, red light, green light, and blue light having a narrow spectrum peak width and high intensity are emitted by the resonator structure. Therefore, the white light finally emitted from the fourth sub-pixel when these lights are combined also has high color purity and high extraction efficiency.
Therefore, the color purity and extraction efficiency of white light emitted from the white subpixel can be increased without complicating the manufacturing process.

  In this light emitting device, the light reflecting layer may also serve as an electrode such as a pixel electrode or a common electrode. The same applies to the transflective layer. The light emitting layer may be composed of a plurality of layers such as a hole transport / injection layer, a light emitting layer, and an electron transport / injection layer, or may be composed of a plurality of layers having different emission colors. Further, a pixel electrode, a common electrode, an insulating layer, or the like formed of a light-transmitting material such as a transparent material may be included between the light reflecting layer and the semi-transmissive reflecting layer. One pixel only needs to include at least first to fourth subpixels, and may further include, for example, a fifth subpixel in which the color of the emitted light is yellow or purple. Further, the fourth subpixel only needs to have first to third regions. For example, the fourth subpixel may have two first regions, two second regions, and one third region. Good. In addition, the light emitting device may include a plurality of pixels having first to fourth subpixels.

In the light emitting device described above, in each of the first region and the first subpixel, the thickness of each of the plurality of layers from the light reflection layer to the semi-transmissive reflection layer, and the plurality of layers The material forming each is the same, and in each of the second region and the second subpixel, the thickness of each of the plurality of layers between the light reflecting layer and the semi-transmissive reflecting layer, and the plurality of the plurality of layers The material forming each of the layers is the same, and the thickness of each of the plurality of layers between the light reflecting layer and the semi-transmissive reflecting layer in the third region and the third subpixel, and The structure which the material which forms each of several layers is the same may be sufficient.
In addition, the plurality of layers between the light reflecting layer and the semi-transmissive reflecting layer are formed of a light-transmitting material such as a transparent material in addition to the light reflecting layer, the light emitting layer, and the semi-transmissive reflecting layer. An electrode, a common electrode, an insulating layer, and the like may be included.

In the light emitting device described above, the fourth sub-pixel is disposed on the opposite side of the first electrode with the light emitting layer sandwiched between the first electrode formed continuously over the first to third regions. The structure provided with the made 2nd electrode may be sufficient. In this case, by applying electric energy between the first electrode and the second electrode, the first to third regions included in the fourth sub-pixel can be controlled simultaneously.
The first electrode is formed of a light-transmitting conductive material, and is disposed between the light reflecting layer and the semi-transmissive reflecting layer, and includes the first region, the second region, and the third region. The thickness may be different.

  In the light emitting device described above, the area ratio of the first region, the second region, and the third region is set so that the color of the light emitted from the fourth sub-pixel is white. May be. In particular, as described above, when the first electrode of the fourth subpixel is formed continuously over the first to third regions, the emitted light (red light, green light, Since the brightness of blue light cannot be adjusted individually, it is important to determine the area ratio of the first to third regions so that white light is emitted from the fourth sub-pixel.

In the light emitting device described above, each of the first to third sub-pixels and each of the first to third regions of the fourth sub-pixel may include the light reflecting layer and the transflective layer. A light transmissive electrode interposed therebetween is further formed, and the electrode in the third region and the electrode of the third sub-pixel are formed of a single layer of the same material, and are formed in the second region. The electrode of the second subpixel and the electrode of the second subpixel are formed by stacking the same material in two layers, and the electrode in the first region and the electrode of the first subpixel are formed of the same material. The structure formed by laminating may be sufficient.
In this case, all the electrodes provided in the first to fourth subpixels can be manufactured by the same manufacturing process. Further, by changing the thickness of the electrode, the optical distance between the light reflecting layer and the semi-transmissive reflecting layer can be changed.

  In the light emitting device described above, the light shielding layer is disposed on the opposite side of the light emitting layer with the transflective layer interposed therebetween, and shields the boundary portion between the first region, the second region, and the third region. May be provided. Since the resonator structure is different at the boundary portion between the regions, a step is generated in one or more layers interposed between the light reflecting layer and the semi-transmissive reflecting layer. By shielding this stepped portion, variations in luminance and color purity of white light emitted from the fourth subpixel can be suppressed.

  In addition, the light emitting device according to the present invention is used in various electronic devices. Typical examples of this electronic device are devices that use a light emitting device as a display device, such as a personal computer, a mobile phone, and a digital signage (electronic signage / electronic poster). However, the use of the light emitting device according to the present invention is not limited to image display. For example, a recording material (for example, a photosensitive film sheet) is also used for a printer that prints image data supplied from the outside, such as image data captured by a mobile phone with a camera function or a digital still camera, in a manner similar to an instant photograph. The light-emitting device according to the present invention can be used as an exposure apparatus for exposing the light. The light emitting device according to the present invention can also be used as a lighting device (backlight) installed on the back surface of the liquid crystal panel.

Embodiments according to the present invention will be described below with reference to the accompanying drawings. In the drawings, the ratio of dimensions of each part is different from the actual one.
<A. Embodiment>
FIG. 1 is a plan view showing the configuration of the color pixel 1.
The light emitting device in the present embodiment is a full-color organic EL (Electro Luminescent) display, and a plurality of color pixels 1 are arranged in a matrix in the display area. As shown in FIG. 1, one color pixel 1 includes four sub-pixels 2 (2r, 2g, 2b, 2w) having different colors of emitted light. The sub-pixel 2r emits red light (R), the sub-pixel 2g emits green light (G), the sub-pixel 2b emits blue light (B), and the sub-pixel 2w emits white light (W). To do.

  The white sub-pixel 2w has three regions 3 (3r, 3g, 3b). Red light (R) is emitted from the first region 3r, green light (G) is emitted from the second region 3g, and blue light (B) is emitted from the third region 3b. Thus, red light, green light, and blue light are emitted from the sub-pixel 2w, and these lights are combined and visually recognized as white light by the observer. In FIG. 1, the area ratio of the first region 3r, the second region 3g, and the third region 3b is 1: 1: 1. However, the color of the emitted light from the sub-pixel 2w is actually white. Thus, the area ratio of the three regions 3 is determined.

FIG. 2 is a plan view showing the configuration of the color filter 30.
In the figure, only a part of the color filter 30 (a part corresponding to one color pixel 1) is shown. The color filter 30 includes a red transmissive region 31r, a green transmissive region 31g, a blue transmissive region 31b, a non-colored region 31w, and a light shielding portion 32 surrounding each of these regions. The red transmission region 31r is disposed at a position corresponding to the sub-pixel 2r and transmits a large amount of red light (R). The green transmission region 31g is disposed at a position corresponding to the sub-pixel 2g and transmits a large amount of green light (G). The blue transmissive region 31b is disposed at a position corresponding to the sub-pixel 2b and transmits a large amount of blue light (B). The non-colored region 31w is a colorless and transparent light transmission layer, and is disposed at a position corresponding to the sub-pixel 2w. The light shielding part 32 is a black matrix.

3 is a cross-sectional view taken along line AA ′ shown in FIG. 4 is a cross-sectional view taken along line BB ′ shown in FIG.
As shown in FIGS. 3 and 4, the light emitting device in the present embodiment is a top emission type. Therefore, as the substrate 10, in addition to a light-transmitting plate material such as glass, an opaque plate material such as a ceramic or metal sheet can be used. Although not shown, a plurality of thin film transistors and various wirings (for example, data lines and scanning lines) are formed on the substrate 10. The surface of the substrate 10 on which these thin film transistors and wirings are formed is covered with a base layer 12. The underlayer 12 is a film body formed of various insulating materials such as a resin material such as acrylic or epoxy, or an inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx).

  A plurality of light reflecting layers 14 are formed on the surface of the base layer 12. These light reflection layers 14 are formed in a stripe shape, for example, along the arrangement of the sub-pixels 2. Each light reflecting layer 14 is formed of a material having light reflectivity. Examples of this type of material include simple metals such as aluminum and silver, and alloys based on these metals. Each light reflecting layer 14 reflects light reaching from the light emitting body 20 side upward in the figure. Further, the surface and side end surfaces (edge portions) of each light reflecting layer 14 are covered with an insulating layer 16. Each insulating layer 16 is a film body formed of an insulating material having optical transparency. Examples of such materials include resin materials such as acrylic and epoxy materials, and inorganic materials such as silicon oxide and silicon nitride.

  Transparent electrodes 18 (18r, 18g, 18b, 18w) are formed on the surface of the insulating layer 16 so as to be separated from each other for each sub-pixel 2. Each of these transparent electrodes 18 is formed of a transparent conductive material such as ITO (indium tin oxide), ZnO (zinc oxide), or IZO (indium zinc oxide). Each transparent electrode 18 is a pixel electrode provided for each sub-pixel 2 and functions as an anode of the light emitter 20. As shown in FIG. 3, the transparent electrode 18r has a uniform film thickness dr, the transparent electrode 18g has a uniform film thickness dg, and the transparent electrode 18b has a uniform film thickness db. Thus, the transparent electrode 18r, the transparent electrode 18g, and the transparent electrode 18b have different film thicknesses. Further, as shown in FIG. 4, the transparent electrode 18w is one electrode formed continuously over the first region 3r, the second region 3g, and the third region 3b. The film thickness differs between the region 3g and the third region 3b.

  Each transparent electrode 18 is connected to a data line through a thin film transistor. A data line driving circuit (not shown) generates a data signal for each sub-pixel 2. The data signal generated by the data line driving circuit is supplied to the corresponding transparent electrode 18 through the data line. Therefore, in the white sub-pixel 2w, the intensity of the red light emitted from the first area 3r, the intensity of the green light emitted from the second area 3g, and the intensity of the blue light emitted from the third area 3b are individually set. It is not commonly controlled, but is commonly controlled based on the same data signal. For this reason, it is necessary to determine the area ratio of the first region 3r, the second region 3g, and the third region 3b so that the color of light emitted from the sub-pixel 2w is white.

  Further, as shown in FIGS. 3 and 4, each layer (hole transport / injection layer 20a, light-emitting layer 20b, and electron transport / injection layer 20c) constituting the light emitter 20 is continuously distributed over the entire surface of the display region. It is the composition to do. The hole transport / injection layer 20a has, for example, a two-layer structure and includes a hole injection layer and a hole transport layer. The hole injection layer can be formed of a hole injection material such as CuPc (copper phthalocyanine). The hole transport layer can be formed of a hole transport material such as NPD (N, N′-Bis (1-naphthyl) -N, N′-diphenyl-4,4-biphenyl). The hole transport / injection layer 20a may be a single layer that functions as both a hole transport layer and a hole injection layer.

  The electron transport / injection layer 20c has, for example, a two-layer structure and includes an electron transport layer and an electron injection layer. The electron transport layer can be formed of an electron transport material such as Alq3 (tris 8-quinolinolato aluminum complex). The electron injection layer can be formed of an electron injection material such as LiF (lithium fluoride). The electron transport / injection layer 20c may be a single layer that functions as both an electron transport layer and an electron injection layer.

  The light emitting layer 20b is formed of an organic EL material and emits white light by the combination of holes and electrons. Although the light emitting layer 20b may be a single layer, it is often difficult to manufacture a light emitting layer that emits light having a strong energy over a wide wavelength band. For example, a light emitting material that emits blue light and an orange light A plurality of light-emitting layers may be combined to form a light-emitting material that emits light.

  Note that the structure of the light emitter 20 is not limited to the example described above. For example, the hole injection layer may be omitted from the hole transport / injection layer 20a, and the electron injection layer may be omitted from the electron transport / injection layer 20c. Further, the hole transport / injection layer 20a and the electron transport / injection layer 20c may be omitted. Thus, the light emitter 20 only needs to include at least the light emitting layer 20b.

A translucent semi-reflective electrode 22 is formed on the entire surface of the display region on the surface of the electron transport / injection layer 20c. The translucent semi-reflective electrode 22 is a conductive film body that faces each transparent electrode 18 with the light emitter 20 interposed therebetween. The translucent transflective electrode 32 is a common electrode provided in common for all the subpixels 2 and functions as a cathode of the light emitter 20.
Further, the semi-transparent semi-reflective electrode 22 functions as a semi-transmissive reflective layer that transmits a part of the light reaching from the substrate 10 toward the upper side of the figure and reflects the remainder toward the lower side of the figure. Such a semi-transparent semi-reflective electrode 22 is produced, for example, by forming a conductive material having light reflectivity sufficiently thin. Examples of this type of material include simple metals such as aluminum and silver, and alloys mainly composed of these materials. For example, the semi-transparent semi-reflective electrode 22 has a structure in which magnesium and silver film bodies, which are formed sufficiently thin, are laminated on each other. However, the translucent semi-reflective electrode 22 may be formed of a light-transmitting conductive material such as ITO or IZO. Thus, even when the translucent transflective electrode 22 is made of a light-transmitting material, a sealing material that covers the surface of the translucent transflective electrode 22 with a material having a lower refractive index than the translucent transflective electrode 22 If (not shown) is formed, a part of the light is transmitted and the rest is reflected at the interface between the translucent transflective electrode 22 and the sealing material, so that it can function as a transflective layer.

  As described above, the light emitting layer 20b emits white light, but the subpixel 2r emits red light (R ′), the subpixel 2g emits green light (G ′) by a resonator structure described later, The sub-pixel 2b emits blue light (B ′) (FIG. 3). Similarly, in the sub-pixel 2w, the portion of the first region 3r emits red light (R ′), the portion of the second region 3g emits green light (G ′), and the portion of the third region 3b Blue light (B ′) is emitted (FIG. 4).

The red light (R ′) emitted from the sub-pixel 2 r is transmitted through the red transmission region 31 r of the color filter 30 to improve the color purity, and the green light (G ′) emitted from the sub-pixel 2 g is used as the color filter. The color purity is increased by passing through the 30 green transmission regions 31g, and the blue light (B ′) emitted from the sub-pixel 2b is transmitted through the blue transmission region 31b of the color filter 30 and the color purity is increased. On the other hand, the red light (R ′), green light (G ′), and blue light (B ′) emitted from the white sub-pixel 2w pass through the non-colored region 31w of the color filter 30 and thus have almost no extraction efficiency. It does not decline. Further, these lights (R ′, G ′, B ′) are combined into white light (W).
As a result, the color of the light finally emitted from the color pixel 1 is the red light (R) from the sub-pixel 2r, the green light (G) from the sub-pixel 2g, and the blue light (from the sub-pixel 2b). B) and the white light (W) from the sub-pixel 2w are combined.

Next, the resonator structure (microcavity) will be described.
In each of the sub-pixels 2r, 2g, and 2b and each of the first to third regions 3r, 3g, and 3b in the sub-pixel 2w, the light reflected from the light-emitting layer 20b is reflected on the light-reflecting layer 14 and the semitransparent semi-reflective electrode 22 A resonator structure that resonates with each other is formed. The resonator structure includes a light reflecting layer 14, an insulating layer 16, a transparent electrode 18, a light emitter 20, and a translucent semi-reflective electrode 22. The light emitted from the light emitting layer 20b reciprocates between the light reflecting layer 14 and the semitransparent semireflective electrode 22, and only the resonance wavelength component in the resonator structure is selectively amplified by multiple interference, and then translucent. The light passes through the semi-reflective electrode 22 and is emitted to the observation side.

The resonance wavelength λ in the resonator structure is determined according to the optical distance L between the light reflecting layer 14 and the semitransparent semi-reflective electrode 22 as shown in the following formula (1), for example. However, “Φ (rad)” in the equation (1) is a phase shift generated at both ends of the resonator structure, and more specifically, the phase shift “Φ1 when reflected on the surface of the light reflecting layer 14”. (Rad) ”and the phase shift“ Φ2 (rad) ”when reflected by the surface of the semitransparent semi-reflective electrode 22 (= Φ1 + Φ2). “M” is an integer that makes the optical distance L positive.
(2L) / λ + Φ / (2π) = m (1)

  For example, if the peak wavelength of red light is substituted into equation (1) as the resonance wavelength λ, the optical distance Lr for resonating red light is determined. Similarly, if the peak wavelength of green light is substituted into equation (1) as the resonance wavelength λ, the optical distance Lg for resonating green light is determined. Also, if the peak wavelength of blue light is substituted into the equation (1) as the resonance wavelength λ, the optical distance Lb for resonating the blue light is determined.

  Therefore, in the portion of the first region 3r of the sub-pixel 2r and the sub-pixel 2w in which the color of the emitted light is red, the optical distance Lr can be obtained between the light reflecting layer 14 and the semitransparent semi-reflective electrode 22. The thickness and material of each intervening layer are determined. Similarly, in the portion of the second region 3g of the sub-pixel 2g and the sub-pixel 2w in which the color of the emitted light is green, the optical distance Lg is obtained between the light reflecting layer 14 and the translucent semi-reflective electrode 22. The thickness and material of each layer intervening are determined. Further, in the portion of the third region 3b of the sub-pixel 2b and the sub-pixel 2w in which the color of the emitted light is blue, the optical distance Lb is obtained between the light reflecting layer 14 and the translucent semi-reflective electrode 22. The thickness and material of each intervening layer are determined.

  As shown in FIGS. 3 and 4, the insulating layer 16 and the transparent electrodes 18 (18r, 18g, 18b, 18w) are arranged between the light reflecting layer 14 and the semitransparent semireflective electrode 22 in order from the bottom of the figure. ), A total of five layers including a hole transport / injection layer 20a, a light emitting layer 20b, and an electron transport / injection layer 20c are interposed. In this embodiment, the optical distance L is adjusted by adjusting the film thickness of the transparent electrode 18. Different colors (R, G, B) of the emitted light are used. Accordingly, in the transparent electrode 18w, the film thickness of the first region 3r is the same as the film thickness of the transparent electrode 18r (dr), and the film thickness of the second region 3g is the same as the film thickness of the transparent electrode 18g. (Dg), the thickness of the third region 3b is the same as the thickness of the transparent electrode 18b (db).

  The remaining four layers excluding the transparent electrode 18 have the same film thickness in all the subpixels 2. That is, the thickness of the insulating layer 16 is d1 in all the subpixels 2, the thickness of the hole transport / injection layer 20a is d2 in all the subpixels 2, and the thickness of the light emitting layer 20b is all the subpixels. It is d3 in the pixel 2, and the film thickness of the electron transport / injection layer 20c is d4 in all the subpixels 2.

  The material forming each layer interposed between the light reflecting layer 14 and the translucent semi-reflective electrode 22 is the same in all the sub-pixels 2. That is, the material for forming the insulating layer 16, the material for forming the transparent electrode 18, the material for forming the hole transport / injection layer 20a, the material for forming the light emitting layer 20b, and the electron transport / injection layer 20c are formed. The material to be used is common to all the sub-pixels 2. In addition, the thickness and material of the light reflecting layer 14, the semi-transparent semi-reflecting electrode 22, and the base layer 12 are common to all the subpixels 2.

  Further, as apparent from the equation (1), the optical distance L is proportional to the resonance wavelength λ. The longest peak wavelength (resonance wavelength λ) is red light, the next longest is green light, and the shortest is blue light. Therefore, as shown in FIGS. 3 and 4, the optical distance L is Lr> Lg> Lb. The film thickness of each transparent electrode 18 is dr> dg> db. That is, the thickest film is in the transparent electrode 18r and the first region 3r of the transparent electrode 18w, and the thickest film is in the transparent electrode 18g and the second region 3g of the transparent electrode 18w. The thin film thickness is a portion of the third region 3b of the transparent electrode 18b and the transparent electrode 18w.

Each transparent electrode 18 is formed as follows.
First, the transparent electrode 18r, the transparent electrode 18g, and the transparent electrode 18b will be described with reference to FIG. 3. First, a first conductive film having a thickness of db is formed, and then the transparent electrode 18r and the transparent electrode 18g are formed. A second conductive film having a thickness dg-db is stacked, and finally a third conductive film having a thickness dr-dg is stacked only on the transparent electrode 18r. This is the same for the transparent electrode 18w shown in FIG. 4. First, a first conductive film having a thickness of db is formed over the first region 3r to the third region 3b, and then the first region 3r and the second region 3g. The second conductive film having the thickness dg-db is laminated only on the portion, and finally the third conductive film having the thickness dr-dg is laminated only on the portion of the first region 3r. Accordingly, the first region 3r of the transparent electrode 18r and the transparent electrode 18w has a three-layer structure in which the first to third conductive films are stacked. The portion of the second region 3g of the transparent electrode 18g and the transparent electrode 18w has a two-layer structure in which the first and second conductive films are stacked. The portions of the transparent electrode 18b and the third region 3b of the transparent electrode 18w have a single-layer structure including only the first conductive film.
Thus, when forming each transparent electrode 18, all the transparent electrodes 18 can be formed simultaneously with the same film-forming process. Therefore, the film forming process of the transparent electrode 18 can be simplified.

As described above, according to this embodiment, the portion of the first region 3r (red) in the white subpixel 2w has the same resonator structure as that of the subpixel 2r (red), and the film thickness of each layer And all the materials are the same. Therefore, the first region 3r of the sub-pixel 2w can be manufactured simultaneously with the sub-pixel 2r by the same manufacturing process as the sub-pixel 2r. Similarly, the portion of the second region 3g (green) in the white subpixel 2w has the same resonator structure as that of the subpixel 2g (green), and the thickness and material of each layer are all the same. Accordingly, the second region 3g of the sub-pixel 2w can be manufactured simultaneously with the sub-pixel 2g by the same manufacturing process as that of the sub-pixel 2g. In the white subpixel 2w, the portion of the third region 3b (blue) has the same resonator structure as the subpixel 2b (blue), and the thickness and material of each layer are all the same. Therefore, the third region 3b of the sub-pixel 2w can be manufactured simultaneously with the sub-pixel 2b by the same manufacturing process as that of the sub-pixel 2b. That is, the first to third regions 3r, 3g, and 3b included in the white sub-pixel 2w can be manufactured by the same manufacturing process as any of the sub-pixels 2r, 2g, and 2b.
The first to third regions 3r, 3g, and 3b included in the white sub-pixel 2w emit red light, green light, and blue light whose spectrum peak width is narrow and intensity is increased by the resonator structure. The Therefore, the color purity and extraction efficiency of the white light that is finally combined and emitted from the sub-pixel 2w is high.
Therefore, the white sub-pixel 2w can emit whiter and brighter without complicating the manufacturing process. Note that, in the case of the RGBW four-color sub-pixel configuration, lower power consumption is obtained with the same white display luminance and a brighter white display luminance is obtained with the same power consumption than in the case of the RGBW four-color subpixel configuration. .

<B. Modification>
The present invention is not limited to the above-described embodiment, and for example, the following modifications are possible. Also, two or more of the following modifications can be combined as appropriate.
[1] In the above-described embodiment, the optical distance L is made different by adjusting the film thickness of the transparent electrode 18 (18r, 18g, 18b, 18w), but this is the method for controlling the optical distance L. It is not limited to. For example, as shown in FIGS. 5 and 6, the transparent electrodes 18r ′, 18g ′, 18b ′, and 18w ′ are all made to have the same film thickness d5, and the film thickness of the hole transport / injection layer 20a ′ is adjusted. The distance L ′ may be different. Further, the optical distance L may be varied by adjusting the film thickness of the light emitting layer 20b, the electron transport / injection layer 20c, or the insulating layer 16. Furthermore, the optical distance L may be made different by adjusting the film thicknesses of two or more layers interposed between the light reflecting layer 14 and the semitransparent semi-reflective electrode 22.

[2] Although a plurality of color pixels 1 are arranged in a matrix in the display area as shown in FIG. 7A, the color pixels 1 and the color pixels 40 are alternately arranged as shown in FIG. 7B. It is good also as a structure to arrange. Here, in the color pixel 40, the arrangement of the first region 3r (R), the second region 3g (G), and the third region 3b (B) in the white sub-pixel 2w _R is the same as the sub-pixel 2w of the color pixel 1. Is upside down. Further, the arrangement pattern of the color pixels is not limited to a matrix. For example, the color pixels may be arranged in a black (or white) arrangement pattern in a checkered pattern (chess pattern).

[3] As in the color filter 30 ′ shown in FIG. 8, for the white sub-pixel 2w, the boundary between the first region 3r and the second region 3g, or the boundary between the second region 3g and the third region 3b It is good also as a structure covered with light-shielding part 32 '. As is apparent from FIG. 4, these boundary portions are portions where steps are generated in each layer (transparent electrode 18 w, hole transport / injection layer 20 a, light emitting layer 20 b, electron transport / injection layer 20 c). . By covering this portion with the light shielding portion 32 ′, it is possible to suppress the light reflected by the stepped portion or having passed through the stepped portion from being emitted to the outside through the non-colored region 31w ′. That is, variations in luminance and color purity of white light emitted from the sub-pixel 2w can be suppressed.
Note that the color filters 30 and 30 ′ are not necessarily essential, but the color reproducibility can be improved by installing the color filters 30 and 30 ′. Further, since external light is absorbed by the color filters 30 and 30 ', there is an advantage that reflection of external light is reduced.

[4] In the above-described embodiment, the semi-transparent semi-reflective electrode 22 serving as the common electrode and the semi-transmissive reflective layer is exemplified. However, the common electrode and the transflective layer may be formed separately. In this case, the common electrode is formed of a transparent conductive material, and is disposed, for example, between the transflective layer and the electron transport / injection layer 20c or above the transflective layer (observation side).
In the above-described embodiment, instead of each transparent electrode 18, a pixel electrode formed of a conductive material having light reflectivity may be used. In this case, the upper surface of each pixel electrode is a light reflecting surface. That is, since each pixel electrode also serves as a light reflection layer, the light reflection layer 14 is unnecessary. In this case, the resonator structure is composed of each pixel electrode, the light emitter 20 and the semitransparent semi-reflective electrode 22. Therefore, the insulating layer 16 is not included in the resonator structure.
In the above-described embodiment, the transparent electrode 18w may be configured by three transparent electrodes formed individually for each of the first region 3r, the second region 3g, and the third region 3b. In this case, the three transparent electrodes constituting the transparent electrode 18w are connected to the same thin film transistor and supplied with a common data signal.

[5] In the above-described embodiment, the elements constituting the sub-pixel 2 (2r, 2g, 2b, 2w) are formed continuously over the entire surface of the display area, or formed separately from each other for each sub-pixel 2. This can be changed as appropriate. For example, the light reflecting layer 14 and the insulating layer 16 may be formed continuously over the entire surface of the display region. Further, the semi-transparent semi-reflective electrodes 22 may be formed so as to be separated from each other for each sub-pixel 2.
In the above-described embodiments, the top emission type light emitting device has been described. However, the present invention can also be applied to a bottom emission type light emitting device. In the case of the bottom emission type, the light reflecting layer may be disposed at a position farther from the substrate than the semi-transmissive reflective layer, and the light emitting layer may be disposed between the light reflective layer and the semi-transmissive reflective layer. In addition, the substrate and the base layer may be formed of a transparent material, and the color filters 30 and 30 ′ may be disposed on the side opposite to the light emitting layer with the transflective layer interposed therebetween.

[6] In the above-described embodiment, the light emitting layer 20b made of an organic EL material is exemplified. However, for example, a light emitting layer made of an inorganic EL material may be used. A light emitting diode may be used as the light emitter. Further, in the above-described embodiment, the case where light having a target wavelength is extracted from the white light emitted from the light emitting layer by the resonator structure is illustrated. However, the light emitting layer that emits red light is the first of the subpixels 2r and 2w. A configuration in which a light emitting layer that emits green light is provided in the second region 3g of the sub-pixel 2g and the sub-pixel 2w, and a light-emitting layer that emits blue light is provided in the third region 3b of the sub-pixel 2b and the sub-pixel 2w. It is good. Even in this case, light having a narrow spectrum peak width and high intensity can be extracted from the light emitting layer by using the resonator structure.

[7] For example, as shown in FIGS. 9A and 9B, the arrangement and shape of the sub-pixels 2r, 2g, 2b, and 2w in one color pixel can be appropriately changed. Further, as shown in FIG. 9C, one color pixel may have an M (purple) sub-pixel 2m in addition to the RGBW sub-pixels 2r, 2g, 2b, and 2w. As described above, the present invention is not limited to the RGBW four-color sub-pixel configuration.
Further, as shown in FIGS. 10A and 10B, the white sub-pixel 2w is divided into 6 or 5 individual regions in which one of RGB is the color of the emitted light. Also good. Of course, a resonator structure is formed for each of these individual regions. Further, the area ratio of each individual region is determined so that the color of the emitted light from the sub-pixel 2w is white.

[8] For example, as shown in FIG. 11, the color pixel 50 includes a Y (yellow) sub-pixel 2y in addition to the R sub-pixel 2r, the G sub-pixel 2g, and the B sub-pixel 2b. Also good. In this case, the yellow luminance can be improved. Note that the sub-pixels 2r, 2g, and 2b shown in the figure have the same configuration as the sub-pixels 2r, 2g, and 2b described in the above-described embodiment.
The sub-pixel 2y that emits yellow light (Y) is divided into a first region 4r and a second region 4g. Red light (R) is emitted from the first region 4r, and green light (G) is emitted from the second region 4g. That is, red light and green light are emitted from the sub-pixel 2y, and these lights are combined and visually recognized as yellow light. Note that the first region 4r of the sub-pixel 2y has the same configuration as the first region 3r of the sub-pixel 2w described in the above-described embodiment. The second region 4g of the sub pixel 2y has the same configuration as the second region 3g of the sub pixel 2w described in the above-described embodiment. In FIG. 11, the area ratio of the first region 4r and the second region 4g is 1: 1, but actually, the first region 4r and the first region 4r are arranged so that the color of the emitted light from the sub-pixel 2y is yellow. The area ratio of the second region 4g is determined.

  According to this configuration, the portion of the first region 4r (red) in the yellow sub-pixel 2y has the same resonator structure as the sub-pixel 2r (red), and the thickness and material of each layer are all the same. Become. Further, the second region 4g (green) portion of the yellow sub-pixel 2y has the same resonator structure as the sub-pixel 2g (green), and the thickness and material of each layer are all the same. Therefore, the first region 4r of the sub-pixel 2y can be manufactured by the same manufacturing process as the sub-pixel 2r, and the second region 4g of the sub-pixel 2y can be manufactured by the same manufacturing process as the sub-pixel 2g. In addition, the first region 4r and the second region 4g included in the yellow sub-pixel 2y emit red light and green light whose spectrum peak width is narrow and intensity is increased by the resonator structure. Therefore, the color purity and extraction efficiency of the yellow light that is finally combined and emitted from the sub-pixel 2y is high. Therefore, the color purity and extraction efficiency of yellow light emitted from the sub-pixel 2y can be increased without complicating the manufacturing process.

Similarly to this, in order to improve the brightness of magenta, for example, in addition to the RGB sub-pixels 2r, 2g, and 2b, a first region that emits red light (R) and blue light (B) are emitted. What is necessary is just to set it as the structure provided with the sub pixel of M (magenta) divided into the 2nd area | region. In addition, in order to improve the luminance of cyan, in addition to the RGB sub-pixels 2r, 2g, and 2b, a first region that emits green light (G) and a second region that emits blue light (B) are divided. It may be configured to include the C (cyan) sub-pixels.
Thus, the present invention is not limited to the configuration having W (white) sub-pixels.

For example, as illustrated in FIG. 12, the color pixel 60 may include a Y (yellow) sub-pixel 2y in addition to the R sub-pixel 2r and the G sub-pixel 2r. In other words, the B pixel sub-pixel 2b is removed from the color pixel 50 shown in FIG. The sub-pixels 2r and 2g illustrated in FIG. 12 have the same configuration as the sub-pixels 2r and 2g described in the above-described embodiment. The configuration of the sub-pixel 2y that emits yellow light (Y) is the same as that shown in FIG. Therefore, the first region 4r of the sub-pixel 2y can be manufactured by the same manufacturing process as the sub-pixel 2r, and the second region 4g of the sub-pixel 2y can be manufactured by the same manufacturing process as the sub-pixel 2g. In this configuration, full-color display is not possible because there is no B sub-pixel 2b, but yellow brightness can be increased with high color purity without complicating the manufacturing process.
Thus, the present invention is not limited to the full color type.

In the above-described embodiment, the case where white luminance is improved has been described. However, if the area ratio of the first region 3r, the second region 3g, and the third region 3b in the sub-pixel 2w is adjusted, the color whose luminance is desired to be improved. Can be set to other than white.
As will be apparent from the above description, a subpixel having a plurality of individual regions is provided, and the area ratio of each individual region in this subpixel is adjusted, or an individual region from which any color of emitted light is obtained is used as a subpixel. Depending on the provision, the color of light finally emitted from the sub-pixel (that is, the color whose luminance is desired to be improved) can be set to an arbitrary color.

<C. Electronic equipment>
Next, an electronic apparatus to which the light emitting device according to the embodiment and the modification described above is applied will be described.
FIG. 13 illustrates a configuration of a mobile personal computer to which the light-emitting device is applied. The personal computer 2000 includes a light emitting device 100 as a display unit and a main body 2010. The main body 2010 is provided with a power switch 2001 and a keyboard 2002.
FIG. 14 illustrates a configuration of a mobile phone to which the light-emitting device is applied. The cellular phone 3000 includes a light emitting device 100 as a display unit, a plurality of operation buttons 3001, and a scroll button 3002. By operating the scroll button 3002, the screen displayed on the light emitting device 100 is scrolled.
FIG. 15 shows a configuration of a portable information terminal (PDA: Personal Digital Assistants) to which the light emitting device is applied. The portable information terminal 4000 includes a light emitting device 100 as a display unit, a plurality of operation buttons 4001, and a power switch 4002. By operating the operation button 4001, various kinds of information such as an address book and a schedule book are displayed on the light emitting device 100.

  Note that electronic devices to which the light emitting device 100 is applied include televisions, digital still cameras, video cameras, car navigation devices, electronic paper, electronic notebooks, calculators, videophones, POSs, in addition to those shown in FIGS. Examples include terminals, printers, scanners, copiers, video players, digital signage (electronic signage / electronic posters), and the like. The light-emitting device according to the present invention can also be applied to a segment type display. Further, the use of the light emitting device according to the present invention is not limited to the display of images. For example, a recording material (for example, a photosensitive film sheet) is also used in a printer that prints image data supplied from the outside, such as image data captured by a mobile phone with a camera function or a digital still camera, in a manner similar to an instant photograph. The light-emitting device of the present invention can be used as an exposure apparatus for exposing the light. In addition, the light emitting device of the present invention can be used as a backlight of a liquid crystal panel.

It is a top view which shows the structure of a color pixel. It is a top view which shows the structure of a color filter. It is sectional drawing seen from the A-A 'line | wire shown in FIG. It is sectional drawing seen from the B-B 'line | wire shown in FIG. It is sectional drawing which shows the modification of a resonator structure. It is sectional drawing which shows the modification of a resonator structure. It is a top view which shows the arrangement | sequence of a color pixel. It is a top view which shows the structure (modification) of a color filter. It is a top view which shows the arrangement | sequence of a sub pixel. It is a top view which shows the modification of the sub pixel for white. It is a top view which shows the structure (modification example) of a color pixel. It is a top view which shows the structure (modification example) of a color pixel. It is a perspective view which shows the specific form of an electronic device. It is a perspective view which shows the specific form of an electronic device. It is a perspective view which shows the specific form of an electronic device.

Explanation of symbols

  1 ... color pixel, 2r ... sub-pixel (red), 2g ... sub-pixel (green), 2b ... sub-pixel (blue), 2w ... sub-pixel (white), 3r ... first region (red), 3g ... second Region (green), 3b ... Third region (blue), 10 ... Substrate, 12 ... Underlayer, 14 ... Light reflecting layer, 16 ... Insulating layer, 18r, 18g, 18b, 18w ... Transparent electrode, 20 ... Luminescent body, 20a ... hole transport / injection layer, 20b ... light emitting layer, 20c ... electron transport / injection layer, 22 ... translucent semi-reflective electrode (semi-transmissive reflective layer), 30 ... color filter (light-shielding layer), 31r ... red transmissive region , 31g: green transmission region, 31b: blue transmission region, 31w: non-colored region, 32: light shielding part, Lr, Lg, Lb ... optical distance.

Claims (13)

A plurality of first sub-pixels each emitting a first emitted light of a different color;
A second sub-pixel that emits first emitted light of a different color from any of the first sub-pixels,
The second sub-pixel has two or more individual regions each emitting second emitted light of different colors,
The second emitted light from each of the individual regions has the same color as the first emitted light from any of the first sub-pixels,
The second emitted light from each of the individual regions is combined to become the first emitted light from the second subpixel, and the first emitted light from each of the first subpixels, The first emitted light from the two sub-pixels is combined into the emitted light from the pixel,
In each of the first sub-pixels and each of the individual regions,
A light reflection layer, a transflective layer, and a light emitting layer interposed between the light reflective layer and the transflective layer are formed, and light emitted from the light emitting layer is transmitted to the light reflective layer. A resonator structure that resonates with the transflective layer is formed,
Each of the individual regions has the same resonator structure as the first sub-pixel that emits the first emitted light having the same color as the second emitted light from the individual region. . Each of the individual regions includes a first sub-pixel that emits the first emitted light having the same color as the second emitted light from the individual region, and a region between the light reflecting layer and the transflective layer. The light emitting device according to claim 1, wherein a thickness of each of the plurality of layers and a material forming each of the plurality of layers are the same. The second sub-pixel is
A first electrode formed continuously over all the individual regions of the second subpixel;
The light-emitting device according to claim 1, further comprising: a second electrode disposed on a side opposite to the first electrode with the light-emitting layer interposed therebetween. The first electrode is
Formed of a light-transmitting conductive material,
Disposed between the light reflecting layer and the transflective layer;
The light emitting device according to claim 3, wherein the individual regions having different colors of the second emitted light have different thicknesses. 5. The light emitting device according to claim 1, further comprising: a light shielding layer that is disposed on a side opposite to the light emitting layer with the transflective layer interposed therebetween and shields a boundary portion between the individual regions. The light emitting device according to 1. A first sub-pixel that emits red emitted light;
A second sub-pixel that emits green outgoing light;
A third sub-pixel that emits blue emitted light;
A pixel having a fourth sub-pixel that emits white light;
The fourth sub-pixel has a first region from which red emitted light is emitted, a second region from which green emitted light is emitted, and a third region from which blue emitted light is emitted,
The emitted light from each of the first to third regions is combined into white emitted light from the fourth subpixel, and the emitted light from each of the first to third subpixels, The white light emitted from the four sub-pixels is combined into the light emitted from the pixel,
Each of the first to third sub-pixels and each of the first to third regions of the fourth sub-pixel include
A light reflection layer, a transflective layer, and a light emitting layer interposed between the light reflective layer and the transflective layer are formed, and light emitted from the light emitting layer is transmitted to the light reflective layer. A resonator structure that resonates with the transflective layer is formed,
The resonator structure of the first region is the same as the resonator structure of the first sub-pixel;
The resonator structure of the second region is the same as the resonator structure of the second sub-pixel;
The light emitting device according to claim 3, wherein the resonator structure of the third region is the same as the resonator structure of the third sub-pixel. The thickness of each of the plurality of layers between the light reflecting layer and the semi-transmissive reflecting layer and the material forming each of the plurality of layers are the same in the first region and the first subpixel. Yes,
The thickness of each of the plurality of layers between the light reflecting layer and the semi-transmissive reflecting layer and the material forming each of the plurality of layers are the same in the second region and the second subpixel. Yes,
In the third region and the third sub-pixel, the thickness of each of the plurality of layers between the light reflecting layer and the semi-transmissive reflecting layer and the material forming each of the plurality of layers are the same. The light emitting device according to claim 6. The fourth sub-pixel includes
A first electrode formed continuously over the first to third regions;
The light-emitting device according to claim 6, further comprising: a second electrode disposed on a side opposite to the first electrode with the light-emitting layer interposed therebetween. The first electrode is
Formed of a light-transmitting conductive material,
Disposed between the light reflecting layer and the transflective layer;
The light emitting device according to claim 8, wherein the first region, the second region, and the third region have different thicknesses. The area ratio of the first region, the second region, and the third region is set so that the color of the light emitted from the fourth sub-pixel is white. The light-emitting device of any one of them. Each of the first to third sub-pixels and each of the first to third regions of the fourth sub-pixel include
A light transmissive electrode interposed between the light reflecting layer and the transflective layer is further formed;
The electrode in the third region and the electrode of the third subpixel are formed of a single layer of the same material,
The electrode in the second region and the electrode of the second subpixel are formed by laminating two layers of the same material,
The light emitting device according to claim 6, wherein the electrode in the first region and the electrode of the first subpixel are formed by stacking three layers of the same material. A light-shielding layer that is disposed on the opposite side of the light-emitting layer with the transflective layer interposed therebetween and shields light from a boundary portion between the first region, the second region, and the third region; The light emitting device according to any one of claims 6 to 11. The electronic device provided with the light-emitting device of any one of Claims 1 thru | or 12.

Images