KR20100075970A - Process and apparatus for producing ultrapure water, and method and apparatus for cleaning electronic component members - Google Patents

Abstract

This invention provides an apparatus for producing ultrapure water, which can stably produce ultrapure water having a boron concentration of not more than 1 ng/L or a metal concentration of not more than 0.1 ng/L, a process for producing ultrapure water using the apparatus, a method for cleaning electronic component members, and an apparatus for cleaning electronic component members. The apparatus for producing ultrapure water comprises a mixed bed deionization apparatus (16), provided with an anion exchange resin and a cation exchange resin, as a lattermost deionization apparatus. The anion exchange resin is an anion exchange resin having a boron content of not more than 50 μg/L-anion exchange resin (wet state) or an anion exchange resin having a cation elution amount of 100 μg/L-anion exchange resin (wet state).

Description

Ultrapure water production method and manufacturing apparatus, and cleaning method and cleaning apparatus for electronic component parts {PROCESS AND APPARATUS FOR PRODUCING ULTRAPURE WATER, AND METHOD AND APPARATUS FOR CLEANING ELECTRONIC COMPONENT MEMBERS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultrapure water production method and a production apparatus, and more particularly, to an ultrapure water production method and a production apparatus suitable for cleaning electronic component members in the semiconductor manufacturing industry and the like. Moreover, this invention relates to the washing | cleaning method and washing | cleaning apparatus of electronic component members using the ultrapure water manufactured by such an ultrapure water manufacturing apparatus.

BACKGROUND ART In the fields of semiconductor, chemical manufacturing, and the like, where ultrapure water is widely used, high quality water is increasingly required in recent years. Impurities in water (ultra pure water) and chemical liquids for cleaning semiconductor substrates and various electronic materials affect the electrical characteristics of silicon substrates such as semiconductors, and are thus strictly managed.

Ultrapure water is generally treated with treated water such as river water, groundwater and industrial water in a pretreatment process to remove most of the suspended matter and organic matter in the treated water. Subsequently, the pretreated water is a primary pure water production apparatus and a secondary It is manufactured by sequentially processing in a system pure water manufacturing apparatus (sometimes called a sub system). In the secondary pure water producing apparatus, ultraviolet ray irradiation, ion exchange, ultrafiltration membranes, and the like can be further combined and treated to remove trace amounts of ions, organic matter, and fine particles remaining in the primary pure water, and finally, desired ultrapure water can be obtained. . In such ultrapure water production apparatuses, non-regenerated ion exchange resins are used in mixed bed apparatuses of primary pure water production and ion exchange apparatuses of secondary pure water production. The advantages of using non-regenerated ion exchange resins are that the treated water is of high purity and does not require a regeneration facility with chemical liquids. This is because, in the secondary pure water production apparatus, in order to prevent the regeneration chemical liquid from flowing into the point of use, it is possible to use an ion exchange resin purified and refined by special conditioning.

The obtained ultrapure water is supplied to the use point which performs wafer cleaning etc. in the semiconductor manufacturing industry, for example. Such ultrapure water does not contain impurities at all and is present in an extremely small amount, and affects products such as semiconductor devices. As the degree of integration of devices increases, ultratrace components included in ultrapure water cannot be ignored, and ultrapure water having a higher purity than conventional ultrapure water is required.

Conventionally, as ultrapure water quality (metal impurity concentration), although the required specification is 1 ng / L or less, higher purity, ie, metal impurity concentration of 0.1 ng / L or less, is required.

Japanese Patent Application Laid-Open No. 8-84986 describes the production of ultrapure water having a boron concentration of 1 ng / L or less by using a boron selective ion exchange resin. However, when the mixture of the boron selective ion exchange resin or the mixture of the ion exchange resin and the mixed phase ion exchange resin is used, boron from the anion exchange resin used in the mixed phase ion exchange resin is used. By elution, the boron concentration in ultrapure water rises.

Patent Document 1: Japanese Patent Publication No. 2005-296839

Japanese Patent Laid-Open Publication No. 2005-296839 discloses a method for treating treated water from ion exchange resin by setting the fraction of sodium compound (R-Na) in the cation resin of the non-regenerated ion exchange resin used in the secondary pure water device to 0.01% or less. Ultrapure water production methods and apparatuses for suppressing outflowing sodium ions at very low levels, cleaning methods and cleaning apparatuses for electronic component members using the same have been proposed.

Patent Document 2: Japanese Patent Laid-Open No. 2005-296839

In an actual ultrapure water system, a mixed bed deionizer in which an anion exchange resin and a cation exchange resin are mixed is used for the final stage. Ultra-pure water quality is greatly affected by metal elution from anion exchange resin of this mixed bed deionizer, and is treated stably to 0.1 ng / L or less metal concentration simply by controlling metal concentration in cation exchange resin. It is difficult to do.

It is a first object of the present invention to provide an ultrapure water production system capable of stably producing ultrapure water having a boron concentration of 1 ng / L or less, an ultrapure water production method using the same, a cleaning method for electronic component members, and a cleaning device. .

The present invention also provides an ultrapure water production system capable of stably producing ultrapure water having a metal concentration of 0.1 ng / L or less, an ultrapure water production method using the same, a cleaning method for electronic component members, and a cleaning device. It is done.

The ultrapure water producing system of the first aspect is an ultrapure water producing system equipped with a deionization device having an anion exchange resin, wherein the anion exchange resin is used as the anion exchange resin, in which an anion exchange resin is obtained by analyzing and evaluating boron content in advance. It is characterized by.

The ultrapure water producing apparatus of the second aspect is the first aspect, wherein the specified value is 50 µg / L-anion exchange resin (wet state).

In the ultrapure water producing apparatus of the third aspect, in the first or second aspect, the deionization apparatus is a mixed phase deionization apparatus having the anion exchange resin and the cation exchange resin, and is provided as the last deionization apparatus. It is characterized by.

The ultrapure water production method of the fourth aspect is characterized by using a deionization device using an anion exchange resin that has been analyzed and evaluated for boron elution amount in advance and confirmed to be less than or equal to a prescribed value.

The ultrapure water production method of the fifth aspect uses the ultrapure water production apparatus according to any one of the first to third aspects.

The ultrapure water production method of the sixth aspect is, in the fourth or fifth aspect, wherein the anion exchange resin is used as the anion exchange resin, in which an anion exchange resin having a boron content of less than or equal to the specified value is produced by regeneration with an alkali agent having a boron concentration of 10 µg / L or less. It is characterized by.

The ultrapure water production method of the seventh aspect is characterized in that, in the sixth aspect, an anion exchange resin washed with water having a boron concentration of 2 µg / L or less after regeneration with the alkali agent is used as the anion exchange resin.

The cleaning method of the electronic component members of an 8th aspect wash | cleans electronic component members using the ultrapure water manufactured by the ultrapure water manufacturing apparatus in any one of 1st-3rd aspect. It is characterized by the above-mentioned.

The washing | cleaning apparatus of the electronic component members of a ninth aspect was equipped with the ultrapure water manufacturing apparatus in any one of the 1st-3rd aspect as a washing | cleaning water manufacturing apparatus. It is characterized by the above-mentioned.

In the first to ninth embodiments, the amount of boron eluted from the anion exchange resin is remarkably small, and as a result, it becomes possible to stably produce ultrapure water having a boron concentration of 1 ng / L or less.

As the prescribed value, 50 µg / L-anion exchange resin (wet state), particularly 10 µg / L-anion exchange resin (wet state) is suitable.

In addition, by providing the mixed phase deionization device having the anion exchange resin as the last deionization device in the ultrapure water production device, ultrapure water having a boron concentration well below 1 ng / L can be stably produced.

The ultrapure water production apparatus of the tenth aspect is an ultrapure water production apparatus in which a deionization device using an anion exchange resin is provided as the last deionization device, wherein the cation elution amount is analyzed and evaluated in advance as the anion exchange resin, and is equal to or less than a prescribed value. It was characterized by using an anion exchange resin which confirmed that.

In the tenth aspect, the ultrapure water producing system of the eleventh aspect is characterized in that the deionization apparatus is a mixed phase deionization apparatus having an anion exchange resin and a cation exchange resin.

In the tenth or eleventh aspect, the ultrapure water producing device of the twelfth aspect is characterized in that the prescribed value is 100 µg / L-anion exchange resin (wet state).

In the eleventh or twelfth aspect, the ultrapure water producing apparatus of the thirteenth aspect uses an H-type conversion rate of 99.95% or more as the cation exchange resin.

The ultrapure water production method of the 14th aspect used the deionization apparatus using the anion exchange resin which analyzed and evaluated cation elution amount beforehand and confirmed that it was below a prescribed value. It is characterized by the above-mentioned.

The ultrapure water production method of the fifteenth aspect uses the ultrapure water production apparatus of any of the tenth to thirteenth aspects.

The washing | cleaning method of the electronic component members of a 16th aspect washes electronic component members using the ultrapure water manufactured by the ultrapure water manufacturing apparatus in any one of 10th-13th aspect.

The washing | cleaning apparatus of the electronic component members of a 17th aspect was equipped with the ultrapure water manufacturing apparatus in any one of 10th-13th aspect as a washing | cleaning water manufacturing apparatus. It is characterized by the above-mentioned.

In the tenth to thirteenth embodiments, in the ultrapure water producing system in which a mixed phase deionization apparatus is provided as the last deionization apparatus, by using a cation elution amount that is equal to or less than a prescribed value as the anion exchange resin of the mixed phase deionization apparatus, The amount of metal eluted from the anion exchange resin is remarkably small, and as a result, it becomes possible to stably produce ultrapure water having a metal concentration of 0.1 ng / L or less.

As this prescribed value, 100 microgram / L-anion exchange resin (wet state), especially 50 microgram / L-anion exchange resin (wet state) are suitable.

In addition, by using an H-type conversion rate of 99.95% or more as the cation exchange resin, the amount of metal ions, especially sodium ions, leached from the cation exchange resin is also reduced, so that the ultrapure water whose metal ion concentration is sufficiently lower than 0.1 ng / L is stable. It can be prepared by.

1 is a flowchart of an ultrapure water producing system.
2 is a flowchart of an ultrapure water producing system.
3 is a flowchart of the ultrapure water producing system.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment is described with reference to drawings.

The ultrapure water producing system of the present invention is preferably a hybrid phase deionization device provided as the last deionization device. An example of the whole flow of such an ultrapure water producing system is shown in FIGS.

Each ultrapure water production apparatus of FIGS. 1-3 is comprised by the pretreatment system 1, the primary pure water system 2, and the sub system 3. As shown in FIG.

In the pretreatment system 1 which consists of agglomeration, pressurization (precipitation), a filtration apparatus, etc., the suspended matter and colloidal material in raw water are removed. In the primary pure water system 2 having a reverse osmosis (RO) membrane separator, a degasser, and an ion exchange device (mixing type, two-phase three-column type or four-phase five-column type), ions or organic components in raw water are removed. Remove In addition, the RO membrane separation device removes salts and removes ionic and colloidal TOC. In the ion exchange apparatus, along with the removal of the salts, the TOC component adsorbed or ion exchanged by the ion exchange resin is removed. In a degasser (nitrogen degassing or vacuum degassing), dissolved oxygen is removed.

In the ultrapure water producing system of FIG. 1, the primary pure water obtained in this manner (normally pure water having a TOC concentration of 2 ppb or less) is used in the sub tank 11, the pump P, the heat exchanger 12, and the UV oxidation device. (13), the catalyst oxidizing substance decomposition apparatus 14, the degassing apparatus 15, the interphase deionization apparatus (ion exchange apparatus) 16, and the microparticle separation membrane apparatus 17 are sequentially passed through, The ultrapure water obtained is sent to the point of use 18.

As the UV oxidizer 13, a UV oxidizer that irradiates UV having a wavelength of about 185 nm used in an ultrapure water production system, for example, a UV oxidizer using a low pressure mercury lamp can be used. In this UV oxidation device 13, TOC in the primary pure water is decomposed into an organic acid and also CO ₂ . In this UV oxidation device 13, H ₂ O ₂ is generated from water by excessively irradiated UV.

The treated water of the UV oxidation device is subsequently passed through the catalytic oxidizing material decomposition device 14. As the oxidative substance decomposition catalyst of the catalytic oxidizing substance decomposition apparatus 14, a noble metal catalyst known as a redox catalyst, such as a palladium (Pd) compound such as metal palladium, palladium oxide, palladium hydroxide or platinum (Pt), among others, a reducing action This powerful palladium catalyst can be used suitably.

By this catalytic oxidizing substance decomposition apparatus 14, H ₂ O ₂ and other oxidizing substances generated in the UV oxidizing apparatus 13 are efficiently decomposed and removed by the catalyst. In addition, although water is generated by decomposition of H ₂ O ₂ , oxygen is rarely generated like anion exchange resin or activated carbon, and does not cause an increase in DO.

The treated water of the catalytic oxidizing substance decomposing device 14 is subsequently passed through to the degassing device 15. As the degassing apparatus 15, a vacuum degassing apparatus, a nitrogen degassing apparatus, or a membrane type degassing apparatus can be used. By this degassing apparatus 15, the DO in the water and CO ₂ are removed efficiently.

The treated water of the degassing device 15 is subsequently passed to the mixed bed ion exchange device 16. As the mixed phase ion exchange device 16, a non-regeneration type mixed phase ion exchange device in which anion exchange resin and a cation exchange resin are mixed and filled in accordance with an ion load is used. The mixed phase ion exchange device 16 removes cations and anions in the water, thereby increasing the purity of the water.

The treated water of the mixed bed ion exchange device 16 is subsequently passed through to the fine particle separation device 17. As the fine particle separation device 17, an UF membrane separation device or the like used in a normal ultrapure water production device can be used. Outflow fine particles and the like of the exchange resin are removed, whereby high purity ultrapure water in which TOC, CO ₂ , DO, H ₂ O ₂ , ionic substances and fine particles are highly removed can be obtained.

1 is an example of the ultrapure water producing system of the present invention, and the ultrapure water producing system of the present invention is composed of a pretreatment system, a primary pure water system, and a sub-system in the same way as a conventional device. In the system, as long as the last ion exchange resin is provided with a mixed phase ion exchange device, various devices can be combined. For example, as shown in FIG. 2, the UV irradiated water from the UV oxidation device 13 may be introduced into the mixed phase deionization device 16 as it is. As shown in FIG. 3, an anion exchange tower 19 may be provided instead of the catalytic oxidizing substance decomposing device 14.

Although not shown, a RO membrane separation device may be provided behind the mixed phase ion exchange device. In addition, the raw water may be thermally decomposed under acidity of pH 4.5 or lower, and in the presence of an oxidizing agent to decompose urea and other TOC components in raw water, and then an ionization apparatus may be incorporated. The UV oxidation device, the mixed phase ion exchange device, the degassing device and the like may be provided in multiple stages. In addition, the pretreatment system 1 and the primary pure water system 2 are not limited to what is shown in the figure at all, and a combination of other various devices can be employed.

≪An aspect which makes the boron elution amount of anion exchange resin below a prescribed value >>

[Boron Content of Anion Exchange Resin]

In this embodiment, as the anion exchange resin of the mixed phase deionization unit 16 of the last stage of the ultrapure water production system, the boron content is below a prescribed value, preferably 50 μg / L-anion exchange resin (wet state) or less, particularly Preferably, 10 microgram / L-anion exchange resin (wet state) or less is used.

As described above, the anion exchange resin having a low boron concentration is regenerated by using a commercially available anion exchange resin or a used anion exchange resin using a low boron concentration alkali agent having a boron concentration of 10 µg / L or less, preferably 5 µg / L or less. Then, it can obtain by wash | cleaning (rinsing) using the low boron concentration ultrapure water whose boron concentration is 2 ng / L or less, Preferably it is 1 ng / L or less.

Examples of the alkali agent include NaOH, KOH, LiOH, NH ₃ , tetramethylammonium hydroxide, monoethanol and the like, but NaOH is particularly suitable.

[Method for Measuring Boron Content in Anion Exchange Resin]

The measuring method of boron content of anion exchange resin is as follows.

After evaluating the anion exchange resin for evaluation with ultrapure water having a boron concentration of 2 ng / L or less, 100 mL of the sample was collected in a clean plastic container, and 500 mL of reagent-grade nitric acid having a concentration of 4% was added thereto, followed by shaking for 1 hour. The boron concentration in nitric acid after shaking is analyzed.

Boron content is computed from this analysis value. In this calculation, the total amount of boron in the anion exchange resin shall be eluted in nitric acid. The boron content is calculated by dividing the amount of boron (μg) in nitric acid by the amount of anion exchange resin (L). When this boron content is 50 microgram / L-anion exchange resin or less, it is set as a pass product.

Moreover, as cation exchange resin used for a mixed-phase deionization apparatus, in order to reduce metal elution amount, especially sodium elution amount, it is suitable that H type conversion is 99.95% or more.

As for the ratio (volume%) with respect to all resin of the anion exchange resin in a mixed phase deionization apparatus, 80%-30% are especially suitable about 75%-50%.

[Examples and Comparative Examples]

Hereinafter, an Example and a comparative example are demonstrated.

≪ Example 1 >

The commercially available anion exchange resin (A) was regenerated with an aqueous NaOH 4 wt% solution with a boron concentration of 1 μg / L, washed with ultrapure water having a boron concentration of 2 ng / L or less, and then 100 mL was collected in a clean polypropylene production container. It was. To this, 500 mL of high-purity nitric acid (4%) was added and shaken for 1 hour by shaking at (5 strokes / sec), and then the boron concentration in nitric acid was measured according to inductively coupled plasma mass spectrometry (ICPMS).

The sodium concentration in resin was computed from the following formula.

Boron content of resin = [ICPMS analysis value (µg / L) X amount of nitric acid (0.5L)] / amount of resin (0.1L)

After washing with ultrapure water for this anion exchange resin, 500 mL was weighed, mixed with 500 mL of a cation exchange resin having an H-type conversion of at least 99.95%, filled in an acrylic column (40 mm in diameter, 800 mm in height) and mixed with A common sense deionizer was produced.

Ultrapure water (boron concentration of about 2 ng / L) was passed through the prepared mixed bed deionizer at a flow rate of 2.7 mL / min (SV160), and the boron concentration in the liquid after the passage was analyzed by inductively coupled plasma mass spectrometry.

The above results are shown in Table 1.

Comparative Example 1

In Example 1, the test was carried out similarly to Example 1 except having used the boron concentration of 25 microgram / L as an aqueous NaOH solution for regeneration. The results are shown in Table 1.

<Example 2, Comparative Example 2>

The test was carried out similarly to Example 1 and Comparative Example 1 except having used another commercially available anion exchange resin (B). The results are shown in Table 1.

<Example 3, Comparative Example 3>

The test was carried out similarly to Example 1 and Comparative Example 1 except having used another commercially available anion exchange resin (C). The results are shown in Table 1.

Negative ion
Exchange resin Of anion exchange resin
Boron Content (µg / L-AR) Boron concentration in mixed bed deionizer treated water (ng / L) Example 1 A 30 0.6 Comparative Example 1 A 300 1.6 Example 2 B 60 0.75 Comparative Example 2 B 250 1.4 Example 3 C 90 0.95 Comparative Example 3 C 200 1.2

As apparent from the results of Table 1, as anion exchange resin, the boron content was selected to be 50 µg / L-anion exchange resin (wet state) or less, and this was used in the mixed bed deionizer of the subsystem, thereby reducing the boron concentration to 1 ng. Ultrapure water of less than / L is produced.

<< aspect which makes cation elution amount from anion exchange resin into below a prescribed value >>

In this embodiment, as the anion exchange resin of the mixed bed type deionization unit 16 of the last stage of the ultrapure water producing system, the amount of cation elution is below a prescribed value, preferably 100 μg / L-anion exchange resin (wet state) or less, particularly Preferably, 50 microgram / L-anion exchange resin (wet state) or less is used. The measurement and evaluation method of this cation elution amount are as follows.

[Measurement and Evaluation Method of Cationic Elution]

After the evaluation anion exchange resin is washed with ultrapure water, 100 mL of the sample is collected in a clean plastic container, and 500 mL of high purity hydrochloric acid for analysis at a concentration of 4% is added thereto, followed by shaking for 1 hour. The metal concentration in hydrochloric acid after shaking is analyzed.

From this analysis value, the metal elution amount per unit resin amount is calculated. When this amount of elution is 100 µg / L-anion exchange resin or less, it is regarded as a pass product.

As a cation exchange resin used for a mixed-phase deionization apparatus, in order to reduce metal elution amount, especially sodium elution amount, it is suitable that H type conversion is 99.95% or more.

As for the ratio (volume%) with respect to all resin of the anion exchange resin in a mixed phase deionization apparatus, 80%-30% are especially suitable about 75%-50%.

[Examples and Comparative Examples]

Hereinafter, an Example and a comparative example are demonstrated.

<Examples 4-7, Comparative Examples 4 and 5>

After washing with commercially available anion exchange resins (D-I) with ultrapure water, 100 mL of each was collected in a clean polypropylene container. To this, 500 mL of high purity hydrochloric acid (4%) was added and shaken for 1 hour by shaking at (5 strokes / sec), and then the metal concentration in hydrochloric acid was measured by inductively coupled plasma mass spectrometry (ICPMS).

The sodium concentration in resin was computed from the following formula.

Sodium concentration in resin = [ICPMS analysis value (µg / L) x amount of hydrochloric acid (0.5 L)] / amount of resin (0.1 L)

After washing with ultrapure water for each anion exchange resin, 500 mL was weighed, mixed with 500 mL of a cation exchange resin having an H-type conversion of at least 99.95%, and filled into an acrylic column (40 mm in diameter and 800 mm in height). A common sense deionizer was produced.

Ultrapure water (Na concentration of about 0.1 ng / L) was passed through the prepared mixed bed deionizer at a flow rate of 833 mL / min (SV50), and the concentration of metal in the liquid after the passage was preconcentrated and analyzed by inductively coupled plasma mass spectrometry. It was.

The results are shown in Table 2.

Negative ion
Exchange resin Na in hydrochloric acid shake
(Μg / L-AR) Mixed bed deionizer treated water (ng / L) Comparative Example 4 D 440 0.2 Example 4 E 0.3 0.02 Example 5 F 10 0.03 Example 6 G 40 0.05 Example 7 H 80 0.08 Comparative Example 5 I 120 0.1

As is clear from the results in Table 2, the cation elution amount was selected to be 100 µg / L-anion exchange resin (wet state) or less as an anion exchange resin, and this was used in a mixed bed deionizer of the subsystem, thereby providing a metal concentration of 0.1 ng. Ultrapure water of less than / L is produced.

Although this invention was demonstrated in detail using the specific aspect, it is clear for those skilled in the art for various changes to be possible, without leaving | separating the intent and range of this invention.

In addition, this application is based on the Japanese patent application (patent application 2007-288733) applied on November 6, 2007 and the Japanese patent application (patent application 2007-288734) applied on November 6, 2007, and The entirety of which is incorporated by reference.

Claims (12)

In the ultrapure water producing apparatus having a deionization device having an anion exchange resin,
An ultrapure water producing system, characterized in that anion exchange resin is obtained by analyzing and evaluating boron content or cation elution amount in advance and confirming that the anion exchange resin is less than or equal to a prescribed value. The ultrapure water production apparatus according to claim 1, wherein a prescribed value of the boron content is 50 µg / L-anion exchange resin (wet state). The ultrapure water production apparatus according to claim 1, wherein a prescribed value of the cation elution amount is 100 µg / L-anion exchange resin (wet state). The ultrapure water production apparatus according to claim 3, wherein an H-type conversion rate of 99.95% or more is used as the cation exchange resin. The deionization apparatus according to claim 1, wherein the deionization apparatus is a mixed bed deionization apparatus having the anion exchange resin and the cation exchange resin, and is provided as a last deionization apparatus. Ultrapure water production apparatus. An ultrapure water production method characterized by using a deionization device using an anion exchange resin that analyzes and evaluates the boron elution amount in advance and confirms that it is equal to or less than a prescribed value. A method of producing ultrapure water characterized by using a deionization device using an anion exchange resin that analyzes and evaluates cation elution amount in advance and confirms that the amount is equal to or less than a prescribed value. The ultrapure water manufacturing method using the ultrapure water manufacturing apparatus in any one of Claims 1-5. The method for producing ultrapure water according to claim 6, wherein as the anion exchange resin, an anion exchange resin having a boron content of less than or equal to the specified value by regenerating with an alkali agent having a boron concentration of 10 µg / L or less is used. The method for producing ultrapure water according to claim 9, wherein an anion exchange resin washed with water having a boron concentration of 2 µg / L or less after regeneration with the alkali agent is used as the anion exchange resin. An electronic component member is cleaned using the ultrapure water produced by the ultrapure water production apparatus according to any one of claims 1 to 5. The ultrapure water manufacturing apparatus of any one of Claims 1-5 was provided as a washing | cleaning water manufacturing apparatus, The cleaning apparatus of the electronic component members.

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