KR20100035780A - 광 흡수용 화합물 박막 제조방법 - Google Patents
광 흡수용 화합물 박막 제조방법 Download PDFInfo
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- KR20100035780A KR20100035780A KR1020080095130A KR20080095130A KR20100035780A KR 20100035780 A KR20100035780 A KR 20100035780A KR 1020080095130 A KR1020080095130 A KR 1020080095130A KR 20080095130 A KR20080095130 A KR 20080095130A KR 20100035780 A KR20100035780 A KR 20100035780A
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- 239000010409 thin film Substances 0.000 claims abstract description 142
- 239000011669 selenium Substances 0.000 claims abstract description 95
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 48
- 150000001875 compounds Chemical class 0.000 claims abstract description 44
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000151 deposition Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 36
- 229910021476 group 6 element Inorganic materials 0.000 claims description 21
- 239000002243 precursor Substances 0.000 claims description 18
- 238000005229 chemical vapour deposition Methods 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 15
- 229910052717 sulfur Inorganic materials 0.000 claims description 15
- 125000002524 organometallic group Chemical group 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- 229910052714 tellurium Inorganic materials 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 230000031700 light absorption Effects 0.000 claims description 8
- 229910005543 GaSe Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 9
- 239000002341 toxic gas Substances 0.000 abstract description 4
- 238000000137 annealing Methods 0.000 abstract description 2
- 239000010949 copper Substances 0.000 description 51
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 description 4
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- 125000004429 atom Chemical group 0.000 description 2
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- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 2
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- 239000001301 oxygen Substances 0.000 description 2
- 229910000058 selane Inorganic materials 0.000 description 2
- NMHFBDQVKIZULJ-UHFFFAOYSA-N selanylideneindium Chemical compound [In]=[Se] NMHFBDQVKIZULJ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
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- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000243 photosynthetic effect Effects 0.000 description 1
- RMLSRFAOCMHQKX-UHFFFAOYSA-N propan-2-one;1,1,2-trichloroethene Chemical compound CC(C)=O.ClC=C(Cl)Cl RMLSRFAOCMHQKX-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 231100000925 very toxic Toxicity 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
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Abstract
Description
Claims (10)
- (a) 기판상에 I 족 물질을 증착하여 Ⅰ족 박막을 형성하는 단계;(b) 상기 I 족 박막의 표면에 Ⅵ 족 원소를 증착하여 I2-Ⅵ 박막을 형성하는 단계;(c) 상기 I2-Ⅵ 족 박막 표면에 Ⅲ-Ⅵ 족 원소를 증착하여 Ⅲ-Ⅵ 족 박막을 형성하는 단계;(d) 상기 Ⅲ-Ⅵ 족 박막이 형성된 기판을 Ⅵ족 원소 분위기에서 열처리하는 단계를 포함하는 것을 특징으로 하는 광흡수용 박막 제조방법.
- 제1항에 있어서,상기 광흡수용 박막은 Ⅰ-Ⅲ-Ⅵ2 화합물 박막인 것을 특징으로 하는 광흡수용 박막 제조방법.
- 제2항에 있어서,상기 Ⅰ-Ⅲ-Ⅵ2 화합물 박막은 태양전지용 박막인 것을 특징으로 하는 광흡수용 박막 제조방법.
- 제1항에 있어서,상기 Ⅲ-Ⅵ 족 박막의 형성은 유기금속 화학기상 증착법(MOCVD)을 이용하는 것을 특징으로 하는 광흡수용 박막 제조방법.
- 제4항에 있어서,상기 유기금속 화학기상 증착법(MOCVD)은 상기 I2-Ⅵ 박막이 형성된 기판상에 Ⅲ족 및 Ⅵ족 원소를 포함하는 단일 전구체를 사용하여 차례로 증착시켜 이중 박막을 형성하는 것을 특징으로 하는 태양광 흡수용 화합물 박막 제조방법.
- 제1항에 있어서,상기 (b) 단계는 상기 챔버 내부에 상기 Ⅰ족 박막이 형성된 기판과 Ⅵ 족 원소의 증착 물질을 구비하는 단계;상기 챔버를 진공상태로 유지하는 단계; 및상기 챔버를 가열하는 단계를 포함하는 것을 특징으로 하는 광흡수용 박막 제조방법.
- 제1항에 있어서,상기 (c) 단계는 상기 I2-Ⅵ 족 박막 표면에 Ⅲ-Ⅵ 족 박막을 형성하는 단계 및 상기 Ⅲ-Ⅵ 족 박막에 Ⅲ'-Ⅵ 족 박막(Ⅲ 및 Ⅲ' 은 동일한 족을 갖는 서로 다 른 물질을 나타낸다.)을 형성하는 단계를 포함하는 것을 특징으로 하는 광흡수용 박막 제조방법.
- 제1항 내지 제7항 중 어느 한 항에 있어서,상기 Ⅰ족 원소는 Cu 또는 Ag이고, Ⅲ 족 원소는 In, Ga 또는 Al에서 선택된 것이고, Ⅵ족 원소는 Se, Te 또는 S에서 선택된 것을 특징으로 하는 광흡수용 박막 제조방법.
- 제1항 내지 제7항 중 어느 한 항에 있어서,상기 (C) 단계에서 이중으로 형성된 박막은 [Me(2)In-(μSeMe)](2) 및 [Me(2)Ga-(μSeMe)](2)를 포함하는 전구체(Me는 C1~C6의 알킬기를 나타내며, μ는 이중으로 브리지된 결합을 하고 있음을 나타낸다.)를 사용하여 차례로 유기금속 화학증착법으로 형성된 것을 특징으로 하는 광흡수용 박막 제조방법.
- (a) 기판상에 Cu를 증착하여 Cu 박막을 형성하는 단계;(b) 상기 Cu 박막의 표면에 셀렌을 증착하여 Cu2Se 박막을 형성하는 단계;(c) 상기 Cu2Se 박막 표면에 InSe 박막 및 GaSe 박막을 유기금속 화학기상 증착법으로 차례로 형성하는 단계; 및(d) 상기 (c) 단계의 박막이 형성된 기판을 Se 분위기에서 열처리하는 단계를 포함 하는 것을 특징으로 하는 광흡수용 박막 제조방법.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101134568B1 (ko) * | 2010-04-21 | 2012-04-13 | 한국과학기술연구원 | 실리콘 기판위에 단결정 CdTe 박막을 제조하는 방법 |
WO2017122842A1 (ko) * | 2016-01-13 | 2017-07-20 | 주식회사 메카로 | Cigs 광흡수층을 포함하는 태양전지 및 이의 제조방법 |
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KR101075873B1 (ko) | 2010-10-04 | 2011-10-25 | 한국에너지기술연구원 | 페이스트 또는 잉크를 이용한 구리인듐셀렌계 또는 구리인듐갈륨셀렌계 박막의 제조 방법 |
KR101229310B1 (ko) | 2011-02-14 | 2013-02-04 | 재단법인대구경북과학기술원 | 박막태양전지의 광흡수층 제조방법 |
KR101628312B1 (ko) * | 2013-10-31 | 2016-06-09 | 재단법인대구경북과학기술원 | CZTSSe계 박막 태양전지의 제조방법 및 이에 의해 제조된 CZTSSe계 박막 태양전지 |
KR101462498B1 (ko) * | 2013-12-18 | 2014-11-19 | 한국생산기술연구원 | Cigs 흡수층 제조방법, 이를 이용한 박막 태양전지 제조방법 및 박막 태양전지 |
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KR100495925B1 (ko) * | 2005-01-12 | 2005-06-17 | (주)인솔라텍 | 태양전지용 광흡수층 및 그 제조 방법 |
KR100857227B1 (ko) * | 2007-03-13 | 2008-09-05 | (주)인솔라텍 | 단일 유기금속 화학기상 증착 공정에 의한 ⅰ-ⅲ-ⅵ2화합물 박막의 제조방법 |
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Cited By (8)
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KR101134568B1 (ko) * | 2010-04-21 | 2012-04-13 | 한국과학기술연구원 | 실리콘 기판위에 단결정 CdTe 박막을 제조하는 방법 |
WO2017122842A1 (ko) * | 2016-01-13 | 2017-07-20 | 주식회사 메카로 | Cigs 광흡수층을 포함하는 태양전지 및 이의 제조방법 |
KR20180056676A (ko) * | 2016-01-13 | 2018-05-29 | 주식회사 메카로 | Cigs 광흡수층을 포함하는 태양전지 및 이의 제조방법 |
CN108541349A (zh) * | 2016-01-13 | 2018-09-14 | 马卡罗有限公司 | 包括cigs光吸收层的太阳能电池及其制造方法 |
JP2019502265A (ja) * | 2016-01-13 | 2019-01-24 | メカロ カンパニー リミテッドMecaro Co.,Ltd. | Cigs光吸収層を含む太陽電池及びその製造方法 |
US20190157487A1 (en) * | 2016-01-13 | 2019-05-23 | Mecaro Co.,Ltd. | Solar cell comprising cigs light absorbing layer and method for manufacturing same |
US10727366B2 (en) | 2016-01-13 | 2020-07-28 | Mecaroenergy Co., Ltd. | Solar cell comprising CIGS light absorbing layer and method for manufacturing same |
CN108541349B (zh) * | 2016-01-13 | 2021-06-22 | 马卡罗能源有限公司 | 包括cigs光吸收层的太阳能电池及其制造方法 |
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