US7447847B2
(en)
*
|
2004-07-19 |
2008-11-04 |
Micron Technology, Inc. |
Memory device trims
|
US7269066B2
(en)
*
|
2005-05-11 |
2007-09-11 |
Micron Technology, Inc. |
Programming memory devices
|
KR100655442B1
(ko)
*
|
2005-09-01 |
2006-12-08 |
삼성전자주식회사 |
프로그램 스타트 전압을 가변시킬 수 있는 플래시 메모리장치
|
US7580287B2
(en)
|
2005-09-01 |
2009-08-25 |
Micron Technology, Inc. |
Program and read trim setting
|
US7463520B2
(en)
*
|
2006-03-24 |
2008-12-09 |
Micron Technology, Inc. |
Memory device with variable trim settings
|
WO2007132452A2
(fr)
|
2006-05-12 |
2007-11-22 |
Anobit Technologies |
Réduction des erreurs de programmation dans des dispositifs de mémoire
|
US8239735B2
(en)
|
2006-05-12 |
2012-08-07 |
Apple Inc. |
Memory Device with adaptive capacity
|
WO2007132457A2
(fr)
|
2006-05-12 |
2007-11-22 |
Anobit Technologies Ltd. |
Procédé combiné de codage de correction d'erreur et d'estimation de déformation destiné à des dispositifs de mémoire
|
CN103280239B
(zh)
|
2006-05-12 |
2016-04-06 |
苹果公司 |
存储设备中的失真估计和消除
|
WO2008026203A2
(fr)
|
2006-08-27 |
2008-03-06 |
Anobit Technologies |
Estimation de distorsion non linéaire dans des dispositifs à mémoire
|
US7821826B2
(en)
|
2006-10-30 |
2010-10-26 |
Anobit Technologies, Ltd. |
Memory cell readout using successive approximation
|
US7975192B2
(en)
|
2006-10-30 |
2011-07-05 |
Anobit Technologies Ltd. |
Reading memory cells using multiple thresholds
|
US7924648B2
(en)
|
2006-11-28 |
2011-04-12 |
Anobit Technologies Ltd. |
Memory power and performance management
|
US7511996B2
(en)
*
|
2006-11-30 |
2009-03-31 |
Mosaid Technologies Incorporated |
Flash memory program inhibit scheme
|
US8151163B2
(en)
|
2006-12-03 |
2012-04-03 |
Anobit Technologies Ltd. |
Automatic defect management in memory devices
|
US7593263B2
(en)
*
|
2006-12-17 |
2009-09-22 |
Anobit Technologies Ltd. |
Memory device with reduced reading latency
|
US7900102B2
(en)
|
2006-12-17 |
2011-03-01 |
Anobit Technologies Ltd. |
High-speed programming of memory devices
|
US8151166B2
(en)
|
2007-01-24 |
2012-04-03 |
Anobit Technologies Ltd. |
Reduction of back pattern dependency effects in memory devices
|
US7751240B2
(en)
|
2007-01-24 |
2010-07-06 |
Anobit Technologies Ltd. |
Memory device with negative thresholds
|
WO2008111058A2
(fr)
|
2007-03-12 |
2008-09-18 |
Anobit Technologies Ltd. |
Estimation adaptative de seuils de lecture de cellules mémoires
|
US8001320B2
(en)
|
2007-04-22 |
2011-08-16 |
Anobit Technologies Ltd. |
Command interface for memory devices
|
US7924616B2
(en)
*
|
2007-05-04 |
2011-04-12 |
Micron Technology, Inc. |
Word line voltage boost system and method for non-volatile memory devices and memory devices and processor-based system using same
|
WO2008139441A2
(fr)
|
2007-05-12 |
2008-11-20 |
Anobit Technologies Ltd. |
Dispositif de mémoire à unité de traitement de signal interne
|
US8234545B2
(en)
|
2007-05-12 |
2012-07-31 |
Apple Inc. |
Data storage with incremental redundancy
|
KR100936876B1
(ko)
|
2007-06-27 |
2010-01-14 |
주식회사 하이닉스반도체 |
플래시 메모리 장치의 프로그램 방법
|
US7925936B1
(en)
|
2007-07-13 |
2011-04-12 |
Anobit Technologies Ltd. |
Memory device with non-uniform programming levels
|
US8259497B2
(en)
|
2007-08-06 |
2012-09-04 |
Apple Inc. |
Programming schemes for multi-level analog memory cells
|
US8174905B2
(en)
|
2007-09-19 |
2012-05-08 |
Anobit Technologies Ltd. |
Programming orders for reducing distortion in arrays of multi-level analog memory cells
|
US7773413B2
(en)
|
2007-10-08 |
2010-08-10 |
Anobit Technologies Ltd. |
Reliable data storage in analog memory cells in the presence of temperature variations
|
US8527819B2
(en)
|
2007-10-19 |
2013-09-03 |
Apple Inc. |
Data storage in analog memory cell arrays having erase failures
|
US8068360B2
(en)
|
2007-10-19 |
2011-11-29 |
Anobit Technologies Ltd. |
Reading analog memory cells using built-in multi-threshold commands
|
US8000141B1
(en)
|
2007-10-19 |
2011-08-16 |
Anobit Technologies Ltd. |
Compensation for voltage drifts in analog memory cells
|
US8270246B2
(en)
|
2007-11-13 |
2012-09-18 |
Apple Inc. |
Optimized selection of memory chips in multi-chips memory devices
|
US8225181B2
(en)
|
2007-11-30 |
2012-07-17 |
Apple Inc. |
Efficient re-read operations from memory devices
|
JP5178167B2
(ja)
*
|
2007-12-04 |
2013-04-10 |
株式会社東芝 |
半導体記憶装置及びそのデータ書き込み方法
|
US8209588B2
(en)
|
2007-12-12 |
2012-06-26 |
Anobit Technologies Ltd. |
Efficient interference cancellation in analog memory cell arrays
|
US8456905B2
(en)
|
2007-12-16 |
2013-06-04 |
Apple Inc. |
Efficient data storage in multi-plane memory devices
|
US8085586B2
(en)
|
2007-12-27 |
2011-12-27 |
Anobit Technologies Ltd. |
Wear level estimation in analog memory cells
|
US7916544B2
(en)
|
2008-01-25 |
2011-03-29 |
Micron Technology, Inc. |
Random telegraph signal noise reduction scheme for semiconductor memories
|
US8156398B2
(en)
|
2008-02-05 |
2012-04-10 |
Anobit Technologies Ltd. |
Parameter estimation based on error correction code parity check equations
|
US7924587B2
(en)
|
2008-02-21 |
2011-04-12 |
Anobit Technologies Ltd. |
Programming of analog memory cells using a single programming pulse per state transition
|
US7864573B2
(en)
|
2008-02-24 |
2011-01-04 |
Anobit Technologies Ltd. |
Programming analog memory cells for reduced variance after retention
|
US8230300B2
(en)
|
2008-03-07 |
2012-07-24 |
Apple Inc. |
Efficient readout from analog memory cells using data compression
|
US8059457B2
(en)
|
2008-03-18 |
2011-11-15 |
Anobit Technologies Ltd. |
Memory device with multiple-accuracy read commands
|
US8400858B2
(en)
|
2008-03-18 |
2013-03-19 |
Apple Inc. |
Memory device with reduced sense time readout
|
US7995388B1
(en)
|
2008-08-05 |
2011-08-09 |
Anobit Technologies Ltd. |
Data storage using modified voltages
|
US7924613B1
(en)
|
2008-08-05 |
2011-04-12 |
Anobit Technologies Ltd. |
Data storage in analog memory cells with protection against programming interruption
|
US8949684B1
(en)
|
2008-09-02 |
2015-02-03 |
Apple Inc. |
Segmented data storage
|
US8169825B1
(en)
|
2008-09-02 |
2012-05-01 |
Anobit Technologies Ltd. |
Reliable data storage in analog memory cells subjected to long retention periods
|
US8482978B1
(en)
|
2008-09-14 |
2013-07-09 |
Apple Inc. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US8000135B1
(en)
|
2008-09-14 |
2011-08-16 |
Anobit Technologies Ltd. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US8239734B1
(en)
|
2008-10-15 |
2012-08-07 |
Apple Inc. |
Efficient data storage in storage device arrays
|
JP5193796B2
(ja)
*
|
2008-10-21 |
2013-05-08 |
株式会社東芝 |
3次元積層型不揮発性半導体メモリ
|
US8261159B1
(en)
|
2008-10-30 |
2012-09-04 |
Apple, Inc. |
Data scrambling schemes for memory devices
|
US8134868B2
(en)
|
2008-11-06 |
2012-03-13 |
Micron Technology, Inc. |
Memory device biasing method and apparatus
|
US8208304B2
(en)
|
2008-11-16 |
2012-06-26 |
Anobit Technologies Ltd. |
Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
|
US8397131B1
(en)
|
2008-12-31 |
2013-03-12 |
Apple Inc. |
Efficient readout schemes for analog memory cell devices
|
US8248831B2
(en)
|
2008-12-31 |
2012-08-21 |
Apple Inc. |
Rejuvenation of analog memory cells
|
US8924661B1
(en)
|
2009-01-18 |
2014-12-30 |
Apple Inc. |
Memory system including a controller and processors associated with memory devices
|
KR101551449B1
(ko)
*
|
2009-02-25 |
2015-09-08 |
삼성전자주식회사 |
비휘발성 메모리 장치 및 그것을 포함한 메모리 시스템
|
US8228701B2
(en)
|
2009-03-01 |
2012-07-24 |
Apple Inc. |
Selective activation of programming schemes in analog memory cell arrays
|
US8259506B1
(en)
|
2009-03-25 |
2012-09-04 |
Apple Inc. |
Database of memory read thresholds
|
US8832354B2
(en)
|
2009-03-25 |
2014-09-09 |
Apple Inc. |
Use of host system resources by memory controller
|
US8238157B1
(en)
|
2009-04-12 |
2012-08-07 |
Apple Inc. |
Selective re-programming of analog memory cells
|
US8479080B1
(en)
|
2009-07-12 |
2013-07-02 |
Apple Inc. |
Adaptive over-provisioning in memory systems
|
US8495465B1
(en)
|
2009-10-15 |
2013-07-23 |
Apple Inc. |
Error correction coding over multiple memory pages
|
US8677054B1
(en)
|
2009-12-16 |
2014-03-18 |
Apple Inc. |
Memory management schemes for non-volatile memory devices
|
US8694814B1
(en)
|
2010-01-10 |
2014-04-08 |
Apple Inc. |
Reuse of host hibernation storage space by memory controller
|
US8572311B1
(en)
|
2010-01-11 |
2013-10-29 |
Apple Inc. |
Redundant data storage in multi-die memory systems
|
US8358540B2
(en)
*
|
2010-01-13 |
2013-01-22 |
Micron Technology, Inc. |
Access line dependent biasing schemes
|
US8694853B1
(en)
|
2010-05-04 |
2014-04-08 |
Apple Inc. |
Read commands for reading interfering memory cells
|
US8572423B1
(en)
|
2010-06-22 |
2013-10-29 |
Apple Inc. |
Reducing peak current in memory systems
|
US8595591B1
(en)
|
2010-07-11 |
2013-11-26 |
Apple Inc. |
Interference-aware assignment of programming levels in analog memory cells
|
US9104580B1
(en)
|
2010-07-27 |
2015-08-11 |
Apple Inc. |
Cache memory for hybrid disk drives
|
US8767459B1
(en)
|
2010-07-31 |
2014-07-01 |
Apple Inc. |
Data storage in analog memory cells across word lines using a non-integer number of bits per cell
|
US8856475B1
(en)
|
2010-08-01 |
2014-10-07 |
Apple Inc. |
Efficient selection of memory blocks for compaction
|
US8694854B1
(en)
|
2010-08-17 |
2014-04-08 |
Apple Inc. |
Read threshold setting based on soft readout statistics
|
US9021181B1
(en)
|
2010-09-27 |
2015-04-28 |
Apple Inc. |
Memory management for unifying memory cell conditions by using maximum time intervals
|
US9236102B2
(en)
|
2012-10-12 |
2016-01-12 |
Micron Technology, Inc. |
Apparatuses, circuits, and methods for biasing signal lines
|
US9672875B2
(en)
|
2014-01-27 |
2017-06-06 |
Micron Technology, Inc. |
Methods and apparatuses for providing a program voltage responsive to a voltage determination
|
US10134475B2
(en)
*
|
2015-03-31 |
2018-11-20 |
Silicon Storage Technology, Inc. |
Method and apparatus for inhibiting the programming of unselected bitlines in a flash memory system
|
US9711228B1
(en)
|
2016-05-27 |
2017-07-18 |
Micron Technology, Inc. |
Apparatus and methods of operating memory with erase de-bias
|
EP3602024A4
(fr)
*
|
2017-03-21 |
2020-11-18 |
Hayward Industries, Inc. |
Systèmes et procédés de désinfection d'eau de piscine et d'eau d'établissement thermal
|
US10957410B1
(en)
*
|
2018-03-02 |
2021-03-23 |
Crossbar, Inc. |
Methods and apparatus for facilitated program and erase of two-terminal memory devices
|
US11557345B2
(en)
*
|
2018-12-20 |
2023-01-17 |
Micron Technology, Inc. |
Dynamic memory programming voltage step for strenuous device conditions
|
US11556416B2
(en)
|
2021-05-05 |
2023-01-17 |
Apple Inc. |
Controlling memory readout reliability and throughput by adjusting distance between read thresholds
|
US11847342B2
(en)
|
2021-07-28 |
2023-12-19 |
Apple Inc. |
Efficient transfer of hard data and confidence levels in reading a nonvolatile memory
|
WO2024197764A1
(fr)
*
|
2023-03-31 |
2024-10-03 |
Yangtze Memory Technologies Co., Ltd. |
Dispositif de mémoire et son procédé de fonctionnement
|