KR20090075025A - 평판형 접촉연소식 수소 및 가연성 가스센서 및 그제조방법 - Google Patents
평판형 접촉연소식 수소 및 가연성 가스센서 및 그제조방법 Download PDFInfo
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- KR20090075025A KR20090075025A KR1020080000778A KR20080000778A KR20090075025A KR 20090075025 A KR20090075025 A KR 20090075025A KR 1020080000778 A KR1020080000778 A KR 1020080000778A KR 20080000778 A KR20080000778 A KR 20080000778A KR 20090075025 A KR20090075025 A KR 20090075025A
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- platinum
- sensor
- heater wire
- alumina substrate
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000007084 catalytic combustion reaction Methods 0.000 title claims abstract 4
- 238000000034 method Methods 0.000 title claims description 26
- 239000007789 gas Substances 0.000 title abstract description 16
- 239000001257 hydrogen Substances 0.000 title abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 title abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 123
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 48
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 41
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000001035 drying Methods 0.000 claims abstract description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000010931 gold Substances 0.000 claims abstract description 11
- 229910052737 gold Inorganic materials 0.000 claims abstract description 11
- 238000001514 detection method Methods 0.000 claims description 20
- 239000000567 combustion gas Substances 0.000 claims description 11
- 239000003054 catalyst Substances 0.000 claims description 7
- 230000004927 fusion Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 101150003085 Pdcl gene Proteins 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 229910000510 noble metal Inorganic materials 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 238000000151 deposition Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 238000002485 combustion reaction Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 5
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- -1 alumina or titania Chemical class 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
- G01N27/16—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by burning or catalytic oxidation of surrounding material to be tested, e.g. of gas
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
- G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
- G01N33/005—H2
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Food Science & Technology (AREA)
- Medicinal Chemistry (AREA)
- Nanotechnology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
Claims (9)
- 평판형 접촉 연소식 가스센서를 제조하는 방법으로서, 가로 및 세로가 각각 5 내지 15cm인 알루미나 기판막을 가로 및 세로가 각각 0.1 내지 3.0mm가 되도록 가로와 세로로 레이져 다이싱(dicing)하는 단계; 각각의 다이싱된 알루미나 기판막에 금속 마스크를 이용하여 백금을 증착시켜 지그제그형 백금 히터선과 그 백금 히터선 양 끝단의 전극패드를 형성시키거나, 마스크 없이 기판막 전체에 백금을 증착한 후에 포토레지스트 마스크를 이용하여 사진식각법으로 지그제그형 백금 히터선과 그 양 끝단의 전극패드를 형성시키는 단계; 백금 히터선의 양 끝단에 형성된 전극패드에 백금 또는 금으로 형성된 리드 와이어를 백금 또는 금 페이스트를 이용하여 부착시키는 단계; 및 백금 히터선, 전극패드 및 리드와이어가 부착된 알루미나 기판의 아래 위 양면에 검지물질을 도포하고 건조한 후에 600 내지 1000℃로 열처리하여 센서검지체를 형성시키는 단계를 포함하여 알루미나 기판을 사용하혀 초소형 접촉연소식 가스센서를 제조하는 방법.
- 제 1항에 있어서, 검지물질이 백금족 촉매 PdCl2, PtCl2 및 알루미나 분말 혼합물로 구성됨을 특징으로 하는 방법.
- 제 1항 또는 제 2항에 있어서, 백금 히터선의 폭이 30 내지 70um이며, 길이가 150 내지 550um이고, 지그제그형으로 형성된 선 간격이 55 내지 95um이고, 백금 히터선의 양단에 형성된 패드의 가로가 150 내지 550um이고 세로가 100 내지 400um이며, 백금 히터선이 2 내지 5회 반복된 지그제그형임을 특징으로 하는 방법.
- 제 1항 또는 제 2항에 있어서, 히터선의 양 끝단에 형성된 전극패드에 리드와이어를 부착하는 단계가 직경 20 내지 70um의 백금 혹은 금과 같은 귀금속 리드와이어를 백금이나 금페이스트를 융착제로 발라서 건조 열처리하며, 페이스트 건조는 20℃ 내지 100℃에서 10분에서 2시간하고, 열처리는 400℃ 내지 900℃에서 5 내지 30분간 수행함을 특징으로 하는 방법.
- 제 1항 또는 제 2항에 있어서, 검지물질을 도포 및 건조하고 열처리하는 단계가, 리드와이어가 부착된 기판 알루미나 기판막에 검지물질 페이스트를 소량 떨어뜨려서 기판의 앞뒤를 포함한 전체면에 도포하여 4각의 둥근 구형의 센서검지체 모양을 형성하고, 2 내지 4볼트 전기통전으로 20℃ 내지 100℃에서 10분에서 2시간동안 건조하고, 3 내지 10볼트로 600 내지 1000℃, 10 내지 40분간 공기분위기 열처리로 센서검지체를 단단하게 만든 후, 완성된 센서는 전압을 2 내지 6볼트 공급 하여 백금히터가 발생하는 자체 열로 1 내지 10시간 에이징함을 특징으로 하는 방법.
- 제 1항에 따른 방법으로 제조된 접촉연소식 가스센서로서, 가로와 세로가 각각 0.1 내지 3.0mm인 알루미나 기판막; 이러한 알루미나 기판막상에 증착된 백금히터선과, 백금 히터선의 양단에 형성된 전극패드; 전극패드에 부착된 리드와이어; 및 백금 히터선, 전극패드 및 리드와이어가 부착된 알루미나 기판의 아래 위 양면에 검지물질을 도포하고 건조한 후에 열처리함으로써 형성된 센서검지체를 포함하는 접촉연소식 가스센서.
- 제 6항에 있어서, 백금히터선이 폭이 30 내지 70um이며, 길이가 150 내지 550um이고, 2 내지 5회 지그제그형으로 반복되며 그 반복된 선 간격이 55 내지 95um이며, 저항이 20 내지 90오옴임을 특징으로 하는 접촉연소식 가스센서.
- 제 6항 또는 제 7항에 있어서, 전극패드가 가로가 150 내지 550um이고, 세로가 100 내지 400um임을 특징으로 하는 접촉연소식 가스센서.
- 제 6항 또는 제 7항에 있어서, 센서검지체를 형성시키는 검지물질이 백금족 촉매 PdCl2, PtCl2 및 알루미나 분말 혼합물로 구성됨을 특징으로 하는 접촉연소식 가스센서.
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KR1020080000778A KR100929025B1 (ko) | 2008-01-03 | 2008-01-03 | 평판형 접촉연소식 수소 및 가연성 가스센서 및 그제조방법 |
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Cited By (1)
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CN113406147A (zh) * | 2021-05-08 | 2021-09-17 | 中北大学 | 一种氢气敏感元件及制备方法 |
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WO2015030528A1 (ko) * | 2013-08-30 | 2015-03-05 | 에스케이이노베이션 주식회사 | 가스센서 및 그 제조방법 |
WO2022030932A1 (ko) | 2020-08-06 | 2022-02-10 | 주식회사 센텍코리아 | 가스 센서 |
KR102434850B1 (ko) | 2020-11-24 | 2022-08-23 | (주)센텍코리아 | 보조 히터를 구비한 가스 센서 및 그 제조 방법 |
KR20240006109A (ko) | 2022-07-05 | 2024-01-15 | (주)센텍코리아 | 가스 센서 |
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JPS6228652A (ja) | 1985-07-31 | 1987-02-06 | Toshiba Corp | 感ガス素子の支持装置 |
KR100332742B1 (ko) * | 1994-10-26 | 2002-11-23 | 엘지전자주식회사 | 가스센서의제조방법 |
KR19990054775A (ko) * | 1997-12-26 | 1999-07-15 | 조희재 | 후막인쇄형 가스센서의 제조방법 |
KR100450046B1 (ko) * | 2002-11-25 | 2004-09-30 | 카오스 주식회사 | 센서 소자의 패키징 방법 및 그 구조 |
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