KR20090040374A - Led 장치 및 액정 표시 장치의 백 패널 - Google Patents
Led 장치 및 액정 표시 장치의 백 패널 Download PDFInfo
- Publication number
- KR20090040374A KR20090040374A KR1020097004952A KR20097004952A KR20090040374A KR 20090040374 A KR20090040374 A KR 20090040374A KR 1020097004952 A KR1020097004952 A KR 1020097004952A KR 20097004952 A KR20097004952 A KR 20097004952A KR 20090040374 A KR20090040374 A KR 20090040374A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- led
- led device
- electrical circuit
- diamond
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 39
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 15
- 239000010949 copper Substances 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 9
- 238000002386 leaching Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018131 Al-Mn Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 229910018464 Al—Mg—Si Inorganic materials 0.000 description 1
- 229910018461 Al—Mn Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910018571 Al—Zn—Mg Inorganic materials 0.000 description 1
- 229910018569 Al—Zn—Mg—Cu Inorganic materials 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- 229910017816 Cu—Co Inorganic materials 0.000 description 1
- 229910017813 Cu—Cr Inorganic materials 0.000 description 1
- 229910017827 Cu—Fe Inorganic materials 0.000 description 1
- 229910017824 Cu—Fe—P Inorganic materials 0.000 description 1
- 229910017876 Cu—Ni—Si Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 229910017313 Mo—Co Inorganic materials 0.000 description 1
- 229910017318 Mo—Ni Inorganic materials 0.000 description 1
- 229910009038 Sn—P Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- QFXZANXYUCUTQH-UHFFFAOYSA-N ethynol Chemical group OC#C QFXZANXYUCUTQH-UHFFFAOYSA-N 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83702206P | 2006-08-11 | 2006-08-11 | |
US60/837,022 | 2006-08-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20090040374A true KR20090040374A (ko) | 2009-04-23 |
Family
ID=38717895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097004952A KR20090040374A (ko) | 2006-08-11 | 2007-08-10 | Led 장치 및 액정 표시 장치의 백 패널 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP2050146A1 (zh) |
JP (1) | JP2010500778A (zh) |
KR (1) | KR20090040374A (zh) |
CN (1) | CN101501873A (zh) |
TW (1) | TW200822399A (zh) |
WO (1) | WO2008021268A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101237685B1 (ko) * | 2011-03-29 | 2013-02-26 | 삼성전기주식회사 | 방열 기판 및 그 제조방법 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8598602B2 (en) | 2009-01-12 | 2013-12-03 | Cree, Inc. | Light emitting device packages with improved heat transfer |
US7923739B2 (en) | 2009-06-05 | 2011-04-12 | Cree, Inc. | Solid state lighting device |
US8440500B2 (en) * | 2009-05-20 | 2013-05-14 | Interlight Optotech Corporation | Light emitting device |
US8860043B2 (en) | 2009-06-05 | 2014-10-14 | Cree, Inc. | Light emitting device packages, systems and methods |
US9111778B2 (en) | 2009-06-05 | 2015-08-18 | Cree, Inc. | Light emitting diode (LED) devices, systems, and methods |
CN101887942A (zh) * | 2010-06-07 | 2010-11-17 | 江苏鑫钻新材料科技有限公司 | 一种安装led的金属基板及其制造方法 |
US8269244B2 (en) | 2010-06-28 | 2012-09-18 | Cree, Inc. | LED package with efficient, isolated thermal path |
CN102469680A (zh) * | 2010-11-05 | 2012-05-23 | 寇崇善 | 高导热电路板及其制作方法 |
JP5159872B2 (ja) | 2010-12-27 | 2013-03-13 | 株式会社東芝 | テレビジョン受像機 |
JP5032651B2 (ja) | 2010-12-27 | 2012-09-26 | 株式会社東芝 | テレビジョン受像機、及び電子機器 |
TW201251140A (en) | 2011-01-31 | 2012-12-16 | Cree Inc | High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion |
WO2012109225A1 (en) | 2011-02-07 | 2012-08-16 | Cree, Inc. | Components and methods for light emitting diode (led) lighting |
CN105633234A (zh) * | 2012-03-15 | 2016-06-01 | 安徽三安光电有限公司 | 氮化镓基半导体生长衬底及其制作方法 |
CN102983124B (zh) * | 2012-11-14 | 2015-06-10 | 深圳大学 | 具有散热装置的led光源 |
CN103346242A (zh) * | 2013-07-05 | 2013-10-09 | 苏州热驰光电科技有限公司 | 基于玻璃基板的led器件及其制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001004856A (ja) * | 1999-06-24 | 2001-01-12 | Nec Corp | 光モジュール実装基板およびその製造方法 |
US7273598B2 (en) * | 2001-01-19 | 2007-09-25 | Chevron U.S.A. Inc. | Diamondoid-containing materials for passivating layers in integrated circuit devices |
US20060113546A1 (en) * | 2002-10-11 | 2006-06-01 | Chien-Min Sung | Diamond composite heat spreaders having low thermal mismatch stress and associated methods |
US7396735B2 (en) * | 2002-12-09 | 2008-07-08 | Kabushiki Kaisha Toyota Chuo Kenkyusyo | Semiconductor element heat dissipating member, semiconductor device using same, and method for manufacturing same |
JP4283738B2 (ja) * | 2004-07-08 | 2009-06-24 | 浜松ホトニクス株式会社 | 半導体レーザ装置 |
DE102004036960A1 (de) * | 2004-07-30 | 2006-03-23 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Leiterplatte und Verfahren zur Herstellung einer solchen Leiterplatte |
-
2007
- 2007-08-10 CN CNA2007800295843A patent/CN101501873A/zh active Pending
- 2007-08-10 EP EP07811260A patent/EP2050146A1/en not_active Withdrawn
- 2007-08-10 WO PCT/US2007/017843 patent/WO2008021268A1/en active Application Filing
- 2007-08-10 KR KR1020097004952A patent/KR20090040374A/ko not_active Application Discontinuation
- 2007-08-10 JP JP2009524636A patent/JP2010500778A/ja active Pending
- 2007-08-13 TW TW96129882A patent/TW200822399A/zh unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101237685B1 (ko) * | 2011-03-29 | 2013-02-26 | 삼성전기주식회사 | 방열 기판 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
CN101501873A (zh) | 2009-08-05 |
WO2008021268A1 (en) | 2008-02-21 |
TW200822399A (en) | 2008-05-16 |
EP2050146A1 (en) | 2009-04-22 |
JP2010500778A (ja) | 2010-01-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |