WO2008021268A1 - Led device and back panel of liquid crystal display - Google Patents
Led device and back panel of liquid crystal display Download PDFInfo
- Publication number
- WO2008021268A1 WO2008021268A1 PCT/US2007/017843 US2007017843W WO2008021268A1 WO 2008021268 A1 WO2008021268 A1 WO 2008021268A1 US 2007017843 W US2007017843 W US 2007017843W WO 2008021268 A1 WO2008021268 A1 WO 2008021268A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- led
- led device
- electric circuit
- diamond
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 39
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 15
- 239000010949 copper Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 24
- 239000000956 alloy Substances 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000013068 control sample Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018131 Al-Mn Inorganic materials 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 229910018464 Al—Mg—Si Inorganic materials 0.000 description 1
- 229910018461 Al—Mn Inorganic materials 0.000 description 1
- 229910018571 Al—Zn—Mg Inorganic materials 0.000 description 1
- 229910018569 Al—Zn—Mg—Cu Inorganic materials 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- 229910017816 Cu—Co Inorganic materials 0.000 description 1
- 229910017813 Cu—Cr Inorganic materials 0.000 description 1
- 229910017827 Cu—Fe Inorganic materials 0.000 description 1
- 229910017824 Cu—Fe—P Inorganic materials 0.000 description 1
- 229910017876 Cu—Ni—Si Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 229910017313 Mo—Co Inorganic materials 0.000 description 1
- 229910017318 Mo—Ni Inorganic materials 0.000 description 1
- 235000015392 Sesbania grandiflora Nutrition 0.000 description 1
- 244000275021 Sesbania grandiflora Species 0.000 description 1
- 229910009038 Sn—P Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- QFXZANXYUCUTQH-UHFFFAOYSA-N ethynol Chemical group OC#C QFXZANXYUCUTQH-UHFFFAOYSA-N 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Definitions
- the present invention relates to a light emitting diode (LED).
- the LED of the present invention can be used for the back panel of liquid crystal display (LCD).
- LCD liquid crystal display
- LED is expected as a light source of the next generation.
- the possible application of LED includes illumination, back light of liquid crystal display, display of instrumental panel of automobile, optical disk, etc.
- LED When LED are used in an electric device, it is necessary to solve the problem caused by heat.
- the temperature of LED chips can significantly increase when supplied with a large amount of power.
- U.S. patent application publication (2005-276052) discloses illumination systems wherein diamond-like carbon (DLC) is disposed for the purpose of heat diffusion on the surface of ceramic such as AIN, GaN or SiC.
- DLC diamond-like carbon
- An object of the invention is to provide a LED device, wherein the substrate of the LED device has high thermal conductivity, the LED device can be produced economically, and the LED device with large area can be easily produced.
- One embodiment of the present invention is a LED device, comprising a substrate comprising a Cu and/or Al; a diamond-like carbon layer disposed on the substrate; an electric circuit formed on the diamond-like carbon layer; and a LED chip mounted on the substrate and electrically connected to the electric circuit.
- Another embodiment of the present invention is a back panel of liquid crystal display, wherein the LED devices is used as a source of light.
- the present invention further provides a method of forming a LED device comprising: providing a substrate comprising a Cu and/or Al; providing a diamond-like carbon layer disposed on the substrate; forming an electric circuit formed on the diamond-like carbon layer; and electrically connecting a LED chip to the electric circuit.
- a substrate made of metal or alloy such as Copper or Aluminum or alloy thereof can be easily produced in low cost. Further, such metal or alloy material has a high thermal conductivity as compared with ceramics. Furthermore, large LED panels can be easily manufactured by using metal or alloy substrate. This effect is very beneficial in terms of display application such as liquid crystal display (LCD), the panel size of which has been continuously increasing.
- LCD liquid crystal display
- a diamond-like carbon is disposed on the surface of the substrate, resulting in higher thermal conductivity due to the effective heat dissipation and conduction by the DLC.
- Fig. 1 is one embodiment of the LED device of the present invention.
- Fig. 2 is another embodiment of the LED device of the present invention.
- Fig. 3 is still another embodiment of the LED device of the present invention.
- the present invention has the advantage of high thermal conductivity, lower cost, and easiness of handling and the ability to be mass produced for large areas by using Al and/or Cu as a substrate and diamond-like carbon (DLC) as a interlayer between the substrate and electric circuit connected to a LED chip.
- Al and/or Cu as a substrate
- DLC diamond-like carbon
- the thermal conductivity of GaN, AIN and SiC are 130 W/m-K, 170-230 W/m-K and 120 W/m-K respectively while the thermal conductivity ofAI and Cu are 150-230 W/m-K and 400 W/m-K respectively.
- metal or alloy plate In general, a production cost for metal or alloy plate is not expensive. This means a lower material cost, resulting in lower device cost for LED device. Because of the mechanical strength of metals and alloys (toughness, not as brittle as ceramics), it's much easier to process metal or alloy substrate such as cutting, hence lower manufacturing cost can be achieved. Also, it is much easier to manufacture metal or alloy substrate in larger scale, where the panel size of ceramics are typically limited to 4.5 inch sq.
- the LED device of the present invention can be manufactured, for example, by providing a substrate comprising Cu and/or Al; forming a DCL layer on the substrate; forming an electric circuit on the DLC layer; forming an electric circuit on the DLC layer; and mounting a LED chip thereon and electrically connecting the LED chip to the electric circuit.
- the substrate of the present invention comprises Cu and/or Al.
- the substrate can be a Al plate, a Cu plate, a Al-containing alloy plate or a Cu-containing alloy plate.
- the conductive substrate can be used in the present invention.
- the surface in the direction of the DLC layer is preferably anodized by oxygen.
- the Al-containing alloy includes, but not limited to, Al-Cu, Al-Mn, Al-Si 1 Al-Mg, Al-Mg-Si, Al-Zn-Mg and Al-Zn-Mg-Cu.
- the Cu-containing alloy includes, but not limited to, Cu-Ni, Cu-Ni-Si, Cu-Sn, Cu-Cr-Zr-Zn, Cu-Fe-P, Cu-Ni-Sn-P, Cu-Mo, Cu-Co, Cu-Fe, Cu-Cr, Cu-Mo-Ni, Cu-Mo-Cr, Cu-Mo-Co, and Cu-Mo-Fe.
- DLC digital light-up LCD
- the DLC with high thermal conductivity is preferably used in terms of efficient heat diffusion.
- JP H10-072285, JP2002-115080, US2005-0260411 may be referred.
- other references can be referred instead of or in addition to these references.
- the DLC layer may be formed with a chemical vapor deposition (CVD) process.
- CVD chemical vapor deposition
- precursor molecules in a gas phase may be dissociated, or activated, by an energy source to form active species, such as reactive radicals, ions, or atoms.
- the CVD process may occur at atmospheric pressure (about 760 Torr) or higher with an energy source that may include a combustion flame source, such as an oxyacetylene torch source or a plasma torch source.
- the plasma torch source may include a Direct Current (DC) plasma arc jet source.
- the CVD process may occur at atmospheric pressure (about 760 Torr) or lower with an energy source that may include a thermal source, such as a hot filament (HF) source.
- a thermal source such as a hot filament (HF) source.
- HF hot filament
- the HF source may include a single filament or multiple filaments.
- the CVD process may occur at atmospheric pressure (about 760 Torr) or lower with an energy source that may include an electron or ion bombardment source, such as an electrical discharge source or a plasma source.
- an energy source that may include an electron or ion bombardment source, such as an electrical discharge source or a plasma source.
- the DLC layer may be formed by other method.
- the DLC layer can be formed by a physical vapor deposition (PVD) process.
- PVD physical vapor deposition
- the condition of the PVD is preferred to be determined based on the desired thickness and physical property of DCL layer.
- Electric circuit can be formed with a conductive metal such as Ag, Cu, Al, etc. Ag is a preferable conductive metal constituting the electric circuit in terms of solder leach resistance.
- the electric circuit can be formed in various ways. The way of forming the electric circuit is not limited in the present invention. Such way includes the application of thick film paste, the transfer of conductive tape, and the electroplating on the preformed base conductive pattern.
- the thick film paste is cured or fired after the paste is applied. For example, the thick film paste is cured at the temperature of less than 300 0 C. Alternatively, the thick film paste is fired at the temperature of more than 300 0 C.
- thick film paste can be used in the present invention.
- thick film paste can be obtained from E. I. du Pont de Nemours and Company.
- the examples of the electroplating include, for example, autocatalytic electroless plating and direct copper plating.
- LED chip is mounted on the aforementioned layer. There are several pattern of mounting.
- Fig. 1 shows one embodiment of the present invention.
- the LED device at Fig. 1 includes a substrate 102, anodized layer 104 formed on the surface of the substrate 102, a DLC layer 106 disposed on the anodized layer 104; an electric circuit 108 formed on the DLC layer 106; a LED chip 110 mounted on the anodized layer 104, and a wire bond 112 electrically connecting the LED chip 110 with the electric circuit 108.
- the LED chip 110 is mounted on the surface of the anodized layer 104. In the case that the anodized layer 104 is not formed, the LED chip is mounted on the surface of the substrate 102.
- Fig. 2 shows another embodiment of the present invention.
- the LED chip 110 is mounted on the surface of the DLC layer 106.
- the heat from LED chip 110 can be efficiently diffused into the DLC layer 106, which has high thermal conductivity.
- Fig. 3 shows still another embodiment of the present invention.
- the LED chip 110 is flip-chip bonded and connected with the electric circuit 108 without using the wire bond.
- Conductive adhesive or solder can be used to attach the LED chip 110 to the electric circuit 108.
- the conductive adhesive includes, but not limited to, a conductive paste including Ag particle, epoxy resin is cited.
- eutectic die-attach As for ways of bonding the LED chip to the substrate, eutectic die-attach, polymer-based adhesive or solder can be used.
- Solder leach resistance is a basic property, which is usually required as far as the circuitry is concerned.
- the experiments were conducted to confirm a LED device of the present invention has a satisfactory solder leach resistant. Specifically, four samples that have satisfactory solder leach resistant were compared with a sample of the present invention.
- a silver paste as a thick film paste was screen-printed to the surface of DLC sheet, thereby forming a prescribed conductive pattern.
- the paste was dried at 150 0 C for 10 minutes, and then cured at 200 0 C for 30 minutes.
- the sample was subsequently gold plated for the purpose of wirebonding.
- the composition of the silver paste and the conductive pattern are shown in Table 1. [Table 1]
- Sample 1 and control sample 2-5 were dipped in 63Sn/37Pb liquid for 5 second. This dipping was repeated until solder leach took place.
- the present invention shows better solder leach resistant than conventional combinations.
- Typical reliability items includes:
- Samples of LED packaged on the claimed circuitry/Substrate will be subjected to reliability tests as well. Additional testing items might include:
- Heat Management Performance Test Samples are tested in such a way that heat management performance of the LED devices using structures claimed in this invention will be compared with those of other commercially available substrates and packaging structure.
- the present invention will show superior heat management performance, including excellent heat conductivity properties, resulting in better device (LED device or end use) quality (i.e., longer life, efficiency of emittance, etc.) as compared with other commercially available substrates and packaging structures.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009524636A JP2010500778A (en) | 2006-08-11 | 2007-08-10 | LED device and liquid crystal display back panel |
EP07811260A EP2050146A1 (en) | 2006-08-11 | 2007-08-10 | Led device and back panel of liquid crystal display |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83702206P | 2006-08-11 | 2006-08-11 | |
US60/837,022 | 2006-08-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008021268A1 true WO2008021268A1 (en) | 2008-02-21 |
Family
ID=38717895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/017843 WO2008021268A1 (en) | 2006-08-11 | 2007-08-10 | Led device and back panel of liquid crystal display |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP2050146A1 (en) |
JP (1) | JP2010500778A (en) |
KR (1) | KR20090040374A (en) |
CN (1) | CN101501873A (en) |
TW (1) | TW200822399A (en) |
WO (1) | WO2008021268A1 (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102460738A (en) * | 2009-05-20 | 2012-05-16 | 英特曼帝克司公司 | Light emitting device |
WO2012100060A2 (en) * | 2011-01-21 | 2012-07-26 | Cree, Inc. | Light emitting diode (led) devices, systems, and methods |
CN102983124A (en) * | 2012-11-14 | 2013-03-20 | 深圳大学 | Light emitting diode (LED) light source with cooling device |
CN103346242A (en) * | 2013-07-05 | 2013-10-09 | 苏州热驰光电科技有限公司 | LED device based on glass substrate and preparation method of LED device |
US8860043B2 (en) | 2009-06-05 | 2014-10-14 | Cree, Inc. | Light emitting device packages, systems and methods |
US8866166B2 (en) | 2009-06-05 | 2014-10-21 | Cree, Inc. | Solid state lighting device |
US8878217B2 (en) | 2010-06-28 | 2014-11-04 | Cree, Inc. | LED package with efficient, isolated thermal path |
US9123874B2 (en) | 2009-01-12 | 2015-09-01 | Cree, Inc. | Light emitting device packages with improved heat transfer |
US9270924B2 (en) | 2010-12-27 | 2016-02-23 | Kabushiki Kaisha Toshiba | Television and electronic apparatus |
US9467641B2 (en) | 2010-12-27 | 2016-10-11 | Kabushiki Kaisha Toshiba | Television and electronic apparatus |
US9859471B2 (en) | 2011-01-31 | 2018-01-02 | Cree, Inc. | High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion |
US11101408B2 (en) | 2011-02-07 | 2021-08-24 | Creeled, Inc. | Components and methods for light emitting diode (LED) lighting |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101887942A (en) * | 2010-06-07 | 2010-11-17 | 江苏鑫钻新材料科技有限公司 | Metal baseplate provided with LED and manufacturing method thereof |
CN102469680A (en) * | 2010-11-05 | 2012-05-23 | 寇崇善 | Circuit board with high thermal conductivity and manufacturing method thereof |
KR101237685B1 (en) * | 2011-03-29 | 2013-02-26 | 삼성전기주식회사 | Heat radiating substrate and method of manufacturing the same |
CN102593294B (en) * | 2012-03-15 | 2016-08-03 | 安徽三安光电有限公司 | Combined type gallium nitride-based semiconductor growth substrates and preparation method thereof |
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JP2001004856A (en) * | 1999-06-24 | 2001-01-12 | Nec Corp | Optical module mounting substrate and its manufacture |
US20040251478A1 (en) * | 2001-01-19 | 2004-12-16 | Chevron U.S.A. Inc. | Diamondoid-containing materials for passivating layers in integrated circuit devices |
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2007
- 2007-08-10 KR KR1020097004952A patent/KR20090040374A/en not_active Application Discontinuation
- 2007-08-10 EP EP07811260A patent/EP2050146A1/en not_active Withdrawn
- 2007-08-10 JP JP2009524636A patent/JP2010500778A/en active Pending
- 2007-08-10 WO PCT/US2007/017843 patent/WO2008021268A1/en active Application Filing
- 2007-08-10 CN CNA2007800295843A patent/CN101501873A/en active Pending
- 2007-08-13 TW TW96129882A patent/TW200822399A/en unknown
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JP2001004856A (en) * | 1999-06-24 | 2001-01-12 | Nec Corp | Optical module mounting substrate and its manufacture |
US20040251478A1 (en) * | 2001-01-19 | 2004-12-16 | Chevron U.S.A. Inc. | Diamondoid-containing materials for passivating layers in integrated circuit devices |
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Also Published As
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EP2050146A1 (en) | 2009-04-22 |
KR20090040374A (en) | 2009-04-23 |
TW200822399A (en) | 2008-05-16 |
JP2010500778A (en) | 2010-01-07 |
CN101501873A (en) | 2009-08-05 |
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