CN108155283A - A kind of ceramic circuit-board preparation method and ceramic circuit harden structure with box dam - Google Patents
A kind of ceramic circuit-board preparation method and ceramic circuit harden structure with box dam Download PDFInfo
- Publication number
- CN108155283A CN108155283A CN201810101415.6A CN201810101415A CN108155283A CN 108155283 A CN108155283 A CN 108155283A CN 201810101415 A CN201810101415 A CN 201810101415A CN 108155283 A CN108155283 A CN 108155283A
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- China
- Prior art keywords
- ceramic circuit
- board
- box dam
- metal bonding
- bonding layer
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- 239000000919 ceramic Substances 0.000 title claims abstract description 84
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000007747 plating Methods 0.000 claims description 21
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910017083 AlN Inorganic materials 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 238000005538 encapsulation Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 6
- 229910000679 solder Inorganic materials 0.000 abstract description 4
- 239000007769 metal material Substances 0.000 description 11
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000011536 re-plating Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
A kind of ceramic circuit-board preparation method and ceramic circuit harden structure with box dam, ceramic circuit-board and box dam are prepared first, then the first metal bonding layer is formed on ceramic circuit-board, the second metal bonding layer is formed on box dam, the first metal bonding layer on ceramic circuit-board is finally contacted into line unit closing operation of going forward side by side with the second metal bonding layer on box dam, forms the ceramic circuit-board with box dam.The present invention has abandoned organic adhesion agent, and it is attached without solder, box dam and ceramic circuit-board are connected by metal bonding layer using bonding techniques, improve adhesion intensity and heat-sinking capability, so as to improve the reliability of encapsulating products, the technology difficulty of encapsulation is reduced, the service life of the chip greatly improved and environment fitness.
Description
Technical field
The present invention relates to a kind of ceramic circuit-board preparation methods and ceramic circuit harden structure with box dam.
Background technology
Light emitting diode（Light Emitting Diode, LED）It is that a kind of can convert electrical energy into the solid of light
Semiconductor devices is widely used in display screen, traffic signal, display light source, lamps for vehicle, LED backlights and illumination light
The fields such as source.
LED encapsulation modules generally comprise ceramic circuit-board and the LED chip being arranged on ceramic circuit-board in light-emitting zone,
In order to realize better air-tightness, box dam is usually provided with around the light-emitting zone of ceramic circuit-board, then utilizes box dam shape
Into space, fluorescent colloid is coated in the light-emitting zone in box dam, completes LED encapsulation.
Majority technique is to form box dam using box dam glue at present, and box dam glue uses organic adhesion agent, and the time has been grown can be old
It melts and splits, and the heat dissipation performance of box dam glue is poor, poor air-tightness, intensity is low, and anti-uv-ray is weak, leads to the reliable of encapsulating products
Property reduce, environment fitness declines to a great extent.
Invention content
The present invention provides a kind of ceramic circuit-board preparation method and ceramic circuit harden structure with box dam, has abandoned organic viscous
Even agent, and be attached without solder, box dam and ceramic circuit-board are connected by metal bonding layer using bonding techniques, improved
Adhesion intensity and heat-sinking capability, so as to improve the reliability of encapsulating products, reduce the technology difficulty of encapsulation, greatly improve
The service life of chip and environment fitness.
In order to achieve the above object, the present invention provides a kind of ceramic circuit-board preparation method with box dam, includes following step
Suddenly：
Step S1, ceramic circuit-board and box dam are prepared；
Step S2, the first metal bonding layer is formed on ceramic circuit-board, the second metal bonding layer is formed on box dam；
Step S3, the first metal bonding layer on ceramic circuit-board is contacted into line unit of going forward side by side with the second metal bonding layer on box dam
Closing operation forms the ceramic circuit-board with box dam.
The pressure of the bonding operation is the Kg of 50Kg~7000, and the temperature of bonding operation is 200 DEG C~800 DEG C.
First metal bonding layer and the position of the second metal bonding layer correspond matching.
First metal bonding layer and the second metal bonding layer using Au, Sn, Ti, Ni, Pt, Ag, W, AuSn,
Any one in PdIn, In material or a variety of combinations.
First metal bonding layer and the thickness of the second metal bonding layer are 10nm~10um.
Using any one mode in plating, chemical plating, evaporation plating, magnetron sputtering or the combination of various ways come shape
Into the first metal bonding layer and the second metal bonding layer.
The ceramic circuit-board uses aluminium nitride ceramics wiring board or aluminium oxide pottery under DPC, DBC, AMB technique
Porcelain wiring board or silicon nitride ceramics wiring board.
The box dam uses metal material or ceramic material.
The present invention also provides a kind of ceramic circuit harden structure with box dam, comprising：
Ceramic circuit-board；
Box dam；
First metal bonding layer, is arranged on ceramic circuit-board；
Second metal bonding layer, is arranged on box dam, and is bonded and is bound up with the first metal bonding layer.
The present invention has abandoned organic adhesion agent, and is attached without solder, passes through metal bonding layer using bonding techniques
Box dam and ceramic circuit-board are connected, improves adhesion intensity and heat-sinking capability, so as to improving the reliability of encapsulating products, drop
The technology difficulty of low encapsulation, the service life of the chip greatly improved and environment fitness.
Description of the drawings
Fig. 1 is a kind of flow chart of ceramic circuit-board preparation method with box dam provided by the invention.
Fig. 2~Fig. 4 is that a kind of technological process section view of ceramic circuit-board preparation method with box dam provided by the invention is shown
It is intended to.
Fig. 5 is a kind of sectional view of another realization method of ceramic circuit-board with box dam provided by the invention.
Fig. 6 is a kind of vertical view of embodiment of box dam.
Fig. 7 is the vertical view of another embodiment of box dam.
Fig. 8 is the vertical view of the box dam after the second bonded layer of formation in one embodiment.
Fig. 9 is the vertical view of the box dam after the second bonded layer of formation in another embodiment.
Specific embodiment
Below according to Fig. 1~Fig. 9, presently preferred embodiments of the present invention is illustrated.
As shown in Figure 1, the present invention provides a kind of ceramic circuit-board preparation method with box dam, be prepared with box dam
Ceramic circuit-board can be used for LED encapsulation modules, can also be applied to other chip encapsulation modules.
A kind of ceramic circuit-board preparation method with box dam specifically comprises the steps of：
Step S1, ceramic circuit-board and box dam are prepared；
Step S2, as shown in Fig. 2, the designated position on 1 surface of ceramic circuit-board forms the first bonded layer 3, as shown in figure 3,
Designated position on 2 surface of box dam forms the second bonded layer 4；
Step S3, as shown in figure 4, the first bonded layer 3 on ceramic circuit-board 1 is contacted simultaneously with the second bonded layer 4 on box dam 2
It is bonded, forms hermetically sealed high heat dissipation box dam ceramic circuit-board.
The ceramic circuit-board uses DPC（Direct copper plating ceramic substrate）Technique or DBC（Cover copper ceramic substrate）Work
Skill or AMB（Active metal brazing substrate）Aluminium nitride ceramics wiring board or aluminium oxide ceramics wiring board under technique or
Person's silicon nitride ceramics wiring board.
The box dam uses metal material（Such as copper alloy etc.）Or ceramic material（Such as aluminium nitride ceramics etc.）, to keep away
Exempt from a series of defects come using box dam adhesive tape.
The box dam is prepared using cast shaping process or processing and forming technology.
Fence annular of the shape of the box dam for arbitrary shape, it is more to use rectangular annular（As shown in Figure 6）Or
Circular ring shape（As shown in Figure 7）.
First bonded layer 3 use metal material, the metal material be Au, Sn, Ti, Ni, Pt, Ag, W, AuSn,
Any one in PdIn, In material or a variety of combinations, wherein, AuSn alloys are more conducive to be bonded molding.
Using any one mode in plating, chemical plating, evaporation plating, magnetron sputtering or the combination of various ways come shape
Into the first bonded layer 3, if the first bonded layer 3 is the combination of various metals material, the combination that various ways may be used comes
Form the first bonded layer 3, such as one layer of metal of the other one layer of metal of one layer of metal re-plating of first chemical plating or first magnetron sputtering
The other one layer of metal of re-plating.
The position of second bonded layer 4 is corresponding with the position of the first bonded layer 3 on ceramic circuit-board 1, so as to
Carry out subsequent bonding operation.
Second bonded layer 4 use metal material, the metal material be Au, Sn, Ti, Ni, Pt, Ag, W, AuSn,
Any one in PdIn, In material or a variety of combinations.
Using any one mode in plating, chemical plating, evaporation plating, magnetron sputtering or the combination of various ways come shape
Into the second bonded layer 4, if the and bonded layer 4 be various metals material combination, the combination that various ways may be used comes
Form the and bonded layer 4, such as one layer of metal of the other one layer of metal of one layer of metal re-plating of first chemical plating or first magnetron sputtering
The other one layer of metal of re-plating.
In order to ensure good bonding effect, the thickness of the first bonded layer 3 and the second bonded layer 4 remain 10nm~
10um。
It the installation position of first bonded layer 3 and the second bonded layer 4 can be there are many selection, subject to bonding operation.
As shown in Fig. 8 and Fig. 4, continuous second bonded layer 4 can be formed at the inside edge of box dam 2 and at outer edge, and in ceramics
The corresponding position of wiring board forms the first bonded layer 3 for having same shape and size with the second bonded layer 4, makes the first bonding
3 and second bonded layer 4 of layer matches, and bonding is bound up.Alternatively, as shown in Fig. 9 and Fig. 5, formation can be spaced on box dam 2
Second bonded layer 4 of multiple strips, and formed in the corresponding position of ceramic circuit-board with the second bonded layer 4 with same shape
With the first bonded layer 3 of size, match the first bonded layer 3 and the second bonded layer 4, bonding is bound up.It or can be with
The second bonded layer 4 is formed on all surfaces of box dam 2, and is formed and the second bonded layer in the corresponding position of ceramic circuit-board
4 have the first bonded layer 3 of same shape and size, match the first bonded layer 3 and the second bonded layer 4, and bonding is bound up on one
It rises.
The pressure of the bonding operation is the Kg of 50Kg~7000；The temperature of bonding operation is 200 DEG C~800 DEG C,
In, 230 DEG C and 410 DEG C are preferred temperatures.
In a preferred embodiment of the present invention, the material of the first bonded layer 3 and the second bonded layer 4 preferably uses AuSn
Alloy, the temperature of bonding operation is 500 DEG C, and pressure is 500 Kg, can obtain good bonding effect.
The first bonded layer 3 and the second bonded layer 4 are combined together using molecular separating force, using bonding techniques make box dam with
Adhesion intensity between ceramic circuit-board is stronger, and compactness is more preferable, and heat-sinking capability is more preferable.
As shown in Figure 4 and Figure 5, the present invention also provides a kind of ceramic circuit harden structure with box dam, comprising：
Ceramic circuit-board 1；
Box dam 2；
First bonded layer 3, is arranged on ceramic circuit-board 1；
Second bonded layer 4, is arranged on box dam 2, and is bonded and is bound up with the first bonded layer 3.
The ceramic circuit-board 1 is using the aluminium nitride ceramics wiring board under DPC, DBC, AMB technique or aluminium oxide pottery
Porcelain wiring board or silicon nitride ceramics wiring board.
The box dam 2 uses metal material or ceramic material.
Fence annular of the shape of the box dam 2 for arbitrary shape, it is more to use rectangular annular（As shown in Figure 6）Or
Person's circular ring shape（As shown in Figure 7）.
First bonded layer 3 use metal material, the metal material be Au, Sn, Ti, Ni, Pt, Ag, W, AuSn,
Any one in PdIn, In material or a variety of combinations.
Using any one mode in plating, chemical plating, evaporation plating, magnetron sputtering or the combination of various ways come shape
Into the first bonded layer 3.
The position of second bonded layer 4 is corresponding with the position of the first bonded layer 3 on ceramic circuit-board 1, so as to
Carry out subsequent bonding operation.
Second bonded layer 4 use metal material, the metal material be Au, Sn, Ti, Ni, Pt, Ag, W, AuSn,
Any one in PdIn, In material or a variety of combinations.
Using any one mode in plating, chemical plating, evaporation plating, magnetron sputtering or the combination of various ways come shape
Into the second bonded layer 4.
In order to ensure good bonding effect, the thickness of the first bonded layer 3 and the second bonded layer 4 remain 10nm~
10um。
It the installation position of first bonded layer 3 and the second bonded layer 4 can be there are many selection, subject to bonding operation.
As shown in Fig. 8 and Fig. 4, continuous second bonded layer 4 can be formed at the inside edge of box dam 2 and at outer edge, and in ceramics
The corresponding position of wiring board forms the first bonded layer 3 for having same shape and size with the second bonded layer 4, makes the first bonding
3 and second bonded layer 4 of layer matches, and bonding is bound up.Alternatively, as shown in Fig. 9 and Fig. 5, formation can be spaced on box dam 2
Second bonded layer 4 of multiple strips, and formed in the corresponding position of ceramic circuit-board with the second bonded layer 4 with same shape
With the first bonded layer 3 of size, match the first bonded layer 3 and the second bonded layer 4, bonding is bound up.It or can be with
The second bonded layer 4 is formed on all surfaces of box dam 2, and is formed and the second bonded layer in the corresponding position of ceramic circuit-board
4 have the first bonded layer 3 of same shape and size, match the first bonded layer 3 and the second bonded layer 4, and bonding is bound up on one
It rises.
The present invention is prepared for a kind of ceramic circuit-board with box dam, has abandoned organic adhesion agent, and connected without solder
It connects, box dam and ceramic circuit-board is connected by metal bonding layer using bonding techniques, improve adhesion intensity and heat-sinking capability,
So as to improve the reliability of encapsulating products, the technology difficulty of encapsulation is reduced, the service life and ring of the chip greatly improved
Border fitness.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (9)
1. a kind of ceramic circuit-board preparation method with box dam, which is characterized in that comprise the steps of：
Step S1, ceramic circuit-board and box dam are prepared；
Step S2, the first metal bonding layer is formed on ceramic circuit-board, the second metal bonding layer is formed on box dam；
Step S3, the first metal bonding layer on ceramic circuit-board is contacted into line unit of going forward side by side with the second metal bonding layer on box dam
Closing operation forms the ceramic circuit-board with box dam.
2. the ceramic circuit-board preparation method with box dam as described in claim 1, which is characterized in that the bonding operation
Pressure is the Kg of 50Kg~7000, and the temperature of bonding operation is 200 DEG C~800 DEG C.
3. the ceramic circuit-board preparation method with box dam as described in claim 1, which is characterized in that first metallic bond
The position for closing layer and the second metal bonding layer corresponds matching.
4. the ceramic circuit-board preparation method with box dam as described in claim 1, which is characterized in that first metallic bond
Close layer and the second metal bonding layer using any one in Au, Sn, Ti, Ni, Pt, Ag, W, AuSn, PdIn, In material or
A variety of combinations.
5. the ceramic circuit-board preparation method with box dam as described in claim 1, which is characterized in that first metallic bond
The thickness for closing layer and the second metal bonding layer is 10nm~10um.
6. the ceramic circuit-board preparation method with box dam as described in claim 1, which is characterized in that using plating, chemical plating,
The combination of plating, any one mode in magnetron sputtering or various ways is evaporated to form the first metal bonding layer and the second gold medal
Belong to bonded layer.
7. the ceramic circuit-board preparation method with box dam as described in claim 1, which is characterized in that the ceramic circuit-board
Using the aluminium nitride ceramics wiring board under DPC, DBC, AMB technique either aluminium oxide ceramics wiring board or silicon nitride ceramics line
Road plate.
8. the ceramic circuit-board preparation method with box dam as described in claim 1, which is characterized in that the box dam is using gold
Belong to material or ceramic material.
9. a kind of pass through the obtained ceramic circuit-board with box dam of the preparation method as described in any one in claim 1-8
Structure, which is characterized in that include：
Ceramic circuit-board；
Box dam；
First metal bonding layer, is arranged on ceramic circuit-board；
Second metal bonding layer, is arranged on box dam, and is bonded and is bound up with the first metal bonding layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810101415.6A CN108155283A (en) | 2018-02-01 | 2018-02-01 | A kind of ceramic circuit-board preparation method and ceramic circuit harden structure with box dam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810101415.6A CN108155283A (en) | 2018-02-01 | 2018-02-01 | A kind of ceramic circuit-board preparation method and ceramic circuit harden structure with box dam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108155283A true CN108155283A (en) | 2018-06-12 |
Family
ID=62459452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810101415.6A Pending CN108155283A (en) | 2018-02-01 | 2018-02-01 | A kind of ceramic circuit-board preparation method and ceramic circuit harden structure with box dam |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108155283A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860161A (en) * | 2018-11-06 | 2019-06-07 | 惠州市华星光电技术有限公司 | The preparation method and display device of display component, display component |
| CN111613710A (en) * | 2020-06-29 | 2020-09-01 | 松山湖材料实验室 | Electronic equipment, semiconductor device, packaging structure, support and manufacturing method thereof |
| CN111745245A (en) * | 2020-05-14 | 2020-10-09 | 山西华微紫外半导体科技有限公司 | Eutectic welding method for upper box dam of silicon nitride ceramic substrate |
| CN112670250A (en) * | 2020-12-25 | 2021-04-16 | 广东先导稀材股份有限公司 | Manufacturing method of infrared detector module |
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| CN106848043A (en) * | 2017-03-28 | 2017-06-13 | 光创空间（深圳）技术有限公司 | The method for packing and LED component of a kind of LED component |
| CN107527978A (en) * | 2017-08-15 | 2017-12-29 | 江苏稳润光电科技有限公司 | A kind of high-power ultraviolet LED Vacuum Package device and its manufacture method |
| CN208093589U (en) * | 2018-02-01 | 2018-11-13 | 赛创电气（铜陵）有限公司 | A kind of ceramic circuit harden structure with box dam |
-
2018
- 2018-02-01 CN CN201810101415.6A patent/CN108155283A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106848043A (en) * | 2017-03-28 | 2017-06-13 | 光创空间（深圳）技术有限公司 | The method for packing and LED component of a kind of LED component |
| CN107527978A (en) * | 2017-08-15 | 2017-12-29 | 江苏稳润光电科技有限公司 | A kind of high-power ultraviolet LED Vacuum Package device and its manufacture method |
| CN208093589U (en) * | 2018-02-01 | 2018-11-13 | 赛创电气（铜陵）有限公司 | A kind of ceramic circuit harden structure with box dam |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860161A (en) * | 2018-11-06 | 2019-06-07 | 惠州市华星光电技术有限公司 | The preparation method and display device of display component, display component |
| CN109860161B (en) * | 2018-11-06 | 2020-12-25 | 惠州市华星光电技术有限公司 | Display assembly, preparation method of display assembly and display device |
| CN111745245A (en) * | 2020-05-14 | 2020-10-09 | 山西华微紫外半导体科技有限公司 | Eutectic welding method for upper box dam of silicon nitride ceramic substrate |
| CN111613710A (en) * | 2020-06-29 | 2020-09-01 | 松山湖材料实验室 | Electronic equipment, semiconductor device, packaging structure, support and manufacturing method thereof |
| CN112670250A (en) * | 2020-12-25 | 2021-04-16 | 广东先导稀材股份有限公司 | Manufacturing method of infrared detector module |
| CN112670250B (en) * | 2020-12-25 | 2022-04-08 | 东莞先导先进科技有限公司 | Manufacturing method of infrared detector module |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180612 |
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