KR20140109078A - LED Package and Method of manufacturing the same - Google Patents
LED Package and Method of manufacturing the same Download PDFInfo
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- KR20140109078A KR20140109078A KR1020130023296A KR20130023296A KR20140109078A KR 20140109078 A KR20140109078 A KR 20140109078A KR 1020130023296 A KR1020130023296 A KR 1020130023296A KR 20130023296 A KR20130023296 A KR 20130023296A KR 20140109078 A KR20140109078 A KR 20140109078A
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- South Korea
- Prior art keywords
- light emitting
- emitting diode
- insulating
- bonding
- sacrificial
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 230000017525 heat dissipation Effects 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000000853 adhesive Substances 0.000 claims abstract description 18
- 230000001070 adhesive effect Effects 0.000 claims abstract description 18
- 238000005219 brazing Methods 0.000 claims description 40
- 239000000945 filler Substances 0.000 claims description 39
- 238000007747 plating Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 27
- 239000010949 copper Substances 0.000 claims description 26
- 238000009413 insulation Methods 0.000 claims description 25
- 239000010410 layer Substances 0.000 claims description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 22
- 239000010936 titanium Substances 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 239000012671 ceramic insulating material Substances 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 238000007740 vapor deposition Methods 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000002356 single layer Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
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- 238000001704 evaporation Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
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- 229910000881 Cu alloy Inorganic materials 0.000 description 1
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- 239000011888 foil Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
A light emitting diode package and a method of manufacturing the same include a light emitting portion having a light emitting diode and a pattern portion in which the light emitting diode is mounted so that the light emitting diode is electrically connected thereto; A heat dissipation unit disposed below the light emitting unit to emit heat generated from the light emitting diode to the outside; An insulating portion disposed between the pattern portion and the heat dissipating portion to insulate the pattern portion from the heat dissipating portion, the insulating portion being made of a material having a thermal conductivity lower than that of the heat dissipating portion; And an adhesive portion which is disposed between the heat dissipating portion and the insulating portion so that the heat dissipating portion and the insulating portion are adhered to each other and is made of a material having a thermal conductivity lower than that of the heat dissipating portion and higher than that of the insulating portion.
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting diode package, and more particularly, to a light emitting diode package capable of improving heat dissipation efficiency and a manufacturing method thereof.
BACKGROUND OF THE INVENTION [0002] Light emitting diode packages, especially multi-chip light emitting diode packages, have a structure mainly based on a metal core printed circuit board (MCPCB). That is, a heat dissipation unit serving as a heat dissipation substrate made of a metal, an insulation unit or a bonding unit comprising an epoxy or a heat dissipation tape arranged on the heat dissipation unit so as to isolate the heat dissipation unit from the light emitting diode, And a light emitting diode. The light emitting diode disposed on the insulating part or the bonding part has a pattern part in which the light emitting diode is mounted so that the light emitting diode is electrically connected.
The light emitting diode package mentioned above may have a heat transfer path for passing heat of high temperature generated from the light emitting diode through an insulating portion or a bonding portion to the heat emitting portion. In the case of the light emitting diode package described above, since the heat radiating portion is made of a metal material, the heat radiating portion itself can have a high thermal conductivity.
However, in the light emitting diode package mentioned above, even though the heat radiation portion has a high thermal conductivity, the heat radiation is not efficiently performed. This is because the thermal conductivity of the insulating portion or the bonding portion for transferring the heat of high temperature generated from the light emitting diode to the heat dissipating portion is very low, and efficient heat dissipation is hardly obtained. In fact, the heat-dissipating portion mentioned may have a thermal conductivity of about 200 to 400 W / mK, whereas the insulating or adhesive portion has a thermal conductivity of about 0.1 to 5 W / mK, so that the insulating portion or the bonding portion hinders high-temperature heat dissipation.
Although the conventional light emitting diode package has a heat dissipation portion having a high thermal conductivity, the heat dissipation of the light emitting diode package is not efficiently performed because the insulation portion or the adhesion portion hinders high temperature heat dissipation, There is a problem that the lifetime of the package itself is reduced.
In order to increase the thermal conductivity of the light emitting diode package, it is possible to induce heat emission at a high temperature by directly bonding the insulating portion and the heat dissipating portion. However, since there is a large difference in thermal expansion coefficient between the insulating portion and the heat dissipating portion, There is a problem that bending occurs in the insulating portion and the heat dissipating portion.
SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting diode package for efficiently discharging high-temperature heat generated from a light emitting diode to a heat dissipation unit.
Another object of the present invention is to provide a method of manufacturing a light emitting diode package that can adhere an insulating portion and a heat dissipating portion using a material having excellent heat transfer characteristics.
According to an aspect of the present invention, there is provided a light emitting diode package including: a light emitting unit having a light emitting diode and a pattern unit on which the light emitting diode is mounted so that the light emitting diode is electrically connected; A heat dissipation unit disposed below the light emitting unit to emit heat generated from the light emitting diode to the outside; An insulating portion disposed between the pattern portion and the heat dissipating portion to insulate the pattern portion from the heat dissipating portion, the insulating portion being made of a material having a thermal conductivity lower than that of the heat dissipating portion; And an adhesive portion which is disposed between the heat dissipating portion and the insulating portion so that the heat dissipating portion and the insulating portion are adhered to each other and is made of a material having a thermal conductivity lower than that of the heat dissipating portion and higher than that of the insulating portion.
The light emitting diode package according to an embodiment of the present invention may have a vertically stacked structure of an insulating portion, a bonding portion, and a heat dissipating portion, and may be made of a material having a higher thermal conductivity in the order of an insulating portion, .
In the light emitting diode package according to an embodiment of the present invention, the insulating portion may have a thermal conductivity of 30 to 200 W / mK, the bonding portion may have a thermal conductivity of 100 to 300 W / mK, It may have a thermal conductivity of 500 W / mK.
In the light emitting diode package according to an embodiment of the present invention, the insulating portion may be formed of a ceramic insulating material.
In the light emitting diode package according to an embodiment of the present invention, the bonding portion may have a single layer structure of a brazing filler bonding portion, or may have a multilayer structure in which a brazing filler bonding portion, a plating portion, and a vapor deposition portion are sequentially laminated Lt; / RTI >
In the light emitting diode package according to an embodiment of the present invention, the brazing filler of the bonding portion may include at least one selected from the group consisting of silver (Ag), copper (Cu), and aluminum (Al) When the single-layer structure is used, it may further include titanium (Ti).
In the light emitting diode package according to an embodiment of the present invention, the brazing filler of the bonding portion may be formed in a reducing gas atmosphere or a vacuum atmosphere of 1 10 -5 to 1 10 -7 Torr.
In the light emitting diode package according to an embodiment of the present invention, the heat dissipation unit may be made of copper, aluminum, or a mixture thereof.
According to an aspect of the present invention, there is provided a method of fabricating a light emitting diode package, the method including: providing an insulating portion and a sacrificial insulating portion, each having the conductive layer on one surface thereof and made of the same material; A bonding portion including a brazing filler joint portion made of a material having a thermal conductivity higher than that of the insulating portion in each of the other side of the insulating portion and the other side of the sacrificial insulation portion facing each other, and a sacrificial bonding portion made of the same material as the brazing filler joint portion And disposing a heat dissipation unit having a thermal conductivity higher than that of the adhering unit between the adhering unit and the sacrifice adhering unit; Bonding the insulating portion and the sacrificial insulating portion to the heat dissipating portion using the adhesive portion and the sacrificial bonding portion; Removing the sacrificial insulation portion and the sacrificial adhesion portion; And mounting the light emitting diode on the conductive layer so as to be electrically connected to the conductive layer.
In the method of manufacturing a light emitting diode package according to an embodiment of the present invention, each of the insulating portion and the sacrificial insulating portion has a thermal conductivity of 30 to 200 W / mK, and each of the bonding portion and the sacrificial bonding portion is 100 to 300 W / mK, and the heat dissipation unit may have a thermal conductivity of 200 to 500 W / mK.
In the method of manufacturing a light emitting diode package according to an embodiment of the present invention, each of the insulating portion and the sacrificial insulating portion may be formed of a ceramic insulating material.
In the method of manufacturing a light emitting diode package according to an embodiment of the present invention, each of the bonding portion and the sacrificial bonding portion may include silver (Ag), copper (Cu), and titanium (Ti).
In the method of manufacturing a light emitting diode package according to an embodiment of the present invention, the heat dissipating unit may be made of copper, aluminum, or a mixture thereof.
In the method of manufacturing a light emitting diode package according to an embodiment of the present invention, the step of bonding the insulating portion and the sacrificial insulating portion to the heat dissipating portion may be performed in a reducing gas atmosphere or in the range of 1 10 -5 to 1 10 -7 Torr Lt; / RTI > atmosphere.
In the method of manufacturing a light emitting diode package according to an embodiment of the present invention, a multilayer structure bonding portion including an evaporation portion and a plating portion on the other surface of the insulating portion and the other surfaces of the sacrificial insulation portion, And forming a sacrificial adhesion portion of a multi-layer structure including a deposition portion made of a material and a plating portion.
As described above, the light emitting diode package of the present invention has a vertical connection structure of an insulating portion, a bonding portion, and a heat dissipating portion below a light emitting portion having a light emitting diode. Particularly, the light emitting diode package of the present invention has a vertical connection structure composed of a material having a higher thermal conductivity in the order of the insulating portion, the bonding portion, and the heat dissipating portion.
Therefore, the light emitting diode package of the present invention can efficiently discharge the heat of high temperature generated from the light emitting diode to the heat dissipating unit.
Accordingly, the light emitting diode package of the present invention can reduce the deterioration of the light emitting diode itself by improving the heat dissipation property, thereby greatly improving the lifetime of the light emitting diode.
In addition, since the structure of the light emitting diode package of the present invention can improve the heat radiation characteristic as mentioned above, not only a single chip LED package in which a single light emitting diode is mounted in a pattern portion but also a plurality of light emitting diodes It can be more easily applied to a multi-chip light emitting diode package.
In addition, the light emitting diode package of the present invention is manufactured by using the bonding part including the brazing filler bonding part and the sacrifice bonding part, so that the insulating part and the heat radiation part can be more easily bonded without occurrence of banding.
Accordingly, the light emitting diode package of the present invention has a structure in which a bonding portion including a brazing filler bonding portion is disposed between an insulating portion and a heat dissipating portion, and as described above, a material that increases the thermal conductivity of the insulating portion, And as a result, the high-temperature heat generated from the light-emitting diode can be efficiently discharged to the heat-radiating portion.
1 is a schematic cross-sectional view illustrating a light emitting diode package according to a first embodiment of the present invention.
2 is a schematic cross-sectional view illustrating a light emitting diode package according to a second embodiment of the present invention.
3 to 5 are sectional views for explaining a method of manufacturing the light emitting diode package of FIG.
6 is a cross-sectional view illustrating a method of manufacturing the light emitting diode package of FIG.
7 is a photograph showing the temperature of the light emitting diode in the light emitting diode package according to the second embodiment of the present invention.
8 is a photograph showing the temperature of a light emitting diode in a conventional light emitting diode package.
While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments. It is to be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but on the contrary, is intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing. The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the term "comprises" or "comprising ", etc. is intended to specify that there is a stated feature, figure, step, operation, component, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.
Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.
Hereinafter, a light emitting diode package according to embodiments of the present invention will be described.
The light emitting diode package of the present invention may have a vertical connection structure in which a light emitting portion, an insulating portion, a bonding portion, and a heat radiating portion are arranged from the top to the bottom.
The light emitting portion may include a light emitting diode. The light emitting portion may include a pattern portion on which the light emitting diode is mounted. That is, the light emitting portion may include a pattern portion that is mounted so that the light emitting diode and the light emitting diode are electrically connected to each other.
Here, a single light emitting diode may be mounted, or a plurality of light emitting diodes may be mounted. In the case where the light emitting diode is mounted in a single unit, the light emitting diode package of the present invention can be expressed as a single chip light emitting diode package. When the light emitting diode package is mounted in a plurality of units, the light emitting diode package of the present invention can be expressed as a multi chip light emitting diode package have. In particular, since the light emitting diode package of the present invention can efficiently discharge the high-temperature heat generated from the light emitting diode to the heat dissipation unit, the light emitting diode package can be more easily applied to a multi-chip light emitting diode package having high output and high density.
In fact, in the case of the light emitting diode package of the present invention, it is possible to realize a multi-chip light emitting diode package having a high output and a high efficiency of 20 W or more. As described above, since the light emitting unit having a plurality of light emitting diodes can be mounted on the insulation unit having a single structure, it is possible to realize a multi chip light emitting diode package having a high output in a narrow area.
Further, the pattern part may have an array pattern when a plurality of light emitting diodes are mounted, and may be obtained by performing a screen printing process mainly using a plating process or a conductive paste. The reason why the pattern portion is obtained by the plating process or the screen printing process is that the material properties of the insulating portion are taken into account. That is, a pattern portion using an insulating portion made of a ceramic insulating material as a base material can be obtained more easily than when performing a plating process or a screen printing process. The plating process can be achieved by plating a nickel, copper, silver, gold, or the like based on a sputter thin film pattern of titanium, copper, nickel, chromium or gold, and the screen printing process can be performed by using a tungsten, molybdenum, Manganese, silver, copper, and the like.
In addition, the above-mentioned pattern portion can be formed to have a thickness of about 1 to 300 mu m. Since the above-mentioned pattern portion can be formed as a thin film having a fine structure on the insulating portion, a multi-chip diode package having high density and high output can be realized, and a uniform luminous efficiency can be obtained even at a low current.
The insulating portion may be provided to insulate the pattern portion of the light emitting portion and the heat dissipating portion. That is, the insulating portion may be disposed between the lower portion of the pattern portion of the light emitting portion and the upper portion of the heat dissipating portion.
When the insulating part has a thermal conductivity of less than about 30 W / mK, the thermal conductivity of the insulating part is low, which is not preferable because heat efficiency is not good. When the thermal conductivity is more than about 200 W / mK, It is not preferable because the range of selection for the material of each of the adhering portion and the heat dissipating portion to have a thermal conductivity becomes narrow. Therefore, the insulating portion in the present invention can have a thermal conductivity of about 30 to 200 W / mK. Thus, the above-mentioned insulating portion may be made of a ceramic insulating material. Examples of the ceramic insulating material that can be used as the insulating portion include alumina (Al 2 O 3 ), aluminum nitride (AlN), and the like.
In addition, when the above-mentioned insulation portion has a thickness of less than about 200 탆, the thermal conductivity of the insulation portion itself is low and the heat dissipation efficiency is not good. Therefore, when the insulation portion has a thickness of more than about 1,000 탆, It is not preferable because the route becomes long. Therefore, the insulating part in the present invention can be formed to have a thickness of about 200 to 1,000 mu m.
As described above, the light emitting diode package of the present invention is provided with the insulating part made of the ceramic insulating material, so that more efficient heat emission can be achieved.
The adhering portion may be provided to adhere the insulating portion and the heat dissipating portion. Accordingly, the adhering portion may be disposed between the lower portion of the insulating portion and the upper portion of the heat-radiating portion. As described above, the light emitting diode package of the present invention may include a bonding portion for bonding the insulating portion and the heat radiating portion to the upper portion and the lower portion.
Since the adhesive portion is provided at the lower portion of the insulating portion, it has a disposition structure that receives heat emitted from the insulating portion when the heat transfer path is referred to. Here, if the bonding portion has a lower thermal conductivity than the insulating portion, the heat emission efficiency may be lowered. Therefore, it is preferable that the bonding portion has a higher thermal conductivity than the insulating portion in consideration of the heat emission efficiency.
When the above-mentioned bonding portion has a thermal conductivity of less than about 100 W / mK, it is not preferable because it can have a relatively low thermal conductivity than that of the upper insulating portion. When the thermal conductivity is higher than about 300 W / mK, The width of selection of the material of the heat-radiating portion which should have a narrow width is not preferable. Accordingly, the bonding portion in the light emitting diode package of the present invention may have a thermal conductivity of about 100 to 300 W / mK. Accordingly, the bonding portion may be formed of a brazing filler joint. Particularly, the bonding portion may have a single-layer structure of the brazing filler joint or may have a multilayer structure in which a brazing filter, a plating portion, and a deposition portion are sequentially stacked. Here, in the case where the above-mentioned joint portion has a multi-layer structure, the brazing filler joint portion, the plating portion, and the deposition portion may be sequentially stacked on the heat dissipating portion.
Particularly, in the light emitting diode package of the present invention, since the bonding portion has a higher thermal conductivity than the insulating portion as mentioned above, it can be mainly made of a metal material. The brazing filler joint of the above-mentioned bonding portion may include silver, copper, aluminum, tin, zinc, nickel and the like. These may be used alone or in combination of two or more. In addition, when the bonding portion of the brazed pillar bonding portion has a single-layer structure, the bonding portion may further include titanium to bond the insulating portion and the heat dissipating portion.
When the bonding portion is formed of a single layer structure of the brazing filler joint, it can be applied to a foil type or paste type having a thickness of less than about 200 mu m made of a metal material including titanium mentioned above. Thus, the above-mentioned bonding portion can be formed to have a thickness of less than about 200 탆 when having a single layer structure of the brazing filler joint. In addition, when the above-mentioned bonding portion is formed to have a thickness of less than about 50 탆, the efficiency due to heat emission is not good, which is not preferable. Therefore, the above-mentioned bonding portion can be formed to have a thickness of about 50 to 200 mu m.
When the bonding portion has a multilayer structure in which a brazing filler joint portion, a plating portion, and a vapor deposition portion are sequentially stacked as described above, a plating process based on a sputter thin film pattern or a screen printing process using a conductive paste is performed, A deposition part and a plating part are formed on the lower part, and then a brazing filler bonding part is adhered between the plating part and the heat radiation part. Here, the vapor deposition portion of the adhering portion and the plating portion can be obtained by performing the same plating process or screen printing process as forming the pattern portion of the above-mentioned light emitting portion except for having a pattern. In addition, the vapor deposition unit and the plating unit may be formed to have a thickness of about 1 to 300 mu m in the same manner as the pattern unit.
Particularly, the brazing filler joint of the above-mentioned bonding portion can be obtained by carrying out the process under a reducing gas atmosphere or a vacuum atmosphere of 1 10 -5 to 1 10 -3 Torr. Examples of the reducing gas mentioned above include hydrogen, nitrogen, and argon gas. Further, the process for obtaining the brazing filler joint of the above-mentioned bonding portion can be carried out under a temperature atmosphere of about 500 to 900 占 폚.
As described above, the light emitting diode package of the present invention includes the insulating portion formed of the ceramic insulating material having a high thermal conductivity, and the bonding portion having the thermal conductivity higher than that of the insulating portion when the heat transfer path is referred to, Lt; / RTI >
The heat dissipating unit may be provided to be disposed below the adhesive portion. Accordingly, the light emitting diode package of the present invention may have a structure in which the light emitting portion, the insulating portion, the bonding portion, and the heat dissipating portion are arranged vertically. Here, the above-mentioned heat dissipation unit is a heat dissipation substrate and is provided at a lower portion of the adhering unit, so that it has a disposition structure for receiving heat emitted from the adhering unit when the heat transfer path is referred to. Here, if the heat radiating portion has a thermal conductivity lower than that of the bonding portion, the heat radiating efficiency may be lowered. Accordingly, it is preferable that the heat radiation portion has a higher thermal conductivity than the bonding portion in consideration of the heat radiation efficiency.
When the heat dissipating portion has a thermal conductivity of less than about 200 W / mK, it is not preferable because it can have a relatively low thermal conductivity as compared with each of the adhesive portion and the insulating portion disposed at the upper portion, and has a thermal conductivity exceeding about 500 W / mK It is not preferable because the range of selection for the material of the heat dissipation part itself becomes narrow. Accordingly, in the light emitting diode package of the present invention, the heat radiating portion may have a thermal conductivity of about 200 to 500 W / mK. Therefore, the heat dissipating part can be made of a metal substrate including copper, aluminum or a mixture thereof.
When the above-mentioned heat radiating portion has a thickness of less than about 0.5 mm, heat dissipation efficiency of the heat radiating portion itself is not preferable, and if it has a thickness exceeding about 5.0 mm, the heat transfer heat transfer path becomes long It is not preferable. Thus, the above-mentioned heat dissipating part may be provided to have a thickness of about 0.5 to 5.0 mm.
As described above, the light emitting diode package of the present invention includes the heat dissipating portion having the insulating portion and the adhesive portion, which are made of the ceramic insulating material having high thermal conductivity, and having a thermal conductivity higher than that of the adhesive portion, It can emit more efficiently. That is, the light emitting diode package of the present invention has a vertical heat transfer path of the insulating portion, the adhesive portion, and the heat dissipating portion with respect to the light emitting portion, and further increases the thermal conductivity of the insulating portion, the adhesive portion, and the heat dissipating portion, You can expect.
A manufacturing method of the light emitting diode package of the present invention is as follows.
First, a pattern portion of a light emitting portion is formed on an insulating portion made of a ceramic insulating material. The pattern unit can be formed by performing a plating process or a screen printing process based on the sputtered thin film pattern as mentioned above. When the bonding portion includes the vapor deposition portion and the plating portion, the vapor deposition portion and the plating portion are formed under the insulating portion. Then, after the brazing filler joint of the bonding portion is interposed between the heat dissipation portion and the insulation portion, the process is performed in a reducing gas atmosphere or a vacuum atmosphere of 1 10 -5 to 1 10 -3 Torr Torr to separate the insulation portion and the heat dissipation portion . The light emitting diode package can be obtained by mounting the light emitting diode on the pattern portion to form the light emitting portion.
Further, a conductive layer may be further formed as a member capable of transmitting external power to the light emitting portion. At this time, the conductive layer may be formed mainly on the heat dissipation portion, and further, an insulation portion for insulation between the conductive layer and the heat dissipation portion may be further formed. Here, the conductive layer may be formed mainly of copper, nickel, gold, silver, etc., and may be formed by performing a plating process to have a thickness of about 0.1 to 5 탆. In addition, the insulating layer may be formed of FR- A thickness of about 0.1 to 1 mm may be formed by applying a prepreg, an epoxy, a heat dissipation tape or the like.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1 is a schematic cross-sectional view illustrating a light emitting diode package according to a first embodiment of the present invention.
1, a light emitting
The
In particular, the light emitting
The light emitting
A
2 is a schematic cross-sectional view illustrating a light emitting diode package according to a second embodiment of the present invention.
The light emitting
Referring to FIG. 2, the
In the case of the light emitting
3 to 5 are sectional views for explaining a method of manufacturing the light emitting diode package of FIG.
Referring to Fig. 3, an insulating
A
4, the insulating
As mentioned above, the process is performed in a reducing gas atmosphere or a vacuum atmosphere of 1 10 -5 to 1 10 -3 Torr. The insulating
Here, the light emitting diode package of the present invention is manufactured by using the
Referring to Fig. 5, the
The light emitting diode is mounted on the
The
3 to 5 are manufactured by using the
6 is a cross-sectional view illustrating a method of manufacturing the light emitting diode package of FIG.
6,
A
Next, the light emitting diode package of FIG. 2 can be obtained by performing the same processes as in FIGS. 4 to 5.
6 includes a
Hereinafter, an example in which the temperature of the light emitting diode of the light emitting diode package of the present invention, the temperature of the heat dissipating unit, and the light emitting diode temperature and the heat dissipating unit temperature of the conventional light emitting diode package are compared will be described.
First, as the sample 1, the light emitting diode package of the present invention having the insulating part made of aluminum nitride, the evaporated part based on titanium and copper, the bonding part made of the plating part and the brazing filler part, and the heat dissipating part made of copper was provided.
As the sample 2, there is provided a conventional light emitting diode package including an insulating part made of a thermally conductive epoxy and a heat radiation tape, and a heat radiating part made of copper.
A current of about 350 mA was applied to each of the individual chips of the light emitting diode package of the aforementioned sample 1 and a current of about 233 mA was applied to each individual chip of the light emitting diode package of the sample 2, Were measured.
FIG. 7 is a photograph showing a temperature of a light emitting diode in a light emitting diode package according to a second embodiment of the present invention, and FIG. 8 is a photograph showing a temperature of the light emitting diode in a conventional light emitting diode package.
As a result of the measurement, it was confirmed that the light emitting diode temperature and the heat dissipating unit temperature in sample 1 were 62.0 ° C and 26.5 ° C, respectively, as shown in FIG. 7 and Table 1. The light emitting diode temperature and the heat dissipating unit temperature in sample 2, And 33.6 ° C and 101.0 ° C, respectively, as shown in Table 1.
Thus, it can be seen that the temperature of the light emitting diode of the light emitting diode package of the present invention and the temperature of the heat dissipating unit are significantly lower than the temperature of the light emitting diode of the conventional light emitting diode package and the temperature of the heat dissipating unit. Particularly, although the current is higher than that of the conventional LED package, the temperature of the LED and the temperature of the heat emitting portion of the LED package of the present invention are remarkably low.
Accordingly, it was confirmed that the light emitting diode package of the present invention efficiently emits heat generated from the light emitting diode.
As described above, the light emitting diode package of the present invention has a vertical connection structure composed of a material having a high thermal conductivity in the order of the insulating portion, the adhesive portion, and the light emitting portion, thereby efficiently discharging the high temperature heat generated from the light emitting diode to the heat dissipating portion.
Accordingly, the light emitting diode package of the present invention can improve the heat dissipation property and reduce deterioration of the light emitting diode itself, thereby greatly improving the lifetime of the light emitting diode.
In addition, since the LED package of the present invention is manufactured by using the bonding portion including the brazing filler bonding portion and the sacrifice bonding portion, the insulating portion and the heat-radiating portion can be bonded more easily without occurrence of banding, .
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims. It can be understood that it is possible.
11: light emitting portion 12: light emitting diode
13: insulation part 14: pattern part
15, 31: bonding
17: heat sink 19: conductive layer
21: Insulating layer
100, 200: light emitting diode package
Claims (14)
A heat dissipation unit disposed below the light emitting unit to emit heat generated from the light emitting diode to the outside;
An insulating portion disposed between the pattern portion and the heat dissipating portion to insulate the pattern portion from the heat dissipating portion, the insulating portion being made of a material having a thermal conductivity lower than that of the heat dissipating portion; And
And an adhesive portion disposed between the heat dissipating portion and the insulating portion so as to be adhered between the heat dissipating portion and the insulating portion, the adhesive portion being made of a material having a thermal conductivity lower than that of the heat dissipating portion and higher than that of the insulating portion.
A bonding portion including a brazing filler joint portion made of a material having a thermal conductivity higher than that of the insulating portion in each of the other side of the insulating portion and the other side of the sacrificial insulation portion facing each other, and a sacrificial bonding portion made of the same material as the brazing filler joint portion And disposing a heat dissipation unit having a thermal conductivity higher than that of the adhering unit between the adhering unit and the sacrifice adhering unit;
Bonding the insulating portion and the sacrificial insulating portion to the heat dissipating portion using the adhesive portion and the sacrificial bonding portion;
Removing the sacrificial insulation portion and the sacrificial adhesion portion; And
And mounting the light emitting diode on the conductive layer so as to be electrically connected to the conductive layer.
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| KR1020130023296A KR102004173B1 (en) | 2013-03-05 | 2013-03-05 | LED Package and Method of manufacturing the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130023296A KR102004173B1 (en) | 2013-03-05 | 2013-03-05 | LED Package and Method of manufacturing the same |
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| Publication Number | Publication Date |
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| KR20140109078A true KR20140109078A (en) | 2014-09-15 |
| KR102004173B1 KR102004173B1 (en) | 2019-07-26 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200125233A (en) * | 2019-04-26 | 2020-11-04 | 주식회사 아모센스 | Semiconductor Package Assembly having Thermal Blocking member and Electronic Equipment having the Same |
| WO2021002652A1 (en) * | 2019-07-02 | 2021-01-07 | 주식회사 아모센스 | Semiconductor device package assembly and electronic device comprising same |
| KR20210003681A (en) * | 2019-07-02 | 2021-01-12 | 주식회사 아모센스 | Semiconductor Package Assembly and Electronic Equipment including the Same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008270609A (en) * | 2007-04-23 | 2008-11-06 | Harison Toshiba Lighting Corp | Heat radiating apparatus for electronic component |
-
2013
- 2013-03-05 KR KR1020130023296A patent/KR102004173B1/en active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008270609A (en) * | 2007-04-23 | 2008-11-06 | Harison Toshiba Lighting Corp | Heat radiating apparatus for electronic component |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200125233A (en) * | 2019-04-26 | 2020-11-04 | 주식회사 아모센스 | Semiconductor Package Assembly having Thermal Blocking member and Electronic Equipment having the Same |
| WO2021002652A1 (en) * | 2019-07-02 | 2021-01-07 | 주식회사 아모센스 | Semiconductor device package assembly and electronic device comprising same |
| KR20210003681A (en) * | 2019-07-02 | 2021-01-12 | 주식회사 아모센스 | Semiconductor Package Assembly and Electronic Equipment including the Same |
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| Publication number | Publication date |
|---|---|
| KR102004173B1 (en) | 2019-07-26 |
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