KR20210003681A - Semiconductor Package Assembly and Electronic Equipment including the Same - Google Patents

Abstract

Provided are a semiconductor element package assembly which can improve product reliability, and an electronic device including the same. According to an exemplary embodiment of the present invention, the semiconductor element package assembly comprises: a circuit board; a light emitting element mounted on the circuit board and emitting a laser; and a driving element mounted on the circuit board and controlling the light emitting element. The circuit board includes: a first substrate layer on which the light emitting element and the driving element are respectively mounted; and a second substrate layer laminated on one surface of the first substrate layer and made of a material having relatively higher thermal conductivity than the first substrate layer.

Description

Semiconductor device package assembly and electronic equipment including the same

The present invention relates to a semiconductor device package assembly and an electronic device including the same.

In a semiconductor device package generally used in electronic devices, various semiconductor devices and components are mounted on a patterned printed circuit board.

In recent years, the use of mobile devices such as cell phones and laptop computers is expanding. As such mobile devices emphasize portability, miniaturization is also required for various parts mounted thereon.

The demand for miniaturization of these components is no exception to semiconductor device packages. In other words, efforts are being made to reduce the overall size of a semiconductor device package by mounting various components even in a smaller size.

As part of this, attempts to miniaturize the size of the semiconductor component itself, to mount elements and components on both sides of a printed circuit board, or to minimize the gap between semiconductor components mounted on a printed circuit board are continuing.

Accordingly, since the direct degree of semiconductor components mounted on the printed circuit board increases, the amount of heat generated by the semiconductor device is also increasing.

In such a case, if a heat-sensitive component is mounted near another semiconductor device that generates a lot of heat, the heat-sensitive component may have a problem such as deterioration of characteristics due to heat transferred from another semiconductor device that generates heat.

Accordingly, there is a problem in that heat-sensitive components are difficult to be placed near elements that generate heat.

Accordingly, a semiconductor device package including heat-sensitive components is difficult to downsize due to heat-sensitive components.

Meanwhile, among electronic devices, laser light emitting devices are used for various purposes.

For example, a recently developed laser light emitting device, a Vertical Surface Emitting Laser (VCSEL, hereinafter referred to as VCSEL) is used for measuring distance to an object, sensing an image, and producing a 3D image.

Such VCSELs are being applied not only to mobile devices such as mobile phones, but also to LiDARs, drones, and robots of vehicles.

In addition, the demand for miniaturization of components mounted not only in mobile devices, but also in vehicle lidars, drones, and robots has been continuously raised.

However, since the VCSEL device is sensitive to heat, it is difficult to place a driving device with a large amount of heat around the VCSEL device. This is acting as an obstacle to miniaturization of semiconductor device packages and product reliability.

The present invention has been devised in consideration of the above points, and the overall size is reduced by constructing a circuit board using heterogeneous materials so that heat generated from an element mounted on the circuit board is prevented from being transferred to nearby components or devices. An object thereof is to provide a semiconductor device package assembly capable of improving reliability while improving reliability and an electronic device including the same.

In order to solve the above problems, the present invention includes a circuit board; A light emitting device mounted on the circuit board and emitting a laser; And a driving device mounted on the circuit board and controlling the light emitting device, wherein the circuit board includes: a first board layer on which the light emitting device and the driving device are respectively mounted; And a second substrate layer stacked on one surface of the first substrate layer and made of a material having a relatively higher thermal conductivity than the first substrate layer.

For example, the first substrate layer may be formed of LTCC, and the second substrate layer may be formed of any one of AIN, FR4, and HTCC.

In addition, the second substrate layer may be formed to have a relatively thicker thickness than the first substrate layer.

In addition, the second substrate layer may be bonded to one surface of the first substrate layer through soldering.

In addition, the semiconductor device package assembly may further include at least one heat shield member configured to block heat generated from the driving device from being transferred to the light emitting device.

As an example, the heat shield member may include a first heat shield member protruding from one surface of the first substrate layer to a predetermined height so as to be positioned between the light emitting device and the driving device.

As another example, the heat shield member may include a second heat shield member disposed between the light emitting device and the driving device and embedded in the first substrate layer so as to be disposed along the thickness direction of the first substrate layer.

In addition, the at least one heat shield member may be made of a material having a relatively higher thermal conductivity than the first substrate layer.

In addition, the semiconductor device package assembly includes a first heat dissipating member buried in the first substrate layer along the thickness direction of the first substrate layer so as to transfer heat generated from the light emitting device to the second substrate layer. It may contain more.

In this case, the first heat dissipating member may have an upper end in contact with the light emitting device and a lower end in contact with the second substrate layer.

In addition, the semiconductor device package assembly includes a second heat dissipating member embedded in the second substrate layer along the thickness direction of the first substrate layer so as to transfer heat from the first substrate layer to the second substrate layer. It may include, and the second heat dissipating member may not be disposed directly under the driving element and the light emitting element.

In addition, the light-emitting device may be a vertical cavity surface emitting laser (VCSEL: Vertical Cavity Surface Emitting Laser).

Meanwhile, the semiconductor device package assembly described above can be applied to an electronic device.

LTCC, which is used as a material for a circuit board, has a relatively high manufacturing cost, and may cause a bending problem due to heat. However, in the present invention, the circuit board may be formed by bonding of different materials having different thermal conductivity. That is, according to the present invention, since the circuit board is formed by bonding a portion formed of LTCC and a portion formed of a different material than the LTCC, it is possible to reduce manufacturing cost while supplementing strength and effectively dissipating heat. Through this, the present invention can further reduce the size of the semiconductor device package and improve the reliability of the product.

In addition, according to the present invention, since a heat-blocking member is disposed between the driving element and the heat-sensitive light-emitting element, heat generated from the driving element can be blocked from being transferred to the heat-sensitive light-emitting element. I can.

In addition, according to the present invention, since heat generated from the driving device is blocked from being transferred to the heat-sensitive light-emitting device, the distance between the driving device and the heat-sensitive light-emitting device can be narrowed, thereby improving reliability and reducing the size of the semiconductor device package. have.

Furthermore, according to the present invention, since heat generated from the light emitting device through the heat dissipating member can be directly transferred to a portion of the circuit board having relatively high thermal conductivity, the reliability of the heat-sensitive light emitting device can be further improved.

1 is a view showing a state in which a housing and a diffusion member are separated in a semiconductor device assembly according to an embodiment of the present invention;
FIG. 2 is a view showing a state in which the semiconductor device assembly of FIG. 1 is disposed under the window, and is a combined cross-sectional view viewed from the direction AA of FIG. 1;
3 is an enlarged view of the first heat blocking member in FIG. 2, and FIG. 4 is a view showing a state in which a housing and a diffusion member are separated in a semiconductor device assembly according to another embodiment of the present invention;
FIG. 5 is a view showing a state in which the semiconductor device assembly of FIG. 4 is disposed under a window, and is a combined cross-sectional view viewed from a direction BB of FIG. 4;
6 is a view showing a form in which a second heat dissipating member is provided on a circuit board of a semiconductor device assembly according to the present invention;
7 is a cross-sectional view in the CC direction of FIG. 6;
8 is a bottom view showing a diffusion member applicable to a semiconductor device assembly according to the present invention, and,
9 is a partial cross-sectional view showing a state in which a diffusion member and a housing are coupled in the semiconductor device assembly according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those of ordinary skill in the art can easily implement the present invention. The present invention may be implemented in various different forms, and is not limited to the embodiments described herein. In the drawings, parts not related to the description are omitted in order to clearly describe the present invention, and the same reference numerals are added to the same or similar components throughout the specification.

The semiconductor device package assemblies 100 and 200 according to an exemplary embodiment of the present invention may include a circuit board 110, a light emitting device 120, and a driving device 130, as shown in FIGS. 1 and 4.

The circuit board 110 may mount various semiconductor devices and components. Such a circuit board 110 may include a circuit pattern formed inside or on a surface.

In this case, the circuit board 110 may include a first substrate layer 112 and a second substrate layer 114.

Specifically, the first substrate layer 112 may be a substrate layer on which the driving device 130 and the light emitting device 120 are mounted on a surface, and is used for mounting the driving device 130 and the light emitting device 120 It may include a circuit pattern.

The first substrate layer 112 may be formed of a ceramic material. For example, the first substrate layer 112 may be formed of an LTCC material.

However, the material of the first substrate layer 112 is not limited thereto, and may be made of a material such as AIN, FR4 or HTCC.

The second substrate layer 114 may be disposed on one surface of the first substrate layer 112.

That is, the second substrate layer 114 may be disposed on the lower surface of the first substrate layer 112, and the lower surface of the first substrate layer 112 is the driving element 130 and the light emitting element 120 May be the opposite side of the side on which is mounted.

Like the first substrate layer 112, the second substrate layer 114 may be formed of a ceramic material.

In this case, the second substrate layer 114 may be formed of a material having a relatively higher thermal conductivity than the first substrate layer 112.

For example, when the first substrate layer 112 is formed of an LTCC material, the second substrate layer 114 has a relatively higher thermal conductivity than the LTCC, and has good heat resistance, corrosion resistance, and electrical insulation. AlN) material can be formed.

However, the material of the first substrate layer 112 and the second substrate layer 114 is not limited thereto, and each of the first substrate layer 112 and the second substrate layer 114 is FR4, AlN, and LTCC. And HTCC may be formed of any one material. In this case, the second substrate layer 114 may be used without limitation as long as it has a relatively higher thermal conductivity than the first substrate layer 112.

In addition, the second substrate layer 114 may be formed of a material having relatively low cost, excellent strength, and high thermal conductivity than the material of the first substrate layer 112.

Through this, the semiconductor device package assembly 100 and 200 according to an embodiment of the present invention can lower the manufacturing cost as compared to when the entire circuit board is composed of only the first substrate layer 112, and bend due to external force or heat. You can improve the problem.

The second substrate layer 114 may be bonded to the lower surface of the first substrate layer 112 through soldering.

Through this, the first substrate layer 112 on which the driving element 130 and the light emitting element 120 are mounted on the circuit board 110 on which the first substrate layer 112 and the second substrate layer 114 are stacked Since the second substrate layer 114 is formed of a material having a relatively lower thermal conductivity than the second substrate layer 114, even if heat is radiated from the driving device 130 and the light emitting device 120, the driving device 130 and the light emitting device 120 It is possible to minimize the heat emitted from being transferred to the driving device 130 and other components mounted around the light emitting device 120 through the first substrate layer 112.

In addition, since the second substrate layer 114 bonded to the lower surface of the first substrate layer 112 on the circuit board 110 has a relatively higher thermal conductivity than the first substrate layer 112 The substrate layer 114 may rapidly receive and disperse heat from the first substrate layer 112, and may rapidly dissipate the heat transferred from the first substrate layer 112.

Through this, the semiconductor device package assemblies 100 and 200 according to an exemplary embodiment of the present invention may implement excellent heat dissipation performance through the circuit board 110 described above.

In this case, the second substrate layer 114 may be formed to have a relatively thicker thickness than the first substrate layer 112.

That is, the second substrate layer 114 may be formed to have a relatively thicker thickness than the first substrate layer 112 and then bonded to the lower surface of the first substrate layer 112 through soldering.

Through this, the second substrate layer 114 may have a relatively higher thermal conductivity than the first substrate layer 112 and may implement a larger heat capacity, and may supplement the strength of the circuit board 110. have.

Accordingly, the semiconductor device package assembly 100 and 200 according to an embodiment of the present invention can have a higher heat capacity through the second substrate layer 114, thereby improving heat dissipation performance while further improving the bending problem due to external force or heat. can do.

As described above, the light emitting device 120 may be mounted on one surface of the first substrate layer 112 of the circuit board 110. Such a light emitting device 120 can emit a laser.

As an example, the light emitting device 120 may be a VCSEL, but the present invention is not limited thereto, and any known laser light emitting device may be applied without limitation.

The driving device 130 may control driving of the light emitting device 120. Like the light emitting device 120, the driving device 130 may be mounted on one surface of the first substrate layer 112 of the circuit board 110.

In this case, the driving device 130 may be mounted on the first substrate layer 112 so as to be located close to the light emitting device 120.

As described above, in the semiconductor device package assembly 100 and 200 according to the exemplary embodiment, the overall size of the semiconductor device package assembly 100 and 200 may be reduced by arranging the light emitting device 120 and the driving device 130 in close proximity to each other.

Through this, when the semiconductor device package assemblies 100 and 200 according to an embodiment of the present invention are applied to a three-dimensional sensor module for distance recognition, the distance between the driving device 130 and the light emitting device 120 can be minimized. Even if the light emitting device 120 is provided as a VCSEL, the VCSEL may have a fast response speed. Accordingly, the precision of the VCSEL may be improved.

Meanwhile, in general, a VCSEL is a heat sensitive component, and its characteristics may change according to temperature changes, and a change in characteristics due to heat in the VCSEL may adversely affect measurement accuracy.

On the other hand, since the driving device 130 is a highly integrated device, it can emit a lot of heat during operation.

Accordingly, when the driving element 130 that emits a lot of heat is disposed so as to be close to the light-emitting element 120 that is sensitive to heat, heat emitted from the driving element 130 can be transferred to the light-emitting element 120, and The sensitive light-emitting device 120 may change characteristics due to heat transferred from the driving device 130, thereby deteriorating measurement accuracy and responsiveness.

In order to solve this problem, the semiconductor device package assembly 100 and 200 according to an embodiment of the present invention includes at least one heat shield so as to block heat emitted from the driving device 130 from being transmitted to the light emitting device 120. It may include members 152 and 154.

For example, the heat blocking members 152 and 154 may include at least one of a first heat blocking member 152 and a second heat blocking member 154 as shown in FIGS. 2 and 5.

Specifically, the first heat-blocking member 152 may be formed to be positioned between the light emitting device 120 and the driving device 130, and the first heat-blocking member 152 may include the first substrate layer ( 112) may be formed to protrude a certain height from one surface.

In this case, the first heat blocking member 152 has a width equal to or wider than the width of the driving device 130 mounted on one surface of the first substrate layer 112. It can be formed to have.

Accordingly, the light emitting device 120 and the driving device 130 may be disposed on both sides of the first heat blocking member 152 based on the first heat blocking member 152.

Through this, the first heat blocking member 152 may block the heat generated from the driving device 130 from being transmitted to the light emitting device 120 through radiation.

For this reason, even if the heat-sensitive light emitting device 120 is disposed in a position close to the driving device 130 emitting relatively high temperature heat, the first heat blocking member 152 causes the generated Since heat transfer to the light emitting device 120 may be blocked, the characteristics of the light emitting device 120 may be prevented from being changed by heat.

In this case, the first heat blocking member 152 may be formed of the same material as the first substrate layer 112 and may be integrally formed with the first substrate layer 112.

However, the method of forming the first heat blocking member 152 is not limited thereto, and the first heat blocking member 152 may be formed of a material different from that of the first substrate layer 112, and It may be provided as a member and fixed to one surface of the first substrate layer 112.

In this case, the first heat blocking member 152 may include a heat reflection layer 158 formed on a surface as shown in FIG. 3.

The heat reflection layer 158 may be formed on one surface of the entire surface of the first heat blocking member 152 that faces the driving element 130.

Through this, the heat reflection layer 158 may reflect heat generated from the driving element 130, and the heat generated from the driving element 130, like the first heat blocking member 152, emit light. Transmission to the device 120 may be blocked.

As a non-limiting example, the heat reflection layer 158 may be a deposition layer on which a metal such as gold, silver, or aluminum is deposited, or a coating layer on which a coating material including a heat reflection material is applied.

The heat reflective layer 158 may be used without limitation as long as it does not absorb heat and has a high heat reflectance.

In addition, the heat reflection layer 158 may be formed on the entire exposed surface exposed to the outside from the first heat blocking member 152.

Meanwhile, the second heat blocking member 154 may block heat generated by the driving device 130 from being transferred to the light emitting device 120 through the circuit board 110 in a conduction manner.

To this end, the second heat blocking member 154 may be buried inside the first substrate layer 112 on which the light emitting device 120 and the driving device 130 are mounted.

The second heat blocking member 154 may be buried in the first substrate layer 112 so as to be positioned between the light emitting element 120 and the driving element 130 inside the first substrate layer 112. have.

As a non-limiting example, when the semiconductor device package assemblies 100 and 200 according to an embodiment of the present invention include both the first heat shield member 152 and the second heat shield member 154, the second train The end member 154 may be buried inside the first substrate layer 112 so as to be positioned directly under the first heat blocking member 152.

Specifically, the second heat blocking member 154 may be a plate-shaped member having a predetermined width and length, and the first substrate layer 112 is disposed along the thickness direction of the first substrate layer 112. Can be buried inside of

Accordingly, when the heat generated from the driving element 130 is transferred to the first substrate layer 112 through the portion on which the driving element 130 is mounted, the second heat blocking member 154 is driven Even if heat conducted to the first substrate layer 112 through the portion where the device 130 is mounted is dispersed along the first substrate layer 112, it is possible to prevent the light emitting element 120 from moving to the mounted portion. .

That is, the second heat blocking member 154 absorbs heat transferred from the driving device 130 to the first substrate layer 112 and moves toward the light emitting device 120 so that the first substrate layer 112 Through this, heat of the driving device 130 may be prevented from moving toward the light emitting device 120.

The second heat blocking member 154 may be connected to the ground pattern GND formed on the first substrate layer 112.

Here, the ground pattern GND may be formed inside the first substrate layer 112 so that at least a portion of the ground pattern GND is exposed to the outside.

Accordingly, heat absorbed through the second heat blocking member 154 may be discharged to the outside through the ground pattern GND.

The second heat blocking member 154 may be formed of a material having high thermal conductivity.

As a non-limiting example, the second heat blocking member 154 may be gold, silver, copper, or the like, but is not limited thereto, and any of various known materials may be applied as long as the material has excellent thermal conductivity.

As described above, when the semiconductor device package assemblies 100 and 200 according to an embodiment of the present invention include both the first heat shield member 152 and the second heat shield member 154 described above, the driving device 130 Radiant heat among the radiated heat may be blocked from being transferred to the light emitting device 120 through the first heat blocking member 152, and among the heat emitted from the driving device 130, the first substrate layer 112 ), the conduction heat may be blocked from being transmitted to the light emitting device 120 through the second heat blocking member 154.

Through this, in the semiconductor device package assembly 100 and 200 according to an embodiment of the present invention, the first substrate layer 112 is positioned so that the heat-sensitive light emitting device 120 and the driving device 130 that emits a lot of heat are located at close distance. Even if mounted on one side of ), heat from the driving device 130 may be prevented from being conducted toward the light emitting device 120 through at least one of the first heat blocking member 152 and the second heat blocking member 154.

Accordingly, the semiconductor device package assembly 100 and 200 according to an embodiment of the present invention can be reduced in overall size, and even if the heat-sensitive light emitting device 120 is located close to the driving device 130 side, which is a heat source, it will be smoothly operated. I can.

Meanwhile, the semiconductor device package assemblies 100 and 200 according to the exemplary embodiment may further include at least one heat dissipating member 162 and 164 for rapidly dissipating heat from the circuit board 110 to the outside.

That is, the at least one heat dissipating member (162,164) is a position corresponding to a portion of the circuit board 110 where components such as the light emitting element 120 and the driving element 130 are mounted, or a portion where the component is mounted It may be provided to be located around the.

Through this, the at least one heat dissipating member 162 and 164 may provide a path for rapidly discharging heat transferred from the components to the circuit board 110 to the outside.

For example, the heat dissipating members 162 and 164 may include at least one of a first heat dissipating member 162 and a second heat dissipating member 164.

Specifically, as shown in FIGS. 2 and 5, the first heat dissipating member 162 is positioned directly under the light emitting device 120 at a position corresponding to the light emitting device 120. 110) can be buried inside.

As described above, the light-emitting device 120 may be a heat-sensitive component such as a VCSEL, and if the heat generated during the operation of the light-emitting device 120 is not properly discharged, the heat-sensitive light-emitting device 120 has deteriorated characteristics Can be.

In order to prevent this, in the present invention, the first heat dissipating member 162 is embedded in the first substrate layer 112 so that the heat generated from the light emitting device 120 can be transferred to the second substrate layer 114 Can be.

That is, the first heat dissipating member 162 may be buried along the thickness direction of the first substrate layer 112, the upper end may be in contact with the light emitting device 120, and the lower end may be the second It may be in contact with one surface of the substrate layer 114.

Here, the first heat dissipating member 162 may have a relatively higher thermal conductivity than the first substrate layer 112, similar to the second substrate layer 114.

Accordingly, the heat generated by the light emitting device 120 may be transferred to the second substrate layer 114 through the first heat dissipating member 162 and transferred to the second substrate layer 114. Heat may be discharged to the outside through the surface of the second substrate layer 114.

In this case, the second substrate layer 114 may have a relatively higher thermal conductivity than the first substrate layer 112 as described above. Accordingly, the heat generated during the operation of the light emitting device 120 is not conducted to the first substrate layer 112 and is rapidly transferred to the second substrate layer 114 through the first heat dissipating member 162. I can.

Accordingly, the heat generated by the light-emitting device 120 does not remain in the vicinity of the light-emitting device 120 or in the portion of the first substrate layer 112 on which the light-emitting device 120 is mounted, and the light-emitting device 120 By being able to quickly move to the second substrate layer 114 spaced apart from and a predetermined distance, it is possible to prevent deterioration of the characteristics of the light emitting device 120 due to heat.

The first heat dissipating member 162 may be formed of a material having high thermal conductivity.

As a non-limiting example, the first heat dissipating member 162 may be a metal slug made of a metal material such as gold, silver, copper, etc., but is not limited thereto, and the first substrate layer 112 As long as the material has relatively higher thermal conductivity and excellent thermal conductivity, all of a variety of known materials may be applied.

In the drawings, the first heat dissipating member 162 is shown to be buried only in the first substrate layer 112, but the present invention is not limited thereto, and the first heat dissipating member 162 is the second substrate It may also be buried in the layer 114.

For example, the first heat dissipating member 162 buried in the second substrate layer 114 may be disposed at a position corresponding to the first heat dissipating member 162 buried in the first substrate layer 112. In addition, one end of the first heat dissipating member 162 embedded in the first substrate layer 112 and the first heat dissipating member 162 embedded in the second substrate layer 114 may be in direct contact with each other. .

On the other hand, the second heat dissipating member 164 may be formed on the first substrate layer 112 as shown in FIGS. 6 and 7, and can absorb heat existing in the first substrate layer 112. It can be quickly transferred to the second substrate layer 114.

To this end, the second heat dissipating member 164 may be buried along the thickness direction of the first substrate layer 112 like the first heat dissipating member 162, and the upper end may be exposed to the outside. And the lower end may be in contact with one surface of the second substrate layer 114.

In this case, the second heat dissipating member 164 is parallel to the thickness direction of the first substrate layer 112 so as to minimize the movement path of heat transferred to the second substrate layer 114. It may be buried in the substrate layer 112. Here, the second heat dissipating member 164 may be formed of a material having high thermal conductivity.

As a non-limiting example, the second heat dissipating member 164 may be a metal slug made of a metal material such as gold, silver, copper, etc., but is not limited thereto, and the first substrate layer 112 As long as the material has relatively higher thermal conductivity and excellent thermal conductivity, all of a variety of known materials may be applied.

Accordingly, the second heat dissipating member 164 can quickly absorb heat present in the first substrate layer 112, and through a portion exposed to the outside from one surface of the first substrate layer 112 The absorbed heat may be released to the outside, or heat absorbed through a portion in contact with the second substrate layer 114 may be transferred to the second substrate layer 114.

In addition, heat transferred to the second substrate layer 114 through the second heat dissipating member 164 may be rapidly discharged to the outside through the surface of the second substrate layer 114.

In this case, the second heat dissipating member 164 is different from the first heat dissipating member 162 in which components such as the light emitting device 120 and the driving device 130 are mounted in the first substrate layer 112. The components such as the light emitting device 120 and the driving device 130 may be disposed not directly under the part, but in a peripheral area of the part where the components are mounted.

This is to ensure smooth heat dissipation while avoiding interference with elements mounted on the first substrate layer 112.

Meanwhile, the semiconductor device package assemblies 100 and 200 according to an embodiment of the present invention may include housings 170 and 270, and a diffusion member 180 disposed above the light emitting device 120 at the side of the housings 170 and 270 May be provided.

Here, the diffusion member 180 may diffuse light emitted from the light emitting device 120.

Accordingly, light such as a laser emitted from the light emitting device 120 can be diffused through the diffusion member 180, thereby preventing the occurrence of safety accidents such as damage to the optic nerve.

For example, the housings 170 and 270 may include openings 172 and 272 penetrating through a region corresponding to an upper portion of the light emitting device 120 mounted on the first substrate layer 112, and the diffusion member 180 ) May be disposed to be located at the openings 172 and 272 as shown in FIG. 9.

In this case, the diffusion member 180 may include a lens pattern 182 for diffusing light, such as a laser, as shown in FIG. 8, and the diffusion member ( An ITO coating layer 184 for detecting damage of 180 may be formed to surround the lens pattern 182.

Accordingly, light (laser) emitted from the light emitting device 120 may be diffused through the diffusion member 180, and irradiated to the outside through a window 190 disposed above the diffusion member 180 Can be.

Here, the window 190 may be a component provided in an electronic device, and the semiconductor device package assemblies 100 and 200 according to an embodiment of the present invention may be installed in the electronic device so as to be located behind the window 190. I can.

Accordingly, the light (laser) emitted from the light emitting device 120 may be reflected from the surface of the object and then received by a light receiving unit (not shown).

Meanwhile, the semiconductor device package assemblies 100 and 200 according to an embodiment of the present invention may further include a photodiode 140 disposed on one side of the light emitting device 120.

The photodiode 140 may stop the operation of the light emitting device 120 when the diffusion member 180 is damaged.

Through this, the semiconductor device package assembly 100 and 200 according to an embodiment of the present invention can prevent the light generated from the light emitting device 120 from being directly irradiated to the human body, thereby causing safety accidents such as damage to the optic nerve. Can be prevented in advance

On the other hand, the housing 170 may be provided to cover a partial area of one surface of the first substrate layer 112 as shown in FIGS. 1 and 2, but as shown in FIGS. 4 and 5 The housing 270 may be provided to cover the entire surface of the first substrate layer 112.

That is, the housing 270 may be provided to cover the upper portion of the driving element 130 together with the light emitting element 120.

In this case, the housing 270 may include a function of shielding electromagnetic waves generated when the driving device 130 is operated.

To this end, an electromagnetic wave shielding coating layer 174 may be formed on the inner surface of the housing 270 as shown in the enlarged view of FIG. 5.

Through this, the semiconductor device package assembly 200 according to an embodiment of the present invention may block electromagnetic waves through the housing 270 even if electromagnetic waves are generated when the driving device 130 is operated.

Meanwhile, the housings 170 and 270 may be provided to have heat dissipation.

For example, the housings 170 and 270 may be made of a metal material such as aluminum or copper, but may be made of a known heat-dissipating plastic material so as to reduce overall weight and implement heat dissipation performance.

In this case, the housings 170 and 270 may further include a heat dissipation coating layer (not shown) applied to the surface to increase heat dissipation.

For example, the heat dissipation coating layer may be made of a material including an insulating heat dissipation filler dispersed in a polymer matrix to have both heat dissipation and insulation properties.

Meanwhile, in the semiconductor device package assembly 200 according to an embodiment of the present invention, when the housing 270 has heat dissipation and is provided to cover the upper portion of the driving device 130, the inside of the housing 270 The side surface may be in direct contact with one surface of the driving element 130.

That is, as shown in FIG. 5, the inner surface of the housing 270 may directly contact one surface of the driving element 130.

Through this, heat generated by the driving element 130 may be transferred to the housing 270, thereby making heat dissipation more smooth.

In this case, the heat transfer material 176 may be interposed between the inner surface of the housing 27 and one surface of the driving element 130 in contact with each other.

The heat transfer material 176 prevents an air layer from being formed between the surface of the driving element 130 and the inner surface of the housing 270 facing each other, thereby transferring heat generated from the driving element 130 to the housing 270. It can be delivered smoothly. For example, the heat transfer material 176 may be a thermal interface material (TIM) such as thermal grease, and a heat-dissipating composition comprising at least one of a thermally conductive filler and a phase change material is solidified. It can also be a form.

The semiconductor device package assemblies 100 and 200 according to an embodiment of the present invention described above may be applied to electronic devices such as mobile phones and notebook computers, and may also be applied to lidars of vehicles, drones, robots, and the like.

Although the embodiments of the present invention have been described above, the spirit of the present invention is not limited to the embodiments presented in the present specification, and those skilled in the art who understand the spirit of the present invention can add components, Other embodiments may be easily proposed by changes, deletions, additions, etc., but it will be said that this is also within the scope of the present invention.

100: semiconductor device package assembly
110: circuit board 112: first substrate layer
114: second substrate layer GND: ground pattern
120: light emitting element 130: driving element
140: photodiode 152: first heat blocking member
154: second heat blocking member 158: heat reflection coating layer
162: first heat dissipating member 164: second heat dissipating member
170,270: housing 172,272: opening
174: electromagnetic wave shielding coating layer 176: heat transfer material
180: diffusion member 190: window

Claims (13)

Circuit board;
A light emitting device mounted on the circuit board and emitting a laser; And
Includes; a driving device mounted on the circuit board and controlling the light emitting device,
The circuit board,
A first substrate layer on which the light emitting device and the driving device are respectively mounted; And
And a second substrate layer stacked on one surface of the first substrate layer and made of a material having a relatively higher thermal conductivity than the first substrate layer. The method of claim 1,
The first substrate layer is formed of LTCC,
The second substrate layer is a semiconductor device package assembly formed of any one of AIN, FR4, and HTCC. The method of claim 1,
The semiconductor device package assembly wherein the second substrate layer is formed to have a relatively thicker thickness than the first substrate layer. The method of claim 1,
A semiconductor device package assembly wherein the second substrate layer is bonded to one surface of the first substrate layer through soldering. The method of claim 1, wherein the semiconductor device package assembly,
A semiconductor device package assembly further comprising: at least one heat shield member for blocking heat generated from the driving device from being transferred to the light emitting device. The method of claim 5,
The heat shield member includes a first heat shield member protruding from one surface of the first substrate layer to a predetermined height so as to be positioned between the light emitting device and the driving device. The method of claim 5,
The heat shield member includes a second heat shield member disposed between the light emitting device and the driving device and embedded in the first substrate layer so as to be disposed along the thickness direction of the first substrate layer. The method of claim 5,
The semiconductor device package assembly wherein the at least one heat shield member is made of a material having a relatively higher thermal conductivity than the first substrate layer. The method of claim 1, wherein the semiconductor device package assembly,
A semiconductor device package assembly further comprising a first heat dissipating member buried in the first substrate layer along the thickness direction of the first substrate layer to transfer heat generated from the light emitting device to the second substrate layer. The method of claim 9,
The first heat dissipating member has an upper end in contact with the light emitting device and a lower end in contact with the second substrate layer. The method of claim 1, wherein the semiconductor device package assembly,
And a second heat dissipating member embedded in the second substrate layer along the thickness direction of the first substrate layer so as to transfer heat from the first substrate layer to the second substrate layer,
The second heat dissipating member is a semiconductor device package assembly not disposed directly under the driving device and the light emitting device. The method of claim 1,
The light emitting device is a vertical cavity surface light emitting laser (VCSEL: Vertical Cavity Surface Emitting Laser) semiconductor device package assembly. An electronic device comprising the semiconductor device package assembly according to any one of claims 1 to 12.

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