CN101593802A - Novel substrate for packaging LED - Google Patents
Novel substrate for packaging LED Download PDFInfo
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- CN101593802A CN101593802A CNA2009100653774A CN200910065377A CN101593802A CN 101593802 A CN101593802 A CN 101593802A CN A2009100653774 A CNA2009100653774 A CN A2009100653774A CN 200910065377 A CN200910065377 A CN 200910065377A CN 101593802 A CN101593802 A CN 101593802A
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Abstract
The present invention relates to novel substrate for packaging LED, can effectively improve high-power encapsulation base heat dispersion, improvement reaches the problem that the life-span descends greatly because of temperature rise causes the led chip light decay, the technical scheme of its solution is, comprise the welding film, conducting film, chip attach layer and graphite substrate, welding film bottom is a conducting film, the basilar memebrane that is connected as a single entity is arranged at the bottom of conducting film, basilar memebrane places on the insulating oxide, the insulating oxide bottom places on the graphite substrate, the welding film, conducting film, the middle part of basilar memebrane is with constituting groove on the insulating oxide between aspect, be equipped with the chip attach layer on the inherent insulating oxide aspect of groove, novel structure of the present invention is simple, uniqueness, easy to use, good heat dissipation effect, long service life, and can strengthen the high temperature resistant impact property of LED product, and improve product reliability and stability, be improvement and innovation to existing LED base plate for packaging.
Description
One, technical field
The present invention relates to the led chip production equipment, particularly a kind of novel substrate for packaging LED.
Two, background technology
Along with the fast development of electronic technology, electronic devices and components are miniaturization day by day, and the heat that causes chip to produce is just more and more concentrated.Especially the powerful development of LED makes the interior caloric value of unit volume of components and parts rise step by step.If these heats can not in time be discharged the external world, cause the temperature-rise effect of chip, the life-span of LED and light all can be had a greatly reduced quality, and the only about 0.36W/MK of pyroconductivity of the pcb board base plate for packaging that tradition is used can not satisfy the desirable heat-radiating substrate material of great power LED far away.
The LED of prior art encapsulates used substrate and is generally PCB, pottery or metal substrate as the copper aluminium base.Their total following shortcomings: 1) the pcb board heat transfer efficiency is low, cause the substrate thermal diffusivity poor, 2) pcb board and the metal substrate coefficient of expansion and led chip differ too big, it is low to cause chip flaw and luminance when variations in temperature easily, cause luminous efficiency and life-span to be had a greatly reduced quality, fail to reach high power, long-life specification requirement.3) it is inhomogeneous that ceramic substrate and metal substrate have heat radiation, causes the local temperature height, can not finely heat must be dissipated, and influence result of use, lack useful life, therefore, its improvement and innovate imperative.
Three, summary of the invention
At above-mentioned situation, for overcoming the deficiency of prior art, the present invention's purpose just provides a kind of novel substrate for packaging LED, can effectively improve high-power encapsulation base heat dispersion, improvement reaches the problem that the life-span descends greatly because of temperature rise causes the led chip light decay, the technical scheme of its solution is, comprise the welding film, conducting film, chip attach layer and graphite substrate, welding film bottom is a conducting film, the basilar memebrane that is connected as a single entity is arranged at the bottom of conducting film, basilar memebrane places on the insulating oxide, and the insulating oxide bottom places on the graphite substrate, the welding film, conducting film, the middle part of basilar memebrane is with constituting groove on the insulating oxide between aspect, be equipped with the chip attach layer on the inherent insulating oxide aspect of groove, novel structure of the present invention is simple, uniqueness, easy to use, good heat dissipation effect, long service life, and can strengthen the high temperature resistant impact property of LED product, and improve product reliability and stability, be improvement and innovation to existing LED base plate for packaging.
Four, description of drawings
Fig. 1 is a structural front view of the present invention.
Fig. 2 is user mode figure of the present invention.
Fig. 3 is another embodiment of the present invention user mode figure.
The user mode figure that Fig. 4 combines for many parts of the present invention
Five, embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated.
Shown in Fig. 1-4, the present invention includes welding film, conducting film, chip attach layer and graphite substrate, welding film 1 bottom is a conducting film 2, the basilar memebrane 3 that is connected as a single entity is arranged at the bottom of conducting film 2, basilar memebrane places on the insulating oxide 4, the insulating oxide bottom places on the graphite substrate 5, and the middle part of welding film 1, conducting film 2, basilar memebrane 3 is equipped with chip attach layer 6 with constituting groove 7 on the insulating oxide 4 between aspect on the groove 7 inherent insulating oxide aspects.
In order to guarantee result of use, heat radiation wing 8 is equipped with in said graphite substrate 5 bottoms; Said groove 7 is rectangular groove; Said welding film 1, conducting film 2, basilar memebrane 3, insulating oxide 4, graphite substrate 5 are square or circular; Welding film 1, conducting film 2, basilar memebrane 3 compound composition metal layer integrative-structures.
In Fig. 1-4, wherein:
Welding film 1: main welding electronic component.Generally, adopt the method for magnetron sputtering to deposit on the conducting film by conductivity and weldability good metal such as silver or gold;
Conducting film 2: mainly play the effect of conduction, carrying certain current density, and bigger welding film and the basilar memebrane of excessive expansion difference of coefficients.Generally being the method that adopts magnetron sputtering deposits to copper or nickel or nickel alloy on the basilar memebrane;
Basilar memebrane 3: mainly be to play with insulating barrier stronger adhesive force is arranged, and the whole metallization conductive layer of plating.Adopt the method for magnetron sputtering that chromium or titanium are deposited on the insulating oxide;
Insulating oxide 4: by special anodized to graphite, the structure sheaf with micropore of formation, this layer has electrical insulation properties.
Graphite substrate 5: the substrate that is the LED lead wire circuit;
Die bonding layer 6: being with on the insulating oxide of led chip attached to substrate, is glue or the eutectic coating with good thermal conductivity;
Groove 7: be used for placing chip through the chip attach layer;
Heat radiation wing 8: be used to help the graphite substrate heat radiation;
Transparent plastic packaging resin 9: be used for packaged chip, fix and protect the plastic packaging material of led chip 11 lead-in wires;
Contact conductor 10: being used to connect led chip 11 and welding film 1, is that chip electrode is extracted, normally gold thread or aluminum steel etc.
Basilar memebrane 3 adopts the method for magnetron sputtering crome metal and titanium that chromium or titanium are deposited on the insulating oxide, and the thickness of basilar memebrane 3 is in the 0.2-0.3 mu m range; Conducting film 2 adopts magnetron sputterings that metallic copper or nickel or nickel alloy are deposited on the basilar memebrane 3, and thickness is in the 2-3 mu m range; Welding film 1 adopts magnetron sputtering that conductivity such as silver or gold and weldability good metal are deposited on the conducting film 2, and thickness is in the 0.5-1 mu m range; Adopt the method for mask or photoetching to form circuitous pattern and adopt the method for magnetron sputtering to make circuitous pattern form metal layer 1-3 on the face of insulating oxide 4, high-power LED chip is mounted play the encapsulation of lead-in wire line on the metal layer.
In concrete enforcement, the present invention carries out insulating oxide to graphite substrate to handle, and generates to have the oxide layer of electrical insulation properties.On insulating oxide, form designed LED cabling circuitous pattern with mask or photoetching etc., method with magnetron sputtering, alternately deposition substrate film, conducting film and welding film, thereby on graphite substrate, form metallization circuit layer, and packaging LED chips in the above with conductivity and solderability.This substrate structurally, insulating barrier is seamless the combination with graphite cake, has reduced thermal resistance to greatest extent, improves thermal diffusivity, thermal conductivity 129W/ (mK) improves the stability of led chip.The gas permeability that also has graphite can be better heat and extraneous cross-ventilation, and has enough intensity and favorable mechanical processing characteristics.
Adopt the high-power LED illuminator spare of circuit base of the present invention directly to be bonded on the graphite insulating oxide owing to led chip, utilize such encapsulating structure not only to reduce the thermal resistance number, also reduce the thermal resistance of led chip, thereby highlighted its good heat dispersion.And large tracts of land, the encapsulation of multicore sheet thereon, heat is evenly distributed, improve radiating efficiency, thereby realize the high-power LED illumination application.
The LED base plate for packaging is characterized in that:
A: on graphite cake, do the insulating oxide processing and form insulating oxide, adopt the method formation LED encapsulation trace-diagram of mask or photoetching and the method for employing magnetron sputtering to make the cabling figure form the metallization conductive layer on the face of insulating oxide.Magnetron sputtering technique is meant: electronics quickens to fly under effect of electric field in the process of substrate and bumps with ar atmo, and ionization goes out a large amount of argon ions and electronics, and electronics flies to substrate.Argon ion quickens the bombardment target under effect of electric field, sputter a large amount of target atom, is neutral target atom (or molecule) and is deposited on film forming on the substrate.Secondary electron is subjected to the influence of Lip river, magnetic field logical sequence magnetic force in quickening to fly to the process of substrate, be bound near in the plasma zone of target surface, plasma density is very high in this zone, secondary electron is made circular motion around target surface under the effect in magnetic field, this electronic motion path is very long, in motion process constantly and the ar atmo ionization that bumps go out a large amount of argon ion bombardment targets, reduce gradually through the energy that repeatedly collides the back electronics, break away from the constraint of the magnetic line of force, away from target, finally be deposited on the substrate.The present invention just is based on this principle, with the reactive metal magnetron sputtering to the formed line pattern of the insulating oxide of graphite cake, make it form metallization conductive layer circuit pattern, this metallization conductive layer circuit pattern has excellent heat conduction, can the thermal energy conduction that led chip produces be dispelled the heat away in moment, guarantee the operate as normal of led chip.
B: metal layer by basilar memebrane, conducting film, the welding film is compound forms.Adopt the formed metal layer of magnetron sputtering metal, tightly can not satisfy the function of its electrically conducting, and guarantee the reliable connection power of metal layer and insulating oxide, therefore have good high-temperature stability because the method that the basilar memebrane in the metal layer adopts magnetron sputtering deposits to chromium or titanium on the insulating oxide, can be fit to pb-free solder technology fully.
C: the installed surface at graphite cake is provided with LED cabling figure, and adopts the method for magnetron sputtering to make circuitous pattern, forms metal layer circuit and led chip and is encapsulated on the metal layer circuit.
D: at the graphite substrate insulating oxide of handling through insulating oxide is to adopt the method for magnetron sputtering to make mask or photoetching form led chip encapsulated circuit figure and form the metal layer circuit, and led chip is encapsulated on the metallization circuit, adopts the method formation metal layer of magnetron sputtering to combine on the other hand with other devices or material.
E: on the insulating oxide of graphite substrate, adopt the method for mask or photoetching to form LED electrical connection circuit figure and adopt the method for magnetron sputtering to make circuitous pattern form the metallization conductive layer, encapsulate one or more pieces led chips on insulating oxide and the led chip electrode be connected with metal layer with peripheral circuit.
This scheme has been started the brand-new structure of LED device moulding, is specially adapted to the moulding of great power LED device, and the manufacturing of making the LED device of arranged.The characteristics of its maximum are: the thermal resistance of device is reduced to the limit, has reduced the steady liter of device, satisfied heat radiation requirement high-power, superpower LED illuminating device.
The present invention compared with prior art, the one, the circuit substrate that adopts graphite material to make has good Thermal conductance and thermal diffusivity and machining property and permeability are drawn materials conveniently, cheap environment is not had appoint What pollutes. The 2nd, circuit board and radiator unite two into one, and the centre does not have the mechanical connection gap, the integral heat sink effect Fruit is better than the radiator of the combinations such as the ceramic wafer of high thermal conductivity coefficient and copper aluminium material.
Claims (6)
1, a kind of novel substrate for packaging LED, comprise welding film, conducting film, chip attach layer and graphite substrate, it is characterized in that, welding film (1) bottom is conducting film (2), the basilar memebrane (3) that is connected as a single entity is arranged at the bottom of conducting film (2), basilar memebrane places on the insulating oxide (4), the insulating oxide bottom places on the graphite substrate (5), the same insulating oxide in middle part (4) of welding film (1), conducting film (2), basilar memebrane (3) is gone up between aspect and is constituted groove (7), is equipped with chip attach layer (6) on the inherent insulating oxide aspect of groove (7).
2, novel substrate for packaging LED according to claim 1 is characterized in that, heat radiation wing (8) is equipped with in said graphite substrate (5) bottom.
3, novel substrate for packaging LED according to claim 1 is characterized in that, said groove (7) is rectangular groove.
4, novel substrate for packaging LED according to claim 1 is characterized in that, said welding film (1), conducting film (2), basilar memebrane (3), insulating oxide (4), graphite substrate (5) are square or circular.
5, novel substrate for packaging LED according to claim 1 is characterized in that, said welding film (1), conducting film (2), the compound composition metal layer of basilar memebrane (3) integrative-structure.
6, novel substrate for packaging LED according to claim 1 is characterized in that, the thickness of said basilar memebrane (3) is 0.2-0.3 μ m, and conducting film (2) thickness is 2-3 μ m, and welding film (1) thickness is 0.5-1 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100653774A CN101593802A (en) | 2009-07-06 | 2009-07-06 | Novel substrate for packaging LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100653774A CN101593802A (en) | 2009-07-06 | 2009-07-06 | Novel substrate for packaging LED |
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| Publication Number | Publication Date |
|---|---|
| CN101593802A true CN101593802A (en) | 2009-12-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009100653774A Pending CN101593802A (en) | 2009-07-06 | 2009-07-06 | Novel substrate for packaging LED |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101777620A (en) * | 2009-12-31 | 2010-07-14 | 深圳市蓝科电子有限公司 | High-power LED lead frame using graphite material as substrate, and preparation method |
| CN102654280A (en) * | 2011-08-10 | 2012-09-05 | 东莞市盈通光电照明科技有限公司 | Heat sink for LED (light-emitting diode) lamp holder |
| CN105402610A (en) * | 2015-12-14 | 2016-03-16 | 江门市中亚光电有限公司 | Corrugated lamp |
-
2009
- 2009-07-06 CN CNA2009100653774A patent/CN101593802A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101777620A (en) * | 2009-12-31 | 2010-07-14 | 深圳市蓝科电子有限公司 | High-power LED lead frame using graphite material as substrate, and preparation method |
| CN102654280A (en) * | 2011-08-10 | 2012-09-05 | 东莞市盈通光电照明科技有限公司 | Heat sink for LED (light-emitting diode) lamp holder |
| CN105402610A (en) * | 2015-12-14 | 2016-03-16 | 江门市中亚光电有限公司 | Corrugated lamp |
| CN105402610B (en) * | 2015-12-14 | 2019-04-09 | 江门市中亚光电有限公司 | A kind of corrugated lamp |
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Open date: 20091202 |